analytical techniques in solid state characterization

... each programming point of a gate array Using this technique, a configuration context can be retained indefinitely in the ORGA-VLSI so that the state of the gate array can be maintained statically ... a single instruction set computer (SISC) can be implemented onto them A single instruction set computer is one in which a processor has only a single instruction During production, various single ... using the memory function for storage during an indefinite period can be considered as over-capacity for implementation in single instruction set computers because a processor of a single instruction

Ngày tải lên: 21/06/2014, 06:20

... is depressed in the cladding region by increasing the Gaussian parameter (except σ=0) On the other hand the field distribution slope increases inside the cladding region by increasing of the Gaussian ... respectively In the defined fitness function in Eq (6), internal summation is proposed to include optimum broadening factor for each length up to 200 km By applying the fitness function and running the ... noticeably by increasing the effective area This is the origin of raising the quality factor in these structures This is a key point why the average amount of the quality factor in the proposed

Ngày tải lên: 21/06/2014, 06:20

... cooling system is eliminated in compact and easily maintainable laser system Therefore,... linearly polarized laser operation due to the combination of linearly 16 Advances in Solid-State ... Grishin p. cm. ISBN 978-953-7619-80-0 Preface Invention of the solid-state laser has initiated the beginning of the laser era. Performance of solid-state ... Advances in Solid-State Lasers: Development and Applications Advances in Solid-State Lasers: Development and Applications Edited by Mikhail Grishin Intech IV

Ngày tải lên: 27/06/2014, 01:21

... Zirconia in Solid-State Sintering 1.3.1 Understanding in Solid-State Sintering 1.3.2 Grain Growth via Curvature Migration 10 1.4 Grain Coalescence 11 1.4.1 Grain Coalescence in ... GRAIN COALESCENCE AND MODELING OF NANOSIZED ZIRCONIA IN SOLID-STATE SINTERING YU POH CHING NATIONAL UNIVERSITY OF SINGAPORE 2009 GRAIN COALESCENCE AND MODELING OF NANOSIZED ZIRCONIA IN SOLID-STATE ... ipoin=1,npoin read (170, 2101) i, phi(i) end * ipoin=1,npoin if ipoin=i theta(ipoin)=theta(i) write(151,1001) ipoin, x(ipoin),y(ipoin),z(ipoin),theta(ipoin), phi(ipoin),numA(ipoin),numB(ipoin)

Ngày tải lên: 14/09/2015, 08:24

... the main individual phenolics in the extracts of solid‑state fermented apricot press residues Trang 8on the fungus in certain phases of its growth Many studies have shown that increasing degree ... contents in apricot strongly depend on varieties The quantities of the main phenolics in the extracts of apricot pomaces were determined during solid-state fer-mentations (Table 1), using HPLC–DAD-MS ... is the first study investigating the variation of the amounts of phenolic compounds in apricot pomaces from the beverage industry in correlation to fermentation days in solid-state system with

Ngày tải lên: 29/05/2020, 12:32

... cross-linking reaction in phe- nolic resins is carried out on prepolymers that have been formed by having one of the components in excess in order to minimize cross-linking during the initial reaction ... learning texts has now been introduced with the aim of providing a broader coverage of the many areas of science in which analytical techniques and methods are now increasingly applied With this in ... expanding use as floor and kitchen surface materials Formaldehyde can be reacted with various amine-containing groups to form thermosetting amino resins Urea-formaldehyde resins (U-F resins) are

Ngày tải lên: 31/12/2020, 23:43

... fluctuation of the intensity for atomic initial states IiN, f N - v ) evaluated for the times z , of maximum intensity For v > 10 the curve approaches / v for v increasing Finally, in Fig we gjve ... one obtains some finite, constant value for the relaxation time z of the amplitude, which is plotted schematically in Fig 3b No instability, whatsoever, is possible in this linear domain, in agreement ... with the general result With increased pumping, the nonlinearity of the interaction of light and matter has to be taken into account by linearizing around the stationary state, rather than around

