Bsi bs en 60747 5 2 2001 (2003)

BRITISH STANDARD BS EN 60747 5 2 2001 Incorporating Amendments Nos 1 to BS IEC 60747 5 2 1997 (renumbers the BS IEC as BS EN 60747 5 2 2001) and 2Discrete semiconductor devices and integrated circuits[.]

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a nd 2

The European Stand rd EN 6 7 7-5-2:20 1, with the incor poration of

amendmen t A1:20 2, has the status of a British Stand rd

ICS 3 2 0

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This Br itish Stan ard,ha in g

b en pre ared u der the

directionof the

Electrotech ical Sector Bo rd,

was publshed u derthe

author ity of the Stan ards

Bo rd an comes into efect on

1 J n ary 1 9

ISBN 0 5 0 2 1 4 8

This British Stand rd is the oficial English language ver ion of

EN6 7 7-5-2:20 1, including amen dment A 1:20 2 It is identical with

IEC6 7 7-5-2:19 7, including amend ment 1:20 2

Th e start and finish of tex t introduced or altered b IEC amend ment 1 is

indicated in the text b ta s ??

Th e UK p rticip tion in its prep rat ion was entrusted b Technical Commit e

EPL/47, Semiconductor , to Subcommit e EPL/47/3, Perormance of

opto lectronic semiconductor dev ices and l quid c y stal display s, which has the

r esponsibi ty to:

— aid enquirer to u d er tand th e text;

— present to the responsible internation al/European commit e any

enq uiries on the interpretation, or proposals for change, and ke p the UK

in terestsinformed;

— monitor related international an d European dev elopments and

promulg teth em in the UK

A lst oforg anizations represented on this subcommit e can be obtained on

request to its sec etary

Cros - referenc s

The British Stand r ds which implement inter national or Eur opean

publcations refer ed to in this document ma be fou d in the B SI Ca ta logue

u der the section entitled “ International Stand rds Cor espondence Index”, or

b using the “ Sear h” faci ty of the B SI Electr onic Ca ta l ogue or of British

Stand rds On line

Th is publcation d oes not purport to includ e al the neces ary prov isions of a

contract User are responsible for its cor ect a pl cation

Compl a nc with a British Standard do s not of itself c nfer im m unity

f om leg al obl g ations

Summary of pa g es

This document comprises a font cover, an inside font cover,the EN title p g e,

the EN foreword p ge,the IEC title p g e, p ges i to iv, p ges 1 to 24, an inside

b ck cov er and a b ck cov er

The BSI copy rig ht notice display ed in this document ind icates wh en the

document was last is ued

Am endm ents is ued sinc publ cation

20 2

Implementation of the European Stand ard

Other cor ections indicated b a sidel ne

14 8 17 J n ar y

20 3

Se nation al foreword

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ICS 3 2 0

Englsh v er ion

Par tie 5-2: Dispositif opto lectroniques —

V aleur lmites et car actéristiques es entiel es

(in clut l’amendement A1:20 2)

(CEI 6 7 7-5-2:19 7 + A 1:20 2)

Einz l Halbleiterb uelemente u d integ rierte

Schaltun gen —

Tei 5-2: Opto lektronis he Bauelemente —

Wesentlche Grenz- u d Ken werte

( enthält Änderu g A1:20 2)

( IEC 6 7 7-5-2:19 7 + A1:20 2)

This Eur opean Stand r d was a proved b CENELEC on 20 0-1 -01 an d

amendment A1 was a proved b CENELEC on 20 2-0 -01 CENELEC

member are boun d to comply with the CEN/ CENELEC Internal Reg ulations

which stipulate the conditions for giv ing this European Stand rd the status of a

national stand rd without any alteration

Up-to-d te l sts and biblog ra hical references concerning such national

stand rds ma be obtain ed on a plcation to the Central Sec etariat or to any

CENELEC member

This European Stand rd exists in thre oficial v er ions ( Eng lish, French,

German) A v er ion in any other lang uag e ma e b translation un der the

respon sibi ty of a CENEL EC membe into its own langua e and notified to the

Central Sec etariat has the same status as the oficial v er ions

CENELEC member are the national electrotech ical commit e s of Austria,

Belg ium, Cz ch Republ c, Den mark, Finlan d, France, Germany , Gre ce,

I eland, Ir eland, Italy , Lux embourg , Netherland s, Nor way , Portug l, Sp in,

