Iec 60747 2 2016

varyin voltage oc ur in d rin the f orward recovery time af ter in tantane u switc in from zero or a sp cif ied reverse voltage to a sp cif ied f orward c r ent hig est in tantane u valu

Semiconduct or dev ices –

Part 2: Discret e dev ices – R ectifier diodes

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Semiconduct or dev ices –

Part 2: Discret e devices – R ectifier diodes

Disposit ifs à semiconducteurs –

Part ie 2: Disposit ifs discrets – Diodes de redressement

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FOREWORD 5

1 Sco e 7

2 Normative ref eren es 7

3 Terms an def i ition 7

3.1 General terms an def i ition 7

3.2 Voltages 8

3.3 Cur ents 9

3.4 Power dis ip tion 10 3.5 Switc in c aracteristic 1

4 L ter s mb ls 14 4.1 General 14 4.2 List of let er s mb ls 14 4.2.1 Voltages 14 4.2.2 Cur ents 14 4.2.3 Powers 15 4.2.4 Switc in 15 5 Es ential ratin s an c aracteristic 16 5.1 General 16 5.2 Ratin s (l mitin con ition ) 16 5.2.1 Storage temp rature (T stg ) 16 5.2.2 Op ratin ambient or he tsin or case or ju ction temp rature (T a or T s or T c or T vj ) 16 5.2.3 Non- e etitive p ak reverse voltage (V SM ) 16 5.2.4 Re etitive p ak reverse voltage (V RM ) (where a pro riate) 16 5.2.5 Contin ou (direct reverse voltage (V R ) (where a pro riate) 16 5.2.6 Me n f orward c r ent (I F(AV) 16 5.2.7 R.M.S f orward c r ent (I F(R.M.S.) 16 5.2.8 Re etitive p ak forward c r ent (I FRM ) (where a pro riate) 16 5.2.9 Non- e etitive s rge f orward c r ent (I FSM ) 16 5.2.10 Contin ou (direct forward c r ent (I F ) 17 5.2.1 Pe k case non- upture c r ent (I RSMC ) (where a pro riate) 17 5.2.12 Non- e etitive s rge reverse p wer dis ip tion (P RSM ) (for avalan he rectif ier diodes) 1

7

5.2.13 Re etitive p ak reverse p wer dis ip tion (P

RRM ) (f or avalan he

rectif ier diodes) 17

5.2.14 Me n reverse p wer dis ip tion (P

R(AV)

(f or avalan he rectif ier diodes)

17

5.2.15 Mou tin torq e (M) (where a pro riate) 17

5.2.16 Clampin f orce (F) f or dis typ diodes (where a pro riate) 17

5.3 Characteristic 17

5.3.1 General 17

5.3.2 Forward voltage (V

F ) 17

5.3.3 Pe k f orward voltage (V

FM ) (where a pro riate) 18

5.3.4 Bre k own voltage (V

(BR) (of an avalan he rectif ier diode) 18

5.3.5 Contin ou (direct reverse c r ent (I

R(D) 18

5.3.6 Re etitive p ak reverse c r ent (I

RRM ) (where a pro riate) 18

5.3.8 Total ca acitive c arge (Q

C ) (where a pro riate) 18

5.3.9 Pe k reverse recovery c r ent (I

r m ) (where a pro riate) 18

5.3.10 Reverse recovery time (

r ) (where a pro riate) 19

5.3.1 Reverse recovery energ (E

r

) (where a pro riate) 1

9 5.3.12 Forward recovery time ( f r ) (where a pro riate) 19 5.3.13 Pe k f orward recovery voltage (V FRM ) (where a pro riate) 19 5.3.14 Reverse recovery sof tnes f actor (S r ) (where a pro riate) 19 5.3.15 Thermal resistan e (R th ) 19 5.3.16 Tran ient thermal imp dan e (Z th (t )) (where a pro riate) 19 6 Me s rin an test method 19 6.1 Me s rin method for electrical c aracteristic 19 6.1.1 General 19 6.1.2 Forward voltage (V F , V FM ) 2

6.1.3 Bre k own voltage (V (BR) of avalan he rectif ier diodes 2

6.1.4 Reverse c r ent (I R ) 2

6.1.5 Re etitive p ak reverse c r ent (I RRM ) 2

6.1.6 Recovered c arge, reverse recovery time, reverse recovery energ an sof tnes factor (Q r , t r , E r , S r ) 2

6.1.7 Forward recovery time ( f r ) an p ak f orward recovery voltage (V frm ) 3

6.1.8 Total ca acitive c arge (Q C ) 3

6.2 Me s rin method for thermal c aracteristic 3

6.2.1 General 3

6.2.2 Thermal resistan e (R th(j- ) an tran ient thermal imp dan e (Z th(j -r) t ) 3

6.3 Verif i ation test method f or ratin s (l mitin values) 3

6.3.1 Surge (non- e etitive) forward c r ent (I FSM ) 3

6.3.2 Non- e etitive p ak reverse voltage (V SM ) 3

6.3.3 Pe k reverse p wer (re etitive or non- e etitive) (P RRM , P RSM ) of avalan he rectif ier diodes 3

6.3.4 Pe k case non- upture c r ent (I RSCM ) 41

7 Req irements for typ tests, routine tests an en uran e tests; markin of rectif ier diodes 4

7.1 Typ tests 4

7.2 Routine tests 4

7.3 Me s rin an test method 4

7.4 Markin of ectif ier diodes 4

7.5 En uran e test 4

7.5.1 List of en uran e tests 4

7.5.2 Con ition for en uran e tests 4

7.5.3 Ac e tan e-defi in c aracteristic an ac e tan e criteria f or en uran e tests 4

7.5.4 Ac e tan e-defi in c aracteristic an ac e tan e criteria f or rel a i ty tests 4

Fig re 1 – Voltage waveform d rin forward recovery, sp cifi ation method I 1

Fig re 2 – Voltage waveform d rin forward recovery, sp cifi ation method I 1

Fig re 3 – Cur ent wavef orm d rin reverse recovery 12

Fig re 4 – Diode turn-of f , voltage, c r ent an recovered c arge 13

Fig re 5 – Reverse voltage ratin s 14

Fig re 6 – Forward c r ent ratin s 15

Fig re 7 – Recovered c arge Q

r , p ak reverse recovery c r ent I

r m , reverse recovery

time t

r (ide lzed c aracteristic ) 18

Fig re 8 – Circ it diagram f or the me s rement of f orward voltage (d.c method) 2

