Iec 62209 1 2016

GSM glo al s stem for mo i e commu icationGPRS general p ck t radio service EDGE en an ed data rates for GSM evolution TDMA time division multiple ac es CDMA code division multiple ac es

Measurement procedure for the assessment of specific absorption rate of

human exposure to radio frequency fields from hand-held and body -mounted

wireless communication devices –

Part 1: Devices used next to the ear (Frequency range of 300 MHz to 6 GHz)

Procédure de mesure pour l'évaluation du débit d'absorption spécifique de

de communications sans fi tenus à la main ou portés près du corps –

Partie 1: Dispositifs uti isés à proximité de l orei le (Plage de fréquences de

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csc@ie c

Measurement procedure for the assessment of specific absorption rate of

human exposure to radio frequency fields from hand-held and body -mounted

wireless communication devices –

Part 1: Devices used next to the ear (Frequency range of 300 MHz to 6 GHz)

Procédure de mesure pour l'évaluation du débit d'absorption spécifique de

l'exposition humaine aux champs radiofréquences produits par les dispositifs

de communications sans fi tenus à la main ou portés près du corps –

Partie 1: Dispositifs uti isés à proximité de l orei le (Plage de fréquences de

Warnin ! Mak e s re th t y ou o tain d this publc tion from a a thorize distributor

Ate tion! Ve i ez v ou a s rer qu v ou av ez o te u c te publc tion via u distribute r a ré

insid

CONTENTS

FOREWORD 1

INTRODUCTION 13 1 Sco e 14 2 Normative referen es 14 3 Terms an definition 14 4 Symb ls an a breviation 19 4.1 Ph sical q antities 19 4.2 Con tants 2

4.3 Ab reviation 2

5 Me s rement s stem sp cification 2

5.1 General req irements 2

5.2 Phantom sp cification (s el an l q id) 2

5.3 Han an device holder con ideration 2

5.4 Scan in s stem req irements 2

5.5 Device holder sp cification 2

5.6 Characteristic of the re dout electronic 2

6 Protocol for SAR as es ment 2

6.1 General 2

6.2 Me s rement pre aration 2

6.2.1 Pre aration of tis ue-eq ivalent l q id an system che ck 2

6.2.2 Pre aration of the wireles device u der test (DUT) 2

6.2.3 Op ratin modes 2

6.2.4 Positionin of the DUT in relation to the phantom 2

6.2.5 Test freq en ies for DUT 3

6.3 Tests to b p rformed 3

6.4 Me s rement proced re 3

6.4.1 General 3

6.4.2 General proced re 3

6.4.3 SAR me s rements of han sets with multiple anten as or multiple tran mit ers 3

6.5 Post proces in of SAR me s rement data 4

6.5.1 Interp lation 4

6.5.2 Extra olation 4

6.5.3 Definition of the averagin volume 4

6.5.4 Se rc in for the maxima 4

6.6 Fast SAR testin 4

6.6.1 General 4

6.6.2 Fast SAR me s rement proced re A 4

6.6.3 Fast SAR testin of req ired freq en y b n s 4

6.6.4 Fast SAR me s rement proced re B 5

6.7 SAR test red ction 5

6.7.1 General req irements 5

6.7.2 Test red ction for diferent o eratin modes in the same freq en y b n u in the same wireles tec nolog 5

6.7.3 Test red ction b sed on c aracteristic of DUT desig 5

6.7.5 Test red ction b sed on simultane u multi-b n tran mis ion

con ideration 5

7 Un ertainty estimation 5

7.1 General con ideration 5

7.1.1 Con e t of u certainty estimation 5

7.1.2 Typ A an Typ B evaluation 5

7.1.3 Degre s of fre dom an coverage factor 5

7.2 Comp nents contributin to u certainty 6

7.2.1 General 6

7.2.2 Cal bration of the SAR pro es 6

7.2.3 Contribution of mec anical con traints 6

7.2.4 Phantom s el 6

7.2.5 Device p sitionin an holder u certainties 6

7.2.6 Tis ue-eq ivalent l q id p rameter u certainty 6

7.2.7 Un ertainty in SAR cor ection for deviation in p rmit ivity an con u tivity 7

7.2.8 Me s red SAR drif 7

7.2.9 RF ambient con ition 7

7.2.10 Contribution of p st proces in 7

7.2.1 SAR s al n u certainty 81

7.2.12 Deviation of exp rimental sources 8

7.2.13 Other u certainty contribution when u in syste m v ldato sources 8

7.3 Calc lation of the u certainty bu get 8

7.3.1 Combined an exp n ed u certainties 8

7.3.2 Maximum exp n ed u certainty 8

7.4 Un ertainty of fast SAR method b sed on sp cific me s rement proced res an p st proces in tec niq es 9

7.4.1 General 9

7.4.2 Me s rement u certainty evaluation 9

8 Me s rement re ort 101

8.1 General 101

8.2 Items to b recorded in the me s rement re ort 101

An ex A (normative) Phantom sp cification 10

A.1 Rationale for the SAM phantom s a e 10

A.2 SAM phantom sp cification 10

A.2.1 General 10

A.2.2 Phantom s el 10

A.3 Flat phantom sp cification 1 0

A.4 Tis ue-eq ivalent l q id 1 1

An ex B (normative) Cal bration an c aracterization of dosimetric pro es 1 3

B.1 Introd ctory remarks 1 3

B.2 Line rity 1 4

B.3 As es ment of the sen itivity of the dip le sen ors 1 4

B.3.1 General 1 4

B.3.2 Two-ste cal bration proced res 1 4

B.3.3 One ste cal bration proced res 12

B.3.4 Co xial calorimeter method 12

B.4 Isotro y 12

B.4.2 Hemispherical isotro y 12

B.5 L wer detection l mit 131

B.6 Bou dary efects 131

B.7 Resp n e time 131

An ex C (normative) Post proces in tec niq es 13

C.1 Extra olation an interp lation s hemes 13

C.1.1 Introd ctory remarks 13

C.1.2 Interp lation s hemes 13

C.1.3 Extra olation s hemes 13

C.2 Averagin s heme an maximum fin in 13

C.2.1 Volume average s hemes 13

C.2.2 Extru e method of averagin 13

C.2.3 Maximum p a SAR fin in an u certainty estimation 13

C.3 Example implementation of p rameters for s an in an data evaluation 13

D.2.3 System che ck source 13

D.2.4 System che ck source input p wer me s rement 13

D.2.5 System che ck proced re 13

D.3 System v ldato 13

D.3.1 Purp se 13

D.3.2 Phantom set up 13

D.3.3 System v ldato sources 13

D.3.4 Referen e dip le input p wer me s rement 14

D.3.5 System v ldato proced re 14

D.3.6 Numerical target SAR values 141

D.4 Fast SAR method system v ldato an system ch ck 14

D.4.1 General 14

D.4.2 Fast SAR method system v ldato 14

D.4.3 Fast SAR method system ch ck 14

An ex E (normative) Interla oratory comp rison 14

E.1 Purp se 14

E.2 Phantom set up 14

E.3 Referen e wireles han sets 14

E.4 Power set up 14

E.5 Interla oratory comp rison – Proced re 14

An ex F (informative) Definition of a phantom co rdinate s stem an a device u der

test co rdinate s stem 14

An ex G (informative) SAR system v ldato sources 15

G.1 Stan ard dip le source 15

G.2 Stan ard waveg ide source 151

An ex H (informative) Flat phantom 15

An ex I (informative) Example recip s for phantom he d tis ue-eq ivalent l q id 15

I 1 Overview 15

I 2 In redients 15

I 3 Tis ue-eq ivalent l q id formulas (p rmitivity/con u tivity) 15

An ex J (informative) Me s rement of the dielectric pro erties of l q id an

u certainty estimation 16

J.1 Introd ctory remarks 16

J.6 Dielectric pro erties of referen e l q id 16

An ex K (informative) Me s rement u certainty of sp cific fast SAR method an

fast SAR examples 16

K.2.8 Me s rement s stem immu ity / secon ary rece tion 17

K.2.9 Deviation in phantom s a e 17

K.2.10 Sp tial variation in dielectric p rameters 17

K.3 Fast SAR examples 17

K.3.1 General 17

K.3.2 Example 1: Tests for one freq en y b n an mode 17

K.3.3 Example 2: Tests over multiple freq en y b n s an modes 18

K.3.4 Example 3: Tests for one freq en y b n an mode (Proced re B) 18

K.3.5 Example 4: Tests over multiple freq en y b n s an modes (Proced re

B) 19

L.1 General 19

L.2 Test red ction b sed on c aracteristic of DUT desig 19

L.2.1 General 19

L.2.2 Statistical analy is overview 19

L.2.3 Analy is res lts 19

L.2.4 Con lu ion 19

L.2.5 Exp n ion to multi tran mis ion anten as 19

L.2.6 Test red ction b sed on analy is of SAR res lts on other sig al

mod lation 19

L.3 Test red ction b sed on SAR level analy is 2 0

L.3.1 General 2 0

L.3.2 Statistical analy is 2 1

L.3.3 Test red ction a pl ca i ty example 2 4

L.4 Other statistical a pro c es to se rc for the hig SAR test con ition 2 5

L.4.1 General 2 5

L.4.2 Test red ction b sed on a desig of exp riments (DOE) 2 5

L.4.3 Analy is of u stru tured data 2 6

An ex M (informative) Ap lyin the he d SAR test proced res 2 7

An ex N (informative) Stu ies for p tential han efects on he d SAR 210

N.1 Overview 210

N.2 Backgrou d 210

N.2.1 General 210

N.2.2 Han phantoms 21

N.3 Summary of exp rimental stu ies 21

N.3.1 General 21

N.3.2 Experimental stu ies u in ful y compl ant SAR me s rement s stems 21

N.3.3 Experimental stu ies u in other SAR me s rement s stems 21

N.4 Summary of computational stu ies 212 N.5 Con lu ion 212 An ex O (informative) Quick start g ide 213 O.1 General 213 O.2 Quick start g ide hig level flow-c art 213 Bibl ogra h 217 Fig re 1 – Vertical an horizontal referen e l nes an referen e Points A, B on two example device typ s: a ful tou h s re n smart phone ( o ) an a k yb ard han set (b tom) 2

