IEC TS 6291 6 Edition 1 0 201 7 04 TECHNICAL SPECIFICATION Photovoltaic modules – Bypass diode electrostatic discharge susceptibil ity testing IE C T S 6 2 9 1 6 2 0 1 7 0 4 (e n ) ® colour inside THI[.]
Trang 1IEC T S 6291 6
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Trang 3IEC T S 6291 6
Editio 1.0 2 17-0
testing
INT ERNAT IONAL
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Trang 4FOREWORD 3
1 Sco e 5
2 Normative referen es 5
3 Terms, definition an a breviated terms 5
4 General 6
5 Sampln 6
6 Test eq ipment 7
7 Test method 7
7.1 Pre aration 7
7.2 Surge testin 8
8 Data analy is
8 8.1 Two-p rameter Weibul distribution for analy in voltage to fai ure 8
8.2 Recommen ed median ran estimation for the c mulative distribution 9
8.3 Recommen ed form for data analy is by le st s uares l ne r regres ion 9
9 Re ort 1
0 An ex A (informative) Guidel nes for a pl cation 1
An ex B (informative) Example of a pl cation 12 Fig re 1 – Example of a test setup for byp s diodes 7
Fig re B.1 – Chart of sample data 12 Ta le 1 – Data organization for le st s uares regres ion 9
Ta le B.1 – Example of data analy is 1
2
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Trang 6The text of this tec nical sp cification is b sed on the fol owin doc ments:
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Trang 7PHOTOVOLTAIC MODULES – BYPASS DIODE
This doc ment des rib s a dis rete comp nent byp s diode electrostatic dis harge (ESD)
immu ity test an data analy is method The test method des rib d s bjects a byp s diode
to a progres ive ESD stres test an the analy is method provides a me n for analy in an
extra olatin the res ltin faiures u in the two-p rameter Weibul distribution fu ction
It is the o ject of this doc ment to esta l s a common an re rod cible test method for
determinin diode s rge voltage toleran e con istent with an ESD event d rin the
man facturin , p c agin , tran p rtation or in talation proces es of PV mod les
This doc ment do s not purp rt to ad res cau es of electrostatic dis harge or to esta l s
p s or fai levels for byp s diode devices It is the resp n ibi ty of the u er to as es the
ESD exp s re level for their p rtic lar circ mstan es The data generated by this proced re
may s p ort q al fication of new desig typ s, q al ty control for in omin material, an /or
identify the need for ad itional ESD controls in the man facturin proces
Final y, this doc ment do s not a ply to large energ s rge events s c as direct or in irect
l g tnin exp s re, uti ty ca acitor b n switc in events, or the lke
The fol owin doc ments are refer ed to in the text in s c a way that some or al of their
content con titutes req irements of this doc ment For dated referen es, only the edition
cited a ples For u dated referen es, the latest edition of the referen ed doc ment (in lu in
an amen ments) a pl es
m ea ure me t te c hniqu es – Ele c tro statc discharg e immuniy test
3 Terms, definitions and abbreviated terms
For the purp ses of this doc ment, the terms an definition of IEC TS 618 6 an the
fol owin a ply
ISO an IEC maintain terminological data ases for u e in stan ardization at the fol owin
ad res es:
• IEC Electro edia: avai a le at ht p:/ www.electro edia.org/
• ISO Onl ne browsin plat orm: avai a le at htp:/www.iso.org/o p
3.1
DUT
device u der test
3.2
c nta t dis h rge metho
method of testin in whic the electrode of the test generator is ke t in contact with the DUT
Trang 8Note 1 to e try: In this d c me t, th c nta t is to th ele tric l le d of th DUT with n interv nin ele tric l
in ulatio material
3.3
dio e c e k fu ction
u age of a multimeter with diode fu ction c ec to verify the diode is fu ctional, s ort or o en
3.4
dire t appl c tion
a pl cation of the test s rge directly to the DUT
Note 1 to e try: In this te h ic l s e ific tio , th s rg s are dire te to b p s dio e for p oto oltaic
a plc tio s o tsid of th a tu l p oto oltaic a plc tio (e.g D T are te te o tsid of th ju ctio b x a d are
n t a s ciate with th p oto oltaic mo ule its lf wh n c ara teriz d)
3.5
s rge rela ation time
amou t of time neces ary for the DUT to thermal y sta i ze in the event that s rge a pl cation
cre tes local zed region of he t generation
Prod ction lne q al ty ex ursion d e to byp s diode fai ure have b en o served in the PV
mod le man facturin proces d e to c an es in the electrostatic dis harge (ESD)
s s e tibi ty of byp s diodes This doc ment provides a method to evaluate the
s s e tibi ty of byp s diodes to fai d e to ESD events that may oc ur in the prod ction,
tran p rt or in tal ation of photovoltaic (PV) mod les ESD events oc ur whenever there is
contact, or s f iciently close proximity b twe n o jects of dif erent electrostatic c arge The
mag itu e of the ESD event is a fu ction of the c arge dif eren e b twe n the o jects an
the imp dan e as ociated with the c arge tran fer Of sp cific interest in this doc ment are
relatively low energy, s ort d ration s rges that may b as ociated with the man facturin
proces , testin , or in tal ation events where the byp s diodes are directly exp sed to an
ESD event
Several stan ard ESD models exist for the evaluation of s rge immu ity This doc ment
