This p rt is an international stan ard whic gives immu ity req irements an test proced res related to "damp d os i atory mag etic field"... ELECTROMAGNETIC COMPATIBILITY EMC – Part 4-10:
Trang 1Elect romagnetic compat ibi ity (EMC) –
Part 4- 10: Test ing and measurement t echniques – Damped osci latory magnetic
field immunity t est
Partie 4- 10: Techniques d'essai et de mesure – Essai d'immunité du champ
magnétique osci lat oire amort i
Trang 2THIS PUBLICATION IS COPYRIGHT PROT CTED
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Trang 3Electromagnetic compatibi it y (EMC) –
Part 4- 10: Testing and measurement techniques – Damped osci latory magnet ic
field immunity test
Partie 4- 10: Techniques d'essai et de mesure – Essai d'immunit é du champ
magnét ique osci latoire amort i
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Trang 4CONTENTS
FOREWORD 5
INTRODUCTION 7
1 Sco e an o ject 8
2 Normative ref eren es 8
3 Terms, def i ition an a breviated terms 9
3.1 Terms an def i ition 9
3.2 Ab reviation 10 4 General 10 5 Test levels 10 6 Test in trumentation 11 6.1 General 1
6.2 Damp d os i atory wave generator 1
6.2.1 General 1
6.2.2 Perf orman e c aracteristic of the generator con ected to the stan ard in u tion coi 12 6.3 Stan ard in u tion coi 14 6.4 Cal bration of the test s stem 14 7 Test setup 15 7.1 Test eq ipment 15 7.2 Verif i ation of the test in trumentation 15 7.3 Test setup for ta le-to EUT 16 7.4 Test setup for f lo r stan in EUT 16 7.5 Test setup for damp d os i atory f ield a pl ed in-situ 18 8 Test proced re 18 8.1 General 18 8.2 L b ratory ref eren e con ition 18 8.2.1 Cl matic con ition 18 8.2.2 Electromag etic con ition 18 8.3 Exec tion of the test 19 9 Evaluation of test res lts 19 10 Test re ort 2
An ex A (informative) Inf ormation on the field distribution of stan ard in u tion coi s 21
A.1 General 21
A.2 Determination of the coi f actor 21
A.2.1 General 21
A.2.2 Coi factor calc lation 21
A.3 1 m × 1 m stan ard in u tion coi 2
A.4 1 m × 2,6 m stan ard in u tion coi with ref eren e grou d plane 2
A.5 1 m × 2,6 m stan ard in u tion coi without referen e grou d plane 2
An ex B (informative) Selection of the test levels 2
An ex C (informative) Damp d os i atory mag etic field f req en y 2
An ex D (informative) Me s rement u certainty (MU) con ideration 2
D.1 General 2
D.2 L gen 2
Trang 5D.3 Un ertainty contributors to the p ak c r ent an to the damp d os i atory
mag etic f ield me s rement u certainty 2
D.4 Un ertainty of p ak c r ent an damp d os i atory mag etic f ield calbration 3
D.4.1 General 3
D.4.2 Pe k c r ent 30 D.4.3 Further MU contribution to ampl tu e an time me s rements 3
D.4.4 Rise time of the ste resp n e an b n width of the freq en y resp n e of the me s rin s stem 3
D.4.5 Impulse p ak distortion d e to the lmited b n width of the me s rin s stem 3
D.5 Ap l cation of u certainties in the damp d os i atory wave generator compl an e criterion 3
An ex E (informative) 3D n merical simulation 3
E.1 General 3
E.2 Simulation 3
E.3 Comments 3
Bibl ogra h 41
Fig re 1 – Simpl f ied s hematic circ it of the test generator f or damp d os i atory mag etic f ield 12 Fig re 2 – Wavef orm of s ort-circ it c r ent in the stan ard coi s 13 Fig re 3 – Wavef orm of s ort-circ it c r ent s owin the re etition time T re 13 Fig re 4 – Example of a c r ent me s rement of stan ard in u tion cois 14 Fig re 5 – Example of test setup f or ta le-to eq ipment 16 Fig re 6 – Example of test setup f or flo r stan in eq ipment s owin the horizontal orthogonal plane 17 Fig re 7 – Example of test setup f or flo r stan in eq ipment s owin the vertical orthogonal plane 17 Fig re 8 – Example of test setup u in the proximity method 18 Fig re A.1 – Rectan ular in u tion coi with sides a + b an c 22 Fig re A.2 – + dB isol ne f or the mag etic field stren th (mag itu e) in the x-y plane f or the 1 m × 1 m in u tion coi 2
Fig re A.3 – + dB an – dB isol nes f or the mag etic f ield stren th (mag itu e) in the x-z plane f or the 1 m × 1 m in u tion coi 2
Fig re A.4 – + dB isol ne f or the mag etic field stren th (mag itu e) in the x-z plane f or the 1 m × 2,6 m in u tion coi with ref eren e grou d plane 2
Fig re A.5 – + dB an – dB isol nes f or the mag etic f ield stren th (mag itu e) in the x-y plane f or the 1 m × 2,6 m in u tion coi with ref eren e grou d plane 2
Fig re A.6 – + dB isol ne f or the mag etic field stren th (mag itu e) in the x-y plane f or the 1 m × 2,6 m in u tion coi without ref eren e grou d plane 2
Fig re A.7 – + dB an – dB isol nes f or the mag etic f ield stren th (mag itu e) in the x-z plane f or the 1 m × 2,6 m in u tion coi without ref eren e grou d plane 2
Fig re E.1 – Cur ent with p riod of 1 µs an H-f ield in the center of the 1 m × 1 m stan ard in u tion coi 3
Fig re E.2 – Hx–f ield alon the side of 1 m × 1 m stan ard in u tion coi in A/m 3
Fig re E.3 – Hx–f ield in direction x p rp n ic lar to the plane of the 1 m × 1 m stan ard in u tion coi 3
Fig re E.4 – Hx–f ield alon the side in dB f or 1 m × 1 m stan ard in u tion coi 3
Trang 6Fig re E.5 – Hx–f ield alon the diagonal in dB f or the 1 m × 1 m stan ard in u tion coi 3
Fig re E.6 – Hx–f ield plot on y-z plane f or the 1 m × 1 m stan ard in u tion coi 3
Fig re E.7 – Hx-field plot on x-y plane f or the 1 m × 1 m stan ard in u tion coi 3
Fig re E.8 – Hx–f ield alon the vertical mid le l ne in dB f or the 1 m × 2,6 m stan ard
in u tion coi 3
Fig re E.9 – Hx–f ield 2D– lot on y-z plane for the 1 m × 2,6 m stan ard in u tion coi 4
Fig re E.10 – Hx–f ield 2D– lot on x-y plane at z = 0,5 m for the 1 m × 2,6 m stan ard
in u tion coi 4
Ta le 1 – Test levels 1
Ta le 2 – Pe k c r ent sp cif i ation of the test s stem 15
Ta le 3 – Waveform sp cifi ation of the test s stem 15
Ta le D.1 – Example of u certainty bu get for the p ak of the damp d os i atory
c r ent impulse (I
p) 31
Ta le D.2 – α f actor (se eq ation (D.6) of dif ferent u idirectional impulse resp n es
cor esp n in to the same b n width of the s stem B 3
Ta le D.3 – β f actor (eq ation (D.12) of the damp d os i atory waveform 34