Sweden, Switz rland and United Kingdom

European Commit e for Electrotech ical Stand ar dization

Comité Europé n de Nor mal sation Electrotech nique

Europ is hes Komite für Elektrotech is he Normu g

Central Se retariat: rue de Stas art 3 , B- 10 0 Brus els

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Th e text of the International Stand rd

IEC 6 7 7-5-2:19 7, prep red b SC 4 C, Flat

p nel displa devices, of IEC TC 4 , Semicond uctor

dev ices, was submit ed to the Unique A cceptance

Procedure and was a proved b CENELEC as

EN 6 7 7-5-2 on 20 0-1 -01 without any

mod ification

Th is stand ard should be rea jointly with

IEC 6 7 7-1, EN 620 7-1 and EN 620 7-2

The folowing d ates were fix ed:

An ex es desig nated normative ar e p rt of the bod

of the stand rd Annex es d esig nated informativ e

are given for infor mation only In this stand r d,

Annex B and Annex ZA are normativ e and Annex A

is informative Annex ZA has be n ad ded b

CENELEC

Foreword to am endm ent A1

The text of document 4 E/20 /FDIS, future

amendment 1 to IEC 6 7 7-5-2:19 7, prep red b

SC 4 E, Dis rete semiconductor dev ices, of

IECTC4 , Semiconductor d ev ices, was submit ed

to the IEC-CENELEC p ralel v ote and was

a prov ed b CENELEC as amendmen t A1 to

EN6 7 7-5-2:20 1 on 20 2-0 -01

The folowin g d tes were fixed:

An exes designated “ normativ e” are p rt of the

bod of the stand rd

In this stand rd, A n nex B and Annex ZA are

normativ e

Annex ZA has be n a ded b CENELEC

— latest d te b which the

endor semen t (dop) 20 2-01-01

national stand r ds

confl cting with the EN

hav e to be withdrawn (dow) 20 4-01-01

national stand r ds

conflcting with the

amendment hav e to be

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4 In frared-emit in g diodes ( ex cluding dev ices for fibre

5 Photodiodes (excluding dev ices for fibre optic systems or subsystems) 4

6 Phototransistor ( excluding d ev ices for fibre optic sy stems or subsystems 5

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8.1 Ty pe 1

8.4 Rating s ( hav e to be mentioned in a special section in the

8.6 Electrical, env ironmental an d/or end urance test

Ta le 2 — Tests and test sequence for photocoupler prov id ing

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1) The IE ( Internat ional Electrotech ical Commis ion) is a worldwide or ganization for

stan ardizationcompr ising al national electrotechn ical commite s (E National Commit te s)

The o ject of the IE is to promote international co-o eration on al quest ions concerning

stan ardizationin the electrical an electronic fields.To this en an in ad ition to other activities,

the IE publshes Internat ional Stan ards Their pr ep ration is entr usted to tech ical commite s;

any IE National Committ ee int erest ed in the subject de lt with ma p rticip te in this pr ep r at or y

work International, g v rnmental an non-g v rnment al org nizat ions laising wit h the IE also

p r ticip te in this pre aration The IE cola or ates closely with the Internation al Org nization for

Stan ardization ( ISO) in acordance with con itions determined b ag re ment b twe n the two

org nizations

2) The formal decisions or agre ments of the IE on tech ical mat er e pres , as ne rly as p s ible,

an inter national consensus of o inion on the rele ant subjects since e ch t ech ical commite has

re resen tation fr om al interested National Commit te s

3) The documents pr od ced ha e the for m of recommen ations for international use an are

publshedin the form of st an ards,tech ical re orts or guides an t he are ac e ted b the National

Commite s in that sense

4) In or der to pr omote int ernational u ification, IE National Commite s u dertake to a ply IE