ado ts the model provided by IEC 610 0-4-2:2 0 that provides a method for as es in
damage to electrical an electronic eq ipment s bjected to static electricity dis harges from
o erators directly, an from p rson el to adjacent o jects
Ten u con itioned diodes are req ired for this test Several factors s ould b con idered
when makin sample selection:
• Diode typ s s al b identical Dif erent diode typ s wi not provide u eful s rge immu ity
information
– Eac diode typ that was tested d rin the develo ment of this proced re yielded a
dif erent fai ure distribution in icatin that mixed typ testin would not b me nin ful
• Diode date codes an factory location s ould b identical
– The b st c aracterization of a diode's s rge immu ity wi b o tained when the diodes
are from one man facturin location an from a sp cific man facturin b tc
– Comp rison of the fai ure distribution that res lt from a plyin this proced re to
several diferent date codes may provide the u er with a q altative u derstan in of
the diode man facturer's q alty control from a s rge immu ity p rsp ctive Simi arity
of res lts from dif erent date codes would in icate a tig ter q alty control method
• Diodes are tested in e en ently an outside of a mod le or ju ction b x The le d s al
Trang 9– L ad trimmin or le d formin o eration s ould be done b fore testin as these
o eration can cre te stres on the diode die that may have an imp ct on the diode's
s rge immu ity
6 Test equipment
Test eq ipment s al conform to the req irements stated in IEC 610 0-4-2:2 0 , Clau e 6
u in the dis harge electrode for contact dis harges The dis harge return con ection from
the s rge generator s al b con ected to a grou din bloc desig ed to ac ommodate the
DUT samples, takin into ac ou t sp cin req irements that may b req ired for formed
le d as s own in Fig re 1 Multiple DUT samples may b con ected to a sin le grou din
bloc
The eq ipment s al b ca a le of p sitive p larity s rges (with resp ct to e rth grou d),
con u ted in a sin le-s rge mode, an with a voltage that can b in remented in 5 kV ste s
from 5 kV to a recommen ed 3 kV or hig er ca a i ty Eq ipment havin a s rge voltage
l mitation that is les than 3 kV may b u ed, but this may lmit DUT fai ure information an
s bseq ent data analy is for a very s rge-resistant DUT
Fig re 1 – Ex mple of a te t s tup for bypa s diod s
7 Test method
7.1 Preparation
a) Place 10 u con itioned DUTs into an electrical y grou ded fixture s c that the DUT
anode is grou ded an the cathode is exp sed an ac es ible (Fig re 1)
b) Use a multimeter with diode-c ec fu ctional ty to verify that al DUTs are fu ctional in the
forward bias direction an that none are s orted in the reverse bias direction In the event
that a DUT is fou d to b in a non-o erational state b fore test, re lace as neces ary so
IE
Gro n blo k
By a s dio e
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Trang 10c) Place a contact pro e tip (IEC 610 0-4-2:2 0 , Fig re 3 ) onto a s rge generator whose
internal imp dan e conforms to the 3 0 Ω, 15 pF req irements
d) Set the initial s rge voltage to 5 kV in a p sitive p larity with resp ct to e rth grou d
e) En ure eq ipment is set to provide only a sin le s rge p r o eration
f Record the ambient temp rature an relative h midity d rin the testin period For
comp rison purp ses, 2 °C ± 5 °C an 5 % ± 10 % RH are recommen ed
7.2 Surge te ting
a) Con u t one s rge on the first DUT The tip of the contact pro e s al b in contact with
the electrical le d as close to the DUT protective b d as p s ible Ke p trac of time
ela sed as e c DUT is tested
b) Re e t ste a) on the next DUT u ti al ten have b en tested on e
c) Re e t s rge testin , ste s a) an b), unti e c DUT has ac umulated a total of ten
in ivid al s rges Wait, if neces ary, to en ure that 10 s, or more, of s rge relaxation time
has ela sed b fore re e tin the s rge test on an DUT
d) Use a multimeter with a diode-c ec fu ction to determine if al DUTs are fu ctional in the
forward bias direction an do not ex ibit a s ort circ it in either forward or reverse bias
Remove any diodes that have fai ed from the test setup an note the s rge voltage at
whic the fai ure oc ur ed
e) In re se the s rge eq ipment p tential by 5 kV (p sitive p larity with resp ct to e rth
grou d) from its previou set in
f Place al remainin diodes b c into their startin orientation (if neces ary) an re e t
ste s a) to d)
g) Re e t ste f , in re sin s rge eq ipment voltage by 5 kV ste s u ti 3 kV or the testin
ca abi ty of the s rge eq ipment is re c ed, whic ever is smaler
8 Data analy is
8.1 Two-parameter Weibul distribution for a alyzin v lta e to fai ure
The two-p rameter Weibul c mulative distribution of the voltage to DUT faiure is writ en as:
퐹(푉)
= 1−ex p�−� �
훽
where
F(V) is the fraction of al u its in the p pulation whic fai by V s rge voltage;
β is the Weibul distribution s a e p rameter;
α is the Weibul distribution c aracteristic lfe p rameter, or the s rge voltage
cor esp n in to F = 1 – 1/e = 0,6 2
A straig t l ne formula of slo e β can b formed by takin the natural logarithm of b th sides
of formula (1) twice yieldin :
ln�ln�
1
1
−퐹(푉)
1