Trang 7INTERNATIONAL ELECTROTECHNICAL COMMISSION
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International Stan ard IEC 610 0-4-10 has b en pre ared by s bcommite 7 B: Hig
f req en y phenomena, of IEC tec nical commite 7 : Electromag etic comp tibi ty
It f orms Part 4-10 of the IEC 610 0 series It has the statu of a b sic EMC publ cation in
ac ordan e with IEC Guide 10
This secon edition can els an re laces the f irst edition publs ed in 19 3 an Amen ment
1:2 0 This edition con titutes a tec nical revision
This edition in lu es the f ol owin sig if i ant tec nical c an es with resp ct to the previou
edition:
a) new An ex A on in u tion coi f ield distribution;
b) new An ex D on me s rement u certainty;
Trang 8c) new An ex E f or n merical simulation ;
d) cal bration u in c r ent me s rement has b en ad res ed in this edition
The text of this stan ard is b sed on the fol owin doc ments:
Ful inf ormation on the votin f or the a proval of this stan ard can b f ou d in the re ort on
votin in icated in the a ove ta le
This publcation has b en draf ted in ac ordan e with the ISO/IEC Directives, Part 2
A l st of al p rts in the IEC 610 0 series, publ s ed u der the general title Ele troma n tic
c mp tibility (EMC), can b fou d on the IEC we site
The commit e has decided that the contents of this publ cation wi remain u c an ed u ti
the sta i ty date in icated on the IEC we site un er "htp:/we store.iec.c " in the data
related to the sp cifi publ cation At this date, the publ cation wi b
• recon rmed,
• with rawn,
• re laced by a revised edition, or
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colour printer
Trang 9Des ription of the en ironment
Clas ifi ation of the en ironment
Mitigation method an devices
Part 6: Ge eric sta dards
Part 9: Mis el a eous
Eac p rt is f urther s bdivided into several p rts, publ s ed either as international stan ard
or as tec nical sp cif i ation or tec nical re orts, some of whic have alre d b en publs ed
as section Others wi b publ s ed with the p rt n mb r f olowed by a das an a secon
n mb r identif yin the s bdivision (example: IEC 610 0-6-1)
This p rt is an international stan ard whic gives immu ity req irements an test proced res
related to "damp d os i atory mag etic field"
Trang 10ELECTROMAGNETIC COMPATIBILITY (EMC) –
Part 4-10: Testing and measurement techniques –
Damped osci latory magnetic f ield immunity test
1 Scope and object
This p rt of IEC 610 0 sp cif ies the immu ity req irements, test method , an ran e of
recommen ed test levels for eq ipment s bjected to damp d os i atory mag etic
disturb n es related to medium voltage an hig voltage s b-station
The test defi ed in this stan ard is a pl ed to eq ipment whic is inten ed to b in tal ed in
location where the phenomenon as sp cif ied in Clau e 4 wi b en ou tered
This stan ard do s not sp cif y disturb n es d e to ca acitive or in u tive coupl n in ca les
or other p rts of the f ield in tal ation IEC 610 0-4-18, whic de ls with con u ted
disturb n es, covers these asp cts
The o ject of this stan ard is to esta l s a common an re rod cible b sis f or evaluatin the
p rf orman e of electrical an electronic eq ipment for medium voltage an hig voltage s
b-station when s bjected to damp d os i atory mag etic f ield
The test is mainly a plca le to electronic eq ipment to b in tal ed in H.V s b-station
Power plants, switc ge r in tal ation , smart grid s stems may also b a pl ca le to this
stan ard an may b con idered by prod ct commit e s
NOT As d s rib d in IEC Guid 10 , this is a b sic EMC p blc tio f or u e b pro u t c mmite s of th IEC
As als state in Guid 10 , th IEC pro u t c mmite s are re p n ible for d terminin wh th r this immu ity
te t sta d rd is a ple or n t, a d if a ple , th y are re p n ible for d terminin th a pro riate te t le els a d
p rorma c criteria TC 7 a d its s b-c mmite s are pre are to c -o erate with pro u t c mmite s in th
e alu tio of th v lu of p rtic lar immu ity te t le els f or th ir pro u ts
This stan ard def i es:
– a ran e of test levels;
– test eq ipment;
– test setups;
– test proced res
2 Normative ref erenc s
The f olowin doc ments, in whole or in p rt, are normatively ref eren ed in this doc ment an
are in isp n a le f or its a pl cation For dated ref eren es, only the edition cited a pl es For
u dated ref eren es, the latest edition of the referen ed doc ment (in lu in an
amen ments) a pl es
IEC 6 0 0 (al p rts), I ntern tio al Electrotec nic l Vo a ulary (IEV) (avaia le at
www.electro edia.org)
Trang 113 Terms, def initions and abbreviated terms
set of o eration whic esta ls es, by ref eren e to stan ard , the relation hip whic exists,
u der sp cified con ition , b twe n an in ication an a res lt of a me s rement
Note 1 to e try: This term is b s d o th "u c rtainty" a pro c
Note 2 to e try: Th relatio s ip b twe n th in ic tio s a d th re ults of me s reme t c n b e pre s d, in
prin iple, b a c lbratio dia ram
[SOURCE: IEC 6 0 0-31 :2 01, 31 -01-0 ]
3.1.2
dampe os i atory wa e ge erator
generator del verin a damp d os i ation whose f req en y can b set to 10 kHz or 1 MHz
an whose dampin time con tant is f i e p riod
3.1.3
immunity
a i ty of a device, eq ipment or s stem to p rform without degradation in the presen e of an
electromag etic disturb n e
[SOURCE: IEC 6 0 0-161:19 0, 161-01-2 ]
3.1.4
ind ction coi
con u tor lo p of defi ed s a e an dimen ion , in whic a c r ent f lows, generatin a
mag etic f ield of def i ed u if ormity in a def i ed volume
3.1.5
ind ction coi f actor
ratio b twe n the mag etic f ield stren th generated by an in u tion coi of given dimen ion
an the cor esp n in c r ent value
Note 1 to e try: Th f i ld is th t me s re at th c ntre of th c i pla e, with ut th EUT
3.1.6
proximity method
method of a pl cation of the mag etic f ield to the EUT, where a smal in u tion coi is moved
alon the side of the EUT in order to detect p rtic larly sen itive are s
3.1.7
ref ere c groun
p rt of the Earth con idered as con u tive, the electrical p tential of whic is con entional y
taken as zero, b in outside the zone of in uen e of an e rthin (grou din ) ar an ement
