MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 5 ppsx
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 5 ppsx
... Eq. (5. 14) Substrate Vfb df Qh Y <h VTO nMOST p-type - +- +++ pMOST n-type - -+ - (for metals and n+ polysilicon gate) - - (for metals and n+ polysilicon gate) + (for ... frequency MOS capacitance’, Solid-state Electron., 17, pp. 73 5- 7 42 (1974). ED-32, pp. 61 7-6 21 (I 9 85) . 5. 1 MOSFET with Uniformly Doped Subst...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 13 ppsx
... (flat portion between - 0.6 V to - 1.1 V for n-channel device with W/L = 51 0. 25 pm) in C-V data for short-channel devices [90]. Therefore, one can use Eq. (9. 75) to determine AL ... Jakubowski and K. Iniewski, ‘Simple formula for analysis of C-V characteristics of MIS capacitor’, Solid-state Electron., 26, pp. 75 5- 7 56 (1983). [30] D. M. Brown,...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 3 docx
... + + pMOST - - - + terminal voltages as drain-source voltage Vds( = V, - VJ, gate-source voltage V,,( = V, - V,), and bulk-source voltage vb,( = vb - Vs). For normal DC ... 2 Basic Semiconductor and pn Junction Theory The variables F,,F, and F3 are F, =- *bi [l -( 1 - F,)&apos ;-& quot;] (1 -4 F2 = (1 - F,...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 4 doc
... 18 78 R R," 17 52 R 0. 35 y 0. 25 50 50 110 3 MOS Transistor Structure and Operation ~i 1; L 6i! - - - - - - - - - Fig. 3.3 1 Cross-section showing overlap capacitances ... negative number. Similarly for an Al-Si0,-Si(n-type) system, I mrnS = - 0 .51 + 4, (V) n-type Si I which is again a negative number. Th...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 6 pptx
... leads to (5. 39) where g5s is given by Eq. (5. 37). Solving Eqs. (5. 38) and (5. 39) for N,, and using Eq. (5. 36) for X,, yields (5. 40) where q5i is given by Eq. (5. 35) . This value ... 0 .5 0 >" ;- I 5 0.4 lY I bO.3 1 95 1'1'1'1'1~1'1'1~ I - Nb = 2 X 10'"cm-3 - - - - -...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 7 doc
... (5. 107) which was fitted to the data for the following range of parameters: N,= lo1&apos ;- 10'6cm-3, Xj=0.1 5- 0 .41pm to, = 50 0 A 5 = 4.1. - 8.8. lo-: (5. 108) m = 2.6 - ... field in a short-channel MOSFET , Solid-State pp. 11 8-1 27 (1989). Electron., 30, pp. 50 3-3 11 (1987). [78] Y. Omura and K. Ohwada, ‘Threshold voltage theory...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 8 potx
... form that at first glance appears different. 6.7 Short-Geometry Models 3 - 2- - a 9- W- (7 5 9 1. 75 Q t- 6 !I 3 t- 6 fJY 0 .5 293 I = 1.31 x 104V/cm a= 1.13 0 - ... Piece-Wise Drain Current Model for Enhancement Devices 269 n MOST V* =QV 1 5 10 .5 v) n - 5 1 0-6 3 0 1 0-7 z a 1 0-8 n > [r 1 0-9...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 9 potx
... 6 MOSFET DC Model I I 1 I I I pMOST toX = 1 05 A W,/L, = 10l0 .5 v,, = -4 v h c E 4 v U I 1 .o I - -2 v 0.01 -1 - - 7- -1 - - i - I * " 0.0 0 .5 1.0 ... 0.0 0 .5 1.0 1 .5 2.0 2 .5 3.0 3 .5 -Vh (VOLTS) (a) 1, = 1 05 A w,,,/L, = 10D. 25 1.0 - 0.0 0 .5 1.0 1 .5 2.0 2 .5 3.0 3 ....
Ngày tải lên: 13/08/2014, 05:22