Supplementary Material for Publication

Supplementary Material for PublicationReversible metallization and carrier transport behavior of In2S3 under high pressure Yuqiang Li,1 Yang Gao,2,3 Ningru Xiao,4 Pingfan Ning,1 Liyuan Y

Supplementary Material for Publication

Reversible metallization and carrier transport behavior of In2S3 under high pressure

Yuqiang Li,1 Yang Gao,2,3 Ningru Xiao,4 Pingfan Ning,1 Liyuan Yu,1 Jianxin Zhang,1 Pingjuan Niu,1,

Yanzhang Ma,3 Chunxiao Gao2,

1Tianjin Key Laboratory of Advanced Electrical Engineering and Energy Technology, School of Electrical Engineering and Automation, Tianjin Polytechnic University, Tianjin, 300387, People’s Republic of China

2State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, People’s Republic of China

3Department of Mechanical Engineering, Texas Tech University, Lubbock, Texas, 79409, United States

of America

4School of Science, Tianjin Polytechnic University, Tianjin, 300387, People’s Republic of China

a) Author to whom correspondence should be addressed

Email: niupingjuan@tjpu.edu.cn and cc060109@qq.com

A1

Additional Figure Figure A1

Figure A1 (a) Configuration of a complete microcircuit on a diamond anvil: (1) the Mo electrodes, (2) the Al2O3 layer deposited on the Mo film; A, B, C, and D are the four contact ends of the microcircuit

Figure A2

A2

Figure A2：The manufacturing process of the microcircuit on a diamond anvil

(a)A clean diamond by H2SO4 and HNO3 chemical treatment

(b)Molybdenum thin film was deposited on one diamond anvil

(c)Molybdenum thin film was patterned into four detecting electrodes by photolithography technique and chemical etching

(d) Al2O3 layer was deposited on the Mo film by means of the magnetron sputtering technique

(e) Al2O3 layer thin film was patterned into four detecting electrodes by photolithography technique

Additional Tables

Table A1.The sputtering parameters of molybdenum film

Sputtering method Radio Frequency Magnetron

Sputtering

Substrate temperature 573 K

A3

Table A2.The parameters of photolithography process

Photolithography method Contact photolithography Photoresist type Positive photoresist

Table A3.The sputtering parameters of alumina film

Sputtering method Reactive sputtering

Substrate temperature 573 K

A4