4N25.PDF

95 10531 95 10532 Applications Circuits for safe protective separation against electrical shock according to safety class II reinforced isolation: D For application class I – IV at mains

Optocoupler with Phototransistor Output

Order Nos and Classification table is on sheet 2.

Description

The 4N25V(G)/ 4N35V(G) series consists of a

photo-transistor optically coupled to a gallium arsenide

infrared-emitting diode in a 6-lead plastic dual inline

package

The elements are mounted on one leadframe using a

coplanar technique, providing a fixed distance between

input and output for highest safety requirements

95 10531

95 10532

Applications

Circuits for safe protective separation against electrical

shock according to safety class II (reinforced isolation):

D For application class I – IV at mains voltage < 300 V

D For application class I – III at mains voltage < 600 V

according to VDE 0884, table 2, suitable for:

Switch-mode power supplies, computer peripheral

interface, microprocessor system interface, line

receiver.

These couplers perform safety functions according to the following equipment standards:

D VDE 0884

Optocoupler providing protective separation

D VDE 0805/IEC 950/EN 60950

Office machines (applied for reinforced isolation for

D Approvals:

BSI: BS EN 41003, BS EN 60065 (BS 415)

BS EN 60950 (BS 7002)

Certificate number 7081 and 7402

FIMKO (SETI): EN 60950

Certificate number 41400

Underwriters Laboratory (UL) 1577

recognized-file No E-76222

VDE 0884 Certificate number 94778

VDE 0884 related features:

D Rated impulse voltage (transient overvoltage)

VIOTM = 6 kV peak

D Isolation test voltage (partial discharge test voltage)

Vpd = 1.6 kV

D Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS (848 V peak)

D Rated recurring peak voltage (repetitive)

VIORM = 600VRMS

D Creepage current resistance according to

VDE 0303/IEC 112

Comparative Tracking Index: CTI = 275

General features:

D Isolation materials according to UL94-VO

D Pollution degree 2

(DIN/VDE 0110 part 1 resp IEC 664)

D Climatic classification 55/100/21 (IEC 68 part 1)

D Special construction:

Therefore extra low coupling capacity

typical 0.2 pF, high Common Mode Rejection

D Low temperature coefficient of CTR

D Coupling System A

Order Schematic

Suffix: G = Leadform 10.16 mm

Pin Connection

1

A (+) C (–) nc

B

Absolute Maximum Ratings

Input (Emitter)

Output (Detector)

Coupler

Soldering temperature 2 mm from case, t ≤ 10 s Tsd 260 °C

Maximum Safety Ratings (according to VDE 0884)

Input (Emitter)

Output (Detector)

Coupler

1) This device is used for protective separation against electrical shock only within the maximum safety ratings

This must be ensured by using protective circuits in the applications

Derating Diagram

0

50

100

150

200

300

Tamb ( ° C )

150

94 9182

100

250

Phototransistor Psi ( mW )

IR Diode Isi ( mA )

Electrical Characteristics

Tamb = 25°C

Input (Emitter)

Output (Detector)

Collector emitter

cut-off current

VCE = 10 V, IF = 0 2)

VCE = 30 V, IF = 0 2)

ICEO

ICEO

50 500

nA

mA

Coupler

Isolation test voltage

(RMS)

Collector emitter

saturation voltage

Cut-off frequency VCE = 5 V, IF = 10 mA,

2) Tamb = 100°C

Current Transfer Ratio (CTR)

IC/IF VCE = 10 V, IF = 10 mA 4N25V(G) CTR 0.20 1

IC/IF VCE = 10 V, IF = 10 mA 4N35V(G) CTR 1.00 1.5

IC/IF VCE = 10 V, IF = 10 mA,

Tamb = 100°C

Switching Characteristics (Typical Values)

VS = 5 V

Typeyp RL = 100 W (see figure 1) RL = 1 kW (see figure 2)

