Bsi bs en 60747 5 1 2001 (2003)

3.5 Ultra iolet ra ia tion IEV8 5-01-0 , specialz d Optical ra iation for which the wav elengths are shorter than those for v isible rad iation.. 4.2 Sem ic nductor photo m it er A semic

The European Stand rd EN 6 7 7-5-1:20 1, and the incor poration of

amendmen t A1:20 2 and A2:20 2, has the status of a Br itish Stand rd

ICS 3 2 0

This Br itish Stan ard,ha in g

b en pre ared u der the

directionof the

Electrotech ical Sector Bo rd,

was publshed u der the

author ity of the Stan ards

b the European Commit e for Electrotechnical Stand rd ization (CENELEC)

It is id entical with IEC 6 7 7-5-1:19 7, including amen dments 1:20 1

and2:20 2, publ shed b the International Electrotech ical

Commis ion( IEC)

Th e start and fin ish of tex t introduced or altered b amendment is indicated in

the text b ta s ?? Tag s indicating changes to IEC text car y the n mber

of the IEC amendment For ex mple, text altered b IEC amendment1 is

indicated b ??

From 1 J nuar y19 7, al IEC publ cations ha e the n mber 6 0 0 ad ded to

the old n mber Fo instance, IEC27-1 h as be n r enumbered as IEC6 027-1

For a period of time during the chang e ov er f om one numbering system to the

other, publcations ma contain id entifier f om both sy stems

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in this document ma be fou d in the B SI Ca ta logue u der the section entitled

“ International Stand r ds Cor espondence Index ”, or b using the “ Sear h”

faci ty of the B SI Electr onic Ca ta l ogue or ofBritish Stand rds Onlne

This publcation d oes not purport to includ e al the neces ary provisions of a

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f om leg al obl g ations

Summ ary of pa g es

This document comprises a font cov er, an inside font cov er,the EN title p ge,

p ges 2 to 28, an inside b ck cov er and a b ck cov er

The BSI copy rig ht notice display ed in this document ind icates when th e

document was last i ssued

Am endments is ued sinc publ cation

13 41 24 Decembe 20 1 Implementation of the European

Stand ard Also, se national foreword

ICS 3 2 0

Englsh v er ion

(includ es amendments A1:20 2 +A2:20 2)

( enthält Änderu g en A1:20 2 +A2:20 2)

( IEC 6 7 7-5-1:19 7 + A1:20 1 +A2:20 2)

This European Stand rd was a proved b CENELEC on 20 0-1 -01

Amend ment A1 was a prov ed b CENELEC on 20 2-02-01 Amendment A2

was a proved b CENELEC on 20 2-0 -01 CENELEC member are bound to

comply with the CEN/CENELEC Internal Reg ulations which stipulate the

con ditions fo g iv ing this European Stand rd the status of a national stand r d

without any alteration

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respon sibi ty of a CENEL EC membe into its own languag e and notified to the

Central Sec etariat has the same status as the oficial v er ions

CENELEC member are the national electrotech ical commit e s of Austria,

Belg ium, Cz ch Republ c, Den mark, Finlan d, France, Germany , Gre ce,

I eland, Italy, Lu xembourg, Netherlands, Norway , Portug l, Sp in, Sweden,

Switz rland and United King om

European Commit e for Electrotech ical Stand ar dization

Comité Europé n de Nor mal sation Electrotech nique

Europ is hes Komite für Elektrotech is he Normu g

Th e text of the International Stand rd

IEC6 7 7-5-1:19 7, prep red b SC 4 C, Flat

p nel displa devices, of IECTC4 , Semiconductor

dev ices, was submit ed to the Unique A cceptance

Procedure and was a proved b CENELEC as

EN6 7 7-5-1 on 20 0-1 -01 without any

mod ification

Th is stand ard should be rea jointly with

IEC6 7 7-1, EN 620 7-1 and EN 620 7-2

The folowing d ates were fix ed:

Annex es d esig nated “ normativ e” are p rt of the

bod of the stan dard Annexes designated

“ informative” are giv en fo infor mation only In this

stand rd, Annex ZA is normativ e and Annex A is

informative Annex ZA has be n ad ded b

CENELEC

Th e text of amendment1:20 1 to the International

Stand rd IEC6 7 7-5-1:19 7, prep r ed b SC4 E,

Dis rete semiconductor dev ices, of IECTC4 ,

Semiconductor dev ices, was submit ed to th e

Unique Acceptance Procedure and was a prov ed b

CENELEC as amendmentA1 to EN6 7 7-5-1:20 1

on 20 2-02-01 without any modification

The folowing d ates were fix ed:

