Iec 62007 1 2015

12 5.4 Limitin values a solute maximum ratin s over the o eratin temp rature ran e, u les otherwise stated.. 16 6.4 Limitin values a solute maximum ratin s over the o eratin temp rature

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Semiconduct or opt oelect ronic devices for fibre opt ic sy st em appl cations –

Part 1: Specification t emplat e for essent ial rat ings and charact eristics

sy stèmes à fibres optiques –

Partie 1: Modèle de spécificat ion relatif aux v aleurs et caractérist iques

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Semiconduct or optoelect ronic dev ices for fibre opt ic sy stem appl cations –

Part 1: Specification t emplat e for essent ial rat ings and charact eristics

sy st èmes à fibres opt iques –

Partie 1: Modèle de spécificat ion relatif aux v aleurs et caract éristiques

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A tt ention! Veui ez vou a s rer qu vou avez o te u c t te publc tion v ia u distribute r a ré

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CONTENTS

FOREWORD 5

1 Sco e 7

2 Normative ref eren es 7

3 Terms, def i ition an a breviation 7

3.1 Terms an def i ition 7

3.2 Ab reviation 9

4 LEDs for f ibre o tic s stems or s bs stems 9

4.1 Typ 9

4.2 Semicon u tor materials 9

4.3 Detai s of outl ne an en a s lation 9

4.4 Limitin values (a solute maximum ratin s) over the o eratin temp rature

ran e, u les otherwise stated 10

4.5 Electrical an o tical c aracteristic 10

4.6 Sup lementary inf ormation 11

5 L ser mod le with pigtai s 12

5.1 Typ 12

5.2 Semicon u tor 12

5.2.1 Materials 12

5.2.2 Stru ture 12

5.4.1 General con ition 13

5.4.2 L ser diode 13

5.4.3 Photodiode 13

5.4.4 Thermal sen or (where a pro riate) 13

5.4.5 Thermo lectric co ler (where a pro riate) 14

5.5 Electric an o tical c aracteristic 14

5.7 Hazard 16

6 PIN photodiodes for f ibre o tic s stems or s bs stems 16

6.1 Typ 16

7 Avalan he photodiodes (APDs) with or without pigtai s 19

7.1 Typ 19

7.2 Semicon u tor 19

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8.1 Typ 21

8.3 Stru ture 21

8.5 Limitin values (a solute maximum ratin s) over the o eratin temp rature ran e, u les otherwise stated 2

8.6 Op ratin con ition at T amb = 2 °C, u les otherwise stated 2

8.8 Sup lementary inf ormation 23 9 APD-TIA mod les for f ibre o tic s stems or s bs stems 2

9.1 Typ 2

9.3 Stru ture 2

10 L ser diode mod les for pumpin an o tical f ibre ampl fier 2

10.1 Typ 2

10.3 Stru ture 2

10.7 Sup lementary inf ormation 29 10.8 Hazard 2

1 Optical mod lators for digital f ibre o tic a pl cation 2

1 1 Typ 2

1 2 Materials 2

1 3 Stru ture 2

1 4 Detai s of outl ne an en a s lation 3

1 5 Limitin values (a solute maximum ratin s) 3

1 6 Electrical an o tical c aracteristic 31

1 7 Sup lementary inf ormation 32 1 8 Hazard 3

Bibl ogra h 3

Ta le 1 – Limitin values for LEDs 10 Ta le 2 – Electrical an o tical c aracteristic for LEDs 1

Ta le 3 – Electric an o tical c aracteristic for laser mod les with pigtai s 14 Ta le 4 – Limitin values for PIN photodiodes 17 Ta le 5 – Electrical an o tical c aracteristic for PIN photodiodes 18 Ta le 6 – Electrical an o tical c aracteristic for avalan he photodiodes (APDs) with or without pigtais 2

Ta le 7 – Limitin values for PIN-TIA mod les 2

Ta le 8 – Op ratin con ition f or PIN-TIA mod les 2

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Ta le 10 – Limitin values for APD-TIA mod les 2