Fig re 9 – Circ it diagram f or the me s rement of f orward voltage (os i os o e method) 21

Fig re 10 – Gra hic re resentation of on-state voltage vers s c r ent c aracteristic 21

Fig re 1 – Circ it diagram for f orward voltage me s rement (pulse method) 2

Fig re 12 – Circ it diagram for bre k own voltage me s rement 2

Fig re 13 – Circ it diagram f or reverse c r ent me s rement 2

Fig re 14 – Circ it diagram for p ak reverse c r ent me s rement 2

Fig re 15 – Circ it diagram f or recovered c arge me s rement, half sin soidal wave method 2

Fig re 16 – Cur ent wavef orm throu h the diode D d rin recovered c arge me s rement, half sin soidal wave method 2

Fig re 17 – Circ it diagram f or recovered c arge me s rement, rectan ular wave method 2

Fig re 18 – Cur ent wavef orm throu h the diode D recovered c arge me s rement, rectan ular wave method 2

Fig re 19 – Circ it diagram f or f orward recovery time me s rement 3

Fig re 2 – Cur ent wavef orm f orward recovery time me s rement 3

Fig re 21 – Voltage wavef orm f orward recovery time me s rement 31

Fig re 2 – Circ it diagram for total ca acitive c arge me s rement 3

Fig re 2 – Circ it diagram for thermal imp dan e me s rement 3

Fig re 2 – Calbration c rve s owin a typical variation of the f orward voltage V F at a low me s rin c r ent I 2 with the case temp rature T c (when he ted f rom outside, i.e T c = T vj ) 3

Fig re 2 – Circ it diagram for s rge f orward c r ent me s rement 3

Fig re 2 – Circ it diagram for p ak reverse voltage me s rement 3

Fig re 2 – Circ it to verif y p ak reverse p wer of avalan he rectif ier diodes 3

Fig re 2 – Trian ular reverse c r ent waveform 3

Fig re 2 – Sin soidal reverse c r ent waveform 3

Fig re 3 – Rectan ular reverse c r ent wavef orm 4

Fig re 31 – Verif i ation of P RSM reverse p wer vers s bre k own 41

Fig re 3 – Circ it diagram for case non- upture c r ent me s rement 4

Fig re 3 – Waveform of the reverse c r ent i R throu h the diode u der test 4

Ta le 1 – Minimum typ an routine tests f or rectif ier diodes 4

Ta le 2 – Ac e tan e-def i in c aracteristic for ac e tan e af ter en uran e tests 4

INTERNATIONAL ELECTROTECHNICAL COMMISSION

Part 2: Discrete devices – Rectif ier diodes

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International Stan ard IEC 6 7 7-2 has b en pre ared by s bcommite 4 E: Dis rete

semicon u tor devices, of IEC tec nical commit e 4 : Semicon u tor devices

This third edition can els an re laces the secon edition publ s ed in 2 0 This edition

con titutes a tec nical revision

This edition in lu es the f olowin sig if i ant tec nical c an es with resp ct to the previou

edition:

a) Sc ot k b r ier diodes an its pro erties are ad ed;

b) Clau es 3, 4, 5 an 7 were amen ed with some deletion of information no lon er in u e

or alre d in lu ed in other p rts of the IEC 6 7 7 series, an with some neces ary

ad ition ;

c) Clau e 6 was moved an ad ed to Clau e 7 of this third edition;

d) some p rts of Clau e 7 were moved an ad ed to Clau e 7 of this third edition;

e) An ex A was deleted

This stan ard is to b u ed in conju ction with IEC 6 7 7-1:2 0 an Amen ment 1: 2 10

The text of this stan ard is b sed on the fol owin doc ments:

Ful information on the votin for the a proval of this stan ard can b f ou d in the re ort on

votin in icated in the a ove ta le

This publ cation has b en draf ted in ac ordan e with the ISO/IEC Directives, Part 2

A l st of al p rts in the IEC 6 7 7 series, publs ed u der the general title Semic ndu tor

d evic s, can b fou d on the IEC we site

Future stan ard in this series wi car y the new general title as cited a ove Titles of existin

stan ard in this series wi b updated at the time of the next edition

The commit e has decided that the contents of this publ cation wi remain u c an ed u ti

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The f ol owin doc ments, in whole or in p rt, are normatively referen ed in this doc ment an

are in isp n a le for its a pl cation For dated ref eren es, only the edition cited a pl es For

u dated ref eren es, the latest edition of the referen ed doc ment (in lu in an

amen ments) a pl es

IEC 6 0 0-5 1, I ntern tio al Electrotec nic l Vo a ulary – P art 521: Semico du tor d evic s

a d integrated circ its (avai a le at htp:/www.electro edia.org)

