mosfet modeling for vlsi circuit simulation

... Current Model for Enhancement Devices 263 Most of the expressions reported in the literature for I d , in weak inversion region are variations of Eq (6.96) [4], [29]-[32] For circuit simulation ... resulted in I, = 0 for Vgs < Vth, that is, there is no current flow for V,, below threshold In reality this is not true and I,, has small but finite values for V,, < V r h For the device ... takes the following form, after eliminating 4J using Eq (2.15) and making use of Eq (6.50) for B, d s - 2 L J Z (6.96b) This is the current equation for the subthreshold region For each Vgs we

Ngày tải lên: 13/08/2014, 05:22

... extended for short channel devices [17]-[19] However, they are not generally used for VLSI simulations for reasons discussed in section 6.3, though they are being used for circuit simulations, ... more complicated equation for the current Therefore, for circuit models, various simplified approaches have been suggested In one approach, the following approximate formula is used to ensure ... the device output conductance is of more concern for analog circuit design than for digital design For analog design, a more accurate expression for the channel field is thus desirable An accurate

Ngày tải lên: 13/08/2014, 05:22

... Gear integration formula Note The subscript j stands for G, S, D or B for the charge Q and capacitance C, as we are now dealing with the total charge or total capacitance However, for current and ... dashed lines assume Eq (6.71) for 6, while continuous lines assume comparatively small capacitances, therefore, it is not the cause of any significant error in circuit simulation when all capacitances ... possible for a charging current to flow through the channel via the drain We will now derive the charge expressions first for the long channel devices, and then modify those charge expressions for

Ngày tải lên: 13/08/2014, 05:22

... Yu, ‘Substrate current modeling for circuit simulation , IEEE Trans Computer-Aided Design, CAD-1, pp 18 3-1 86 (1982) [141 Y W Sing and B Sudlow, Modeling and VLSI design constraints ... give a closed form expression for the gate current as (8.29) To a first order above equation can be written as [6] I, z c21dexp( - $) (8.29a) where C, is about 2 x for VgS > ... around Vgs z Vds/2. For a given V,,, the gate current I, increases with increas- ing V,, due to increasing €,,, until V,, = Vd,. For Vgs > Vd,, MOSFET is driven into

Ngày tải lên: 13/08/2014, 05:22

... Although Eqs (9.18) and (9.19) are derived for uniform substrate doping, they remain valid for the case of nonuniform doping These are the basic equations for measuring doping profiles using the ... parameter that has direct bearing on the device performance Non-uniform doping occurs due to ion implantation of impurities into the silicon during MOSFET fabrication It may also occur during oxidation ... doping concentration will be designated by N only, without subscript Uniform Doping Concentration For an MOS capacitor with uniformly doped substrate, the doping concentration can easily be computed

Ngày tải lên: 13/08/2014, 05:22

... are used for modeling MOSFET devices (cf section 3.7) This in turn requires AL and A W to be known In this section we will discuss various methods of determining AL and A W of a MOSFET Trang ... are repeated for different values of Vgs thus giving V,,,, as a function of V,, Figure 9.40 shows a plot of the function G versus Vd, for various values of V,,, for an n-channel MOSFET with ... parameter for nMOST with t o , = 150 8, (W, = 12.5 pm) Slope of these lines yields p; ' for each length L, (b) The plot of b; ' versus L, gives A L where L,, and L,, are drawn channel lengths for

Ngày tải lên: 13/08/2014, 05:22

... effort for calculating the Hessian H in order to solve for Ap In general, the Hessian matrix H is difficult to solve with sufficient accuracy For this reason approximations are often used for ... needed for acquiring the different types of data required for MOSFET model parameter measurements and/or extraction We had also discussed linear regression methods to determine basic MOSFET parameters ... the literature for device model parameter extraction, differ mainly in the optimization algorithms used We will first discuss methods used for model parameter extraction for any MOSFET model This