Fig re 2 – Che k p sition of the wireles device on the lef side of SAM where the device s al b maintained for the phantom test set up 3

Fig re 3 – Ti t p sition of the wireles device on the lef side of SAM 3

Fig re 4 – An alternative form factor DUT an stan ard co rdinate an referen e p ints a pled 3

Fig re 5 – Block diagram of the tests to b p rformed 3

Fig re 6 – Orientation of the pro e with resp ct to the l ne normal to the phantom s rface, s own at two diferent location 3

Fig re 7 – Me s rement proced re for dif erent typ s of cor elated sig als 4

Fig re 8 – The Fast SAR me s rement proced re B 5

Fig re 9 – Modified c art of 6.4.2 5

Fig re 10 – Orientation an s rface of the averagin volume relative to the phantom

s rface 81

Fig re A.1 – Il u tration of dimen ion in Ta le A.1 an Ta le A.2 10

Fig re A.2 – Close-up side view of phantom s owin the e r region 10

Fig re A.3 – Side view of the phantom s owin relevant markin s 10

Fig re A.4 – Sagital y bisected phantom with exten ed p rimeter (s own placed on

its side as u ed for device SAR tests) 10

Fig re A.5 – Picture of the phantom s owin the central strip 10

Fig re A.6 – Cros -sectional view of SAM at the referen e plane 1 0

Fig re A.7 – Dimen ion of the el ptical phantom 1 1

Fig re B.1 – Exp rimental set up for as es ment of the sen itivity (con ersion factor)

u in a vertical y-oriented rectan ular waveg ide 1 8

Fig re B.2 – Il u tration of the anten a gain evaluation set up 121

Fig re B.3 – Sc ematic of the co xial calorimeter s stem 12

Fig re B.4 – Set up to as es spherical isotro y deviation in tis ue-eq ivalent lq id 12

Fig re B.5 – Alternative set up to as es spherical isotro y deviation in tis u

e-eq ivalent lq id 12

Fig re B.6 – Exp rimental set up for the hemispherical isotro y as es ment 12

Fig re B.7 – Con ention for dip le p sition (ξ) an p larization (θ ) 12

Fig re B.8 – Me s rement of hemispherical isotro y with referen e anten a 13

Fig re C.1 – Extru e method of averagin 13

Fig re C.2 – Extra olation of SAR data to the in er s rface of the phantom b sed on

a fourth-order le st s uare p ly omial fit of the me s red data (s uares) 13

Fig re D.1 – Test set up for the syste m ch ck 13

Fig re F.1 – Example referen e co rdinate s stem for the lef ERP of the SAM

phantom 14

Fig re F.2 – Example co rdinate s stem on the device u der test 14

Fig re G.1 – Mec anical detai s of the stan ard dip le 151

Fig re G.2 – Stan ard waveg ide source (dimen ion are ac ordin to Ta le G.2) 15

Fig re H.1 – Dimen ion of the flat phantom set up u ed for derivin the minimal

phantom dimen ion for W an L for a given phantom de th D 15

Fig re H.2 – FDTD predicted u certainty in the 10 g p a sp tial-average SAR as a

fu ction of the dimen ion of the flat phantom comp red with an infinite flat phantom,

at 8 0 MHz 15

Fig re J.1 – Sloted l ne set up 161

Fig re J.2 – An o en-en ed co xial pro e with in er an outer radi a an b,

resp ctively 16

Fig re J.3 – T M l ne dielectric test set up [14 ] 16

Fig re K.1 – SAR values for twelve h p thetical test config ration me s red in the

same freq en y b n an mod lation (e.g GSM 9 0 MHz) u in a h p thetical ful

SAR ( ul SAR) an two fast SAR ( ast SAR 1 an fast SAR 2) evaluation 17

Fig re L.1 – Distribution of "Tit Che k" 19

Fig re L.2 – SAR relative to SAR in p sition with maximum SAR in GSM mode 2 0

Fig re L.3 – Two p ints identifyin the minimum distan e b twe n the p sition of the

interp lated maximum SAR an the p ints at 0,6 × SAR

max 2 1

Fig re L.4 – Histogram for D

min

in the case of GSM 9 0 an iso-level at 0,6 × SAR

max 2 2

Fig re O.1 – Quick g ide flow-c art 214

Ta le 1 – Are s an p rameters 3

Ta le 2 – Zo m s an p rameters 3

Ta le 3 – Example method to determine the combined SAR value u in Alternative 1 4

Ta le 4 – Thres old values TH(f) u ed in this pro osed test red ction protocol 5

Ta le 5 – Example u certainty template an example n merical values for dielectric

Ta le 8 – Un ertainties relatin to the deviation of the p rameters of the stan ard

waveg ide source from the ry 8

Ta le 9 – Other u certainty contribution relatin to the dip le sources des rib d in

An ex G 8

Ta le 10 – Other u certainty contribution relatin to the stan ard waveg ide sources

des rib d in An ex G 8

Ta le 1 – Example of me s rement u certainty evaluation template for han set SAR test 8

Ta le 12 – Example of me s rement u certainty evaluation template for system

v ldato 8

Ta le 13 – Example of me s rement re e ta i ty evaluation template for system

ch ck (a pl ca le for one s stem) 9

Ta le 14 – Me s rement u certainty bu get for relative fast SAR tests 9

Ta le 15 – Me s rement u certainty bu get for system che ck u in fast SAR method 9

Ta le A.1 – Dimen ion u ed in derivin SAM phantom from the ARMY 9 th p rcenti e

male he d data (Gordon et al [5 ]) 10

Ta le A.2 – Ad itional SAM dimen ion comp red with selected dimen ion from the

ARMY 9 th-p rcenti e male he d data (Gordon et al [5 ]) – sp cialst he d

me s rement section 10

Ta le A.3 – Dielectric pro erties of the he d tis ue-eq ivalent l q id 1 2

Ta le B.1 – Un ertainty analy is for tran fer cal bration u in temp rature pro es 1 6

Ta le B.2 – Guidelnes for desig in calbration waveg ides 1 9

Ta le B.3 – Un ertainty analy is of the pro e calbration in waveg ide 12

Ta le B.4 – Un ertainty template for evaluation of referen e anten a gain 12

Ta le B.5 – Un ertainty template for cal bration u in referen e anten a 12

Ta le B.6 – Un ertainty comp nents for pro e cal bration u in thermal method 12

Ta le D.1 – Numerical target SAR values (W/kg) for stan ard dip le an flat phantom 14

Ta le D.2 – Numerical target SAR values for waveg ides sp cified in Clau e G.2

placed in contact with flat phantom [9 ] 14

Ta le G.1 – Mec anical dimen ion of the referen e dip les 15

Ta le G.2 – Mec anical dimen ion of the stan ard waveg ide 15

Ta le H.1 – Parameters u ed for calc lation of referen e SAR values in Ta le D.1 15

Ta le I 1 – Su gested recip s for ac ievin target dielectric p rameters: 3 0 MHz to

9 0 MHz 15

Ta le I 2 – Su gested recip s for ac ievin target dielectric p rameters: 1 4 0 MHz to

2 0 0 MHz 15

Ta le I 3 – Su gested recip s for ac ievin target dielectric p rameters: 2 10 MHz to

5 8 0 MHz 15

Ta le J.1 – Parameters for calc latin the dielectric pro erties of variou referen e

l q id 16

Ta le J.2 – Dielectric pro erties of referen e l q id at 2 °C 16

Ta le K.1 – Me s rement u certainty bu get for relative fast SAR tests complyin with

An ex K req irements, for tests p rformed within one freq en y b n an mod lation 17

Ta le K.2 – Me s rement u certainty bu get for system che ck u in fast SAR

method complyin with An ex K req irements 17

Ta le K.3 – Me s rements con u ted ac ordin to Ste a) 17

Ta le K.4 – Me s rements con u ted ac ordin to Ste b) 18

Ta le K.5 – Me s rements con u ted ac ordin to Ste c) 18

Ta le K.6 – Me s rements con u ted ac ordin to 6.4.2, Ste 2) 181

Ta le K.7 – Me s rements con u ted ac ordin to 6.4.2, Ste 3) 18

Ta le K.8 – Me s rements con u ted ac ordin to 6.4.2, Ste 4) 18

Ta le K.9 – Fast SAR me s rements con u ted ac ordin to Ste a) 18

Ta le K.10 – Fast SAR me s rements s owin hig est SAR value ac ordin to Ste b) 18

Ta le K.1 – Ful SAR me s rements con u ted ac ordin to Ste b) 18

Ta le K.12 – Fast SAR me s rements s owin values ac ordin - o req irements in

Ste c) 18

Ta le K.13 – Ful SAR me s rements con u ted ac ordin to Ste c) 18

Ta le K.14 – Fast SAR me s rements s owin values ac ordin to req irements in

Ste e) 18

Ta le K.15 – Ful SAR me s rements con u ted ac ordin to Ste e) 18

Ta le K.16 – Me s rements con u ted ac ordin to Ste a) 18

Ta le K.17 – Me s rements con u ted ac ordin to Ste b) 18

Ta le K.18 – Me s rements con u ted ac ordin to Ste c) 18

Ta le K.19 – Me s rements con u ted ac ordin to Ste e) 18

Ta le K.2 – Me s rements con u ted ac ordin to Ste f 19

Ta le K.21 – Fast SAR me s rements con u ted ac ordin to Ste a) 191

Ta le K.2 – Ful SAR me s rements con u ted ac ordin to Ste b) 191

Ta le K.2 – Ful SAR me s rements con u ted ac ordin to Ste e) 19

Ta le K.2 – Ful SAR me s rements con u ted ac ordin to Ste e) 19

Ta le L.1 – The n mb r of han sets u ed for the statistical stu y 19

Ta le L.2 – Statistical analy is res lts of P(Ti tChe k > x) for variou x values 19

Ta le L.3 – Statistical analy is res lts of P(Ti tChe k > x) for 1 g an 10 g p a

sp tial-average SAR 19

Ta le L.4 – Statistical analy is res lts of P(Ti tChe k > x) for variou anten a

location 19

Ta le L.5 – Statistical analy is res lts of P(Ti tChe k > x) for variou freq en y b n s 19

Ta le L.6 – Statistical analy is res lts of P(Ti tChe k > x) for variou device typ s 19

