Iec 61189 5 503 2017

8 5.1.1 Evaluation desig f or the glas cloth direction.. 14 7.1 Man al in ulation resistan e me s rement method.. 14 7.2 Automatic in ulation resistan e me s rement method.. 17 8.4 Temp

IEC 61 1 89- 5- 503

Editio 1.0 2 17-0

Test met hods for elect rical mat erials, print ed board and ot her int erconnect ion

st ruct ures and assembl es –

Part 5- 503: General t est met hod for mat erials and assembl es – Conduct ive

anodic fi ament s (CAF) t est ing of circuit boards

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IEC 61 1 89- 5- 503

Edit io 1.0 2 17-0

Test met hods for elect rical mat erials, print ed board and ot her int erconnect ion

st ruct ures and assembl es –

Part 5- 503: General t est met hod for mat erials and assembl es – Conduct ive

anodic fi ament s (CAF) t est ing of circuit boards

FOREWORD 4

1 Sco e 6

2 Normative ref eren es 6

3 Terms an def i ition 6

4 Testin con ition 7

4.1 Stan ard con ition 7

4.2 Ju gment state 8

5 Sp cimen 8

5.1 Outl ne of CAF test vehicle desig 8

5.1.1 Evaluation desig f or the glas cloth direction 8

5.1.2 Desig b twe n plated throu h hole (PTH) 9

5.2 CAF test bo rd 10 5.2.1 Example A 10 5.2.2 Example B 1

5 3 Numb r of sp cimen 1

3 6 Eq ipment Ap aratu or material 13 6.1 En ironmental test c amb r 13 6.2 Me s rin eq ipment 13 6 3 Power s p ly 1

3 6.4 Cur ent lmitin resistors 14 6.5 Con ectin wire 14 6.6 Other dedicated f i tures 14 7 Resistan e me s rement method 14 7.1 Man al in ulation resistan e me s rement method 14 7.2 Automatic in ulation resistan e me s rement method 15 8 Test method 16 8.1 Test method selection 1

6

8.2 Ste d -state temp rature an h midity test 16

8.2.1 Object 16

8.2.2 Test con ition 16

8.3 Temp rature an h midity (12 h + 12 h) c cle test 16

8.3.1 Object 16

8.3.2 Test con ition 17

8.3.3 Numb r of c cles of the test 17

8.4 Temp rature an h midity c cl c test with an without low temp rature

exp s re 17

8.4.1 Object 17

8.4.2 Test con ition 17

8.5 Ste d -state hig temp rature an hig h midity (u saturated pres urized

va our) test 17

8.5.1 Object 17

8.5.2 Test con ition 18

9 Proced re 18

9.1 Test sp cimen pre aration 18

9.1.1 General 18

9.1.3 Pres re n f or o en an s orts 18

9.1.4 Cle nin 19

9.1.5 Con ectin wire 19

9.1.6 Cle nin af ter at ac ment 19

9.1.7 Dry 19

9.2 Precon ition 19

9.3 Test proced re 19

9.3.1 Set in of the sp cimen 19

9.3.2 Test voltage an me s rin voltage 19

9.3.3 Temp rature an h midity con ition at the start time of the test 2

9.3.4 Me s rement 2

9.3.5 Proced re in test inter uption 21

9.3.6 En of test 21

9.4 Vis al in p ction 21

9.4.1 General 21

9.4.2 Sha e of electroc emical migration 21

An ex A (informative) Forms of electroc emical migration 2

A.1 Example of den rite-s a ed migration 2

A.2 CAF (Example of migration alon the glas f ibre) 2

Biblogra h 2

Fig re 1 – Sc ematic of in-lne test comb, with p s ible f ai ure site 8

Fig re 2 – Sc ematic of stag ered test comb, with p s ible fai ure site 9

Fig re 3 – Man at an distan e 9

Fig re 4 – Sc ematic section of via p ir with bias 10 Fig re 5 – Example of in er layer via p d an layer p t ern 10 Fig re 6 – Example of no in er layer via p d an layer p t ern 10 Fig re 7 – In ulation evaluation p t ern f or throu h-holes an via holes 1

Fig re 8 – L youts of the two version of the CAF test b ard 12 Fig re 9 – Me s rement with in ulation resistan e meter 15 Fig re 10 – Temp rature an h midity in a test 2

