... Printing 37 2.4.5 Inkjet Printing 39 CHAPTER INDIUM- TIN- OXIDE (ITO) SUBSTRATE SURFACE TREATMENT 52 3.1 Introduction 52 3.1.1 Introduction to Surface Wettability 53 3.1.2 Review of Surface Treatment ... Modified ITO Substrates 73 3.3.2 Contact Angle Hysteresis of Modified ITO Substrates 79 3.3.3 Ageing Effect of Modified ITO Surface Wettability 81 3.4 Conclusion 83 CHAPTER INKJET PRINTING: FABRICATION ... light-emitting diode (OLED) devices Three areas of work related to OLED and inkjet printing were performed and addressed as follows Firstly, surface wettability and surface degradation of indium- tin- oxide...
Ngày tải lên: 11/09/2015, 10:17
... components The use of electromagnet has wide flexibility of tuning the plasma to get the best operating conditions The use of electromagnet (instead of permanent magnets) helps one to investigate ... calculation was also performed analytically (Montgomery 1966) using standard relations for calculating magnetic field Design, fabrication, and characterization of a solenoid system 463 Table The ... fabricated from 10 mm thick low carbon TATA ‘A’ grade steel The jacket was fabricated in five parts consisting of two side plates and three cylindrical shapes, of diameter equal to the Figure The optimized...
Ngày tải lên: 22/12/2013, 08:58
fabrication and characterization of anodic titanium oxide nanotube arrays of controlled
... whereas making a blank TiO2 film for a NP-DSSC requires multiple coatingssat least two layers of TiO2 NP coating on an expensive TCO substrate Furthermore, calcination of the NT/Ti anode at a high ... 50 °C for h to absorb sufficient N3 dye for light harvesting; the N3/ATO films served as a working electrode (anode) A fluorine-doped tin oxide (FTO; Figure (a) Absorption spectra of ATO films sensitized ... respectively The two-step treatments of the ATO films with TiCl4 clearly formed compact TiO2 nanoparticles on the inner and outer surfaces of the NT so as to increase the surface area for dye adsorption...
Ngày tải lên: 19/03/2014, 16:48
Báo cáo hóa học: " Fabrication and characterization of carbon-based counter electrodes prepared by electrophoretic deposition for dye-sensitized solar cells" doc
... the substrates Finally, the deposited graphene-SWNT Page of Figure FE-SEM images (a) Graphene-deposited FTO substrate (b) SWNT-deposited FTO substrate (c) Graphene-SWNT compositedeposited FTO substrate ... solution was prepared to deposit the graphenes, SWNTs, and carbon composites on fluorine-doped tin oxide [FTO] substrates Chemically converted graphenes, SWNTs, magnesium nitrate, and ethanol were mixed ... The FTO glass (7 Ω·cm-2) and a stainless steel substrate were then immersed in the EPD solution The distance between the FTO and the stainless steel substrate was kept at cm, and a voltage of 30...
Ngày tải lên: 20/06/2014, 23:20
báo cáo hóa học:" Fabrication and characterization of well-aligned and ultra-sharp silicon nanotip array" ppt
... into a buffer oxide etch [BOE] (NH4F/HF = 6:1) solution to fully remove the silicon oxide Fabrication of oxide- capped nanotip The schematic representation of fabrication steps of the oxide- capped ... was then spin-coated onto the surface To match the height of the nanotip, we tuned the rotation rate of the spin coating to decrease the PR thickness After PR coating, the samples were immersed ... the current noise from environmental disturbance, an oxide- capped nanotip was also fabricated The oxide- capped nanotip exhibits a silicon oxide film capped on the sidewall of the tip, while only...
Ngày tải lên: 21/06/2014, 17:20
Design, fabrication and characterization of thin film materials for heterojunction silicon wafer solar cells
... consisting of alternating layers of n-doped microcrystalline Si films and Al-doped zinc oxide TCO films are utilized Figure 1.7 Schematic of a hybrid heterojunction silicon solar cell (adopting ... roughened surfaces [55], periodic gratings [56-59] and distributed Bragg reflectors (DBR) There are several publications involving Bragg reflectors using at least one insulating or moderately conducting ... wafer In the case shown here, DBR unit blocks consisting of alternating layers of n-doped microcrystalline silicon films and Al-doped zinc oxide TCO films are utilized 26 Figure 2.5 Schematic...
