Iec Tr 63017-2015.Pdf

IEC TR 6301 7 Edition 1 0 201 5 1 2 TECHNICAL REPORT Flexible printed circuit boards (FPCBs) – Method of compensation of impedance variations IE C T R 6 3 0 1 7 2 0 1 5 1 2 (e n ) ® colour inside Inte[.]

IEC TR 6301 7

Editio 1.0 2 15-12

TECHNICA L

Flexible print ed circuit boards (FPCBs) – Met hod of compensat ion of impedance

variat ions

®

c olour

inside

IEC TR 6301 7

Edit io 1.0 2 15-12

TECHNICA L

Flex ible print ed circuit boards (FPCBs) – Met hod of compensat ion of impedance

variat ions

INT ERNAT IONAL

ELECT ROT ECHNICAL

COMMIS ION

-®

W arnin ! Mak e s re t hat y ou o t ain d t his publ c tion from a a thorize distribut or

c olour

inside

FOREWORD 3

1 Sco e 5

2 Normative ref eren es 5

3 Ap aratu 5

3.1 Time domain ref lectometry 5

3.2 Bloc diagram f or imp dan e me s rin 5

4 Test sp cimen 6

4.1 General 6

4.2 Stru ture 6

4.3 Test method 7

4.4 Calc lation 8

5 Re ort 9

An ex A (normative) Bloc diagram f or imp dan e me s rin with TDR 10 An ex B (informative) The retical b c grou d 1

An ex C (inf ormative) Example of an imp dan e me s rement with TDR 12 An ex D (inf ormative) Han contact ef fect 13 An ex E (informative) Test res lt 14 E.1 Shield 1 FPCB 14 E 2 Shield 2 FPCB 1

5 Biblogra h 16 Fig re 1 – TDR test s stem 5

Fig re 2 – Two typ s of imp dan e stru ture of FPCB 6

Fig re 3 – Sc ematic diagram of a test sp cimen 7

Fig re 4 – Imp dan e value of two typ FPCB (b re an s ield) 8

Fig re 5 – Comp n ation value (∆L) of the Cu l ne width f or the s ield FPCB 9

Fig re A.1 – TDR test s stem ac ordin to IPC 2141a-9-1 10 Fig re A.2 – TDR test s stem ac ordin to Agi ent TDR 5 7 4A 10 Fig re B.1 – Two typ s of imp dan e stru ture of FPCBs 1

Fig re B.2 – Comp rison of the imp dan e value of a b re FPCB vers s a s ield FPCB 1

Fig re C.1 – Photogra hic view of the imp dan e me s rement with TDR 12

Fig re D.1 – Ef fect of imp dan e variation by han contact f or b re FPCB 13

Fig re E.1 – Me s rement res lt of the test sp cimen for s ield 1 FPCB 14

Fig re E.2 – Me s rement res lt of the test sp cimen for s ield 2 FPCB 15

Ta le E.1 – Cros -section of test sp cimen with u in s ield 1 FPCB 14

Ta le E.2 – Cros -section of test sp cimen with u in s ield 2 FPCB 15

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IEC TR 6 017, whic is a tec nical re ort, has b en pre ared by IEC tec nical commit e 91:

Electronic as embly tec nolog

The text of this tec nical re ort is b sed on the fol owin doc ments:

Ful information on the votin f or the a proval of this tec nical re ort can b f ou d in the

re ort on votin in icated in the a ove ta le

This publ cation has b en drafted in ac ordan e with the ISO/IEC Directives, Part 2

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related to the sp cif i publ cation At this date, the publ cation wi b

• reconfirmed,

• with rawn,

• re laced by a revised edition, or

A bi n ual version of this publcation may b is ued at a later date

IMPORTANT – The 'colour inside' logo on the cov r pa e of this publ c tion in ic te

that it contains colours whic are considere to be us ful f or the cor e t

understa din of its conte ts Us rs s ould th ref ore print this doc me t using a

colour printer

FLEXIBLE PRINTED CIRCUIT BOA RDS (FPCBs) –

This Tec nical Re ort sp cifies a comp n ation method of Cu l newidth ac ordin to

imp adan e red ction by u in noise s p res ion materials (here fter refer ed to as NSMs)

f or FPCBs

This Tec nical Re ort presents an o timum res lt for maintainin a desig ated p rorman e

of FPCBs by u in NSMs It also in icates a me s rin method for an imp dan e variation of

