eld effect transistors and monolithic microwave integrated circuits

... into microwave and millimeter-wave regions Applications include, for example, very small aperture terminal (VSAT) satellite communications at X-band and Ka-band, automotive radar at 24 GHz and ... Cell,” IEEE Transactions on Circuits and Systems I: Regular Papers, vol 57, no 10, pp 2609–2617, October 2010 • Y Chen, K Mouthaan, and F Lin, “Design of X-Band and Ka-Band Colpitts Oscillators ... Terminal VSWR Voltage Standing Wave Ratio xxi CHAPTER Introduction 1.1 Background Radio-frequency integrated circuits (RFICs) are now essential and critical in both mobile and fixed wireless communication...

Ngày tải lên: 10/09/2015, 15:51

... The energy band alignment between Ge and In0.53Ga0.47As is illustrated, showing the conduction band offset of 0.2 ± 0.1 eV and valence band offset of 0.5 ± 0.1 eV The bandgap narrowing effect due ... electric field and EG is the bandgap A  and B  , where 18 2q GBTBT  A ħ is the reduced Planck’s constant, and mr is the reduced tunneling mass mr is related to the electron effective mass me* and ... current and the operation frequency of an integrated circuit (IC) increase To reduce the power consumption, supply voltage VDD needs to be lowered Tunneling field -effect transistors (TFETs) and high-mobility...

Ngày tải lên: 10/09/2015, 09:01

Ngày tải lên: 01/04/2014, 11:21

... and low insertion loss, but it is bulky and requires precision machining Microstrip line is the most commonly used in microwave integrated circuits (MIC) and monolithic microwave integrated circuits ... input and output lines, and so on These circuits give various applications It is believed that the variations and applications of ring circuits have not yet been exhausted and many new circuits ... Introduction Dual-Mode Ring Bandpass Filters Ring Bandstop Filters Compact, Low Insertion Loss, Sharp Rejection, and Wideband Bandpass Filters Ring Slow-Wave Bandpass Filters Ring Bandpass Filters with...

Ngày tải lên: 27/06/2014, 14:20

... straightforward and provides reasonably accurate results for simple circuits at low frequencies The method lends itself to CAD implementation, and circuits loaded with solidstate devices and discontinuities ... MTT-S Int Microwave Symp Dig., pp 338341, 1982 [12] L.-H Hsieh and K Chang, Equivalent lumped elements G, L, C, and unloaded Qs of closed- and open-loop ring resonators, IEEE Trans Microwave ... methods, IEEE Trans Microwave Theory and Tech., Vol MTT-19, pp 1925, January 1971 [37] M Kirschning and R H Jansen, Accurate model for effective dielectric constant of microstrip and validity up...

Ngày tải lên: 08/08/2014, 01:21

... microwave integrated circuits (MIC) and monolithic microwave integrated circuits (MMIC) The center conductor and ground planes are on the same side of the substrate to allow easy series and shunt connections ... varactor—ring circuits will be the result of a trial -and- error process Trialand-error design methods are time-consuming and would make the varactor-tuned ring less likely to be used Microwave Ring Circuits ... uniplanar ring structure could support both cosine and sine solutions For feed lines located at 0° and 180°, the maximum E- eld points are at 0° and 180°, and only the cosine mode satisfies the boundary...

Ngày tải lên: 08/08/2014, 01:21

... cathode and anode of the varactor At microwave frequencies the capacitance will appear as a short and have very little effect For low frequency, however, the capacitance appears as an open circuit and ... modes (n = and n = 4), this condition is satisfied with or without the gap and the fields are not disturbed In the odd modes (n = and n = 3), the boundary conditions cannot be satisfied and therefore ... MTT-S Int Microwave Symp Dig., pp 411–414, June 1986 [3] K Chang, T S Martin, F Wang, and J L Klein, “On the study of microstrip ring and varactor-tuned ring circuits, ” IEEE Trans Microwave Theory...

Ngày tải lên: 08/08/2014, 01:21

... le and lo can be determined from Equations (6.17) and (6.18) The parameters Z11 and Z12 can be determined by substituting Equations (6.17) and (6.18) into Equations (6.15) and (6.16) to yield ... wideband microstrip bandpass filter This bandpass filter is developed from the bandstop filter introduced in Section 7.3 [13] Two tuning stubs are added to the bandstop filter to create a wide passband ... 7.16, the dual-mode effects or transmission zeros increase the stopband bandwidth and improve the return loss in the edges of the passband The filter has 3-dB fractional bandwidth of 51.6%, an...

Ngày tải lên: 08/08/2014, 01:21

... Proc 20th Eur Microwave Conf., pp 901–906, September 1990 L -H Hsieh and K Chang, “Compact, low insertion loss, sharp rejection and wideband microstrip bandpass filters,” IEEE Trans Microwave Theory ... 1991, p 321 L Zhu, H Bu, and K Wu, “Broadband and compact multi-pole microstrip bandpass filters using ground plane aperture technique,” IEE Proceedings, Microwaves, Antennas and Propagation, Vol ... photonic-bandgap (UC-PBG) structure and its applications for microwave circuits, ” IEEE Trans Microwave Theory Tech., Vol 47, No 8, pp 1509–1514, August 1999 [24] H C Bell, “Narrow bandstop filters,”...