[SOURCE: IEC 6 0 0-19 :19 8, 19 -01-01]
Trang 123.1.8
set of interde en ent elements con tituted to ac ieve a given o jective by p rformin a
sp cif ied fun tion
Note 1 to e try: Th s stemis c n id re to b s p rate f rom th e viro me t a d oth r e tern l s stems b a
ima in ry s ra e whic c ts th ln s b twe n th m a d th c n id re s stem Thro g th s ln s, th s stem
is af fe te b th e viro me t, is a te u o b th e tern l s stems, or a ts its lf o th e viro me t or th
e tern l s stems
3.1.9
tra sie t, adjective an nou
p rtainin to or desig atin a phenomenon or a q antity whic varies b twe n two
con ec tive ste d states d rin a time interval s ort comp red to the time s ale of interest
[SOURCE: IEC 6 0 0-161:19 0, 161-0 -01]
3.1.10
v rific tion
set of o eration whic is u ed to c ec the test eq ipment s stem (e.g the test generator
an its intercon ectin ca les) to demon trate that the test s stem is f un tionin
Note 1 to e try: Th meth d u e for v rif i atio ma b difere t fomth s u e for c lbratio
Note 2 to e try: For th p rp s s of this b sic EMCsta d rd this d f i itio is dif fere t f rom th d f i itio giv n in
Damp d os i atory mag etic f ield are generated by the switc in of H.V bu -b rs by
isolators or dis on ectors The mag etic f ield to whic eq ipment is s bjected can in uen e
the rel a le o eration of eq ipment an s stems
The f ol owin tests are inten ed to demon trate the immu ity of eq ipment when s bjected
to damp d os i atory mag etic f ield related to the sp cif i location an in tal ation con ition
of the eq ipment (e.g proximity of eq ipment to the disturb n e source)
The wave s a e of the test f ield cor esp n s to a damp d os i atory wave (se Fig re 2)
The c aracteristic are given in 6.2.2
Inf ormation on the os i ation freq en y is given in An ex C
5 Test levels
The prefer ed ran e of test levels is given in Ta le 1
Trang 13The test levels s al b selected ac ordin to the in tal ation con ition Clas es of
in tal ation are given in An ex B
6 Test instrumentation
The test s stem comprises the damp d os i atory wave generator an the in u tion coi f or a
ta le-to test setup an , in ad ition, an RGP for a f lo r stan in test setup
Trang 14U: Hig v lta e s urc R
c: Ch rgin re istor
Figure 1 – Simpl fie s hematic circ it of the te t ge erator
for dampe os i latory ma netic f ield
6.2.2 Perf orma c c ara teristic of the g nerator con e te to the sta d rd
Re etition rate 1/T
re(se Fig re 3) 4 /s ± 10 % f or 10 kHz an 4 0/s ± 10 % f or
1 MHz
Os i ation f req en y is def i ed as the reciprocal of the p riod of the f irst an third zero
cros in s af ter the initial p ak This p riod is s own as T in Fig re 2
Trang 15T = 1 µs ( MHz) or 10 µs (0,1 MHz)
Fig re 2 – Wa ef orm of s ort circ it c r e t in the sta dard coi s
Figure 3 – Wa eform of s ort circ it c r e t s owing the repetition time T
rep
The formula of the ide l wavef orm of Fig re 2, I
DOS(t ), is as folows:
( )
e
tttt
KHi
KtI
htt
hh
tt
n
tt
eKH
1
12
21
1Pk
Trang 16an the p rameters f or the os i ation p riod T = 10 µs are:
6.3 Sta dard ind ction coi
For the two sin le-turn stan ard cois of 1 m x 1 m an 1 m x 2,6 m, the f ield distribution is
k own an s own in An ex A Therefore, no f ield verif i ation or f ield calbration is neces ary;
the c r ent me s rement as s own in Fig re 4 is s f f icient
Figure 4 – Ex mple of a c r e t me s reme t of sta dard indu tion coi s
The in u tion coi s al b made of co p r, aluminium or an cond ctive non-mag etic
material, of s c cros -section an mec anical ar an ement as to f aci tate its sta le
The output c r ent s al b verif ied with the generator con ected to the stan ard in u tion
coi sp cified in 6.3 The con ection s al b re l zed by twisted con u tors or a co xial ca le
of up to 3 m len th an a s ita le cros -section
The sp cif i ation given in Ta le 3 are not a pl ca le for cal bration p rf ormed at test level 5
with the 1 m × 2,6 m stan ard in u tion coi con ected In this case, the cal bration s al b
p rformed by only u in the 1 m × 1 m stan ard in u tion coi
The fol owin sp cifi ation given in Ta le 2 an Ta le 3 s al b verified
Trang 17Table 2 – Pe k c r e t spe ific tions of the te t sy tem
NOT 2 Th c lc late v lu is 15 ; h we er, th re is c r e tly n
c mmercial g n rator a aia le
Table 3 – Wav form spe ific tion of the te t s stem
PKIPKID
PKIPKID
PKIPKID
PKIPKID
r
÷
=
< 5 %
The cal bration s al b p rformed at al levels whic are u ed by la oratories
The cal bration s al b car ied out with a c r ent pro e an os i os o e or other eq ivalent
me s rement in trumentation with a 10 MHz minimum b n width
7 Test setup
7.1 Te t e uipme t
The fol owin eq ipment is p rt of the test setup:
– eq ipment u der test (EUT);
– au i ary eq ipment (AE) when req ired;
– ca les (of sp cif ied typ an len th);
– damp d os i atory wave generator;
– stan ard in u tion coi ;
– RGP in case of testin f lo r stan in eq ipment
7.2 Verif ic tion of the te t instrume tation
The purp se of verifi ation is to en ure that the test setup is o eratin cor ectly The test
setup in lu es:
Trang 18– the in u tion coi ;
– the intercon ection ca les of the test eq ipment
To verif y that the s stem is f un tionin cor ectly, the fol owin sig al s ould b c ec ed:
– impulse present at the stan ard in u tion coi terminals
It is s f f icient to verif y that the impulse is present at an level by u in s ita le me s rin
eq ipment (e.g c r ent pro e, os i os o e)
NOT Te t la oratorie c n d fin a intern l c ntrol refere c v lu a sig e to this v rif i atio pro e ure
7.3 Te t s tup f or table- op EUT
Ta le-to EUTs s al b placed on a non-con u tive ta le The 1 m × 1 m stan ard in u tion
coi may b u ed for testin EUTs with dimen ion up to 0,6 m × 0,6 m × 0,5 m (L × W × H)
The 1 m × 2,6 m stan ard in u tion coi may b u ed f or testin EUTs with dimen ion up to
0,6 m × 0,6 m × 2 m (L × W × H)
The in u tion coi s al b p sitioned in thre orthogonal orientation
When an EUT do s not f it into the in u tion coi of 1 m x 2,6 m, the proximity method (se
7.4) s al b a pl ed