Foreword to am endm ent A2

The text of document 4 E/20 /FDIS, future

amendment 2 to IEC 6 7 7-5-1:19 7, prep red b

SC4 E, Dis rete semiconductor dev ices, of

IECTC4 , Semiconductor d ev ices, was submit ed

to the IEC-CENELEC p ralel v ote and was

a prov ed b CENELEC as amendmen tA2 to

confl cting with the EN

hav e to be withdrawn ( dow) 20 4-01-01

— latest d te b which th e

amendment has to be

implemented at national

lev el b publ cation ofan

identical national stand rd

or b en dor sement ( dop) 20 3-02-01

lev el b publ cation of an

identical national stand rd

o b endor sement ( dop) 20 3-02-01

— latest d te b which the

national stand rds

confl cting with the

amendment hav e to be

4.1 Semiconductor opto lectronic dev ice 5

4.5 Infared -emit ing diod e ( IRED) 5

4.6 ( Semiconductor) photosensitiv e device 5

4.7 ( Semiconductor) photo lectric detector 5

5.2 Optical port ( of a semiconductor

6 Terms related to rating s and

Annex A ( i formative) Cros references in dex 27

Annex ZA ( normativ e) Normative references to

international publcations with their

cor esponding European publcations 28

Pag e

Fig ure 1a — Dev ice with b re fibre pigtai 7

Figure 1b — Dev ice with fibre pig tai con ector

Figure 2a — Device with window, but without

Figure 2b — Detector with window, but without

Fig ure 2d — IRED with optical port that is not

located on the output window of the p cka e 9

Figure 3 — Non-p ckag ed devices ( emit er or

Figure 5 — Threshold cur ent of a laser diode 13

Fig ure 6 — Rad iation diag ram and related

Figure 7 — Spectral characteristic of

l g ht-emit ing diodes and inf ared-emit ing

Fig ure 8 — Spectral characteristic of laser

Figure 9 — Side-mode sup res ion ratio 17

Fig ure 10 — Emis ion sour e of a laser d iode 18

Figure 1 — Fibre- nput sensitivity S

Th is Part of IEC6 7 7 deals with the terminolog y relating to the semiconductor opto lectronic devices.

2 Norm ative ref rences

The folowing n ormative d ocuments contain prov isions which, through reference in this text, constitute

prov isions of this p rt of IEC6 7 7 At the time of publcation, the editions in dicated were v ald Al

nor mativ e documents are subject to revision, and p rties to agre ments b sed on this p rt of IEC7 7 are

encoura ed to inv estig te the pos ibi ity of a ply ing the most recent ed itions of the nor mativ e documents

indicated below Member of IEC and ISO maintain r eg ister ofcur rently v ald International Stand rds

IEC6 0 0( 731):19 1, Inter na tiona l Electr ote h ica l Voca bula r y (EV) — Cha pter 7 1: Optca l fibr e

commu ica tion

IEC6 0 0( 84 ):19 7, Inter na tiona l Electr ote h ica l Voca bula r y (EV) — Cha pter 845: L ightng

IEC6 6 4-1:19 2, Insula tion co r d ina tion fr equipment wi hin low-v lta ge systems — Par t 1: Pr incipl es,

r equir ements a nd te ts

3.1 (Ele trom a g netic) ra ia tion (IEV8 5-01-01)

1) Emis ion or trans er of energ y in the form of electroma netic wa es with the as ociated photons

2) These electromag netic wa es or these photons

3.2 Optical ra diation ( IEV8 5-01-02)

Electroma netic rad iation of wav elengths ly in g betwe n the region of transition to X-ra s (?1nm) and th e

region of transition to ra io wav es ( ?1 nm)

3.3 Visible radiation (IEV8 5-01-0 )

Any optical ra iation ca a le of causing a v isual sensation d ir ectly

NOT Ther e are no precise lmits for the sp ctral range of visible radiation since the de en up n t he amou t of radiant p wer

a aia le an the resp nsiv ity of the o serv r The lower lmit is generaly taken b twe n 3 0nm an 4 0nm an the up er lmit

b twe n 7 0nm an 8 0nm

3.4 Inf ared ra iation ( IEV8 5-01-0 , specialz d)

Optical ra iation fo which the wav eleng ths are longer than those fo visible r ad iation

3.5 Ultra iolet ra ia tion (IEV8 5-01-0 , specialz d)

Optical ra iation for which the wav elengths are shorter than those for v isible rad iation

