Iec 61760 4 2015

Due to the hig er temp rature profi es of reflow solderin proces es u in tin-si ver co p r al oy or other le d-f re solder al oy with hig er meltin temp ratures than Sn-Pb eutectic solde

Sur ace mount ing t ec nology –

Part 4: Classificat ion, pack aging, label ing and handl ng of moist ure sensit ive

devices

Part ie 4: Classificat ion, embal age, ét iquetage et manipulat ion des disposit ifs

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Sur ace mount ing t echnology –

Part 4: Classificat ion, pack aging, label ing and handl ng of moist ure sensit ive

devices

Part ie 4: Classificat ion, embal age, ét iquetage et manipulat ion des disposit ifs

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FOREWORD 4

INTRODUCTION 6

1 Sco e 7

2 Normative ref eren es 7

3 Terms an def i ition 7

4 General information 9

4.1 Moisture sen itive devices 9

4.2 Moisture sen itivity level (MSL) 10 4.3 Relation to other environmental test method (h midity tests) 10 5 As es ment of moisture sen itivity 10 5.1 Identification of non moisture sen itive devices 10 5.2 Clas ification 10 6 Test proced re 1

6.1 General 1

6.1.1 Stru tural y simi ar comp nents 1

6.1.2 Verif i ation an val dation tests 1

6.1.3 Selection of a pl ca le so k con ition an temp rature profi e 12 6.2 Dryin 12 6 3 Moisture so k 1

2 6.4 Temp rature lo d 13 6.4.1 Clas ification temp rature profie 13 6.4.2 Clas ification temp rature profie for sp cial devices 14 6.5 Recovery 14 6.6 Final me s rements 14 6.6.1 Req irements 14 6.6.2 Vis al in p ction 15 6.6.3 Electrical me s rements 15 6.6.4 Non-destru tive in p ction (if req ired) 15 6.7 Clas ification 15 6.8 Inf ormation to b given in the relevant sp cif i ation 15 7 Req irements to p c agin an la el n 16 7.1 Pac agin proces 16 7.1.1 Dryin of MSDs an car ier materials b f ore b in se led in MBBs 16 7.1.2 Evac ation an se l n 17 7.2 Pac agin material for dry p c 17 7.2.1 Moisture b r ier b g (MBB) 17 7.2.2 Desic ant 17 7.2.3 Humidity in icator 19 7.3 Inf ormation to b given on la els 2

8 Han l n of moisture sen itive devices 21

8.1 Storage 21

8.1.1 Recommen ed storage con ition 21

8.1.2 Shelf lfe 21

8.1.3 Flo r lfe 21

8.2 ESD 2

8.3 Humidity in ication 2

8.3.1 Humidity in icator card (HIC) 2

8.3.2 Moisture in icatin desic ant 2

8.4 Unp c in an re-p c in 2

9 Dryin 2

9.1 Dryin o tion 2

9.2 Method 2

9.2.1 General con ideration for b kin 2

9.2.2 Bake ut times 2

9.2.3 ESD protection 2

9.2.4 Reu e of car iers 2

9.2.5 Soldera i ty l mitation 2

An ex A (informative) Moisture sen itivity of as embl es 2

An ex B (informative) Mas /gain los analy is 2

An ex C (inf ormative) Bakin of devices 2

C.1 Bakin time an con ition 2

C.2 Example of a b kin proces 2

An ex D (normative) Moisture sen itivity la els 3

D.1 Object 3

D.2 Gra hical s mb ls an la els 3

D.2.1 Graphical s mb l f or moisture-sen itivity 3

D.2.2 Moisture-sen itivity identification la el (MSID) 3

D.2.3 Moisture-sen itivity caution la el (MSCL) 31

Biblogra h 3

Fig re 1 – Clas ification temp rature prof ile 13 Fig re 2 – Examples of h midity in icator card 2

Fig re C.1 – Bakin proces 2

Fig re D.1 – Stan ardized gra hical s mb l for u e on eq ipment 3

Fig re D.2 – Alternative moisture sen itivity s mb l (also in market u e) 3

Fig re D.3 – MSID la els (examples) 31

Ta le 1 – Moisture sen itivity levels 1

Ta le 2 – Moisture so k con ition 12 Ta le 3 – Parameters of the clas ification temp rature profi e 14 Ta le 4 – Clas if i ation temp ratures T c 14 Ta le 5 – MBB material pro erties 17 Ta le 6 – Con ition for re-bake – Example for one typ of plastic en a s lated devices 2

Ta le 7 – Con ition for b kin prior to dry p c – Example for one typ of plastic en a s lated devices 2

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International Stan ard IEC 617 0-4 has b en pre ared by IEC tec nical commit e 91:

Electronic as embly tec nolog

The text of this standard is b sed on the f ol owin doc ments:

Ful inf ormation on the votin f or the a proval of this stan ard can b foun in the re ort on

votin in icated in the a ove ta le

This publ cation has b en draf ted in ac ordan e with the ISO/IEC Directives, Part 2

A l st of al p rts in the IEC 617 0, publ s ed u der the general title Sura e mo nt ing

