Iec 61189 2 721 2015

Test met hods for elect rical mat erials, print ed boards and ot her int erconnect ion st ruct ures and assembl es – Part 2- 721: Test met hods for mat erials for int erconnect ion st ru

Test met hods for elect rical mat erials, print ed boards and ot her int erconnect ion

st ruct ures and assembl es –

Part 2- 721: Test met hods for mat erials for int erconnect ion st ruct ures –

Measurement of relative permit t ivity and loss t angent for copper clad laminat e

at microwave f equency using spl t post dielect ric resonat or

Mét hodes d'essai pour les mat ériaux électriques, les cart es imprimées et aut re

st ruct ures d'int erconnex ion et ensembles –

Part ie 2- 721: Mét hodes d'essai des mat ériaux pour st ruct ures d'int erconnex ion –

Mesure de la permit t ivit é relat ive et de la tangent e de pert e pour les st rat ifiés

recouvert s de cuivre en hy erréquences à l'aide d'un résonat eur diélect rique

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Test met hods for elect rical mat erials, print ed boards and ot her int erconnect ion

st ruct ures and assembl es –

Part 2- 721: Test met hods for mat erials for int erconnect ion st ruct ures –

Measurement of relative permit t ivity and loss t angent for copper clad laminat e

at microwave f equency using spl t post dielect ric resonat or

Mét hodes d'es ai pour les mat ériaux électriques, les cart es imprimées et aut res

st ruct ures d'int erconnex ion et ensembles –

Part ie 2- 721: Mét hodes d'ess i des mat ériaux pour st ruct ures d'int erconnex ion –

Mesure de la permit t ivit é relat ive et de la tangent e de pert e pour les st rat ifiés

recouvert s de cuivre en hyper réquences à l'aide d'un résonat eur diélect rique

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FOREWORD 4

1 Sco e 6

2 Test sp cimen 6

2.1 Sp cimen size 6

2.2 Pre aration 7

2.3 Markin 7

2.4 Thic nes 7

3 Eq ipment a p ratu 7

3.1 General 7

3.2 Vector network analy er (VNA) 8

3.3 SPDR test f i ture 8

3.3.1 General 8

3.3.2 Parameters 8

3.3.3 Freq en y 8

3 4 Verify u it

9 3.5 Micrometer 9

3.6 Circ latin oven 9

3.7 Test c amb r 9

4 Proced re 9

4.1 Precon itionin 9

4.2 Testin of relative p rmitivity an los tan ent at ro m temp rature 9

4.2.1 Test con ition 9

4.2.2 Pre aration 9

4.2.3 Fixture 10 4.2.4 Con ection to VNA 10 4.2.5 VNA p rameter 10 4.2.6 Freq en y an Q-f actor without sp cimen 10 4.2.7 Micrometer 10 4.2.8 Set in the sp cimen 10 4.2.9 Freq en y an Q-f actor with sp cimen 10 4.2.10 Comp rison 10 4.2.11 Calc lation 1

4.2.12 Chan e the sp cimen 12

4.2.13 Chan e in test f req en y 12

4.3 Testin of relative p rmitivity an los tan ent at varia le temp ratures 12

4.3.1 Test con ition 12

4.3.2 Pre aration 12

4.3.3 Fixture 12

4.3.4 Con ection to VNA 12

4.3.5 VNA p rameter 12

4.3.6 Temp rature in the c amb r 12

4.3.7 Freq en y an Q-f actor without sp cimen 12

4.3.8 Micrometer 12

4.3.9 Set in of the sp cimen 13

4.3.10 Freq en y an Q-f actor with sp cimen 13

4.3.12 Option 13

4.3.13 Thermal co ff i ient 13

4.3.14 Chan e in test f req en y 14

5 Re ort 14

5.1 At ro m temp rature 14

5.2 At varia le temp rature 14

6 Ad itional information 14

6.1 Ac urac 14

6.2 Maintenan e 14

6.3 Maters to b aten ed 15

6.4 Ad itional information con ernin fixtures an res lts 15

6.5 Ad itional information on K

ε (ε

r ,h) an p

es 15

An ex A (informative) Example of test f i ture an test res lt 16

A.1 Example of test f i ture 16

A.2 Example of test res lt 16

An ex B (informative) Ad itional information on K

ε (ε

r ,h) an p

es 19

Biblogra h 2

Fig re 1 – Sc eme of SPDR test f i ture 6

Fig re 2 – Comp nent diagram of test s stem 8

Fig re 3 – Sc eme of the c an e of resonan e f req en y with or without the sp cimen 10 Fig re A.1 – Test fixture 16 Fig re A.2 – Relative p rmitivity vers s f eq en y (laminate of Dk 3,8 an thic nes 0,51 mm) 1

