basic electronic devices and circuits ppt

... vlan {1-4096, ALL} interfaceinterface-id command Trang 5151 Basic Switch Management • Back up and Restore Switch Configurations Trang 52• Back up and Restore Switch Configurations • Clearing ... designed to support voice, video, and data transmissions • Configure basic security on a switch that will operate in a network designed to support voice, video, and data transmissions Trang 33 ... half-duplex mode Trang 1313 MAC Addressing and Switch MAC Address Tables Trang 1515 MAC Addressing and Switch MAC Address Tables Trang 1717 MAC Addressing and Switch MAC Address Tables Trang

Ngày tải lên: 05/07/2014, 03:20

... demands Power electronics is all about using electronic devices and circuits with storage ement to control the level of voltage and current, either in the form of AC or DC Powerelectronics circuits ... Trang 1Power Electronics: Devices and Circuits5.1 Introduction Power electronics is an enabling technology for all electrical and electronic apparatusrequiring electric ... MOSFET.Trang 21[1] S Ang, and A Oliva, Power-switching converters, CRC Press, 2nd Ed., 2005.[2] N Mohan, T M Undeland, and W P Robbins, Power electronics: converters,applications and devices, John Wiley

Ngày tải lên: 31/07/2014, 14:20

... Trang 1Online Instructor’s Manual for Electronic Devices and Circuit Theory Eleventh Edition Robert L Boylestad Louis Nashelsky Trang 2Copyright ... input terminals, assume Si diode “off” and Ge diode “on” Trang 21 For v i  1.4 V Si diode is “on” and vo = 0.7 V For v i < 1.4 V Si diode is open and level of v o is determined by voltage ... the 5 V supply and the diode is “on” Using the short-circuit equivalent for the diode we find v o = v i = 20 V For v i = 5 V, both v i and the 5 V supply reverse-bias the diode and separate

Ngày tải lên: 21/11/2019, 17:12

... Trang 1NMR and molecular dynamics studies of an autoimmune myelin basic protein peptide and its antagonist calculations Andreas G Tzakos1, Patrick Fuchs2, Nico A J van Nuland2, Anastasios ... various systems comprised 3899 and 4516 SPC molecules for the agonist and the antagonist in water, respectively, and 817 and 927 Me2SO molecules for the agonist and the antagonist, respectively, ... in Me2SO, 98 sequential and medium-range NOEs and two long-range NOEs were used as distance restraints, whereas, in aqueous solution, 116 sequential and medium-range NOEs and two long-medium-range

Ngày tải lên: 07/03/2014, 16:20

... Management handbook Available at http://dlis.dos.state.fl.us/barm/handbooks/basics.pdf, Basics provides an introduction and guide to public records management in Florida for state and local government ... in the Basics handbook apply equally to public records in electronic format While the recommendations in this handbook reflect best practices, they are not meant to define mandatory standards ... applicable laws and rules Trang 7Policies and Procedures Agencies must establish policies and procedures to ensure that electronic records and their documentation are retained and accessible as

Ngày tải lên: 23/03/2014, 23:21

... Trang 1Information Management Resource KitModule on Management of Electronic Documents UNIT 2 FORMATS FOR ELECTRONIC DOCUMENTS AND IMAGES LESSON 5 DESCRIPTIVE MARK-UP: XML NOTE Please note that ... environment, and use the PDF version for printing the lesson and to use as a reference after you have completed the course Trang 2At the end of this lesson, you will be able to:• understand the features ... features of descriptive mark-up; • understand the structure of a well formed XML document; • understand the structure of a Document Type Definition (DTD) and XML Schema; • distinguish when an XML

Ngày tải lên: 24/03/2014, 03:20

... (XSLT) offers a standard way to transform XML and there are many XSLT transformation processors available, both as open source and as commercial products There is also a standard way to transform ... and use the PDF version for printing the lesson and to use as a reference after you have completed the course Trang 2At the end of this lesson, you will be able to: • choose among different electronic ... on the browser as well as to download and print it Therefore, she has to convert the documents from Word to HTML and PDF formats What is needed to do this? And how is it done? Before proceeding,

