1. Trang chủ
  2. » Kỹ Thuật - Công Nghệ

Heat Transfer Handbook part 103 potx

10 240 0
Tài liệu đã được kiểm tra trùng lặp

Đang tải... (xem toàn văn)

THÔNG TIN TÀI LIỆU

Thông tin cơ bản

Định dạng
Số trang 10
Dung lượng 147,11 KB

Các công cụ chuyển đổi và chỉnh sửa cho tài liệu này

Nội dung

Direct Liquid Cooling of Microelectronic Compo-nents, in Advances in Thermal Modeling of Electronic Components and Systems, Vol... The Effect of Geometry on Heat Transfer by Free Convect

Trang 1

1016 HEAT TRANSFER IN ELECTRONIC EQUIPMENT

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

[1016],(70)

Lines: 1825 to 1867

———

4.11815pt PgVar

———

Short Page

* PgEnds: Eject

[1016],(70)

whereθ is a configuration factor which must be determined empirically However,

to obtain engineering estimates of the thermal performance, Bar-Cohen et al (1987) have proposed a value of 31.5 forθ The upper bound on the performance maps is

therefore marked with both the CHF limit and the condensation limit

13.8 THERMOELECTRIC COOLERS

The Peltiereffect is the basis forthe thermal electric cooler(TEC), which is a solid-state heat pump If a potential is placed across two junctions, heat will be absorbed into one junction and expelled from the other in proportion to the current Most material combinations exhibit the Peltier effect to some degree However, it is most

obvious across a p-n junction as shown in Fig 13.34 As electrons are transported from the p-side of a junction to the n-side, they are elevated to a higher-energy

state and thus absorb heat, resulting in cooling the surrounding area When they are

transported from the p-side to the n-side, they release heat.

The materials that have been used to make TEC include bismuth telluride (Bi2Te3), lead telluride (PbTe), and silicon germanium (SiGe) To obtain optimum parameters, these semiconductors are doped during fabrication Bi2Te3has the best performance

at temperatures of interest for electronic components and is most commonly used A TEC device is constructed by placing from one to several hundred thermocouples electrically in series and thermally in parallel between two pieces of metallized, thermally conductive ceramic acting as an electrical insulator For continuous cooling

at the low-temperature side of the TEC, the heat absorbed at the cold side, as well as the heat generated by the flow of electricity, must be removed from the hot side by one

of the thermal transport mechanisms described previously Solution of the governing equations for a thermoelectric couple yields a relation for the maximum temperature differential obtainable with such a device, as

∆Tmax= α2T c2

K = k a A a

L a +k b A b

R = ρA a L a

aA b A b

It may thus be observed that the maximum temperature differential can be enhanced

by minimizing the product of the thermal conductanceK and electrical, resistance R.

A TEC device is frequently rated by a figure of merit, as given by

FOM=ρ α2s

TEkTE

(13.96)

Trang 2

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

[1017],(71)

Lines: 1867 to 1899

———

-1.24886pt PgVar

———

Short Page PgEnds: TEX [1017],(71)

Figure 13.34 Thermoelectric cooler

whereα2

s is the Seebeck coefficient andρTE is the resistivity of the TEC element

Values of this figure of merit are typically in the range 0.002 to 0.005 K−1, but extensive research is under way to improve this FOM by as much as an order of magnitude in the next few years The coefficient of performance of a TEC is defined

as the ratio of heat pumped to the input power:

COP= heat pumped

input power = q c

Pin

(13.97) The optimum COP is given by

COPopt= Tavg

∆T

B − 1

where

B =1+ (FOM · Tavg) (13.99)

A TEC may be selected from the performance and COP curves for a given set of design criteria It is essential that the TEC and heat sink, as well as the power supply used to operate the TEC, be selected together For increased cooling capacity, TECs may be operated in parallel However, for lower chip temperatures it may be necessary

to cascade several TEC devices or to operate them in series

The biggest limitation in the use of a TEC for commercial electronics is the very low FOM Recent years have witnessed extensive research in the area of TECs from a material point of view to increase the FOM Thin-film supperlatice and quantum-well structures have shown evidence of providing high FOM compared to the state-of-the-art TEC

