requirements elicitation for complex systems theory and practice

... Bank For Strategic Management Theory and Practice 4th Edition by Parnell Chapter 1: Fundamentals of Strategic Management Link download full: https://getbooksolutions.com/download/test-bank-for-strategic-management-theory-and-practice-4th-edition-by-parnell ... 11 The contingency theory perspective on firm performance emphasizes the structure of the industry a True *b False 12 Both industrial organization theory and resource-based theory are incorporated ... strategic planners for creativity and analysis Trang 6b Plans for putting the strategy into action are designed with specificity before it is implemented c Strategic managers understand how the organization’s

Ngày tải lên: 01/03/2019, 15:16

... 11 The contingency theory perspective on firm performance emphasizes the structure of the industry a True *b False 12 Both industrial organization theory and resource-based theory are incorporated ... strategic planners for creativity and analysis b Plans for putting the strategy into action are designed with specificity before it is implemented c Strategic managers understand how the organization’s ... understanding of the firm, its industry, and its strategic challenges In organizations, however, strategies are being formulated, implemented, and controlled simultaneously while external and internal

Ngày tải lên: 02/03/2019, 09:39

... Bank For Strategic Management Theory and Practice 4th Edition by Parnell Chapter 1: Fundamentals of Strategic Management Link download full: http://testbankair.com/download/test-bank-for-strategic-management-theory-and-practice-4th-edition-by-parnell/ ... The contingency theory perspective on firm performance emphasizes the structure of the industry a True *b False 12 Both industrial organization theory and resource-based theory are incorporated ... strategic planners for creativity and analysis b Plans for putting the strategy into action are designed with specificity before it is implemented c Strategic managers understand how the organization’s

Ngày tải lên: 17/12/2020, 17:38

... linear, and X = Rn+ ⇒ LP – If f (x) and all gi(x) are linear, and X = Z+n1 × Rn2+ ⇒ MILP – If f (x) is quadratic and all gi(x) are linear, and X = Rn+ ⇒ QP – If f (x) and all gi(x) are quadratic, and ... Spatial branch-and-bound algorithm for non-convex QP 3 Couenne (Convex Over and Under ENvelopes for Nonlinear Estimation, [Belotti])– Spatial and integer branch-and-bound algorithm for non-convex ... Integer Linear Programs • In practice MIPs are solved via enumeration: – The branch-and-bound algorithm, Land and Doig (1960) – The branch-and-cut scheme proposed by Padberg and Rinaldi (1987) • Given

Ngày tải lên: 09/03/2021, 07:30

... Trang 2Udo Richard Franz AverwegDecision-making support systems Theory and practice Trang 3Decision-making support systems: Theory and practice © 2012 Udo Richard Franz Averweg & bookboon.com ... decision-making This philosophy embodied unique and exciting ideas for the design and Trang 35Decision-making support systems: Theory and practice Decision upport ystems and decision-making processes • Decision ... place for people, business and society Join us. In Germany we are especially looking for graduates as Integration Engineers for • Radio Access and IP Networks • IMS and IPTV We are looking forward

Ngày tải lên: 04/12/2015, 20:09

... what information will be requested, who will request the information, who will supply the information, and when and how the information will be used This makes determining requirements for KMS ... experience, values, contextual information and expert insight that provide a framework for evaluation and incorporating new experiences and information” (Davenport and Prusak 1997, p 5) Prior research ... human-computer interaction, and information science) several ways in which this problem of information overload may be tackled Recent research suggests innovative systems and techniques for dealing with

Ngày tải lên: 30/06/2014, 21:16

... 1.11 shows that the standard deviation for typical state of the art dimensions is quite significant, with standard de-viation in the range of 30 mV–50 mV being quite feasible For a chip with many ... also been found that the threshold voltage and other device parameters can shift over the lifetime of the product and not always in the same direction [8] For example, the threshold voltage can recover ... transistors and is caused by the movement of charge in the gate oxide and at the interface Of course in an integrated circuit, each transistor has a unique set of bias conditions over its lifetime and