The commit e has decided that the contents of this publ cation wi remain u c an ed u ti

the sta i ty date indicated on the IEC we site u der "htp:/we store.iec.c " in the data

related to the sp cif i publ cation At this date, the publ cation wi b

• reconfirmed,

• with rawn,

• re laced by a revised edition, or

IMPORTANT – The 'colour inside' logo on the cov r pa e of this publ c tion indic te

th t it contains colours whic are considere to be us f ul f or the cor e t

und rsta ding of its conte ts Us rs s ould theref ore print this doc me t using a

colour printer

Due to the hig er temp rature profi es of reflow solderin proces es u in tin-si ver co p r

al oy or other le d-f re solder al oy with hig er meltin temp ratures than Sn-Pb eutectic

solder, the sen itivity of comp nents again t solderin he t, when b in exp sed to moisture

b fore solderin , b comes an in re sin ly imp rtant f actor

The c r ently existin stan ard des ribin the moisture sen itivity clas ification of devices

are a pl ca le for plastic en a s lated semicon u tors an simi ar sol d state p c ages (e.g

IEC 6 7 9-2 ), but not for other typ s of comp nents

This p rt of IEC 617 0 also exten s the clas if i ation an p c agin method as des rib d in

J-STD-0 0 an J-STD-0 3 It is inten ed to b u ed f or s c typ of comp nents, where

J-STD-0 0 an J-STD-0 3 are not req ired or not a pro riate

SURFA CE MOUNTING TECHNOLOGY –

Part 4: Classification, packaging,

label ing and handl ng of moisture sensitive devices

This p rt of IEC 617 0 sp cifies the clas ification of moisture sen itive devices into moisture

sen itivity levels related to solderin he t, an provision for p c agin , la el n an

han l n

This p rt of IEC 617 0 exten s the clas ification an p c agin method to s c comp nents,

where c r ently existin stan ard are not req ired or not a pro riate For s c cases this

stan ard introd ces ad itional moisture sen itivity levels an an alternative method f or

p c agin

This stan ard a pl es to devices inten ed f or reflow solderin , lke s rf ace mou t devices,

in lu in sp cific throu h-hole devices (where the device s p l er has sp cifical y

doc mented s p ort for ref low solderin ), but not to

• semicon u tor devices,

• devices for flow (wave) solderin

NOT Ba k ro n of this sta d rd a d its relatio to c re tly e istin sta d rd , e.g IEC 6 7 9-2 or J-S

D-0 0 a d J-S D-0 3, are d s rib d in th INTR D CTION

The f ol owin doc ments, in whole or in p rt, are normatively ref eren ed in this doc ment an

are in isp n a le f or its a pl cation For dated ref eren es, only the edition cited a ples For

u dated ref eren es, the latest edition of the ref eren ed doc ment (in lu in an

amen ments) a pl es

IEC 6 0 8-1, Enviro me t al t esting – Part 1: Ge eral a d g id an e

IEC 6 7 9-2 , Semic ndu tor d evic s – Mec a ic l a d climat ic t est met hods – P art 2 :

Resista c of plastic e c psulated SMDs t o th c mbined efe t of moisture a d sold ering

h at

IEC 613 0-5-1, El ectrostat ics – P art 5-1: P rot ection ofelectro ic d evic s fom electrostatic

p e ome a – Ge eral re uireme ts

IEC 617 0-2, Sura e mo nt ing tec n lo y – Part 2: Tra sp rtation a d stora e c nd itions

of sura e mo nt ing d evices (SMD) – Ap l i at ion g id e

IPC/JEDEC J-STD-0 0D.1, Marc 2 0 , Moisture/Reflow Se sit ivity Clas ific tion for N o

n-h rmetic Sol id State Sura e Mou t De ic s

3 Terms and def initions

For the purp ses of this doc ment, the f ol owin terms an def i ition a ply

moisture s nsitive de ic

MSD

device, where d rin solderin the eva oration of a sorb d moisture is l kely to deteriorate its

electrical or mec anical p r orman e comp red to what is given in the relevant sp cification

Note 1 to e try: This n te a ple to th Fre c la g a e o ly

3.2

moisture s nsitivity le el

MSL

ratin in icatin a device’s s s e tibi ty to damage d e to a sorb d moisture when s bjected

to reflow solderin

Note 1 to e try: This n te a ple to th Fre c la g a e o ly

Note 1 to e try: Th ma ufa turer’s e p s re time als in lu e th ma imum time alowe at th distrib tor in

ord r to k e th b g o e to s lt u its c nte t into smaler s ipme ts

Note 2 to e try: This n te a ple to th Fre c la g a e o ly

3.5

f loor l fe

al owa le time f or a device or semi-inis ed as embly to b exp sed to normal ro m

en ironment h midity an temp rature after removal fom a moisture b r ier b g or storage

c amb r an b f ore a solder ref low proces

3.6

s elf l f e

recommen ation of time that prod cts can b stored in the original p c agin , d rin whic

the defined q al ty of the go d remain ac e ta le u der sp cif ied con ition of

tran p rtation, storage an han l n

c a g fom dry state to wet state is d te te

3.10

humidity indic tor c rd

HIC

card on whic a moisture sen itive c emical is printed s c that it c an es colour f om dry to

wet when the in icated relative h midity is ex e ded

Note 1 to e try: This n te a ple to th Fre c la g a e o ly

Note 1 to e try: This n te a ple to th Fre c la g a e o ly

4 General inf ormation

4.1 Moisture s nsitiv de ic s

Certain materials, plastic p lymers an f il ers are h gros o ic an can a sorb moisture

de en ent on time an the storage en ironment Absorb d moisture wi va orize d rin ra id

he tin in the solder reflow proces , generatin

• degradation of in er con ection

The p netration of moisture into the a sorbin material is general y cau ed throu h exp s re

to the ambient air Moisture a sorption or moisture p netratin into cavities can le d to

moisture con entration in the device whic are hig enou h to cau e crac ing an /or

delamination to the device d rin the solderin proces (e.g “p pcorn phenomenon” , whic

may ad ersely af fect rel a i ty

NOT “Po c rn p e ome o ”: intern l stre s c u e th p c a e to b lg a d th n cra k with a a dible “p p”