IEC 6 7 7-1:2 0 , Semico ductor devic s – P art 1: Ge eral

IEC 6 7 7-1:2 0 /AMD1: 2 10

IEC 6 7 9-2 , Semic nductor d evic s – Mec a ic l a d c matic test meth ds – P art 2 : H ig

temp rature o erating life

IEC 6 7 9-3 , Semic nd uctor d evic s – Me h nic l a d climatic te t methods – P art 3 :

direction of the f low of contin ou (direct c r ent in whic a semicon u tor diode has the

lower resistan e

3.1.2

re ers dire tion

direction of the f low of contin ou (direct c r ent in whic a semicon u tor diode has the

hig er resistan e

varyin voltage oc ur in d rin the f orward recovery time af ter in tantane u switc in from

zero or a sp cif ied reverse voltage to a sp cif ied f orward c r ent

hig est in tantane u value of the reverse voltage, in lu in al re etitive tran ient voltages,

but ex lu in al non- e etitive tran ient voltages

Note 1 to e try: Se Fig re 5

3.2.6

non-repetitiv pe k re ers volta e

p ak tran ient reverse voltage

V

RSM

hig est in tantane u value of an non- e etitive tran ient reverse voltage

Note 1 to e try: Th re etitiv v lta e is u u ly a fu ctio of th circ it a d in re s s th p wer dis ip tio of

th d vic A n n-e etitiv tra sie t v lta e is u u ly d e to a e tern l c u e a d it is a s me th t its eff ect

h s c mpletely dis p e re b fore th n xt tra sie t ariv s

r.m.s value of the forward c r ent over one complete c cle of the o eratin freq en y

Note 1 to e try: Wh re n ambig ity aris s, I

f orward c r ent pulse of s ort time d ration an sp cif ied waves a e, whose a pl cation

cau es or would cau e the maximum rated ju ction temp rature to b ex e ded, but whic is

as umed to oc ur rarely an with a l mited n mb r of s c oc ur en es d rin the service l fe

of the device an to b a con eq en e of u u ual circ it con ition (for example a fault

3.3.10

pe k c s non-rupture c r e t

I

RSMC

p ak value of reverse c r ent that s ould not b ex e ded in order to avoid burstin of the

case or the emis ion of a plasma b am u der sp cif ied con ition of c r ent, waves a e an

time

Note 1 to e try: This d finitio imple th t a fin cra k in th c s mig t b fo n in a d vic s bje te to th

p a c s n n-u ture c re t, pro id d th t n pla ma b am wa emite Parts of th c s s al n t bre k awa ,

n r s al th d vic melt e tern ly or b rst into f l me

me n value of the prod ct of the in tantane u forward voltage an the in tantane u

f orward c r ent averaged over a f ul c cle

p wer dis ip ted within the diode d rin the c an e b twe n reverse voltage an forward

c r ent when the diode is switc ed from a reverse voltage to a f orward c r ent

3.4.6

re ers re ov ry dis ipation

P

r

p wer dis ip ted within the diode d rin the c an e b twe n f orward c r ent an reverse

voltage when the diode is switc ed from a forward c r ent to a reverse voltage

3.4.7

s rge re ers power dis ipation

P

RSM

< valan he rectif ier diodes> p wer whic is dis ip ted within the diode res ltin from s rges

oc ur in when it is o eratin in the reverse direction

3.4.8

repetitiv pe k re ers power dis ipation

P

< valan he rectif ier diodes> p wer whic is dis ip ted within the diode res ltin f rom

re etitive p ak c r ents when it is o eratin in the reverse direction

3.4.9

me n re ers power dis ipation

P

R(A )

< valan he rectif ier diodes> p wer whic is dis ip ted within the diode res ltin f rom

con tant reverse c r ent or as a me n value of a p riodical fun tion when it is o eratin in the

time interval b twe n the in tant when the forward voltage rises throu h a sp cif ied f irst value

an the in tant when it fal s f rom its p ak value V

fm

to a sp cif ied secon value close to the

f i al sta le value of forward voltage (as s own in Fig re 1), or when the extra olated forward

voltage re c es zero (as s own in Fig re 2), up n the a pl cation of a sp cif ied ste of

f orward c r ent fol owin a zero-voltage or other sp cif ied reverse-voltage con ition

Figure 1 – Volta e wa eform during f or ward re ov ry, spe ific tion method I

Figure 2 – Volta e wa ef orm during f or ward re ov ry, spe if ic tion method I

Note 1 to e try: Sp cific tio meth d I Th s e ifie f irst a d s c n v lu s refere to in th d f i itio are

u u ly 10 % a d 1 0 %, re p ctiv ly, of th fin l sta le v lu (V

a s own in g n ralz dform in Fig re 2

Note 3 to e try: Meth d I is prefere for V

[SOURCE: IEC 6 0 0-5 1:2 0 , 5 1-0 -2 , modif ied — revised to relate only to f orward

voltage; notes to entry an fi ures ad ed]

3.5.2

re ers re ov ry time

t

time interval b twe n the in tant when the c r ent p s es throu h zero, when c an in from

the forward direction to the reverse direction, an the in tant when the extra olated reverse

c r ent re c es zero (as s own in Fig re 3)

Figure 3 – Cur e t wa ef orm during re ers re ov ry

Note 1 to e try: Th e tra olatio is c rie o t with re p ct to s e ifie p ints A a d B a s own in g n rals d

form in Fig re 3.Point A is ofte s e if i d at 9 % of I

rm, a d p int B at2 % of I

rm

[SOURCE: IEC 6 0 0-5 1:2 0 , 5 1-0 -2 , modif ied — revised to relate only to c r ent with

sp cif ied l mits of the time f un tion; notes to entry an f i ures ad ed]

3.5.3

re ers re ov ry c r e t ris time

t

r

time interval b twe n the b gin in of the reverse recovery time an the in tant when the

reverse recovery c r ent re c es its p ak value af ter in tantane u switc in f rom a sp cified

f orward c r ent to a sp cified reverse voltage

3.5.4

rev rs re ov ry c r e t f al time

t

f

time interval b twe n the in tant when the reverse recovery c r ent re c es its p ak value

an the en of reverse recovery time after in tantane u switc in from a sp cif ied f orward

c r ent to a sp cif ied reverse voltage

3.5.5

Q

r

total c arge recovered f rom the diode d rin a sp cif ied integration time af ter switc in from

a sp cified forward c r ent con ition to a sp cif ied reverse con ition:

⋅

=i0

0d

rtt

t

tiQ

s own in Fig re 4)