FPCBs u in NSMs with the prevai n TDR ( ime domain reflectometry) method This method

is resticted to me s rin only the variation of an imp dan e value in ac ordan e with the

variation of the Cu l newidth by u in NSMs f or FPCBs This re ort, however, neither

determines nor in icates the stru ture or material of FPCBs

The f ol owin doc ments, in whole or in p rt, are normatively ref eren ed in this doc ment an

are in isp n a le f or its a pl cation For dated ref eren es, only the edition cited a ples For

u dated referen es, the latest edition of the referen ed doc ment (in lu in an

amen ments) a pl es

IPC 2141A Design Guid e for H igh-Sp ed Co trolled Imp d an e Circ its Bo rds

htp:/ www.ipc.org/

3.1 Time domain ref le tometry

Time domain ref lectometry (here f ter refer ed to as TDR) is uti zed to identify the imp dan e

data at the sp cific f req en y ran e of FPCBs

3.2 Bloc dia ram f or impe a c me s rin

Fig re 1 gives one example of a TDR setup

Fig re 1 – TDR te t s stem

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NOT A g id ln f or TDR is pro id d in An e A.

4 Test specime

FPCBs u in NSMs s ould red ce the ef fect of electro-mag etic inter eren e However,

without a pro riate a pl cation of NSMs, it may cau e p or sig al q al ty on the FPCB d e to

the imp dan e variation of Cu circ it lnes

A major f actor of imp dan e variation u in NSMs is d e to the stru ture variation of FPCBs,

as s own in Fig re 2

Fig re 2 – <Micro strip lne structure with ut

NSMs

Fig re 2b – <Strip lne structure with NSMs

NOT A g id ln for th th oretic l b c gro n of imp d n e v riatio is pro id d in An e B

Fig re 2 – Two type of impe a c structure of FPCB

4.2 Structure

Test sp cimen s al b desig ed by two stru tures, i.e with an without u in NSMs in one

FPCB b ard Test sp cimen s al b divided into two halves with one b ard (con istin of

the two p rts of one b re FPCB an one s ield FPCB) for eq ita le estimation This stru ture

has the merit of u iformly me s rin at on e a b re an a s ield FPCB u der the same

con ition One FPCB without u in NSMs has a stru ture of a micro-strip l ne This typ is

cal ed b re FPCB Another FPCB u in NSMs has a stru ture of a strip l ne This typ is

cal ed s ield FPCB (se Fig re 3)

A Cu l ne is f ormed with a l ne r distan e direction, b cau e the variation of the s ield eff ect

is very we k for a c rved l ne

General y, the n mb r of Cu p t ern of the test sp cimen can b over the 5 (for example

LW1 ~ LW5) f or verification of the c aracteristic imp dan e (Z

0 ) But the n mb r an width of

the Cu l ne s al vary in ac ordan e with the s p l er’s activity

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Bare FP B

Co er la er PI

PI

Ad e iv

S(Cu)

GN (Cu)

G(Cu) G(Cu)

Via h le

IE C

Shield FP B

Co er la er PI

PI

Ad e iv

S(Cu)

GND (Cu)

G(Cu)

G(Cu)

NSMs

Fig re 3 – Sc ematic dia ram of a te t spe ime

Size, sp cin an n mb r of via holes for test sp cimen s al not be l mited, but s ff i iently

re resented Esp cial y, via holes of fer an imp rtant role to contact the NSMs with the grou d

plan of s ield FPCB The n mb r of via holes s al b as agre d b twe n u er an s p l er

(here fter refer ed to as AABUS)

The len th of the test sp cimen s al b over 5 cm in order to o tain sta le values f rom the

me s rin eq ipment Eac en of the test sp cimen s ould con ist of SMA (s bminiature A)

con ectors For dis ernment of a Cu l ne-width, write e c − n mb r to the b re − en of the

test sp cimen ne r the SMA con ector

The decision of width an thic nes of a test sp cimen s al de en on to the pitc or the

n mb r of the Cu lne or ac ordin to the req irements of the u er However, general y the

stru ture of the test coup n s al b AABUS

An imp dan e value for FPCBs s al b c an ed with resp ct to the Cu p tern width, layer

stru ture, thic nes an materials The stru ture an materials of the test sp cimen is

req ired de en in on the u er’s sample sp cif i ation But the variation of these test

sp cimen is not imp rtant, b cau e the u er of FPCBs s al c ec only the imp dan e

variation eff ect by u in NSMs for the u er’s sample sp cification

4.3 Te t method

In order to me s re the pro er imp dan e value f or the test sp cimen, the fol owin