Moisture can also in uen e the b n in stren th of ad esives, se l n s, en a s lants,

plastic with galvanic co tin , etc

Moisture exp s re also can in u e the tran p rt of ionic contamination into the device,

there y in re sin the p tential for circ it fai ure d e to cor osion

Hen e it is neces ary to dry moisture-sen itive devices, to se l them in a moisture b r ier b g

an only to remove them immediately prior to solderin onto the PCB The p rmis ible time

f rom the o enin of the moisture b r ier b g u ti the f i al solderin proces that a device can

remain u protected in an en ironment with a level of h midity a proximatin to re l-world

con ition (e.g 3 °C/6 % RH) is a me s re of the sen itivity of the device to ambient

h midity This amou t of time is cal ed flo r l fe

4.2 Moisture s nsitivity le el (MSL)

The moisture sen itivity level (MSL) is determined at the clas ification temp rature, whic is

set a ove practical solderin temp ratures The actual solderin temp rature me s red at the

to s rf ace of the comp nent therefore s al b les than the clas ification temp rature

Pac agin , storage, flo r l fe an pre-tre tment of moisture sen itive devices b fore b in

s bjected to ref low solderin proces es are identified by the MSL (see Clau e 5 an Ta le 1)

The method for clas if i ation of devices into MSL is des rib d in Clau e 6

4.3 Relation to other e vironme tal te t methods (humidity te ts)

In h midity tests, e.g as in IEC 6 0 8-2-7 , devices are tested as they are (u mou ted) or in

mou ted con ition, e.g soldered to a test b ard These tests detect the influen e of ad orb d

or a sorb d moisture to the p rf orman e of the device, e.g electrical c aracteristic ,

cor osion eff ects, but can ot detect the influen e of a sorb d moisture to the sen itivity

again t he t stres es of the solderin proces es

The target of the test method des rib d in this stan ard is to test the resistan e of devices

again t the solderin he t in combination with the h midity lo d as precon itionin proces

Other eff ects of h midity, l ke detoriation of electrical c aracteristic or isolation pro erties,

are not covered by this stan ard an ne d to b tested se arately

5 A sses ment of moisture sensitivity

5.1 Id ntific tion of non moisture s nsitiv de ic s

Non moisture sen itive devices s al b identif ied by analy is of desig an materials of

devices de en in on whether they can a sorb h midity, or h midity can p netrate into

cavities If the materials a p rently do not a sorb h midity, the devices may b declared by

the man f acturer as non moisture sen itive

Su h non moisture sen itive devices s al b desig ated as level “N” There are no

requirements f or non moisture sen itive devices

5.2 Cla sif ic tion

The proced re to clas ify moisture sen itive devices into MSL is des rib d in Clau e 6 The

devices are clas ified at the a pro riate clas ification temp rature selected f rom Ta le 3 an

Ta le 4

The recommen ed proced re is to start testin at the lowest moisture sen itivity level, whic

the evaluation p c age is re sona ly exp cted to p s (b sed on k owled e of other simi ar

evaluation p c ages)

If s p l er an u er agre , comp nents can b clas if ied at temp ratures other than those in

Ta le 4

If the con ition in Ta le 1 an /or Ta le 2 are not s ita le for a sp cific prod ct, other

con ition can b a pled ac ordin to the agre ment b twe n u ers an s p l ers

Table 1 – Moisture s nsitivity le els

Th flo r lf e c n b lo g r if th e viro me tal c n itio s are le s s v re th n th refere c c n itio , or

s orter, if mores v re

Exte d d s elf lf e c n b a re d u o , b t n e s re alc latio of th amo nt of d sic a t

a

Th s m of k e in time at flo r a d stora e time s o ld n t e c e th ma imum stora e p rio a

s e ifie b th s p ler

b

Th re uire s elf lfe a d h midity in p c e c n itio s al b a s re b th amo nt of th d sic a t,

c lc late b th u e of WVTR (water v p ur tra smis io rate) of th a ple MB For th d s riptio of

6.1.1 Stru tural y simi ar compone ts

Clas if i ation may b p rf ormed for a group of stru tural y simi ar comp nents Information

a out stru tural simi arity s al b given in the relevant sp cification

6.1.2 Verif ic tion a d v l dation te ts

The relevant sp cification s al des rib the minimum n mb r of sp cimen to b tested The

minimum n mb r s ould b at le st 1 pieces

NOT A s mple of 1 pie e te te with a a c pta c n mb r z ro re re e ts a L t Tolera c Perc nt

Def ectiv (LTP ) of 2 % with a c n d n e le el (C.L.) of 9 % Se ISO 2 5 - f or f urth r inf ormatio

6.1.3 Sele tion of appl c ble soa conditions a d temperature profi e

The so k condition related to the MSL s al b selected f om Ta le 2, the a pl ca le

temp rature prof ile for clas ification (Fig re 1) f rom Ta le 3 an Ta le 4

So k c n itio s a c rdin to IP /JEDEC J-S D-0 0D.1 Altern tiv ly a c lerate e uiv le t s a

c n itio s fom Ta le 5- in J-S D-0 0D.1:2 0 ma b a ple in c s th a tiv tio e erg is c nfirme

b th ma uf acturer

c Th temp rature gra ie t of th d cre sin slo e s al n t e c e 6 K/s.