3.6 Lig ht ( IEV8 5-01-0 , without note 2 which is not r elev nt)

3.6.1 Perc ived l g ht (se IEV8 5-02-17)

3.6.2 Visible ra iation ( se IEV8 5-01-0 )

NOT Conce t 2 is sometimes used for o tical radiation e ten ing outside the visible rang , but this usa e is not r ecommen ed

3.7 Photo le tric efe t ( from IEV8 5-0 -3 : photo lectric d etector)

Interaction betwe n optical ra iation and mat er resulting in the a sorption of ph otons and the consequent

g eneration of mobie char g e car ier , thereb generatin g an electric potential or cur ent, or a chang e in

electrical resistance, excluding electrical phenomena caused b temperature changes

4 Types ofdevices

4.1 Sem ic nductor opto le tronic devic

1) A semiconductor d ev ice that emits or d etects or that is responsive to coherent or non-coherent optical

ra iation

2) A semiconducto device that uti iz s such ra iation for its internal pur poses

4.2 Sem ic nductor photo m it er

A semiconductor opto lectronic d ev ice that directly conv erts electric energy into optical rad iant energ y

4.3 Sem ic nductor laser

4.3.1 (Semiconduct or) l as r d iode

A semicon ductor diode that emits coherent optical ra iation through stimulated emis ion resulting f om

the recombination of fe electrons and holes when excited b an electric cur ent that ex ce d s the threshold

cur ent of the diode

N T The laser diode is mou ted on a submou t or in a p ckag e with or wit hout couplng me ns ( e.g lens, pigtai

4.3.2 Las r-d iod e mod ule

A module containin g, tog ether with the laser diode, means for an automatic optical and / or thermal

sta i ization of the ra iant output power

4.4 Lig ht-emit ing diode (LED)

A semicond uctor d iode, other than a semiconductor laser, ca a le of emit ing v isible ra iation when excited

b an electric cur ent

4.5 Inf a red-em it ing diode (IRED)

A semiconductor diode other than a semicon ductor laser ca a le of emit in g in frared ra iation when

excited b an electric cur ent

4.6 (Sem ic nductor) photosensitive devic

A semicon ductor dev ice that uti z s the photo lectric efect for detection of optical ra iation

4.7 (Sem ic nductor) photo le tric dete tor

A semicon ductor dev ice that uti z s the photo lectric efect for detection of optical ra iation

4.8 (Sem ic nductor) photoresistor, photo onductive c l ( IEV8 5-0 -3 , specialz d)

A semicon ductor photo lectric detector that uti z s the chang e of electric conductiv ity produced b the

a sorption of optical ra iation

4.9 Photo lement, photovoltaic c l ( IEV8 5-0 -3 )

A ph oto lectric detector that uti iz s the electromotive for e produced b the a sorption of optical rad iation

4.10 Photodiode (IEV8 5-0 -3 )

A photo lectric detector in which a photocur ent is generated b a sorption of optical ra iation in the

neighbourho d ofa PN ju ction betwe n the semiconductor , or of a ju ction betwe n a semiconductor and

a metal

4.1 Phototransistor

A transistor in which the cur ent produced b the photo lectric efect in the neighbourho d of th e

emit er-b se ju ction acts as b se cur rent, which is ampl fied

4.12 Photothyristor

A thyr istor that is d esigned to be trig g ered b optical ra iation

4.13.1 DC input phot ocoupl er/opt ocoupl er

photocoupler/optocoupler consisting at the input of an opto lectronic emit er to which d.c cur ent is

a pled

4.13.2 A C input phot ocoupl er /opt ocoupler

photocoupler/optocoupler consisting at the input of an antip ralel opto lectronic emit er to which a.c

cur ent is a pl ed

4.13.3 phot ot ransist or phot ocoupl er/opt ocoupl er

photocoupler/optocoupler whose photosensitiv e element is a phototransistor

NOT A b se termin al ma or ma not b pro ided

4.13.4 phot od arl ingt on photocoupler /opt ocoupler

photocoupler/optocoupler whose photosensitiv e element is a Darlngton phototransistor

NOT A b se termin al ma or ma not b pro ided

4.13.5 phot ot hy rist or photocoupl er/optocoupl er

photocoupler/optocoupler whose photosensitive element is a phototh yristor

NOT A g ate t er minal ma or ma not b pro ided

4.13.6 phot ot riac photocoupler/optocoupler

photocoupler/optocoupler whose photosensitive element is a phototriac

4.13.7 IC phot ocoupl er/opt ocoupler

photocoupler/optocoupler whose photosensitive element is a photodiode/transistor and an integ rated

cir uit

4.13.8 FET phot ocoupler/opt ocoupler

photocoupler/optocoupler with one or more field-efect transistor ( F ETs) in its output stage

NOT A F T is activ ted b photo-elements or b direct o tical radiation

4.13.9 phot od iode phot ocoupl er/opt ocoupl er

photocoupler/optocoupler whose photosensitive element is a photodiode

4.13.10 IC input phot ocoupler /optocoupler

photocoupler/optocoupler whose input elements consist of an integ rated cir uit and an opto-electronic

emit er.?