International Stan ards transp r ently to the ma imum e tent p s ible in their national an

re ionalstan ards.Any div erg nce b twe n the IE Stan ard an the corr esp n ing national or

re ionalstan ard shal b cle rly in icated in the lat er

5) The IE pro ides no mar king proced r e to in icat e its a pro al an can ot b r en er ed

resp nsiblefor any e uipment declared to b in confor mity with one of it s stan ards

6) Attention is dr awn to the p s ibi ty t hat some of the elements of t his International Stan ard ma

b the subject of p tent right s The IE shal not b h eld resp nsible for identifying any r al such

p tent rights

International Stand rd IEC6 7 7-5-2 has be n pr ep red b subcommit e 4 C:

Opto lectronic, d ispla and imag ing devices, of IEC tech ical commit e 4 :

Semiconductordevices

Th is fir t edition replaces p rtial y the second ed ition of IEC6 7 7-5 (19 2) and

constitutes a tech ical rev ision ( se alsoAnnex A: Cros references ind ex)

It should be rea jointly with IEC6 7 7-1, IEC620 7-1 and IEC620 7-2

Th e tex t of this stand r d is b sed p r tial y on IEC 6 7 7-5 ( 19 2) and p r tialy on

the fol owing documents:

Ful information on the v oting for the a prov al of this stand rd can be found in the

report on voting indicated in the a ov e ta le

An ex A is for information only

An ex B for ms an integ ral p rt of this stand r d

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?Introduction

Th is p rt of IEC 6 7 7 prov ides b sic information on semicond uctor :

— terminology;

— let er symbols;

— es ential rating s and characteristic ;

— measuring meth ods;

— ac eptance and rel a i ty.?

1 Scope

This p rt of IEC6 7 7 gives the es ential ratin gs and characteristic of the folowing categ ories or

subcategories of opto lectronic devices which are not intend ed to be used in the field of fibre optic sy stems

or subsystems:

— Semiconductor ph oto mit er , includ ing:

• l ght-emit ing diodes ( LEDs);

• inf ared-emit ing diodes ( IREDs);

• laser diodes

— Semiconductor ph oto lectric detector , including:

• photodiod es;

• phototransistor

— Semiconductor photosensitiv e dev ices

— Semiconductor dev ices uti zing the optical ra iation for internal operation, including:

• photocoupler , optocoupler

2 Norm ative r f r nces

The folowing normative documents contain prov isions wh ich, through reference in this text, constitute

prov isions of this p r t of IEC6 7 7 At the time of publ cation, the ed itions ind icated wer e v ld All

normativ e documents are subject to rev ision, and p rties to a re ments b sed on this p rt of IEC6 7 7

ar e encourag ed to investig te th e pos ibi ty of a ply ing the most recent editions of the n ormative

documents indicated below Member of IEC and ISO main tain r egister of cur rently v ald Internation al

Stand rds

IEC 6 0 5:19 5, Sa fety r equir ements f r ma ins oper a ted el ectr onic a nd r ela ted a ppa r a tus fr hous hold

a nd simil a r gener a l us

IEC 6 0 8-2-1:19 0, Envir onmenta l te tng — Pa r t 2: Te ts — Te ts A : Cold

IEC 6 0 8-2-2:19 4, Envir onmenta l te tng — Pa r t 2: Te ts — Te ts B : Dr y hea t

IEC 6 0 8-2-3:19 9, Envir onmental te tng — Pa r t 2: Te ts — Te t Ca : Da mp hea t, stea d y sta te

IEC 6 0 8-2-6:19 5, Envir onmenta l te tng — Pa r t 2: Te ts — Te t Fc: Vibr a tion (sin soid a l)

IEC 6 0 8-2-14:19 4, Envir onmenta l te tng — Par t 2: Te ts — Te t N: Cha nge o temper a tur e

IEC 6 0 8-2-17: 19 4, Envir onmenta l te tng — Pa r t 2: Te ts — Te t Q: Sea ling

IEC 6 0 8-2-27:19 7, Envir onmenta l te tng — Par t 2: Te ts — Te t Ea a nd guid a nc : Shock

IEC 6 0 8-2-3 :19 0, Envir onmenta l te tng — Pa r t 2: Te ts — Te t D b a nd guid a nc : Da mp hea t,

cyclic( 2 + 12-hour cycl e)