Fig re 1 – Cla sific tion temperature pro le

Time

T

c– 5 °C

Table 3 – Parameters of th cla sif ic tion temperature pro le

S lder proc s Pa kage thick e s

Cla sif ic tio temperature T

a

This c n itio ma b a ple f or d vic s with hig th rmal ma s, wh re p a p c a e temp rature d e

n t re c 2 5 °C wh n s ld re with a pro le ty ic l to s ld rin pro e s s u in SnAgCu alo s ld r, or

f or v ry temp rature s n itiv d vic s Th p a p c a e temp rature is me s re at th d vic s rf ac or

a y oth r p int s e if i d in th rele a t s e ific tio

6.4.2 Cla sif ic tion temperature prof ile f or spe ial de ic s

When the clas ification temp rature prof iles of Ta le 3 an Ta le 4 are not a pl ca le to a

device (e.g comp nents with hig thermal mas an /or thermal sen itivity), other profies may

b sp cif ied in the relevant sp cification ac ording to the agre ment b twe n u er an

s p l er For referen e se also IEC 6 0 8-2-5 :2 0 , Ta le 7

The sp cimen s al b stored u der the stan ard atmospheric con ition for me s rements

an test as given in IEC 6 0 8-1, (15 to 3 ) °C, (2 to 7 ) % RH f or the time given in the

relevant sp cification

6.6 Final me s reme ts

6.6.1 Re uireme ts

A comp nent is con idered to p s that level of moisture sen itivity if it p s es the

6.6.2 Vis al inspe tion

Vis al in p ction s al b p r ormed af ter the test Special atention s al b p id to external

crac s an swel n whic wi b lo ked for u der a mag ification of 4 ×

A device s al b con idered as fai ure if it ex ibits any of the fol owin :

a) external crac visible u in 4 × o tical micros o e;

b) internal crac or delamination that intersects internal con ection ;

c) internal crac or delamination exten in f rom an terminal to an other internal element

relevant for the f un tion of the device;

d) internal crac or delamination exten in more than 2/3 the distan e fom an internal

element relevant for the fu ction of the device to the outside of the p c age;

e) c an es in p c age b d f latnes cau ed by warp ge, swel n or bulgin in isible to the

naked eye;

f ) dimen ion out of sp cification

Hot temp rature warp ge may b sp cif ied f or multi-pin devices If p rts me t in hot con ition

co-planarity an stan of f dimen ion as sp cified at ro m temp rature, they s al b

con idered p s in

The relevant sp cif i ation may pres ribe ad itional in p ction criteria

If internal crac s are detected by non-destru tive in p ction in 6.6.4, they are con idered a

f ai ure or verified go d u in p l s ed cros section throu h the identified site

For p c ages k own to b sen itive to vertical crac s, it is recommen ed that p l s ed cros

section b u ed to con rm the nonexisten e of ne r vertical crac s within the mould

comp u d or en a s lant

6.6.3 Ele tric l me s reme ts

Electrical me s rements on al devices s al b p r ormed as req ired by the relevant

sp cification, e.g datas e t, detai sp cification , etc

6.6.4 Non-de tructiv in pe tion (if re uire )

If req ired by the relevant sp cification, non-destru tive in p ction (e.g x- ay computed

tomogra h , s an in acou tic micros o y, etc.) s al b p rf ormed

6.7 Cla sif ic tion

If one or more devices in the test sample f ai at f i al me s rements, the p c age s al b

con idered not to have p s ed the tested level

If a device do s not p s level 5, it is clas ified as extremely moisture sen itive an dry p c

wi not provide adeq ate protection If s c devices are s ip ed, the c stomer s al b

ad ised of its clas ification The s p l er s al also in lu e a warnin la el with the devices

in icatin that those either s al b soc et mou ted, or baked dry within a time given on the

la el b fore reflow solderin

6.8 Inf ormation to be giv n in the rele a t spe ific tion

The f ol owin detai s s al b sp cified in the relevant sp cif i ation:

a) MSL an clas ification temp rature profie;

b) reject criteria, in lu in non-destru tive in p ction criteria, in ad ition to those in 6.6.2

throu h 6.6.4;

c) an precon itionin req irements diff erent to those given in 6.2 an 6.3

7 Requireme ts to pac aging and la el ing

7.1.1 Dryin of MSDs a d c r ier materials bef ore being s ale in MBBs

7.1.1.1 Re uireme ts – Le els 2, C2 a d C3

Pac in of the MSDs into MBBs s al b car ied out u der en ironmental con ition b low

3 °C/6 % RH, within one we k af ter mouldin , burn-in, b kin or other he tin proces