It is not neces ary to maximize the imp ct of ca les d rin this test The proximity of the
ca les to the in u tion coi can imp ct the res lts so the ca les s al b routed to minimize
this imp ct The minimized ca l n dimen ion s al b in orp rated into the determination of
the maximum size of an EUT that can b tested
An RGP is not req ired b low the EUT (se Fig re 5 b low) The in u tion coi s al b ke t
at le st 0,5 m f rom any con u tin s rfaces, for example the wal s an f lo r of a s ielded
en los re
Figure 5 – Ex mple of te t s tup f or table- op e uipme t
7.4 Te t s tup f or floor sta ding EUT
The stan ard in u tion coi for testin f lo r stan in eq ipment (e.g rac s) has a rectan ular
s a e of 1 m × 2,6 m where one s ort side may b the RGP f or large sized eq ipment (se
Fig re 7) The 1 m × 1 m in u tion coi can b u ed f or f lo r stan in eq ipment with the
Trang 19The RGP s al have a minimum thic nes of 0,6 mm an a minimum size of 1 m × 1 m The
EUT s al b in ulated from the RGP
Fig re 6 – Ex mple of te t s tup f or f loor sta ding e uipme t
s owin th horizontal orthogonal pla e
For flo r stan in eq ipment (e.g ca inets) where the to of the EUT is gre ter than 0,7 m
f rom the RGP, more than one p sition s al b tested In an case, the in u tion coi s own in
Fig re 6 s al not b placed b low 0,5 m Fig re 7 s ows an example f or testin with a
vertical orthogonal plane
Fig re 7 – Ex mple of te t s tup f or f loor sta ding e uipme t
s owing the v rtic l orthogonal pla e
The test volume of the rectan ular coi is 0,6 m × 0,6 m × 2 m (L × W × H)
When an EUT do s not f it into the rectan ular coi of 1 m × 2,6 m, the proximity method (se
Fig re 8 an 7.5 for more detai ed inf ormation) s al b a pl ed
It is not neces ary to maximize the imp ct of ca les d rin this test The proximity of the
ca les to the in u tion coi can imp ct the res lts so the ca les s al b routed to minimize
this imp ct The minimized ca l n dimen ion s al b in orp rated into the determination of
the maximum size of the EUT that can b tested
Trang 20Figure 8 – Ex mple of te t s tup using th proximity method
7.5 Te t s tup f or dampe os i latory field ap l e in-situ
In-situ testin is general y the only practical test method avai a le for large mac inery or
simi ar eq ipment Durin in-situ testin , an RGP is normal y not avai a le Theref ore the
proximity method is the only practical test method without the RGP in place Fig re 8 gives an
example f or a test setup for in-situ testin The 1 m × 1 m stan ard in u tion coi s ould b
u ed when examinin EUTs u in the proximity method Further, it is neces ary that the
stan ard in u tion coi is isolated from the EUT The distan e b twe n the stan ard in u tion
– the verif i ation of the test in trumentation ac ordin to 7.2;
– the esta l s ment of the la oratory ref eren e con ition ;
– the con rmation of the cor ect o eration of the EUT;
– the exec tion of the test;
– the evaluation of the test res lts (se Clau e 9)
8.2 Laboratory ref ere c conditions
8.2.1 Cl matic condition
Unles otherwise sp cified in generic, prod ct-fami y or prod ct stan ard , the cl matic
con ition in the la oratory s al b within an l mits sp cif ied f or the o eration of the EUT
an the test eq ipment by their resp ctive man facturers
Tests s al not b p rf ormed if the relative h midity is so hig as to cau e con en ation on
the EUT or the test eq ipment
8.2.2 Ele troma netic conditions
The electromag etic con ition of the la oratory s al b s c as to g arante the cor ect
o eration of the EUT so as not to in uen e the test res lts
Trang 21• os i ation freq en ies;
• re resentative o eratin con ition of the EUT;
• orientation of the f ield;
• n mb r of test p ints;
• location of the stan ard in u tion coi relative to the EUT ( est p ints);
• selection an ju tif i ation of test p ints (recommen ed are are s of EUT s s e tible to
damp d os i atory mag etic f ield )
Testin an cal bration s al b p rf ormed b sed on the wavef orm sp cif ied in Fig re 2 an
Fig re 3
NOT Pro u t c mmite s c n a ply lo g r te t d ratio s, if a pro riate f or th ir pro u ts
The test d ration s al b a pl ed only one time for e c orientation
9 Evaluation of test results
The test res lts s al b clas if ied in terms of the los of fun tion or degradation of
p rforman e of the eq ipment u der test, relative to a p rf orman e level def i ed by its
man facturer or the req estor of the test, or agre d b twe n the man facturer an the
purc aser of the prod ct The recommen ed clas ifi ation is as f ol ows:
a) normal p rf orman e within l mits sp cif ied by the man facturer, req estor or purc aser;
b) temp rary los of fun tion or degradation of p rf orman e whic ce ses af ter the
disturb n e ce ses, an from whic the eq ipment u der test recovers its normal
p rforman e, without o erator intervention;
c) temp rary los of f un tion or degradation of p rforman e, the cor ection of whic req ires
o erator intervention;
d) los of fun tion or degradation of p rforman e whic is not recovera le, owin to damage
to hardware or sof tware, or los of data
The man f acturer’s sp cifi ation may def i e eff ects on the EUT whic may b con idered
in ig if i ant, an theref ore ac e ta le
This clas if i ation may b u ed as a g ide in formulatin p rf orman e criteria, by commit e s
resp n ible f or generic, prod ct an prod ct-f ami y stan ard , or as a f ramework f or the
agre ment on p rforman e criteria b twe n the man facturer an the purc aser, f or example
where no s ita le generic, prod ct or prod ct-famiy stan ard exists
Eq ipment s al not b come dan erou or u safe as a res lt of the a pl cation of the tests
Trang 2210 Test report
The test re ort s al contain al the inf ormation neces ary to re rod ce the test In p rtic lar,
the fol owin s al b recorded:
– the items sp cif ied in the test plan req ired by 8.3;
– identif i ation of the EUT an an as ociated equipment, f or example, bran name, prod ct
typ , serial n mb r;
– identif i ation of the test eq ipment, for example, bran name, prod ct typ , serial n mb r;
– an sp cial en ironmental con ition in whic the test was p rf ormed, f or example,
s ielded en los re;
