english grammar theory and practice for beginners

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Ngày tải lên: 17/05/2016, 09:30

... Data Murphy, Raymond # Grammar in use Contents: [1] Student’s book - [2] Answer key 1 English language - Textbooks for foreign speakers 2 English language - Grammar - 1950- 3 English language - United ... present and past tenses 253 Regular and irregular verbs 254 Spelling 256 Trang 7 INTRODUCTION Grammar in Use is a textbook for intermediate students of English who need to study and practice ... Trang 1 #\ REFERENCE AND PRACTICE FOR INTERMEDIATE STUDENTS OF ENGLISH RAYMOND MURPHY with Roann Altman Consultant: William E Rutherford Trang 2 PUBLISHED BY THE PRESS SYNDICATE

Ngày tải lên: 05/10/2012, 08:22

... 1.11 shows that the standard deviation for typical state of the art dimensions is quite significant, with standard de-viation in the range of 30 mV–50 mV being quite feasible For a chip with many ... also been found that the threshold voltage and other device parameters can shift over the lifetime of the product and not always in the same direction [8] For example, the threshold voltage can recover ... transistors and is caused by the movement of charge in the gate oxide and at the interface Of course in an integrated circuit, each transistor has a unique set of bias conditions over its lifetime and

Ngày tải lên: 21/06/2014, 22:20

... reduced, and forward body bias (in this example, NMOS forward body bias) can be applied to further increase the performance. This combination reduces the guardband needed for maximum temperature and, ... logic levels for correct functionality IN−NOR OUT−NAND ,V 0.15 0.1 V V OUT−NAND ,V IN−NOR 0.2 0.05 0 0 0.2 0.15 0.1 0.05 Logic failure NAND NOR 0.05 V NAND NOR 0.1 0.15 ,V IN−NAND 0.2 OUT−NOR... ... power for the FBB design at the same clock frequency. When the adder is put into standby mode, ZBB is used for the core, and this results in a leakage reduction of 2×. Total power savings for

Ngày tải lên: 21/06/2014, 22:20

... 2must be stronger than the access devices, M5/M6, for correct read opera-tion The transfer curves from NT–NC and NC–NT are shown for various and ground, representing the storable data states, ... Converter Topologies for U-DVS 5.3.2.1 Linear Regulators Low-dropout (LDO) linear regulators [22] are widely used to supply ana-log and digital circuits and feature in several standalone or embedded ... How-ever, the required relative strengths can be enforced; for example, the voltage can be pulled below ground to strengthen the access devices Un-fortunately, both of these strategies involve the

Ngày tải lên: 21/06/2014, 22:20

... simultaneously optimize for both read and write margins in the same operation, as needed in a column-multiplexed design Therefore, row-based voltage manipulation tends to be more suitable for non-column-multiplexed ... A variation of this technique would disconnect the SL during both write and standby operations to achieve power savings, and connect the SL to VSS only during read operations when the extra stability ... causes SRAM cells to be less stable Therefore, the RATs lower WL more when VTN is low, and less when VTN is high, to achieve balance between read margin and read speed 11.2.2 Timing Control Aside

Ngày tải lên: 06/08/2014, 01:21

... active de-skew for reliable low skew clocks, Cache Safe Technology® for robust cache operation, and Foxton Technology® for power management. Traditional test methods are discussed, and the specific ... engine and custom test patterns... voltage, frequency, and thermal testing of the processor this is known as “functional testing” Class testers and device handlers are very complex and ... power supply shorts, shorts and opens on a limited number of I/O pads and basic functionality. Basic functionality testing is performed through special test modes and “backdoor” features that

Ngày tải lên: 06/08/2014, 01:21

... assumes E, = 1.1 1 eV for silicon, 0.67 eV for Germanium, and 0.69 eV for SBD. The temperature exponent factor p equals 3 for silicon and germanium while for SBD its value is 2. ... diode current I, and I, for the two different structures as a function of voltage and knowing A,, Pa, A, and P, for the two structures, we can calculate I,,,, and Iperi using ... (2.76) for Qdif and Id is given by Eq. (2.82). Using Eqs. (2.74) and (2.75) for Cj we get IOVd vd ' Fc($bi. (2.86) 64 2 Basic Semiconductor and pn Junction Theory

Ngày tải lên: 13/08/2014, 05:22

... substrate n-type for pMOST and p-well for nMOST) Another alternative is to form two separate wells (n-well for pMOST and p-well for nMOST) in the primary substrate so that n- and p-device characteristics ... effects on device behavior For increased current drive and hence circuit speed a large W and small L is required It is important to understand what device L and W stand for from the modeling point ... the contact via and the channel region, p , is the sheet resistance per square (n/o) and W is device width For a typical 1 pm CMOS technology, p , = 30 and 6 0 R / O for n+ and p + regions,

Ngày tải lên: 13/08/2014, 05:22

... charge and hence threshold voltage However, such complex models are not suitable for use in circuit simulators For this reason they are not discussed here and details of the equations for Qb and ... (5.37) Solving Eqs (5.38) and (5.39) for N , , and using Eq (5.36) for X , , yields (5.40) where q5i is given by Eq (5.35) This value of N , , is used for N , in Eq (5.29) for the body factor term ... , becomes a function of back bias, and therefore y is no longer a constant but is bias dependent For a uniformly doped substrate N , equals N , , and therefore Eq (5.40) gives N , , = N , Thus,