Channel I

Channel II

100W

50W

+ 10 V

Oscilloscope

IC = 10 mA ; Adjusted through

input amplitude

IF

IF

RG = 50W

tp

tp = 50 ms

T = 0.01 0

95 10793

Figure 1 Test circuit, non-saturated operation

Channel I Channel II

1 kW

50W

+ 5 V

Oscilloscope

IC

IF = 10 mA

IF

RG = 50W

tp

tp = 50 ms

T = 0.01 0

95 10844

Figure 2 Test circuit, saturated operation

Insulation Rated Parameters (according to VDE 0884)

Partial discharge

test voltage

Lot test (sample test)

tTr = 10 s,

ttest = 60 s

test voltage (sample test) ttest = 60 s

Insulation resistance

VIO = 500 V,

Insulation resistance

VIO = 500 V,

Tamb =150°C

(construction test only)

VIOTM

VPd

VIOWM

VIORM V

t4

t3 ttest

tstres

t2

t1

t 0

13930

tTr = 60 s

t1, t2= 1 to 10 s

t3, t4= 1 s

ttest = 10 s

tstres = 12 s

Figure 3 Test pulse diagram for sample test according to DIN VDE 0884

Typical Characteristics (Tamb = 25 ° C, unless otherwise specified)

0

50

100

150

200

250

300

T amb – Ambient Temperature ( ° C )

96 11700

Coupled device

Phototransistor

IR-diode

Figure 4 Total Power Dissipation vs Ambient Temperature

0.1

1.0

10.0

100.0

1000.0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF – Forward Voltage ( V )

96 11862

Figure 5 Forward Current vs Forward Voltage

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

–30 –20 –10 0 10 20 30 40 50 60 70 80

Tamb – Ambient Temperature ( ° C )

96 11874

VCE=10V

I F =10mA

Figure 6 Rel Current Transfer Ratio vs Ambient Temperature

1 10 100 1000 10000

T amb – Ambient Temperature ( ° C )

96 11875

I – Collector Dark Current, CEO

V CE =10V

I F =0

Figure 7 Collector Dark Current vs Ambient Temperature

0.001 0.010 0.100 1.000

IF – Forward Current ( mA )

96 11876

VCB=10V

Figure 8 Collector Base Current vs Forward Current

0.01 0.10 1.00 10.00 100.00

IF – Forward Current ( mA )

96 11904

V CE =10V

Figure 9 Collector Current vs Forward Current

Typical Characteristics (Tamb = 25 ° C, unless otherwise specified)

0.1

1.0

10.0

100.0

V CE – Collector Emitter Voltage ( V )

96 11905

20mA

10mA 5mA

2mA 1mA

IF=50mA

Figure 10 Collector Current vs Collector Emitter Coltage

0

0.2

0.4

0.6

0.8

1.0

IC – Collector Current ( mA )

100

95 10972

CTR=50%

20%

10%

Figure 11 Collector Emitter Sat Voltage vs Collector Current

200

400

600

800

1000

h – DC Current GainFE

VCE=10V

5V

1 10 100 1000

IF – Forward Current ( mA )

100

95 10976

VCE=10V

Figure 13 Current Transfer Ratio vs Forward Current

0 10 20 30 40 50

IF – Forward Current ( mA )

20

95 10974

Saturated Operation

V S =5V

RL=1k W

t off

ton

Figure 14 Turn on/ off Time vs Forward Current

Operation

VS=10V

RL=100 W

toff

ton

5 10 15 20

Dimensions in mm

Leadform 10.16 mm (G-type)

14771

weight: ca 0.50 g

creeping distance: y 8 mm

after mounting on PC board

Dimensions in mm

14770

creeping distance: y 6 mm

y 6 mm

Ozone Depleting Substances Policy Statement

It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to

1 Meet all present and future national and international statutory requirements

2 Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs )

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years Various national and international initiatives are pressing for an earlier ban

on these substances

TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of

continuous improvements to eliminate the use of ODSs listed in the following documents

1 Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA

3 Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively

TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain

such substances

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications All operating parameters must be validated for each customer application by the customer Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or

unauthorized use

TEMIC TELEFUNKEN microelectronic GmbH, P.O.B 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423