desorption ionization on silicon dios

... examinations with transmission electron microscopy (TEM) con®rmed that the loose material was SiNWs Results and discussion It was found that the ambient pressure had an important e€ect on the yield ... keeps on transporting SiO vapor to the deposition location, the ambient pressure would thus have a lesser e€ect on the partial pressure of the SiO vapor at both the evaporation and the deposition ... lower evaporation rate of SiO at the source and the lower di€usion coecient in the transportation of vapor from source to deposition site The parameters Pe and Vm are decided only by the temperature...

Ngày tải lên: 16/03/2014, 15:05

... put on the holey carbon copper grids for transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) examination TEM image (Fig 2c) shows a dark particle capping the nanowire Silicon ... disproportionate at the particle surface into Si and SiO2 Silicon will dissolve in the Au particle, while the silicon oxide will remain at the particle surface When the Si concentration in the ... grew along Æ1 1æ direction, the dominant growth direction of SiNWs was Æ1 2æ with Æ1 0æ being the second dominant direction, the same as the SiNWs grown by the OAG method The Æ1 2æ direction is...

Ngày tải lên: 16/03/2014, 15:06

... separate electron and hole injection The sample configuration, contact geometry and charge distribution are demonstrated in Fig The preparation started from an SOI wafer with a silicon film thickness ... doping concentration in the semiconductor bulk Using Eq (1) in Poisson’s equation, and the materials parameters from Ref [10] as mentioned in Fig 2, the shape of the conduction band is demonstrated ... Schottky contacts on the end surfaces of silicon wires were prepared on SOI material by electron beam lithography By using the substrate as a back-gate, the potential distribution along the wire...

Ngày tải lên: 16/03/2014, 15:14

... discussion Top view SEM image of the SiNWs grew on the silicon substrate is shown in Fig A large quantity of long and thick SiNWs (trunk SiNWs) were observed on the surface of the silicon wafer ... the peak should contribute to the thin SiOx sheath out of the silicon nano-wire and the defects which are contained among the silicon nano-wire This work was supported by the National Natural Science ... tiny wires were mainly composed of silicon core and a small quantity of silicon oxide sheath Detailed analysis Fig Top view SEM image of the SiNWs grew on the silicon substrate (the part of Au nanoparticles...

Ngày tải lên: 16/03/2014, 15:22

... of PQ adsorbed on Si(0 1) In summary, we presented here a novel approach to form 1D organic structures based on the adsorption of organic molecules on silicon nanowires We demonstrated that carefully ... formation a 2D surface Si–Ag alloy, as in the case of Si adsorbed on Cu(1 0) [12] Furthermore, the long-range point -on- line coincidence observed between the THAP and Ag lattices on the THAPon-clean-metal ... corresponds to the direction of the SiNWs Furthermore, from this image one can notice that the molecular aggregates are exclusively adsorbed on top of the SiNWs This observation is even clearer on...

Ngày tải lên: 16/03/2014, 15:35

... DLC-coated tip on a silicon substrate Experiment The silicon surface selected was polished single crystal p-type Si(100) Before scratching, the sample was cleaned thoroughly by sonication in acetone and ... 1a, the cross-section area increases much faster than the depth Consequently, the nonlinear behavior of the relationship between groove dimension and tip force results from the nonlinear increments ... and uniformly on a Si surface, indicating that AFM-based scratch lithography with a DLC-coated tip could be used to fabricate complex nanostructures on a hard silicon surface Conclusion In the present...

Ngày tải lên: 21/06/2014, 00:20

... typically the case only under high injection conditions, where Auger recombination limits the diffusion length to μm or less The physical principle behind the quantitative determination of doping density ... section of a laser-induced BSF Local highly doped regions are prepared by point wise laser irradiation of a silicon surface which was previously coated by a phosphorous containing passivation layer ... this formation would relax the stress and thus lead to a reduction of the correlation between stress and recombination activity Details on the impact of stress on the recombination activity and...

