types and applications of materials

... that knowledge of the mesh currents permits determination of all the other voltages and currents in the circuit Examples 3.7, 3.8 and 3.9 further illustrate some of the details of this method ... behavior of a circuit containing multiple sources The principle of superposition applies to any linear system and for a linear circuit may be stated as follows: sum of N voltages and currents, each of ... itself, and therefore this procedure is equivalent to “zeroing” the output of one of the voltage sources If, on the other hand, we wished to cancel the effects of a current source, it would stand

Ngày tải lên: 08/04/2014, 23:05

... stage of the synthesis Control of the size and shape of the particles can be obtained through the use of various distinct protein cages in an expanding library of structures (Douglas and Young,1998; ... magnetic mapping of organs, as magnetic carriers for identification and isolation of blood cells and antibodies and for transportation of drugs to the places of diseases (Reimer and Weissleder, ... five polymorphs of FeOOH and four of Fe2O3 Characteristics of these oxide compounds include mostly the trivalent state of the iron, low solubility and brilliant colors (Cornell and Schwertmann,

Ngày tải lên: 28/05/2014, 14:52

... and G Margaritondo (Editors), Heterojunction Band Discontinuities: Physics and Device Applications, Amsterdam: North-Holland (1987) [119] H Mizuta and T Tanoue, The Physics and Applications of ... (1981) [36] F Capasso and G Margaritondo, Editors, Heterojunction Band Discontinuities: Physics and Device Applications, Amsterdam: North-Holland (1987) [37] S.L Chuang, Physics of Optoelectronic ... xxx.lanl.gov/pdf/cond-mat/0204262 [153] L.D Landau, “The theory of superfluidity of helium II,” Zh Eksp Teor Fiz., Vol 11, 1941, p 592 [154] L.D Landau, “The theory of superfluidity of helium II,” J Phys USSR,

Ngày tải lên: 04/06/2014, 15:17

... Use of Nickel and Tantalum from a Materials Science Point of View 171 Yu Cao and Lars Nyborg Other applications: Electrical, Structural and Biomedical 195 Properties and Applications of Ceramic ... proofread the chapters and make suggestions to the authors The final editing of all materials was conducted by In-Tech publications Rosario A Gerhardt Professor of Materials Science and Engineering ... Institute of Technology Atlanta, USA Trang 11Thin Films and Electromagnetic ApplicationsPart 1 Thin Films and Electromagnetic Applications Trang 13Identification and Kinetic Properties of the Photosensitive

Ngày tải lên: 20/06/2014, 04:20

... instant of time. The value of the first derivative was calculated as the right-hand side of rate equations (3), and that of the second derivative, as the derivative of the right- hand side of Eqs. ... instant of time. The value of the first derivative was calculated as the right-hand side of rate equations (3), and that of the second derivative, as the derivative of the right- hand side of Eqs. ... charge states of ISi and IC in 4H-SiC are the same as those in 3C-SiC, the ranges of m and n in Eqs (1a) and (2a) are limited to m ∈ {0, 1, 2, 3, and 4} and n ∈ {0, ±1, and 2} Boron

Ngày tải lên: 20/06/2014, 04:20

... first Step (A) and then the repetition of Steps (B) and (C). Figure 4 is the process for low temperature deposition and evaluation of the film, consisting of Steps (A), (D) and (E). Step (D) ... first Step (A) and then the repetition of Steps (B) and (C). Figure 4 is the process for low temperature deposition and evaluation of the film, consisting of Steps (A), (D) and (E). Step (D) ... Properties and Applications of Silicon Carbide Fig 22 TEM micrograph of the cross section of the silicon carbide film, shown in Figure 21... increasing number of repetitions of

Ngày tải lên: 20/06/2014, 04:20

... B, C, and L, and that the values of B/A, C, and L, and the temperature de- pendences of C and L for Si-face are different from those for C-face Finally, we have discussed the mechanism of the ... B, C, and L, and that the values of B/A, C, and L, and the temperature de- pendences of C and L for Si-face are different from those for C-face Finally, we have discussed the mechanism of the ... and prediction of the properties of this complex class of materials Silicon carbide is another wide bandgap semiconductor which has been considered a possible candidate for spin electronic applications