Ta le 1 – Electrical an o tical c aracteristic f or APD-TIA mod les 2

Ta le 12 – Limitin values for laser diode mod les for pumpin an o tical f ibre

ampl fier 2

Ta le 13 – Electrical an o tical c aracteristic f or laser diode mod les for pumpin

an o tical f ibre ampl f ier 2

Ta le 14 – Limitin values for o tical mod lators for digital fibre o tic a plcation 3

Ta le 15 – Electrical an o tical c aracteristic for o tical mod lators for digital f ibre

o tic a plcation 31

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COMMISSION ÉLECTROTECHNIQUE INTERNATIONALE

1 Th Intern tio al Ele trote h ic l Commis io (IEC) is a worldwid org niz tio for sta d rdiz tio c mprisin

al n tio al ele trote h ic l c mmite s (IEC Natio al Commite s) Th o je t of IEC is to promote

intern tio al c -o eratio o al q e tio s c n ernin sta d rdiz tio in th ele tric l a d ele tro ic f i ld To

this e d a d in a ditio to oth r a tivitie , IEC p bls e Intern tio al Sta d rd , Te h ic l Sp cif i atio s,

Te h ic l Re orts, Pu lcly Av ia le Sp cific tio s (PAS) a d Guid s (h re f ter refere to a “IEC

Pu lc tio (s)”) Th ir pre aratio is e tru te to te h ic l c mmite s; a y IEC Natio al Commite intere te

in th s bje t d alt with ma p rticip te in this pre aratory work Intern tio al g v rnme tal a d n

n-g v rnme tal org niz tio s laisin with th IEC als p rticip te in this pre aratio IEC c la orate clo ely

with th Intern tio al Org niz tio for Sta d rdiz tio (ISO) in a c rd n e with c n itio s d termin d b

a re me t b twe n th two org niz tio s

2) Th formal d cisio s or a re me ts of IEC o te h ic l maters e pre s, a n arly a p s ible, a intern tio al

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intere te IEC Natio al Commite s

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misinterpretatio b a y e d u er

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th later

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e p n e arisin o t of th p blc tio , u e of, or rela c u o , this IEC Pu lc tio or a y oth r IEC

Pu lc tio s

8) Ate tio is drawn to th Normativ refere c s cite in this p blc tio Us of th refere c d p blc tio s is

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p te t rig ts IEC s al n t b h ld re p n ible f or id ntifyin a y or al s c p te t rig ts

International Stan ard IEC 6 0 7-1 has b en pre ared by s bcommit e 8 C: Fibre o tic

s stems an active devices, of IEC tec nical commite 8 : Fibre o tic

This third edition can els an re laces the secon edition publ s ed in 2 0 This edition

con titutes a tec nical revision

This edition in lu es the f ol owin sig if i ant tec nical c an es with resp ct to the previou

edition

1) The def i ition of some s mb ls an terms are revised in order to harmonize them with

those in other SC 8 C doc ments

2) A clau e on APD-TIA has b en ad ed

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The text of this stan ard is b sed on the fol owin doc ments:

Ful information on the votin for the a proval of this stan ard can b f ou d in the re ort on

votin in icated in the a ove ta le

This publcation has b en draf ted in ac ordan e with the ISO/IEC Directives, Part 2

A l st of al p rts in the IEC 6 0 7 series, publ s ed u der the general title Semic nductor

o to le tro ic de ic s for fibre o tic s stem a plc tio s, can b f ou d on the IEC we site

The commit e has decided that the contents of this publ cation wi remain u c an ed u ti

the sta i ty date in icated on the IEC we site u der "htp:/we store.iec.c " in the data

related to the sp cifi publ cation At this date, the publ cation wi b

• with rawn,

• re laced by a revised edition, or

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SEMICONDUCTOR OPTOELECTRONIC DEVICES

Part 1: Specif ication template f or essential ratings and characteristics

This p rt of IEC 6 0 7 is a sp cif i ation template for es ential ratin s an c aracteristic of

the f ol owin categories of semicon u tor o to lectronic devices to b u ed in the f ield of

f ibre o tic s stems an s bs stems:

– semicon u tor photo mit ers;

– semicon u tor photo lectric detectors;

– monol thic or h brid integrated o to lectronic devices an their mod les

This p rt of IEC 6 0 7 provides a f rame for the pre aration of detai sp cif i ation f or the

es ential ratin s an c aracteristic

In u in this p rt of IEC 6 0 7, detai sp cif i ation writers ad but do not delete sp cif i ation

p rameters an /or groups of sp cif i ation p rameters f or p rtic lar a plcation

The f olowin doc ments, in whole or in p rt, are normatively referen ed in this doc ment an

are in isp n a le f or its a pl cation For dated ref eren es, only the edition cited a pl es For

u dated ref eren es, the latest edition of the referen ed doc ment (in lu in an

IEC 6 8 5 (al p rts), Safety of las r prod ucts

IEC 6 7 7-5-1, Dis rete s mic nductor devic s a d integrated circ its – P art 5-1:

Opto le tro ic d evic s – Ge eral

3 Terms, def initions and a bre iations

3.1 Terms a d def initions

For the purp ses of this doc ment, the terms an def i ition con ernin ph sical con e ts,

typ s of devices, general terms, an ratin s an c aracteristic given in IEC 6 7 7-5-1 an

the fol owin a ply

3.1.1

PIN photodiod

photodiode with a large intrin ic region san wic ed b twe n P- an N-do ed semicon u tin

region u ed f or the detection of o tical radiation

[SOURCE: IEC 6 0 0-7 1-0 -2 , modif ied — The note has b en deleted

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3.1.2

a ala c e photodiode

APD

photodiode o eratin with a bias voltage s c that the primary photoc r ent u dergo s

ampl fi ation by c mulative multipl cation of c arge car iers

Note 1 to e try: This n te a ple to th Fre c la g a e o ly

[SOURCE: IEC 6 0 0-7 1-0 -3 , modif ied — The note has b en deleted

, normal zed to a freq en y b n of u it width

Note 1 to e try: RIN is u u ly e pre s d in dB/Hz

e

10lo

deviation of the p ak-emis ion wavelen th at a p rtic lar case temp rature or a p rtic lar

f orward c r ent f rom its value at a sp cif ied ref eren e case temp rature or a sp cif ied

ref eren e forward c r ent, resp ctively

Note 1 to e try: Th s e ific refere c temp rature is ty ic ly 2 °C

3.1.5

s

1

input ref le tion coeff icie t

q otient of the hig f req en y reflected voltage to the hig freq en y in ident voltage

3.1.6

E

tr

tra king er or

deviation of the radiant p wer at a p rtic lar case temp rature from its value at a sp cif ied

referen e case temp rature

Note 1 to e try: Th s e if i refere c temp rature is ty ic ly 2 °C

Note 2 to e try: Sp cif i atio s u u ly refer to th ma imum d viatio (a s lute v lu ) in two s e ifie

temp rature ra g s b low a d a o e th s e if i d refere c c s temp rature

Note 3 to e try: Th tra kin er or is u u ly e pre s d a a p rc nta e of th ra ia t p wer at th refere c

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Note 2 to e try: Ph to io e me n a c mplete d vic s c a :

noise res ltin f rom the sp tial an timin f l ctuation of the avalan he car ier multipl cation,

defi ed as the ratio of the noise p wer at a sp cified reverse bias to the ampl fied s ot noise

of the photoc r ent at a ref eren e reverse bias

Note 1 to e try: Th ref ere c re ers v lta e s o ld b s ff i ie tly low th t n c rier multiplc tio ta e pla e

b t s ff i ie tly larg th t th d vic is fuly d plete a d h s a hie e its rate s e da d re p n ivity