Ta le L.7 – Distan e D

min

*

for variou iso-level values 2 2

Ta le L.8 – Exp rimental thres old to have a 9 % pro a i ty that the maximum

me s red SAR value from the are s an wi also have a p a sp tial-average SAR 2 3

Ta le L.9 – SAR values from the are s an (GSM 9 0 b n ) 2 4

Ta le M.1 – SAR res lts ta les for example test res lts – GSM 8 0 2 7

Ta le M.2 – SAR res lts ta le for example test res lts – GSM 9 0 2 8

Ta le M.3 – SAR res lts ta le for example test res lts – GSM 18 0 2 8

Ta le M.4 – SAR res lts ta le for example test res lts – GSM 19 0 2 9

Ta le O.1 – Quick start g ide: SAR evaluation ste s 215

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p te t rig ts IEC sh l n t b h ld resp nsible for id ntifyin a y or al su h p te t rig ts

International Stan ard IEC 6 2 9-1 has b en pre ared by IEC tec nical commit e 10 :

Method for the as es ment of electric, mag etic an electromag etic field as ociated with

h man exp s re

This secon edition can els an re laces the first edition publ s ed in 2 0 This edition

con titutes a tec nical revision

This edition in lu es the fol owin sig ificant tec nical c an es with resp ct to the previou

edition:

a) Exten ion of the freq en y ran e to 3 0 MHz to 6 GHz

c) Test red ction tec niq es.

d) SAR me s rements of terminals with multiple anten as an multiple tran miters

e) Deviation of dielectric c aracteristic of the tis ue-eq ivalent lq id is relaxed up to 10 %

f Un ertainty evaluation g idel nes for temp rature an dielectric p rameter deviation of

tis ue-eq ivalent l q id

g) Ad ition of the fol owin an exes:

• An ex K (informative) Me s rement u certainty of sp cific fast SAR method an fast

SAR examples

• An ex L (informative) SAR test red ction s p ortin information

• An ex M (informative) Ap lyin the he d SAR test proced res

• An ex N (informative) Stu ies for p tential han ef ects on he d SAR

• An ex O (informative) Quick start g ide

The text of this stan ard is b sed on the fol owin doc ments:

Ful information on the votin for the a proval of this stan ard can b fou d in the re ort on

votin in icated in the a ove ta le

This publ cation has b en drafed in ac ordan e with the ISO/IEC Directives, Part 2

In this stan ard, the fol owin print typ s are u ed:

– sp cific test protocols: in ialc typ

A l st of al p rts in the IEC 6 2 9 series, publ s ed u der the general title Me su reme nt

p rocedure for th as es me t of spe cific ab sorp tio rate of hu ma e p sure to radio

fre u e ncy fields from h nd-h ld a d b ody-mounted wirele ss commu nicato de ices, can b

fou d on the IEC we site

Future stan ard in this series wi car y the new general title as cited a ove Titles of existin

stan ard in this series wi b updated at the time of the next edition

The commite has decided that the contents of this publcation wi remain u c an ed u ti

the sta i ty date in icated on the IEC we site u der "htp:/we store.iec.c " in the data

related to the sp cific publ cation At this date, the publ cation wi b

• reconfirmed,

• with rawn,

• re laced by a revised edition, or

• amen ed

IMPORTANT – The 'colour in ide' logo on the cov r pa e of this publ c tion indic te

that it contains colours whic are consid re to be u eful for the cor e t

understa ding of its conte ts Us rs s ould therefore print this doc me t using a

colour printer

IEC TC 10 has the s o e to pre are International Stan ard on me s rement an

calc lation method u ed to as es h man exp s re to electric, mag etic an

electromag etic field IEC TC 10 has develo ed this p rt of IEC 6 2 9 to provide

proced res to evaluate the sp cific a sorption rate (SAR) of h man exp s res d e to

electromag etic field (EMF) tran mit in devices when held close to the e r The typ s of

devices in lu e but are not l mited to mo i e tele hones, cordles tele hones, he dphones,

etc whic are u ed close to the e r The IEC TC 10 stan ard do not de l with the

exp s re l mits Conformity as es ment de en s on the p l c of national reg latory b dies

Whi e b sic restriction on SAR in the ICNIRP Guidel nes [6 ]

1

go up to 10 GHz, the

freq en y ran e for this p rt of IEC 6 2 9 is lmited to an up er en freq en y of 6 GHz sin e

c r ent wireles han sets o erate b low this freq en y

IEC TC 10 an IEEE/ICES TC3

2

work d together formal y throu h common members ip to

ac ieve the go l of harmonization, b twe n IEC TC 10 Maintenan e Te m 1 for this p rt of

IEC 6 2 9 an IEEE/ICES TC3 for IEEE Std 15 8 [6 ] Durin the proces a primary efort

in olved was to harmonize these two stan ard

To aid the u er of this p rt of IEC 6 2 9, a q ick start g ide has b en pre ared an in lu ed

as an informative an ex (se An ex O) The q ick start g ide is not a s bstitute for fol owin

the detai ed proced re of the stan ard

MEASUREMENT PROCEDURE FOR THE ASSESSMENT OF SPECIFIC

This p rt of IEC 6 2 9 sp cifies protocols an test proced res for me s rement of the p a

sp tial-average SAR in u ed in ide a simplfied model of the he d with defined re rod cibi ty

It a pl es to certain electromag etic field (EMF) tran mit in devices that are p sitioned next

to the e r, where the radiatin stru tures of the device are in close proximity to the h man

he d, s c as mo i e phones, cordles phones, certain he d ets, etc These protocols an

test proced res provide a con ervative estimate with l mited u certainty for the p a -sp tial

SAR that would oc ur in the he d for a sig ificant majority of p o le d rin normal u e of these

dev ices The a pl ca le freq en y ran e is from 3 0 MHz to 6 GHz

2 Normative referenc s

The fol owin doc ments, in whole or in p rt, are normatively referen ed in this doc ment an

are in isp n a le for its a pl cation For dated referen es, only the edition cited a pl es For

u dated referen es, the latest edition of the referen ed doc ment (in lu in an

amen ments) a pl es

ISO/IEC 17 4 :2 10, Co formiy as e ssme t – G ene ral re uireme ts for p roficie cy te stn

ISO/IEC 17 2 :2 0 , G en ral re uirem ents for th com pe te ce of testn a d calb rato

lab oratories

3 Terms and definitions

For the purp ses of this doc ment, the fol owin terms an definition a ply

3.1

a ial isotropy

maximum deviation of the SAR me s red when rotatin arou d the major axis of the pro e

whi e it is exp sed to a wave impin in from a direction alon its major axis

tran mitin freq en y ran e as ociated with a sp cific wireles o eratin mode

Note 1 to e try: Th fre u n y b n is usu ly refere to usin ro n e fig res; h we er th a tu l fre u n y

alo atio ma b slg tly difere t, e.g GSM 8 0 MHz b n a tu ly uses 8 4MHz to 8 9 MHz a d 8 9 MHz to

8 4 MHz, GSM9 0 MHz b n a tu ly uses 8 0 MHz to 915 MHz a d 9 5 MHz to 9 0 MHz

3.4

ba ic re triction

h man exp s re l mits for compl an e with time-varyin electric, mag etic, and

electromag etic field me s red in ide the b d that are b sed on esta l s ed ad erse he lth

ef ects

Note 1 to e try: Within th fre u n y ra g of this Sta d rd, th p ysic l q a tity use as a b sic restrictio is

th sp cific a sorptio rate (SA )

3.5

boun ary proximity ef e t

<pro e c an e in the sen itivity of an electric- ield pro e when the pro e tip is located les

than one pro e- ip diameter from media b u daries

Note 1 to e try: This efe t is c use b distortio of th sc tere field at th pro e tip d e to n arb diele tric

p a tom surfa e This efe t c n b c mp nsate for k own pro e orie tatio with resp ct to th p a tom surfa e

Note 1 to e try: Th n mb r of RF c a n ls a d c a n l b n width ma v ry with in ivid al wireles

te h olo ies For th p rp se of this Sta d rd, SA me sureme ts are p rforme o sp cific c a n ls; for

e ample, th hig , mid le a d low c a n ls of th tra smis io b n

3.7

cor elate signals

<in time electromag etic field , as ociated with distin t sig al waveforms, yieldin non-zero

time-domain cor elation integral at some time in tant

Note 1 to e try: For two p wer-lmite field distrib tio s

(,t)

1rF

a d(,t)

2rF

, said inte ral is d fin d as:

21

lm,

212

∞

→

tt

Tt

T

TT

rFrFr

F

wh re r is th lo atio v ctor, th su erscript + re rese ts th c mple c nju ate o eratio a d th

symb l ∙ re rese ts th in er pro u t o eratio

Observ th t two fields are u c relate at lo atio s wh re th y are g ometric ly orth g n l This pro erty d es

n t g n raly h ld at n arb p ints u les th resp ctiv wa eforms are u c relate [6 ]

In c se of sc lar sig als, c relate sig al wa eforms yield a n n-zero time-d main c relatio inte ral at some

time insta t For two p wer-lmite sig als s(t)

1, s (

2, said inte ral is d fin d as:

21

lm

212

∞

→

tsts

Tt

ss

T

TT

(2)

wh re th su erscript + re rese ts th c mple c nju ate o eratio

Note 2 to e try: Two u c relate sig als wo ld fe ture a v nishin c relatio inte ral ie th a o e inte ral is

e u l to zero

Note 3 to e try: Formulas(1) a d (2) are origin ly sp cifie in IEC TR 6 6 0 [6 ]

3.8

de ic hold r

fixture con tru ted of low-los dielectric material that is u ed to hold the device u der test in

the req ired test p sition d rin SAR me s rement

<me s rements> u e of method , proced res an sp cific hardware whic ful y comply with

al of the normative req irements in this Stan ard, ex e t those sp cified in 6.6 an 6.7.4

3.14

ha ds t

<wireles commu ication device han -held device inten ed to b o erated next to the e r,

con istin of an acou tic output or e rphone an an acou tic input or micro hone, an

containin a radio tran miter and receiver

Note 1 to e try: Th terms "mo ie" a d "p rta le" h v sp cific b t g n ric me nin s in IEC 6 0 0 [61] –

mo ie: c p ble of o eratin whie b in mo e (IEV 151-16-4 ) p rta le: c p ble to b c rie b o e p rso

