Introduction The key characteristic of a bipolar transistor is that a small amount of power in the base-emitter circuit can control a larger amount of power in the collector-emitter cir
Trang 1CHAPTER 4
The Bipolar Transistor
Trang 2OBJECTIVES
Describe and Analyze:
• Transistor architecture
• Transistor characteristics
• Transistors as switches
• Transistor biasing
• Transistor amplifiers
• Troubleshooting techniques
Trang 3Introduction
The key characteristic of a bipolar transistor is that a small amount of power in the base-emitter circuit
can control a larger amount of power in the
collector-emitter circuit
Trang 4Inside the Transistor
A small voltage applied base to emitter causes charge carriers to flood into the base Almost all of those carriers are then swept into the collector Some of them come out the base due to
electron-hole recombination at defects in the crystal structure
Trang 5Alpha ( ) and Beta ( )
Alpha is a key parameter of BJTs: = IC / IE
Beta is a secondary parameter: = IC / IB
With a little algebra you can get the relationship:
= / (1 - ) Using the values = 0.99 and = 0.98, you get = 99 and = 49 respectively
So you can see that small changes in alpha cause large changes in beta Two transistors with the
same part numbers can have two very different values of beta
Trang 6Calculations with Beta
Suppose you measure the currents in a transistor and find that IB = 0.2 mA and IC = 10 mA Calculate the value of IC for a base current of 1mA
Find beta from data:
= IC / IB = 10 / 0.2 = 50
Use calculated beta to find new IC:
IC = IB = 50 1mA = 50 mA
Trang 7Transistor Switches
Compared to mechanical switches, transistors used as
switches:
• Last much longer
• Can turn on and off much faster
Trang 8Calculations for a Transistor Switch
Suppose you want to use a transistor ( = 50) to turn
on an LED The LED requires 40 mA for full
brightness You will use a 12 Volt DC power supply What value should you use for a base resistor?
Base current needed: IB = IC / = 40mA / 50 = 0.8 mA For reliability, over-drive the base by a factor of 2:
Actual IB = 2 calculated IB = 2 0.8mA = 1.6 mA
Calculate base resistor: RB = 12V / 1.6mA = 7.5 k
Trang 9Power Gain of a Transistor Switch
Suppose a transistor ( = 100) is being used to turn
a 100 Watt load on and off The load uses 50 Volts
DC What is the power gain?
Find IC using I = P / V: IC = 100W / 50V = 2A
Find IB using beta: IB = IC / = 2A / 100 = 20 mA
Find base-drive power assuming VBE = 0.7 Volts:
P = V I = 0.7V 02A = 14 mW Power gain (AP) = PLOAD / PBASE:
AP = 100W / 014W = 7143
Trang 10Transistor Data: Stress Limits
• Power Dissipation, Maximum: V CE I C + V BE I B
• Collector Current, Maximum: I C(MAX)
• Base Current, Maximum: I B(MAX)
• VCE Maximum: V CEO
• VCB Maximum: V CBO
• VBE Reverse-Biased, Maximum: V EBO
• Junction Temperature, Maximum: T J(MAX)
Trang 11Transistor Data: Signal
• DC Beta: hFE
hFE = IC / IB where currents IC and IB are DC
• AC Beta: h fe
h fe = i C / i B where currents i C and i B are signal currents
• Gain-Bandwidth Product: f T
f T is the frequency at which h fe = 1
Trang 12Gain & Amplification
Voltage Gain: AV = VOUT / VIN
Current Gain: AI = IOUT / IIN
Power Gain: AP = POUT / PIN = AV AI
Amplification requires power gain
Trang 13Classification of Amplifiers
Class A: Can be done with one device
Class B: Requires two devices, one for each half cycle Class C: Requires resonant circuit to restore signal shape to a sine-wave
Trang 14Base-Bias
Simple one-resistor base-biasing is not practical due
to the large variations in beta between devices
Trang 15The Base-Biased Amplifier:
Input Impedance
Zin = rb || r’e where
r’e = 25mV / IE (approximately)
and rb = Rb for single resistor biasing
Trang 16The Base-Biased Amplifier:
Output Impedance
Output Impedance: Zout = Rc
Trang 17The Base-Biased Amplifier:
Voltage Gain
Voltage Gain: Av = rc / re where
Rc = Rc || RL and re = r’e
Trang 18Characteristic Curves
• With Ib fixed, collector is a constant-current source
• With fixed steps in Ib, the space between the Ic lines
shows change in beta with collector current
Trang 19Troubleshooting
• The base-emitter and base-collector junctions in a transistor can be checked for opens and shorts by measuring resistance with a DMM or VOM
• You can usually distinguish the base-emitter from the base-collector because the resistance will read lower from base to collector Actually, what your meter is showing you is the voltage drop across the junction
• The above test also lets you separate NPN
transistors from PNP transistors