RIN relative inten ity noise

4.2 Semicondu tor materials

GaAs, GaAlAs, InGaAs, InP, etc

4.3 Detai s of outl ne a d e c ps lation

4.3.1 IEC an /or national ref eren e n mb r of outlne drawin

4.3.2 Method of en a s lation: glas /metal/plastic/other

4.3.3 Terminal identif i ation an in ication of an electrical con ection b twe n a terminal

an the case

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4.3.4 Characteristic of the o tical p rt: relative orientation to mec anical axis, relative

p sition to mec anical axis, are , n merical a erture

4.3.5 For devices with a f ibre pigtai: information on the pigtai f ibre, kin of protection,

con ector, len th

4.3.6 Inf ormation on the he t sin of the p c age

4.4 Limitin v lue (absolute ma imum ratings) ov r the operating temperature ra ge,

unle s other wis state

Power dis ip tio

Deratin c rv or d ratin fa tor (wh re a pro riate)

For d vic s with pigtai

Te sie forc o d vic s with pigtai

Untig t stru ture:

Tig t stru ture:

a

x re re e ts th v lu to b s e if i d

4.5 Ele tric l a d optic l c ara teristic

Se Ta le 2

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Table 2 – Electric l a d optic l c ara teristic f or LEDs

c, ∆f, f

m, m

4.6.1.1 Typical c rve or co f f icient of radiant p wer vers s temp rature an typical c rve

of radiant output p wer vers s forward c r ent (d.c or pulse, as sp cified)

4.6.1.2 Typical c rve or co f f icient of radiant inten ity vers s temp rature an typical

c rve of adiant inten ity vers s forward c r ent (d.c or pulse, as sp cified)

4.6.2 Typical c rve or co f f icient of c an e in p ak emis ion wavelen th vers s

tem-p rature

4.6.3 Typical radiation diagram

4.6.4 Thermal resistan e, ambient- ated or case- ated

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The laser mod le con ists of the f ol owin materials:

– laser diode (e.g GaAs, GaAlAs, InGaAsP, InP)

– photodiode (e.g Ge, Si, GaInAs)

– TEC element

5.2.2 Structure

L ser diode, e.g gain g ided, in ex g ided, distributed feedb c

5.3.1 IEC an /or national ref eren e n mb r of the outl ne drawin

an the case

5.3.4 Inf ormation on the pigtai f ibre, e.g typ of f ibre, kin of protection, con ector, len th

5.3.5 Inf ormation on the he tsin in of the p c age

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5.4.1.1 Minimum an maximum storage temp ratures (T

stg)

5.4.1.2 Minimum an maximum o eratin case temp ratures (T

c s)

5.4.1.3 Minimum an maximum o eratin s bmou t temp rature (T

s b)

5.4.1.4 Maximum solderin temp rature (solderin time an minimum distan e to case)

(T

sld)

5.4.1.5 Minimum b n radiu of pigtai (at sp cif ied distan e from the case) (r)

5.4.1.6 Shoc (maximum ac eleration an pulse d ration)

5.4.1.7 Vibration (maximum ac eleration an freq en y ran e)

5.4.1.8 Ten i e force alon ca le axis

5.4.1.8.1 Untig t structure

– Maximum ten i e f orce on f ibre (F)

– Maximum ten i e f orce on ca le (F)

5.4.1.8.2 Tig t stru ture

– Maximum ten i e f orce on ca le (F)

5.4.2 La er diode

For laser mod le without TEC, deratin c rve or deratin factor s al b given f or one of the

p rameters 5.4.2.2 to 5.4.2.5 For laser mod le with T C, T

s b

= 2 °C

5.4.2.1 Maximum reverse voltage (V

R)

5.4.2.2 Maximum contin ou f orward c r ent (I

F)

5.4.2.3 Maximum contin ou radiant p wer (ϕ

e)

5.4.2.4 Maximum pulsed f orward c r ent at stated freq en y an pulse d ration (I

F)

5.4.2.5 Maximum pulsed radiant p wer at stated freq en y an pulse d ration (ϕ

e)

5.4.3 Photodiode

5.4.3.1 Maximum reverse voltage (V

R)

5.4.3.2 Maximum forward c r ent (I

F)