Ngày tải lên: 13/08/2014, 05:22

... modeling for efficient parametric yield estimation of MOS VLSI circuits’, IEEE Trans Electron Trang 3References 579 [6] T K Yu, S M Kang, I N Hajj, and T N Trick, ‘Statistical performance modeling ... 1984 [18] N D Arora and L M Richardson, ‘MOSFET modeling for circuit simulation’ in Advanced M O S Device Physics (N G Einspruch and G Gildenblat, eds.), VLSI Electronics: Microstructure Science, ... IEEE J Solid-state Circuits, 24, pp 1433-1439 (1989) [lo] C Michael and M Ismail, ‘Statistical modeling of device mismatch for analog MOS integrated circuits’, IEEE J Solid-state Circuits, 27, pp

Ngày tải lên: 13/08/2014, 05:22

... 1PATIENT SPECIFIC FINITE VOLUME MODELING FOR INTRAOSSEOUS PMMA CEMENT FLOW SIMULATION IN VERTEBRAL CANCELLOUS BONE JEREMY TEO CHOON MENG A THESIS SUBMITTED FOR THE DEGREE OF DOCTORATE OF PHILOSOPHY ... used as inputs for the computational simulation Their parameters could be altered subsequently, when more accurate models are developed Percutaneous vertebroplasty simulation was performed on 4 ... both before and after bone cement injection, using computed tomography Image datasets before percutaneous vertebroplasty were used to generate finite volume models and simulations were performed

Ngày tải lên: 13/09/2015, 21:18

... Uniformity L M H HBT is the best for analog LSI circuits Hysteresis H M L HBT is the best for sample and hold circuits Large-signal Collector Efficiency M H H HBT is potentially the best for ... essential for the accurate MMIC design, but also is the stepping stone for accurate HBT large-signal modeling This chapter will discuss the issue of HBT small-signal modeling The HBT small-signal modeling ... denotes simulation with the VBIC model) (a) simulation with parameters directly converted from the GP model, (b) simulation after VEF correction by local ration evaluation technique, (c) simulation

Ngày tải lên: 17/09/2015, 17:20

... GEOMETRIC MODELING FOR CO-MODELING AND CO-SIMULATION IN COLLABORATIVE PRODUCT DEVELOPMENT RUAN LIWEI NATIONAL UNIVERSITY OF SINGAPORE 2004 GEOMETRIC MODELING FOR CO-MODELING AND CO-SIMULATION ... the file format of “*.inp”. Figure 3-12 Input File Format for FEA Analysis One of the features of INP file format is that it is a time-dependent (multi-step) file format. Relevant simulation ... depository for geometric models (in SAT or HSF format) and simulation results. Figure 3-14 shows 70 the implementation structure of data streaming for collaborative modeling and simulation. Figure

Ngày tải lên: 07/10/2015, 10:02

... process/device simulation 47-48 3.3 Pre-inverse modeling calibration 49-50 -3- 3.4 Conclusion for chapter three 51 Chapter four – Inverse modeling results for combined process and device simulation ... Inverse modeling for the study of 2D doping profile of submicron transistor using process and device simulation Chan Yin Hong National University of Singapore 2005 Inverse modeling for the study ... device simulation 37-41 2.3 Selection of optimizing parameters 41-43 2.4 Selection of matching electrical data 43 2.5 Conclusion for chapter two 43-44 Chapter three – Computational techniques for simulation

Ngày tải lên: 08/11/2015, 16:45

... channel modeling, thesame Fourier transform definitions are used to move back and forth between time and fre-quency for both signals and channels However, frequency is chosen as the base domain forchannels, ... mathematicaldefinitions for their Fourier transformations To perform a transformation into a spectraldomain, insert the channel function into the brackets of the expression in the column ofTable 2.2 marked Transform ... written in thefollowing form throughout this work:˜H(transformed dependencies; untransformed dependencies)where the transformed dependencies are either τ , k, or ω and the untransformed cies are either