7 Fig re A.3 – L s tan ent vers s f req en y (laminate of Dk 3,8 an thic nes 0,51 mm) 17 Fig re A.4 – Curve of relative p rmit ivity an los tan ent at varia le temp ratures (laminate of Dk 3,8 an thic nes 0,51 mm) 18 Fig re B.1 – K ε (ε r ,h) vers s relative p rmitivity at dif ferent sample thic nes es 19 Fig re B.2 – Distribution of the electric f ield of the spl t dielectric resonator (side view of the dielectric resonators) 2

Fig re B.3 – Distribution of the electric f ield of the spl t dielectric resonator ( o view b twe n the dielectric resonators) 21

Fig re B.4 – p es vers s relative p rmitivity at dif ferent sample thic nes es 21

Ta le 1 – Sp cimen dimen ion 7

Ta le 2 – SPDR test fixture’s p rameter 9

Ta le B.1 – Res lts of me s rements of diff erent materials u in a 10 GHz SPDR 2

INTERNATIONAL ELECTROTECHNICAL COMMISSION

_

Part 2-721: Test methods for materials f or interconnection structures –

Measurement of relative permit ivity and loss tangent f or copper clad

laminate at microwave frequency using spl t post dielectric resonator

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International Stan ard IEC 61 8 -2-7 1 has b en pre ared by IEC tec nical commit e 91:

Electronic as embly tec nolog

The text of this stan ard is based on the f ol owin doc ments:

Ful inf ormation on the votin for the a proval of this stan ard can b f ou d in the re ort on

votin in icated in the a ove ta le

A lst of al p rts in the IEC 61 8 series, publ s ed u der the general title Test met hods for

ele tric l materials, printed b ards a d oth r i nt erc n e t ion stru tures a d as emblies, can

b f ou d on the IEC we site

Future stan ard in this series wi car y the new general title as cited a ove Titles of existin

stan ard in this series wi b updated at the time of the next edition

This publ cation has b en draf ted in ac ordan e with the ISO/IEC Directives, Part 2

The commit e has decided that the contents of this publ cation wi remain u c an ed u ti

the sta i ty date indicated on the IEC we site u der "ht p:/we store.iec.c " in the data

related to the sp cific publ cation At this date, the publ cation wi b

• reconfirmed,

• with rawn,

• re laced by a revised edition, or

IMPORTANT – The 'colour inside' logo on th cov r pa e of this publ c tion in ic te

that it contains colours whic are considere to be us f ul f or the cor e t

understa din of its conte ts Us rs s ould theref ore print this doc me t using a

colour printer

TEST METHODS FOR ELECTRICA L MATERIA LS, PRINTED BOARDS AND

Part 2-721: Test methods for materials f or interconnection structures –

Measurement of relative permit ivity and loss tangent f or copper clad

laminate at microwave frequency using spl t post dielectric resonator

This p rt of IEC 61 8 outl nes a way to determine the relative p rmitivity (ε

r

tan ent ( an ) (also cal ed dielectric con tant (Dk ) an dis ip tion factor (Df) of co p r clad

laminates at microwave f req en ies (fom 1,1 GHz to 2 GHz) u in a spl t p st dielectric

dista c b twe n th metal e closures of h f ixture;

D intern l diameter of h metal e closures;

L intern l h ig t of h metal e closures;

Thre sp cimen f or the test at ro m temp rature an one sp cimen for the test at varia le

temp ratures are req ired f or e c SPDR test fixture for this test Ta le 1 s ows the

Within the l mits of the test fixture, the thic er the sp cimen is, the les er or oc urs in the

me s rements Thin sp cimen can b stac ed up to a minimum of 0,4 mm to improve

me s rement ac urac

NOT Air g p b twe n th s mple a d f i ture d n t af fe t th me s reme t

The comp nent diagram of the test s stem is s own in Fig re 2

Figure 2 – Compon nt dia ram of te t s stem

3.2 Ve tor network a alyzer (VNA)

The f ol owin values are req ired:

a) The feq en y ran e of VNA s al b 5 0 MHz to 2 GHz

b) The d namic ran e of VNA s al b more than 6 dB

Table 2 – SPDR te t f ixture’s parameter

The verify u it in lu es the fol owin :

a) Stan ard referen e sample, f or example, sin le-cry tal q artz or eq ivalent sample

