IEC TS 62972 Edition 1 0 201 6 07 TECHNICAL SPECIFICATION SPECIFICATION TECHNIQUE General l ighting – Organic l ight emitting diode (OLED) products and related equipment – Terms and definitions Éclair[.]
Trang 1General l ght ing – Organic l ght emitt ing diode (OLED) product s and relat ed
equipment – Terms and definit ions
Trang 2THIS PUBLICATION IS COPYRIGHT PROT CTED
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Trang 3General l ght ing – Organic l ght emit t ing diode (OLED) products and related
equipment – Terms and definit ions
W arnin ! Mak e s re th t you o tain d this publc tion from a a thorize distribut or
A tt ention! Veui ez vou a s rer qu vou avez o te u c t te publc tion v ia u distribute r a ré
Trang 4CONTENTS
FOREWORD 3
1 Sco e 5
2 Clas ifi ation of terms 5
3 Fu damental terms 5
4 Terms related to ph sical pro erties 7
5 Terms related to con tru tive elements 9
6 Terms related to p rf orman e an sp cif i ation 12
Bibl ogra h 14
Trang 5INTERNATIONAL ELECTROTECHNICAL COMMISSION
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Trang 7GENERAL LIGHTING – ORGANIC LIGHT EMITTING DIODE (OLED)
This Tec nical Sp cif i ation esta l s es terms an def i ition sp cifi f or general l g tin
OLED l g t sources an related eq ipment
2 Clas if ic tion of terms
Terms sp cif i f or general lg tin OLED l g t sources an related eq ipment are clas ified as
f ol ows:
a) f un amental terms;
b) terms related to ph sical pro erties;
c) terms related to con tru tive elements;
d) terms related to p rf orman e an sp cif i ation
NOT This cla sific tio is in ln with IEC 6 3 1 1 2:2 14 Howe er, th cla sif i atio of terms relate to th
l g t emitin diode con istin of an electrolumines ent zone made of organic comp u d
whic are situated b twe n two electrodes
Note 1 to e try: This n te a ple to th Fre c la g a e o ly
3.2
polymeric org nic l ght emit ing diode
OLED where al the organic semicon u tor materials are p lymers
Note 1 to e try: This n te a ple to th Fre c la g a e o ly
3.3
smal mole ule orga ic l g t emit ing diode
SMOLED
OLED where al the organic semicon u tor materials are smal molec les
Note 1 to e try: This n te a ple to th Fre c la g a e o ly
3.4
sta k d OLED
OLED con istin of two or more emis ion layers an at le st one c arge generation layer
b twe n two emis ion layers
Note 1 to e try: Th re c n b emis io la ers in id a sta k d OLED th t are n t s p rate b a c arg
g n ratio la er Howe er, at le st o e p ir of emis io la ers is s p rate b a c arg g n ratio la er
Trang 83.5
bot om emis ion OLED
OLED whic emits l g t throu h the s bstrate side
3.6
OLED whic emits l g t throu h the en a s lation side
3.7
tra spare t OLED
OLED in whic the lg t-emitin are is tran p rent in the of f -state
smal est f un tional OLED l g t source whic can ot b se arated into smaler OLED l g tin
elements an containin at le st one contact led e with at le st one p sitive an one
negative p le f or con ection to the electrical p wer s p ly
3.13
OL D pa el
in e en ently o era le u it OLED prod ct containin one or more OLED ti es an me n of
con ection to electrical s p ly s c as a con ector, PCB (printed circ it b ard), p s ive
electronic comp nents an o tional y a frame
Trang 94 Terms relate to physical properties
4.1
l ght output are
A
LO
are of an OLED ti e, p nel or mod le desig ed to emit l g t, in lu in active luminou are s,
bu b rs an other mec anical stru tures, but ex lu in ed es
Note 1 to e try: Th lg t o tp t are is e pre s d in m
are of an OLED ti e, p nel or mod le desig ed to emit l g t an in lu in in er non-luminou
are s d e to def ects, but ex lu in layout def i ed bu b rs an other mec anical stru tures
Note 1 to e try: Th a tiv lumin u are is e pre s d in m
Note 1 to e try: This term is s metime in or e tly c le "lumin u c re t eff i ie c "
Note 2 to e try: Th lumin u c re t ef fic c is e pre s d inc /m
Note 1 to e try: This term is o ly u e with tra s are t OLED p n ls
Note 2 to e try: Th emis io ratio is a q a tity of dime sio o e
Trang 10Note 1 to e try: Th e tern l q a tum ef ficie c c n b e pre s d a
o tIQEEQE
ηη
o t
ηη
4.9
forward dire tion
F
direction of electrical c r ent that res lts when the HIL/HTL side of the OLED stac (p-typ
region) con ected to an electrode is on p sitive p tential relative to the EIL/ETL side (n-typ
region) con ected to the other electrode
Note 1 to e try: Th forward dire tio is d n te b a din th s b cript F to th s mb l of th q a tity
c n ern d, for e ample forward c re t is d n te a I
4.10
re ers dire tion
R
direction of electrical c r ent when the HIL/HTL side of the OLED stac is con ected to an
electrical contact whic is on negative p tential with regard to the con ection of the EIL/ETL
side
Note 1 to e try: Th re ers dire tio is d n te b a din th s b cript R to th s mb l of th q a tity
