UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO... UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO.
Trang 1UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO LTD 1
QW-R201-004,A
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
BVCEO=-50V
*Collector current up to 150mA
*High hFE linearity
*Complement to 2SC1815
TO-92
1
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
hFE2
VCE=-6V,Ic=-2mA
VCE=-6V,Ic=-150mA
70 25
400
RG=1kΩ,f=100Hz
0.5 6 dB
Trang 2UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO LTD 2
QW-R201-004,A
CLASSIFICATION OF hFE1
RANK Y G
RANGE 120-240 200-400
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
-0 -4 -8 -12 -16 -20
0
-10
-20
-30
-40
-50
Fig.2 DC current Gain
Ic,Collector current (mA)
102
101
100
103
-103 -102 -101 -100 -10-1
Fig.3 Base-Emitter on Voltage
Base-Emitter voltage (V)
0 -0.2 -0.4 -0.6 -0.8 -1.0
Ic,Collector current (mA)
-101
Fig.4 Saturation voltage Fig.5 Current gain-bandwidth
product
Fig.6 Collector output Capacitance
Ic,Collector current (mA)
103
100
101
102
Collector-Base voltage (V)
100
101
102
f=1MHz
-10-1 -100 -101 -102
-103 -102 -101
-100
-10-1 -100 -101 -102 -100 -101 -102 -103
-10-1
-10-2
-100
-10-1
-10-1
10-1