Volume 05 - Surface Engineering Part 10 ppsx

Reference Handbook of Chemical Vapor Deposition, Principles of Chemical Vapor Deposition References cited in this section Handbook of Thin Film Deposition Processes and Techniques, Sol

Metallurgical factors

Anodizing Conditions.

Fig 8 Effect of anodizing conditions on specular reflectance of chemically brightened aluminum Data are for a

5 μm (0.2 mil) anodic coating on 5457 alloy (a) 17 wt% H2SO4 (b) 8.8 wt% H2SO4

Thermal Radiation.

Fig 9 Effect of anodic coating thickness on reflectance of infrared radiation Temperature of infrared radiation

source, 900 °C (1650 °F) : 99.99% Al •: 99.50% Al Courtesy of Aluminum Development Council

Fig 10 Comparison of absorptance of blackbody radiation by anodized aluminum and polished aluminum

Temperature of aluminum surface 530 °R (21 °C, or 70 °F)

Fatigue Strength.

Anodizing Non-Aluminum Substrates

Magnesium Anodizing.

Titanium Anodizing.

Zinc Anodizing.

Thermal Spray Coatings

Robert C Tucker, Jr., Praxair Surface Technologies, Inc

Introduction

Fig 1 Deformation of molten or semimolten particles resulting from spray impacting on a substrate

Fig 2 Typical microstructure of a plasma-sprayed tungsten metal coating showing the splat structure and the

fine crystalline structure within the splats (a) Scanning electron micrograph of a fracture surface (b) Light micrograph of the same coating Courtesy of Praxair Surface Technologies, Inc

Acknowledgements

Metals Handbook,

Processes

Flame spray

Fig 3 Cross sections of typical flame spray guns (a) Wire or rod (b) Powder

Flame spray and fuse

The electric-arc (wire-arc) spray

Fig 4 Typical electric-arc spray device

Plasma Spray.

Fig 5 Plasma spray process Courtesy of Praxair Surface Technologies, Inc

Fig 6 Typical inert-atmosphere and/or low-pressure plasma chamber Courtesy of Metco, Inc

The transferred plasma-arc process

Fig 7 Transferred plasma-arc spraying

High-Velocity Oxyfuel.

Fig 8 High-velocity oxyfuel process Courtesy of Praxair Surface Technologies, Inc

Detonation Gun.

Fig 9 Detonation gun process Courtesy of Praxair Surface Technologies, Inc

Process Comparison.

Ancillary Equipment.

Surface Preparation

Cleaning and Degreasing.

Surface Roughening.

Finishing Treatment

Sealing.

Coating Finishing.

Fig 10 Recommended shapes for carbide and high-speed steel cutting tools used in machining sprayed metal

coatings

Coating Repair.

Quality Assurance

Metallography

μ

μ

μ

μ

Hardness Testing.

Bond Strength Testing.

Health, Safety, and Environmental Concerns

Dust and Fumes.

Fig 12 Microstructure of detonation gun deposited alumina and titania As-polished

Fig 13 Microstructure of a detonation gun deposited tungsten carbide/cobalt cermet coating (a) As-polished

(b) Etched

Fig 14 Microstructure of a mechanically mixed chromium carbide/nickel chromium cermet coating (a)

As-polished.(b) Etched

The mechanical properties

Uses of Thermal Spray Coatings

Wear Resistance.

μ

μ

Chemical Vapor Deposition of Nonsemiconductor Materials

Hugh O Pierson, Consultant

Reference

Handbook of Chemical Vapor Deposition,

Principles of Chemical Vapor Deposition

References cited in this section

Handbook of Thin Film Deposition Processes and Techniques,

Solid State Technology,

CVD Processes and Equipment

In thermal CVD,

Fig 1 Thermal CVD reactor

Plasma CVD

Fig 2 Radio-frequency plasma CVD reactor configured for deposition on silicon wafers

Fig 3 Microwave/electron cyclotron resonance (ECR) plasma CVD reactor

Laser CVD.

Thermal-laser CVD (Ref 12),

Fig 4 Thermal-laser CVD growth mechanism

In photo-laser CVD,

Fig 5 Photo-laser CVD apparatus

Closed-Reactor CVD or Pack Cementation.