5.4.4 Thermal s nsor (where ap ro riate)

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5.4.5 Thermoele tric co ler (where appropriate)

5.4.5.1 Maximum co ler c r ent u der co l n an he tin (I

P)

5.5 Ele tric a d optic l c aracteristic

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m, m a d f

is th ra ia t p wer v lu of th la er c ip o s bmo nt, re re e tativ of th p rorma c a d

rela i ty of d vic s ma uf acture u in th s me te h olo y a d s bmite to th s me q alty a s ra c

pro e ure

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5.6.2 Resp n e time of the thermistor temp rature to the c an e of co ler c r ent (where

an the case

6.3.4 Characteristic of the o tical p rt: relative orientation to mec anical axis, relative

6.3.5 For devices with pigtai : inf ormation on the pigtai fibre, typ of f ibre, kin of

protection, con ector, len th

6.3.6 Inf ormation on the he t sin of the p c age

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unle s otherwis state

Se Ta le 4

Table 4 – Limiting v lue f or PIN photodiode

Sold rin temp rature at ma imum s ld rin time a d

minimum dista c to c s s e ifie

For d vic s with pigtai

Te sie forc o d vic s with pigtai

Untig t stru ture:

Tig t stru ture:

– Te sie forc o pigtai alo g its a is

a

x re re e ts th v lu tob s e if i d

Trang 20

Se Ta le 5

Table 5 – Ele tric l a d optic l c ara teristic f or PIN photodiode

Chara teristic

R(e), f

0, ∆f, R

L, λ

p, ∆λ

p, ∆λ, Φ

e

FD, S

p, ∆λ or Φ

p, ∆λ, Φ

p, ∆λ, p ls b s Φ

e1,

e, R

p, ∆λ, Φ

e, R

6.6.1 Typical c rve of dark c r ent vers s voltage, at dif f erent temp ratures

6.6.2 Typical c rve of total ca acitan e vers s reverse voltage

6.6.3 Relative sen itivity vers s wavelen th

6.6.4 Relative sen itivity vers s temp rature

6.6.5 Deratin c rve or deratin f actor of maximum dis ip tion

Trang 21

7 Av lanc e photodiodes (APDs) with or without pigtai s

an the case

7.3.4 Characteristic of the o tical p rt: relative orientation to the mec anical axis, relative

7.3.5 Inf ormation on the pigtai f ibre (where a pro riate): type of f ibre, kin of protection,

con ector, len th

7.4 Limitin v lu s (absolute ma imum ratings) ov r the operating temperature ra ge,

7.4.1 Minimum b n radiu of the pigtai , where a pro riate

7.4.2 Minimum an maximum storage temp rature (T

stg)

7.4.3 Minimum an maximum o eratin ambient or case temp ratures (T

amb

or T

c s)

7.4.4 Maximum solderin temp rature (T

sld) (solderin time an minimum distan e to case

to b sp cif ied)

7.4.5 Maximum p wer dis ip tion at ambient or case temp rature of 2 °C (P

tot) an

deratin c rve or deratin f actor

7.4.6 Maximum pul f orce f or pigtai (f ibre or ca le), where a pro riate, in the direction of

the axis of the input pigtai (f ibre or ca le)

7.4.7 Maximum reverse c r ent (I

R)

7.4.8 Maximum forward c r ent (I

F)

Se Ta le 6

Trang 22

Table 6 – Ele tric l a d optic l c ara teristic for a ala c e

photodiod s (APDs) with or without pigtai s

e, λ

p, ∆λ

s e ifie

Sa

e,λ

p, ∆λ s e if i d

Sb

p, ∆λ, ϕ

L,

ϕ

e1: p a ra ia t p wer

ϕ

e: ofs t ra ia t p wer

p, ∆λ, ϕ

R, I

PO, λ

p,

∆λ, M, f

0,

p, ∆λ, f, ∆f s e if i d

7.6.1 Curve of bre k own voltage vers s temp rature

7.6.2 Curve of sen itivity vers s wavelen th

7.6.3 Curve of ca acitan e vers s reverse voltage

7.6.4 Curve of multipl cation factor vers s reverse voltage at dif ferent temp ratures

Trang 23

7.6.7 Curve of ex es noise factor vers s reverse voltage (where a pro riate)

7.6.8 Curve of noise c r ent vers s reverse voltage (where a pro riate)

8 PIN-TIA modules f or f ibre optic systems or subsystems

Ambient- ated or case- ated PIN-TIA mod les for f ibre o tic s stems or s bs stems