Trang 3

1018 HEAT TRANSFER IN ELECTRONIC EQUIPMENT

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

[1018],(72)

Lines: 1899 to 1975

———

0.20338pt PgVar

———

Normal Page PgEnds: TEX [1018],(72)

13.9 CHIP TEMPERATURE MEASUREMENT

As mentioned previously, the total thermal resistance of a package is usually the sum

ofθjc(junction to case) andθca(case to ambient) The object of most experimental programs is to determine these resistances This knowledge then allows the junction temperature to be predicted as a function of power and cooling medium temperature and flow rate.θjcandθcaare typically measured in a lab environment with the help

of test chips popularly known as test vehicles There are basically two measurement methods commonly used to determine the temperature of a test vehicle die The first makes use of a temperature-sensitive parameter on the test vehicle to determine the die temperature, such as one or more dedicated diodes of resistors Calibration of these temperature sensors can be very time consuming Furthermore, as a test vehicle can have more than one temperature sensor and there could also be part-to-part variability

in the test vehicle coming out of the factory, time to calibrate each temperature sensor could be enormous Solbrekken and Chiu (1998) introduced a simplified calibration procedure that utilizes single-resistance measurements either at room temperature or

at the anticipated test temperature In their proposed method 30 temperature sensors are selected randomly and are calibrated at three set-point temperatures Then the average intercept of resistance versus temperature for the 30 temperature sensors is calculated Later, forthe calibration of othertest vehicles forthe same generation

of products, the die is calibrated at a single temperature and the average intercept calculated forthe 30 samples is used in conjunction with the single-point calibration for determining the temperature of the test vehicle A second category of chip tem-perature measurement techniques includes liquid crystals, thermographic phosphors, laser scanners, infrared camera, and so on Each of these methods presents a unique set of concerns, ranging from temperature resolution to cost of implementation

13.10 SUMMARY

The fundamental principles and concepts for thermal management of electronics were presented in this chapter Simplified equations for first-order analysis of the temperature on electronic components were also introduced A variety of cooling techniques, including heat sinks, jet impingement cooling, liquid immersion cooling, and thermoelectric cooling, were also discussed

NOMENCLATURE

Roman Letter Symbols

a heat source area, m2

B constant, dimensionless

b heat source size, m

PCB spacing, m

Trang 4

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

[1019],(73)

Lines: 1975 to 1975

———

0.55142pt PgVar

———

Normal Page PgEnds: TEX [1019],(73)

Bi Biot number, dimensionless [= hL/k]

C constant in heat transfer coefficient correlations, dimensionless

C p specific heat, J/hg · K CHF critical heat flux, dimensionless COP coefficient of performance, dimensionless

c speed of sound, m/s

El Elenbaas number, dimensionless

El modified Elenbaas number, dimensionless

F ij radiation view factor fromi to j, dimensionless

FOM figure of merit, dimensionless

f impingement area ratio, dimensionless

g gravitational acceleration, m/s2

Kennedy (1959) spreading resistance factor, dimensionless hardness, N/m2

h heat transfer coefficient, W/m2· K

h f v latent heat of vaporization, J/kg · K

¯

h Planck’s constant, dimensionless

k thermal conductivity, W/m · K

k b Boltzmann constant, dimensionless

L length, width, orthickness, m

l mean free path, m

˙m mass flow rate, kg/s

N numberof atomic layers, dimensionless

n number, dimensionless

Nu Nusselt number, dimensionless [= hL/k]

P pressure, N/m2

plate to airparameter, dimensionless perimeter, m

p volume fraction, dimensionless

p c threshold volume fraction, dimensionless PrPrandtl number, dimensionless

= µC p /k

Q total heat flow, W

q heat flux, W/m2

R thermal resistance, °C/W or K/W

asymmetry parameter, dimensionless

r T asymmetry parameter, dimensionless

Ra Rayleigh number, dimensionless

= (gβ∆T L32)Pr

Re Reynolds number, dimensionless [= ρV L/µ]

Trang 5

1020 HEAT TRANSFER IN ELECTRONIC EQUIPMENT

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

[1020],(74)

Lines: 1975 to 2078

———

0.41089pt PgVar

———

Normal Page PgEnds: TEX [1020],(74)