Ngày tải lên: 09/09/2015, 11:15
Fabrication and characterization of advanced ALGaNGaN high electron mobility transistors
... employed techniques for passivating AlGaN/GaN HEMTs: (1) surface passivation /treatment is to reduce surface traps on the GaN or AlGaN surface by using various treatment methods (e.g in situ VA ... dielectric stacks on GaN surface This novel in situ surface passivation technique comprises vacuum anneal for desorption of contaminants on the GaN surface, followed by a surface treatment in a multi-chamber ... AlGaN/GaN structure grown on Si substrate [36] 13 Fig 2.1 Schematic diagram illustrating two approaches for passivating AlGaN/GaN HEMTs: surface passivation /treatment and device passivation...
Ngày tải lên: 10/09/2015, 09:11
Fabrication and characterization of germanium photodetectors
... p-type silicon substrate 45 Fig 3.3: Micro-Raman spectroscopy on Ge films selectively grown on different buffer layers on Si(001) substrate compared to bulk Ge substrate SEG Ge ... known to be efficient in generating atomic hydrogen radicals (a) Cap Layer 136 nm Ge Layer Buffer Layer Si Substrate 20nm (b) Si0.78Ge0.22 buffer Epi Si nm p-Si substrate 5nm Fig 2.1: (a) HR-TEM ... Fig 5.4: Arrhenius plot of dark current for lateral PIN Ge photodiodes on SOI substrates Selective epitaxial Ge on SOI substrate shows trap assisted tunneling due to Shockley-Hall-Read (SHR) process...
Ngày tải lên: 10/09/2015, 15:47
Fabrication and characterization of composite membranes for gas separation
... coating; (2) after coating…………….……………189 Fig 8.11 Outer surface morphology of the hollow fibers with and without pxylenediamine/methanol treatment: (A) without p-ylenediamine/methanol solution treatment ... selectivities for Carbon dioxide and Methane separation, resulting in efficient removal of Carbon dioxide The Carbon dioxide removal membrane systems in Texas, Argentina, Indonesia and natural ... supplement method to heat treatment and coating in removing the polymer/zeolite interface defects of the mixed matrix structure Comparison between fibers with both soaking and thermal treatment and those...
Ngày tải lên: 12/09/2015, 11:24
Fabrication and characterization of luminescent silicon nanocrystal films
... by a high-quality oxide Therefore, it is clear that (SiH2)x surface species is only one of a number of possible luminescent mechanisms 1.2.2 Surface states or defects In the surface state models, ... the existing Si processing technology On the other hand, fabricating size- and surface- controlled Si nanostructures with reproducibility could be critical due to the sensitive light-emitting properties ... pulse a fresh surface The substrates were cleaned with acetone and ethanol ultrasonic baths before deposition The substrates were not heated or cooled during deposition The target-to -substrate distance...
Ngày tải lên: 12/09/2015, 11:25
Fabrication and characterization of memory devices based on organic polymer materials
... floating gate, and is also called nano-floating gate memory (NFGM) Instead of injecting charges in the floating gate, charges are trapped in the silicon nanocrystals that act as nano-floating ... electrodes on a substrate (plastic, wafer, glass or metal foil) (Fig 1.8) The configuration of electrodes can be symmetric or asymmetric, with Al, Au, Cu, p- or n-doped Si and indium- tin oxide (ITO) as ... evaporation, spin-coating, ink-jet printing, self-assembly (SAM), Langmuir-Blodgett (LB) film formation, electrostatic self-assembly (ESA), template-directed assembly, surface grafting, and other...
Ngày tải lên: 12/09/2015, 11:29
Fabrication and characterization of nanostructured half metals and diluted magnetic semiconductors
... ferromagnetic layers are separated by an ultrathin insulating material such as Chapter Introduction and literature survey aluminium oxide (Al2O3) or magnesium oxide (MgO) instead of nonmagnetic metals in ... find higher spin-polarized conducting ferromagnetic materials, in ideal case with 100% spin polarization, for which only one spin channel is available at the Fermi surface and all the currents must ... properties at surface boundary of a half-metallic ferromagnet La0.7Sr0.3MnO3”, Phys Rev Lett 81, pp 1953-1956, 1998 19 J M D Coey, J J Verslujis, and M Veenkatesan, “Half-metallic oxide point contacts”,...