Al sp cimen s al b con itioned at (2 ± 2) °C an (5 ± 5) % RH for at le st 2 h prior to

testin However, if a sp cimen has recently b en etc ed or exp sed to ex es ive moisture, it

s ould b dried in an air circ latin oven for 2 h at 10

5

2+

4.2.3 Fix ture

Select an SPDR test fixture in ac ordan e with the test f req en y The sp cimen size an

thic nes s al comply with the req irements sp cified in Ta le 1 F r example, if the test

f req en y is 10 GHz, a SPDR test fixture with 10 GHz nominal f req en y s ould b selected

The s p orted sp cimen size is 8 mm × 8 mm an the maximum thic nes of sp cimen is

no more than 0,9 mm

4.2.4 Conne tion to VNA

Con ect the SPDR test fixture to the VNA The test fixture s al b ke t horizontal

4.2.5 VNA parameter

Set the VNA p rameters ac ordin to the man f acturer's in tru tion an the nominal

f req en y of the SPDR fixture

4.2.6 Fre ue c a d Q- a tor without spe ime

Me s re the resonan e feq en y (f

0) an Q-actor (Q

0) values of the empty resonator

s) of the resonator containin the

sp cimen

4.2.10 Comparison

The s heme of the c an e of resonan e f req en y with or without the sp cimen is s own in

S

Empty reso ator

Reso ator c ntainin

th sp cime

Reso a c f re u n y

IEC

4.2.1 Calc lation

Calc lation of relative p rmitivity an los tan ent at ro m temp rature

Relative p rmit ivity an los tan ent at ro m temp rature s al b calc lated as folows It is

recommen ed to u e the computer software provided by the eq ipment s p l er for

calc lation

4.2.1 2 Relativ permit ivity

The relative p rmitivity (ε

r

s al b calc lated ac ordin to Eq ation (1)

( h)Kh

ff

,1

r0

s0

r

εε

r

and h For a f i ed resonant cavity, its phy ical p rameters (size,

dielectric resonators ε

r

s ould have b en identif ied K

ε(ε

r,h) is pre-computed an

ta ulated by electromag etic field simulation with the strict Rayleig -Ritz method

Put the empty SPDR f req en y (f

0), the resonant f req en y with dielectric

sp cimen (f

s) an the thic nes of the sp cimen (h) u der test into Eq ation (1)

Enter a simi ar arbitrary value of the relative p rmitivity of the sample, an u e a

s c es ive a proximation algorithm After several iteration , en the calc lation

when the relative er or of the last two calc lated relative p rmit ivities is les than

0,1 % The last calc lated data is taken as the relative p rmit ivity of the sp cimen

Some ad itional inf ormation is s own in An ex B

DR1

S

t an

p

QQ

is the Q-actor de en ing on dielectric los es in the dielectric p sts f or the fixture

containin the sp cimen;

p

e

is the electromag etic energ fi in f actor of the sp cimen Af ter identifyin the

ph sical p rameters of the resonant cavity, the electromag etic energy fi in factor

p

ecan b determined by electromag etic field simulation For a fixed resonant

cavity, p

e

is a con tant value Some ad itional inf ormation is s owed in An ex B

4.2.12 Cha ge the spe ime

Me s re the two remainin sp cimen by re e tin ste s 4.2.6 throu h 4.2.1

4.2.13 Cha ge in te t fre ue c

If another test feq en y is selected, c an e the SPDR test f i ture in ac ordan e with the test

f req en y Then re e t ste s 4.2.3 throu h 4.2.12

4.3 Te ting of relativ permit ivity a d los ta ge t at v riable temperature

Select an SPDR test fixture in ac ordan e with the test f req en y The sp cimen size an

thic nes s al comply with the req irements sp cified in Ta le 1 F r example, if the test

f req en y is 10 GHz, an SPDR test fixture with 10 GHz nominal f eq en y s ould b selected

The s p orted sp cimen size is 8 mm × 8 mm an the maximum thic nes of the sp cimen

is no more than 0,9 mm

4.3.4 Conne tion to VNA

Con ect the SPDR test f i ture to the VNA The test f i ture s al b ke t in a horizontal

p sition in the test c amb r

0(T) of the empty resonator

The resonan e p ak s ould b b twe n – 0 dB an – 5 dB; adju t the p sition of the

coupl n lo ps to ac ieve this whi st en urin their p sition is s mmetrical

When me s rin the Q- actor, the f eq en y sp n of the VNA s ould b adju ted s c that it

is b twe n 1 0 % an 2 0 % of the ful width at half maximum of the resonant c rve

4.3.8 Micrometer

Use a micrometer to me s re the thic nes of the sp cimen, an record as h

4.3.9 Set ing of the spe ime

The en ironmental test c amb r s al b returned to ro m temp rature In ert the sp cimen

into the test fixture The side with markin is f ace up an the ed e of this side has to b

al g ed with the fixture ed e

4.3.10 Fre ue c a d Q- a tor with spe ime

Re e t ste 4.3.6 Me s re the resonan e f req en y f

s(T) an Q-actor Q

s(T) of the resonator

with the specimen at temp rature T

When me s rin the Q- actor, the f eq en y sp n of the VNA s ould b adju ted s c that it

is b twe n 1 0 % an 2 0 % of the f ul width at half maximum of the resonant c rve

