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Tiêu đề Section III – Electronics
Tác giả John W. Steadman
Người hướng dẫn Richard C. Dorf, Editor
Trường học University of Wyoming
Chuyên ngành Electrical Engineering
Thể loại Chapter in a handbook
Năm xuất bản 2000
Thành phố Boca Raton
Định dạng
Số trang 5
Dung lượng 323,08 KB

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The electrical engineering handbook

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Steadman, J.W “Section III – Electronics”

The Electrical Engineering Handbook

Ed Richard C Dorf

Boca Raton: CRC Press LLC, 2000

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The Cheetah disc drive is produced by Seagate Technology, Scotts Valley, California, and has been dubbed the industry’s fastest disc drive The Cheetah is the world’s first-announced drive to utilize 10,000-rpm technology The increased rotational remarkably increases data transfer rates to 15 Mbytes/sec which is 40% greater than that

of 7,200-rpm drives The 10,000-rpm rotational rate also significantly reduces the seek time

Seagate’s pioneering of the 10,000-rpm technology enables OEMs, VARs, and system integrators to take advan-tage of performance levels that were previously unattainable Seagate has developed and manufactured some of the industry’s highest-performance disc drives which not only enable users to achieve higher levels of system performance, but will also introduce exciting new electronic applications (Photo courtesy of Seagate Technology.)

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Electronics

22 Semiconductors G.S Gildenblat, B Gelmont, M Milkovic, A Elshabini-Riad, F.W Stephenson, I.A Bhutta, D.C Look

Physical Properties • Diodes • Electrical Equivalent Circuit Models and Device Simulators for Semiconductor Devices • Electrical Characterization of Semiconductors

23 Semiconductor Manufacturing H.G Parks, W Needham, S Rajaram, C Rafferty

Processes • Testing • Electrical Characterization of Interconnections • Process Modeling and Simulation

24 Transistors S Soclof, J Watson, J.R Brews

Junction Effect Transistors • Bipolar Transistors • The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET)

25 Integrated Circuits J.E Brewer, M.R Zargham, S Tragoudas, S Tewksbury

Integrated Circuit Technology • Layout, Placement, and Routing • Application-Specific Integrated Circuits

26 Surface Mount Technology G.R Blackwell

Definition and Considerations • SMT Design, Assembly, and Test Overview • Surface Mount Device (SMD) Definitions • Substrate Design Guidelines • Thermal Design Considerations • Adhesives • Solder Paste and Joint Formation • Parts Inspection and Placement • Reflow Soldering • Cleaning • Prototype Systems

27 Operational Amplifiers E.J Kennedy, J.V Wait

Ideal and Practical Models • Applications

28 Amplifiers G.L Carpenter, J Choma, Jr

Large Signal Analysis • Small Signal Analysis

29 Active Filters R.E Massara, J.W Steadman, B.M Wilamowski, J.A Svoboda

Synthesis of Low-Pass Forms • Realization • Generalized Impedance Converters and Simulated Impedances

30 Power Electronics K Rajashekara, A.K.S Bhat, B.K Bose

Power Semiconductor Devices • Power Conversion • Power Supplies • Converter Control of Machines

31 Optoelectronics J Hecht, L.S Watkins, R.A Becker

Lasers • Sources and Detectors • Circuits

32 D/A and A/D Converters S.A.R Garrod

D/A and A/D Circuits

33 Thermal Management of Electronics A Bar-Cohen

Heat Transfer Fundamentals • Chip Module Thermal Resistance

34 Digital and Analog Electronic Design Automation A Dewey

Design Entry • Synthesis • Verification • Physical Design • Test

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John W Steadman

University of Wyoming

HE TRULY INCREDIBLE CHANGES in the technology associated with electronics over the past three decades have certainly been the driving force for most of the growth in the field of electrical engineering Recall that 30 years ago the transistor was a novel device and that the majority of electronic systems still used vacuum tubes Then look at the section headings in the following chapters and appreciate the range

of ways that electronics has impacted electrical engineering Amplifiers, integrated circuits, filters, power electronics, and optoelectronics are examples of how electronics transformed the practice of electrical engi-neering in such diverse fields as power generation and distribution, communications, signal processing, and computers

The various contributors to this section have done an outstanding job of providing concise and practical coverage of this immense field By necessity, the content ranges from rather theoretical considerations, such as physical principles of semiconductors, to quite practical issues such as printed circuit board technology and circuits for active filter realizations There are areas of overlap with other chapters in the Handbook, such as those covering electrical effects and devices, biomedical electronics, digital devices, and computers The con-tributors to this section, however, have maintained a focus on providing practical and useful information directly related to electronics as needed by a practicing electrical engineer

The author(s) of each chapter was given the task of providing broad coverage of the field while being restricted

to only a few pages of text As a result, the information content is quite high and tends to treat the main principles or most useful topics in each area without giving the details or extensions of the subject This practice, followed throughout the Handbook, is what makes it a valuable new work in electrical engineering In most cases the information here will be complete enough When this is not the case, the references will point the way to whatever added information is necessary

Nomenclature

A i current gain

A v terminal voltage gain

ai ionization coefficient

C velocity of light in 2.998 ´ 108 m/s

vacuum

C c coupling capacitor

C E emitter bypass capacitor

C j junction capacitance F

eo permittivity constant 8.85´10–12 F/m

F radiational factor

potential

h re small-signal current gain

h quantum efficiency

i b incremental base current A

I B direct base current A

I D diode forward current A

I E direct emitter current A

I s reverse saturation A

current

k Boltzmann constant 1.38 ´ 10–2 3 J/K

k wave vector

k attenuation

k thermal conductivity W/m K

l carrier mean free path m

m magnetic permeability H/m

T

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Symbol Quantity Unit

Pr Prandtl number

ybk Bloch wave function

q electronic charge 1.6 ´ 10–19 C

R B base resistor

Re Reynolds number

R g generator internal W

resistance

s Stefan-Boltzmann 5.67 ´ 10–8

time

q volumetric flow rate m3/s

V BE direct base-emitter V

voltage

V CC direct voltage supply V

Z o characteristic impedance W

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