6 quantum well lasers

... hấp thụ 80 80 80 80 60 60 60 60 Ánh sáng  Tăng dòng quang điện  Không gây cản trở dòng DBR IQE Non­DBR IQE DBR reflectivity 40 40 40 40 20 20 0 400 400 20 20 500 500 60 0 60 0 700 700 800 800 ... thay đổi gianh giới giải hấp thụ hấp thụ dải rộng + ) Không gấy sai hỏng,trật khớp có khoảng tử 65 giếng tạo +) Khả thay đổi Eg dẫn tới hiệu suất nối tiếp ,tiếp đôi cao Cải tiến pin chấn tử phân ... từ vao độ rộng L cua hố lượng tử ́ ́ ̣ ̀ ̉ T=280K T=300K 0.8 0.7 he so hap thu phi tuyen 0 .6 0.5 0.4 0.3 0.2 0.1 rong ho luong tu L(m) 10 -8 x 10 dothi 0.45 Sự phụ thuôc cua hệ số hâp...

Ngày tải lên: 06/12/2012, 08:28

Ngày tải lên: 06/03/2014, 15:20

... Background Until now, we have focused on quantum mechanics of particles which are “featureless” – carrying no internal degrees of freedom A relativistic formulation of quantum mechanics (due to Dirac ... and covered later in course) reveals that quantum particles can exhibit an intrinsic angular momentum component known as spin However, the discovery of quantum mechanical spin predates its theoretical ... possesses an additional intrinsic “ = 1/2” component known as spin Quantum mechanical spin Later, it was understood that elementary quantum particles can be divided into two classes, fermions and...

Ngày tải lên: 09/03/2014, 00:20

... phthalocyanine/aromatic diamine multiple quantum wells Appl Phys Lett 2002, 80: 262 8 21 Song SF, Zhao DW, Xu Z, Xu XR: Energy transfer in organic quantum well structures Acta Phys Sin 2007, 56: 3499 22 Zhu HN, Xu ... Device A 432.5 cd/m 1, 461 cd/m2 Device B 431.3 cd/m 1,384 cd/m2 Device C 1,2 96 cd/m2 3,071 cd/m2 Device D 89.17 cd/m2 538 .6 cd/m2 1,083 cd/m2 Device E 291 .6 cd/m2 Device F 2 16. 9 cd/m2 801.1 cd/m2 ... multiple quantum well structures Appl Phys Lett 2010, 97:083304 17 Zhao J, Junsheng Y, Zhang L, Wang J: Non-doped phosphorescent white organic lightemitting devices with a quadruple -quantum- well...

Ngày tải lên: 06/05/2014, 08:55

... 88.88 8,521 3.0 (12 V) (12 V) C 86. 56 7,094 3.0 (12 V) (12 V) D 78.88 6, 8 56 2.5 (12 V) (12 V) Luminous efficiency max (cd/A) 17.99 Quantum efficiency max (%) 9.08 19. 46 10.02 19.95 10.05 18.24 8.72 ... Ger) 2002, 14: 163 3- 163 6 Watanabe S, Ide N, Kido J: High-efficiency green phosphorescent organic lightemitting devices with chemically doped layers Jpn J Appl Phys 2007, 46: 11 86- 1188 Shen J, Yang ... diamine multiple quantum wells Appl Phys Lett 2002, 80: 262 8- 263 0 Huang JS, Yang KX, Liu SY, Jiang HJ: High-brightness organic double -quantum- well electroluminescent devices Appl Phys Lett 2000,...

Ngày tải lên: 20/06/2014, 23:20

... 95: 266 805 doi:10.11 86/ 15 56- 276X -6- 520 Cite this article as: Ye et al.: Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well Nanoscale Research Letters 2011 6: 520 ... 92:1 266 03 Ivchenko EL, Kiselev AA: Electron g-factor of quantum- well and superlattices Sov Phys Semicond 1992, 26: 827 Kalevich VK, Korenev VL: Anisotropy of the electron g-factor in GaAs/ AlGaAs quantum- wells ... 12 14 16 18 Pump Power(mW) Time Delay (ps) E(meV) B//[110] B//[1-10] 0.032 0.024 024 (c) 0. 060 T=1.5K B=2T 0.0 36 E(meV) ) Kerr Rotation (a.u.) Ye et al Nanoscale Research Letters 2011, 6: 520 http://www.nanoscalereslett.com/content /6/ 1/520...