4.3.11 Calc lation

Fol ow ste 4.2.1 an calc late the value of the relative p rmit ivity Dk(T) an the los

tan ent Df(T) at temp rature T

4.3.12 Options

If another test temp rature is selected, re e t ste s 4.3.6 throu h 4.3.1

4.3.13 Thermal coef f icie t

4.3.13.1 Ge eral

Thermal co ff i ient of elative p rmitivity an thermal co ff i ient of los tan ent

4.3.13.2 Relativ permit ivity

The thermal co f ficient of the relative p rmitivity ε

r(brief f or TCε

/°C General y, the

relative p rmit ivity of a sp cimen at its b se temp rature T

ref

of 2 °C is u ed as the b se

relative p rmitivity Dk(T

ref For temp rature T, TCε

ref

r

TDkT

T

TDkTDk

/°C;

T is the test temp rature, in °C;

T

ref

is the b se temp rature, in °C;

Dk(T) is the relative p rmit ivity at temp rature T

4.3.13.3 Loss ta ge t

The Thermal co f ficient of tan (TC tan ) is the c an e rate of the los tan ent p r

temp rature (every in re se or decre se 1 °C) The u it of TC tan is 10

–6

/°C General y, the

los tan ent of the sp cimen at b se temp rature T

ref

of 2 °C is u ed as the b se los

tan ent Df(T

ref F r temp rature T, TC tan is calc lated ac ordin to Eq ation (4)

refref

ref

t an

TDfT

T

TDfTDf

where

TC tan is thermal co ff i ient of tan , in p m/°C;

T is the test temp rature, in °C;

T

ref

is the b se temp rature, in °C;

Df(T) is the los tan ent at temp rature T;

Df(T

ref

is the los tan ent at temp rature T

ref

4.3.14 Cha ge in te t fre ue c

If another test f req en y is selected, c an e the SPDR test fixture in ac ordan e with the test

f eq en y Then re e t ste s 4.3.3 throu h 4.3.13

5.1 At room temperature

For ro m temp rature tests, re ort the folowin :

a) test en ironment ( emp rature, h midity);

b) test f req en y;

c) the values an the average values of the relative p rmit ivity an los tan ent at test

f req en y;

d) the precon itionin of the sp cimen;

e) an anomal es in the test or variation fom this test method

5.2 At v riable temperature

For varia le temp rature tests, re ort the f ol owin :

a) test temp rature (T) an b se temp rature (T

f ) if more than one test temp rature is neces ary, re ort the c rve diagram of the relative

p rmitivity an los tan ent in ac ordan e with the temp rature variation;

6.3 Mat ers to be at e de

To prevent damage to the test f i ture b cau e of the varia le temp rature tests, verify the

test s stem reg larly with a stan ard referen e sample F r example, single-cry tal q artz is

u ed as the stan ard referen e sample of thic nes 0,4 mm The deviation of the relative

p rmitivity me s rement b twe n the test res lt an the nominal value of the stan ard

ref eren e sample s al b les than ± ,7 %, whi e the deviation of the los tangent s al b

les than ± × 10

−

6.4 Additional inf ormation con erning fixture a d re ults

An example of a test fixture an test res lt is s own in An ex A

6.5 Additional inf ormation on K

ε(ε

r,h) a d p

e

Some ad itional inf ormation on K

ε(ε

r,h) an p

e

is s own in An ex B

Annex A

(inf or mative)

Example of test fixture and test result

A 1 Ex mple of test f ixture

Fig re A.1 s ows a picture of an SPDR f i ture at 5 GHz Uti ze a 3,5 mm f emale-to- emale

ada ter to con ect the co xial ca le an the SPDR test f i ture

An SPDR fixture has a coupl n lo p on b th en s to adju t the coupl n co f ficient The

maximum thic nes of the sp cimen of this fixture is 2 mm

Fig re A.1 – Te t f ixture

A 2 Ex mple of test result

Fig re A.2 an Figure A.3 s ow the typical me s rement of relative p rmitivity an los

tan ent at microwave f req en ies (fom 1,1 GHz to 19 GHz) for a co p r clad laminate of ε

r

3,8 Fig re A.4 s ows the c rve diagram of relative p rmit ivity an los tan ent at varia le

temp ratures (fom −12 °C to 1 0 °C) f or a co p r clad laminate of ε

Figure A.2 – Relative permit ivity v rs s fre ue c

(laminate of Dk 3,8 a d thic ne s 0,51 mm)