MET is not sp cified

MBBs may b o ened for a s ort p riod of time, e.g les than 1 h, an re-closed provided, if

present, that the HIC in icates a h midity of les than 3 % RH an provided that the

desic ant is re laced with fes desic ant When the MBB is next o ened, as lon as the HIC

in icates b low 3 % RH, the d ration time of the previou MBB’s o enin may b

disregarded Th s, if the HIC in icates b low 3 % RH when MBB is o ened, the f lo r l fe is

not de en ent on the d ration time of MBBs o enin

7.1.1.2 Drying re uireme ts – Le els 2 , 3, 4 or 5

MSDs clas ified as levels 2 , 3, 4, or 5 s al b dried ac ordin to Clause 9 prior to b in

se led in MBBs The p riod b twe n dryin an se l n s al not ex e d the MET les the

time al owed f or distributors to o en the b g an re ac p rts If the s p ler’s actual MET is

more than the default 2 h, then the actual time s al b u ed If the distributor practice is to

re ac the MBBs with active desic ant, then this time do s not ne d to b s btracted f rom the

MET

He tin proces es s c as mouldin , burn-in or b king can b regarded as pre-dryin If the

MSDs are stored in the low h midity control ed con ition u ti p c agin into MBBs, MET

7.1.1.3 Drying re uireme ts – Car ier materials

The materials f om whic car iers s c as tray , tub s, re ls, etc are made can aff ect the

desic ant ca acity when placed in the MBB Theref ore, the ef fect of these materials s al b

comp n ated for by b kin or, if req ired, ad in ad itional desic ant in the MBB to en ure

the s elf lfe of the devices (se 8.1.2)

7.1.1.4 Drying re uireme ts – Other

Sup l ers may u e the dryin ef fect of normal in-l ne proces es s c as p st mould c re,

markin c re, an burn-in to red ce the b kin time An eq ivalen y evaluation is

recommen ed to en ure that hig -temp rature proces in maintain moisture mas gain to an

ac e ta le level The total mas gain for the device at the time it is se led in the MBB s al

not ex e d the moisture gain of that device startin dry an then b in exp sed to 3 °C an

6 % RH f or MET les the time f or distributors

7.1.1.5 Ex e s time betwe n ba ing a d pa king

If the al owa le time b twe n b kin an p c in is ex e ded, the devices s al b re-dried in

ac ordan e with 9.1

7.1.2 Ev c ation a d s al ng

Typ 1 p c agin f or MSL levels 2, C2 and C3 ne d not to b evac ated

For MBB only: The intimate p c agin , e.g re l, tray, tub may b evac ated an se led to

f i intimate p c agin , desic ant an HIC

Partial y or l g tly evac ate to red ce the volume The b g s ould not b completely

evac ated sin e this wi red ce the ef fectivenes of the desic ant

For b ter vis al c ec it could b prefer ed to have a stron er vac um, as lon as no

damage of devices oc urs Observe the prod ct to se if there is an air le kage, to tig t or

to lo se p c in

Dry gas p c agin (o tional)

Evac ate to 5 hPa an fi up the b g with dry pure nitrogen or dry air This proces s ould

b re e ted f i e times to ac ieve a 9 % pure atmosphere in the MBB

7.2 Pa k gin material f or dry pac

7.2.1 Moisture bar ier ba (MBB)

The moisture b r ier b g s al me t relevant national stan ard req irements for flexibi ty,

electrostatic dis harge (ESD) protection, mec anical stren th, an pu cture resistan e The

b g s al b he t se la le The water va our tran mis ion rate (WVTR) is me s red u in

relevant national stan ard governin water va our tran mis ion rate throu h plastic fi m an

s e tin u in a mod lated inf rared sen or

Ta le 5 s ows the recommen ed WVTR for MBB of Typ 1 an Typ 2 af ter f lex testin in

ac ordan e with relevant national stan ard governin f lex d ra i ty of flexible b r ier

materials

Table 5 – MBB material pro ertie

1 me h nic l Minimum two sid s s ale b g Ty ic l water v p ur tra smis io

Common desic ant material is active clay (b ntonite), si ca gel or molec lar sieve

The desic ant material s al comply with relevant national stan ard governin activated

desic ants u ed f or the static deh midif i ation of p c agin b g The desic ant s al b

d stles , non-cor osive, an a sorb nt to amou ts sp cified in the stan ard The desic ant

s al b p c aged in moisture p rme ble b g The amou t of desic ant u ed, p r moisture

b r ier b g, s al b b sed on the b g s rf ace are an WVTR in order to maintain an interior

relative h midity in the MBB of les than 3 % at 2 °C f or device clas ification C2 an C3,

an les than 10 % at 2 °C f or MSDs clas if ied f om levels 2 throu h to 5

NOT For c mp ris n b twe n v rio s d sic a t ty e , c rtain s e if i atio s a o te th ‘U IT’ a th b sic

u it of me s re of q a tity for d sic a t material A U IT of d sic a t is d f i e a th amo nt th t wi a s rb a

4,3

D

A

WVTRM

M is the desired s elf l f e in month ;

WVTR is the water va our tran mis ion rate in g/m

is the mas of water in grams, that 1 g of desic ant wi a sorb at 10 % RH an 2 °C

NOT 1 Th c n ta t f actor 3 ,4 pro id s for th c n ersio of mo th into d y

NOT 2 Ad itio al d sic a t ma b re uire if tra s, tu e , re ls, fo m e d c p , etc are pla e in th b g

with ut b kin in ord r to a s rb th moisture c ntain d in th s materials

The fol owin f ormula can b u ed for al levels when more detai s a out material con tants

2

12

121

D

10

4,3

mK

CC

KhhA

WVTRM

121

D

10

4,3

KhhA

WVTRM

7 %, se 8.1.1.

