electronic devices and circuit theory boylestad ppt

... Trang 1Online Instructor’s Manual for Electronic Devices and Circuit Theory Eleventh Edition Robert L Boylestad Louis Nashelsky Trang 2Copyright 2013 Pearson Education, ... the 5 V supply and the diode is “on” Using the short-circuit equivalent for the diode we find v o = v i = 20 V For v i = 5 V, both v i and the 5 V supply reverse-bias the diode and separate ... input terminals, assume Si diode “off” and Ge diode “on” Trang 21 For v i  1.4 V Si diode is “on” and vo = 0.7 V For v i < 1.4 V Si diode is open and level of v o is determined by voltage

Ngày tải lên: 21/11/2019, 17:12

... for Laboratory Manual to accompany Electronic Devices and Circuit Theory Eleventh Edition Prepared by Franz J Monssen Trang 3EXPERIMENT 1: OSCILLOSCOPE AND FUNCTION GENERATOR OPERATIONS Part ... consists of the parallel combination of a 1 Meg resistance and a 30pf capacitor n measuring device which reduces loading of scope on a circuit and effectively increases input impedance of scope by ... selects unit of time/screen division on x-axis g allows for ac or dc coupling of signal to scope and at GND position; establishes ground reference on screen h locates the trace if it is off screen

Ngày tải lên: 28/08/2021, 13:51

... betweenprice-level and output changes over 1929-1935 The countries with the biggest deflations andoutput contractions include France, Switzerland, Belgium, the Netherlands, and Poland, all ofwhich ... as France and Switzerland that stuck with the gold standard longer had greater declines in price levels and output. Source: Ben Bernanke and Kevin Carey, "Nominal Wage Stickiness and Aggregate ... Eichengreen and Marc Flandreau, eds The Gold Standard in Theory and History Second edition London: Routledge, 1997 A valuable collection of readings on the performance of the gold standard in different

Ngày tải lên: 14/12/2013, 15:15

... relation between value maximisationand stakeholder theory I call it enlightened value maximisation, and it is identical towhat I call enlightened stakeholder theory Enlightened value maximisation ... role of the corporate objective function in corporateproductivityand efficiency, social welfare, and the accountabilityof managers anddirectors I argue that since it is logicallyimpossible to maximise ... valued objective function Twohundred years of work in economics and finance implies that in the absence ofexternalities and monopoly(and when all goods are priced), social welfare ismaximised when

Ngày tải lên: 24/01/2014, 04:20

... Trang 1Information Management Resource KitModule on Management of Electronic Documents UNIT 2 FORMATS FOR ELECTRONIC DOCUMENTS AND IMAGES LESSON 5 DESCRIPTIVE MARK-UP: XML NOTE Please note that ... environment, and use the PDF version for printing the lesson and to use as a reference after you have completed the course Trang 2At the end of this lesson, you will be able to:• understand the features ... features of descriptive mark-up; • understand the structure of a well formed XML document; • understand the structure of a Document Type Definition (DTD) and XML Schema; • distinguish when an XML

Ngày tải lên: 24/03/2014, 03:20

... (XSLT) offers a standard way to transform XML and there are many XSLT transformation processors available, both as open source and as commercial products There is also a standard way to transform ... and use the PDF version for printing the lesson and to use as a reference after you have completed the course Trang 2At the end of this lesson, you will be able to: • choose among different electronic ... on the browser as well as to download and print it Therefore, she has to convert the documents from Word to HTML and PDF formats What is needed to do this? And how is it done? Before proceeding,

Ngày tải lên: 24/03/2014, 03:20

... countenance The eyes were lifeless, and lustreless, and seemingly pupil-less, and I shrank involuntarily from [them] to the thin and shrunken lips They parted; and in a smile of peculiar meaning, ... destructive and tied to a primitive, frenzied desire to possess the Object, and to see the animate return to the state of the inanimate.10 And, in the service of this desire is (1) Poe’s (and Usher’s) theory ... health and beauty to disease and hideousness (The same inversion appears in “Morella” where “the most beautiful [becomes] the most hideous,” and, in somewhat varied form, in “Ligeia” and in “Usher”)

Ngày tải lên: 30/03/2014, 16:20

... MATERIALS, PROCESSING AND APPLICATIONS IN ELECTRONIC DEVICES Edited by Moumita Mukherjee Trang 2Silicon Carbide - Materials, Processing and Applications in Electronic Devices Edited by Moumita ... physical and chemical properties make silicon carbide (SiC) a prominent candidate for a variety of applications, including high-temperature, high-power, and high-frequency and optoelectronic devices, ... Method 309 Piotr Klimczyk Part 2 Silicon Carbide: Electronic Devices and Applications 335 Chapter 14 SiC Devices on Different Polytypes: Prospects and Challenges 337 Moumita Mukherjee Chapter

Ngày tải lên: 19/06/2014, 11:20

... deposition (c) valenceband spectra deduced from XPS spectroscopy and (d) Raman band spectra showing silicon-and carbon-rich local phases To guide the eye, the Raman modes and their symmetries in ... indirect band gap material The Γ25−Γ15transition is at 3.5 eV and the indirect band gap at 1.17 eV As in carbon polytypism in hexagonal phase is also reported (combining eclipsed and staggered ... between clathrate and graphite (the most stable) phase operates Severalauthors mentioned the Si clathrate potentiality for applications in optoelectronic devices First of all, the wide band gap opening