Ngày tải lên: 21/06/2014, 22:20

... determine power-performance trade-offs and leakage reduction factors with AVS and ABB Each ring-oscillator uses minimum-sized standard-cell inverters as delay elements and a nand-2 gate for enabling ... Power and Frequency Tuning The ultimate use of the AVS and ABB schemes is for performance tuning with performance being the optimal combination of frequency and power, i.e the lowest power for ... always a need for peak performance In those cases, AVS can be used to lower the supply voltage and to slow down the core’s computing power In fact, operating frequency and supply voltage for a circuit

Ngày tải lên: 21/06/2014, 22:20

... useful for power and delay tuning in the state-of-the-art CMOS technologies We observe the benefits of AVS primarily for low power and of ABB for performance tuning For instance, for a 65nm LP-CMOS, ... previous results for compensating process-dependent frequency and leakage spread The values for frequency, power supply voltage, and leakage current are plotted for ref-erence and tuned process ... Process-dependent performance compensation with ABB A second strategy for compensating frequency and leakage spread is based on using ABB and AVS independently ABB is used to increase the performance of

Ngày tải lên: 21/06/2014, 22:20

... reduced, and forward body bias (in this example, NMOS forward body bias) can be applied to further increase the performance This combination reduces the guardband needed for maximum temperature and, ... using a static technique and are typically guardbanded using either reduced frequency or higher supply voltage This guardbanding is expensive in terms of performance and power and is becoming prohibitive ... 3.4GHz at 1.4V, and total power consumption at 1.2V is 1.3W for a high-activity test Frequency can be increased by 9–22% through application of NMOS and PMOS forward body bias FMAX and power measurements

Ngày tải lên: 21/06/2014, 22:20

... 2must be stronger than the access devices, M5/M6, for correct read opera-tion The transfer curves from NT–NC and NC–NT are shown for various and ground, representing the storable data states, ... relative strengths can be enforced; for example, the voltage can be pulled below ground to strengthen the access devices Un-fortunately, both of these strategies involve the complexity of driving ... Converter Topologies for U-DVS 5.3.2.1 Linear Regulators Low-dropout (LDO) linear regulators [22] are widely used to supply ana-log and digital circuits and feature in several standalone or embedded

Ngày tải lên: 21/06/2014, 22:20

... is shown for a large-scale integrated circuit Emphasis is placed on the development of the target performance and testing to ensure that performance is met Trang 6Chapter 7 Sensors for Critical ... systems that track the supply noise, more critical path monitors will be needed, and they will need to be located close to the circuits most respon-sible for dynamic current draw For slower systems, ... “Scheduling for reduced CPU energy,” Proceedings of the Fisrt Symposium on Operating Systems Design and Implementation, November, 1994 Trang 3[4] Pering, T, Burd, T, Broderson, R, “The simulation and

Ngày tải lên: 21/06/2014, 22:20

... resistance and capacitance Rwire and Cwire are assumed to be independent normal random variables with standard deviation... R×CL, and the Horowitz model: delay = t f α + β (9.3) tf Here α and ... extracted for the “half of channel length variation is WID” and “all channel length variation is WID” cases for a 50 nm design with totally random within-die process... entire resistance and ... 4 5 -3 ΔTWID, standard deviations -2 -1 0 1 2 3 4 5 ΔTWID, standard deviations Figure 9.4 PDFs and CDFs for ΔTWID Results are shown in Table 9.3, assuming a path delay standard deviation

Ngày tải lên: 21/06/2014, 22:20

... V and for all scalar c F cðu þ vÞ ¼ cu þ cv for all u, v V and for all scalar c F ða þ bÞv ¼ av þ bv for all v V and for all scalars a, b F ðabÞv ¼ aðbvÞ, 1v ¼ v, and 0v ¼ for all v V and for ... disks and tapes, logic circuits and systems, data entry systems, and distributed storage systems Also new classes of matrix codes, such as error locating codes, spotty byte error control codes, and ... the codes for some specific systems, namely mass memories such as magnetic tapes and disks, logic circuits and systems, data entry systems, and distributed storage systems Chapter 11 covers the...