Ngày tải lên: 17/03/2014, 14:58

... Determination of Pyrrolizidine Alkaloids in Traditional Chinese Medicine with Modern Analytical Techniques 41 Chapter 2 Determination of Senkirkine and Senecionine in Tussilago Farfara using ... paeoniflorin and paeonol in jiawei xiaoyao pills [180], bufadienolides in toad venom and their Chinese medicinal preparations [181] as well as synephrine, hesperidin, naringenin and naringin in Fructus ... Yinchen Keli [185], rhein, baicalin and berberine in TCM preparations, Sanhuangpian, Niuhuangjiedu-pian and Huanglianshangqing-pian [186], quercetin, luteolin, kaempferol and isoquercitrin in

Ngày tải lên: 12/09/2015, 11:24

... fast becoming industrial method of choice [17] Inertia friction welding (IFW), a nominal solid state welding process that has existed for some time has now been employed in joining aero engine components ... the increasing demands of advancing gas turbine engine technology [1] In addition to aircraft applications, superalloys are now used in space vehicles, rocket engines, nuclear reactors, submarines, ... stronger affinity for Trang 2partitioning into second phase particles than for remaining in solid solution on grain boundaries [7].Borides are hard refractory particles observed only at grain boundaries

Ngày tải lên: 13/01/2020, 04:51

... 1Springer ThesesRecognizing Outstanding Ph.D Research Towards Solid-State Quantum Repeaters Trang 2Springer ThesesRecognizing Outstanding Ph.D Research For further volumes: http://www.springer.com/series/8790 ... downconversion: timing resolution 148 Trang 19Chapter 1Introduction: Solid-State Quantum Repeaters Quantum Information Processing [1] (QIP), roughly defined as that branch ofphysics, engineering and ... simplest entangled states involve two qubits; famous examples include theEPR-Bell states [22] Let us consider one such state, the|Ψ− -state, also known as the singlet state in quantum chemistry

Ngày tải lên: 01/06/2022, 08:38

... dB In summary, frequency is adjusted in a coarse discrete way by connecting identical transconductors in parallel and with fine continuous tuning by varying the biasing current 174 Advances in ... shrinking, where only planar dimensions are scaled The comparison of melting current reduction in the cases of isotropic scaling and shrinking is shown in Fig In order to compare PCM cells having ... programmable integrator obtaining frequency scaling as expected All the specifications in both transconductor implementations are summarized in table The main advantage of the topology proposed was the inherent...

Ngày tải lên: 21/06/2014, 06:20

... with initializations In this process, the controller initializes the settings 230 Advances in Solid State Circuits Technologies according to the user specifications, which include sampling time ... discussed in detail in this chapter Its working principle is similar to the dynamic tuning/detuning control technique However, instead of using the traditional PI controller to perform the tracking ... variations in the system for calculating the range of LS2 in worst-case scenario Design of Directional Tuning Control (DTC) algorithm In both the shorting-control and dynamic tuning/detuning control...

Ngày tải lên: 21/06/2014, 06:20

... Advances in Solid State Circuits Technologies Conclusions A fuzzy based controller tuning step-size adjuster has been integrated with directional tuning controller to automatically determine the tuning ... in design and eliminates the tedious finetuning process in practical implementation Future research As the fuzzy based directional tuning control algorithm is developed in discrete-time domain, ... Transactions on Industrial Electronics, vol 52, no 5, pp 1308-1314, 2005 238 Advances in Solid State Circuits Technologies L Wang, M Chen, and D Xu, “Increasing inductive power transferring efficiency...