Ngày tải lên: 20/11/2012, 11:36

... me to get deep intothe 3D modeling industry Particular thanks got to Roman Ormandy for develop-ing such a lovely product, to Bibiana Gasparik, and to Norm Fortier, for tech-sup-porting me to ... your skill set Nowhere but in 2D Artwork and 3D Modeling for Game Artists will you find such a complete treatise on 2D artwork and 3D modeling for games or interactive media Sincerely, André ... required to perform your game art creations This book primarilyteaches the use of trueSpace, an excellent 3D modeling program with a pow-erful NURBS (non-uniform rational b-spline) interface for creating

Ngày tải lên: 14/12/2013, 20:15

... chapter you will ■ Set up the trueSpace 6 environment in preparation for game modeling ■ Logically plan out the modeling attributes for the RF-9 plasma gun ■ Build the RF-9 step-by-step using primitives ... course, accelerating the modeling process may require you to clean up any unnecessary polygons at the end. See Chapter 4 for details on advanced modeling with NURBS (non-uniform rational b-spline) ... items you should consider before you begin. If you’re already familiar with trueSpace and want to jump right into the modeling, go ahead and skip to the section titled “Modeling the RF-9.” Trang

Ngày tải lên: 14/12/2013, 20:15

... Split-Merge on www.verypdf.com to remove this watermark Modeling the Slogre Figure 4.13 Drag a single point at top to form the hump Figure 4.14 Start forming the head by dragging the top end point of ... 82 Modeling the Slogre Character with trueSpace Figure 4.28 Move the points at the top into a circular shape for the leg, and continue extruding 10 Continue extruding the rest of the leg, forming ... Preparing the Model for Texturing Before you dive into unwrapping and texturing the RF-9, you need to import the STL version of the weapon you created in Chapter 3, check it for problems, optimize

Ngày tải lên: 14/12/2013, 20:15

... individual rh3 files in the Chapter 5 Data section on the CD-ROM. Make sure you save it to this format so all information is retained! NOTEEven though it’s most efficient to have both 3D Studio Max and ... Repeat step 13 for the other half (see Figure 5.36) 15 Next, join the two halves to create a single, 2D map representing the hoop To begin, with the top half selected, choose Edit, Transform, Flip ... re-join each other, just as they were joined beforeyou cut the one half away from the other Figure 5.38 shows the halves joinedFigure 5.36 Choose Relax for each half so the points spread themselves

Ngày tải lên: 14/12/2013, 20:15

... great base texturefor them using only a handful of Photoshop’s filters Textures for humans, insects, or anything else with complex detail, however, can be a real challenge for someonelike me ... artwork for the stone walls, floors, and ceilings;and wood textures for the doors, stretching racks, torches, and the like Here’s a quick guideline/overview of what you should think about before ... and 2 for the other tusk, and stack them. Trang 4Unwrap the Slogre’s U-V’s Figure 6.37 Select the remaining points on the Material map and apply a Planar 2 mapping. Figure 6.38 Select the forward

Ngày tải lên: 14/12/2013, 20:15

... you can use for almost any type ofrock on any planet — just try changing the foreground and background colors fordifferent results 1 Start a new 512× 512-pixel RGB image 2 Select any foreground ... The first one shows simple holes, called form ties, commonly seen in large buildings These holes are the byproduct of the cement formers holding the form Figure 8.42 The finalized texture tiled ... materials when building your textures For example, when making formed cement walls, engineers don’t just take a batch of plain, smooth cement and pour it into a form to make the wall block If they

Ngày tải lên: 14/12/2013, 20:15

... combinations This is the basis for color television and color video display terminals (VDT) technology in general In order to produce millions of colors one needs only three primaries For example, the sensation ... “bluish-yellow” (compare again to the list above) Approximately 8% of the male population (less for non-Caucasians than for Caucasians), and slightly less than 1% of the female population suffer from some ... simple rule-of-thumb for creating displays that are usable by color deficient viewers is to always code important distinctions in the image with a redundant luminance cue For example, a World-Wide

Ngày tải lên: 22/12/2013, 21:17