1 1 lineshapes in solid state spectroscopy

... )2 (11) 36 Advances in Solid State Circuits Technologies I out = I out − I out = β 1VDS (Vin − Vin ) (32) , where β1 = β2, VT1 =VT2, and VDS1 = VDS2 Assuming that current I9 flows from M11 through ... large tuning range 38 Advances in Solid State Circuits Technologies Fig 11 The drain-source voltage of input transistor M1 and M2 VC (V) 0.690 0.695 0.700 0.705 0.710 0.715 0.720 Linear input range ... 0.8μm 0.18μm 0.18μm 0.18μm Power supply 2V 1.8V 1.5V 1.8V 1.8V±10% 1.8V THD -40dB @10MHz -80dB, 0.8Vpp, @2.5MHz -33dB, 0.2Vpp, @5MHz -65dB, 1Vpp, @1MHz -50dB, 0.9Vpp, @50KHz -60dB, 0.7Vpp, @100KHz

Ngày tải lên: 21/06/2014, 06:20

... at λ0=1500nm, 1550nm and three given Gaussian parameters 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13 Fig 4 Dispersion slope Vs Wavelength at λ0=1500nm, 1550nm ... dispersion length increases by raising the Gaussian parameter 5 6 7 8 9 10 Trang 91.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 22.5 3 3.5 4 4.5 5 5.5 0 0 σ = 2.7869e-8 σ = 3.6935e-8 1 2 Fig 10 Quality Factor ... λ0=1500nm, 1550nm with σ as parameter 0 100 Fig 11 Dispersion Length vs Wavelength at λ0=1.5, 1.55μm In the following, the nonlinear effect length for 1 mW input power is illustrated in Fig 13

Ngày tải lên: 21/06/2014, 06:20

... GaAs 60 nm Drain Source n-InGaP Gate 70 nm n + GaAs 60 nm Drain Source n-InGaP Gate 70 nm 3 18 10 2 1 18 × − n nm InGaP GaAs 60 nm 5 x 10 18 cm -3 3 17 0.51 0.49 Ga P 70 nm 1 10 cm In Fig 4 The ... oxidized InGaP gate,” in Proceedings of the 7th IEEE International Conference on Solid-State and Integrated Circuits Technology (ICSICT), Beijing, China, Oct 18-21, 2004, pp 2301-2304 [13] K W ... Trang 145 fold in the current gain from collector current of 8.1×10-10 A to 1.6×10-10 A can be achieved This is attributed to the surface state density are suppressed, i.e., the surface recombination

Ngày tải lên: 21/06/2014, 06:20

... prior to the grating) is defined in the slowly varying envelope approximation as () ()() () 0 1 , itit in Ext E xAte ωϕ −+ = . (22) Following the results of Martinez [Martinez (1986)], the electric ... ()() () () 22 2 2 22 2 2 22 ,. in in x ii x in in Ex ExA e e e e φφ ΔΩ Ω − Ω−Ω − Δ Ω= Ω = (33) () () () () () ( ) ( ) 2 2 2 2 (2) (2) 222 ,exp1 241 2. x x in in in Ext e i t φφ − Δ ⎛⎞ ∝−ΔΩ− ... 110 and V001 are the phase velocities of the acoustic shear waves along the [ 110] axis and along the [001] axis respectively no and ne are the ordinary and extraordinary indices

Ngày tải lên: 21/06/2014, 10:20

... obtained... yttrium aluminium garnet fine powders for transparent YAG ceramic Japan Patent 10-101411 Yang, P., Deng, P & Yin, Z (2002) Concentration quenching in Yb:YAG J Lumin Vol 97, No 1, ... cooling system is eliminated in compact and easily maintainable laser system Therefore,... linearly polarized laser operation due to the combination of linearly 16 Advances in Solid-State ... (51 - 54) Yankov, P (1994) Cr4+:YAG Q-switching of Nd:host laser oscillators J Phys D Vol 27, No 6, (1118 - 1120) 24 Advances in Solid-State Lasers: Development and Applications Yin,