Ngày tải lên: 08/08/2014, 01:21

... planar microwave integrated circuits As mentioned before, the uniplanar microwave integrated circuits not use the backside of the substrate, and allow easy series and shunt connections of passive and ... “New broad-band matched hybrids for microwave integrated circuits, ” in 1971 Proc European Microwave Conf., pp C4/5–C4/5:4, 1971 [41] L Fan, C.-H Ho, S Karamaluru, and K Chang, “Wide-band reduced-size ... structure, and ease of integrating with solid-state devices, the uniplanar CPW magic-T should have many applications in microwave and millimeter-wave hybrid and monolithic integrated circuits CPW...

Ngày tải lên: 08/08/2014, 01:21

... [2] R G Manton, “Hybrid networks and their uses in radio-frequency circuits, ” Radio Electron Eng., Vol 54, pp 473–489, June 1984 [3] K Chang, Handbook of Microwave and Optical Components, Vol 1, ... impedance-matched wideband balun and magic-T,” IEEE Trans Microwave Theory Tech., Vol MTT-24, pp 135–141, March 1976 [8] M Aikawa and H Ogawa, “A new MIC magic-T using coupled slot lines,” IEEE Trans Microwave ... MTT-S Int Microwave Conf Dig., pp 1175–1178, 1992 [12] C Ho, L Fan, and K Chang, “Slotline annular ring elements and their applications to resonator, filter and coupler design,” IEEE Trans Microwave...

Ngày tải lên: 08/08/2014, 01:21

... the far- eld radiation patterns and the input impedance at the feed point can be calculated Using the standard spherical coordinates r, q, and f to refer to the point at which the eld are measured, ... Miller and K Chang, Integrated active antenna using annular ring microstrip antenna and Gunn diode,” Microwave Opt Technol Lett., Vol 4, No 2, pp 72–75, January 1991 [25] K A Hummer and K Chang, ... arrive in phase at ports and 3, and 180° out of phase at port Therefore, ports and are isolated Similarly, a wave incident at port is divided equally and coupled to ports and The two component waves...

Ngày tải lên: 08/08/2014, 01:21

... Booton, Jr MICROWAVE RING CIRCUITS AND ANTENNAS • Kai Chang MICROWAVE SOLID-STATE CIRCUITS AND APPLICATIONS • Kai Chang RF AND MICROWAVE WIRELESS SYSTEMS • Kai Chang RF AND MICROWAVE CIRCUIT AND COMPONENT ... Inder Bahl, and Vijay Nair MICROWAVE RING CIRCUITS AND RELATED STRUCTURES, Second Edition • Kai Chang and Lung-Hwa Hsieh DIODE LASERS AND PHOTONIC INTEGRATED CIRCUITS • Larry Coldren and Scott ... Gabriel D Colef, and Raymond L Camisa MILLIMETER WAVE OPTICAL DIELECTRIC INTEGRATED GUIDES AND CIRCUITS • Shiban K Koul MICROWAVE DEVICES, CIRCUITS AND THEIR INTERACTION • Charles A Lee and G Conrad...

Ngày tải lên: 08/08/2014, 01:21

Ngày tải lên: 24/08/2014, 17:05

... Organic field -effect transistors (OFETs) The principle of the field -effect transistor (FET) was first proposed by Lilienfeld in 193026 but it was not until the 1980s where organic field -effect transistors ... & Ando, T Field -effect transistor with polythiophene thin film Synth Met 18, 699-704 (1987) 28 Tsumura, A., Koezuka, H & Ando, T Polythiophene field -effect transistor: Its characteristics and ... rr-P3HT and PBTTT, and the general mechanism and electrical characteristics of an organic field -effect transistor (OFET) Then a brief review of the known ix ambient stability of these materials, and...

Ngày tải lên: 10/09/2015, 08:34

... concentration Na and donor concentration Nd) along B-B’ in (b) (e) Band diagram illustrating the band-to-band tunneling of electrons along A-A’ in (a) (f) Band diagram illustrating the band-toband tunneling ... and f c (E ) are the Fermi-Dirac distribution functions, and g c (E ) and g v (E ) are the density-of-states in the conduction band and the valence band, respectively According to Eqs (1.2) and ... (a) VGS = V and VDS = V, (b) VGS = V and VDS = V, and (c) VGS = VDS = V 26 Fig 2.5 (a) and (b) show CGD and CGS as functions of VGS with various VDS, respectively (c) CGD, CGS and CGG versus...

Ngày tải lên: 10/09/2015, 09:24

... the field of wide bandgap compound semiconductor materials and devices [Pearton1999, Jain 2000] 1.2 AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) The heterostructure field effect ... with GaN, and the overlayer of amorphous SiO2 could, on the other hand, help withstand the higher field and reduce the gate leakage It was reported that transistors with 1-µm length gate and fabricated ... field effect transistor MIS metal-insulator-semiconductor MOCVD metal organic chemical vapor deposition MODFET modulation doped field effect transistor MOSFET metal-oxide-semiconductor field effect...

Ngày tải lên: 11/09/2015, 10:05