Fig 6 Pack-cementation chromizing/siliconizing apparatus Pack material composed of 3 wt% Cr, 11 wt% Si,

0.25 wt% NH4I, and balance, Al2O3

Chemical vapor infiltration (CVI)

Fig 7 Chemical vapor infiltration apparatus Source: Ref 15

Metal-organic CVD (MOCVD)

References cited in this section

Handbook of Chemical Vapor Deposition,

MRS Bulletin,

MRS Bulletin, Surface Modification Technologies An Engineer's

Ceram Eng Sci Proc.,

J Am Ceram Soc.,

Typical CVD Materials and Reactions

The deposition of ceramics

Titanium diboride (Ref 29)

References cited in this section

Handbook of Chemical Vapor Deposition,

Thin Solid Films,

Vacuum,

J Mater Res.,

Thin Solid Films,

Journal

of the Less Common Metals,

Laser Processing and Diagnostics,

J Electrochem Soc.,

App Phys Lett., Int J Refract Hard Metals, Handbook of Carbon, Graphite, Diamond and Fullerenes,

J Am Ceram Soc.,

J Mater Res.,

Chemical Vapor Deposited Coatings,

AIP Conf Proc.,

Proc 11th Int Conf on CVD,

Ceram Bull.,

Proc 11th Int Conf on CVD,

Mater Eng., Proc 11th Int Conf on CVD,

Proc 11th Int Conf on CVD,

Proc 9th Int Conf on CVD,

Int J Refract Hard Metals,

Applications

Wear-, erosion-, and corrosion-resistance applications

The cutting-tool industry

A large variety of free-standing structures

Ultrafine Powders by CVD.

•

•

Ceram Eng Sci Proc., Ceramic Bulletin,

Ceramic Bulletin, Ceramic Bulletin,

Advantages and Disadvantages of CVD

Chemical Vapor Deposition of Semiconductor Materials

Manijeh Razeghi, Northwestern University

Introduction

Fig 1 Typical reactor design for metal-organic chemical vapor deposition Source: Ref 7

The MBE technique

Hybrid MBE and CVD Techniques.

Appl Phys Lett., Jpn J Appl Phys.,

Rev Tech Thomson-C.S.F.,

Appl Phys Lett., Lightwave Technology for Communication,

Metrologia,

Phys Rev B, Appl Phys Lett.,

Appl Phys Lett.,

Semicon Sci Technol.,

Appl Phys Lett.,

Phys Rev Lett.,

Appl Phys Lett., Proc 1987, GaAs and Related Compounds Conf.,

J Cryst Growth,

J Cryst Growth,

J Cryst Growth, Mater Res Soc Symp Proc 37,

Appl Phys Lett.,

Appl Phys Lett.,

Prog Solid State Chem.,

J Appl Phys., Surf Sci.,

Surf Sci., The Technology and Physics of Molecular Beam Epitaxy, Appl Phys Lett.,

Proc Symp GaAs and Related Compounds 1974, Surf Sci.,

J Appl Phys.,

Fig 3 Chemical potential in metal-organic chemical vapor deposition processes (a) General case (b)

Mass-transport limited growth Source: Ref 48

∆H

H AC H AA H CC

Fig 4 Processes involved in the growth of gallium arsenide from trimethylgallium and arsine

Gas Flow Patterns.

Laminar and Turbulent Flow.

p z a r η

Fig 5 Different gas flow patterns possible in chemical vapor deposition reactors (a) Boundary layer of a gas

flowing in a pipe and velocity distribution (b) Stream lines showing adhered flow and break-away flow (c) Flow patterns effected by expansion angle of tubes (d) Effect of Reynolds number on flow properties Source: Ref 48

R

vd ρ η

Fig 6 Gas flow in a horizontal reactor

Effect of Substrate Heating.

p

gC h T a

T o

D A

T D

References cited in this section

Crystal Growth of Electronic Materials, Organometallic Vapor-Phase Epitaxy: Theory and Practice,

J Am Chem Soc., Semiconductors and Semimetals, Inter Rev Science, Inorganic Chemistry, The MOCVD Challenge,

J Luminesc.,

J Cryst Growth,

J Cryst Growth,

J Cryst Growth,

J Cryst Growth, Appl Phys Lett.,

J Electrochem Soc.,

J Electrochem Soc., Shape and Flow,

Boundary Layer Theory, Crystal Growth of Electronic Materials, Philips Res Rep.,

J Electrochem Soc.,

J Electrochem Soc.,

Heterojunction Semiconductors for Electronic Devices,

Fundamentals of Crystal Growth,

The MOCVD Growth Technique

Reactor Systems and Hardware

Tubing, fitting, and valve

Hydrogen Purifier.

Thermal Bath.