Figure 4 – Diode turn-of f , volta e, c r e t a d re ov re c arge

Note 1 to e try: This c arg in lu e c mp n nts d e tob th c rier stora e a d d pletio la er c p cita c

[SOURCE: IEC 6 0 0-5 1:2 0 , 5 1-0 -18, modif ied — revised to relate only to diode an

ad ed integration time; formula an f i ure ad ed]

switc in energ whic res lts from the integration of the prod ct from device voltage an

c r ent d rin the integration time t

a solute value of the ratio of the rate of rise of the reverse recovery c r ent when p s in

throu h zero to the maximum rate of f al of the recovery c r ent

mar

0r

r

)/d(d

)/d(d

ti

ti

rt

Figure 6 – Forward c r e t rating

5 Essential ratings and c aracteristics

Man of the ratin s an c aracteristic are req ired to b q oted at a temp rature of 2 °C

an at one other sp cif ied temp rature

5.2 Ratin s (l miting conditions)

5.2.1 Stora e temperature (T

stg)

Minimum an maximum values

5.2.2 Operatin ambie t or he tsink or c s or jun tion temperature (T

Minimum an maximum values

NOT Th c s temp rature is n rmaly me s re o th b d of th d vic For s me re tifier dio e , th

temp rature is s e ifie o o e of th termin ls

5.2.3 Non-repetitiv pe k re ers volta e (V

RSM)

Maximum value of a pulse of reverse voltage with a half -wave sin soidal wavef orm, the

d ration of whic has to b sp cif ied

5.2.4 Repetitiv pe k re ers volta e (V

) (where appro riate)

Maximum value of re etitive reverse voltage pulses, with half -wave sin soidal waveform,

whose d ration an re etition rate have to b sp cified

5.2.5 Continuou (dire t) re ers volta e (V

R) (where ap ro riate)

Maximum value

5.2.6 Me n f orward c r e t (I

(AV))

A c rve s owin maximum values vers s ambient or case temp rature for sin le-phase

half -wave circ it with resistive lo d at a sp cif ied freq en y Alternatively c rves for other

wave forms may b given

5.2.7 R.M.S forward c r e t (I

(R.M.S.)

Maximum value at a sp cified ambient or sin or case an virtual ju ction temp rature

5.2.8 Repetitiv pe k f or ward c r e t (I

R) (where appropriate)

Maximum value at a sp cified ambient or sin or case an virtual ju ction temp rature

5.2.9 Non-repetitiv s rge f orward c r e t (I

SM)

Maximum value at initial con ition cor esp n in to maximum virtual ju ction temp rature, a

sp cif ied d ration an a s bseq ently a pl ed reverse voltage In ad ition, f i ures

cor esp n in to lower initial virtual ju ction temp ratures may b given

Surge c r ent ratin s s ould b given f or the f olowin time p riod :

a) For times smal er than one half -c cle (at 5 Hz or 6 Hz), but gre ter than a proximately

1 ms, in terms of maximum rated value of

i d2

∫

These ratin s may b given by me n of a c rve or by sp cif ied values No immediate

s bseq ent a pl cation of everse voltage is as umed

b) For times eq al to, or gre ter than, one half-c cle an smal er than 15 c cles (at 5 Hz or

6 Hz) in the f orm of a c rve s owin the maximum rated s rge c r ent vers s time

These ratin s s ould pref era ly b given f or a reverse voltage of 8 % of the maximum

re etitive p ak reverse voltage Ad itional ratin s may b given for reverse voltage

Ad itional ratin s may b given f or reverse voltages of 5 % or 10 % of the maximum

re etitive p ak reverse voltage

c) For a time eq al to one c cle with no reverse voltage a pl ed

5.2.10 Continuou (dire t) f orward c r e t

(I )

Maximum value at a sp cified ambient or sin or case an virtual ju ction temp rature

5.2.1 Pe k c s non-rupture c r e t (I

RSMC) (wh re appropriate)

Maximum value for a sp cif ied pulse d ration an s a e an at a sp cif ied startin case

temp rature, prefera ly maximum

5.2.12 Non-repetitiv s rge re ers power dis ipation (P

RSM) (f or a ala c e re tif ier

diode )

Maximum value f or a sp cif ied wave s a e ( rian ular, sin soidal or rectan ular) an d ration,

at maximum virtual ju ction temp rature

5.2.13 Repetitiv pe k re ers power dis ipation (P

) (f or a ala c e re tifier diode )

Maximum value f or a sp cif ied wave s a e ( rian ular, sin soidal or rectan ular), d ration

an d ty c cle an a sp cified ambient or case temp rature with zero f orward dis ip tion

5.2.14 Me n re ers power dis ipation (P

R(AV)) (f or a ala c e re tifier diod s)

Maximum value at sp cif ied wave s a e ( rian ular, sin soidal or rectan ular), d ration an

d ty c cle an a sp cif ied ambient or case temp rature with zero forward dis ip tion

5.2.15 Mountin torqu (M) (where ap ro riate)

Minimum an maximum values

5.2.16 Clamping f orc (F) f or dis type diode (where appropriate)

Minimum an maximum values an the stif f nes of the mou tin s rface s al b sp cif ied

5.3 Chara teristic

Characteristic s al b given at T

vj

= 2 °C ex e t where otherwise stated an at one other

sp cif ied temp rature

5.3.2 For ward volta e (V

F)

Maximum value at the rated contin ou (direct forward c r ent

5.3.3 Pe k f orward volta e (V

FM) (wh re appropriate)

Maximum value at a c r ent of p times the rated me n f orward c r ent

NOT In te d of p th v lta e c n b s e if i d at 3 time th rate c re t a wel

(BR)) (of a a ala c e re tif ier diode)

Minimum value for a sp cified c r ent

5.3.5 Continuous (direct) re ers c r e t (I

R(D))

Maximum value at a sp cif ied hig reverse voltage at the maximum virtual ju ction

temp rature

R

is u e a as n n m of I

R(D)

5.3.6 Repetitiv pe k re ers c r e t (I

) (where appropriate)