Fig re A.1 – Example whic is generated on the b ard s race 2

Fig re A.2 – Example of CAF 2

Ta le 1 – Dimen ion of in ulation evaluation p t ern for throu h-holes 1

Ta le 2 – Test stru tures A1 throu h A4 desig rules 12

Ta le 3 – Test stru tures B1 throu h B4 desig rules 13

Ta le 4 – Test con ition 16

Ta le 5 – Numb r of c cles of the test 17

Ta le 6 – Test con ition 17

Ta le 7 – Test con ition (IEC 6 0 8-2-6 ) 18

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This doc ment has b en draf ted in ac ordan e with the ISO/IEC Directives, Part 2

A lst of al p rts in the IEC 61 8 series, publ s ed u der the general title Test met hods for

ele tric l mat erials, print ed b ards a d oth r interc n e t ion stru tures a d as embl ies, can

b fou d on the IEC we site

The commite has decided that the contents of this doc ment wi remain u c an ed u ti the

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the sp cific doc ment At this date, the doc ment wi b

• with rawn,

• re laced by a revised edition, or

A bi n ual version of this publcation may b is ued at a later date

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TEST METHODS FOR ELECTRICA L MATERIA LS, PRINTED BOA RD

Part 5-503: General test method f or materials and assembl es –

Conductive anodic f ilaments (CA F) testing of circuit boards

This p rt of IEC 61 8 sp cifies the con u tive anodic f ilament (here fter refer ed to as CAF)

an sp cifies not only the ste dy-state temp rature an h midity test, but also a temp ratu

re-h midity c clc test an an u saturated pres urized va our test (HAST)

The fol owin doc ments are refer ed to in the text in s c a way that some or al of their

content con titutes req irements of this doc ment For dated referen es, only the edition

cited a ples For u dated ref eren es, the latest edition of the ref eren ed doc ment (in lu ing

an amen ments) a pl es

IEC 6 0 8-1:2 13, Enviro me t al t esting – Part 1: Ge eral a d g ida c

IEC 6 0 8-2-3 , Enviro me tal test ing – P art 2-3 : Tests – Test Db: Damp h at, c c c

(12 h + 12 h c cl e)

IEC 6 0 8-2-3 , Enviro me tal test ing – Part 2-3 : Tests – Test Z/AD: Comp sit e

temp rature/h mid ity c c c test

IEC 6 0 8-2-6 , Enviro me tal testing – Part 2: Test methods – Test Cx: Damp h at, steady

state (u sat urated pres urized vap ur)

IEC 6 0 8-2-6 , Enviro me tal testing – Part 2: Tests – Test Cy: Damp h at, st eady st ate,

a c l erated test primaril intended for c mp n nts

IEC 6 0 8-2-7 , Enviro me tal testing – Part 2-78: Tests – Test Ca : Damp h at, ste dy

state

IEC 6 19 , Printed b ard d esig , ma ufa ture a d as embly – Terms a d d efinitions

IPC-TM-6 0 No.2.6.14.1, El ectro h mic l Migrat ion Resista c Test [viewed 2 17-01-31]

Av il able at: htt ps:/www.ipc.org/TM/2-6 2-6-14-1.pd f

IPC-TM-6 0 No.2.6.2 , Co du tiv An d ic F il ame t (CAF) Resista c Test: X-Y Axis [viewed

2 17-01-31] Avail able at : https:/www.ip org/4.0 Kn wled ge/4.1_Sta d ard s/test/2-6-25.pd f

3 Terms and def initions

For the purp ses of this doc ment, the terms an definition given in IEC 6 19 an

IEC 6 0 8-1 as wel as the fol owin a ply

ISO an IEC maintain terminological data ases for u e in stan ardization at the fol owin

• IEC Electro edia: avai a le at htp:/ www.electro edia.org/

• ISO Onl ne browsin platf orm: avai a le at htp:/www.iso.org/o p

3.1

ele troc emic l migration

degradation of in ulation c aracteristic b twe n con u tors d e to eletroc emical elution of

ion in a h mid en ironment when voltage is a pl ed to con u tors of a printed wirin b ard

Note 1 to e try: In a ditio , io ic imp ritie pre e t in th in ulatio s c ntrib te to th ir d gra atio

Note 2 to e try: Ele tro h mic l migratio ma ta e th f orms of d n rite (3.2) a d C F(3.3)

3.2

de drite

metal migration

Note 1 to e try: De drite is visible in th t it cre te a bra c in a d tre lk stru ture o th s ra e, o th

intera e b twe n la ers, etc of a printe wirin b ard

3.3

CAF

con uctiv a odic f ilame t

migration whic oc urs alon the monofi ament of reinforcin material s c as glas cloth in

an in er layer p rt of a printed wirin b ard

3.4

HAST

hig ly a c lerate temperature a d humidity stre s te t

stres test u der u saturated pres urized va our test

Note 1 to e try: Se IEC 6 0 8-2-6

3.5

a tomatic ins lation re ista c me s reme t

me s rement to take contin ou or predetermined p riodic test data u in an automatic

me s rement s stem without an o erator

3.6

ma u l ins lation re ista c me s reme t

me s rement to take predetermined p riodic test data u in me s rement eq ipment by an