Ngày tải lên: 21/06/2014, 00:20

... Acknowledgements This study was supported by the 973 program (2006CB604908, 2006CB92 160 7), and the National Natural Science Foundation of China (60 625402, 60 990313) Authors’ contributions JLY performed the ... 108:0135 16 24 Chen YH, Wang ZG, Yang ZY: A new interface anisotropic potential of zinc-blende semiconductor interface induced by lattice mismatch Chin Phys Lett 1999, 16: 56 doi:10.11 86/ 15 56- 276X -6- 210 ... birefringence of asymmetric (001) quantum wells Appl Phys Lett 1997, 70:24 46 Ye XL, Chen YH, Xu B, Wang ZG: Detection of indium segregation effects in In-GaAs/GaAs quantum wells using reflectance-difference...

Ngày tải lên: 21/06/2014, 05:20

... 1989, 55:1888 doi:10.11 86/ 15 56- 276X -6- 139 Cite this article as: Luo et al.: A delta-doped quantum well system with additional modulation doping Nanoscale Research Letters 2011 6: 139 Submit your manuscript ... quantum wells Phys Rev B 1997, 56: 15238 Lee CH, Chang YH, Suen YW, Lin HH: Magnetic-field-induced delocalization in center-doped GaAs/AlxGa1-xAs multiple quantum wells Phys Rev B 1998, 58:1 062 9 ... Al0.27Ga0.73As/GaAs single quantum wells grown by metalorganic chemical vapour deposition Thin Solid Films 1995, 254 :61 Lee CH, Chang YH, Suen YW, Lin HH: Magnetic-field-induced insulatorquantum Hall conductor-insulator...

Ngày tải lên: 21/06/2014, 05:20

Ngày tải lên: 22/06/2014, 00:20

... research 307 14 15 References 16 S.F Yoon, C.Y Liu, Z.Z Sun, K.C Yew, Nanoscale Res Lett 1, 20 (20 06) S Mokkapati, M Buda, H.H Tan, C Jagadish, Appl Phys Lett 88, 161 121 (20 06) S.S Mikhrin, A.R Kovsh, ... Valster, J.A.M van den Heijkant, G.A Acket, Appl Phys Lett 66 , 920 (1995) V.M Ustinov, A.E Zhukov, A.Y Egorov, N.A Maleev, Quantum Dot Lasers (Oxford University Press, 2003) 123 ... 35Ga0 65 As (500nm) P=5×1017 GaAs (9nm) P-doped GaAs (10nm) P=5×1017 GaAs (14nm) In0.15Ga0.85As (5nm) InAs (0.8nm) GaAs Barrier (33nm) N-doped Al0 35Ga0 65 As (500nm) N=5×1017 N-doped Al0 35Ga0 65 As...

Ngày tải lên: 22/06/2014, 18:20

... 46, 773 (1992) H.P Wagner, W Preffl, Solid State Commun 66 , 367 (1988) P.W Barmby, J.L Dunn, C.A Bates, Phys Rev B, 54, 8 566 (19 96) A.G Zhilich, B.S Monozon, Sov Phys Solid State, 8, 28 46 (1 967 ) ... Phys-Semicond 22, 8 96 (1988) 16 G Wunner, H Ruder, Phys Lett A 85, 430 (1981) 17 M Bayer, P Ils, M Michel, A Forchel, Phys Rev B 53, 466 8 (19 96) 18 S.V Branis, G Li, K.K Bajaj, Phys Rev B 47, 13 16 (1993) ... the confluent hypergeometric functions Taking into consideration Eqs (6) –(8), and (5) the binding energy, as well as in [ 26] , is found as the difference Eb (R,B) = E01 À Ei (R,B) Discussion of...