Maximum value at the rated re etitive p ak reverse voltage

r) (where ap ropriate)

Maximum value, or maximum an minimum values, u der the f ol owin sp cif ied con ition :

a) f orward c r ent, pref era ly eq al to the maximum me n f orward c r ent;

b) decl ne rate of f orward c r ent –di

F/dt;

c) reverse voltage, prefera ly 5 % of the maximum rated re etitive p ak reverse voltage;

d) ju ction or case or he tsin temp rature

Figure 7 – Re ov re c arge Q

r, pe k re ers re ov ry c r e t I

rm,

re ers re ov ry time t

r(ide l ze c ara teristic )

5.3.8 Total c pa itiv c arge (Q

C) (where ap ro riate)

Maximum value u der the f ol owin con ition :

a) reverse voltage, prefera ly 6 % of the maximum rated re etitive p ak reverse voltage

b) ju ction or case or he tsin temp rature

5.3.9 Pe k re ers re ov ry c r e t (I

r m) (where appropriate)

Maximum value u der the con ition as sp cified f or recovered c arge (se Fig re 7)

5.3.10 Re ers re ov ry time (

r) (wh re appropriate)

Maximum value u der the con ition as sp cified f or recovered c arge (se Fig re 7)

r) (where ap ro riate)

Typical value u der the con ition as sp cif ied for recovered c arge

5.3.12 For ward re ov ry time (

fr) (wh re appropriate)

Maximum value u der the f ol owin sp cif ied con ition :

a) ju ction temp rature (T

vj);

b) contin ou (direct f orward c r ent (I

F);

c) risin rate di

F/dt of the f orward c r ent pulse

5.3.13 Pe k f or ward re ov ry volta e (V

FR) (where ap ro riate)

Maximum value u der con ition as sp cif ied for forward recovery time

5.3.14 Re ers re ov ry sof tne s fa tor (S

r) (where ap ropriate)

c) reverse voltage, 5 % of the maximum rated re etitive p ak reverse voltage;

d) RC dampin network (s ub er) in lu in sig if i ant p rasitic comp nents, where

a pro riate;

e) ju ction temp rature

The d ration of the forward c r ent pulse has to b s ff icient to en ure car ier den ity

eq i brium

5.3.15 Th rmal re ista c (R

th)

Maximum value b twe n ju ction an case f or case rated devices or ju ction an he tsin for

he tsin rated devices or ju ction to ambient for ambient rated devices

5.3.16 Tra sie t thermal impe a c (Z

th(t)) (where appropriate)

A c rve s owin maximum tran ient thermal imp dan e vers s time, exten in f rom

ste d -state value down to 1 ms or les , or, alternatively, a mathematical relation

6 Measuring and test methods

6.1 Me s rin methods f or ele tric l c ara teristic

Stray ca acitan es for a.c me s rements method s ould b avoided In ad ition, resid al

in u tan e s ould b ke t as low as p s ible, esp cialy for hig c r ent devices an pulsed

me s rement method

DC me s rements s ould b p rformed only af ter thermal eq i brium has b en re c ed For

s ort pulses at low d ty c cle, the virtual ju ction temp rature may b con idered to b eq al

to the ambient or case temp rature

6.1.2 For ward volta e (V

F, V

FM)

Figure 8 – Circ it dia ram f or the me s reme t

of f or ward volta e (d.c method)

Circ it d es riptio a d re uireme ts

D = diode b in me s red

R = protective resistor

G = d.c source

M ea ureme t pro edure

The co l n con ition are adju ted to the sp cif ied ambient, case or ref eren e-p int

temp rature The sp cif ied f orward c r ent is a pled throu h the diode for a time u ti

thermal eq i brium is re c ed The f orward voltage dro V

F

acros the diode terminals is

me s red u der sp cified con ition

Sp cified c nditio s

of a rectif ier diode u der a.c con ition an to me s re

the p ak forward voltage V

Figure 9 – Circ it dia ram f or the me s reme t

of f orward volta e (os i los ope method)

Circ it d es riptio a d re uireme ts

M ea ureme t pro edure

A half -sine wave c r ent is a pl ed to the diode b in me s red in the forward direction u ti

thermal eq i brium is re c ed The voltage-c r ent c rve is displayed on an os i os o e The

mag itu e of the c r ent source is set to the req ired value f or the V

F

or V

FM

sp cif i ation

Due to the semicon u tor ca acitan es the os i os o e s ows a h steresis c rve The turn

p int is eq al to the static on state voltage (se Fig re 10)

NOT A s q e c of c re t h lfwa e with risin ma nitu e giv s a s rie of turn p ints, whic c re p n s to

th static f orward c ara teristic

Figure 10 – Graphic repre e tation of on-state

volta e v rs s c r e t c ara teristic

Sp cified c nditio s

To meas re the forward voltage V

volta e me s reme t (puls method)

Circ it d es riptio a d re uireme ts

M ea ureme t pro edure

The pulse generator voltage is set initialy to zero

Temp rature con ition are set to the sp cified value

The sp cif ied f orward c r ent is then set by in re sin the voltage of the pulse generator; the

f orward voltage is me s red on the os i os o e

Pe k re din in truments may b u ed in te d of the os i os o e, but they s al b

in truments that al ow me s rement of the p ak forward voltage at the time the f orward

c r ent re c es its p ak value

Sp cified c nditio s

The values of the fol owin con ition s ould b stated:

b) ambient, case or ref eren e-p int temp rature.