Ngày tải lên: 12/09/2015, 11:29
Fabrication and characterization of the ultrafiltration and nanofiltration membranes
... asymmetric substrate by following methods: • Coating • In-situ polymerization • Interfacial polymerization • Plasma polymerization • Radiation induced grafting • Surface modification Except for surface ... adjusting the pH and the temperature of broth, removing water and inorganic salts by using hydrophilic NF membranes, concentrating the solution to near the maximum solubility, then extracting ... surface coating (dip, spray or spin coating), all these modification approaches involve polymerisation reactions which generate new materials as a very thin layer on the original membrane surface...
Ngày tải lên: 12/09/2015, 11:29
Fabrication and characterization of AIGaN gan HEMTs
... depths of: (a) Group (solid line) - only surface treatment, approx 2nm from the surface; (b) Group (double solid lines) - approximately 18nm from the surface and is targeted to reach the Si-doped ... inertness to many chemical etches The surface chemistry of AlN was investigated by Slack and McNelly [60] and it indicated that the AlN surface grows and oxide 50-100 Å thick when exposed to ambient ... picture for some limiting cases The simplest cases are illustrated in Figure 2.6a, representing an infinite square well (e.g (AlGaN/GaN/AlGaN heterostructure), and 2.6b, representing a triangular...
Ngày tải lên: 05/10/2015, 22:32
Fabrication and characterization of lateral spin valves
... 38 Figure 3.16 (a) Uniform deposited film thickness resulting from conformal deposition (b) Non-uniform deposited film thickness resulting from non-conformal deposition 39 Figure 3.17 Breakage ... heterostructures is the difficulty in integrating them with other devices for future spintronic applications due to the physical constraints in fabricating multi-terminal devices for these vertical ... improved since the Au capping prevents oxidation of the Cu surface The decrease in spin signal is a result of the small spin-flip resistance originating from the short spin diffusion length of the Au...
Ngày tải lên: 05/10/2015, 22:32
Fabrication and characterization of photonic crystals
... perpendicular to the surfaces of the substrate The ccp structure can also be described as a face-centered cubic (fcc) lattice with the (111) face parallel to the surfaces of the substrate The crack ... pre-heating treatment on the photonic bandgap properties of colloidal photonic crystals The last one is to fabricate surfactant-assisted TiO2 photonic crystals using colloidal crystal templating ... opal film on a flat substrate For a coated suspension on a hydrophobic substrate, opal film will shrink during the evaporation due to the moving contact line If a hydrophilic substrate is used,...
Ngày tải lên: 05/10/2015, 22:32
Fabrication and characterization of planar hall devices
... describes the behavior of materials that have alternating layers of ferromagnetic and nonmagnetic materials deposited on a non – conducting substrate Giant magnetoresistance effect can be observed ... eutectic or compound) by heating it to sufficiently high temperatures and reconsidering it onto a cooler substrate to form a thin film [5] As the name implies, the heating is carried out by passing ... multilayer structures on Si (100) substrate Because there is a lateral distance between the crystal detector used for insitu monitoring of the deposited films and the substrate, it is necessary to...
Ngày tải lên: 05/10/2015, 22:32
Fabrication and characterization of tunneling field effect transistors (TFETs)
... through a capacitor fabrication experiment A two-mask capacitor run was used The active area pattern was defined by photolithography on test wafers with 400 nm of field oxide Buffered oxide etch ... with dopant diffusion inhibitor might help in reducing dopant diffusion For example, carbon could inhibit boron diffusion in Si substrate and is a dopant diffusion inhibitor [2.5] The total thermal ... high-κ metal gate capacitors Fitting of a simulated C-V curve which accounted for quantum mechanical effects to an experimental curve was carried out to obtain the Equivalent Oxide thickness (EOT)...
Ngày tải lên: 06/10/2015, 20:36