?IEC 6 1 2:19 9, Method fr d eter mining the compa r a tive a nd the pr oo tr a cking ind ic s o solid

insula ting ma ter ia ls un d er moist cond itons

IEC 6 2 6-1:19 0, G uid e f r the d eter mina tion o ther ma l end ur a nc pr oper tie o electr ica l insul a ting

ma ter ia l s — Pa r t 1: G ener a l guid eline fr a geing pr oc d ur es a nd eva l ua tion o te t r esults

IEC 6 2 6-2:19 0, G uid e f r the d eter mina tion o ther ma l end ur a nc pr oper tie o electr ica l insul a ting

ma ter ia l s — Pa r t 2: Choic o te t cr iter ia ?

IEC 6 3 6-1:19 9, Mea sur ement o photos nsi ive d evic s — Pa r t 1: B a sic r ecommend a tions

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IEC 6 6 4-1:19 2, Insula tion co r d ina tion fr equipmen t wihin low-v la ge systems — Pa r t 1: Pr incipl es,

r equir ements a nd te ts

?IEC 6 6 2-2:19 0, Spe ifica tion fr ce r a mic a nd gla ss insula ting ma ter ia ls — Pa r t 2: Method s o te t.?

IEC 6 6 5-2-2:19 1, Fir e ha za r d te tng — Pa r t 2: Te t methods — Se ton 2: Ne d le-fl ame te t

IEC 6 7 7-5-1:19 7, Dis r ete s micond ucto d evic s a nd integr a ted cir cuis — Pa r t 5-1: O ptoelectr on ic

d evic s— Gener a l

IEC 6 7 7-5-3:19 7, Dis r ete s micond ucto d evic s a nd integr a ted cir cuis — Pa r t 5-3: O ptoelectr on ic

d evic s— Mea sur ing method s

3 Lig ht-em it ing diodes

(exclud ing dev ice fo fibr e optic systems o subsy stems)

3.1 Ty e

Ambient-rated or case-rated lght-emit ing diod e

3.2 Sem ic nductor m aterial

Gal ium ar enid e-phosphid e, etc

3.3 Colour

3.4 Detai s of outl ne and enca sulation

3.4.1 IEC and/or national referen ce n mber of the outl ne drawing

3.4.2 Method of enca sulation: glas /metal/plastic/other

3.4.3 Terminal identification and indication of any conn ection betwe n a terminal an d the case

3.5 Lim iting v lues (a solute m aximum system) over the operating tem perature rang e, unles

otherwise stated

3.5.1 Minimum and ma imum storag e temperatures (T

stg)

3.5.2 Minimum and ma imum operating ambient or case t emperature ( T

amb

or T

case)

3.5.3 Max imum rev er e v oltag e ( V

R)

NOT Not a plca le to d aldiode dev ices con ected anode-to-cath ode an cathode-to-anode

3.5.4 Max imum contin ous forward cur ent (I

F) at an ambient or case temper ature of25°C and derating

curv e or deratin g factor

3.5.5 W here a propriate, ma imum peak forward cur ent (I

FM) at an ambient or case temperature

of25°C, u der specified pulse conditions

3.6 Ele trical characteristics

For multiple diodes, the ch aracteristic should be g iv en for each diode F or special a pl cations, a ditional

characteristic ma be required

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3.7 Supplem entary information

3.7.1 Radiat ion d iagram

A dia ram g ra hical y ex pres ing ty ical luminous intensity v er us v iewing an gle, and using either polar

or rectang ular co-ordinates

3.7.2 Spe t ral diagram (where appr priat e)

A dia ram g ra hicaly ex res ing ty ical luminous intensity v er us wa eleng th

3.7.3 Me hanical inf rmat ion

Mounting and soldering conditions, where a propriate

4 Inf ar d- em it ing diodes

( excluding dev ice fo fibr optic sy stems o subsy stems)

