low power digital vlsi design circuits and systems pdf

... Trang 2Thermal-Aware Testing of Digital VLSI Circuits and Systems Trang 4Thermal-Aware Testing of Digital VLSI Circuits and Systems Santanu Chattopadhyay  Trang 5Boca Raton, ... Trang 25Yield may be low because of two reasons: random defects and process variations Random defects get reduced with improvements in computer aided design (CAD) tools and the VLSI fabrication ... Test power often turns out to be much higher than the functional-mode power consumption of digital circuits The following are the probable sources of high-power consumption during testing: 1 Low-power

Ngày tải lên: 05/03/2019, 08:36

... Bashirullah, R., and Mortazawi, A (2003) A Ka-Band Power Amplifier Based on a Low-Profile Slotted-Waveguide Power-Combining/Dividing Circuit, IEEE Transactions on Microwave Theory and Techniques, ... Srivastava, G.P, and Gupta, V.L (2006) Microwave devices and circuit design Prentice-Hall of India, New Delhi, ISBN 81-203-2195-2 Szczepaniak, Z (2007) Broadband Waveguide Power Splitter for X-band Solid-state ... 12 Example of high power X-band amplifier using four-input rectangular waveguide power splitter and combiner 4.4 Eight-input microwave circular waveguide combiner The following splitter structure

Ngày tải lên: 20/06/2014, 11:20

... about 9.3 km, the transmitted power is 16 dBm, and the recording margin is about 34 dB Two microwave systems working at 58 GHz and 93 GHz are used on the parallel paths B and C with the same path ... monthly and annual statistics of both rain intensities and rain attenuation and the assessed availability performances of experimental links are presented in this section 6.1 Monthly and annual ... Set-up The used 38 GHz, 58 GHz, and 93 GHz radio systems, the meteorological measurements and the data processing are described in this section 5.1 Terrestrial wireless systems used Attenuation events

Ngày tải lên: 21/06/2014, 06:20

... series of design examples Designs undertaken include a switching mode power amplifier, Doherty power amplifier, and flexible power amplifier architectures In addition, distortion analysis and power ... Paolo Colantonio, Franco Giannini, Rocco Giofrè and Luca Piazzon 7 Distortion in RF Power Amplifiers and Adaptive Digital Base-Band Predistortion 133Mazen Abi Hussein, YideWang and Bruno Feuvrie 8 Spatial power combining techniques for semiconductor power amplifiers ... frequency band, which makes these amplifiers prone low-to self-oscillations and therefore limit their applicability The trade-off between noise figure, gain, linearity, bandwidth, and power consumption,

Ngày tải lên: 21/06/2014, 06:20

... B., Circuits, Interconnections, and Packaging for VLSI, Addison Wesley, 1990. Bauer, R F and Penfield, Jr, P (1974) De-embedding and unterminating, IEEE Transactions on Microwave Theory and Techniques, ... B., Circuits, Interconnections, and Packaging for VLSI, Addison Wesley, 1990. Bauer, R F and Penfield, Jr, P (1974) De-embedding and unterminating, IEEE Transactions on Microwave Theory and Techniques, ... Thiede, A., and Maurer, L (2009) Extension of thru de-embedding technique for asymmetrical and differential devices, IET Circuits, Devices & Systems, vol 3, no 2, pp 91–98 Ito, H and Masu,

Ngày tải lên: 21/06/2014, 06:20

... performance of a DPA designed to fulfill 7dB of OBO and 6W as maximum output power, are shown in Fig 12 Moreover, the same physical parameters have been assumed for both Main and and Auxiliary devices: ... performance of a DPA designed to fulfill 7dB of OBO and 6W as maximum output power, are shown in Fig 12 Moreover, the same physical parameters have been assumed for both Main and and Auxiliary devices: ... at the end of the low power region (x=xbreak) and at the end of the Medium (or Doherty) power region, i.e at saturation (x=1), as a function of the Main device bias point () and the selected