Ngày tải lên: 27/06/2014, 01:21

... Zirconia in Solid-State Sintering 1.3.1 Understanding in Solid-State Sintering 1.3.2 Grain Growth via Curvature Migration 10 1.4 Grain Coalescence 11 1.4.1 Grain Coalescence in ... (unit=170, file='coal output.txt') ipoin=1,npoin read (170, 2101) i, phi(i) end * ipoin=1,npoin if ipoin=i theta(ipoin)=theta(i) write(151,1001) ipoin, x(ipoin),y(ipoin),z(ipoin),theta(ipoin), ... 3001 7011 3011 2011 9001 1850 C format(12(I3,1x)) format (I5) format (12(g10.5, 1x)) format(I5) format(24(g10.5, 1x)) format(24(I5,1x)) format(38(I3,1x)/) format(200(I3,1x)) To reduce grain quantity

Ngày tải lên: 14/09/2015, 08:24

... hexadecenoic; C16:1(n − 7) palmitoleic; C17:0 margaric; C17:1(n − 9) heptadecenoic; C18:0, stearic; C18:1(n − 9), oleic; C18:1(n − 7), vaccenic; C18:2(n − 6), linoleic; C18:3(n − 3), α-linolenic; ... fragments Cinnamic acids Flavonols 3‑CQA (355, 181) 5‑CQA (355, 181) Q‑3‑rut (611, 303) Q‑3‑ac‑gluc* (517,303) Aspergillus niger FD Rhizopus oligosporus 0 10 20 30 40 50 60 Retention time (min) 1 3 ... (mg/100g FW) Aspergillus niger 0 20 40 60 80 100 y = -2.212x + 104.5 R 2 = 0.517 Pearson r = -0.719 P = 0.170 Chlorogenic acid (mg/100g FW) Aspergillus niger 0 20 40 60 80 100 y = -1.684x + 102.3

Ngày tải lên: 29/05/2020, 12:32

... one every 15 seconds Trang 35Linear friction welding A recent development in friction welding involves subjecting the interface of the two parts to be joined to a linear reciprocating motion, ... of welding, welding design, weld quality, and welding process selection are described next week  Other joining processes such as brazing, soldering, adhesive bonding and mechanical fastening methods ... Welding (USW) The shearing stresses cause plastic deformation at the workpiece interfaces, breaking up oxide films and contaminants and thus allowing good contact and producing a strong solid-state

Ngày tải lên: 12/03/2014, 17:47

... assessment in that setting.13This guideline is not in-tended for use for studies of malignant lymphoma since international guidelines for response assessment in lym-phoma are published separately.14 Finally, ... confusion in the original RECIST guideline Finally, a section on detection of new lesions, including the interpretation of FDG-PET scan assessment is included Imaging guidance: the revised RECIST includes ... in Solid Tumours), were pub-lished in 2000.8Key features of the original RECIST include definitions of minimum size of measurable lesions, instruc-tions on how many lesions to follow (up to 10;

Ngày tải lên: 15/03/2014, 01:20

... Circuits consisting of Subthreshold MOSFETs M5 M8 M13 M14 M1 I2 M6 M18 M3 M2 I1 M4 M9 M11 M10 M7 R M16 M12 M15 M17 M19 IREF Fig 12 Current reference circuit based on square root circuit [15] Transistors ... 10 Solid State Circuits Technologies M10 M1 M5 M6 M7 M11 M2 I1 M4 M3 I2 K5 I K6 I1 M8 K10 I K7 M9 R1 R2 K11 I K2 VREF R3 Fig Voltage reference circuit operated in the subthreshold region [11] ... IREF(=I1+I2) is given by I REF = I + I = ΔVBE VBE1 BT V (1 − AT ) + = + BE R1 R2 R01 (1 + α T ) R02 (1 + α T ) = V ( BT )(1 − α T ) + BE 01 (1 − AT )(1 − α T ) R01 R02 ≈ V ( BT ) + BE 01 (1 − (

Ngày tải lên: 21/06/2014, 14:20

... 159 10 Interdiffusion and Kirkendall Effect 161 10.1 Interdiffusion 161 10.1.1 Boltzmann Transformation 162 10.1.2 Boltzmann-Matano Method 163 10.1.3 Sauer-Freise Method 166 10.2 ... References 176 11 Diffusion and External Driving Forces 179 11.1 Overview 179 11.2 Fick’s Equations with Drift 181 11.3 Nernst-Einstein Relation 182 11.4 Nernst-Einstein Relation for ... Trang 2Springer Series inTrang 3Springer Series insolid-state sciences Series Editors: M Cardona P Fulde K von Klitzing R Merlin H.-J Queisser H St¨ormer The Springer Series in Solid-State Sciences