4.1 Ty e

Ambient-rated or case-rated inf ared-emit in g diode

Gal um ar en ide, etc

4.3 Deta ils of outl ne and enca sulation

4.3.1 IEC and/or nation al reference n mber of the outl ne drawing

4.3.2 Meth od of enca sulation: glas /metal/plastic/other

4.3.3 Terminal iden tification and indication of any con ection betwe n a terminal and the case

4.4 Lim iting v lues (a solute m axim um system) over the opera ting tem perature rang e, u les

otherwise stated

4.4.1 Minimum and ma imum storag e temperature (T

st g)

4.4.2 Minimum and ma imum operating ambient or case temperature (T

amb

or T

case)

4.4.3 Max imum rev er e v oltage ( V

R)

u les othe wise s ated

Notes S m bols Requir m ent

3.6.3 L umin ous intensity

along the defined

NOT 1 Not a plca le to d aldiode de ices conn ected anode-to-cathode an cathode-to-anode

NOT 2 Ifthe inclu ed sold angle o er which t he intensit y is me sured is not ne lg ible, it should b sp cified

NOT 3 For diodes inten ed for use in multidiode ar a s,ma imum luminous intensity i s also re uired

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4.4.4 Max imum continuous for ward cur ent (I

F) at an ambient or case temperature of 25 °C and derating

curv e or deratin g factor

4.4.5 W here a propriate, ma imum peak forward cur en t (I

PM) at an ambient or case temperature

of25°C, u der specified pulse conditions

For special a plcations, a ditional characteristic ma be r equired

4.6 Supplem entary inform a tion

4.6.1 Rad iat ion d iagram

A diagram g ra hical y ex res ing ty ical rad iant power output or rad iant intensity v er us ang le with

respect to the defined mechanical a is, an d using either polar or rectang ular co rdin ates

4.6.2 Spe t ral diagram (where appr priat e)

A diagram g ra hical y ex res ing ty ical rad iant power output or rad iant intensity v er us wav elength

4.6.3 Me hanical inf rmat ion

Mou ting and solder ing conditions, where a propriate

(exclud ing dev ice fo fibr e optic systems o subsy stems)

5.1 Ty e

Ambient-rated or case-rated photodiode intended for smal sig nal and switching a pl cations

Si con, etc

u les othe wise s a ted

Notes S m bols Requir m ent

Fspecified ( d.c or pulse) V

4.5.3 Ra iant power output or

r adiant intensity along the

d efined mechanical a is

I

Fspecified ( d.c or pulse) 1 ?

p

4.5.5 Spectral ra iation b ndwidth

(where a propriate)

Half-v lue of peak

emis ion, with I

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5.4.1 Minimum and ma imum storag e temperatures ( T

stg)

5.4.2 Minimum and ma imum operating ambient or case t emperature (T

amb

or T

case)

5.4.3 Max imum rev er e v oltage ( V

R)

5.6 Supplem entary information

5.6.1 D iagram o t ypical s nsit ivit y

5.6.2 Ty pical spe t ral d iagram

A dia ram g ra hicaly ex res ing relativ e spectral sensitiv ity ver us wa elength

6 Phototransistors

( excluding dev ice fo fibr optic sy stems o subsy stems)

6.1 Ty e

Ambient-rated or case-rated phototransisto intended for smal signal and switching a pl cations

u les othe wise s ated

5.5.1 Rev er e cur ent u der

E

v

or E

especified

Rspecified , E

especified, at a

short wav eleng th ?

1specified

and at a long er wav elength ?

Specified cir cuit

rise time and fal time, specified v alue of V

R,

E

v

or E

especified

t

Ma

turn-on time and

turn-of time

specified v alue of V

R,

E

v

or E

especified

NOT 1 Iluminat ion b stan ard i uminant A (acording to IE 6 3 6-1) emit ed fr om a fiament u gsten lamp with a colour

temp r at ure T = 28 5,6K or with radiation fr om a defined monochromatic sour ce

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6.5 Lim iting v lues (a solute m aximum system) over the operating tem perature rang e,

u les other wise stated

6.5.1 Minimum and ma imum stora e temperature (T

stg)

6.5.2 Minimum and ma imum operating ambient or case temperatures (T

amb

or T

case)

6.5.3 Max imum colector-emit er v oltag e with z ro b se cur ent (V

C O)

