MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 13 ppsx

... 12), North-Holland, New York, 1989. [13a] K. R. Mistry and B. Doyle, ‘AC versus DC hot-carrier degradation in n-channel MOSFETs’, IEEE Trans. Electron Devices, ED-40, pp. 9 6-1 04 (1993). ... measurement’, Solid-state Electron., 27, pp. 95 3-9 62 (1984). See also related papers, ibid, pp. 96 3-9 75 and pp. 97 7-9 88 (1984). [17] M. Kuhn, ‘A quasi-static technique f...

Ngày tải lên: 13/08/2014, 05:22

... df Qh Y <h VTO nMOST p-type - +- +++ pMOST n-type - -+ - (for metals and n+ polysilicon gate) - - (for metals and n+ polysilicon gate) + (for p+ polysilicon gate) (tax ... distribution and thickness of the inversion layer of a MOS field-effect transistor’, Solid-State Electron., 13, pp. 130 1-1 309 (1970). [I71 K. H. Zai...

Ngày tải lên: 13/08/2014, 05:22

... + + pMOST - - - + terminal voltages as drain-source voltage Vds( = V, - VJ, gate-source voltage V,,( = V, - V,), and bulk-source voltage vb,( = vb - Vs). For normal DC ... 2 Basic Semiconductor and pn Junction Theory The variables F,,F, and F3 are F, =- *bi [l -( 1 - F,)&apos ;-& quot;] (1 -4 F2 = (1 - F,...

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... Structure and Operation ~i 1; L 6i! - - - - - - - - - Fig. 3.3 1 Cross-section showing overlap capacitances between the source/drain and the gate which give rise to C,,, and CGDo ... order expression for Rsp, based on the assumption of uniform doping 128 4 MOS Capacitor I- -t > O O+ -0 .6 1 A1 (p-Si n+ Po~y(p-si) -o...

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... >" ;- I 5 0.4 lY I bO.3 195 1'1'1'1'1~1'1'1~ I - Nb = 2 X 10'"cm-3 - - - - - W=20 m - f"\L "A&ING - I I 1 ... both pMOST and nMOST devices, a general expression for the threshold voltage can be written as (5.63) where the + and - signs are for n- and p-chan...

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... nonuniformly doped MOSFETs’, IEEE Trans. Electron Devices, ED-31, PP. 30 3-3 07 (1984). [13] P. Ratnam and C. A. T. Salama, ‘A new-approach to the modeling of nonuniformly doped short-channel ... model for drain-induced barrierlowering and drain-induced high electric field in a short-channel MOSFET , Solid-State pp. 11 8-1 27 (1989). Electron., 30, pp. 50 3-3 11 (1...

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... form that at first glance appears different. 6.7 Short-Geometry Models 3 - 2- - a 9- W- (7 5 9 1.75 Q t- 6 !I 3 t- 6 fJY 0.5 293 I = 1.31 x 104V/cm a= 1 .13 0 - ... needs 2- or 3-D analysis to account for short-channel and/ or narrow-width behavior. However, for circuit models we invariably modify the 1-D equations developed ear...

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... 308 3 .O 6 MOSFET DC Model I I 1 I I I pMOST toX = 105 A W,/L, = 10l0.5 v,, = -4 v h c E 4 v U I 1 .o I - -2 v 0.01 -1 - - 7- -1 - - i - I * " ... 6 MOSFET DC Model GATE SAT U R AT 10 N 4 DRAIN 1 L - - - - - - - - - - - D C 0 WY' L 4J-4 Fig. 6....

Ngày tải lên: 13/08/2014, 05:22