(IEV 151-16-4 ) Th term "p rta le" ofe imples th a i ty to o erate wh n c rie o th user Th se

d finitio s are use interc a g a ly in v rio s wireles re ulatio s a d in ustry sp cific tio s, in some c ses

refer in to ty es of wireles d vic s a d in oth r c ses to inte d d use

3.15

he d mounte de ic

he ds t

device o erated next to the side of the he d con istin of an acou tic output or e rphone an

a micro hone an containin a radio tran miter an receiver held in p sition on or arou d the

e r by mec anical s p ort, e.g arou d the he d A he d mou ted device (he d et is

desig ed to b u ed at the e r but do s not protru e into the pin a or the au itory canal For

al practical purp ses of this Stan ard, it is con idered as a han set as it contain the same

b sic comp nents an p rforms the same b sic fu ction

Note 1 to e try: Wh re th d vic u d r test is a h a mo nte d vic (h a set , th user sh l re d th term

h n set to me n h a mo nte d vic thro g o t this Sta d rd

Note 2 to e try: A h a mo nte d vic th t is inte d d to b use in a wa n t c nsid re for testin b SAM

p a tom e plain d inthisSta d rd is o tsid th sc p of this Sta d rd (e.g e r b d)

3.16

hemispheric l isotropy

maximum deviation of the me s red SAR when rotatin the pro e arou d its major axis with

the pro e exp sed to a referen e wave, havin varyin in iden e an les relative to the axis of

the pro e, in ident from the half sp ce in front of the pro e

3.17

l ne rity er or

maximum deviation of a me s red q antity from the exp cted values defined by a referen e

l ne over the me s rement ran e

Note 1 to e try: Mo ern termin ls ma h v multiple o eratin mo es in orp rate a d th se ma o erate

in ivid aly or multiple mo es ma b simulta e usly a tiv Ex mples of o eratin mo es in lu e GSM, ED E,

EV O, GPRS, C MA, WC MA, Blu to th®, WiFi® a d oth rs

3

Ea h of th se mo es ma h v o e or more

tra smis io b n s as o iate withit

3.2

pe k spatial-a era e SAR

maximum average SAR within a local region b sed on a sp cific averagin volume or mas ,

e.g an 1 g or 10 g of tis ue in the s a e of a c b

Note 1 to e try: SA is e pres e in W/k or e uiv le tly mW/g

Note 2 to e try: In this Sta d rd, th terms p a sp tial-a era e SA (o er 1 g or 10 g) a d th terms 1 g SA

a d 10 g SA are use interc a g a ly

3.21

pe etration depth

<for a given freq en y> de th at whic the electric field (E- ield) stren th of an in ident plane

wave, p netratin into a los y medium, is red ced to 1/e of its value ju t b ne th the s rface

of the los y medium

Note 1 to e try: For a pla e-wa e in id nt n rmaly o a pla ar h lf sp c , th p n tratio d pth δ is giv n in

Formula (3)

21

2

0r0

r0

11

21

′

=

εεωσε

εµ

ω

3.2

pha tom

ph sical model simi ar in a p aran e to the h man anatomy an comprised of material with

electrical pro erties simi ar to the cor esp n in tis ues

Note 1 to e try: A p a tom re rese tin th h ma h a c uld b a simple sp eric l mo el or a more c mple

Blu to th is th tra emark of a pro u t su ple b th Blu to th SIG WiFi is th tra emark of a pro u t

su ple b Wi-Fi Al a c This informatio is giv n for th c n e ie c of users of this d c me t a d d es n t

c nstitute a e d rseme t b IEC of th pro u ts n me Eq iv le t pro u ts ma b use if th y c n b

sh wn tole dto th same results

pus -to-talk de ic

han -held radio tran ceiver in whic a u er o erates a switc to tog le b twe n radio

tran mis ion an rece tion (simplex o eratin mode)

EX MPLE A two-wa ra io

3.2

pro e isotropy

degre to whic the resp n e of an electric field or mag etic field pro e is in e en ent of the

p larization an direction of pro agation of the in ident wave

3.2

re dout ele tronic

me s rement s stem comp nent that con ects to the E- ield pro e an provides an

analog e- o-digital con ersion of the me s red values to the p st proces or of the

<of a me s rement s stem> ratio of the mag itu e of the s stem resp n e (e.g voltage) to

the mag itu e of the q antity b in me s red (e.g electric field stren th s uared)

3.3

spe ific absorption rate

SAR

The SAR in the tis ue-eq ivalent l q id can b determined by the rate of temp rature in re se

or by E- ield me s rements, ac ordin to Formulas (4) or (5):

ρσ2

E

0h

dd

=

=

ttT

cSA

(5)

where

SAR is the sp cific a sorption rate in W/kg;

E is the rms value of the electric field stren th in the tis ue medium in V/m;

σ is the electrical con u tivity of the tis ue medium in S/m;

3.31 Unc rtainty

3.31.1

sta d rd unc rtainty

estimated stan ard deviation of a me s rement res lt, eq al to the p sitive s uare ro t of the

estimated varian e

3.31.2

combin d u c rtainty

estimated stan ard deviation of the me s rement res lt o tained by combinin the in ivid al

stan ard u certainties of b th Typ A an Typ B evaluation u in the u ual " o t s m

-s uares" method of combinin stan ard deviation whic were o tained by ta in the p sitive

s uare ro t of the estimated varian es

3.31.3

e pa d d unc rtainty

q antity definin an interval a out the res lt of a me s rement that is exp cted to en omp s

a distribution of values within a defined confiden e interval that could re sona ly b atributed

The international y ac e ted SI u its are u ed throu hout the Stan ard

α

c

h

Sp cific h at c p city jo le p r kio ram p r k lvin J/k K)

NOT In this Sta d rd, temp rature is q a tifie in d gre s Celsius, as d fin d b : T ( °C) =T (K) − 2 3,15

GSM glo al s stem for mo i e commu ication

GPRS general p ck t radio service

EDGE en an ed data rates for GSM evolution

TDMA time division multiple ac es

CDMA code division multiple ac es

WCDMA wide an code division multiple ac es

OFDM orthogonal freq en y-division multiplexin

DCS digital cel ular service

PCS p rsonal commu ication service

UMTS u iversal mo i e telecommu ication s stem

WiMax worldwide intero era i ty for microwave ac es

A SAR me s rement s stem con ists of the SAM phantom (a h man he d model) fi ed with

tis ue-eq ivalent l q id, electronic me s rement in trumentation, a s an in s stem an a

DUT holder

SAR s al b me s red u in a miniature pro e that is automatical y p sitioned to me s re

the internal E- ield distribution in the SAM phantom re resentin the h man he d exp sed to

electromag etic field prod ced by the DUT The phantom he d is fi ed with the req ired

This lq id s al b of low vis osity to al ow fre movement of the pro e within it From the

me s red E- ield values, the SAR distribution an the p a sp tial-average SAR value s al

b calc lated

The tests s al b p rformed in a la oratory conformin to the fol owin en ironmental

con ition

a) Both the ambient an tis ue-eq ivalent lq id temp ratures s al b in the ran e of 18 °C

to 2 °C, in lu ive; se 7.2.6.6 to determine the l q id temp rature u certainty

b) Prior to tis ue-eq ivalent l q id dielectric pro erties me s rement an SAR

me s rements, the DUT, test eq ipment, l q id an phantom s al have b en k pt in the

la oratory lon enou h for their temp ratures to have sta i zed (i.e they s al not have

b en recently moved from another are with a dif erent ambient temp rature, s c as a

refrigerator or storage are )

c) The temp rature of the l q id d rin the SAR me s rements s al b within 2 °C (or a

temp rature diferen e cor esp n in to a 5 % c an e in either ε′ or σ if this is smal er) of

that at whic the dielectric pro erties were me s red If the temp rature c an e ex e d

this value, the dielectric pro erties s al b re-me s red Se 7.2.6.6 to determine the

l q id temp rature sen itivity u certainty

d) The ef ect of reflection from ca les, test eq ipment, or other reflectors s al b

determined by the SAR system ch ck proced re des rib d in Clau e D.2, with an without

the reflectors present or where neces ary with the ju iciou placement of a sorbin

materials an /or the u e of fer ite b ad on ca les

e) SAR me s rements of test devices s al only b p rformed when the ef ects of reflection ,

secon ary RF tran mit ers, etc res lt in a p a sp tial-average SAR ( or 1 g or 10 g

mas , whic ever is a pl ca le to the test les than 0,012 W/kg by me s rin the p a

sp tial-average SAR at (a proximately) 0,4 W/kg (u ed to esta l s the 3 % low detection

l mit, se 7.2.9) When the ef ect of ca les an reflectors is more than 0,012 W/kg, fer ite

b ad , RF a sorb rs an other mitigation tec niq es s al b a pl ed to red ce the SAR

er or If the precedin l mit can ot b ac ieved, a value hig er than 3 % (0,012 W/kg)

s al b con idered in the u certainty bu get in the "RF ambient con ition – reflection "

row of a pl ca le ta les, provided it can b demon trated that the SAR contribution d e to

reflection determined by the system che ck proced re is les than 10 % of the SAR

me s red for the test device The req irement on reflection s al b verified at le st

every ye r or whenever the system che ck s ows u exp cted res lts

Durin testin the DUT s al not b con ected to an wireles network ex e t a b se station

simulator in the la

System v ldato ac ordin to the protocol defined in Clau e D.3 s al b done at le st on e

p r ye r, ad itional y when a new s stem is put into o eration an whenever modification

have b en made to the s stem, s c as a new sofware version, diferent typ or version of

re dout electronic or diferent pro es The stan ard sources u ed for system v ldato s al

b desig ed an val dated to me t the req irements sp cified in An ex D Ad itional sources

for dip les an wave g ides at sp cific freq en ies not c r ently in lu ed in Ta les D.1, D.2,

