Homopolymers and copolymers were investigated for their performance in photovoltaic devices, and the use of both solid polymer electrolyte and liquid electrolyte was examined.. The reduc
Trang 1Photovoltaic devices based on polythiophenes and
substituted polythiophenes
C.O Tooa, G.G Wallacea,*, A.K Burrellb, G.E Collisb, D.L Of®cerb,
E.W Bogec, S.G Brodiec, E.J Evansc
a Intelligent Polymer Research Institute, University of Wollongong, NSW 2522, Australia
b IFS-Chemistry, Massey University, Private Bag 11222, Palmerston North, New Zealand
c BHP Steel Research Laboratories, The Broken Hill Proprietary Company Limited,
P.O Box 202, Port Kembla, NSW 2505, Australia Received 4 February 2000; accepted 15 September 2000
Abstract
In recent years there has been considerable interest in the fabrication of photovoltaic devices using polymeric and organic materials This paper presents work carried out using a range of polythiophenes, including some substituted with porphyrin moieties as light harvesters Homopolymers and copolymers were investigated for their performance in photovoltaic devices, and the use of both solid polymer electrolyte and liquid electrolyte was examined Both photoelectrochemical cells and Schottky devices were investigated The best photoelectrochemical cell was fabricated using polyterthiophene which had Voc 139 mV, Isc 123:4 mA cm 2, ®ll factor 0:38, and energy conversion efficiency 0:02% at a halogen lamp intensity of 317 W m 2 The Schottky device gave a Voc 0:5 V and Isc of 0.98 mA cm 2at a halogen lamp intensity of 500 W m 2 # 2001 Elsevier Science B.V All rights reserved
Keywords: Photovoltaic devices; Polythiophenes; Conducting polymers; Porphyrins
1 Introduction
Commercial photoelectric conversion devices are made
mostly from inorganic semiconductors In the last two
decades, much work has focused on polymeric and organic
materials [1,2] since the structure and properties of these
photoactive materials can be readily controlled and they are
considerably cheaper than the inorganic equivalents These
studies include the incorporation of conducting polymers
into photovoltaic devices Early work involved devices
based on polyaniline [3], poly(p-phenylene vinylene) [4],
poly(p-phenylene vinylene)/perylene heterojunction [5],
poly(2-methoxy-5-(20-ethyl-hexyloxy)-1,4-phenylene
viny-lene composite [6,7], poly(3-methylthiophene) [8] and
polythiophene [9]
In the approach described previously for
poly(3-methylthiophene) (P3MTh) [8], the P3MTh functions as a
p-type semiconductor where holes or hole-polarons are the
dominant carriers that cause the measured photocurrent The holes generated by irradiation of light cause, via the external circuit, the counter electrode consisting of a Pt coating on indium tin oxide (ITO) coated glass to be positively charged, whilst the electrons move to the P3MTh/solid polymer electrolyte (front) junction The holes oxidise the electron donor iodide to generate triiodide at the counter electrode The electrons injected to the front contact reduce the triio-dide back to iotriio-dide Thus, the cell converts light to electricity
in a renewable process where there is no net chemical reaction
Polythiophenes can be electrosynthesised by oxidative polymerisation according to Eq (1)
(1)
The properties of the polymer can be controlled by the judicious selection of the substituents R1 and/or R2 In addition, the type of counter-anion (A ) can also influence
* Corresponding author Tel.: 61-2-4221-3127; fax: 61-2-4221-3114.
E-mail address: gordon_wallace@uow.edu.au (G.G Wallace).
0379-6779/01/$ ± see front matter # 2001 Elsevier Science B.V All rights reserved.