Ngày tải lên: 21/06/2014, 05:20

... be presently resolved Conclusions This study demonstrated that the deposition of a second silicon layer at the boundary condition of amorphous/ micro-crystalline growth on top of the a-Si:H film ... nm (±30 nm) This deposition is done at the boundary conditions of amorphous and micro-crystalline silicon growth [17,18] CS-AFM experiments are then again conducted on the previously processed ... annealing conditions were identical to the second deposition conditions described above, but without the plasma We noticed some increase in the local currents after the annealing only on the previously...

Ngày tải lên: 21/06/2014, 05:20

... was first grown on top of the GeVS at 580°C Using reflection high-energy electron diffraction (RHEED), we observed a clear (2 4) surface reconstruction, confirming APD-free growth On top of the buffer, ... Herzog, ¨ ¨ U Konig, H von Kanel, Solid State Electron 48, 1317 (2004) ¨ 18 G Isella, J Osmond, M Kummer, R Kaufmann, H von Kanel, Semicond Sci Technol 22, S26 (2007) 19 J Osmond, G Isella, D ... structures and attributed to the saturation of non–radiative recombination channels in the barrier active during carrier diffusion processes [27] In conclusion, we presented the PL behavior of highefficiency...

Ngày tải lên: 21/06/2014, 17:20

... (100) silicon wafer, fabricated 140*150 nm height silicon SWS, SLAR w /silicon nitride of 69.1 nm deposited on silicon wafer and DLAR w/69.1 nm silicon nitride and 56 nm MgF2 deposited on silicon ... silicon nitride deposited on silicon, 69.1 nm silicon nitride and 56 nm MgF2 double layer deposited on silicon and 140–150 nm silicon nitride SWS fabricated on silicon MgF2 ARC n=1.38, t = 560A ... the comparison of the measured reflectivity from a polished silicon wafer with 69.1 nm silicon nitride SLAR coating and fabricated silicon nitride SWS on silicon wafer The flat silicon substrate...

Ngày tải lên: 22/06/2014, 00:20

... conditions Tstd: temperature at standard conditions Rg: growth rate k: rate constant G*: activation free energy g: vector in two-beam condition for TEM diffraction contrast imaging : wavelength d: ... semiconductor alloy exhibits excellent radiation resistance [11] and strong phonon bottleneck effects that slow down hot carrier cooling [17] Moreover, compared to conventional III-V multi-junction ... this on resistive power loss can be reduced by optimization of doping profiles (and hence conductivities) in the semiconductors in relation to dimensional and electrical properties considerations...

Ngày tải lên: 09/09/2015, 08:17

... Introduction and Motivation 1.1 Introduction and Motivation MOS scaling: problems and solutions Silicon (Si) - based microelectronic devices, in particular complementary metaloxide-semiconductor ... illustrating photoemission as a three-step process: (1) Photoionization of electrons with incident photons with energy of hv; (2) Emitted travel to the surface with production of secondaries (shaded) ... suppress IL formation .174  7.2.3.  Effects of different substrate surfaces on IL formation .176  7.2.4.  Discussion on pathways of IL formation .178  8. Summary and Conclusion 179 ...

Ngày tải lên: 09/09/2015, 17:54

... more recently, silicon Silicon carbide crystals are comprised of covalently bonded silicon and carbon atoms, of which their unit cell consists of one carbon atom attached to silicon atoms in a ... on silicon [80-83] The first reported use of silicon carbide as a nucleation layer for GaN on silicon was by Takeuchi et al [80], where they deposited 200 nm of silicon carbide as a nucleation ... quality (based on dislocation density) on nanopatterned silicon substrates was worse than that on flat silicon substrates GaN growth was then done on 50 nm tall nanostructures GaN on 50 nm nanostructures...

Ngày tải lên: 10/09/2015, 09:13

... Scanning-electron-micrographs of (a) silicon nanowires, (b) silicon nanofins and (c) silicon nanowires with elliptical cross-sections, obtained through interference lithography with different conditions ... silicon nanowires will be discussed -6- Chapter Introduction A method to circumvent the orientational control of the silicon nanowires, as well as to achieve precise positioning of the silicon ... aligned silicon nanowire arrays on single-crystal silicon wafers has been reported [25]-[29] In this technique, metal particles were deposited on the silicon wafer, and then the silicon substrates...