Ngày tải lên: 24/03/2014, 03:20

... Trang 1BASIC INSTRUMENTATION MEASURING DEVICES AND BASIC PID CONTROL Trang 2Table of Contents Section 1 - OBJECTIVES 3 Section ... power and in-core detectors at high power; Control • identify the controlled and manipulated variables; • sketch a simple block diagram and indicate set point, measurement, error, output and disturbances; ... alarms or automatic control There are a number of standard signals; however, those most common in a CANDU plant are the 4-20 mA electronic signal and the 20-100 kPa pneumatic signal This section

Ngày tải lên: 28/05/2014, 14:12

... SPSLs and Dilute-Nitride Optoelectronic Devices Trang 220 Will-be-set-by-IN-TECHTherefore varying by the number of periods and/or barrier height within a SPSL structure, theposition of the band ... Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by raman spectroscopy, Solid State Electronics 47: 461–465 77 SPSLs and Dilute-Nitride Optoelectronic Devices Trang 1028 Will-be-set-by-IN-TECHWang, ... mouth and gas exchange were recorded breath-by-breath (Vmax 229, Trang 16Optoelectronics – Devices and Applications 84 SensorsMedics) Expired gas was analyzed for oxygenuptake (V'O2), and carbon

Ngày tải lên: 19/06/2014, 11:20

... MATERIALS, PROCESSING AND APPLICATIONS IN ELECTRONIC DEVICES Edited by Moumita Mukherjee Trang 2Silicon Carbide - Materials, Processing and Applications in Electronic Devices Edited by Moumita ... physical and chemical properties make silicon carbide (SiC) a prominent candidate for a variety of applications, including high-temperature, high-power, and high-frequency and optoelectronic devices, ... Method 309 Piotr Klimczyk Part 2 Silicon Carbide: Electronic Devices and Applications 335 Chapter 14 SiC Devices on Different Polytypes: Prospects and Challenges 337 Moumita Mukherjee Chapter

Ngày tải lên: 19/06/2014, 11:20

... deposition (c) valenceband spectra deduced from XPS spectroscopy and (d) Raman band spectra showing silicon-and carbon-rich local phases To guide the eye, the Raman modes and their symmetries in ... indirect band gap material The Γ25−Γ15transition is at 3.5 eV and the indirect band gap at 1.17 eV As in carbon polytypism in hexagonal phase is also reported (combining eclipsed and staggered ... between clathrate and graphite (the most stable) phase operates Severalauthors mentioned the Si clathrate potentiality for applications in optoelectronic devices First of all, the wide band gap opening

Ngày tải lên: 19/06/2014, 11:20

... 2001; Colomban, 2003; idem, 2005) and that Raman peaks are narrower that IR bands (Gouadec & Colomban, 2007 and references herein) Fig 2a shows the representative electronic diffraction pattern ... bonds) and graphite (in plane sp2 C=C bond) have sharp stretching mode peaks at 1331 and 1581 cm-1 respectively The two main bands of amorphous carbons are then assigned to diamond-like (D band ... components below 1300 cm-1 arise from hydrogenated carbons and those intermediate between D and G bands have been assigned to oxidised and special carbon phases (Karlin & Colomban, 1997; idem,

Ngày tải lên: 19/06/2014, 11:20

... pores in the waferinterior (c) Sketch of the inclusion and the pores 200 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Trang 3Micropipe Reactions in Bulk SiC Growth ... equal andvery small,β xz=β yz=5×10−4, and the inclusion contains only one micropipe at thecorner (b) The inclusion plastic distortion components are equal and very large, β xz =β yz=0.05, and the ... and Applications in Electronic Devices Trang 99 Thermal Oxidation of Silicon Carbide (SiC) – Experimentally Observed Facts Sanjeev Kumar Gupta and Jamil Akhtar Central Electronics Engineering