– an sp cif i con ition neces ary to ena le the test to b p rf ormed;
– the p rf orman e level def i ed by the man facturer, req estor or purc aser;
– the p rf orman e criterion sp cified in the generic, prod ct or prod ct-f ami y stan ard;
– an ef f ects on the EUT o served d rin or af ter the a pl cation of the test disturb n e,
an the d ration f or whic these ef fects p rsist;
– the rationale f or the p s /f ai decision (b sed on the p rf orman e criterion sp cif ied in the
generic, prod ct or prod ct-fami y stan ard, or agre d b twe n the man f acturer an
the purc aser);
– an sp cif i con ition of u e, for example ca le len th or typ , s ieldin or grou din , or
EUT o eratin con ition , whic are req ired to ac ieve compl an e;
– the in u tion coi s selected for the tests;
– the p sition an orientation of the in u tion coi relative to EUT
Trang 23Annex A
(inf ormativ )
Inf ormation on the f ield distribution of standard induction coi s
An ex A gives information on the maximum size of an EUT an its location in the stan ard
in u tion coi s The f ield is con idered s f ficiently u iform if the mag itude of the mag etic
f ield stren th is within ± dB of the field stren th in the centre of the in u tion coi
For the f ield computation the f i ite cros -section of the lo p con u tors are neglected ( hin
wire a proximation)
A.2 Determination of the coi f actor
The in u tion coi f actor s ould b determined by calc lation The coi factor is u ed to
calc late the c r ent in the in u tion coi to o tain the req ired mag etic f ield stren th in the
centre of the in u tion coi
A.2.2 Coi f actor c lc lation
The coi factor can b calc lated from the ge metrical dimen ion of the in u tion coi F r a
sin le-turn, rectan ular in u tion coi havin sides a + b an c (se Fig re A.1), the coi factor
+
++
=
=
22
22
CF
2/
//4
2/
//4
41)(
)(
cb
bccb
ca
acca
IPH
Pk
π
(A.1)
where H(P) is the mag etic f ield at p int P an I is the in u tion coi c r ent Eq ation (A.1) is
val d, when the largest dimen ion of the cros -section of the coi con u tor is smal comp red
to the s ortest side of the in u tion coi For a s uare in u tion coi with side c an if P is at
the centre of the coi , then a = b = c/2 If P is at the centre of a rectan ular coi , then a = b If
the RGP is the b tom side of the coi , then eq ation (A.1) is sti val d, takin into ac ou t the
image of the actual (ph sical) coi In this case, if P is at the centre of the ph sical coi, then
the k
CF
of the coi f ormed by the ph sical coi plu its image is given by eq ation (A.1) with b
= 3 × a
Trang 24Figure A.1 – Re ta gular induction coi with side a + b a d c
A.3 1 m × 1 m standard induction c i
The + dB an – dB isol nes f or the mag etic field stren th (mag itu e) are s own in
Fig re A.2 f or the x-y plane an in Fig re A.3 f or the x-z plane The maximum EUT size is
width × len th × heig t = 0,6 m × 0,6 m × 0,5 m
NOT Th –3 dB is ln is n t s own b c u e it is o tsid th lo p
Figure A.2 – + dB isol n f or the ma netic f ield stre gth (ma nitu e)
in the x-y pla e f or the 1 m × 1 m ind ction coi
Trang 25Figure A.3 – + dB a d – dB isol ne f or th ma n tic field stre gth (ma nitud )
in the x-z pla e for th 1 m × 1 m induction coi
A.4 1 m × 2,6 m standard induction c i with ref erence ground pla e
The + dB an -3 dB isol nes f or the mag etic f ield stren th (mag itu e) are s own
in Fig re A.4 f or the x-z plane an in Fig re A.5 f or the x-y plane The maximum EUT size is
width × len th × heig t = 0,6 m × 0,6 m × 2 m
For the calc lation of the ± 3 dB isol nes the size of the referen e grou d plane is con idered
as in nite
NOT Th –3 dB is ln is n t s own b c u e it is o tsid th lo p
Fig re A.4 – + dB isol ne f or the ma netic field stre gth (ma nitude) in the x-z pla e
f or the 1 m × 2,6 m induction coi with ref ere c groun pla e
Ma imum EUT siz
(width × h ig t = 0,6 m × 2,0m)
x-z pla e + dB
Trang 26Figure A.5 – + dB a d – dB isol ne f or th ma n tic field stre gth (ma nitud )
in the x-y pla e for the 1 m × 2,6 m ind ction coi with ref ere c ground pla e
A.5 1 m × 2,6 m standard induction c i without ref erence ground plane
The + dB an – dB isol nes f or the mag etic f ield stren th (mag itu e) are s own
in Fig re A.6 f or the x-y plane an in Fig re A.7 f or the x-z plane The maximum EUT size is
width × len th × heig t = 0,6 m × 0,6 m × 2 m
NOT Th –3 dB is ln is n t s own b c u e it is o tsid th lo p
Figure A.6 – + dB isol ne f or the ma netic field stre gth (ma nitude) in the x-y pla e
f or the 1 m × 2,6 m in uction coi without ref ere c ground pla e
Trang 27Figure A.7 – + dB a d – dB isol ne f or th ma netic field stre gth (ma nitud )
in the x-z pla e f or th 1 m × 2,6 m ind ction coi without ref ere c ground pla e
Trang 28Annex B
(inf ormativ )
Selection of the test levels
Test levels s al b selected in ac ordan e with the electromag etic en ironment in whic the
eq ipment con erned is inten ed to b u ed takin into ac ou t most re l stic in tal ation
con ition
Recommen ation for test levels are given in Clau e 5 The actual selection of test levels
s ould take into ac ou t
– the electromag etic en ironment;
– the p tential proximity of damp d os i atory mag etic f ield disturb n es sources to the
eq ipment con erned;
– the in tal ation con ition typical y to b exp cted for an in tal ation in the electromag etic
en ironment u der con ideration;
– the ne d an amou t of comp tibi ty margin , i.e the margin b twe n the maximum
disturb n e level an con idered immu ity level
An a pro riate test level f or eq ipment de en s on the electromag etic en ironment in whic
eq ipment is inten ed to b u ed Based on common in talation practices whic are
re resentative for the electromag etic en ironment con erned, a g ide f or the selection of
test levels f or damp d os i atory mag etic f ield testin may b the f olowin :
Clas 1: Electromag etic en ironment with p rtic lar mitigation me s res employed in
order to al ow electromag etic phenomena to oc ur to a certain extent only (e.g
phenomenon do s not oc ur, phenomenon oc urs with a relatively low ampl tu e
only, etc.)