IE C

Bare FP B LW1

LW2

LW3

LWn

LW1

LW2

LW3

LWn

●

●

●

●

●

●

●

●

●

●

●

●

Shield FP B

●

●

●

●

●

●

●

●

●

●

●

●

> 5㎝

Via h le

a) Imp dan e values of the test sp cimen s al b me s red by employin TDR, test

sp cimen an co xial ca le ac ordin to IPC 2141A

b) Me s rement con ition s al b set by me n of the TDR, s c as dielectric con tant,

me s rement p int, risin time, pulse width, etc

c) The imp dan e value of the test sp cimen s al b me s red ac ordin to the Cu l ne

width for b re FPCB

d) The me s rement of the a ove proces ac ordin to Cu l ne width s al b re e ted for

the s ield FPCB (se Fig re 4)

NOT Th g id ln of th te t meth d is pro id d in An e C

e) The me s rin value of the two typ s FPCBs (b re an s ield) s al b presented in form

of a diagram (lne c art u in ex el)

IE C

Figure 4 – Impe a c v lue of two type FPCB (bare a d s ield)

f ) In order to o tain the cor ect data, a direct han contact to the sp cimen s ould b

avoided as the electrostatic ca acity varies

NOT Th eff ect of h n c nta t with th te t s e ime is pro id d in An e D

4.4 Calc lation

The fol owin a pl es to the calc lation of the comp n ation values

a) General y, a deman of the c aracteristic imp dan e value (Z

0 ) is 5 Ω f or a sin le Cu

l ne, 10 Ω for a dif ferential Cu l ne

b) In the case of a sin le Cu l ne, draw a straig t b se l ne cor esp n in to a c aracteristic

imp dan e value (5 Ω) on a ex el c art (se Fig re 5)

c) Fin a cros p int of the Cu l ne width for a c aracteristic impedan e value (5 Ω) with

e c c rve of b re an s ield FPCB

d) Esp cial y, c ec the Cu lne width in the p int to me t the 5 Ω imp dan e value f rom

the s ield FPCB c rve

e) Calc late a dif feren e (∆ ) of the Cu l ne width b twe n two p ints

f ) Red ce ∆L by degre s to the Cu l ne width of the b re FPCB

g) Show this value in a new desig of a Cu l ne width f or the b re FPCB

NOT A d taie te t re ult is pro id d inAn e E

0

10 2 3 4 5 6 7

Lin widt h (µm)

Bare

Shield

Figure 5 – Compe s tion v lue (∆L) of the Cu l ne width f or the s ield FPCB

In case that the sp cification of the me s rement is contained in the re ort, it s al b

provided with the detai s as sp cified b low

a) Typ of TDR eq ipment

b) Typ of s ied materials (stru ture, thic nes , maker)

c) Typ of b se materials (stru ture, maker)

d) The ran e of Cu l ne width

e) The ran e of imp dan e (Z) variation ac ordin to the Cu lne width of the test sp cimen

f ) Imp dan e value data ac ordin to the Cu lne width

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5

∆L

Lin width (µm)

Bare

Shield

Annex A

(nor mative)

Block diagram f or impedance measuring with TDR

Time Domain Ref lectometry (TDR) s al b u ed f or imp dan e me s rements ac ordin to

IPC 2141A

The TDR setup (IPC 2141A) is presented in Fig re A.1

Figure A.1 – TDR te t s stem a cording to IPC 2141a-9-1

Test setup by Agi ent TDR 5 7 4A

1

is presented in Fig re A.2

Figure A.2 – TDR te t s stem a cordin to Agi e t TDR 5 7 4A

1

Agie t TDR 5 7 4A is th tra e n me of a pro u t s p le b Agie t Te h olo ie

This inf ormatio is giv n for th c n e ie c of u ers of this d c me t a d d e n t c n titute a e d rs me t

b IEC of th pro u t n me Eq iv le t pro u ts ma b u e if th y c n b s own to le d to th s me re ults

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