Ngày tải lên: 12/09/2015, 11:29

... bonding reaction to pyridine (containing a lone pair of electron and acting as an electron-donor in the surface reaction) on silicon surfaces, which demonstrated the coexistence of dative-bonded ... species on silicon 13 Chapter surfaces The adsorption of water on Si(100)-2×1 attracted much attention as the resulting silicon oxidant in the surface reaction is vital in microelectronic fabrication ... Ying Hui; Wang, Shuai; Dong, Dong; Ang, Siau Gek; Xu, Guo Qin In preparation ix Publications Photo-induced Construction of a Second Covalently Bonded d3 -Acetonitrile Layer on 3-Chloro-1-Propanol...

Ngày tải lên: 14/09/2015, 08:43

... Multi-functional Organic Molecules on Silicon Surfaces 7×7 and Si(100)-2×1, the different binding configuration for acetylethyne bonding on two surfaces would be expected Formation of cumulative ... Multi-functional Organic Molecules on Silicon Surfaces This result is indeed consistent with the formation of a tetra-σ linkage through two [2+2]like cycloaddition reactions These constituent ... cycloaddition reactions of the C=O and C≡C groups with the silicon surfaces This conclusion is further supported by XPS studies On the other hand, considering the feasible [2+2]-like cyloaddition between...

Ngày tải lên: 16/09/2015, 17:13

... electron density on these 58 The Binding of Multi-functional Organic Molecules on Silicon Surfaces carbon atoms upon chemisorption The chemisorption process is expected to destroy the ring π-bond ... Multi-functional Organic Molecules on Silicon Surfaces 1.4eV in the core level for one of the nitrogen atoms confirms its participation in the cycloaddition with reactive sites on Si(111)-7×7, consistent ... Multi-functional Organic Molecules on Silicon Surfaces 3.2 Pyrazine adsorption 3.2.1 High-resolution electron energy loss spectroscopy Figure 3.1 shows the high-resolution electron energy loss...

Ngày tải lên: 16/09/2015, 17:13

... Multi-functional Organic Molecules on Silicon Surfaces additional (non-dipole) excitation mechanisms The major tradeoff is the inherently poorer resolution of electron spectroscopy and the limitation ... resolution might preclude the separation of the vibrational modes in some cases, unique information on the surface interaction can be gathered using EELS in conjunction with symmetry selection rules ... calculations More than ever before, there are increasing usages of calculations among surface scientists for investigating the chemical reactions on silicon surfaces Calculations are serving not only...

Ngày tải lên: 16/09/2015, 17:13

... unsaturated hydrocarbons have been extensively investigated In genernal, the 15 The Binding of Multi-functional Organic Molecules on Silicon Surfaces functionalization of silicon surfaces consists of two ... necessary flexibility in the functionalization and modification of silicon surfaces Benzadehyde and acetophenone containing a conjugated phenyl ring and a carbonyl group may selectively bind to ... chemisorption reactions As the Si(111)-7×7 surface presents seven types of such bonds, different The Binding of Multi-functional Organic Molecules on Silicon Surfaces chemical behaviors are expected One...

Ngày tải lên: 16/09/2015, 17:14

... further chemical modification and functionalization of silicon surfaces 148 The Binding of Multi-functional Organic Molecules on Silicon Surfaces 2791 3075 Physisorption (a) 2884 449 521 693 789 ... region upon chemisorption of benzadehyde-α-d1 strongly supports the conclusion that only the C=O bond directly participates in the covalent binding with the surface 6.2.2 X-ray photoelectron spectroscopy ... binding with the silicon surface The rehybridization of the O and Cα atoms of the carbonyl groups and their bonding to silicon atoms with a much lower electronegativity (Pauling electronegativity...

Ngày tải lên: 16/09/2015, 17:14