G.1 an G.2 may b u ed as stan ard sources provided they me t the req irements sp cified

in D.3.6 an An ex G

The me s rement s stem s al b val dated as a complete s stem Cal bration of the pro e

se arately from the s stem is al owed, provided that the electrical interface c aracteristic

b twe n the pro e an re dout electronic are sp cified an implemented d rin

me s rements The pro e(s) s al b calbrated together with an identical ampl fier,

me s rement device an data ac uisition s stem The pro e s al b calbrated in a tis u

e-eq ivalent lq id at the a pro riate o eratin freq en y an temp rature ran e, ac ordin to

the methodolog des rib d in An ex B

The lower detection l mit s al b les than or eq al to 0,01 W/kg, an the maximum detection

l mit s al b hig er than 10 W/kg The pro e sen itivity an isotro y s al b determined in

diameter of the pro e tip s al not ex e d 8 mm in the vicinity of the me s rement elements

for freq en ies up to an in lu in 2 GHz For freq en ies a ove 2 GHz, the pro e tip

diameter s al not ex e d l/3, where l is the wavelen th in the lq id The prob tip diameter

may b larger if it can b s own that sp cific req irements are met

A larger pro e diameter is ac e ta le if it can b demon trated that the E- ield from an

p tential field distribution can b me s red with an u certainty of les than ±15 % (k = 2) at

the distan es from the s rface of phantom, as lsted in Ta le 1 or at the distan es

recommen ed by the dosimetric s stem man facturer (whic ever is les ) The methodolog of

how to determine this u certainty is not p rt of this Stan ard an s al b develo ed by the

u er Without s c an u certainty methodolog this may not b ac e ta le by national

authorities

Where this Stan ard expl citly sp cifies p rforman e c aracteristic for the me s rement

s stem or a p rt of the me s rement s stem, the man facturer of the s stem or of the p rt, or

the s stem integrator s al doc ment the conformity with the provision of this Stan ard

5.2 Pha tom spe ific tions (s el a d l q id)

This Stan ard provides test proced res for a sagit aly-bisected SAM phantom oriented

horizontal y only For the typical set up of a sagit al y-bisected phantom, e c half of the he d

model is placed on its side, an the DUT is placed u derne th Phantoms that can ot u e the

proced res in this doc ment are outside the s o e of this Stan ard

The phantom s al b fi ed with he d tis ue-eq ivalent lq id with the req ired dielectric

pro erties

To minimize reflection from the up er s rface of the tis ue-eq ivalent l q id, the de th of the

l q id s ould b at le st 15 cm, whic is a proximately the distan e b twe n the e rs of a

typical h man he d Liq id de th of les than 15 cm may b u ed only if it is demon trated

(e.g u in n merical simulation ) that the efect on p a sp tial-average SAR is les than

1 % u der worst case con ition If it is more than 1 % but les than 3 %, u certainty for the

worst case value from the demon tration s al b ad ed to the u certainty bu get

The dielectric p rameters s al b evaluated an comp red with the values given in Ta le A.3

u in l ne r interp lation This me s rement can b p rformed u in the eq ipment an

proced res des rib d in An ex J The me s red dielectric pro erties, not the values of

Ta le A.3, s al b u ed in the SAR calc lation

NOT Se 6.2.1 for th alowa le v riatio s b twe n th me sure a d th Ta le A.3 diele tric p rameters, as

d fin d for th p rp ses of this Sta d rd

At le st thre referen e p ints s al b defined on the phantom by the phantom man facturer

for u e in alg in the s an in s stem with the phantom These p ints s al b visible to the

u er, en losin at le st 8 % of the phantom to s rface an e c p int b in at le st 2 cm

a art Sp cification for the phantom an he d tis ue simulant l q id are given in An ex A

The rationale for c o sin the sp cific he d phantom model (i.e SAM) des rib d in this

Stan ard is b sed on the fol owin criteria

a) The p a sp tial-average SAR s al b a con ervative estimate of the actual value

exp cted to oc ur in the he d of a sig ificant majority of p rson , regardles of age,

gen er an eth icity, d rin the inten ed u e of wireles han sets

b) The test res lts s al not u neces ari y overestimate the p a SAR exp cted in actual

u ers

c) The phantom s al al ow sta le an re e ta le device p sitionin for p a sp tial-average

SAR me s rements an b ef ective for verifyin re e ta i ty an re rod cibi ty

demon trated by inter-la oratory comp rison

e) The phantom s al s p ort these criteria for contemp rary an future han set desig s an

b u biased with resp ct to an p rtic lar han set desig or s a e

Based on the c r ently avai a le s ien e, lterature, an exp rien e, the desig of a phantom

that me ts the a ove criteria, esp cial y item a), i.e providin a con ervative estimate of the

actual SAR, is a fu ction of at le st the fol owin p rameters:

1) he d size an s a e of the SAM phantom s el ;

2) dielectric p rameters an homogeneity of tis ue-eq ivalent lq id an phantom s el ;

3) e r pin a/auricle size, s a e, location an material pro erties;

4) ex lu ion of the han for me s rin SAR in the he d (se An ex N)

5.3 Ha d a d de ic holder consideration

Durin normal o eration, the he d an han are in the ne r- ield of the DUT when u ed next

to the e r an hen e b th a sorb energ For extremities s c as the han , a hig er SAR

l mit is al owed, i.e 4 W/kg averaged over 10 g of tis ue in ICNIRP RF exp s re g idelnes

[6 ] an IEEE Std C9 1-2 0 [6 ] Numerical an exp rimental stu ies have s own that the

SAR in the han at the p wer levels u ed by han sets is not exp cted to ex e d those lmits

(Fran avi a et al [4 ] Gan hi et al [5 ] Jen en an Rahmat Sami [6 ] [7 ] Ku ter et al

[8 ] Watana e et al [14 ]) Furthermore, a practical phantom for SAR me s rement in the

han is c r ently u avaia le Therefore, SAR me s rement in the han is not ad res ed in

this Stan ard

The influen e of a han holdin a han set to the he d d rin SAR me s rements was

con idered in IEEE Std 15 8-2 13 [6 ] Earl er work by Balzano et al [2] an Ku ter et al [8 ]

re orted that the presen e of the han either decre sed or had no sig ificant ef ect on the

he d SAR, althou h n merical res lts by Meyer et al in 2 01 [10 ] s owed a case with 7 %

in re se in he d SAR d e to the han These deviation in he d SAR were con lu ed to b

within the con ervativenes provided by the SAM phantom Based on these stu ies, the

ex lu ion of the han from test proced res would le d to he d SAR overestimation in the

majority of situation , as confirmed by more recent rese rc res lts [4] [5] [7 ] on han set

SAR levels For these re son , han models are not con idered in this Stan ard

The state of dosimetric rese rc on the efect of the han on he d SAR prod ced by han sets

is des rib d in An ex N This rese rc s ows that there are cases when the SAR prod ced

by han sets in the SAM phantom may in re se as wel as decre se sig ificantly d e to the

han holdin the han set, for sp cific han set desig s, o eratin b n s an han grips

These initial fin in s have s own that the SAM phantom alone may sti overestimate he d

SAR in a statistical y sig ificant n mb r of cases comp red to when the han is present for

the me s rement Nevertheles they deserve further in estigation , whic may p tential y

war ant future c an es in this recommen ed practice

5.4 Sc n in s stem re uireme ts

The SAR pro e s an in s stem s al b a le to s an the req ired me s rement region of

the SAM phantom that are within the projection of a DUT in order to evaluate the thre

-dimen ional SAR distribution The toleran e of the pro e tip p sitionin at a me s rement

p int s al b ≤ 0,2 mm The p sitionin resolution s al b ≤ 1 mm The pro e p sitionin

ac urac of the s an in s stem req ires the phantom referen e p ints defined by the

phantom man facturer to b verified

5.5 De ic holder spe ific tion

The device holder s al p rmit the DUT to b p sitioned ac ordin to the definition given in

6.2.4 It s al b made of low-los an low-p rmit ivity material(s): los tan ent ≤ 0,05 an

relative p rmitivity ≤ 5

In coupl n the DUT to the phantom, the device holder s ould provide the minimum amou t of

contact to the DUT to give a sec re hold an maintain the req ired p sition d rin the

me s rement The device holder s ould aid the o erator to p sition the DUT re e ta ly In

cases where a default relative p sitionin can ot b ac ieved, e.g d e to the device holder

interaction with buton an sen ors on the DUT, then minimal p sition of sets in a predefined

direction s ould b a pl ed to ac ieve the req ired DUT test p sition

The p sitionin u certainties s al b estimated fol owin the proced res des rib d in 7.2.5

To verify that the device holder do s not p rturb SAR, a s bstitution test s al b done by

s p ortin the test han set with low relative p rmit ivity an low-los fo m blocks, again t a

flat phantom (se 7.2.5.2)

5.6 Ch ra teristic of the re dout ele tronic

The pro e output is proces ed by the re dout electronic an as ociated in trumentation that

combine the voltages from the pro e’s sen ors to provide an output that is pro ortional to the

ampl tu e-s uared of the E- ield in ident on the sen ors Detector diodes at the dip le fe d

p int are u ed to rectify the sen or voltages The rectified sig als are tran mited throu h

resistive (RF- ran p rent l nes to the re dout electronic s stem For a contin ou -wave

sig al at low field strength levels, the pro e output is pro ortional to the s uare of the

ampl tu e of the in ident E- ield; at hig er sig al levels (a ove the diode compres ion p int ,

the output is not l ne rly pro ortional to |E |

2

, but b comes pro ortional to |E | This sig al

compres ion wi le d to an u derestimation of the actual SAR at hig field stren th con ition

if it is not comp n ated cor ectly throu h pro e cal bration Also ampl fiers in the re dout

electronic can deviate from an ide l l ne r resp n e an introd ce ad itional u certainty

For u certainties as ociated with the pro e re dout electronic , se 7.2.2.6

6 Protocol for SAR as essme t

Al me s rements s ould b car ied out with go d la oratory practice, e.g in ac ordan e with

ISO/IEC 17 2 or an other local an national req irements for device certification This