Ngày tải lên: 06/08/2014, 15:21

... 358–371 (1828); Edin J Sci 1, 314 (1829) 13 A Einstein, Annalen der Physik 17, 549 (1905) 14 A Einstein, Annalen der Physik 19, 371 (1906) 15 A Einstein, Z f¨ur Elektrochemie 13, 98 (1907) 16 A Einstein, ... math.-nat A, 418 (1913) 20 M van Smoluchowski, Annalen der Physik 48, 1103 (1915) 21 A Einstein, Naturwissenschaften 50, 107 (1917) 22 J Perrin, C.R Acad Sci Paris 147, 475 (1908) 23 J Perrin, C.R ... Trans AIME 133, 186 (1939) 28 E.O Kirkendall, Trans AIME 147, 104 (1942) 29 A.D Smigelskas, E.O Kirkendall, Trans AIME 171, 130 (1947) 30 A.M Sagrubskij, Phys Z Sowjetunion 12, 118 (1937) 31 H.A.C

Ngày tải lên: 06/08/2014, 15:21

... 5gm 200 4gm 18 0 3gm 16 0 2gm 1gm 14 0 ωt (MHz) ωt (MHz) 12 0 13 0 90 50 10 0 80 60 40 20 10 45 65 85 10 5 Ibias (μA) (a) 12 5 14 5 16 5 18 5 20 30 40 50 60 70 80 90 10 0 11 0 Ibias (μA) (b) Fig 17 Experimental ... realized in 90 nm technology 18 6 Advances in Solid State Circuits Technologies RESET current (μ A) 400 200 17 0 80 18 0 60 80 15 0 400 14 0 200 13 0 00 10 00 12 80 11 0 60 400 10 0 90 10 00 12 0 00 60 ... and beyond, Solid- State Electronics 52(9): 14 67 – 14 72 19 2 Advances in Solid State Circuits Technologies Thomas, C B., Rogers, B D & Lettington, A H (19 76) Monostable switching in amorphous...

Ngày tải lên: 21/06/2014, 06:20

... N/PMOS devices." Solid State Electronics 49 (12 ) :19 25 -19 32.[doi :10 .10 16/j.sse.2005.08. 016 ] [19 ] Jiang, L.,Yang, X., Wang, J.J., 20 01 Simulation models of ESD event in ICs Solid- State and Integrated-Circuit ... - Value for electron 9.85 10 5 9.85 10 5 9 10 16 Value for hole 1. 629 10 6 1. 354 10 6 1. 5 10 17 Mentioned in Eq Eq. (13 ) Eq. (13 ) Eq.(5) Eq.(4) Table Parameter set in the simulation Actually, traditional ... 202 Advances in Solid State Circuits Technologies Fig Doping profile of LSCR Total Concentration PSUB 1 10 15 NWELL 3.7 10 17 PWELL 2.6 10 17 N+ 5 .1 10 20 P+ 2.4 10 20 Table Total concentration...

Ngày tải lên: 21/06/2014, 06:20

... μ R 11 R12 ) + ⋅ S ( μ R9 R10 ) S ( μ R 11 R12 ) + S ( μ R9 R10 ) (20) ( 21) (22) where the membership of output fuzzy sets for control rules R1R4, R2R3, R5R7, R6R8, R9R10, and R11R12 are obtained ... 45 45 Phase Margin (deg) 83.7 10 9 57.5 77 .1 Unity-Gain Frequency (UGF) (kHz) 27 .1 33.8 24.5 28 .1 Gain Margin (dB) 35.7 31 18.2 21. 9 Gain Margin Frequency (kHz) 623.6 918 .3 94.6 18 4.6 Source Follower ... , p hvp 01 = , z hvn 01 = m , hvn 01 , R 1C Cgs , hvp 01 ro,Ibias Cgs , hvn 01 1+g m,hvn01R' R' = , pf = , (Cgs , hvn 01 + C L )R' C 1R 1R (4) where gm,hvp 01, gm,hvn 01, Cgs,hvp 01, Cgs,hvn 01 are the...