Control ed electromag etic en ironment: where sen itive devices are plan ed to
b u ed (e.g electron micros o es, cathode ray tub s, etc.)
The test is not a pl ca le to eq ipment inten ed to b u ed in this clas of
en ironment
Clas 2: Electromag etic en ironment re resentative for residential are s
The test is not a pl ca le to eq ipment inten ed to b u ed in this clas of
en ironment b cau e the location con erned are not s bjected to the in uen e
of switc in phenomena in medium- an hig -voltage s bstation
Clas 3: Electromag etic en ironment re resentative for of f ice/commercial are s
L cation of this clas of en ironment are c aracterized by a p tential proximity to
medium-voltage an hig -voltage switc ge r or to con u tors car yin
cor esp n in tran ients A computer ro m in the vicinity of a s b-station mig t
b a re resentative for s c location
Clas 4: Electromag etic en ironment re resentative f or in u trial are s
L cation of this clas of en ironment are c aracterized by the presen e of
medium- or hig -voltage s bstation an of con u tors car yin tran ient fault
eq ipmentin tal ation mig t b re resentatives f or s c location
Clas 5: Hars electromag etic en ironment whic can b c aracterized by the f olowin
at ributes: con u tors, bu -b rs or M.V.or H.V Iines car yin ten of kA
Switc yard are s of he v in u trial plants, M.V/H.V s b-station an p wer
station mig t b re resentatives f or location with s c an electromag etic
en ironment
Clas X: Sp cial electromag etic en ironment
Trang 29The minor or major electromag etic se aration of interf eren e sources from
eq ipment circ its, ca les, l nes, etc an the q al ty of the in talation may
req ire the u e of hig er or lower test levels than those des rib d a ove This
may ne d a case-by-case as es ment
It s ould b noted that the l nes of eq ipment (e.g ca l n , bu b rs, overhe d l nes)
as ociated to electromag etic en ironments with hig er test levels can p netrate into
location b in as ig ed to an en ironment with lower test levels In s c cases a
re-as es ment of the later location with resp ct to the s ita le test levels s ould b car ied out
The a ove selection of test levels in terms of electromag etic en ironments s ould b u ed
as a g ide only There mig t b cases where a location mig t b as ig ed to one of the
a ove typ s of electromag etic en ironments but d e to the f eatures of the eq ipment
con erned or other circ mstan es a dif f erent test level than that as ociated to that typ of
electromag etic en ironment mig t b more a pro riate Cor esp n in as es ment s ould
b done by the p rties in olved (e.g prod ct commit e s)
Trang 30Annex C
(inf ormativ )
Damped osci latory magnetic f ield frequency
The phenomenon is typical of the switc in of isolators in H.V s b-station , an p rtic larly
in H.V bu -b rs
The o enin an closin o eration of H.V isolators gives rise to s arp front-wave tran ients,
with time of the order of ten of n These phenomena are smo thed by the overal
ca acitan e of the stru tures of H.V eq ipment as they pro agate
The voltage f ront-wave has an evolution that in lu es ref lection d e to the mismatc in of
the c aracteristic imp dan e of the H.V circ its in olved In this resp ct, the res ltin
tran ient voltage an c r ent in H.V bu -b rs are c aracterized by a f un amental os i ation
f req en y that de en s on the len th of the circ it an on the pro agation time
The tran ient c r ent p ak value that generates the mag etic f ield def i ed in this stan ard is
directly related to the p ak voltage on the bu -b rs an their c aracteristic imp dan e; the
voltage is a out twice the phase p ak value of the H.V s stem, an the c r ent (determined
also by the c aracteristic imp dan e of s c circ its) is a out 2 kA p ak
The freq en y of os i ation is determined by the len th of the H.V an by the self -in u tan e
of H.V circ its (1 µH/m), the series ca acity of the circ it-bre ker in the of f-state (5 0 p ),
the con entrated ca acity of ca acitive voltage tran f ormers (some nF), of c r ent
tran f ormers (3 0 p ) an of H.V s p orts (2 p e c )
The os i ation f req en y ran es from a out 10 kHz to a f ew MHz de en in on the
in uen e of the p rameter mentioned an the len th of the bu -b rs, whic may vary f rom
ten of meters to h n red of meters (4 0 m may oc ur)
In this resp ct the os i ation freq en y of 1 MHz may b con idered re resentative of most
situation , but 10 kHz has b en con idered a pro riate f or big H.V s b-station
The re etition freq en y is varia le an , provided the other con ition are the same, is a
f un tion of the distan e b twe n the switc in contacts: that is, with closed contacts, there is
the maximum re etition f req en y, whie for distan es b tween the contacts at the l mit of
extin tion of the arc, the minimum re etition f req en y in resp ct of e c phase is twice the
p wer freq en y (10 /s f or 5 Hz an 12 /s for 6 Hz H.V s stems), but at these freq en ies
the maximum mag etic f ield stren th oc urs
The re etition rates selected f or the 0,1 MHz an 1 MHz test f ield re resent therefore a
compromise, takin into ac ou t the dif f erent d ration of the phenomena, the
re resentativity of the dif f erent f req en ies an the pro lems related to the p wer of the test
generator
Trang 31Annex D
(inf ormativ )
Measurement uncertainty (MU) considerations
The compl an e of the re l zed disturb n e q antity with the disturb n e q antity sp cified by
this stan ard is u ualy con rmed throu h a set of me s rements (e.g me s rement of the
p ak of a damp d os i atory c r ent impulse with an os i os o e by u in a c r ent pro e)
The res lt of e c me s rement in lu es a certain amou t of me s rement u certainty (MU)
d e to the imp rf ection of the me s rin in trumentation as wel as to the lac of re e ta i ty
of the me s ran itself The evaluation of MU is done here ac ordin to the prin iples an
method des rib d in IEC TR 610 0-1-6
In order to evaluate MU it is neces ary to:
a) identif y the sources of u certainty, related b th to the me s rin in trumentation an to
the me s ran ,
b) identif y the f un tional relation hip (me s rement model) b twe n the in uen e (input
q antities an the me s red (output q antity,
c) o tain an estimate an stan ard u certainty of the input q antities,
d) o tain an estimate of the interval containin , with a hig level of con den e, the true