The PIN-TIA mod le con ists of the f ol owin b sic p rts:

– PIN photodiode;

– TIA circ its;

– f ibre pigtai , pigtai con ectors, rece tacles (con ectorized p c age)

The PIN-TIA mod le con ists of the fol owin semicon u tor materials:

– PIN photodiode: Si, Ge, InGaAs, etc

– TIA circ its: GaAs, Si, etc

8.3 Stru ture

The stru ture of the PIN-TIA mod le is as f ol ows:

– PIN photodiode: Mesa, planar, etc

– TIA circ its: CMOS, Bi-CMOS, HBT, Bi-p lar etc

– information on the f ibre coupl n : ta er typ , len coupl n , etc

– information on the circ it: hig imp dan e, tran imp dan e, b n width, etc

– information on the p c age: pigtai , rece tacle (con ectorized p c age), etc

– IEC an /or national ref eren e n mb r of outl ne drawin

– Method of en a s lation: glas /metal/plastic/other

– Terminal identif i ation an in ication of an electrical con ection b twe n a terminal an

the case

– Characteristic of the o tical p rt: orientation relative to mec anical axis, p sition relative

to mec anical axis, are , n merical a erture

– Inf ormation on the pigtai f ibre: typ of f ibre, kin of protection, con ector, len th

– Inf ormation on the con ector/rece tacle

Trang 24

Op ratin temp rature

eith r o eratin ambie t temp rature

Table 8 – Operatin conditions for PIN-TIA module

Requirements

Trang 25

mB, B a d C/N

s e ifie

or

b) λ

p, ∆λ,bit rate, sig al

m,

e, R

L

s e ifie

V

R, λ

p, ∆λ, Φ

e, R

e1, Φ

e, R

– Relative resp n ivity vers s wavelen th

– Typical thermal variation of the of f set voltage

– Inf ormation on the eq al zation

Trang 26

9 APD-TIA modules f or f ibre optic systems or subsystems

Ambient- ated or case- ated APD-TIA mod les f or f ibre o tic s stems or s bs stems

The APD-TIA mod le con ists of the f ol owin b sic p rts:

– APD;

– TIA circ its;

– f ibre pigtai , pigtai con ectors, rece tacles (con ectorized p c age)

The APD-TIA mod le con ists of the f ol owin semicon u tor materials:

– APD: Si, Ge, InGaAs, etc

– TIA circ its: GaAs, Si, etc

9.3 Stru ture

The stru ture of the APD-TIA mod le is

– APD: Mesa, planar, etc

– TIA circ its: CMOS, Bi-CMOS, HBT, Bi-p lar etc

– information on the f ibre coupl n : ta er typ , len coupl n , etc

– information on the circ it: hig imp dan e, tran imp dan e, b n width, etc

– information on the p c age: pigtai , rece tacle (con ectorized p c age), etc

– IEC an /or national ref eren e n mb r of outl ne drawin

the case

– Inf ormation on the pigtai f ibre: typ of f ibre, kin of protection, con ector, len th

– Inf ormation on the con ector/rece tacle

9.5 Limiting v lue (absolute ma imum ratin s) ov r the operating temperature ra ge,

Se Ta le 10

Trang 27

Table 10 – Limiting v lue for APD-TIA module

Requirements

Trang 28

10 Laser diode modules f or pumping an optical f ibre ampl f ier

10.1 Type

The laser mod le con ists of the fol owin b sic p rts:

– laser diode;

– f ibre pigtai (where a pro riate);

– len es (where a pro riate);

– photodiode (where a pro riate);

– thermal sen or (where a pro riate);