Ngày tải lên: 21/06/2014, 06:20

... input and/or output signals without changing the internal design of Trang 7modelEquivalent BB f c+3 f m f c+7 f m f2f1 Fig 8 Equivalent baseband modeling of the PA 3.3 Band-pass signals and baseband ... bandwidth constraints, narrow-band narrow-band-pass signals are generated in most applications Signals are termed narrownarrow-band band-pass signals or, shortly, band-pass signals, when they satisfy ... coefficients and to improve the leastsquare method accuracy Trang 6modelEquivalent BB f c+3 f m f c+7 f m f2f1 Fig 8 Equivalent baseband modeling of the PA 3.3 Band-pass signals and baseband equivalent

Ngày tải lên: 21/06/2014, 06:20

... have low dielctric losses and low permitivity to reduce the RF power dissipation in the substrates and to increase the self-resonant-frequency Glass, fused quartz, high-resistivity silicon and ... have low dielctric losses and low permitivity to reduce the RF power dissipation in the substrates and to increase the self-resonant-frequency Glass, fused quartz, high-resistivity silicon and ... applications Glass and fused quartz have both a low dielectric constant and low dielectric tangent which makes them preferrable for achieving a high self-resonant frequency and reducing the eddy

Ngày tải lên: 21/06/2014, 06:20

... 2005) The oscillator is designed in standard CMOS technology and implemented with the design-kit released by AMS© (0.35 μm HBT BiCMOS S35 technology, website: www.austriamicrosystems.com) Whereas, ... 2005) The oscillator is designed in standard CMOS technology and implemented with the design-kit released by AMS© (0.35 μm HBT BiCMOS S35 technology, website: www.austriamicrosystems.com) Whereas, ... the RF-MEMS design optimization, are straightforward First of all, in the early design stage, the designer has to deal with a large number of DOFs influencing the electromechanical and electromagnetic

Ngày tải lên: 21/06/2014, 06:20

... (Halverson & Bigelow, 2001) Trang 9temperatures and using less power in the lower bands rather than microwave band The complex dielectric constant of one kind of rice weevils and a kind of wheat ... controlled in lower Trang 8temperatures and using less power in the lower bands rather than microwave band The complex dielectric constant of one kind of rice weevils and a kind of wheat in a wide range ... products with the lower frequency bands, namely 11-90 MHz, is much better and more efficient than those of the microwave bands such as 2450 MHz, meaning that pest can be controlled in lower Trang 7Thus,

Ngày tải lên: 21/06/2014, 06:20

... Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems ... María-ÁngelesGonzález-GarridoandJesúsGrajal 17. DesignofMulti-PassbandBandpassFiltersWithLow-Temperature Co-FiredCeramicTechnology 343 Ching-WenTangandHuan-ChangHsu 18. TheSwitchedModePowerAmpliers ... GeorgePapaioannouandRobertPlana 15. RF-MEMSbasedTunerformicrowaveandmillimeterwaveapplications 303 DavidDubucandKatiaGrenier 16. BroadbandGaNMMICPowerAmpliersdesign 325 María-ÁngelesGonzález-GarridoandJesúsGrajal

Ngày tải lên: 21/06/2014, 10:20

... will allow for optimum design in term of lowering the power consumption The obtained thermal switching device allows for discrete, localized activation of micrometer-sized VO2 patterns and may ... will allow for optimum design in term of lowering the power consumption The obtained thermal switching device allows for discrete, localized activation of micrometer-sized VO2 patterns and may ... present the design, fabrication and caracterization of thermally activated MW switches and their integration in a new type of thermally triggered reconfigurable 4-bit band stop filter designed to

Ngày tải lên: 21/06/2014, 10:20

... to easy understand the DPA behavior, the following operating regions can be recognized (Raab, 1987) 112 Advanced Microwave Circuits and Systems For low input power level (i.e Low Power Region, ... sample&hold, IEE Proceedings -Circuits, Device and Systems, Vol.143, No.6 Dec 1996 pp.337-342 106 Advanced Microwave Circuits and Systems The Doherty Power Amplifier 107 x The Doherty Power Amplifier Paolo ... Yates, S & Matreci, R (2000) A 20 GHz Doherty power amplifier MMIC with high efficiency and low distortion designed for broad band digital communication systems, IEEE MTT-S International Microwave...