6.1.3 Bre k own volta e (V

(BR)) of a ala c e re tif ier diode

Figure 12 – Circ it dia ram f or bre k own volta e me s reme t

Circ it d es riptio a d re uireme ts

D = diode b in me s red

R = non-in u tive cal brated resistor

G = d.c source

The pulse len th an the d ty c cle of the con tant c r ent generator s ould b s c that

negl gible internal he tin of the diode oc urs

M ea ureme t pro edure

The temp rature is set to the sp cif ied value

The generator output is in re sed to o tain the sp cif ied value of everse c r ent

The bre k own voltage is re d from the p ak re din in trument

Sp cified c nditio s

a) ambient, case, referen e-p int or virtual ju ction temp rature (T

a, T

c, T

ref, T

vj);

b) reverse c r ent (I

R)

6.1.4 Re ers c r e t (I

R)

P urp s

IEC

Pe k re din

in trume ts +

–

R

D

G

To me s re the reverse c r ent u der d.c.con ition

Circ it d ia ram

Se Fig re 13

Fig re 13 – Circ it dia ram f or re ers c r e t me s reme t

Circ it d es riptio a d re uireme ts

D = diode b in me s red

R = protective resistor

G = voltage source

Mea ureme t pro edure

The co l n con ition are adju ted to the sp cif ied ambient, case or ref eren e-p int

temp rature

The sp cif ied reverse voltage is a pl ed throu h a protective resistor an the reverse c r ent

is me s red u der sp cif ied con ition

Sp cified c nditio s

a) ambient, case, referen e-p int or virtual ju ction temp rature (T

a, T

c, T

ref, T

vj);

b) reverse voltage (V

R)

Figure 14 – Circ it dia ram f or pe k re ers c r e t me s reme t

Circ it d es riptio a d re uireme ts

= cal brated c r ent sen in resistor

M ea ureme t pro edure

The diode temp rature is set to the sp cif ied value

The reverse voltage acros the rectif ier diode, me s red on the os i os o e, is adju ted by

me n of the alternatin voltage source to the value of the sp cif ied re etitive p ak reverse

voltage The reverse c r ent throu h the rectif ier diode is me s red on the os i os o e

2

Pe k re din in truments may b u ed in te d of the os i os o e to me s re the p ak

reverse c r ent, but they s al b in truments that alow me s rement of the p ak reverse

c r ent at the time the reverse voltage re c es its p ak value

Sp cified c nditio s

The values of the fol owin con ition s ould b stated:

a) reverse voltage; in case of p ak reverse c r ent eq al to re etitive reverse voltage;

b) ambient, case, referen e-p int or virtual ju ction temp rature

6.1.6 Re ov re c arge, re ers re ov ry time, re ers re ov ry e ergy a d

sof tn s f actor (Q

r, t

r, E

r, S

r)

6.1.6.1 Half sinusoidal wa e method

P urp s

To me s re the recovered c arge Q

r, an the reverse recovery time t an sof tnes f actor S

r

of a rectifier diode at low didt u der sp cif ied con ition

Circ it dia ram a d wa eform

Se Fig re 15 an Fig re 16.

Figure 15 – Circ it dia ram f or re ov re c arge me s reme t,

half sin soidal wa e method

Fig re 16 – Cur e t wa eform throug th diode D during

re ov re c arge me s reme t, h lf sinusoidal wa e method

Circ it d es riptio a d re uireme ts

11p

CLp

≅t

M = me s rin in trument (for example an os i os o e)

= electronic switc (e.g a th ristor)

Mea ureme t pro edure

1

– +

p, the rate of c an e of

f orward c r ent –di

F/dt an the voltage V

1

at the C

1terminals s al b in ac ordan e with the

tI

ti

Δ23

dd

rmF

⋅

=i0

0d

rtt

ttiQ

the zero c r ent axis

The sof tnes f actor is the a solute value of the ratio of the rate of rise of the reverse recovery

c r ent when p s in throu h zero to the maximum rate of f al of the recovery c r ent

mar

0r

r

)/d(d

)/d(d

ti

ti

S

i=

=

Sp cified c nditio s

a) ambient or case temp rature;

2, R

2

NOT De e din o p ls d ratio t

p

a d p a forward c re t is th rate of c a g di

F/dt lmite to a few A/µs

Th reforethis meth d is n t s ita le for fa t-switc in re tif i r dio e

6.1.6.2 Re ta gular wa e method

P urp s

To me s re the recovered c arge Q

r, the reverse recovery time t

r,, reverse recovery energ

Figure 17 – Circ it dia ram f or re ov re c arge me s reme t,

re ta gular wa e method

Figure 18 – Cur e t wa eform through the diode D re ov re

c arge me s reme t, re ta gular wa e method

Circ it des riptio a d re uireme ts

C = ca acitor o eratin as energ reservoir f or the c r ent double pulse an s ould b

large enou h to ke p the voltage con tant d rin the test

G = voltage source

L = in u tor large enou h to ke p the c r ent almost con tant d rin the f re whe ln

time

OSC = os i os o e to me s re c r ent an voltage at the device u der test

R = resistor l mitin the s p ly c r ent

T = electronic switc (f or example IGBT) with adju ta le turn-on sp ed

Mea ureme t pro edure

The temp rature of the device is set to the sp cif ied value

The voltage source G is adju ted to the sp cif ied value of everse voltage

t

p

–di

F / dt

Switc T is turned on f or a d ration that the sp cif ied forward c r ent value (I

F) is f lowin in

the in u tor L

Switc T is turned of f an the c r ent of the in u tor commutates to the diode b in me s red

whic o erates as a fre whe ln diode The pulse d ration t

p(eq al to turn-of f time of the T)

s ould b lon enou h to g arante f ul con u tion of the diode b in me s red but s ort

enou h that negl gible internal he tin of the diode oc urs The d ration s ould b at le st

2 µs (f ast switc in rectif ier diode) up to 1 ms (l ne rectif ier diodes)

At the en of the pulse d ration Switc T is turned on a secon time an the diode b in

me s red turn of f The rate of c an e of forward c r ent is adju ted to the sp cif ied value by

the gate resistor of T The rate of c an e of f orward c r ent is me s red at zero cros in

tI

ti

Δdd

rmF

=

−

The recovered c arge is me s red as:

∫+

⋅

=i0

0d

rtt

ttiQ

the zero c r ent axis

The reverse recovery energ E

r

is the res lt of the integration of the prod ct f rom device

voltage an c r ent d rin the integration time t

i

∫+

⋅

⋅

=i0

0

d

rAKr

tt

t

tivE

The sof tnes f actor is the a solute value of the ratio of the rate of rise of the reverse recovery

c r ent when p s in throu h zero to the maximum rate of fal of the recovery c r ent

mar

0r

r

)/d(d

)/d(d

ti

ti

S

i=

=

Sp cified c nditio s

a) ambient or case temp rature;

b) f orward c r ent I

F(b fore trig erin T

2);

c) reverse voltage V

2, C

2, R

2

prefer e meth d for fa t-switc in re tif i r dio e

6.1.7 Forward re ov ry time (

fr) a d pe k f orward re ov ry volta e (V

frm)

Figure 21 – Volta e wa eform f orward re ov ry time me s reme t

Circ it d es riptio a d re uireme ts

G = c r ent-pulse generator havin a compl an e voltage (o en-circ it output

voltage) 5 V minimum or thre times V

fm, whic ever is gre ter

R = non-in u tive cal brated resistor

S = electronic switc , whic is closed ex e t f or a p riod startin ju t b f ore the

= os i os o es or other monitorin in truments

The pulse d ration s al b lon enou h for the f orward voltage to have re c ed the sta le

value V

F

The pulse d ration an the d ty c cle of the c r ent pulse generator s ould b s c that

negl gible internal he tin of the diode oc urs

Mea ureme t pro edure

The temp rature is set to the sp cif ied value

Whi e monitorin the c r ent waveform on M

A, the c r ent-pulse source is adju ted to the

sp cif ied con ition of ise time t an f orward c r ent I

F

The reverse voltage V

R

is adju ted to the sp cif ied value, an switc S is a pro riately set

The p ak f orward recovery voltage V

f rm

an the forward recovery time t are me s red on the

wavef orm of voltage acros the diode on M

B

in ac ordan e with the sp cif ied sp cif i ation

method

Sp cified c nditio s

a) virtual ju ction temp rature (T

vj);

b) contin ou (direct forward c r ent (I

F);

c) rise time of c r ent pulse (

r(b twe n 10 % an 9 % of I

F, u les otherwise stated);

d) sp cif i ation method I voltages def i in b gin in an en of the f orward recovery time,

if dif ferent from 10 % an 1 0 %, resp ctively, of V

6.1.8 Total c pa itiv c arge (Q

C)

P urp s

To me s re the smal -sig al s ort-circ it ju ction ca acitan e, u der sp cif ied con ition

This is u ed f or calc latin the total ca acitive c arge

Circ it dia ram

Se Fig re 2

Figure 2 – Circ it dia ram f or total c pa itiv c arge me s reme t

Circ it des riptio a d re uireme ts

L = in u tor bloc in the hig freq en y me s rement sig al from the d.c source

G = DC voltage source

A ca acitan e brid e is u ed, th s makin it p s ible to a ply a n l method C

1

s ould b

mu h larger than the ju ction ca acitan es C

j The imp dan e of L s ould b s f f iciently hig ,

so that it is p s ible to comp n ate it by the brid e adju tments The d.c resistan e s ould

b low comp red to the output resistan e of the device

Mea ureme t pro edure

With no device in the me s rement soc et, the zero adju tment of the ca acitan e brid e is

made The device to b me s red is then in erted into the me s rement soc et The voltage

source G is adju ted to a sp cif ied reverse voltage The brid e is re alan ed; the diff eren e

of the ca acitan e re din s of this adju tment an that with no device in the me s rement

soc et yield the c r ent value of C

j This me s rement is p rf ormed in smal in rement ste s

f or reverse voltage startin at 0 u ti the sp cif ied voltage V

e d

for this test is re c ed The

res ltin c rve of the ca acitan e as a fun tion of the cathode-anode voltage is integrated

over the cathode-anode voltage The total ca acitive c arge calc lates with:

IEC –

+L

=

e d

0C

)d(V

VVCQ

Sp cified c nditio s

a) maximum of everse voltage u ed in the me s rement;

b) f req en y of me s rement;

c) ju ction or case or he tsin temp rature

6.2 Me s rin methods f or th rmal c ara teristic

The me s rement of thermal resistan e an tran ient thermal imp dan e is b sed on the u e

of a temp rature-sen itive p rameter of the semicon u tor as an in icator of virtual ju ction

temp rature The f orward voltage of a rectif ier diode, at a smal p rcentage of rated c r ent, is

normaly u ed as the temp rature-sen itive p rameter

6.2.2 Th rmal re ista c (R

th(j-r)) a d tra sie t thermal impe a c (Z

th(j-r)(t ))

P urp s

To me s re the thermal resistan e an /or the tran ient thermal imp dan e b twe n the

ju ction an another sp cif ied referen e p int of a rectif ier diode The thermal resistan e is

the en p int of the thermal imp dan e c aracteristic af ter thermal eq i brium has b en

re c ed The referen e p int temp rature mig t b at the case f or R

th(j-c), Z

th(j-c), at the

he tsin for R

th(j-s), Z

th(j-s)

or the ambient temp rature for R

th(j-a), Z

th(j-a)

or at an other

sp cif ied ref eren e p int The same me s rement method is u ed, with the secon

temp rature me s red at the he tsin , ambient or referen e p int in te d of the case as

des rib d b low in example

Circ it d ia ram

Se Fig re 2

Figure 2 – Circ it dia ram f or thermal impe a c me s reme t

Circ it d es riptio a d re uireme ts

Re

2

= d.c source to provide referen e c r ent

W = watmeter to in icate the p wer dis ip tion P in the ju ction cau ed by the lo d

c r ent I

1

Re = recordin eq ipment, for example an os i os o e or data log er to record the time

variation of the forward voltage cau ed by I

M ea ureme t pro edure

The me s rement is made in two ste s:

a) determination of the temp rature co f f icient of the f orward voltage at the low me s rin

immersin it in a he ted c amb r or inert f l id Thermal eq i brium s al b ac ieved

b fore me s rements are taken At temp rature T

1the forward voltage at the me s rin

c r ent I is V

F1 At a hig er temp rature T

2

it is V

F2(se Fig re 2 ) Then the

temp rature co f ficient ε of the cal bration c rve is:

12

F2F1

=

TT

VV

b) me s rement of the resp n e of the diode to a ste c an e in the internal p wer

dis ip tion

The diode b in me s red is clamp d on a he tsin maintained at a fi ed temp rature A

thermocouple is f i ed at a sp cif ied case p int to me s re the case temp rature T

c(t ) or at

another sp cified referen e p int temp rature to me s re T

r

t The he tin c r ent I

1

is

a pl ed generatin the p wer dis ip tion P in the diode b in me s red u ti thermal

eq i brium is esta l s ed The p wer dis ip ted in the diode is recorded

The he tin c r ent I

1

is inter upted by o enin the switc S The switc S has to switc of f

the c r ent mu h faster than the car ier storage time of the diode b in me s red A delay

time is neces ary b fore me s rin the forward voltage acros the diode af ter o enin S d e

to car ier storage ef f ects The neces ary delay time lasts b twe n several 10 µs f or f a

st-switc in rectifier diodes up to 1ms f or l ne rectif ier diodes The forward voltage at the

ref eren e c r ent I an the case temp rature are me s red at the same time The virtual

1

T

2

ju ction temp rature is then calc lated by me n of the cal bration c rve o tained for the

same referen e c r ent

P

TT

R

c

v j

c )-

t h(j

−

=

The f orward voltage an the ref eren e temp rature are recorded as a fun tion of the co l n

time f or the thermal imp dan e me s rement by the recordin eq ipment Re

The c rve of the recorded forward voltage is con erted to the virtual ju ction temp rature T

T

tZ

c

v jc

v j

c )-

t h(j

0(0)

)(

T

vj

(t ), T

c( ) are the temp ratures at the time t

6.3 Verif ic tion te t methods f or ratings (l miting v lue )

6.3.1 Surg (non-repetitiv ) f or ward c r e t (I

SM)

Fig re 2 – Circ it dia ram f or s rge f or ward c r e t me s reme t

Circ it d es riptio a d re uireme ts

A = p ak re din in trument (e.g ammeter or os i os o e)

D

1

= diode u der test

V –

1

A

IEC

= protective resistor whic s ould b as smal as practica le

S = electromec anical or electronic switc with a con u tion an le of a proximately 18 °

d rin the f orward (s rge) half -c cle

T

1

= hig -c r ent low-voltage tran f ormer s p lyin throu h S the f orward (s rge) hal

f-c cle The c r ent wave s a e s ould b es ential y a half -sine wave of a proximately

10 ms (or 8,3 ms) d ration, with a re etition rate of a proximately 5 (or 6 ) pulses

voltage s a e s ould b es ential y a half -sine wave

V = p ak re din in trument (e.g voltmeter or os i os o e)

is an electromec anical or electronic switc with a con u tion an le of

a proximately 18 °, d rin the reverse half -c cle of tran f ormer T

The voltage an c r ent sources are set to zero The diode u der test is in erted into the test

soc et in ac ordan e with its p larity markin The temp rature con ition are set to the

The s rge f orward c r ent is a pl ed as man times as sp cif ied to the diode u der test

Pro f of the a i ty of the rectifier diode to with tan the s rge forward c r ent ratin is

o tained f rom the p st-test me s rements

Sp cified c nditio s

The values of the fol owin con ition s ould b stated:

a) p ak reverse voltage;

b) s rge (non- e etitive) forward c r ent;

c) maximum imp dan e of the reverse voltage source;

d) n mb r of c cles p r s rge, n mb r of s rges an re etition rate;

e) ambient, case or ref eren e-p int temp rature;

f ) p st-test me s rement l mits

6.3.2 Non-repetitiv pe k re ers volta e (V

RSM)

To verif y the non- e etitive p ak reverse voltage ratin of a rectif ier diode.

Circ it d ia ram

Se Fig re 2

Fig re 2 – Circ it dia ram f or pe k re ers volta e me s reme t

Circ it d es riptio a d re uireme ts

= diode to provide negative half -c cles, so that only the reverse c aracteristic of the

diode u der test is me s red

G = alternatin voltage source

S = electromec anical or electronic switc (with a con u tion an le of a proximately 18 °)

whic a pl es the source voltage to the rectif ier diode u der test for one half -c cle in

the reverse direction

V = p ak re din in trument

Te t pro edure

With bias con ition set to zero, the diode u der test is in erted into the test soc et

Switc S is o ened an the a.c source voltage is in re sed to the sp cified value of non

-re etitive p ak reverse voltage

The sp cif ied temp rature con ition are c ec ed

The sp cified non- e etitive p ak reverse voltage is a pl ed by closin switc S f or

a proximately 18 °

Pro f of the a i ty of the diode u der test to with tan the non- e etitive p ak reverse voltage

ratin is o tained from the p st-test me s rements

Sp cified c nditio s

The values of the fol owin con ition s ould b stated:

a) non- e etitive p ak reverse voltage;

b) ambient, case or ref eren e-p int temp rature;

re tif ier diode

P urp s

To verif y the p ak reverse p wer ratin of avalan he an control ed-avalan he rectif ier diodes

u der sp cified con ition

The fol owin thre test method are des rib d:

A – with a trian ular wavef orm pulse

B – with a sin soidal wavef orm pulse

C – with a rectan ular waveform pulse

Circ it dia ram

Se Fig re 2

Figure 2 – Circ it to v rif y pe k re ers power of a ala c e re tif ier diode

Circ it des riptio a d re uireme ts

The reverse c r ent pulse of the trian ular wavef orm ac ordin to Method A s ould b as

1

sin s id l wav form re t an ular w av eform

t ria g lar wav eform