Ngày tải lên: 22/06/2014, 18:20

... Yariv, Appl Phys Lett 49, 168 9 (19 86) 16 P.S Zory, A.R Reisinger, R.G Waters, L.J Mawst, C.A Zmudzinski, M.A Emanuel, M.E Givens, J.J Coleman, Appl Phys Lett 49, 16 (19 86) 17 D.G Deppe, D.L Huffaker, ... Dion, R.D Goldberg, I.V Mitchell, J Appl Phys 78, 369 7 (1995) 11 M Buda, J Hay, H.H Tan, J Wong-Leung, C Jagadish, IEEE J Quantum Electron 39, 62 5 (2003) 12 M Sugawara, N Hatori, H Ebe, M Ishida, ... Koteles, S Charbonneau, Appl Phys Lett 65 , 62 1 (1994) S Charbonneau, P.J Poole, Y Feng, G.C Aers, M Dion, M Davies, R.D Goldberg, I.V Mitchell, Appl Phys Lett 67 , 2954 (1995) ` T Surkova, A Patane,...

Ngày tải lên: 22/06/2014, 18:20

... - 60 C) T0=79.4 K o ( 10 -60 C) 10 20 30 40 50 60 70 -1 80 o Temperature ( C) Fig 11 (a) Temperature-dependent (10 65 °C) P – I characteristics of GaInNAs QD lasers with dimension of 50 · 1, 060 ... Res Lett (20 06) 1:20–31 46 K Nishi, H Saito, S Sugou, J.S Lee, Appl Phys Lett 74, 1112 (1999) 47 J Ahopelto, H Lipsanen, M Sopanen, T Koljonen, H.E.-M Niemi, Appl Phys Lett 65 , 166 2 (1994) 48 ... is high in our GaInNAs QD lasers Figure 11a shows the temperature-dependent (10– 65 °C) P – I characteristics of an unbonded GaInNAs QD lasers with dimension of 50 · 1, 060 lm2under pulsed measurement...

Ngày tải lên: 22/06/2014, 22:20

... + 3b2 + b (6 − 10t) − 10t + 5t2 ) +a(2b3 (t − 1) + 4(t − 3)t2 − b2 (6 − 10t + 7t2 ) + 4bt(3 − 4t + t2 )) −a2 (b3 + b2 (6 − 8t) − 2t (6 − 6t + t2 ) + b (6 − 18t + 11t2 ) +ε− B e−2(a+t) a6 (2 − 2ea+t ... Eq.(17): a3 LB (6 − et−a (6 + (6 + (a − t)(3 + a − t))(a − t))) (a − t)4 ) A2 bLe−t (e2t − 1) + + a3 B Le−a (ea+2t (a − t)3 − ea k (a + t)3 2t(b + t) t(a2 − t2 )3 FP E (t) = +et (a2 (6 + a(4 + a))t ... (project B2009-01 268 ) is gratefully acknowledged REFERENCES [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [ 16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [ 26] [27] [28] D Eger,...

Ngày tải lên: 30/10/2015, 19:39

Ngày tải lên: 30/03/2016, 22:01

... exercise without all the conventional wisdom and marketing b.s that tends to lead us astray Where our well- being is concerned, astray is the last place we want to be Read more: Start a Small Business...

Ngày tải lên: 27/01/2014, 20:58

... a-Applied Research 166 (2) :65 1 -65 7 ISSN: 0031-8 965 Kerner, G., and M Asscher (2004) Laser patterning of metallic films via buffer layer Surface Science 557 (1-3):5-12 ISSN: 0039 -60 28 Kerner, G., ... 0021- 960 6 1 06 Lasers – Applications in Science and Industry Samokhin, A A (20 06) Estimate of pressure produced during explosive boiling of a liquid film on a substrate heated by laser pulses Quantum ... (10):4545-4553 ISSN: 1520 -61 06 Kerner, G., O Stein, and M Asscher (20 06) Patterning thin metallic film via laser structured weakly bound template Surface Science 60 0 (10):2091-2095 ISSN: 0039 -60 28 Kerner,...

Ngày tải lên: 18/06/2014, 22:20

... within the conduction band of a GaAs quantum well, ” Applied Physics Letters 46, (1985) 11 56- 1158 2 86 2 86 Advances in Lasers and Electro Optics Advances in Lasers and Electro Optics [38] G Sun, ... with the Lorentzian lineshape centered at some peak transition energy 266 266 Advances in Lasers and Electro Optics Advances in Lasers and Electro Optics where is the full width at half maximum (FWHM) ... band gap semiconductors [63 66] Since the first successful growth of this alloy [67 ], device- quality epilayers with a wide range of alloy contents have been achieved [68 ,69 ] Incorporation of Sn...

Ngày tải lên: 20/06/2014, 11:20