For h

2

it is recommen ed to u e the me n value b twe n the initial relative h midity an the

ac e ta le maximum relative h midity in ide the p c agin , se 7.1.1

Formula (4)

91

441

×

×

=

pp

PP

K

θθ

The HIC, if req ired, s al comply with relevant national stan ard governin c emical y

impreg ated h midity in icator card

For levels C2 an C3 the HIC s al have a sen itivity value of 3 % RH whic may b

in icated by colour dots with sen itivity values of 2 % RH, 3 % RH an 40 % RH

For levels 2 throu h to 5, as a minimum, the HIC s al have 3 colour dots with sen itivity

values of 5 % RH, 10 % RH an 6 % RH Examples of HIC are s own in Fig re 2

Humidity b low 3 % RH c n b c nfirme b c mp ris n of a c lo r (la e d r

Fig re 2 ) – E ample of h midity in ic tor c rd f or levels C2 an C3

IEC

Fig re 2b) – E ample of h midity in ic tor c rd f or levels 2 to 5

Fig re 2 – Ex mple of h midity indic tor c rds

7.2.3.2 Moisture in ic ting de ic a t

Moisture in icatin desic ant may b u ed as an alternative to HIC when agre d b twe n

u er an s p l er

A desic ant s c that it wi make a sig if i ant, p rce tible c an e in colour (h e), when a

certain relative h midity is ex e ded s al b u ed

Cur ently avai a le desic ants c an e f rom blue (dry) to pin (wet The detai method for

ju gment s al b sp cified in the detai sp cif i ation Se 8.3.2

7.3 Information to be giv n on labels

The fol owin information s al b given on la els on the p c agin

a) Moisture sen itivity level

If req ired, MSL s ould b given for MSL1 also There are no req irements f or non

moisture sen itive devices

By agre ment b twe n u er an s p l er, the initial alpha etical code C may b omited

8 Handl ng of moisture se sitive devices

8.1.1 Re omme de stora e con itions

Se IEC 617 0-2, with the fol owin

• L w relative h midity: 10 %

• Hig relative h midity: 7 %

• Hig a solute h midity: 2 g/m

3

The storage con ition can b con idered as saf e, if the combination of the sp cified l mits of

7 % RH an 4 °C wi not b ex e ded d rin storage for more than 10 events p r ye r,

ir esp ctive of the d ration p r event, an one of the sp cified l mits (7 % RH or 4 °C) is

not ex e ded f or lon er than 3 day p r ye r

The storage time as given by the man f acturer sp cification s al not b ex e ded It is,

however, recommen ed that the total storage time s ould not ex e d two ye rs (man facturer

an c stomer) but s ould b l mited to one ye r af ter receipt of the prod cts by the c stomer

In sp cific cases the exact storage time, an the req alfication rules, if the time is ex e ded,

are given in the comp nent sp cification

If lon er storage times are ne ded, the man facturer s ould b con ulted to con lu e s ita le

For “last cal ” comp nents the storage con ition to con erve the comp nent’s pro erties

s al b agre d b twe n the man f acturer an the u er

8.1.2 Sh lf l fe

The calc lated s elf lf e f or dry p c ed MSDs s al b a minimum of 12 month fom the b g

se l date, when stored in a non-con en in atmospheric en ironment of ≤ 0 °C, ≤ 5 % RH

NOT Th minimum c lc late s elf lf e is 12 mo th fom b g s al d te If th a tu l time o s elf h s

e c e e 12 mo th a d th h midity in ic tor c rd in ic te th t b kin is n t re uire , th n it is s f e to reflow

th d vic s p r th origin l MSL ratin Howe er, u a ticip te fa tors oth r th n moisture s n itivity c uld af fe t

th total s elf lf e of d vic s, e.g d terioratio of s ld ra i ty b o idiz tio

8.2 ESD

The related low h midity of the b kin en ironment req ires that ESD precaution s ould b

o served in the han l n of p c ages If devices are removed f rom tub s, tray or ta e an

re l, stan ard ESD han l n proced res s al b u ed d rin an af ter removal

NOT Furth r inf ormatio o h n ln of ele tro tatic s n itiv d vic s, s e IEC 613 0-5- for g id n e

8.3 Humidity indic tion

8.3.1 Humidity indic tor c rd (HIC)

Ex es ive h midity in the dry p c is in icated by the h midity in icator card (HIC) It can

oc ur d e to mis an l n , misproces in or impro er storage HIC is reversible

HIC s ould b re d within one min te up n removal f rom the MBB For b st ac urac , HIC

If the 5 % RH sp t in icates wet an the 10 % RH sp t do s not in icate dry, an the 6 %

sp t in icates dry, the levels 2 , 3, 4 an 5 p rts have b en exp sed to an ex es ive level of

moisture, an dryin s al b done as in icated in 9.1 However, level 2 p rts are sti

adeq ately dry

For MSDs of levels C2 an C3, if the HIC in icates that there is a p s ibi ty of h midity

in ide MBB ex e din 3 % RH, the MSDs have b en exp sed to an ex es ive level of

moisture, an s al b dried in ac ordan e with 9.1

8.3.1.4 HIC indic tion 3

If the 5 %, 10 %, an 6 % RH sp ts in icate wet, level 2 p rts an hig er have b en

exp sed to an ex es ive level of moisture, an s al b dried ac ordin to 9.1

HICs s al not b reu ed where the 6 % sp t in icates wet

8.3.2 Moisture in ic ting de ic a t

The desic ant colour can b re d af ter a lon er time p riod than HIC after removal f rom the