5 General terms

5.1 Optical a is

A l ne a out which the princip l r adiation o sensitivity p t ern is cen ter ed

NOT Unles otherwise stated, the o tical a is coincides with the dir ection of ma imum radiation or sensitivity

5.2 Optical port (of a sem ic nductor opto le tronic devic )

A g eometrical config uration,referenced to an external plan e or sur ace of th e d evice, that is used to specify

the optical ra iation emit ed f om an emit ing dev ice or ac epted b a detecting dev ice

NOT The g ometrical configuration shal b sp cified b the man factur er b me n s of geometr ical information,e.g

— location, sha e an size of the ar ea of emis ion or ac e tance;

— angle of emis ion or ace tance;

— other p rameter , e.g.n mer ical a erture of o tical fi br e;

— orientation of o tical ax is

Ex mples:

Sig nification of an otations in the figures:

Ex mple I: D evic s wih pigta il (emiter o d ete tor )

? = emis ion of ac eptan ce an gle

= optical port with diameter D

Ref = reference locus for the definition of the optical port

Fig ure 1a — Devic with bare fibre pig tai

Fig ure 1b — Devic with fibre pig ta il c nne tor at ached

Ex mple I : Pa c ka ged d evic s (emiter o d etec tor ), wi hout pigta il

Fig ure 2a — Devic with window, but without lens

Fig ure 2b — Dete tor with window, but without lens (chip referenc d)

Fig ure 2 — Dete tor with lens

Fig ure 2d — IRED with optical port that is not lo ated on the output window

ofthe packag e

5.3 (Optica l) cla ding ( IEV7 1-02-0 )

Th at dielectric material ofan optical fibre sur ou din g the core

6 Term s r lated to ratings and characteristics

6.1 General

6.1.1 Swit ching t ime

NOT The sp cified lower an up er lmit v lues refer ed to in conce ts 6.1.1.1,6.1.1.2, 6.1.1.3, 6.1.1.4,6.1.1.5 an 6.1.1.6 are

usualy 1 % an 9 % of the ampltu e of the pulses ( se Fig ure 4)

6.1.1.1 Tur n-on d ela y t me t

d(on)

Th e time interv al betwe n the lowe specified v lue on the lea ing edg e of the a pl ed in put pulse and the

lower specified v alue on the lea ing ed g e of the output pulse

6.1.1.2 R is tme t

Th e time interv l betwe n the lower specified v lue and the up er specified v alue on the lea ing edg e of

the output pulse

6.1.1.3 Tur n -on t me t

on

Th e time interv al betwe n the lowe specified v lue on the lea ing edg e of the a pl ed in put pulse and the

up er specified v lue on the lea ing edg e of the output pulse

Th e time interv al betwe n the up e specified v alue on the trai ing edg e of the a pl ed input pulse and the

up er specified v alue on the trai ng ed g e of the output pulse

NOT If the turn-of dela time is main ly d e t o car ier stor ag (e.g.in t he output transistor of a photocoupler), the term “( car rier)

storag e time” an the let ter y mb l t are in use

Fig ure 3 — Non-p ckag ed devic s (em it er or dete tor) without pig tai

6.1.1.5 Fa l l tme t

NOT The t ime i nterv l b twe n the up er sp cified v lue an the lower p cified v lue on the trai ng edg of the output pulse

6.1.1.6 Tur n-o ftme t

of

The time interv l betwe n the up er specified v alue on the trai ng edg e of the a pled input pulse and the

lower specified v lue on the trai ng ed e of the output pulse

6.2.1 Radiant power, luminous flux

6.2.1.1 Rad ia nt power ( fa photoemiter ) ?

e

The ra iant power emit ed f om the optical port of the dev ice

6.2.1.2 Luminous fl ux (fa photoemiter ) ?

v

The luminous flux emit ed f om the optical port of the dev ice

Fig ure 4 — Switching tim es

6.2.2 Eficacie

6.2.2.1 R a d ia n t power efica cy ?

e, ???r a d ia nt efica cy (fa n infr a r ed -emitng d iod e o a l a ser d iod e)