Ngày tải lên: 19/06/2014, 11:20

... snapshots include configurations representing the IS and EQgeometries Blue, green, and white spheres denote Si, C, and H atoms, respectively, and grayspheres indicate the location of Wannier centers ... ion, and | lm  lm |is a projection operator onto each angular momentum component In order to truncate the infinite sum over l in Eq (32), we assume that for some l ≥ ¯l, v l(r) =v ¯l(r)and add and ... use both of the ELF and the Wannier orbitals and centers toquantify electron localization Trang 10(b) 6.2 Å3 Reactions on the 3C-SiC(001)-3×2 surface Silicon-carbide (SiC) and its associated reactions

Ngày tải lên: 19/06/2014, 11:20

... the mechanism and the increasing needs for better device design and performance control, understanding the underlying formation origin is timely and relevant To develop an understanding of the ... geometries of the 96 candidate interfaces, and determine the structure, electronic states, local bonding, and nonequilibrium quantum transport of the interface We provide disscussion and concluding ... photometry of M, S and C-stars, Astron Astrophys., Vol 21, p 239 Heck, P R (2005) Helium and neon in presolar silicon carbide grains and in relict chromite grains from fossil meteorites and micrometeorites

Ngày tải lên: 19/06/2014, 11:20

... structure and better control of Ohmic property To summarize, we have determined in this chapter atomic-scale structure of Ohmic contacts on SiC and related it to electronic structure and electric ... technological improvement of contacts in SiC devices, and this chapter presents an important step towards addressing the current contact issues in wide-band-gap electronics 5 Acknowledgment We thank ... properties at an atomic scale and is not limited to the contacts in SiC electronics Our results show that the main product generated by chemical reaction can be epitaxial and have atomic bonds to

Ngày tải lên: 19/06/2014, 11:20

... solid state devices for generation of microwave and mm wave power. Silicon Carbide – Materials, Processing and Applications in Electronic Devices 340 To understand the operation and performance ... Processing and Applications in Electronic Devices 342 a result, it collides with bound electron in the valence band and excites them into the conduction band, creating an e-h pair and the phenomenon ... region E1 and P1 are un-illuminated diodes and E2,3 and P2,3 are illuminated TM (2) and FC (3) diodes SiC Devices on Different Polytypes: Prospects and Challenges...SiC Devices on

Ngày tải lên: 19/06/2014, 11:20

... (Vandelli, 2008) and in pressure monitoring during deep well drilling and combustion in aeronautical and automobile engines that require sensors to operate at temperatures ranging between 300 and ... conduction bands The TB approach is standard and widely used for the electronicproperties of a wide variety of materials In the present contribution we overview ourmost recent results on the electronic ... superlattices and (ii)the polytypes have an energy band offset between adjacent layers equal to zero by definition We can obtain with our TB model the band structures and particularly the energy band gaps

Ngày tải lên: 19/06/2014, 11:20

... areas (which may correspond simultaneously to elevated T a and P d), are wanted The aims are mass, volume, and cost savings and higher T j devices are required The recent silicon carbide components ... ‘sandwich’ structures, has to be filled with an insulating material Its role is to avoid premature electric breakdown and partial discharges, and to protect all the system against humidity and ... limitation for SiC devices is more likely to be imposed by the high temperature performance and stability of all the die surrounding materials and their related interfaces and by the market need

Ngày tải lên: 19/06/2014, 11:20

... filler and matrix materials so far in the literature regarding economical and functional benefits to both consumers and industrial manufacturers (Budinski, 1997; Chand et al., 2000; Tripathy and ... stand-off distance (D) and the tenth column to erodent size (E), the third and fourth column are assigned to (A×B)1 and (A×B)2 respectively to estimate interaction between impact velocity (A) and ... between the widths at the top and bottom of the slot is small and consequently, the taper angle is also smaller On the other hand, garnet abrasives lose their sharpness and as a result the bottom

Ngày tải lên: 19/06/2014, 11:20