silicon carbide applications in power electronics

... occupiedarea minimization, scalability, power consumption minimization and limit cycle containmentplay a key role The power electronics engineer is, in this case, deeply involved in the solution ... developments in its application to powerconverters 1.1 MODERN POWER ELECTRONICS Classical power electronics may be considered, under several points of view, a mature discipline.The technology and engineering ... For example, in the case of MOSFET or IGBT switches the drivingaction consists in the charging and discharging of the device input capacitance, which is, in fact, a power consuming operation

Ngày tải lên: 14/05/2014, 21:44

... maintenance scheduling [15].For a special case, where some or all variables are constrained to take on integer values, the technique is referred to as integer programming [1] Applications of integer ... efficient in maintaining the diversity of theswarm [68] (more similar to the ideal social interaction in a community), since all the particles use the tion related to the most successful particle in ... described inSection III Section IV provides an extensive literature survey on the applications of PSO in power systems Some potentialapplications of PSO in power systems, which are not yetexplored in

Ngày tải lên: 22/09/2016, 20:24

... PEIE International Conference is to bring together vative academics and industrial experts in the field of power electronics, commu-nication engineering, instrumentation engineering, digital electronics, ... process involves characterising the incoming requests using fuzzy rules and then generating updating messages and finally updating the access privilege levels to reflect the level of users In this ... proposed Positive tainting and negative tainting, that has conceptual difference with that of the traditional tainting Positive tainting is based on the identification, marking, and tracking of trusted,

Ngày tải lên: 04/03/2020, 17:34

... Trang 1SILICON CARBIDE - MATERIALS, PROCESSING AND APPLICATIONS IN ELECTRONIC DEVICES Edited by Moumita Mukherjee Trang 2Silicon Carbide - Materials, Processing and Applications in Electronic ... Engineering Mechanics, Tsinghua University, Beijing, China 1 Introduction Excellent physical and chemical properties make silicon carbide (SiC) a prominent candidate for a variety of applications, ... Printed in Croatia A free online edition of this book is available at www.intechopen.com Additional hard copies can be obtained from orders@intechweb.org Silicon Carbide - Materials, Processing

Ngày tải lên: 19/06/2014, 11:20

... Machining with Abrasive Waterjets in Silicon Carbide Ceramic Material 469 S Srinivasu D and A Axinte D Ductile Mode Micro Laser Assisted Machining of Silicon Carbide (SiC) 505 Deepak Ravindra, ... Printed in India A free online edition of this book is available at www.intechopen.com Additional hard copies can be obtained from orders@intechweb.org Properties and Applications of Silicon Carbide, ... Semi-Insulating Silicon Carbide 3D V Savchenko, B D Shanina and E N Kalabukhova One-dimensional Models for Diffusion and Segregation of Boron and for Ion Implantation of Aluminum in 4H-Silicon Carbide

Ngày tải lên: 20/06/2014, 04:20

... Defects in High-Purity Semi-Insulating Silicon Carbide 23 It would seem that one could now neglect the quadratic terms and solve the linear differential equations. In this case, we would obtain ... Ion Implantation of Aluminum in 4H-Silicon Carbide 29 One-dimensional Models for Diffusion and Segregation of Boron and for Ion Implantation of Aluminum in 4H-Silicon Carbide Kazuhiro Mochizuki ... and V in 2 1015-cm-3-doped n-type 4H-SiC after 15-min annealing at 1900°C simulated from the initial concentration profiles in Fig 2 36 Properties and Applications of Silicon Carbide

Ngày tải lên: 20/06/2014, 04:20

... be silicon carbide From a small number of silicon-oxygen bonds in Figure 8 (b), some of the silicon-carbon bonds in the remaining intermediate species show that it has oxidized during storage in ... be silicon carbide From a small number of silicon-oxygen bonds in Figure 8 (b), some of the silicon-carbon bonds in the remaining intermediate species show that it has oxidized during storage in ... reducing the excess silicon in the film is explained, adopting the process using hydrogen chloride gas shown in Figure 2 Figure 7 shows the quadrupole mass spectrum measured during the silicon carbide

Ngày tải lên: 20/06/2014, 04:20

... the interface is initially large and is suppressed by the accumulation of emitted Si atoms near the interface with increasing oxide thickness, i.e., the oxidation rate is not enhanced in the thin ... but is quickly suppressed with increasing thickness To describe this change in the interfacial reaction rate, Kageshima et al introduce the following equation as the interfacial reaction rate constant, ... model", takingthe Si and C emissions into the oxide into account, which lead to a reduction of interfacialreaction rate (20) Considering Si and C atoms emitted from the interface during the oxidation

Ngày tải lên: 20/06/2014, 04:20

... will revolutionize the power electronics Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits ... 2006) The compelling system benefits of using SiC Schottky diodes, power MOSFETs, PiN diodes have resulted in rapid commercial adoption of this new technology by the power supply industry The characteristics ... 5Electrodynamical Modelling of Open Cylindrical and Rectangular Silicon Carbide WaveguidesL Nickelson, S Asmontas and T Gric X Electrodynamical Modelling of Open Cylindrical L Nickelson, S

Ngày tải lên: 20/06/2014, 04:20

... Trang 3Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz ElectronicsMoumita Mukherjee X Silicon Carbide Based Transit Time Devices: The New Frontier in High-power ... growth in more recent years is arguably most closely linked to the potential payoffs of THz sensing and imaging for an array of military, security and industrial applications These applications include ... Transit-Time (ATT) devices are finding increasing applications in advanced RADAR, missile seekers and MM-wave communication systems The performance of conventional Si (Silicon) and GaAs (Gallium Arsenide)-based