S shape factor, m2

shape parameter, dimensionless

T temperature, °C or K

volume, m3

W characteristic length (length or width), m

x length ordistance, m

Y area-weighted interfacial gap, m

z clearspace between fins, m

∆k change in thermal conductivity, W/m · K

∆T temperature difference, °C or K

∆x distance between two points, m

Greek Letter Symbols

α thermal diffusivity, m2/s

Seebeck coefficient, dimensionless

β volumetric expansion coefficient, K−1

δ thickness orgap width, m

penetration depth, m heaterthickness, m

ε emissivity, dimensionless

ζ ratio of heat source area to substrate area, dimensionless

η fin efficiency, dimensionless

θ thermal resistance, °C/W

asperity angle, deg

conduction factor, dimensionless

µ dynamic viscosity, N· s/m2

ν kinematic viscosity, m2/s

π pi, dimensionless

ρ density, kg/m3

σ Stefan–Boltzmann constant, W/m2· K4

surface tension, N/m surface roughness, m

τ time constant, s

φ Debye temperature, K

ϕ particle volume fraction, dimensionless

maximum packing fraction, dimensionless

ϕm maximum packing fraction, dimensionless

χ ratio of logarithmic conductances, dimensionless

Subscripts

0 initial (at time= 0) orbased on channel inlet

1 item orentity 1

Trang 6

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

[1021],(75)

Lines: 2078 to 2078

———

0.00604pt PgVar

———

Normal Page PgEnds: TEX [1021],(75)

1D one-dimensional

2 item orentity 2

a ambient orentity a

b boundary orbase orentityb

bj bare junction base heat sink base area

ca case to ambient

cm control material

en equivalent normal

eq equivalent in-plane

ex external or excursion

f g between saturated liquid and saturated vapor fillerfiller

g interstitial fluid or gas (vapor)

ICP integrated circuit package

j junction a counter

jc junction to case

m continuous phase or matrix and maximum packing fraction

mc between interface and matrix

plane

Trang 7

1022 HEAT TRANSFER IN ELECTRONIC EQUIPMENT

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

[1022],(76)

Lines: 2078 to 2108

———

-5.80669pt PgVar

———

Normal Page PgEnds: TEX [1022],(76)

filler at constant pressure

r radiation or radial direction

mean condition

source source

ss steady state

T total oroverall

TE thermoelectric device TIM thermal interface material

z position along thez-coordinate direction

Superscripts

n normal direction

p in-plane direction

REFERENCES

Asheghi, M., Touzelbaev, M N., Goodson, K E., Leung, Y K., and Wong, S S (1996)

Temperature Dependent Thermal Conductivity of Single Crystal Silicon Layers in SOI

Substrates, Proc International Mechanical Engineering Congress and Exposition, Atlanta,

GA, Nov 17–22, DSC-Vol 59

Aung, W (1972) Fully Developed Laminar Free Convection between Vertical Plates Heated

Asymmetrically, Int J Heat Mass Transfer, 15, 1577–1580.

Aung, W., Fletcher, L S., and Sernas, V (1972) Developing Laminar Free Convection between

Vertical Flat Plates with Asymmetric Heating, Int J Heat Mass Transfer, 15, 2293–2308.

Bar-Cohen, A (1987) Thermal Management of Air and Liquid-Cooled Multi-chip Modules,

IEEE Trans Components Hybrids Manuf Technol., 10(2), 159–175.

Bar-Cohen, A., and Rohsenow, W M (1984) Thermally Optimum Spacing of Vertical Natural

Convection Cooled, Parallel Plates, J Heat Transfer, 106, 116–123.

Bar-Cohen, A., and Simon, T W (1986) Wall Superheat Excursions in the Boiling Incipience

of Dielectric Fluids, Heat Transfer Eng., 9(3), 19–30.

Bar-Cohen, A., Perelman, A., and Sabag, A (1987) Bubble Pumped Convective Augmentation

on Vertical Submerged Condenser Surfaces, Proc ASME/JSME Thermal Engineering Joint Conference, Vol 3, pp 431–440.