Ngày tải lên: 13/08/2014, 05:22

... A H Marshak and R Shrivastava, ‘On threshold and flat-band voltages for MOS devices with polysilicon gate and nonuniformly doped substrate’, Solid-state Electron., 1361 M Nishida and M Aoyane, ... evident from curve (a) and (b) (Figs 5.31 and 5.32) which are for Vsb = 3 V and 0 V, respectively n-Channel Devices (nMOST) For n-channel enhancement devices (n' polysilicon gate and p-substrate) ... channel implanted devices, curve (d) is for uniformaly doped device Although both curves (b) and (c) are for enhance- ment devices, curve (b) has higher t0,(300A), and lower surface concen- tration

Ngày tải lên: 13/08/2014, 05:22

... 4, by q5s, and have made use of Eq (6.23) for y and Eq (6.22) for Vq! Remembering that Vcb(y = 0 ) = V,b and Vcb(y = L ) = V,b+ V,,, the inversion charge Q i s and Qid at the source and drain ... calculated and measured drain current for an n-channel depletion device fabricated using an NMOS Fig 6.20 Measured and calculated transfer and output characteristics at different back bias for an ... reality this is not true and I,, has small but finite values for V,, < V r h For the device shown in Figure 6.5 this current is of the order A when V,, approaches Vr, and then decreases exponentially

Ngày tải lên: 13/08/2014, 05:22

... Eqs (6.142), (6.174) and (6.204) for p,, Vds,, and ld, respectively The corresponding I d , - Vd, and I,, - Vgs characteristics for n-channel device are shown in Figures 6.34b and 6.34c, respectively ... drift and diffusion currents simultaneously without distinguishing between the weak and strong inversion regions However, this leads to a more complicated equation for the current Therefore, for ... Vgxl and VgX2 between weak and strong inversion, is modeled by a third order polynomial of the following form [112] I d s J = I d s , w + Ids,s (6.2 1 6) where the coefficients a, b, c and d

Ngày tải lên: 13/08/2014, 05:22

... normalized source and drain charges, Qs and Qd, respectively, as a function of Vds for different Vgs, with and without velocity saturation... V,, = 4.6 and 3.8 V and V,, = OV for a typical ... integration formula. Note The subscript j stands for G, S, D or B for the charge Q and capacitance C, as we are now dealing with the total charge or total capacitance. However, for ... L, and V = Vd,, so that we have Now combining Eq. (7.53) with Eqs. (7.50) and (7.54) and carrying out the integration, we get after lengthy algebra the following expression for QD and

Ngày tải lên: 13/08/2014, 05:22

... where the + and - signs are for n- and p-substrate, respectively, and c h f o and CLfo are values of c h f and C k , respectively, at V, = V,, (9.1 1) This method of determining Cox, and hence ... (4.63) and (4.64) as (9.19) Although Eqs (9.18) and (9.19) are derived for uniform substrate doping, they remain valid for the case of nonuniform doping These are the basic equations for measuring ... Combining Eqs (2.15) and (4.74) and solving for the substrate concentration N yields (9.13) where A, is the MOS capacitor gate area This is a transcendental equation for N and therefore must be solved

Ngày tải lên: 13/08/2014, 05:22

... - 1.1 V for n-channel device with W/L = 510.25 pm) in C-V data for short-channel devices [90] Therefore, one can use Eq (9.75)... true for standard source/drain junctions for large ... by Terada and Muta 1601, was reformulated by Chern et al. [61] and later slightly modified by many others [62]-[68]. It is the most commonly used method for determining AL and has become ... 02 (9.66) where Q1 and d2 are the values for (do/po + R,) for the devices with channel length L,, and Lm2, respectively. In a method proposed by Suciu and Johnston [79], the

Ngày tải lên: 13/08/2014, 05:22

... two minima (at p = 1 and p = 5 ) one of which is the global (at p = 5 ) for finding the global minima of an arbitrary function [20], in practice values for the parameters and observing the parameter ... effort for calculating the Hessian H in order to solve for Ap In general, the Hessian matrix H is difficult to solve with sufficient accuracy For this reason approximations are often used for ... other words, these models have separate equations for linear, saturation and subthreshold regions of the device operation with explicit formulations for threshold voltage, saturation voltage, etc

Ngày tải lên: 13/08/2014, 05:22

... parameters which accounts for length and widths dependence of V F B ; that is, LVFB and WVFB are the corresponding L and W sensitiuityfuctors for V F B and have units of Volts.pm ... voltage (V,,, d f , y , K , and v ] ) and 4 for drain current (Po, U o , U , and n) However, 5 parameters ( v ] , Po, U o , U , and n) depend on bias voltages Vd, and V,, as follows: + ... deviation for each of the model parameters obtained from different dice and wafers Once the mean pi and the standard deviation si for each parameter p i is known, a test for 'outlier'

Ngày tải lên: 13/08/2014, 05:22

... Chapman and Hall, New York, 1987 [16] R E Walpole and R H Myers, Probability and Statisticsfor Engineers and Scientists, McGraw Hill, New York, 1976 [17] C W Helstrom, Probability and Stochastic ... value Note that the symbol p and 0 used here are population mean and population standard deviation in order to distinguish them from the sample mean 2, and sample standard deviation s defined ... function f ( x ) for two different values of standard deviation u = 0.5 and 2 The mean value of x is 3 probability Suppose the process mean of the Vth is 0.5V and that the standard deviation

Ngày tải lên: 13/08/2014, 05:22