PII: S 0 3 7 9 - 6 7 7 9 ( 0 0 ) 0 0 5 7 5 - 0
Trang 2the properties of the polymer Polythiophenes can undergo
electrochemical redox reactions such as
(2)
where A is a mobile counter-anion that can be exchanged
with other anions in solution If the counter-anion is large
and immobile, then the redox reaction is more likely to be
represented by Eq (3)
(3)
where Mis a cation inserted from the electrolyte solution to
preserve charge balance in the polymer matrix
In this work, tetrabutylammonium perchlorate was used as
the electrolyte and so the counter-anion, perchlorate, would
be expelled from the polymer on reduction, thus leaving the
polymer backbone uncharged (Eq (2)) The neutral polymer,
therefore, behaves like a p-type semiconductor
We report here investigations into polymers made from
commercially available 3-methylthiophene (3MTh),
bithio-phene (BiTh) and terthiobithio-phene (TTh); such monomers and
their derivatives have been successfully electropolymerised
by others [8±15] In addition, we have also investigated
the use of porphyrin substituents on polythiophenes in
order to enhance the light harvesting capabilities of the
conducting polymer materials The use of porphyrins in
photoelectric conversion is well-documented [16±20] Thus,
trans-1(20-(50,100,150,200-tetraphenylporphyrinyl))-2-(300
-thienyl)ethene (I) and trans-1-(20-(50,100,150,200
-tetraphe-nylporphyrinyl))-2-(3000-terthienyl)ethene (II) were prepared
and electropolymerised with and without other thiophene
monomers
In summary, the main objectives of this work were to
electrosynthesise photoactive coatings from
thiophene-based monomers and fabricate them into
photoelectro-chemical and Schottky devices The electropolymerisation
conditions for each polymer or copolymer were investigated
and optimised to produce the best photovoltaic response
2 Experimental 2.1 Reagents and materials The trans-1-(20-(50,100,150,200 -tetraphenylporphyrinyl))-2-(300-thienyl)ethene (TPP-Th) (I) and trans-1-(20-(50,100,
150,200-tetraphenylporphyrinyl))-2-(3000-terthienyl)ethene (TPP-TTh) (II) were synthesised by Burrell et al [21] at Massey University In addition 3-methylthiophene (3MTh, Aldrich), bithiophene (BiTh, Aldrich), terthiophene (TTh, Aldrich), tetrabutylammonium perchlorate (TBAP, Fluka), polyethylene oxide (PEO, Mv c.600 000, Aldrich), potas-sium iodide (Univar, Ajax), iodine (Univar, Ajax or Aldrich 99.8%), methanol (Univar, Ajax), acetonitrile (ACN, Univar, Ajax), dichloromethane (DCM, Univar, Ajax), isopropanol (Univar, Ajax), tetrapropylammonium iodide (Aldrich,
98%), ethylene carbonate (Aldrich 99%), and propylene carbonate (Aldrich 99%) were used as received
ITO coated glass (40 or 10 O sq 1) was purchased from Delta Technologies Limited (USA), cut into required sizes, washed with Teepol, rinsed thoroughly with Milli-RO water followed by isopropanol, and allowed
to dry
The solid polymer electrolyte (SPE) was formulated by dissolving polyethylene oxide (1 g) in 10 cm3 of I2/KI in methanol, which was made up by dissolving I2(0.15 g) and
KI (1.5 g) in 100 cm3 of methanol In addition, a liquid electrolyte was formulated by dissolving I2 (60 mM) and tetrapropylammonium iodide (500 mM) in ethylene carbo-nate/propylene carbonate (1:1 by weight)
A thin layer of platinum was sputter coated onto the ITO coated glass using a Dynavac Magnetron Sputter Coater Model SC100MS The sputtering was performed at a current
of 50 mA and Ar pressure of 2 10 3mbar Under these conditions the Pt thickness obtainable would be 2 AÊ s 1 A
Pt thickness of 10 AÊ was sputter coated In addition, Al was also sputter coated at 150 mA for 1±2 min when fabricating Schottky devices
2.2 Equipment Electrosynthesis and testing of polymers were achieved
by using an electrochemical hardware system comprising
of an EG&G PAR 363 Potentiostat/Galvanostat, a Bioana-lytical Systems CV27 Voltammograph, a MacLab 400 with Chart v 3.5.7/EChem v 1.3.2 software (AD Instruments), and a Macintosh computer A three-electrode electrochemi-cal cell was used which comprised of a working electrode (Pt disc or ITO coated glass or these substrates with polymer coatings on them), a Pt mesh auxiliary electrode and a Ag/
Agreference electrode with salt bridge
Testing of devices was done at BHP Steel Research Laboratories (Port Kembla) using an EG&G PAR 263A Potentiostat/Galvanostat with associated software and
a halogen lamp (317 W m 2) to obtain current±voltage (I±V) curves
Trang 3Subsequently, testing was done at the University of
Wollongong using an halogen lamp (SoLux MR-16 from
Wiko Ltd.) and a set-up comprising of a Macintosh
com-puter/MacLab 400 with EChem v1.3.2 software (AD
Instru-ments)/CV27 Voltammograph (Bioanalytical Systems) In
general, a light intensity of 500 W m 2 was used unless
indicated otherwise
UV±VIS spectra were obtained using a Shimadzu
UV1601 spectrophotometer and scanning over the range
300±1100 nm
2.3 Photovoltaic device fabrication
2.3.1 Photoelectrochemical cell
The polymers and copolymers were electrodeposited on
ITO coated glass and rinsed with dichloromethane or
acet-onitrile and then allowed to dry In general, the polymer and
copolymer coatings were electroreduced at 0.4 or 0.8 V
in 0.1 M TBAP/DCM or 0.1 M TBAP/ACN before being
assembled as devices The device (Scheme 1) was assembled
by sandwiching up to 1 ml of SPE solution per cm2of area
between the polymer coated ITO coated glass electrode and
the Pt sputtered ITO coated glass electrode, and allowed to
dry for 24 h
In the case of the liquid electrolyte, the device was
assembled by sandwiching the liquid electrolyte between
the two respective electrodes This was done with and
without a border of plastic ®lm as spacer between the
electrodes
2.3.2 Schottky junction devices
Schottky devices were made from electropolymerised
conducting polymer, e.g polyterthiophene (PTTh) in the
reduced form, on ITO coated glass The polymer was then
coated with a thin layer of Al by sputter coating The device
is illustrated in Scheme 2
2.4 Photovoltaic testing The photovoltaic devices were tested by linear sweep voltammetry (LSV) The characteristics of an I±V curve are shown in Scheme 3 Thus, the open circuit voltage (Voc) is where the current is zero, and the short circuit current (Isc) is where the voltage is zero Other characteristics of a photo-voltaic device are given below
The ®ll factor (FF) is given by FFvoltage at peak power Vopen circuit voltage Vppcurrent at peak power Ipp
ocshort circuit current Isc The energy conversion ef®ciency (ECE) is given by ECE total power of light radiating on the cell areaVpp Ipp (5) or
ECE total power of light radiating on the cell areaVoc Isc FF (6)
3 Results and discussion 3.1 Poly(3-methylthiophene) The poly(3-methylthiophene) photovoltaic system was chosen as the starting point for our investigations because
of published information already available [8] Poly(3-methylthiophene) was electrodeposited on ITO coated glass from a solution consisting of 3-methylthiophene (0.5 M) in TBAP (0.1 M)/ACN The constant potential (CP) method was used at a potential of 1.4 V versus Ag/Agand growth time was 30 min The dried polymers were examined by UV±VIS spectrophotometry in their oxidised and reduced states Thus, the spectrum of poly(3-methylthiophene) in its
Scheme 1 Photovoltaic device.