Bergles, A E., and Bar-Cohen, A (1990) Direct Liquid Cooling of Microelectronic

Compo-nents, in Advances in Thermal Modeling of Electronic Components and Systems, Vol II,

A Bar-Cohen and A D Kraus, eds., ASME, New York, pp 233–342

Trang 8

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

[1023],(77)

Lines: 2108 to 2146

———

8.0pt PgVar

———

Normal Page PgEnds: TEX [1023],(77)

Bilitzky, A (1986) The Effect of Geometry on Heat Transfer by Free Convection from a Fin Array, M.S thesis, Department of Mechanical Engineering, Ben-Gurion University of the Negev, BeerSheva, Israel

Bodoia, J R., and Osterle, J F (1964) The Development of Free Convection between Heated

Vertical Plates, J Heat Transfer, 84, 40–44.

Brdlik, P M., and Savin, V K (1965) Heat Transfer between an Axisymmetric Jet and a Plate

Normal to the Flow, J Eng Phys., 8, 91–98.

Chesser, J B., Peterson, G P., and Lee, S (2000) A Simplified Method for Determining the

Capillary Limitation of Flat Plate Heat Pipes in Electronic Cooling Applications, in Proc.

34th National Heat Transfer Conference, Pittsburgh, PA.

Cooper, M G., Mikic, B B., and Yovanovich, M M (1969) Thermal Contact Resistance, Int.

J Heat Mass Transfer, 12, 279–300.

Cross, R (1996) Synergistic Combinations of Thermally Conductive Fillers in Polymer

Ma-trices, Microelectron Int., 41, 27–29.

Danielson, R D., Tousignant, L., and Bar-Cohen, A (1987) Saturated Pool Boiling

Charac-teristics of Commercially Available Per-fluorinated Inert Liquids, Proc 1987 ASME/JSME Thermal Engineering Joint Conference, Honolulu, HI, Vol 3, pp 419–430.

Davis, L C., and Artz, B E (1995) Thermal Conductivity of Metal Matrix Composites, J.

Appl Phys., 77, 4954–4960.

Devpura, A., Phelan, P E., and Prasher, R S (2000) Percolation Theory Applied to the

Analysis of Thermal Interface Materials in Flip-Chip Technology, Proc Itherm, May 23–

26, Vol 1, pp 21–29

Dunn, P D., and Reay, D A (1994) Heat Pipes, 4th ed., ElsevierScience, Oxford.

Eckert, E R G., and Drake, R M., Jr (1987) Analysis of Heat and Mass Transfer, Hemisphere

Publishing, New York

El Sheikh, H A., and Garimella, S V (2000) Heat Transfer from Pin-Fin Heat Sinks under

Multiple Impinging Jets, IEEE Trans Adv Packag., Vol 23(1), 113–120.

Elenbaas, W (1942) Heat Dissipation of Parallel Plates by Free Convection, Physica, 9(1),

665–671

Fletcher, L S (1972) A Review of Thermal Control Materials for Metallic Junctions, J.

Spacecr Rockets, 9(12), 849–850.

Geisler, K J., Kitching, D., and Bar-Cohen, A (1996) A Passive Immersion Cooling Mod-ule with a Finned Submerged Condenser, presented at Arthur E Bergles Symposium on Process, Enhanced and Multi-phase Heat Transfer

Gerstmann, J., and Griffith, P (1967) Laminar Film Condensation on the Underside of

Hori-zontal and Inclined Surfaces, Int J Heat and Mass Transfer, 10, 551–580.

Graham, K., and Witzman, S (1988) Analytical Correlation of Thermal Design of Electronic

Packages, in Cooling Technology for Electronic Equipment, Hemisphere Publishing, New

York

Haramura, Y., and Katto, Y (1983) A New Hydrodynamic Model of Critical Heat Flux Applicable Widely to Both Pool and Forced Convection Boiling on Submerged Bodies

in Saturated Liquids, Int J Heat Mass Transfer, 26, 389–399.

Heaton, H S., Reynolds, W C., and Kays, W M (1964) Heat Transfer in Annular Passages:

Simultaneous Development of Velocity and Temperature Fields in Laminar Flow, Int J.

Heat Mass Transfer, 7, 763–781.