MBB, but nevertheles within ten min tes The detai method f or ju gment s al b sp cif ied

in the detai sp cification

8.4 Unpa king a d re-pa king

If it is neces ary to o en the b g, c t simply acros the to of the b g as close to the original

se l as p s ible, b in careful not to damage its contents By c tin close to the se l, the

maximum amou t of b g len th is preserved for rese l n

Moisture sen itive devices may b rese led in their original b g with the original desic ant

an h midity in icator card or moisture in icatin desic ant, provided that they have not b en

exp sed to con ition a ove 3 °C an 6 % relative h midity for an ac umulated time of

more than 3 min Note the d ration how lon the b g was u se led on the b g

When the h midity in icator card is no lon er s ita le for u e, the moisture sen itive devices

s al b re-dried and p c ed newly ac ordin to 7.1

9.1 Drying o tions

Unles otherwise sp cified in the prod ct sp cif i ation the examples of comp nent dryin

o tion given in Ta le 6 (re-b ke) an Ta le 7 (b kin prior to dry p c ) for variou moisture

sen itivity levels an ambient h midity exp s res of ≤ 0 % RH s ould b a pled Con ition

f or re-b ke an con ition f or b kin prior to dry p c s al b in ac ordan e with the prod ct

sp cification

Dryin u in an al owa le o tion resets the flo r l fe cloc If dried an se led in an MBB with

f res desic ant, the s elf l fe is reset

Table 6 – Conditions f or re-ba e –

Ex mple f or one type of pla tic e c ps late de ic s

NOT 1 This ta le is b s d o worst-c s mo ld d le d f rame SMDs Us rs ma re u e th a tu l b kin time,

if te h ic ly ju tifie (e.g a s rptio /d s rptio d ta, etc.) In mo t c s s, it is a plc ble to oth r n n-h rmetic

SMDs

NOT 2 C2 a d C3 d n t n e b kin , wh n 3 % RH is n t e c e e

Ta le 7 gives con ition f or b kin prior to dry p c at a s p l er an /or distributor an al ows

f or a maximum total of 2 h MET

Table 7 – Condition for ba ing prior to dry pa k –

Ex mple f or one type of pla tic e c ps late de ic s

NOT Th b kin time s e if i d are b s d o worst c s c n itio s a d are c n itio s for a s p ler a d/or

distrib tor Oxid tio ma o c r Su plers ma re u e th a tu l b kin time if te h ic ly ju tif i d (e.g

a s rptio /d s rptio d ta, etc.)

The s p l er s al formal y commu icate to the distributor the maximum time that the prod ct

may b lef t u se led (at the distributor) b fore re-b kin is required

9.2 Methods

9.2.1 Ge eral considerations f or ba in

9.2.1.1 High- emperature c r iers

Unles otherwise in icated by the man facturer, MSDs s ip ed in hig -temp rature car iers

(e.g hig -temp rature tray ) can b b ked in the car iers at 12 °C

9.2.1.2 Low- emperature c r iers

Devices s ip ed in low-temp rature car iers (e.g tub s, low-temp rature tray , ta e an re l)

may not b b ked in the car iers at an temp rature hig er than 4 °C If a hig er b kin

temp rature is req ired, devices s al b removed fom the low-temp rature car iers to

thermal y saf e car iers, b ked, an returned to the low-temp rature car iers

NOT Ma u l h n ln ma in re s th ris of me h nic l a d/or E D d ma e

9.2.1.3 Paper a d pla tic contain r items

Pa er an plastic container items s c as cardb ard b xes, bub le p c , plastic wra , etc

s al b removed f om arou d the car iers prior to b kin Rub er b n s arou d tub s an

plastic tray ties s al also b removed prior to hig temp rature b kin , e.g at 12 °C

9.2.2 Ba eout time

Bake ut times start when al devices re c the sp cified temp rature

9.2.3 ESD prote tion

Pro er ESD han l n precaution s ould b o served, in ac ordan e with relevant national

stan ard for ESD-sen itive items This is p rtic larly critical if MSDs are man al y han led

by vac um p n is u der low-humidity con ition , e.g in a dry en ironment, af ter b kin , etc

Se IEC 613 0-5-1 for g idan e

9.2.4 Re s of c r iers

The a pro riate material sp cification s ould b con ulted b fore reu in car iers

9.2.5 Solderabi ty l mitations

9.2.5.1 Oxidation ris

Bakin MSDs can cau e oxidation an /or intermetal c growth of the termination , whic , if

ex es ive, can res lt in soldera i ty pro lems d rin b ard as embly The temp rature an

time for b kin MSDs are theref ore l mited by soldera i ty con ideration Unles otherwise

in icated by the s p l er, the c mulative b kin time at a temp rature gre ter than 9 °C an

up to 12 °C s al not ex e d 9 h If the b kin temp rature is not gre ter than 9 °C, there

is no lmit on b kin time Bakin temp ratures hig er than 12 °C are not p rmis ible without

con ultin the s p ler

9.2.5.2 Car ier out g s ing ris

Care s ould b taken to en ure that out-gas in of materials f rom the comp nent car iers

do s not oc ur to an sig ificant extent, s c that soldera i ty mig t b af fected

Annex B

(inf or mative)