value of the me s ran
Further detai s are given in IEC TR 610 0-1-6
These estimates an u certainties, derived for a p rtic lar disturb n e q antity, do not
des rib the degre of agre ment b twe n the simulated electromag etic phenomenon, as
defi ed in the b sic stan ard, an the re l electromag etic phenomenon in the world outside
the la oratory
Sin e the eff ect of the p rameters of the disturb n e q antity on the EUT is a priori u k own
an in most cases the EUT s ows a nonl ne r b haviour, a sin le estimate an u certainty
n mb rs can ot b def i ed f or the disturb n e q antity Therefore e c of the p rameters of
the disturb n e q antity wi b ac omp nied by the cor esp n in estimate an u certainty
This yield to more than one u certainty bu get
iu
i(y), u
cy), U(y) a d y are e plain d in IEC TR
610 0- -6
D.3 Unc rtainty contributors to the pea cur ent a d to the damped
osci latory magnetic f ield me sureme t unc rtainty
The fol owin l st s ows the contributors u ed to as es b th the me s rin in trumentation
an test setup in uen es:
• re din of p ak value
• b n width of the me s rin s stem
Trang 32• s a e of the impulse resp n e of the me s rin s stem
• os i os o e horizontal axis me s rement er or
• os i os o e vertical axis me s rement er or
• cal bration of os i os o e an me s rin s stem
• coi f actor of the in u tion coi
D.4 Unc rtainty of pe k cur e t and d mpe os i latory ma n tic f ield
cal bration
In the case of the mag etic f ield test, the disturb n e q antities are the damp d os i atory
c r ent generated by the test generator an injected into the coi terminals an the damp d
os i atory mag etic f ield a pl ed to the EUT As dis u sed in Clau e D.1, an u certainty
bu get f or e c me s red p rameter of the disturb n e q antity is req ired The p rameters
of these disturb n e q antities are I
P
f or the impulse c r ent an H
P
for the impulse mag etic
f ield It is as umed that the mag etic field generated by the in u tion coi is pro ortional to
the c r ent flowin into its terminals, the con tant of pro ortional ty b in the coi factor k
CF
Therefore the impulse mag etic f ield has the same waves a e as the impulse c r ent an the
p ak of the mag etic f ield is o tained as H
Ad itional p rameters c aracterize the disturb n e, i.e the freq en y of os i ation an
dampin However the evaluation of the me s rement u certainty of these p rameters,
althou h req ired, is les deman in than that of impulse p ak Therefore at ention is foc sed
here on me s rement u certainty of the p ak of the impulse
The a pro c ado ted here to evaluate the impulse MU is des rib d in D.4.4 an D.4.5
Ta le D.1 gives an example of the u certainty bu get f or the p ak c r ent impulse The ta le
in lu es the input q antities that are con idered most sig if i ant for this example, the detais
(n merical values, typ of pro a i ty den ity f un tion, etc.) of e c contributor to MU an the
res lts of the calc lation req ired for determinin the u certainty bu get
p
11
=
B
VR
RV
I
β
δδ
Trang 33The damp d os i atory c r ent impulse os i ation f req en y f
0
= 1 MHz is as umed for the
f ol owin example of u certainty bu get
Table D.1 – Ex mple of un ertainty bud et for the pe k of
u
cy) = √ u
i(y)2
: is the voltage p ak re din at the output of a c r ent pro e or acros a c r ent s u t
The er or b u d is o tained as umin that the s o e has an 8-bit vertical resolution with
interp lation ca a i ty ( rian ular pro a i ty den ity f un tion) If the interp lation ca a i ty is
not avai a le or not active, then the rectan ular pro a i ty den ity fun tion is u ed
R
T
: is the tran fer imp dan e (or sen itivity) of the c r ent s u t or pro e An estimated value
of 0,0 1 Ω an an er or b u d of 5 % (rectan ular pro a i ty den ity fun tion) are as umed
δR: q antif ies the non- e e ta i ty of the me s rement setup, layout an in trumentation
This is a typ A evaluation b sed on the f ormula of the exp rimental stan ard deviation s(q
k)
of a sample of n re e ted me s rements q
nqs
1
2
11
(D.2)
where q is the arithmetic me n of the q
jvalues δR is expres ed in relative terms, an an
estimate of 0 % an an er or b u d of 3 % (1 stan ard deviation) are as umed
δV: q antif ies the ampl tu e me s rement inac urac of the s o e at d.c δV is expres ed in
relative terms A 2 % er or b u d of a rectan ular pro a i ty den ity f un tion an an estimate
of 0 % are as umed
β: is a co f ficient whic de en s on the s a e of b th the impulse resp n e of the me s rin
s stem an the stan ard impulse wavef orm in the neig b rho d of the p ak (se D.4.5) The
interval (6 8 ± 71) kHz is re resentative of a wide clas of s stems, e c havin a dif ferent
s a e of the impulse resp n e
B: the b n width B of the me s rin s stem can b exp rimental y o tained (direct
me s rement of the b n width) or calc lated f rom the b n width B
i
of e c element of the
Trang 34me s rement s stem (es ential y a c r ent pro e or s u t, a ca le an a s o e) by u in the
f ol owin eq ation:
.11
1
2
22
is 0,9 (e.g in th c s of a s u re in u tio lo p wh s sid
is 1 m) a d its e p n e u c rtainty is 5 % th n th b st e timate of H
P
is 10 A/m a d its e p n e u c rtainty
is 9,9 % (s e Ta le D.1
D.4.3 Furth r MU contribution to ampl tude a d time me s reme ts
The f ol owin contribution may also have an imp ct on the MU bu get:
DC of f set: The d.c of f set of the s o e contributes to the voltage p ak me s rement
u certainty, if the p ak is me s red f rom the nominal d.c zero l ne of the s o e This
contribution can b ig ored, if the re dout sof tware of the s o e me s res the p ak f rom the
pulse b se lne
Time ba e er or a d j t er: The os i os o e sp cif i ation may b taken as er or b u d of
rectan ular pro a i ty den ity f un tion Us al y these contribution are negl gible
Vertic l re olution: The contribution de en s on the vertical ampl tu e resolution ∆A an on
the slo e of the trace d A/d t The u certainty is related to the half width of the resolution an is
(∆A/2) (dA/d t ) If trace interp lation is p rf ormed (se the os i os o e man al) a trian ular
pro a i ty den ity f un tion is u ed, otherwise a rectan ular pro a i ty den ity f un tion is
u ed This contribution may not b neglgible when |d A/d t| < (∆A/T
i), where T
MS
T
sπ
s
is the delay time given by
(t)dtthT
∫
∞
=
00s
(D.5)