6.5.4 W here an ex ternal b se con nection is present:

6.5.4.1 Max imum colector-b se v oltag e with z ro emit er cur ent (V

C O)

6.5.4.2 Max imum emit er-b se v oltag e with z ro col ector cur ent (V

E O)

6.5.5 W here no external b se connection is present:

Ma imum emit er-col ector v oltag e (V

E O)

6.5.6 Max imum contin ous colector cur ent ( I

C)

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u les othe wises ated

Notes S m bols Requir ment

6.6.1 Col ector cur en t u der

ir a iation

V

Cspecified, I

6.6.2 Col ector-emit er d rk

cur ent

V

Cspecified, I

6.6.5 Emit er-b se breakdown

volta e or, wh ere no b se

con ection is present,

emit er-colector breakd own

voltag e

I

Especified, E

wa eleng th ?

1specified and

C, E

NOT 1 Iluminat ion b stan ard i uminant A (acording to IE 6 3 6-1) emit ed fr om a tu gsten fiament lamp with a colour

temp r at ure T = 2 8 5,6 K or with radiation fr om a defined monochromatic sour ce

a

W here a pro riate

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6.7 Supplem entary informa tion

6.7.1 D iagram o t y pical s nsit ivit y

6.7.2 Ty pical spe t ral diagr am

A diag ram gra hicaly ex res ing relativ e spectr al sensitivity v er sus wav elength

7 Photocouplers, optocouplers ( with output tra nsisto )

7.1 Ty e

Ambient-rated or case-rated photocoupler , optocoupler , with transistor output, for signal isolation

a plcations

Input d iod e: g l um ar enide, aluminium ar enide, etc

Output tr a nsistor : si icon, etc

7.3 Polarity of the output resistor

otherwise stated

Indicate any qualfications such as time, fequency , pulse duration, h umid ity, etc

7.5.1 Minimum and ma imum storag e temperatures (T

stg)

7.5.2 Minimum and ma imum ambient or reference-point operating temper atures (T

amb

or T

ref)

7.5.3 Max imum soldering temperature (T

sld)

Ma imum soldering time and minimum dist ance to case should be specified

7.5.4 Max imum contin ous ( d irect) rev er e i nput v oltage (V

R)

7.5.5 Max imum colector-emit er v oltag e, with th e b se open-cir uited (V

C O)

7.5.6 Max imum col ector-b se v olta e, where an external b se con ection is presen t, with the emit er

open-cir uited ( V

C O)

7.5.7 Max imum emit er-b se v oltag e, where an extern al b se con ection is present, with the colector

open-cir uited ( V

E O)

or:

7.5.8 Max imum emit ter-col ector v oltag e, where no external b se con ection is present (V

E O)

7.5.9 Max imum contin ous ( d irect) or repetitiv e peak isolation v oltag e (V

IO

or V

IORM)

Th e wa esha e and repetition rate should be specified

7.5.10 W here a propriate, ma imum surge isolation v oltage ( V

IOSM)

This should be specified for pulses of both polarities ha ing the wav esha e shown inFig ure 1

7.5.1 Ma imum contin ous colector cur ent ( I

C)

7.5.12 Ma imum contin ous forward input cur ent ( I

F) at an ambient or reference-point temperatur e

of25°C and der ating curv e or derating factor

7.5.13 Ma imum peak forward input cur ent ( I

F M) at an ambient or reference-point temperature of25°C

and u de specified pulse conditions

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7.5.14 Max imum power dis ip tion ( P

tr n) ofthe output transistor at an ambient or referen ce-point

temperature of25°C and a d erating curv e or derating factor

7.5.15 Max imum total powe dis ip tion of the p ckag e ( P

tot

at an ambient o reference-point temperature

of25°C and derating curve or d erating factor

Fig ure 1 — Test voltag e

Tiêu đề	Discrete Semiconductor Devices And Integrated Circuits — Part 5-2: Optoelectronic Devices — Essential Ratings And Characteristics
Trường học	British Standards Institution
Chuyên ngành	Standards
Thể loại	British standard
Năm xuất bản	2001
Thành phố	London

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