Trang 9

1024 HEAT TRANSFER IN ELECTRONIC EQUIPMENT

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

[1024],(78)

Lines: 2146 to 2189

———

4.0pt PgVar

———

Normal Page PgEnds: TEX [1024],(78)

Howard, R T., Furkay, S S., Kilburn, R F., and Monti, G., Jr (1984) Thermal Management Concepts in Micro Electronic Packaging: From Component to System, International Society

for Hybrid Microelectronics, Silver Spring, MD

Howell, J R (1982) A Catalog of Radiative Transfer Factors, McGraw-Hill, New York.

Incropera, F P., and DeWitt, D P (1996) Fundamentals of Heat and Mass Transfer, 4th ed.,

Wiley, New York

Jones, C D., and Smith, L F (1970) Optimum Arrangement of Rectangular Fins on Horizontal

Surfaces for Free Convection Heat Transer, J Heat Transfer, 92, 6.

Kays, W M., and Crawford, M E (1993) Convective Heat and Mass Transfer, McGraw-Hill,

New York

Kennedy, D P (1959) Heat Conduction in a Homogeneous Solid CircularCylinderof

Iso-tropic Media, IBM Report TR 00.15072.699.

Kitching, D., Ogata, T., and Bar-Cohen, A (1995) Thermal Performance of a Passive

Immersion-Cooling Multi-chip Module, J Enhanced Heat Transfer, 2(1/2), 95–103.

Kraitshev, S G., and Schl¨under, E U (1973) Paper presented at the Fachausschuss Trock-nungstechnik der Verfahrenstechnischen Gelischaft im VerinDeutscher Ingenieure (VDI),

Colmar, France; synopsis in 1973, Chem Ing Tech., 42, 1324.

Kraus, A D (1958) The Use of Steady State Electrical Network Analysis in Solving Heat Flow

Problems, Proc 2nd National ASME/AIChE Heat Transfer Conference, Chicago, Aug.

Kraus, A D., and Bar-Cohen, A (1983) Thermal Analysis and Control of Electronic Equip-ment, McGraw-Hill/Hemisphere Publishing, New York.

Krotzsch, P (1968) W¨arme und Stoff¨ubertragung bei Pallstr¨omung aus D¨usenund

Blenden-teldem Chem Ing Tech., 40(7), 339–344.

Kutateladze, S S (1951) A Hydrodynamic Theory of Changes in the Boiling Process under

Free Convection Conditions, Izv Akad Nauk SSSR, Otd Tekhn Nauk, 4, 529 (translation

in AEC-TR-1441).

Lee, T Y., and Simon, T W (1989) High-Heat-Flux Forced Convection Boiling from Small

Regions, Heat Transfer in Electronics, 1989, ASME-HTD-111, ASME, New York, p 7.

Lee, S., Song, S., Au, V., and Moran, K P (1995) Constriction/Spreading Resistance Model

forElectronic Packaging, Proc 4th ASME/JSME Thermal Engineering Joint Conference,

Vol 4, pp 199–206

Lewis, T B., and Nielsen, L E (1970) Dynamic Mechanical Properties of Particulate Filled

Composites, J Appl Polym Sci., 14, 1449–1471.

Lewis, R W., Morgan, K., Thomas, H R., and Seetharamu, K N (1996) The Finite Element Method in Heat Transfer Analysis, Wiley, New York.

Maddox, D E., and Bar-Cohen, A (1991) Thermofluid Design of Submerged-Jet

Impinge-ment Cooling forElectronic Components, Proc ASME/AIChE National Heat Transfer Con-ference, Minneapolis, MN.

Madhusudan, C V (1995) Thermal Contact Conductance, Springer-Verlag, New York.

Majumdar, A (1993) Microscale Heat Conduction in Dielectric Thin Films, J Heat Transfer,

115, 7–16

Martin, H (1977) Heat and Mass Transfer between Impinging Gas Jets and Solid Surfaces, in

Advances in Heat Transfer, Vol 13, J P Hartnett and T F Irvine, Jr., eds., Academic Press,

New York, pp 1–60

McAdams, W H (1954) Heat Transmission, McGraw-Hill, New York.