Ngày tải lên: 03/06/2014, 01:48

... I , and I , for the two different structures as a function of voltage and knowing A,, P a ,A , and P, for the two structures, we can calculate I,,,, and Iperi using Eq (2.81) respectively for ... use of (2.76) for Qdif and Id is given by Eq (2.82) Using Eqs (2.74) and (2.75) for Cj we get vd ' Fc($bi (2.86) Basic Semiconductor and p n Junction Theory 64 The variables F,,F, and F3 are F, ... temperature SPICE assumes E , = 1.11 eV for silicon, 0.67 eV for Germanium, and 0.69 eV for SBD The temperature exponent factor p equals for silicon and germanium while for SBD its value is From Eq (2.91),...

Ngày tải lên: 13/08/2014, 05:22

... Structure and Operation (primary substrate p-type for nMOST and n-well for pMOST) or a p-well process (primary substrate n-type for pMOST and p-well for nMOST) Another alternative is to form two ... between the contact via and the channel region, p , is the sheet resistance per square (n/o) and W is device width For a typical pm CMOS technology, p , = 30 and R / O for n+ and p + regions, respectively ... device behavior For increased current drive and hence circuit speed a large W and small L is required It is important to understand what device L and W stand for from the modeling point of view 3.7.1...

Ngày tải lên: 13/08/2014, 05:22

... solve for the MOS capacitance at flat band, called thepat band capacitance C f b ,we need to use Eq (4.48) for Q , or Eq (4.57) for C, For < we have e - + s >> e C + f > e - + f + sand therefore, ... expression for Q, that is valid for all the regimes of device operation by including both the holes and electrons and thus solving the Poisson Eq (2.41) Using Eqs (4.33) for n and p and noting ... curve for a uniformly doped substrate is straightforward as discussed in section 4.3 However, for a nonuniformly doped substrate one needs to solve Poisson’s equation numerically using the nonuniform...

Ngày tải lên: 13/08/2014, 05:22

... charge and hence threshold voltage However, such complex models are not suitable for use in circuit simulators For this reason they are not discussed here and details of the equations for Qb and ... (5.37) Solving Eqs (5.38) and (5.39) for N,, and using Eq (5.36) for X , , yields (5.40) where q5i is given by Eq (5.35) This value of N , , is used for N , in Eq (5.29) for the body factor term ... N,, becomes a function of back bias, and therefore y is no longer a constant but is bias dependent For a uniformly doped substrate N , equals N , , and therefore Eq (5.40) gives N,, = N , Thus,...

Ngày tải lên: 13/08/2014, 05:22

... (a), (b) and (c) are for channel implanted devices, curve (d) is for uniformaly doped device Although both curves (b) and (c) are for enhancement devices, curve (b) has higher t0,(300A), and lower ... capacitance and is obtained by differentiating d the bulk charge Qb For example, for a uniformly doped substrate, we can write Cd = Y C O X 2d+Ti,b' (5.110) On the other hand, Yang and Chaterjee's ... sequently Tot,, (a) and (b) (Figs 5.31 and 5.32) which are for Vsb = V and V, respectively n-Channel Devices (nMOST) For n-channel enhancement devices (' n polysilicon gate and p-substrate) &D,,/dT...

Ngày tải lên: 13/08/2014, 05:22

... 4, by q5s, and have made use of Eq (6.23) for y and Eq (6.22) for Vq! Remembering that Vcb(y 0) = V b and Vcb(y L) = = , = V,b+ V,,, the inversion charge Q i s and Qid at the source and drain ... mobility model is &e;t (6.143) where d1 and 8, are fitting parameters, and m = for electrons and m = for holes At lower fields where fixed oxide charge scattering and Coulomb scattering are important, ... value lies between and 0.5 and represents the contribution to the field due to drain voltage The exponent v is approximately 0.25 for n-channel and 0.15 for p-channel devices [SO] For devices in...

Ngày tải lên: 13/08/2014, 05:22