Ngày tải lên: 20/06/2014, 04:20

... Si in the silicides, higher binding energy position and more symmetrical line shape (see insert in Fig 1) are obtained The shakeup satellite is shifted to higher binding energy upon increasing ... Si in the silicides, higher binding energy position and more symmetrical line shape (see insert in Fig 1) are obtained The shakeup satellite is shifted to higher binding energy upon increasing ... changes with increasing etching time; preferential sputtering of Si occurs, resulting in enrichment of the heavier element Ni The effect of preferential sputtering decreases with increasing ion beam

Ngày tải lên: 20/06/2014, 04:20

... found in the bulk is believed to originate from oxidation scales on the composite surfaces flowing into internal interfaces During creep, the glassy phase apparently seeps into grain boundaries, interfaces, ... found in the bulk is believed to originate from oxidation scales on the composite surfaces flowing into internal interfaces During creep, the glassy phase apparently seeps into grain boundaries, interfaces, ... axis and retain their original neighbors Above the threshold stress, which relates to whisker pinning, Rachinger grain boundary sliding (GBS) becomes the dominant mechanism (region #2) In this process,

Ngày tải lên: 20/06/2014, 04:20

... with single 6-rings in ABC sequence with single 4-rings or 6-2 rings (b) ATO with single 4- or 6-rings (c) AFI with single 4- or 6-rings (d) VFI with single 6-rings (e) ATV with single 4-rings ... ordering in amorphous phase is the key point for applications in optoelectronics devices 34 12 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Will-be-set-by -IN- TECH ... achieved controlling the stacking mode (polytypism assimilated to stacking 32 10 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Will-be-set-by -IN- TECH model 3C-SiC...

Ngày tải lên: 19/06/2014, 11:20

... 2009, 2010) Photoluminescence spectrum from the front surface of the nanocrystalline film 70 Silicon Carbide – Materials, Processing and Applications in Electronic Devices containing cubic 3C and ... as well as the insulating layers in the manufacture of integrated circuits Silicon structures with a hidden layer of silicon carbide can be used as a SOIstructure (silicon- on-insulator), which ... implantation into silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form polycrystalline or epitaxial cubic SiC (β-SiC) layers in silicon (Liangdeng...

Ngày tải lên: 19/06/2014, 11:20

... 2004) was introduced In Fig 4, the horizontal coordinate is along the dashed line in Fig 3, and the longitudinal coordinate is the intensity ratio According to the intensity ratio, the scanning scope ...  j '  =  cos δ sin δ cos γ − cos δ sin δ    − cos δ sin γ  k '   cos δ sin δ cos γ − cos δ sin δ cos2 δ + sin δ cos γ − sin δ sin γ cos δ sin γ   i    sin δ sin γ   j    ... during pressurization and hence allows obtaining in a single experiment the entire drainage curve characterizing capillarity in high-temperature infiltration of particles by molten metal (Bahraini...

Ngày tải lên: 19/06/2014, 11:20

... a confinement dimension in the range of 2.5 to nm, in good agreement with the TEM image After 10h annealing, the TO and LO peaks become sharper and more intense, indicating an increase in the ... of Korea Introduction Structural defects in silicon carbide (SiC) single crystals such as dislocations, micropipes, inclusions, etc., have been investigated by different methods, including x-ray ... surprising due to the model of an in nite medium considered within the classical theory of linear elasticity Moreover, in reality, the dislocation 192 Silicon Carbide – Materials, Processing and Applications...

Ngày tải lên: 19/06/2014, 11:20

... GRMF in both oxidizing ambient 218 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Fig 11 Determination of growth rate multiplication factor between both terminating ... for monitoring involved gases into and out of the process tubes and a loading station used for loading (or unloading) wafers into (or from) the process tubes as shown in figure The heating assembly ... of a certain size; at large values the pore occupies the whole inclusion boundary 204 18 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Will-be-set-by -IN- TECH Summary...

Ngày tải lên: 19/06/2014, 11:20

... (2004) Silicon Carbide: Fundamental Questions and Applications to current device technology, Springer-Verlag, Berlin, Germany 256 26 Silicon Carbide – Materials, Processing and Applications in Electronic ... for treating long range interactions in ab initio and force-field-based calculations in clusters, J Chem Phys 110: 2810–2821 Tuckerman, M E & Parrinello, M (1994) Integrating the car-parrinello ... 248 18 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Will-be-set-by -IN- TECH Fig Snapshot of the SiC-2×2 surface Pink and grey spheres represent carbon and silicon...

Ngày tải lên: 19/06/2014, 11:20

... incorporation of C does not induce significant interface reconstruction Namely, the two Si layers proximal to the interface maintain the stacking 299 Introducing Ohmic Contacts into Silicon Carbide ... Extinct Vanadium-49 in Presolar Silicon Carbide Grains from Supernovae, Astrophys J., Vol 576, No 1, pp L69-L72 Hoppe, P., & Ott, U (1997) Mainstream silicon carbide grains from meteorites, In: ... structure and relating it to device properties, revealing, in this way, physics origin of contact issues in SiC electronics In addition to determining atomic structure of 4H-SiC/Ti3SiC2 interface, the...

Ngày tải lên: 19/06/2014, 11:20