Ngày tải lên: 20/06/2014, 11:20

... Aberg, D.;" A low power wide band CMOS VCO for multistandard radios" Radio and Wireless Conference, 2004 IEEE 19-22 Sept 2004 Page(s):79 - 82 212 Advanced Microwave Circuits and Systems [5] Berny, ... on the other hand it is good to dissipate less power as this makes design of the system power budget more relaxed, but on the other hand it should be noted that a high output power and robust circuit ... and quality factor (Q) Implementation of Low Phase Noise Wide-Band VCO with Digital Switching Capacitors 207 2.3.4 Switching capacitor modules We usually use band switching techniques to expand...

Ngày tải lên: 20/06/2014, 11:20

... GHz) Power (mW ) ( NF (real ) − 1) , (3) where Gain stands for insertion gain S21 , BW for amplifier 3-dB bandwidth (in GHz), Power stands for DC power dissipated by the circuit (in milliwatts), and ... Advanced Microwave Circuits and Systems ・ Lower total cost due to reduced costs for procurement, logistics and installation Passive integration technologies can be used in both digital and analog/RF ... RF power amplifier couplers ・ Filters (low pass, high pass and band pass) ・ Functional interposers between ICs and the primary interconnect substrate ・ Multi-band transceivers 1.3 General Design...

Ngày tải lên: 20/06/2014, 11:20

... hybrids (Q) and one power divider (D) 348 Advanced Microwave Circuits and Systems The device is constructed using a seven-port network and includes five 3-dB couplers (Q) and one power divider ... whilst isolation between ports and 4, and and is greater than 19 dB in the 3.1 to 10.6 GHz frequency band In the same band, the coupling between ports and and and is dB with a ±1 dB deviation ... at Port and the simulated and measured transmission coefficients between port and Port and Similarly, Fig 11 presents the simulated and measured return loss at Port and the simulated and measured...

Ngày tải lên: 20/06/2014, 11:20

... required analog circuits including the front-end, the sensor and a low power ADC References Bechen, B (2008) “Systematischer Entwurf analoger Low- Power Schaltugnen in CMOS anhand einer kapazitiven ... Microwave Circuits and Systems complex reflection coefficient as defined in (6) due to open, short and load conditions for  and  The incident and backscatter waves are in negative and positive ... and a higher 418 Advanced Microwave Circuits and Systems Fig 10 Equivalent Circuit of a Transponder maximum possible distance between reader and transponder It can be calculated with the following...

Ngày tải lên: 20/06/2014, 11:20

... Advanced Microwave Circuits and Systems temperatures and using less power in the lower bands rather than microwave band The complex dielectric constant of one kind of rice weevils and a kind of wheat ... property mentioned earlier 454 Advanced Microwave Circuits and Systems References Andersen J.B and Vaughan R.G (2003) Transmitting, receiving and Scattering Properties of Antennas, IEEE Antennas ... C.A (1982) Antenna Theory Analysis and Design, Harper and Row Bancroft R (2004) Microstrip and Printed Antenna Design, Noble Publishing Corporation Brunfeldt D.R and Mukherjee S (1991) A Novel Technique...

Ngày tải lên: 20/06/2014, 11:20

... IMPATT devices are used in microwave and MM-wave digital and analog communication systems, high power RADARs, missile seekers, and in many other defence systems In recent years, the development ... doping profile and field profile Fig (b): The schematic diode structure, doping profile and typical field profile of (i) HighLow DDR and (ii) Low- High -Low DDR IMPATT diodes Wide Band Gap Semiconductor ... device design and materials research Moreover, computer studies are essential for understanding the 120 Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems...

Ngày tải lên: 21/06/2014, 06:20

... in-band and out-ofband performance For example, for the GSM 900 standard, these bands are defined by the following frequency ranges for the mobile station: In-band: 915 MHz -980 MHz and Out-ofband: ... rejection and ripple in the band Fig 10 Ladder and lattice topologies and filter’s response 164 Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems ... whole ISM band from 2.4 to 2.48 GHz, with 3dB insertion loss and 40 dB out-of-band and image 172 Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems...

Ngày tải lên: 21/06/2014, 06:20