Ngày tải lên: 21/06/2014, 06:20

... Chip micrograph Received binary data 11 0 011 011 1 010 010 0 010 110 011 011 1 010 010 0 010 110 011 011 1 Negative 10 0mV 1ns output 62GHz 5Gbps input pulse 200ps -10 500mV |S 11| [dB] S11dd -20 -30 50 60 65 Eye ... Micrograph of the pulse receiver Binary data 2Gbps 011 010 1 0 010 110 10 10 010 11 010 1 0 010 110 10 10 01 60GHz input pulse (VIN) Negative output of the receiver (VM) Fig 35 Receiver input and output waveforms ... Radio 1Gbps 313 mV 313 mV 2Gbps 0.5ns 1ns Fig 36 Eye diagram with 2 31- 1 random bits of data at and 2Gbps data rates Bit Error Rate （BER) 10 0 2Gbps 1Gbps 10 -2 10 -4 10 -6 10 -8 10 -10 10 -12 -30 -15 -25...

Ngày tải lên: 21/06/2014, 06:20

... doses of 1, 5, 7, and 10 x1 011 cm-2 generate accepter concentrations of 1. 5, 1. 9, 2 .1, and 2.5x1 015 cm-3 at 3-μm deep portion between two adjacent trenches It is noted that even small increase in the ... (20 01) A 1. 5W Class-F RF Power Amplifier in 0.2µm CMOS Technology, in The 20 01 IEEE International Solid- State Circuits Conference (ISSCC) Digest of Technical Papers, pp 15 4 -15 5, February 20 01, ... cell innodations are divided into three phases Phase I (1K→1M): Shrinkage of planar area of memory cell together with the decrease in capacitor insulator thickness Thinning of the insulator finally...

Ngày tải lên: 21/06/2014, 06:20

... performance of transistor in LSI, continual scaling has been achieved since early 19 70’s Sizes of transistors in products measured 12 μm in 19 70 and around 45 nm in 2009 The scaling of device size has ... and ACTUATORS A: PHYSICAL, A 111 , pp 310 - 316 Sunami, H (2008-a) The Role of the Trench Capacitor in DRAM Innovation, IEEE Solid- State Circuits Society News, Vol 13 , No .1, pp 42-44 Sunami, H (2008-b) ... General Research Funds (GRF) No CityU 11 2608 References [1] Moore, G.E (19 75) Progress in digital integrated electronics in Electron Devices Meeting, 19 75 International [2] Chau, R.; Datta, S.;...

Ngày tải lên: 21/06/2014, 06:20

... COP number(/wafer) 400 300 200 10 0 (a) 300 200 10 0 0 0 .11 ~0 .12 0 .12 ~0 .13 0 .13 ~0 .18 0 .18 ~0.25 Size(um) (b) GCZ 0 .11 ~0 .12 0 .12 ~0 .13 0 .13 ~0 .18 0 .18 ~0.25 Size(um) Fig 18 Density and size profiles of ... Advances in Solid State Circuits Technologies Three p-type GCZ silicon crystal ingots with different germanium concentrations ([Ge]s) (10 15cm-3, 10 16cm-3 and 10 17cm-3 in the head portions while/and 10 16cm-3, ... of light germanium doping on thermal donors in Czochralski silicon wafers Materials Science in Semiconductor Processing, 9, 1- 3, 11 0 -11 3, 13 69-80 01 Fukuda, T., & Ohsawa, A (19 92) Mechanical strength...

Ngày tải lên: 21/06/2014, 06:20

... 14 13 67-72 10 2.25 1- 6 19 13 4.5±0.5 11 405 4.8 13 18 - 21 5.3±0.5 7.4 5; 12 -15 1. 4-4.2 16 2.5 17 1. 6 18 19 1; 2.3 19 1 19 0. 51 20 2.3 19 82 21 20 0.6 21 20 1; 2.3 19 21 20 0.74 1 49 8.7 21 0.68 ... 18 2; 19 MOC04 21 1; 2; 19 MOC10 28 2; 19 ; 26 FR–5 21 1; dV V dГ κ α0 ξ αT |Q| dn/dT P 10 -7/K 10 -7/К 10 -6/К 10 -6/К 10 -3 /K W/K/m 10 -3 /cm 15 16 3.5 94 15 17 13 *) 20 15 17 13 *) 2.2 4.4±0 .1 14 ... see Fig  51 Faraday Isolators for High Average Power Lasers m 1 0.56 0.48 ∞ 1/ 2 0 .13 7 0 .11 1 0.087 1/ 12 0.042 0.0265 0. 014 5 1/ 80 0.268 0 .15 8 0.092 1/ 12 0. 017 7 0.00 21 10−5 0. 012 0.0 017 10 −5 du 0.046...

Ngày tải lên: 21/06/2014, 10:20