Stan ard do s not contain information ne ded to config re wireles han sets for sp cific

wireles tec nologies, in lu in sp cific set in s s c as the o eratin mode or data rate to

en ure that the maximum SAR is o tained

6.2 Me s reme t preparation

6.2.1 Preparation of tis ue-e uiv le t l quid a d s ys te m c he c k

The dielectric pro erties of the tis ue-eq ivalent l q id s al b me s red within 2 h b fore

the SAR me s rements an every two day of contin ou u e L s freq ent dielectric

me s rements are ac e ta le if the la oratory can doc ment compl an e with Ta le A.3 an

the req irements of 5.2 u in me s rement intervals up to but not gre ter than one we k If

the han set test series ta es lon er than 4 h, the l q id p rameters s al also b me s red

at the en of the han set test series

Tis ue eq ivalent l q id s al yield me s red relative p rmitivity an con u tivity values

within ±10 % of the target values at freq en ies at whic the SAR is me s red, when 7.2.7.2

is u ed to cor ect me s red SAR for the deviation in p rmit ivity an con u tivity; otherwise,

the relative p rmit ivity an con u tivity s al b within ± % If the cor ection for the deviation

of the dielectric p rameters (se 7.2.7) is a pl ed, it s al b within ±10 %

A system ch ck ac ordin to the proced res of An ex D s al b completed within 2 h b fore

p rformin SAR me s rements for a DUT The purp se of the system ch ck is to verify that

test of re e ta i ty with a cal brated source to en ure that the s stem works cor ectly d rin

the compl an e test The system ch ck s al b p rformed in order to detect p s ible drif

over s ort time p riod an other u certainties in the s stem, s c as:

a) u ac e ta le c an es in the lq id p rameters, e.g d e to water eva oration or

temp rature c an es;

b) comp nent fai ures;

c) comp nent drif ;

d) o erator er ors in the set up or the sof ware p rameters;

e) ad erse en ironmental con ition for the s stem, e.g RF interferen e

The system ch ck proced re s al b p rformed on the same SAR me s rement s stem, with

the same SAR pro e(s) an tis ue-eq ivalent lq id as the SAR evaluation of the device for

e c freq en y b n tested

6.2.2 Preparation of the wirele s de ic un er te t (DUT)

The anten a(s), b t ery an ac es ories s al b those sp cified by the man facturer, an

doc mented in the me s rement re ort The b tery s al b ful y c arged b fore e c

me s rement, without external con ection or ca les

For 3G/4G tec nologies, the RF output p wer an freq en y (c an el) s al b control ed by

a wireles l nk to a b se station or network simulator For WLAN, Blueto th, WiMax, etc test

sof ware an internal test codes are generaly u ed

If tests are p rformed u in prototyp s, it s al b verified that the commercial version has

exactly the same mec anical an electrical c aracteristic as the tested prototyp If this

can ot b g arante d, testin s al b re e ted by sampl n of u modified commercial

prod ct version

The DUT s al b set to tran mit at the hig est time-averaged maximum output p wer level

for con ition of u e next to the e r The test s al b p rformed at a maximum p wer level

con istent with tu e-up sp cification an prod ction variation The me s red SAR s al be

s aled to the hig est time-averaged maximum output p wer al owed for prod ct u its The

s aln s al b doc mented in the test re ort The maximum time-averaged p wer levels of

the DUT s al b verified, e.g by con u ted p wer tests with a ful y c arged b tery to

s p ort the s al n Check for the p s ibi ty of SAR variation oc ur in over the course of

the SAR me s rement

For certain noise-l k digital y mod lated sig als (se 6.2.3.4) the time-averaged maximum

output p wer may vary in diferent o eratin modes ac ordin to sig al b n width,

mod lation s heme, p a - o-average p wer ratio an data rate These con ition req ire

careful selection of device config ration for SAR me s rement When time division d plex

(TDD) s heme is u ed, the upl nk an downl nk sig als are tran mited at the same freq en y;

typical y in ran om orders with non-p riodic d ty factors It is imp rtant that these factors are

con idered for s c wireles tec nologies to en ure SAR is me s red cor ectly For example,

the output p wer of IEEE Std 8 2.1 (Wi-Fi/WLAN) devices d rin SAR me s rement is

typical y set by test sof ware to the maximum level for the cor esp n in mod lation an data

rate The test sofware also config res the device to tran mit with a fixed p riodic d ty factor

to ena le the SAR to b me s red cor ectly The me s red SAR may ne d to b s aled to a

hig er tran mis ion d ty factor cor esp n in to the maximum exp s re exp cted d rin

actual u e For han sets with Wi-Fi fu ctional ty, the lowest order mod lation is typical y

exp cted to have the lowest p a - o-average p wer ratio an typical y has hig est maximum

average output p wer; therefore, when a pro riate, the lowest order mod lation s al b

tested to en ure con ervativenes an to avoid SAR me s rement er ors d e to hig p a -

o-average p wer ratios Ad itional me s rement an pro e cal bration con ideration may b

req ired for IEEE Std 8 2.1 ac 16 MHz c an els

6.2.3 Operating mode

6.2.3.1 Ge eral

The wireles tec nologies u ed by the DUT wi determine the o eratin mode an typ of

sig als ( req en y, mod lation s heme, output p wer, etc.) u ed in the SAR tests Al

a pl ca le o eratin modes inten ed for device u e next to the e r s al b con idered for

testin Subclau e 6.7.2 provides a test red ction proced re for modes o eratin in the same

tec nolog an freq en y b n The sig al c aracteristic of o eratin modes can b

des rib d by 6.2.3.2 to 6.2.3.4 For devices that do not o erate with a p riodic d ty factor,

sp cial test sofware or eq ipment is general y req ired to config re the DUT to tran mit with

a maximum p riodic d ty factor b fore con u tin the SAR me s rement

6.2.3.2 Consta t-e v lope operating mode (a alogue modulation )

A DUT o eratin in modes where the en elo e of the sig al in the time domain is con tant,

e.g freq en y division multiple ac es (FDMA) modes, s al b tested with a CW-eq ivalent

(car ier) sig al u in test codes or a b se-station simulator

6.2.3.3 TDMA (puls -e v lope) operating mode

A DUT o eratin in TDMA mode may tran mit voice an data u in diferent n mb r of slots

De en in on the data rate, data o eratin modes u in hig er order mod lation may

o erate at red ced output p wer to ac ommodate hig er p a - o-average p wer ratios; for

example, EDGE If data op ratin modes are o erational d rin voice cal s, s c as in certain

GSM/GPRS/EDGE d al tran fer o eratin mode config ration , the n mb r of time slots an

the hig est output p wer for b th voice an data s al b th b con idered in config rin the

simultane u tran mis ion con ition for testin SAR next to the e r

If it is not fe sible to config re the device to o erate at its maximum time-averaged output

p wer in multi-slot con ition for voice an /or data d e to test eq ipment l mitation , the test

s al b p rformed in sin le-slot o eratin mode provided the res lts are s aled to the

maximum n mb r of slots that can b tran mited An dif eren e in maximum output p wer

b twe n sin le slot an multi-slot con ition s al also b ac ou ted for in the s aln It s al

b demon trated that SAR s al n is either l ne r or sl g tly les than lne r with resp ct to

output p wer an the relative SAR distribution is in e en ent of output p wer The

relation hip b twe n SAR an output p wer s al b doc mented in the SAR test re ort

ac ordin to the p wer s al n proced re in 6.2.3.5

6.2.3.4 Digital operating mode with ra dom ampl tud a d pha e modulation

For a DUT in o eratin modes that employ spre d sp ctrum CDMA, orthogonal freq en

y-division multiplexin (OFDM) or other mod lation s hemes where the en elo e of the sig al

varies ran omly with time, the output p wer general y varies b cau e of c an in p a -

o-average p wer ratios d e to data rate an other tec nolog -sp cific o eratin p rameters an

con ition The tests s al b p rformed at a time-averaged maximum output p wer level

s p orted by the DUT an , when a pl ca le, with a fixed p riodic tran mis ion d ty factor, for

example TDD s stems In some cases, the DUT may not b a le to s stain the maximum

average p wer for lon d ration d e to p a - o-average an other desig req irements

Care s al b ta en to en ure the tran mit er is config red to o erate at an ac e ta le tim

e-averaged output p wer level as al owed by the DUT an to s ale the me s red SAR to the

req ired hig est time-averaged output level Information on CDMA IS-9 , in lu in pro e

l ne rity comp n ation, has b en publs ed by Di Nal o an Fara ne [2 ] Further information

for WCDMA, LTE, etc was recently re orted by Nada u uti et.al [1 6]

6.2.3.5 SAR s al n proc dure for power or sig al v riation

SAR s al n is the extra olation of the SAR of a DUT determined with a test sig al (mod

X) to

a SAR of the same device in the same exp s re test p sition an freq en y c an el with a

dif erent sig al (mod

Y) The diferen e can b in the p wer level, mod lation, or b th The

me s rin the average p wer for b th or by n merical integration of the p wer en elo e if the

sig als are s f iciently wel known SAR s aln is p s ible if the fol owin p ints are satisfied

a) The same RF ampl fier stage is u ed for mod

X

Y

e-output or other anten a diversity tec niq es are a pl ed

c) The pro e mod lation resp n e u certainty has b en evaluated for the mod lated sig al

mod

X

(se 7.2.2.4) an the SAR has b en determined for mod

X

d) The time-averaged RF output p wer ratio (R

p) of mod

mod

modmax,

p

PP

(6)

where

Ymodmax,

P

cor esp n s to the hig est time-averaged output p wer set in If the two

sig als dif er in mod lation, then the test sig al wi b set at maximum time-averaged

output p wer:

XX

modmax,mod

s al be determined by exp rimental me n (e.g me s rement u in an

average p wer meter)

e) The RF car ier freq en y of mod

X

is the same as for mod

Y

f The RF sig al b n width ratio (R ) of mod

X

Ysatisfies Formula (7):

%3

101

XY

momo

If the a ove req irements are fulfi ed a s al n of the SAR from mod

mop

mo

SAR

If the a pro c in this s bclau e is u ed, it s al b stated in the me s rement re ort that

p ints a) to g) are satisfied

For han sets s p ortin pu h- o- alk modes o erated next to the e r, the maximum d ty

factor s al b de med to b 0,5 b sed on 5 % talk an 5 % lsten

6.2.4 Positioning of the DUT in relation to th pha tom

6.2.4.1 Ge eral

This stan ard sp cifies two han set test p sition again t the he d phantom – the "c e k"

p sition an the "ti t" p sition These two test p sition are defined in 6.2.4.2 an 6.2.4.3,

resp ctively The DUT s al b tested in b th of these p sition on the lef an rig t sides of

the SAM phantom In some cases (e.g as mmetric han sets) the DUT p sitionin proced res

re resentin inten ed u e con ition (se 6.2.4.2 an 6.2.4.3) can ot b u ed In this event,

alternative al g ment proced res s al b ada ted with al detai s provided in the test re ort