4.1 Sta dard condition

Me s rement is p rormed u der the stan ard atmospheric con ition whic is sp cified in

Clau e 4 of IEC 6 0 8-1:2 13

It de en s on a referen e con ition stated in 4.2 when an ambig ity is fou d f or the ju gment

in the stan ard atmospheric con ition or when it is req ired in p rtic lar

It may b p r ormed u der other con ition than the stan ard atmospheric con ition, when no

doubt a out the ju gment s bsits an when me s rin in stan ard con ition proves diff i ult,

or when sp cified in p rtic lar sp cification

5.1.1 Evaluation de ign for th glas cloth dire tion

The in-l ne test combs are comprised of a series of alternate rows of via holes with a voltage

a pl ed acros the comb They re resent the most common f ai ure sites where CAF can oc ur:

b twe n via hole wal s The via holes are in l ne with one another an in al g ment with the

woven glas f ibre reinforcement The closest p int b twe n e c via p ir is the most lkely

p int for CAF growth (example hig lg ted in Fig re 1) The blac sp ts re resent the dri ed

hole, an the co p r p d as ociated with the via holes are in oran e

The con tru tion of stag ered combs is simiar to that of the in-l ne combs, however, the via

p irs are ar an ed at 4 ° This me n that the most l kely route for p tential CAF growth is

lon er sin e the orientation of the glas f ibres may only p rmit growth in the horizontal an

vertical direction (as re resented by the white el pses in Fig re 2)

Figure 1 – Sc ematic of in-l ne te t comb, with pos ible fai ure site

IEC Fibre we v

Figure 2 – Sc ematic of sta gere te t comb, with p s ible f ai ure site

"Man atan distan e" is the s ortest orthogonal distan e alon the X- an /or Y- axes l nes

b twe n adjacent dri ed hole f eatures (cor esp n s to the orthogonal nature of the laminate

material s woven glas fibre reinf orcement (Fig re 3)

Figure 3 – Ma hat a dista c

5.1.2 De ign betwe n plate through hole (PTH)

a) Without in er layer p tern

Example desig b twe n PTH without in er layer p t ern is s own in Fig re 4, whic is a

s hematic cros -section of a via p ir

NOT Th g p is ta e f rom th e g of th c p er Co p r thic n s o th h le wal is a pro imately

5 μm p r sid

IEC Fibre we v

via diameter

Fig re 4 – Sc ematic s ction of via pair with bia

b) With in er layer p t ern

There are two desig s One is the desig of in er layer via p d an layers as s own in

Fig re 5 The other is the desig of no in er layer via p d an layer p t ern as s own in

con tant Dimen ion of the holes are sp cif ied in Ta le 1 There s ould b more than five

holes on a l ne in the p t ern The n mb r de en s on an agre ment b twe n the u er an

Figure 7 – Ins lation e aluation pat ern f or through-hole a d via hole

Table 1 – Dime sion of ins lation e aluation pat ern f or throu h-hole

Via diameter (

12 mm × 17 mm Test b ard desig s for evaluatin CAF resistan e s al have varyin

dri ed hole wal to dri ed hole wal distan es f or plated holes These distan es can ran e

f rom as low as 0,15 mm se aration f or alternate laminate materials exp cted to have very

hig CAF resistan e an minimal co p r wic in out fom the plated-throu h hole (PTH), to

as hig as 0,8 mm se aration for evaluatin pres -f it con ector a pl cation The dri ed hole

size, rather than the f i is ed hole size, is sp cified in the c art on the b re b ard f abrication

drawin to en ure con istent sp cin

Internal layer thievin may b ad ed to plane layers arou d the p rimeter Test b ard s ould

p rp n ic lar to the rows of same-net dais c ain vias f or A1 to A4 (mac ine/grain direction

ten s to fai f irst

Test b ard desig s s al have s ff i ient minimum sp cin s on outer layers to en ure that

s rf ace in ulation resistan e f ai ures do not oc ur L youts of the IPC-9 5 an IPC-9 5 test

b ard stru tures (CAF test b ard ) are s own in Fig re 8 The test b ard desig rules are

l sted in Ta le 2 an Ta le 3

Figure 8 – La outs of the two v rsions of the CAF te t boards

Table 2 – Te t structure A1 through A4 d sign rule