Electronic mass-flow controllers

The gas-mixing manifold

Susceptor Heat System.

The exhaust system

Effluent Scrubbing Systems.

x aq

SiH Cl +AsH +HCl →SiO +HCl +AsH +H

aq KMnO

MOCVD Starting Materials

MR ER →R MER

Group V Sources.

≥

Group III-V Semiconductor Growth Parameters

The GaAs-based materials

GaAs layers

Ga x In 1-x As y P 1-y layers

The nitride semiconductors

High-quality GaN films

Aluminum nitride

The antimony-based materials

Indium antimonide

μ μ

Indium thallium antimonide

Other Group III-V materials

Group II-VI Semiconductor Growth Parameters

The wide-bandgap materials

Group IV Semiconductor Growth Parameters

Epitaxial silicon (Si) layers

Single-crystal germanium (Ge)

References cited in this section

Appl Phys Lett.,

J Cryst Growth, Electron Lett.,

Jpn J Appl Phys., Appl Phys Lett.,

Appl Phys Lett.,

J Appl Phys.,

J Appl Phys., Appl Phys Lett.,

Proc 10th Int Conf CVD,

Chemically Vapor Deposited Coatings,

Appl Phys Lett., Appl Phys Lett.,

IEEE Trans Electron Dev., Solid State Technol.,

J Appl Phys.,

J Appl Phys.,

J Electrochem Soc., Thin Film Processes II, RCA Review,

Proc 11th Conf CVD,

Proc 5th European Conf on CVD,

Proc 11th Int Conf on CVD, Diss Abst Int.,

Plasma-Enhanced Chemical Vapor Deposition

Prabha K Tedrow, Consultant; Rafael Reif, Massachusetts Institute of Technology

Introduction

J Appl Phys., Proceedings of the Ninth International Conference on Chemical Vapor Deposition,

Process Description

•

Fig 1 Activation energy diagram for thermally driven (solid line) and plasma-enhanced (dashed line) chemical

vapor deposition reactions A and B, initial and final energy states, respectively, for the thermally driven reaction; ∆ E, activation energy; A*, B*, ∆ E*, corresponding parameters for the plasma-enhanced reaction Source: Ref 11

References cited in this section

J Vac Sci Technol., Handbook of Plasma Processing Technology,

Appl Phys Lett.,

Thin Film Processes II,

Techniques and Applications of Plasma Chemistry,

Types of PECVD Systems

In a direct PECVD system,

Fig 2 Schematic of a direct plasma cold-wall reactor Source: Ref 17, 22

Remote PECVD Systems.

Fig 3 Schematic of a remote plasma-enhanced chemical vapor deposition reactor for depositing compound

semiconductor films TMG, trimethylgallium Source: Ref 23

Hybrid PECVD systems

!

References cited in this section

The Electrochem Soc Extended Abstracts, Microelectronic Materials and Processes,

Semiconductor International, Research and Development,

Solid State Technol., Semiconductor International,

Proceedings of the Seventh International IEEE Level Interconnection Conference

Multi-J Vac Sci Technol A,

J Appl Phys., Proceedings of the Tenth International Conference on Chemical Vapor Deposition,

PECVD of Dielectric Films

Silicon nitride films

Silicon oxynitride films

References cited in this section

Solid State Technology,

Thin Film Processes II,

Proceedings of the Seventh International IEEE Level Interconnection Conference

Multi-Solid State Technol.,

J Electrochem Soc.,

IEDM Tech Digest,

J Vac Sci Technol., Reduced Temperature Processing for VLSI,

J Electrochem Soc.,

J Electrochem Soc.,

Solid State Technol.,

J Electrochem Soc.,

J Electrochem Soc., Reduced Temperature Processing for VLSI,

J Electrochem Soc.,

PECVD of Amorphous and Polycrystalline Silicon Films

Amorphous Silicon Films.

Polycrystalline Silicon Films.

Fig 4 Arrhenius plots of growth rates of polycrystalline silicon films deposited on oxidized silicon wafers with

and without plasma enhancement LPCVD, low-pressure chemical deposition; PECVD, plasma-enhanced chemical vapor deposition Source: Ref 41

Epitaxial Films.

Fig 5 Reactor for plasma-enhanced chemical vapor deposition of epitaxial silicon films QMS, quadruple mass

spectrometer Source: Ref 48

Conductive Films.