Ngày tải lên: 20/06/2014, 04:20

... characteristics of main and higher modes in regular waveguides of arbitrary cross–section geometry containing piecewise homogeneous materials as well as the distribution of the EM field inside and outside ... characteristics of main and higher modes in regular waveguides of arbitrary cross–section geometry containing piecewise homogeneous materials as well as the distribution of the EM field inside and outside ... r SiC , μ r SiC and S – has the constitutive parameters ε r a , μ r a of ambient air. Magnitudes ε r SiC = Re (ε r SiC ) - Im (ε r SiC ) and Properties and Applications of Silicon Carbide118

Ngày tải lên: 20/06/2014, 04:20

... characterization of chemical and biological agents and materials, remote and standoff early-warning for chemical-biological warfare threats, and imaging of concealed weapons and explosives, just ... potential payoffs of THz sensing and imaging for an array of military, security and industrial applications These applications include the spectroscopic-based detection identification and characterization ... global demand for THz-frequency applications and this warrants a new class of IMPATT oscillators which would outclass conventional Si and GaAs IMPATTs Investigations on the prospects of Wide Bandgap

Ngày tải lên: 20/06/2014, 04:20

... formation of alternating Ni-silicide and C layers The systems which show the tendency of the formation of periodic bands have relatively large parabolic rate constant k and k0 values (intercept of the ... formation of alternating Ni-silicide and C layers The systems which show the tendency of the formation of periodic bands have relatively large parabolic rate constant k and k0 values (intercept of the ... silicides and controls the rate of Ni2Si formation in the second reaction stage As a result of fast dissociation of SiC and enhanced diffusion of Ni, Ni2Si is formed quicker under the action of argon

Ngày tải lên: 20/06/2014, 04:20

... made by extrusion and sintering were reported to withstand shocks of almost 500C and lost only 12% of strength after 400 shocks of 230C Strength slowly decreased with cycling and did not plateau ... made by extrusion and sintering were reported to withstand shocks of almost 500C and lost only 12% of strength after 400 shocks of 230C Strength slowly decreased with cycling and did not plateau ... whisker defects Many of these will be considered in this section, and a discussion of interface effects and SiCw defects is given in Section 3.8 Properties of the Al2O3 and sintering additives

Ngày tải lên: 20/06/2014, 04:20

... processes of C/SiC in terms of active and passive oxidation of silicon carbide 2 Aerospace applications for silicon carbide Silicon carbide is defined by the Engineered Materials Handbook (Reinhart, ... processes of C/SiC in terms of active and passive oxidation of silicon carbide 2 Aerospace applications for silicon carbide Silicon carbide is defined by the Engineered Materials Handbook (Reinhart, ... the influence of a variety of additives, including carbon and silicon carbide, on the processing and oxidation resistance of Hf and Zr diborides These works showed that the addition of SiC as secondary

Ngày tải lên: 20/06/2014, 04:20

... arrester of manufacturer A Fig 5 Surge arrester of manufacturer C magnets Blocks of SiC gap electrodes and nonlinear resistors Blocks of SiC Group of gap electrodes Blocks of SiC Trang 8Fig 6 Group of ... Surge arrester of manufacturer A Fig 5 Surge arrester of manufacturer C magnets Blocks of SiC gap electrodes and nonlinear resistors Blocks of SiC Group of gap electrodes Blocks of SiC Trang 7 ... leakage current amplitude of 0.726 mA, distortion of 18 % and phase difference of 510, which may indicate some degradation of its internal components;  surge arresters C5 and C6 had high RIV values,

Ngày tải lên: 20/06/2014, 04:20

... Fundamentals of biomedical applications of biomorphic SiC 297 Fundamentals of biomedical applications of biomorphic SiC Mahboobeh Mahmoodi and Lida Ghazanfari X Fundamentals of biomedical applications ... sizes, shapes, and orientation of the pores as well as grains. The lightweight, cytocompatible for human fibroblasts and osteoblasts (Naji and Harmand, 1991) and open porosity of these materials ... them great candidates for biomedical applications. 3. Biomedical applications of SiC Silicon carbides are emerging as an important class of materials for a variety of biomedical applications,