These alternative proced res s al re lcate inten ed u e con ition as closely as p s ible,

ac ordin to the intent of the proced res des rib d in 6.2.4.2 an 6.2.4.3

For other form factors as ociated with he d mou ted devices (u ed at the e r but not

protru in into the pin a or the au itory canal), the p sition an orientation u ed for

as es ment s al al g as closely as p s ible with those defined for han sets in 6.2.4.2 an

6.2.4.3 Con ideration for the inten ed u e orientation s al also b given Se also 6.2.4.6

Where the he d mou ted device contain an acou tic output an acou tic input, then these

s al b alg ed to the ERP an M referen e p ints, resp ctively

Cle r detais of the actual test p sition u ed s al b ful y doc mented in the test re ort

6.2.4.2 Definition of the c e k p sition

The c e k p sition is esta l s ed in p ints a) to i) as fol ows

a) Config re the DUT for talk o eration, if neces ary For example, for a DUT with a fl p,

swivel or sl de cover piece, o en the cover if this is con istent with talk o eration If the

DUT can also b u ed with the cover closed, b th config ration s al b tested

b) Define two imaginary lnes on the DUT, the vertical centrel ne an the horizontal lne, for

the DUT in vertical orientation as s own in Fig re 1 The vertical centrelne p s es

throu h two p ints on the front side of the DUT: the midp int of the width w

at the b t om of the han set (Point B) The horizontal l ne is p rp n ic lar to the

vertical centrel ne an p s es throu h the centre of the acou tic output (se Fig re 2)

The two l nes intersect at Point A Note that for man han sets, Point A coin ides with the

centre of the acou tic output However, the acou tic output may b located elsewhere on

the horizontal l ne Also note that the vertical centrel ne is not neces ari y p ral el to the

front face of the DUT, esp cial y for clam-s el han sets, han sets with fl p cover pieces,

an other ir eg larly s a ed han sets

c) Position the DUT close to the s rface of the phantom s c that Point A is on the (virtual)

exten ion of the l ne p s in throu h Points RE (rig t e r) an LE (lef e r) on the

phantom (se Fig re 2 an Fig re 2 ) The plane defined by the vertical centrel ne an

the horizontal lne of the DUT s al b p ral el to the sagit al plane of the phantom

d) Tran late the DUT toward the phantom alon the l ne p s in throu h RE an LE u ti

the han set tou hes the e r (se Fig re 2c)

e) Rotate the DUT arou d the (virtual) LE-RE l ne u ti the DUT vertical centrel ne is in the

referen e plane (se Fig re 2d)

f Rotate the DUT arou d its vertical centrel ne u ti the plane defined by the DUT vertical

centrel ne an horizontal lne is p ral el to the N-F l ne, an then tran late the DUT

toward the phantom along the LE-RE l ne u ti DUT Point A tou hes the e r at the ERP

(e r referen e p int (se Fig re 2 )

g) Whi e k e in Point A on the lne p s in throu h RE an LE an maintainin the DUT in

contact with the pin a, rotate the han set a out the l ne N-F u ti an p int on the DUT is

in contact with a phantom p int b low the pin a (c e k) (se Fig re 2f The ph sical

an les of rotation s al b doc mented

h) Whi e k e in DUT Point A in contact with the ERP, rotate the han set arou d a l ne

p rp n ic lar to the plane defined by the DUT vertical centrel ne an horizontal l ne an

p s in throu h DUT Point A, u ti the DUT vertical centrel ne is in the referen e plane

(se Fig re 2g)

i) Verify that the c e k p sition is cor ect as fol ows:

• the N-F l ne is in the plane defined by the DUT vertical centrel ne an horizontal l ne;

• DUT Point A tou hes the pin a at the ERP;

• the DUT vertical centrelne is in the referen e plane

Fig re 1 – Vertic l a d horizontal refere c l ne a d refere c

Points A, B on two e ample de ic type : a ful touc s re n

smart phon ( op) a d a k yb ard ha d et (bot om)

w

t/2

w

b/2 w

b/2

w

t/2

B

w

b/2 w

b/2

Botom of h n set

IEC

NOT Th refere c p ints for th rig t e r (RE), lef e r (LE), a d mo th (M), whic esta lsh th Refere c

Pla e for h n set p sitio in , are in ic te This d vic p sitio sh l b maintain d for th sa ital p a tom test

set u sh wn in Fig re A.4

Fig re 2 – Pho e p sitio 1 – c e k p sitio

Fig re 2b – One p s ibleDUT p sitio a ainst th h ad aferStep c)

NOT Th bla k arows sh w th dire tio of tra slatio of th D T for Ste d)

Fig re 2 – Han s t p sitio of Fig re 2b afer ap lying Step d)

IEC IEC

IEC

NOT Th c rv d bla k arowssh w th dire tio of rotatio of th D T for Ste e).

NOT Th c rv d bla k arowssh w th dire tio of rotatio of th D T for Ste h).

Fig re 2 – Han s t p sitio of Fig re 2f afer ap lying Step h)

Fig re 2 – Che k position of the wirele s de ic on the lef side of SAM

where the de ic s al be maintaine for the ph ntom te t s t-up

6.2.4.3 Definition of the ti t p sition

The tit p sition is esta ls ed in p ints a) to d) as fol ows

a) Re e t Ste s a) to i) of 6.2.4.2 to place the DUT in the c e k p sition (se Fig re 2)

b) Whi e maintainin the orientation of the DUT, move the DUT away from the pin a alon

the l ne p s in throu h RE an LE far enou h to al ow a rotation of the han set away

from the c e k by 15°

c) Rotate the DUT arou d the horizontal l ne by 15° (se Fig re 3)

d) Whi e maintainin the orientation of the DUT, move the DUT toward the phantom on a

l ne p s in throu h RE an LE u ti an p rt of the DUT tou hes the e r The ti t p sition

is o tained when the contact is on the pin a If the contact is at an location other than

the pin a, e.g exten ed anten a on the b ck of the phantom he d, the an le of the DUT

s al b red ced In this case, the ti t p sition is o tained if an p rt of the DUT is in

contact with the pin a an a secon p rt of the DUT is in contact with the phantom,

This d vic p sitio sh l b maintain dfor th p a tom test set u

Figure 3 – Ti t position of the wirele s d vic on th lef side of SAM

IEC IEC

6.2.4.4 Ante n

For devices that employ one or more external anten as with varia le p sition (e.g anten a

exten ed, retracted, rotated), these s al b p sitioned in ac ordan e with the u er

in tru tion provided by the man facturer If no inten ed anten a p sition is sp cified, tests

s al b p rformed with the anten a(s) oriented to o tain the hig est exp s re con ition whi e

sti maintainin the device in the c e k an ti t p sition of 6.2.4.2 an 6.2.4.3 For anten as

that can b exten ed, testin s al b p rformed with the anten a ful y exten ed an fuly

retracted The anten a config ration s al b doc mented in the me s rement re ort

Tran mit diversity anten as are tested in e en ently for SAR

6.2.4.5 Options a d a c s orie s ppl e by th DUT ma ufa turer

Other ac es ories that may afect the RF output p wer or RF c r ent distribution of the DUT

when u ed next to the e r s al b tested ac ordin to the inten ed u e con ition sp cified

by the man facturer For example, (a) o tional anten as, (b) o tional b t ery p cks that

c an e the han set p rforman e or SAR, etc an (c) wires con ected d rin inten ed u e

NFC or wireles c argin o tion general y do not req ire SAR me s rement but their

influen e on the SAR of other tran miters may need to b con idered

6.2.4.6 DUTs with alternativ form fa tor

For the purp se of this Stan ard the DUT is con idered to b a con entional b r typ

(rectan ular, c b id) form factor However the b sic prin iples defined an sp cified here

may b a pl ed to other form factors for other devices covered by the s o e of this Stan ard

One s c device is a wireles he d et (e.g con ected by Blueto th), whic can b evaluated

in the same man er as an other DUT in this Stan ard by a plyin a simi ar ge metry an

co rdinate ma pin from this device to the DUT definition provided in Fig re 4

Figure 4 – An alternativ form fa tor DUT a d sta dard coordin te

a d refere c points appl e

The b sic fe tures of an device that alow for e s ma pin to the ge metry an co rdinate

s stem in u e in this Stan ard in lu e the identification of an acou tic output p int that wi b

defined as p int A when at the mid-p int of the width of the device an a p int B that wi b at

the b tom of the device, where the primary micro hone location is at the en ne rest to the

mouth

Other con ideration that s al b made here are the o eratin modes avai a le in s c a

device an the maximum o eratin p wer levels that a ply

Al detai s relatin to alternative form factor DUTs s al b fuly doc mented in the

me s rement re ort, in lu in diagrams or photogra h that would aid the des ription Sou d

en ine rin practice s al b a pl ed to implement the ma pin of an alternate form factor

device

IEC

6.2.5 Te t fre ue cie for DUT

A DUT s al b compl ant with a pl ca le exp s re stan ard at al tran mit in freq en ies

However, testin at every c an el is impractical an u neces ary The purp se of 6.2.5 is to

define a practical s bset of c an els where SAR me s rements are to b p rformed This

s bset of c an els is c osen so as to give a c aracterization of a DUT with an a pl ca le

exp s re stan ard

NOT In some c ses of Wi-Fi te h olo y a d oth r wid b n systems su h as WiMA , th ma imum o tp t

p wer of a c a n l ma v ry a ros th fre u n y b n Th re uire test c a n ls ma n t in lu e th c a n l

with th hig est RF tra smit p wer For e ample for Wi-Fi b se te h olo ies, th c a n ls o eratin at th b n

e g ma pro u e lower p wer in ord r to c mply with sp cific o t ofb n lmits, th refore it ma b n c s ary to

p rform th testin o th c a n l a ja e t to th b n e g c a n l For oth r d vic s, th ma imum o tp t

p wer of difere t c a n ls ma b o timize difere tly Th refore b fore p rformin testin usin th sp cific

c a n ls re uire b this sta d rd, th ma imum o tp t p wer of th c a n ls n e s to b v rifie to d termin

wh th r th c ose c a n ls are in e d pro u in th hig est rate o tp t of th d vic Th pro es use to

esta lsh th c a n ls for testin p rp ses sh l b d c me te in th test re ort

For e c o eratin mode of a wireles tec nolog u ed by the DUT, tests s al b p rformed

at the c an el closest to the centre of e c tran mit freq en y b n If the width of the

tran mit freq en y b n (∆f= f

hig– f

low) ex e d 1 % of its centre freq en y f

c, then the

c an els at the lowest an hig est freq en ies of the tran mit b n s al also b tested