μΩ μΩ

References cited in this section

J Appl Phys.,

Appl Phys Lett., Appl Phys Lett.,

J Appl Phys.,

Growth and Growth-Related Properties of Films Formed by Physical Vapor Deposition

Donald M Mattox, IP Industries

Introduction

• Substrate surface condition

• Details of the deposition process and system geometry

• Details of film growth on the substrate surface

• Postdeposition processing and reactions

Technological (Real) Surfaces

Technological surfaces engineering surfaces

• Surface chemistry

• Contamination

• Surface morphology

• Mechanical properties

• Outgassing and outdiffusion

• Homogeneity of the surface

Fig 1 Surface morphology effects on pinhole formation

Surface preparation

Reference cited in this section

Deposition

Processes for Films and Coating,

Atomistic Film Growth

Vaporization

Transport

Condensation and Nucleation

sticking coefficient

Surface Mobility.

Fig 2 Surface morphology of an as-sintered 96% alumina ceramic such as is used in hybrid circuitry 1000×

Nucleation at Preferential Nucleation Sites.

Nucleation of Unstable Surfaces.

The temperature coefficient of resistance (TCR)

Surface Analytical Techniques.

Modification of Nucleation Density

•

Nuclei Coalescence and Agglomeration.

epitaxial growth

Heating by Condensation.

• Heat of vaporization or sublimation

• Energy to cool to ambient

• Energy associated with reaction

• Energy released on solution

Fig 3 Types of interfacial regions

The abrupt interface

Mechanical Interlocking Abrupt Interface.

The diffusion interface

Kirkendall porosity

Compound Interface.

Interfacial Boundary.

The interphase material

Fig 4 Structure-zone model for sputter-deposited films (Ref 33)

SZM Zone 1.

o

Fig 5 Columnar morphologies of (a) sputter-deposited stainless steel and (b) vacuum-deposited aluminum

Fig 6 Picture of a "nodule" in a thick sputter-deposited chromium film

SZM Zone T.

SZM Zone 2.

SZM Zone 3.

Surface Morphology Effects on Film Morphology.

Residual Gas Effects on Film Growth.

Changes in Microstructure and Morphology during Deposition

•

•

•

•

Codeposition of Alloying, Impurity, or Dopant Species.

Periodic Injection of Reactive Gas.

The angle of incidence of the adatom flux

Mechanical Disruption during Deposition.

Changing Gas Pressure during Deposition.

Concurrent Massive Energetic Particle Bombardment.

•

•

•

•

References cited in this section

Handbook of Thin Film Technology,

Deposition Processes for Films and Coating,

Ann Rev Mater Sci.,

J Vac Sci Technol B, Surf Sci Rep.,

Surface Mobilities on Solid Materials Fundamental Concepts and Applications,

Principles of Surface Chemistry,

J Vac Sci Technol.,

Handbook of Plasma Processing Technology Fundamentals, Etching, Deposition and Surface Interactions,

Crit Rev Solid State Mater Sci.,

Thin Solid Films, Appl Surf Sci.,

J Vac Sci Technol A,

Materials Characterization, Metals Handbook,

Crit Rev Solid State Mater Sci.,

Appl Optics,

Nucl Instrum Methods Phys Res B,

J Cryst Growth,

J Vac Sci Technol A,

Solid State Technol.,

Plasma Chem Plasma Process.,

Rep Prog Phys.,

Surf Sci.,

Crit Rev Solid State Mater Sci.,

ASTM Proc Conf Adhesion Measurement of Thin Films, Thick Films and Bulk Coatings,

Thin Solid Films, Solid State Electronics,

J Mater Res.,

Society of Vacuum Coaters Ann Tech Conf Proc., Opportunities and Research Needs in Adhesion Science and Technology,

Phys Met Metallogr (USSR),

Ann Rev Mater Sci.,

J Vac Sci Technol A,

Thin Solid Films,

Dispersed Phase Composites.

Deposition of Intermetallic Materials

References cited in this section

Appl Surf Sci.,

Nucl Instrum Methods Phys Res B,

Plasma Chem Plasma Process.,

Handbook of Plasma Processing Technology: Fundamentals, Etching, Deposition and Surface Interactions,

React Kinet Catal Lett.,

Crit Rev Solid State Mater Sci.,

J Vac Sci Technol.,

J Vac Sci Technol B,

J Vac Sci Technol.,

Appl Phys Lett., Thin Solid Films,

J Vac Sci Technol.,

Surf Coat Technol.,

IEEE/IRPS,

Plasma Deposition, Treatment and Etching of Polymers,

Metall Trans.,

Acta Metall.,

Postdeposition Processing

Postdeposition heating