Eq ation (D.4) is e sier to han le, f rom the mathematical p int of view, than the u ual one
Trang 3510 % to 9 % rise time defi ition is u ual y ado ted Given the – dB b n width of the s stem
the two defi ition le d to comp ra le rise times In e d, if we def i e
Ta le D.2 It is evident f rom Ta le D.2 that it is not p s ible to identif y a u iq e value of α
sin e α de en s b th on the ado ted def i ition of the rise time (e.g b sed on thres old or
on eq ation (D.4) an on the s a e of the impulse resp n e of the me s rin s stem A
re sona le estimate of
αcan b o tained as the arithmetic me n b twe n the minimum
Further, it can b as umed that, if no information is avai a le a out the me s rin s stem
a art from its b n width, an value of α b twe n 3 1 × 10
−
an 3 9 × 10
−
is eq al y
pro a le Dif f erently stated, α is as umed to b a ran om varia le havin a rectang lar
pro a i ty den ity f un tion with lower an up er b u d 3 1 × 10
−
an 3 9 × 10
−
,
resp ctively The stan ard u certainty of α q antif ies b th: a) the in if f eren e to the
mathematical model ado ted f or the def i ition of the rise-time, an b) the in if feren e to the
s a e of the impulse resp n e of the s stem
Table D.2 – α f actor (s e e uation (D.6) of dif f ere t u idire tional impuls re pon e
cor e ponding to the s me ba dwidth of the s stem B
D.4.5 Impuls pe k distortion due to the l mite ba dwidth of th me s ring s stem
The distorted impulse waveform V ()
o t
at the output of the me s rin s stem is given by the
con olution integral
dthVtV
0in
o t
ttt
A⋅ = , where A is the d.c aten ation of the me s rin s stem The
input waveform can b a proximated by its Taylor series exp n ion a out the time in tant t
3
pp
in
2
pp
in
pin
tttV
VtV
Further
pin
<
′ tV
,
b cau e the con avity p ints downward (maximum), an
pin
>
′
tV
, b cau e, f or the stan ard
waveforms of interest here, the rise time is lower than the fal time Substitutin eq ation D.8
into eq ation D.7 an after simplf i ation , val d when the b n width of the me s rin s stem
is large with resp ct to the b n width of the input sig al (so that the p wer series terms
whose order is gre ter than two are negl gible), we o tain
Trang 36πα
Note that the p rameter β de en s on the secon derivative of the stan ard input waveform
an on the p rameter α def i ed an derived in D.4.4 A simple mathematical expres ion for
the stan ard damp d os i atory wavef orm, u eful f or u certainty calc lation, is given by
eVtV
t
02
pin
sin00
ωω
π
ζω
analytical y derived from eq ation (D.10) an (D.1 ) as
0f
The value of β, as o tained from eq ation (D.12), is re orted in Ta le D.3
Table D.3 – β f actor (e uation (D.12) of th dampe os i atory wa ef orm
n gle te
NOT 2 Th v lu s of β o tain d b u in e u tio (D.12) a d re orte in Ta le D.3 d n t a pre ia ly dif fer
fom th o e o tain d thro g c mp tatio fom th math matic l wa ef orm d f i e in this sta d rd
NOT 3 Dampin ζ c n b o tain d b me s rin th ratio ρ > 1 b twe n th ampltu e of o e ma imum (or
For a c mpla t wa eform, ζ is in th ra g 0,0 to 0,0
D.5 Appl c tion of uncertainties in the damped osci latory wave ge erator
compl anc criterion
General y, in order to b con dent that the c r ent an the mag etic f ield os i atory
tran ients are within their sp cif i ation , the calbration res lts s ould b within the sp cif ied
l mits of this stan ard ( oleran es are not red ced by MU)
Further g idan e is given in IEC TR 610 0-1-6:2 12, Clau e 6
Trang 37Annex E
(inf ormativ )
3D numerical simulations
In An ex E some other inf ormation is re orted con ernin the H-field distribution in ide an
outside the cois f or testin by u in 3D n merical simulation in the time domain (d namic
res lts) an f req en y domain (2D-n merical plot of the H-f ield) as exten ion of the 2D plots
of An ex A (static res lts)
E.2 Simulations
The simulation of Fig res E.1 to E.10 are p rf ormed as fol ows:
• The cois are ex ited by an ide l c r ent source (se the s mb l "p rt") havin the
mathematical waveform as def i ed in the text of this stan ard an normal zed at 1 A
• Two extreme s a e con u tors of the coi are con idered: rectan ular of size 10 cm × 1
cm (re orted in An ex E) an rou d wire of 1 mm radiu (res lts not re orted f or brevity)
• Def ault mes cel s are u ed to sp ed up the computation for the plots of Fig res E.2 an
E.3; for the other f i ures o timized mes cel s are u ed f or b ter ac urac
• H-f ield ampl tu e is in icated as Hx
i
where x in icates that the con idered H-f ield
comp nent is p ral el to the x-axis whi e the s bs ript i cor esp n s to the H-field pro e
p sition f rom the lo p centre to the last far away p sition
• The 2D H-field plots are calc lated at 1 MHz f req en y an 0 dB ref ers to 1 A/m
From the simulation , the fol owin con ideration arise:
• The computed H-f ield waveform has the same s a e as that of the coi c r ent source
• Very l tle dif f eren e can b noted when comp rin computed H-f ield wavef orms with two
extreme con u tor s a es f or the same coi size
• In the centre of the coi s, the in u tion coi factors are 0,9 m
-resp ctively
f or s uare an rectan ular coi s, whic practical y do not de en on the s a e of the coi
con u tor
• It is con rmed also by tran ient simulation that the variation of the H-field is les than
+ dB for the are s s own in An ex A
• It is s own an q antif ied that the H-f ield in re ses ra idly when the pro e u ed for
H-f ield computation a pro c es the con u tors of the coi
• The H-f ield value outside the lo p is a out 2 dB to 4 dB (1/10 to 1/10 ) lower than the
f ield at the center of the lo p This s ould b taken into ac ou t when car yin out the
proximity test method
Trang 38NOT Th ampltu e of th Hx-ield in id th lo p is n g tiv d e to th c o e pro e dire tio s.
Figure E.1 – Cur e t with period of 1 µ a d H-f ield in the c nter
of the 1 m × 1 m sta dard in uction coi
Figure E.2 – Hx f ield along the sid of 1 m × 1 m sta dard induction coi in A/m
IEC
Dista c (m) –3
Trang 39Figure E.3 – Hx f ield in dire tion x perpe dic lar to th pla e
of the 1 m × 1 m sta dard in uction coi
Figure E.4 – Hx field along th side in dB f or 1 m × 1 m sta dard induction coi
Trang 40Figure E.5 – Hx f ield along the dia on l in dB for the 1 m × 1 m sta dard ind ction coi
Figure E.6 – Hx f ield plot on y-z pla e for th 1 m × 1 m sta d rd indu tion coi