Mass/gain loss analysis

The f ol owin ste s are ne ded to evaluate the a sorption an /or desorption

– Me s re the mas of the samples – Re e t this ste 5 times

– Bake these samples u in a temp rature storage c amb r at 12 °C f or 4 h

– Me s re an record the dry mas of these samples Re e t this ste 5 times

– L ad these samples into a temp rature an h midity c amb r with the f olowin

p rameters set: (8 ± 2)°C, (8 ± 5)% RH

– Me s re an record the mas of the samples af ter every 2 h ti the samples have b en

f ul y saturated, e.g 19 h

– Tran fer these samples into an oven an he t them at 12 °C

– Me s re an record the mas of the examples every 2 h for a p riod of 10 h, at the

2th

hour an at the 4

th

hour

Annex D

(nor mative)

Moisture sensitivity labels

D.1 Object

The purp se of this an ex is to provide a distin tive s mb l an la els to b u ed to identify

those devices that req ire sp cial p c in an han ln precaution

D.2 Gra hic l symbols and la els

D.2.1 Graphic l s mbol f or moisture-s nsitivity

Gra hical s mb l IEC 6 417-6 9 :2 1 -10, Moist ure se sit iv d evic s in Fig re D.1 an the

s mb l in Fig re D.2 in icate that devices are moisture sen itive, an it a p ars on al

moisture sen itive caution la els (MSCL)

Figure D.1 – Sta d rdize graphic l s mbol f or us on e uipme t

Fig re D.2 – Alternativ moisture s nsitivity s mbol (also in mark t us )

D.2.2 Moisture-s nsitivity ide tif ic tion label (MSID)

This la el s ould b on the smal est level s ip in container to in icate that moistu

re-sen itive devices are in the container This la el is recommen ed to b a minimum of 2 mm

in diameter Se Fig re D.3

IEC

Figure D.3 – MSID labels (e ample )

D.2.3 Moisture-s nsitivity c ution label (MSCL)

D.2.3.1 Conte t of label

This la el is req ired on the moisture b r ier b g an wi provide the fol owin information:

• moisture clas ification level;

• calc lated s elf l fe in the se led b g;

• p ak MSD b d to s rf ace temp rature u ed f or device clas ification;

• flo r lf e of the device at 3 °C an 6 % RH;

• b g se l date uti zin “MMDDYY”, “YYWW” or eq ivalent format

An ac e ta le alternative wi b to provide the a ove information on the adjacent b r code

la el

D.2.3.2 Label size

L b ls are recommen ed to b a minimum of 7 mm by 7 mm s uare

D.2.3.3 Label colours

The MSID an caution la els s al b in contrastin colours These la els s al be legible to

normal vision at a distan e of 1 m Monoc romatic re rod ction in any colour that contrasts

with the b c grou d may b u ed Where the c oice of colour is arbitrary, it is s g ested that

– the MSID la el b c grou d b blue (Pantone # 9 C) with a blac s mb l an let ers,

– the caution la el b c grou d b white with a blue (Proces blue) s mbol an let ers

Wherever p s ible, the colour red s ould b avoided as red s g ests a p rsonal hazard

IEC

Bibl ogr aphy

IEC 6 0 8-2-5 :2 0 , Enviro me tal test in – Part 2-58: Tests – Test Td: Test meth ds for

sold era il ity, resistan e t o d is ol ution of met al lizatio a d to sol d erin h at of sura e

mo nt ing devic s (SMD)

IEC 6 0 8-2-7 , En iro me tal testing – P art 2-78: Tests – Test Ca : Damp h at, steady

state

IEC 6 417, Gra hic l symb ls for use o e uipme t

IEC 6 7 9-2 -1, Semic nd uctor d evic s – Mec a ic l a d c matic test methods – Part 2 -1:

H andling, p ck ing, l ab l l ing a d shipping ofsura e-mo nt d evic s se sitive to th c mbin d

efe t of moisture a d sol dering h at

ISO 6 , Plast ics – Determin tion of water a sorption

ISO 2 5 -1, Sampl ing pro ed ures for insp ction b atributes – Part 1: Sampling sc emes

ind ex ed b a c pt an e q al ity limit (AQL) for lot -b -lot insp ct ion

ASTM D 5 0, Sta dard Test Method for Water Absorption of Plast ics

J-STD-0 3C, H and lin , P ackagin , Ship in a d Use of Moisture/Refl ow Se sit iv Sura e

Mo nt De ic s

JEDEC JESD2 -A12 , ( escind ed ) Test Method for the Measureme t of Moisture Diffusivity

a d Water Solubility in Org nic Mat erials U sed in I ntegrated Circ its

JEDEC JEP1 3, Symb l a d L b ls for Moisture se sit iv d evic s

IPC-T-5 G (FED/IPC/2 0 ), Terms a d Definitions for I nt erc n e tin a d P ack aging

Ele tro ic Circ its

MIL-PRF-131 , P erorma c Sp cific t ion – Barier Materials, Water vap r pro f, Gre se

pro f, F le ible, He t-Se labl e

MIL-PRF-2 4 1E (2 0 ), Perorma c Sp cific tion P ro ellant pres urizing a e t , N itro e

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