The quotient of the emit ed ra iant power ?

e, b the forward cur ent I

F:

F

?V

F), th e term ma

b sh or tened to “radiant eficacy” or “eficacy”.This is ne rly alwa s p s ible

6.2.2.2 R a d ia n t intensi y efica cy ?

ei( fa n infr a r ed -emitn g d iode o a la ser d iod e)

The quotient of the emit ed ra iant intensity I

e, b the forward cur ent I

F:

The quotient of the emit ed luminous flux ?

v, b the forward cur ent I

F:

e,the ter m ma b shor tened to “lumin ous eficacy” or

“eficacy”.This is ne r ly alwa s p s ible

6.2.2.4 Luminous intensi y efica cy ?

v i(fa lght-emi tng d iod e)

The quotient of the emit ed luminous intensity I

v, b the forward cur ent I

F:

NOT 1 If no ambiguity is lkely to ocur, the sh or ter ter m an let er symb l ma b used

NOT 2 The term “smal signal mod lation eficacy” is in use as synony m

6.2.2.6 Difer enta l r a d iant in tensiy efica cy ?

eid( fa n infr a r ed -emited d iod e o a la ser diod e)

Th e rad iant intensity eficacy for smal -sig nal modulation:

Th e luminous flux eficacy for smal sig nal modulation:

NOT 1 If no ambiguity is lkely to ocur , the shorter term an let er symb l ma b used

NOT 2 The term “ small -sig nal mod lation eficacy” is in use as synony m

6.2.2.8 Difer en tia l lumin ous intensiy efica cy ?

vid( fa light-emit ng d iod e)

The luminous intensity eficacy for smal sig nal modulation:

L

l a r ge-signa l r a d ia nt efica cy (fa n infr a r ed -emit ng

d iod e o a l a ser d iod e)

Th e rad iant power eficacy for large-sig nal modulation:

6.2.2.10 L a r ge-signa l r a d ia nt intensiy efica cy

?

EIL( fa n infr a r ed -emitng d iod e o a l a ser d iod e)

The ra iant intensity eficacy for larg e-sig nal modulation:

NOT If no ambig uity is lkely to oc ur,the shorter ter m an leter sy mb l ma b used

6.2.2.12 La r ge-signa l l uminous intensiy efica cy ?

V IL(fa light-emitng d iod e)

The luminous intensity eficacy for larg e-sig nal mod ulation:

c(fa photoemi tng d iode)

The feq uency at which, for constant modulation depth of the forward cur ent,the demodulated a.c optical

ra iant power has dec eased to 1/2 of its low-f equency v alue

6.2.3.2 La r ge-signa l (mod ul ation) cut-o ffr equency f

C, f

c( fa photoemitng d iod e)

has its fir t ma imum ( se Fig ure 5)

6.2.5 Spat ial rad iat ion diagram and rel at ed characterist ic (o a phot oemit ter)

) = f( ?) ( se Figur e 6 and F ig ure 6 )

Fig ure 5 — Threshold cur ent of a laser diode

6.2.5.2 Ha l f-intensi y a ngle ?

1/2

In a r adiation diagram, the angle within which th e ra iant ( or luminous) intensity is g reater than or equal

to half of the ma imum intensity (se Fig ure 6 )

6.2.5.3 Misa lignment a ngle ? ?

In a rad iation diag ram, the ang le betwe n the direction for max imum ra iant ( or luminous) intensity

( optical a is) and the mechanical a is z ( se Figur e 6 )

6.2.6 Spe t ral charact erist ic (o l ight - emit t ing d iodes and infrared- emit t ing d iod es)

( e Figure 7)

6.2.6.1 Pea k-emis ion wa velength ?

p

Th e wa eleng th at which the spectr al r adiant powe is a max imum

6.2.6.2 ?Spe tr um? ba nd wid th ??

Th e wa eleng th interv l in which the spectr al r adiant powe is g reater o equal to half of its max imum

The v lue of undesired spectral r adiant power ( or luminous flux) in two specified wav eleng th rang es that

l e below and a ov e the peak-emis ion wav elength, ex res ed as a per enta e of the r adiant powe (or

luminous flux) at peak-emis ion wav eleng th

NOT Sp cified v alues refer to the ma imum v lue within e ch of the sp cified wa elength rang s

Fig ure 6 — Radiation diag ram and related characteristics