– TEC element (where a pro riate);

– isolator (where a pro riate)

The laser diode mod le for pumpin an o tical f ibre ampl fier con ists of the fol owin

semicon u tor materials:

– TEC element:

10.3 Structure

L ser diode: gain g ided, in ex g ided, distributed feedb c , rid e waveg ide, BH, etc

– IEC an /or national ref eren e n mb r of the outl ne drawin

the case

– Inf ormation on the pigtai f ibre: typ of f ibre, kin of protection, con ector, an len th

– Inf ormation on the he t sin in of the p c age







Trang 29

Se Ta le 12

Table 12 – Limitin v lu s for la er diod module

f or pumping a optic l fibre ampl f ier

Requirements

Trang 30

Table 13 – Ele tric l a d optic l c ara teristic f or la er diode modules

f or pumping a optic l f ibre ampl f ier

Ib

, ∆Ib

or Φ

e,

amb, min

amb, ma

Trang 31

– Median l f e u der sp cified case temp rature at sp cif ied output p wer

– DC forward c r ent of the laser diode cor esp n ing to Φ

– Resp n e time of the thermistor temp rature with resp ct to the c an e of co ler c r ent

(where a pro riate)

– Thermal resistan e b twe n laser diode ju ction an case (for the laser mod le without

The o tical mod lator mod le con ists of f ol owin b sic p rts:

– mod lator (Mac -Zeh der typ , electro-a sorption typ , etc.);

– input an output f ibre pigtai (where a pro riate);

– thermal sen or (where a pro riate);

– TEC element (where a pro riate);

– photodiode (where a pro riate)

1 2 Materials

The materials of o tical mod lators f or digital fibre o tic a pl cation are

– mod lator: InP, GaAs, InGaAs, InAlAs, InGaAsP, LiNbO

3, etc

– thermal sen or;

Trang 32

1 4 Detai s of outl ne a d e c ps lation

– IEC an /or national ref eren e n mb r of the outlne drawin

the case

– Characteristic of the o tical p rt: relative orientation to mec anical axis, relative p sition

– Inf ormation on the pigtai f ibre: type of f ibre, kin of protection, len th, con ector typ ,

an ular orientation of the con ector to the f ibre p larization axis (where a pro riate)

– Inf ormation on the he tsin in of the p c age

1 5 Limitin v lu s (absolute ma imum ratin s)

Limitin values as s own in Ta le 14 are over the o eratin temp rature ran e, u les

otherwise stated Relative h midity an air pres ure s ould b sp cified for al devices in non

-hermeticaly se led p c ages

Table 14 – Limiting v lue for optic l modulators for digital f ibre optic appl c tions

Requirements

Trang 33

Chara teristic Symb l

Requirements

For mo ulator mo ule with ut T C, th d ratin c rv or d ratin fa tor s al b giv n for o e of th

p rameters of 1 5.9 to 1 5.1 For mo ulator mo ule with T C, T

Table 15 – Ele tric l a d optic l c ara teristic f or optic l modulators

for digital f ibre optic appl c tions

for mo ulators with ut T C,

unle s otherwis stated

s b

Trang 34

for mo ulators with ut T C,

unle s otherwis stated

C T ermo-ele tric co ler element

(where ap ro riate)

– Extin tion ratio (or output p wer) as a f un tion of reverse voltage

– Resp n e time of the thermal sen or temp rature with resp ct to the c an e of co ler

c r ent (where a pro riate)

– Bias sta i ty (where a pro riate)

– Bias temp rature co f ficient, in either V/°C or %/°C (where a pro riate)

1 8 Hazards

Se IEC 6 8 5

Tiêu đề	IEC 62007-1:2015 - Semiconductor optoelectronic devices for fiber optic system applications – Part 1: Specification template for essential ratings and characteristics
Trường học	International Electrotechnical Commission (IEC)
Chuyên ngành	Electrical and Electronic Technologies
Thể loại	Standards Document
Năm xuất bản	2015
Thành phố	Geneva

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Số trang	70
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