Ngày tải lên: 19/06/2014, 11:20

... 2001; Colomban, 2003; idem, 2005) and that Raman peaks are narrower that IR bands (Gouadec & Colomban, 2007 and references herein) Fig 2a shows the representative electronic diffraction pattern ... bonds) and graphite (in plane sp2 C=C bond) have sharp stretching mode peaks at 1331 and 1581 cm-1 respectively The two main bands of amorphous carbons are then assigned to diamond-like (D band ... components below 1300 cm-1 arise from hydrogenated carbons and those intermediate between D and G bands have been assigned to oxidised and special carbon phases (Karlin & Colomban, 1997; idem,

Ngày tải lên: 19/06/2014, 11:20

... pores in the waferinterior (c) Sketch of the inclusion and the pores 200 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Trang 3Micropipe Reactions in Bulk SiC Growth ... equal andvery small,β xz=β yz=5×10−4, and the inclusion contains only one micropipe at thecorner (b) The inclusion plastic distortion components are equal and very large, β xz =β yz=0.05, and the ... and Applications in Electronic Devices Trang 99 Thermal Oxidation of Silicon Carbide (SiC) – Experimentally Observed Facts Sanjeev Kumar Gupta and Jamil Akhtar Central Electronics Engineering

Ngày tải lên: 19/06/2014, 11:20

... make use both of the ELF and the Wannier orbitals and centers to quantify electron localization. 242 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Creation of Ordered ... Materials, Processing and Applications in Electronic Devices Will-be-set-by -IN- TECH Fig 5 Snapshot of the SiC-2×2 surface Pink and grey spheres represent carbon and silicon atoms,... ... Materials, Processing and Applications in Electronic Devices Creation of Ordered Layers on Semiconductor Surfaces: An ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2)

Ngày tải lên: 19/06/2014, 11:20

... the mechanism and the increasing needs for better device design and performance control, understanding the underlying formation origin is timely and relevant To develop an understanding of the ... geometries of the 96 candidate interfaces, and determine the structure, electronic states, local bonding, and nonequilibrium quantum transport of the interface We provide disscussion and concluding ... photometry of M, S and C-stars, Astron Astrophys., Vol 21, p 239 Heck, P R (2005) Helium and neon in presolar silicon carbide grains and in relict chromite grains from fossil meteorites and micrometeorites

Ngày tải lên: 19/06/2014, 11:20

... found to be of metallic nature both in experiment and theory, the contact between Ti3SiC2 and its covered metals should show Ohmic character and thus the SiC/Ti3SiC2 interface should play a significant ... structure and better control of Ohmic property To summarize, we have determined in this chapter atomic-scale structure of Ohmic contacts on SiC and related it to electronic structure and electric ... technological improvement of contacts in SiC devices, and this chapter presents an important step towards addressing the current contact issues in wide-band-gap electronics 5 Acknowledgment We thank

Ngày tải lên: 19/06/2014, 11:20

... solid state devices for generation of microwave and mm wave power. Silicon Carbide – Materials, Processing and Applications in Electronic Devices 340 To understand the operation and performance ... Processing and Applications in Electronic Devices 342 a result, it collides with bound electron in the valence band and excites them into the conduction band, creating an e-h pair and the phenomenon ... region E1 and P1 are un-illuminated diodes and E2,3 and P2,3 are illuminated TM (2) and FC (3) diodes SiC Devices on Different Polytypes: Prospects and Challenges...SiC Devices on

Ngày tải lên: 19/06/2014, 11:20

... states and the localized atomic C 2s states, whereas the higher subband also consists of Si 3p and 2p states In the higher subband the Si 3s and C 2p states dominate at lower energies and the ... Processing and Applications in Electronic Devices 4.2 Physical deposition processes: Magnetron sputtering and co-sputtering techniques The physical deposition process comprise the physical sputtering and ... where l labels the sublayers, b and b refer to the atomic basis within a sublayer, and α and β bb are atomiclike orbitals Given the Eαβ ’s (bulk band structure) and the Rl ’s (SL geometry), bb

Ngày tải lên: 19/06/2014, 11:20

... areas (which may correspond simultaneously to elevated T a and P d), are wanted The aims are mass, volume, and cost savings and higher T j devices are required The recent silicon carbide components ... power and low voltage ratings Such metallized ceramic substrates allow the electrical interconnection between the dies soldered on them and with the external circuit Besides their mechanical and ... ‘sandwich’ structures, has to be filled with an insulating material Its role is to avoid premature electric breakdown and partial discharges, and to protect all the system against humidity and

Ngày tải lên: 19/06/2014, 11:20

... silicon carbide, and 468 Silicon Carbide – Materials, Processing and Applications in Electronic Devices. .. Processing and Applications in Electronic Devices Again, ... filler and matrix materials so far in the literature regarding economical and functional benefits to both consumers and industrial manufacturers (Budinski, 1997; Chand et al., 2000; Tripathy and ... Materials, Processing and Applications in Electronic Devices 452 Conner, I & and Hashish, M. (2003). Abrasive water jet machining of aerospace structural sheet and thin plate materials.

Ngày tải lên: 19/06/2014, 11:20

... power devices, IEEE Transactions on Electronics Devices, Vol 40, Iss 3, pp 645-655 [5] Boylestad, R L & Nashelsky, L (1999) Electronic Devices and Circuit Theory, 7th Edition, Prentice Hall ... similarity between the allotropic forms of carbon and boron nitride (hexagonal BN and graphite, cubic BN and diamond), and the fact that B-N pairs are isoelectronic to C-C pairs, was the basis for predictions ... & Tolbert, L M (2005) High-temperature and high-frequency performance evaluation of 4H-SiC unipolar power devices, Applied Power Electronics Conference and Exposition 2005, Twentieth Annual IEEE,

Ngày tải lên: 19/06/2014, 11:20