Trang 10

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

[1025],(79)

Lines: 2189 to 2223

———

10.0pt PgVar

———

Normal Page PgEnds: TEX [1025],(79)

Mix, D., and Bar-Cohen, A (1992) Transient and Steady-State Thermo-structural Modeling of

a PDIP Package, ASME Publication 92-WA/EEP-10, ASME 1992 WinterAnnual Meeting,

Anaheim, CA, Nov

Miyatake, O., and Fujii, T (1972) Free Convective Heat Transfer between Vertical Parallel

Plates: One Plate Isothermally Heated and the Other Thermally Insulated, Heat Transfer Jpn Res., 3, 30–38.

Miyatake, O., Fujii, T., Fujii, M., and Tanaka, H (1973) Natural Convective Heat Transfer be-tween Vertical Parallel Plates: One Plate with a Uniform Heat Flux and the Other Thermally

Insulated, Heat Transfer Jpn Res., 4, 25–33.

Moffat, R J., and Ortega, A (1988) Direct Air-Cooling of Electronic Components, in Ad-vances in Thermal Modeling of Electronic Components and Systems, Vol 1, A Bar-Cohen

and A D Kraus, eds., ASME, New York, pp 129–265

Mudawar, I., and Wadsworth, D C (1990) Critical Heat Flux from a Simulated Electronic

Chip to a Confined RectangularImpinging Jet of Dielectric Liquid, Int J Heat Mass Transfer, 34, 1465–1480.

Murthy, S S., Joshi, Y K., and Nakayama, W (2000) Single Chamber Compact

Thermo-syphons with Micro-fabricated Components, Proc Itherm, May 23–26, pp 321–327.

Nan, C W., Birringer, R., Clarke, D R., and Gleiter, H (1997) Effective Thermal Conductivity

of Particulate Composites with Interfacial Thermal Resistance, J Appl Phys., 81, 6692–

6699

National Electronics Manufacturing Institute (1996) Technology Roadmap, NEMI, Herndon,

VA

Negus, K J., Yovanovich, M M., and Beck, J V (1989) On the Non-dimensionalization of

Constriction Resistance for Semi-infinite Heat Flux Tubes, J Heat Transfer, 111, 804–807.

Nelson, R D., Sommerfeldt, S., and Bar-Cohen, A (1994) Thermal Performance of an Integral

Immersion Cooled Multi-chip Module Package, IEEE Trans Components Packag Manuf.

Technol., A17(3), 405–412.

Nonn, T., Dagan, Z., and Jiji, L M (1988) Boiling Jet Impingement Cooling of Simulated

Microelectronic Heat Sources, ASME-88-WA/EEP-3, ASME, New York.

Park, K A., and Bergles, A E (1988) Effects of Size of Simulated Microelectronic Chips on

Boiling and Critical Heat Flux, J Heat Transfer, 110, 728–734.

Pecht, M., Lall, P., and Hakim, E (1992) The Influence of Temperature on Integrated Circuit

Failure Mechanisms, in Advances in Thermal Modeling of Electronic Components and Systems, Vol 3, A Bar-Cohen and A D Kraus, eds., ASME, New York, pp 61–152.

Prasher, R S (2001) Surface Chemistry and Characteristics Based Model for the Contact

Resistance of Polymeric Interstitial Thermal Interface Materials, J Heat Transfer, 123,

969–975

Prasher, R S., and Phelan, P E (1998) Size Effects on the Thermodynamic Properties of Thin

Solid Films, J Heat Transfer, 120(4), 1078–1081.

Rohsenow, W M (1951) A Method of Correlating Heat Transfer Data for Surface Boiling of

Liquids, Trans ASME, 74, 969–976 (reprinted in Proc 3rd ASME/JSME Thermal Engi-neering Joint Conference, Vol 1, pp 503–512.

Sathe, S B., and Joshi, Y (1992) Natural Convection Liquid Cooling of a Substrate-Mounted

Protrusion in a Square Enclosure: A Parametric Study, J Heat Transfer, 114, 401–409.

Sauer, H J., Jr (1992) Comparative Enhancement of Thermal Contact Conductance of Various

Ngày đăng: 05/07/2014, 16:20

TỪ KHÓA LIÊN QUAN