Ngày tải lên: 21/06/2014, 06:20

... switches Since the dissipated power in the switches is insensitive to the transmission line length, reflection should be maximized to minimize the leakage To obtain maximum reflected power and minimum ... transmission line, TL1 as shown in Fig 24 When the digital input is 0V, the NMOSFET switches are turned off Since the parasitic capacitance of each switch in the OFF state is negligible, the input impedance ... modules for 272 Advances in Solid State Circuits Technologies the ON and OFF states, respectively The measured insertion losses of the modulator for the two states are shown in Fig 28(a) When the...

Ngày tải lên: 21/06/2014, 06:20

... cell innodations are divided into three phases Phase I (1K→1M): Shrinkage of planar area of memory cell together with the decrease in capacitor insulator thickness Thinning of the insulator finally ... same increase in processor performance This has been driving enormous development of electronics and information technology 308 Advances in Solid State Circuits Technologies Fig Trends in device ... presentation from Texas Instruments Inc in 1974 introducing a highly efficient silicon solar cell with plural steep trenches, as shown in Fig.4 (a), forecasting the upcoming issue of cell size...

Ngày tải lên: 21/06/2014, 06:20

... the insulating layers are expected Although much progress has been made in fabricating novel gate dielectrics, investigation of these Hf-based high-k gate dielectrics 348 Advances in Solid State ... A few kinds of 3-D stack of active transistors were extensively investigated in 1980’s mainly using laser recrystallization But they were almost abandoned in the next decade due to poor integrity ... these fundamental limits in miniaturization of devices, various kinds of chip stack will be dominant in LSI products in response to the requirement for smaller package used in personal-use, hand-held...

Ngày tải lên: 21/06/2014, 06:20

... than that for the CZ silicon wafers, indicating that germanium doping in silicon inclines hardly to cause warpage during the wafer making from monocrystalline ingots Moreover, the fact of the slightly ... Wang, “InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric,” in Proceedings of IEEE International Conference on Electron Devices and Solid- State Circuits (EDSSC), Hong Kong, China, ... liquid phase oxidized InGaP gate,” in Proceedings of the 7th IEEE International Conference on Solid- State and Integrated Circuits Technology (ICSICT), Beijing, China, Oct 18-21, 2004, pp 2301-2304...

Ngày tải lên: 21/06/2014, 06:20

... are also diminished 402 Advances in Solid State Circuits Technologies a b Fig a) For pre-objective scanning, illumination light is incident on the objective off-axis, resulting in more sensitivity ... co-doping (Ge-B-co-doped) silicon substrates The germanium content in the CZ silicon is calculated aiming to balance the stress induced by boron doping However, in principle, the co-doping of ... optics 398 Advances in Solid State Circuits Technologies E Definition of coordinates The coordinates for the dual axes confocal configuration are shown in Fig The illumination (IO) and collection...

Ngày tải lên: 21/06/2014, 06:20

... luminescence were at 500 and 1120 nm, respectively The luminescent intensity nonlinearly increased with increased Bi2O3 concentration At a 1.0 mol% of Bi2O3 concentration, the luminescent intensity ... and No to Bi5+ Nos and are the intermediate states between numbers and 4, and these states have intermediate coordination states rather than intermediate valence states such as Bi4+ due to the ... 40 Advances in Solid- State Lasers: Development and Applications Next, the aluminum cordination state (ACS) should be close to the Bi ion in BiSG, as seen from the 27Al-NMR results Since the relation...

Ngày tải lên: 21/06/2014, 10:20

... Cavity Ming Lei Department of Electronic Engineering Tsinghua University China Introduction High power or high energy solid- state lasers are required in many applications, but are limited in beam ... pp 863-867 118 Advances in Solid- State Lasers: Development and Applications Koechner, W (1996) Solid- State Laser Engineering Springer Verlag, ISBN 3-540-60237-2, Berlin Kudryashov, I., Katsnelson, ... Advances in Solid- State Lasers: Development and Applications 1908-nm line In the last part of characterisation in a free-running regime, we have measured the beam profiles in far field in the focal...

Ngày tải lên: 21/06/2014, 10:20