c n ern d, for e ample re ers c re t is d n te a I
R
4.1
f orward c r e t
I
F
electrical c r ent in f orward direction
Note 1 to e try: Th forward c re t is e pre s d inA
4.12
f orward volta e
U
F
p tential dif feren e p rtainin to the f orward direction, de en ent on the f orward c r ent at a
given temp rature
Note 1 to e try: Th forward v lta e is e pre s d in V
[SOURCE: IEC 6 5 4:2 14, 3.13, modif ied — Note 2 to entry has b en deleted
4.13
I
R
electrical c r ent in reverse direction
Note 1 to e try: Th re ers c re t is e pre s d inA
Trang 114.14
U
R
p tential dif feren e p rtainin to the reverse direction de en ent on the reverse c r ent
Note 1 to e try: Th re ers v lta e is e pre s d in V
4.15
uniformity
ph sical mag itu e of c an e present in a sp tial luminan e or c romaticity distribution
Note 1 to e try: This d f i itio d e n t ta e p rc ptio into a c u t
4.16
homog neity
p rceived mag itu e of c an e present in a sp tial luminan e or c romaticity distribution
5.1
f luore c nt emit er
emit er where only the sin let state ex iton can s ow radiative decay an photon emis ion
Note 1 to e try: A flu re c nt emiter is a ty e of emiter material Ac ordin to s in statistic in q a tum
c emistry, e cito s forme b a ele tro a d a h le c n h v two difere t s in multiplcitie , ie 1 (sin let state)
or 3 (triplet state) Simply s o e , 2 % of th state are sin lets a d 7 % are triplets In a f l ore c nt emiter
o ly th sin let state e cito s c n s ow ra iativ d c y a d p oto emis io Th th oretic l ma imum of th
intern l q a tum eff i ie c is 2 %
5.2
phosphore c nt emit er
emit er where sin let an triplet state ex iton can s ow radiative decay an photon emis ion
Note 1 to e try: A p o p ore c nt emiter is a ty e of emiter material Ac ordin to s in statistic in q a tum
c emistry, e cito s f orme b a ele tro a d a ele tro h le c n h v two difere t s in multiplcitie , i e 1
(sin let state) or 3 (triplet state) Simply s o e , 2 % of th state are sin lets a d 7 % are triplets In a
p o p ore c nt emiter sin let a d triplet state e cito s c ns ow ra iativ d c y a d p oto emis io
5.3
hybrid OLED sta k
OLED stac that u es more than one kin of material an /or proces in method
Note 1 to e try: A h brid OLED sta k c n b a f olows, for e ample:
a) a OLED sta k whic c ntain flu re c nt a d p o p ore c nt emiters,
b) a OLED sta k whic c ntain p lymer a d smal mole ule la ers,
c) a OLED sta k whic c mbin s s lutio -pro e s d a d e a orate org nic la ers
[SOURCE: IEC 6 3 1-1-2:2 14, 2.2.16, modif ied — The terms "h brid organic l g t emit in
diode" an /"h brid OLED" were re laced with "h brid OLED stac " The defi ition was
modif ied to fit the term List entry c) was ad ed to the note
5.4
s bstrate
material to car y the OLED stac
Note 1 to e try: Mo t c mmo is th u e of gla s, metal fois or p lymer fois
5.5
OL D sta k
core element of an OLED to generate l g t, con istin of a multi-layer stru ture with
sig if i ant lateral dimen ion where e c layer has a sp cial f un tional ty, the two
Trang 12san wic in layers at to an b t om b in electrodes f or con ection to a p wer s p ly an
at le st one of these electrodes b in tran p rent to ena le l g t extraction
layer adjacent to the anode an desig ed to improve the hole injection
Note 1 to e try: Th HIL is p rt of th OLED sta k
Note 2 to e try: This n te a ple to th Fre c la g a e o ly
5.9
ele tron inje tion la er
EIL
layer adjacent to the cathode an desig ed to improve the electron injection
Note 1 to e try: Th EIL is p rt of th OLED sta k
Note 2 to e try: This n te a ple to th Fre c la g a e o ly
5.10
hole tra sport la er
HT
layer in ide the OLED stac with a relatively hig mo i ty of holes an u ed to adju t the
c arge car ier b lan e in the OLED stac
Note 1 to e try: Th s e ial c s of a ele tric ly d p d HTL for furth r c n u tivity in re s is c le p-HTL
Note 2 to e try: This n te a ple to th Fre c la g a e o ly
5.1
hole bloc ing la er
HBL
layer in ide the OLED stac with a relatively low mo i ty of holes or dif feren e of hig est
oc upied molec lar orbital level an u ed to adju t the c arge car ier b lan e in the stac
Note 1 to e try: This n te a ple to th Fre c la g a e o ly
5.12
ele tron tra sport la er
ETL
layer in ide the OLED stac with a relatively hig mo i ty of electron an u ed to adju t the
c arge car ier b lan e in the stac
Note 1 to e try: Th s e ial c s of a ele tric ly d p d E L for f urth r c n u tivity in re s is c le n-E L
Note 2 to e try: This n te a ple to th Fre c la g a e o ly
5.13
ele tron bloc ing la er
EBL
layer in ide the OLED stac with a relatively low mo i ty of electron an u ed to adju t the
c arge car ier b lan e in the OLED stac
Trang 13Note 1 to e try: This n te a ple to th Fre c la g a e o ly.