Figure A.3 – L s ta ge t v rs s fre ue c

(laminate of Dk 3,8 a d thic ne s 0,51 mm)

IEC

DK 3,8 4,0

Figure A.4 – Curv of relativ permit ivity a d los ta ge t

at v riable temperature (laminate of Dk 3,8 a d thic ne s 0,51 mm)

Annex B

(inf or mative)

Additional inf ormation on K

ε (ε

r,h) and p

e

By definition K

ε (ε

r,h) f un tion values are sp cified for a given resonant fixture an with f i ed

s0

r

)1(,

h

ff

hK

−

−

=

εε

ε

(B.1)

The fu ction K

ε(ε

r,h) is computed an ta ulated f or every sp cif i SPDR Exact resonant

f eq en ies an the res ltin values of K

ε(ε

r,h) are computed f or a n mb r of ε

r

ta ulated Interp lation has b en u ed to compute K

ε(ε

r,h) f or any other values of ε

r

The initial value of K

ε(ε

r,h) in the p rmit ivity evaluation u in Eq ation (1) is taken to b the

same as its cor esp n in value for a given h an ε

r

= 1 Subseq ent values of K

ε(ε

r,h) are

f ou d for the s bseq ent dielectric con tant values o tained in the iterative proced re

Becau e K

ε(ε

r,h) is a slowly varyin fu ction of ε

r

an h, the iteration u in Eq ation (1)

con erge ra idly Fig re B.1 s ows K

ε(ε

r,h) vers s relative p rmitivity at dif ferent sample

thic nes es for a 10 GHz SPDR

Figure B.1 – K

ε(ε

r,h) v rs s relative permit ivity at

dif fere t s mple thic ne s s

By definition the p

evalue is sp cified for a given resonant fixture an with f i ed values ε′

r

an h as f ol ows:

Khp

rr,

1es

εε

The Rayleig -Ritz method p rmits to compute the p

evalue for a given resonant stru ture

These p rameters have b en computed for a n mb r of h an ε′

r

= 1 mm an a relative p rmit ivity of a dielectric resonator = 3 , the distribution of the electric

f ield comp nent E in the splt dielectric resonator o eratin at a nominal f req en y (without

sample) of 10 GHz is s own in Fig re B.2 an Fig re B.3

Fig re B.4 s ows p

evers s relative p rmit ivity at dif ferent sample thic nes es

For a 10 GHz SPDR with dif ferent samples, the p rameters are s own in Ta le B.1

12,4 7

> 105

12,3 2

> 105

16 0 0 Halo e - e FR4

Figure B.2 – Distribution of the ele tric field of the spl t diele tric re onator

(side view of the diele tric re onators)

IE C

Figure B.3 – Distribution of the ele tric field of the spl t diele tric re onator

(top view betwe n the diele tric re on tors)

10-4

Bibl ogr aphy

[1] Nis ikawa, T Wakino, K Tanaka, H Is ikawa, Y "Diel ectric Reso at or Method for

Su strat es," Microwave Conferen e, 19 0 2 th Euro e n, vol.1, p 5 1-5 6, 19 0

[2] Maziers a, J Krupka, J Jaco , M.V L den ov, D "Compl ex p rmittivity

me sureme ts at variabl e t emp rat ures of low los d iel ectric su strates empl oying sp t

p st a d single p st dielectric reso ators," Microwave Symp sium Digest, 2 0 IEEE

MT -S International, vol.3, p 18 5-18 8, 2 0

[3] Maziers a, J Jaco , Mohan V Har in , A Krupka, J Barnwel , P Sims, T

“Measureme ts of los tan e t a d rel ativ p rmit tivity of LTCC c ramics at v rying

temp ratures a d fe u n ies,” Journal of the Euro e n Ceramic Society, vol 2 , is ue

14, p 2 1 – 615, 2 0

[4] Krupka, J Clarke, R.N Roc ard, O.C Gregory, A.P "Spl it p st d iele t ric reso ator

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[5] Krupka, J Gregory, A.P Roc ard, O.C Clarke, R.N Rid le, B Baker Jarvis, J

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2 01

[6] Krupka, J Geyer, R G Baker Jarvis, J Ceremu a, J "Measureme ts of the c mplex

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