Ngày tải lên: 20/06/2014, 04:20

... coating of a silicon carbide stent and a long-term release of the desired agent, PLA and PLGA are biocompatible materials useful for a variety of applications, including the design and properties of ... coating of a silicon carbide stent and a long-term release of the desired agent, PLA and PLGA are biocompatible materials useful for a variety of applications, including the design and properties of ... NCLP profiles were obtained for each surface over a distance of 3.094 mm with a lateral resolution of 1µm using a Gaussian filter and an attenuation factor of 60% at a cut-off wavelength of 0.59

Ngày tải lên: 20/06/2014, 04:20

... et al, 1993) The band gap of Si, GaAs and of 6H-SiC are about to 1.1 eV, 1.4 eV and 2.86 respectively We found a compilation of properties of: Silicon, GaAs, 3C-SiC (cubic) and 6H-SiC (alpha) ... et al, 1993) The band gap of Si, GaAs and of 6H-SiC are about to 1.1 eV, 1.4 eV and 2.86 respectively We found a compilation of properties of: Silicon, GaAs, 3C-SiC (cubic) and 6H-SiC (alpha) ... 12Properties and Applications of Silicon Carbide362SiC polytypes are differentiated by the stacking sequence of each tetrahedrally bonded Si-C bilayer In fact the distinct polytypes differ in both band

Ngày tải lên: 20/06/2014, 04:20

... 100 mm/min) and higher (v = 900 mm/min) levels of feed rate  Examination of the influence of number of passes on jet footprint generation: To understand the influence of number of passes on ... 100 mm/min) and higher (v = 900 mm/min) levels of feed rate  Examination of the influence of number of passes on jet footprint generation: To understand the influence of number of passes on ... of focusing nozzle diameter to orifice diameter of 3-4 for optimum performance (Chalmers, 1991), a d f of 1.06 mm and d o of 0.3 mm were employed Garnet abrasive of 80 mesh size with an m f of

Ngày tải lên: 20/06/2014, 04:20

... effect on the DBT of the material and evaluating the thermal softening and relative hardness as a result of irradiation of the laser beam at a constant cutting speed The effects of laser heating ... effect on the DBT of the material and evaluating the thermal softening and relative hardness as a result of irradiation of the laser beam at a constant cutting speed The effects of laser heating ... compatibility of the software (AdvantEdge from Third Wave Systems) with the desired laser heating and thermal softening effect (Virkar & Patten, 2009); i.e., a proof of concept A new and more

Ngày tải lên: 20/06/2014, 04:20

... 0.5, and (e) 1.0 mM of Pb2+ and (f) 1.0 mM of Ca2+ 33 Figure 2-8 DLS data of µM of ZnCdSe (λmax = 469 nm) treated with (a) 0, (b) 0.1, (c) 0.25, (d) 0.5, and (e) 1.0 mM of Pb2+ and (f) 1.0 mM of ... excited at 345 nm ml of µM of ZnCdSe (λmax = 469 nm) was added to ml of 0.1, 0.25, 0.5 and 1.0 mM of Pb2+ ions ml of deionized water and 1.0 mM of Ca2+ were used as controls sets of samples were prepared ... absorption spectrum of µM of ZnCdSe (λmax = 469 nm) treated with (a) 0, (b) 0.1, (c) 0.25, (d) 0.5, and (e) 1.0 mM of Pb2+ and (f) 1.0 mM of Ca2+ 33 Figure 2-8 DLS data of µM of ZnCdSe (λmax =...

Ngày tải lên: 11/09/2015, 09:02

... then may be set to For the simple case of and and and are set to to the output of the IFFT is: where Of course the scaling by a factor of two is immaterial and can be dropped This real orthogonal ... concise summary of the present state of the art of the theory and practice of OFDM technology The authors believe that the time is ripe for such a treatment Particularly based on one of the author's ... effects of clipping presents results of the authors that have not yet been published elsewhere The book concludes with descriptions of three very important and diverse applications of OFDM that...

Ngày tải lên: 02/03/2013, 16:58