Furthermore, if the width of the tran mit ban ex e d 10 % of its centre freq en y,

Formula (9) s al b u ed to determine the n mb r of c an els, N

c, to b tested:

1+])/

([10rou dup2

=

clowhigc

fff

a art in freq en y (as mu h as p s ible) an s al in lu e the c an els at the lowest an

hig est freq en ies Pro e calbration s al b val d for al test freq en ies an l q id

dielectric p rameters at those freq en ies Substantial y large tran mis ion b n s may

req ire multiple pro e cal bration p ints an diferent tis ue-eq ivalent l q id to cover the

entire freq en y b n

NOT 1 Re ulatory a e cies ma h v difere t re uireme ts o th n mb r of c a n ls to b teste p r

tra smis io b n , a c rdin to fre u n y alo atio s a d oth r wireles te h olo y re uireme ts

NOT 2 If th test fre u n y yieldin th hig est o tp t p wer d es n t c resp n to th mid le c a n l th

test re uireme ts ma v ry amo g difere t n tio al re ulatory a th rities

6.3 Te ts to be performe

In order to determine the hig est value of the p a sp tial-average SAR of a han set, al

req ired device p sition , config ration an o eratin modes s al b tested for e c

freq en y b n ac ordin to Ste s 1 to 3 b low For devices ca a le of simultane u

tran mis ion, a ply the a pro riate proced re des rib d in 6.4.3 A flowc art of the test

proces is s own in Fig re 5

Step 1: The me s rement proced re des rib d in 6.4.2 s al b p rformed at the c an el

that is closest to the centre of the tran mit freq en y b n (f

c) for e c tran mit anten a u ed:

a) al device test p sition (c e k an ti t, for b th lef an rig t sides of the SAM phantom,

as des rib d in 6.2.4);

b) al u e config ration for e c device p sition in a), e.g with device sl de or cover o en

an closed or anten a exten ed an retracted;

c) al o eratin modes, e.g analog e an digital mod lation for e c device p sition in a)

an config ration in b) in e c freq en y b n

Step 2: For the con ition providin hig est p a sp tial-average SAR determined in Ste 1

for e c config ration in a), b) an c), p rform al tests des rib d in 6.4.2 at al other test

freq en y c an els, e.g lowest an hig est c an els (se 6.2.5) In ad ition, for e c device

p sition, config ration an o eratin mode where the p a sp tial-average SAR value

determined in Ste s 1 a), b) an c) is gre ter than or eq al to half of the a pl ca le SAR l mit,

testin of al req ired c an els is req ired; otherwise, it is not req ired

Step 3: Examine al data an determine the re orting req irements for the largest p a

sp tial-average SAR value me s red in Ste 1 an Ste 2 An example is given in An ex M

Fig re 5 – Bloc dia ram of the te ts to be performe

6.4 Me s reme t proc dure

6.4.1 Ge eral

Subclau e 6.4 des rib s the proced re for evaluatin the p a sp tial-average SAR of the

DUT, in lu in the minimum n mb r of drif me s rements to b p rformed If the drif is hig

for a p rtic lar o eratin mode an freq en y c an el, more drif me s rements may b

neces ary, as des rib d in 7.2.8

IEC

6.4.2 Ge eral proc dure

The fol owin proced re s al b p rformed for e c of the test con ition (se Fig re 5)

des rib d in 6.3 Ta le 1 provides the me s rement p rameters u ed in the are s an an

Ta le 2 for the zo m s an

a) Me s re the local SAR at a test p int within 10 mm of the in er s rface of the phantom

where the me s red local SAR ex e d the lower detection l mit of the me s rement

s stem Prefera ly, the test p int wi b a ove the exp cted p a SAR location within

said distan e from the phantom s rface As explained at Ste f b low, a comp rative

me s rement wi b made by the s stem at the same p int afer completion of the SAR

me s rement

b) The are over whic the SAR me s rement is p rformed s al cover at le st an are

larger than the projection of the han set an anten a For some han sets, the are

projected onto the phantom can b large s c that the pro e may not re c al p ints In

this case, rotated phantoms may b u ed an the are may b as es ed by multiple

overla pin are s an Me s re the two-dimen ional SAR distribution within the

phantom (are s an proced re) The b u dary of the me s rement are s al b with

resp ct to the SAM phantom req irements The me s rement resolution an sp tial

resolution for interp lation s al b c osen to alow identification of the local p a

location to within one-half of the lne r dimen ion of the cor esp n in side of the zo m

-s an volume The maximum grid sp cin s al b 2 mm for freq en ies eq al to or b low

3 GHz an (6 /f[GHz]) mm for freq en ies a ove 3 GHz The resolution SAR u certainity

of the me s rement can b estimated u in the fu ction in 7.2.10 The maximum

distan e b twe n the ge metrical centre of the pro e detectors an the in er s rface of

the phantom s al b ≤ 5 mm for freq en ies eq al to or b low 3 GHz and δ ln(2) 2 mm

for freq en ies a ove 3 GHz, where δ is the plane wave p netration de th an ln(x) is the

natural logarithm [8 ] The maximum variation of the sen or-phantom s rface distan e

s al b ± 1 mm for freq en ies eq al to or b low 3 GHz an ± 0,5 mm for freq en ies

a ove 3 GHz At al me s rement p ints, the an le of the pro e with resp ct to the l ne

normal to the s rface s al b les than 3 ° for freq en ies eq al to or b low 3 GHz an

2 ° for freq en ies a ove 3 GHz (se Fig re 6) Ta le 1 provides the me s rement

p rameters req ired for the are s an

c) From the s an ed SAR distribution, identify the p sition of the maximum SAR value, in

ad ition identify the p sition of an local maxima with SAR values within 2 dB of the

maximum value that wi not b within the zo m s an of other p a s Ad itional p a s

s al b me s red only when the primary p a is within 2 dB of the SAR complan e l mit

(e.g 1 W/kg for 1,6 W/kg, 1 g l mit; or 1,2 W/kg for 2 W/kg, 10 g l mit

d) Me s re the thre -dimen ional SAR distribution at the local maxima location identified in

Ste c) (zo m s an proced re) The horizontal grid ste s al b (2 /f[GHz]) mm or les

but not more than 8 mm The minimum zo m s an size is 3 mm by 3 mm by 3 mm for

freq en ies eq al to or b low 3 GHz For hig er freq en ies, the minimum zo m s an

size can b red ced to 2 mm by 2 mm by 2 mm A smal er volume zo m s an with

tig ter sp cin b twe n the me s rement p ints is al owed d e to ste p r decay of the

E- ield, whic may red ce the me s rement time For freq en ies a ove 3 GHz, the grid

ste in the vertical direction s al not ex e d (8 − f[GHz]) mm, an for freq en ies eq al

to or b low 3 GHz if u iform sp cin is u ed the grid ste s al not ex e d 5 mm If

varia le sp cin is u ed in the vertical direction (non-u iform grid or graded grid ), the

maximum sp cin b twe n the two closest me s red p ints to the phantom s el s al not

ex e d (12/f[GHz]) mm for freq en ies a ove 3 GHz, an s al not ex e d 4 mm for

freq en ies at or b low 3 GHz Furthermore the sp cin b twe n farther adjacent p ints

s al in re se by an in remental factor not ex e din 1,5 When graded grid are u ed,

extra olation routines s al b tested ac ordin to 7.2.10.3.2 with the same sp cin as

u ed in me s rements The maximum distan e b twe n the ge metrical centre of the

pro e detectors an the in er s rface of the phantom s al b 5 mm for freq en ies eq al

to or b low 3 GHz an δ ln(2) 2 mm for freq en ies a ove 3 GHz, where δ is the plane

wave p netration de th an ln(x) is the natural logarithm Se arate grid s al b centred

on e c of the local SAR maxima fou d in Ste c) At al me s rement p ints, the an le of

the pro e with resp ct to the l ne normal to the s rface s al b les than 3 ° for

e) Use the p st proces in , i.e the interp lation an extra olation proced res defined in 6.5,

to determine p a sp tial-average SAR values

f Me s re the local SAR at exactly the same test p int location as in Ste a) The SAR drif

of the DUT may b estimated by the diferen e b twe n the two me s red sin le-p int

SAR values in Ste s a) an f The SAR drif s al b k pt within ± 5 %; otherwise, se

7.2.8 for more information on ad res in SAR me s rement drif

Commercial han sets s ould have output p wer drifs within ± 5 % Some devices may have

sig ificant flu tuation in output p wer that are not clas ifia le as u desira le p wer drif but

rather are a c aracteristic of the normal o eratin b haviour of the device In these case,

other method s c as p wer s al n can b p rformed with the aim of en urin that an

ac urate an con ervative SAR is o tained

Un ertainties d e to field distortion b twe n the media b u dary an the dielectric en los re

of the pro e s al also b minimized, whic is ac ieved if the distan e b twe n the phantom

s rface an ph sical tip of the pro e is larger than one pro e tip diameter Comp n ation

method are typicaly uti zed to a ply cor ection proced res for these b u dary efects to

ena le me s rements closer than half the pro e diameter [131] esp cial y a ove 3 GHz

Table 1 – Are s a parameters

f≤3 GHz 3 GHz < f≤ 6GHz

Ma imum dista c b twe n th me sure p ints

(g ometric c ntre of th se sors) a d th in er

Th pro e a gle with resp ct to th p a tom surfa e n rmal is restricte d e to th d gra atio in th

me sureme t a c ra y in fields with ste p sp tial gra ie ts Th me sureme t a c ra y d cre ses with

in re sin pro e a gle a d in re sin fre u n y This is th re so for th tig ter pro e a gle restrictio at

fre u n ies a o e 3 GHz

Table 2 – Zoom s a parameters