5.14
emis iv la er
EML
layer of an OLED stac desig ed for ex iton formation an photon generation
Note 1 to e try: Th EML c n c n ist of s v ral materials
Note 2 to e try: This n te a ple to th Fre c la g a e o ly
5.15
c arge ge eration la er
CGL
layer in a stac ed OLED b twe n two sin le OLED stru tures generatin electron f or one
adjacent OLED u it (actin as a cathode) an holes f or another adjacent OLED u it (actin as
an anode)
Note 1 to e try: Th CGL is n t dire tly c n e te to a ele tric l p wer s p ly It e a le th s rial c n e tio
of two or more OLED stru ture whic are pla e o to of e c oth r
Note 2 to e try: This n te a ple to th Fre c la g a e o ly
5.16
interla er
ITL
layer whic se arates other fun tional layers
Note 1 to e try: Two e ample are interla ers to s p rate th flu re c nt f rom th p o p ore c nt emis io z n
a d interla ers to s p rateemis io la ers a d inje tio la ers
Note 2 to e try: This n te a ple to th Fre c la g a e o ly
en losin stru ture to protect the organic layers an the electrodes from u desired
5.2
thin f ilm e c ps lation
TFE
en a s lation by one or more thin layers directly co tin the OLED
Note 1 to e try: This n te a ple to th Fre c la g a e o ly
5.21
optic l outcoupl ng structure
o tical stru tures to en an e the lg t extraction f rom the OLED
[SOURCE: IEC 6 3 1-1-2:2 14, 2.4.3 , modified — The phrase "to the air has b en
deleted
Trang 14e ternal outcoupl ng structure
o tical stru tures whic are located on the outer s bstrate s rface to en an e the l g t
extraction
5.2
intern l outcoupl ng structure
o tical stru tures whic are located b twe n the OLED stac an the s bstrate to brin more
l g t into the s bstrate whic f i al y le d to a hig er amou t of photon extracted
5.2
busbar
by desig non-luminou , grid-lke or other p t erned stru ture within the are of OLED
segments u ed f or the improvement of the c r ent den ity distribution on tran p rent
electrodes
5.2
OL D c l
smal p rt of the lg t output s rf ace of an OLED ti e whose b u daries are def i ed by bu b r
stru tures an whic can ot b in e en ently control ed
5.2
conta t le ge
<OLED p nel> exp sed are of an OLED ti e desig ed f or electrical con ection to one or
more electrodes
<OLED p nel> s rface of an OLED tie, p nel or mod le whic is inten ed to emit l g t,
in lu in in er non-luminou are s d e to defects, but ex lu in layout def i ed bu b rs,
ed es an other mec anical stru tures
5.3
l ght output s rf ac
<OLED p nel> s rf ace of an OLED ti e, p nel or mod le whic emits l g t, in lu in active
luminou s rface, bu b rs an an other mec anical stru ture but ex lu in the ed es
6 Terms relate to perf ormance and spe if ic tions
6.1
a ein
<OLED l g t source precon itionin of the OLED l g t source b fore initial values are taken
[SOURCE: IEC 6 5 4:2 14, 3.1, modif ied — The def i ition has b en amen ed with
ref eren es to OLED
Trang 15smal are remarka ly darker than the s r ou din l g t output are of the OLED p nel
Note 1 to e try: A d rk s ot c n b d e to lower c re t d n ity or a o e circ it in th t are
<OLED l g t source ke pin an OLED p nel switc ed on u der sp cified electrical input to
o tain sta le con ition
6.6
stabi zation time
<OLED l g t source time that the OLED l g t source req ires to o tain sta le con ition with
sp cif ied electrical input
Trang 16Bibl ography
IEC 6 3 1-1-2:2 14, Org nic li ht emitting diod e (OLED) d is la s – P art 12: Termin lo y
a d letter s mb ls
IEC 6 5 4:2 14, Ge eral li htin – Light emitting d iode (LED) prod ucts a d related
e uipme t – Terms a d d efinitio s