Scheme 2 Schottky device.
Trang 4oxidised state showed the free-carrier tail at longer
wave-length (1100 nm) which is characteristic of a conducting
polymer After reduction, this free-carrier tail was lost;
signifying a loss of conductivity The reduced
poly(3-methylthiophene) was fabricated into solid state devices
using the SPE Vocof 52 mV, Iscof 1.23 mA cm 2, ®ll factor
of 0.24 and ECE of 5 10 5% were obtained at a halogen
light intensity of 317 W m 2 This compares favourably
with the results reported by Yohannes et al [8] of
Voc 140 mV, Isc 0:35 mA cm 2 at a light intensity of
1000 W m 2
3.2 Polybithiophene
PolyBiTh was electrodeposited by cyclic voltammetry
(CV) and by constant potential (Table 1) From the growth
CV, it was observed that BiTh began to oxidise at 0.90 Vand
that the current increased with increasing number of cycles,
thus signifying that a conductive polymer was being formed
The UV±VIS spectra of the oxidised and reduced polymer
were obtained (Fig 1a and b) In the spectrum of
poly-bithiophene, reduced at 0.4 V, the loss of the bands above
600 nm was observed, thus demonstrating a loss of con-ductivity of the polymer
Table 1 summarises the results obtained from these reduced polymers when fabricated into photoelectrochem-ical cells These devices were tested with a 317 W m 2
halogen light source In general, thinner polymer ®lms gave better photovoltaic responses The better devices were obtained from polymers produced by CV growth rather than potentiostatic growth The best device incorporated a polymer grown for 2 cycles by CV at 100 mV s 1, with potential limits of 0.4 to 1.2 V (Voc 247 mV, Isc 13:4 mA cm 2, ®ll factor 0:33, ECE 0:0034%) The best device with potentiostatic-growth polymer was obtai-ned at 1.1 V and grown for 15 mC cm 2 (Voc 234 mV,
Isc 5:71 mA cm 2, ®ll factor 0:36, ECE 0:0015%)
Scheme 3 Current±voltage characteristics of a photovoltaic device The
maximum output of the cell is given by the product I pp V pp , where I pp is the
current at peak power and V pp is the voltage at peak power.
Table 1
Characteristics of photoelectrochemical cells from polybithiophene a
Polymer growth conditions V oc (mV) I sc (mA cm 2 ) Fill factor ECE (%)
CV at 100 mV s 1 , 0.4 to 1.1 V, 2 cycles 240 7.04 0.32 0.0017
CV at 100 mV s 1 , 0.4 to 1.1 V, 5 cycles 232 4.47 0.33 0.0011
CV at 100 mV s 1 , 0.4 to 1.2 V, 2 cycles 247 13.4 0.33 0.0034
CV at 100 mV s 1 , 0.4 to 1.2 V, 5 cycles 208 3.64 0.31 0.0008
CV at 100 mV s 1 , 0.4 to 1.4 V, 2 cycles 206 3.86 0.32 0.0008
CV at 100 mV s 1 , 0.4 to 1.4 V, 5 cycles 196 5.28 0.33 0.0011
a Monomer solution was BiTh (10 mM)/TBAP (0.1 M)/CH 3 CN Polymers grown by CP were pre-reduced at 0.4 V (vs Ag/Ag ) before assembly into photoelectrochemical cells Light source: halogen lamp (317 W m 2 ) CV cyclic voltammetry, and CP constant potential.
Fig 1 UV±VIS spectra of polybithiophene on ITO coated glass (a) Polymer in oxidised form; (b) polymer after electrochemical reduction at 0.4 V (vs Ag/Ag ).
Trang 53.3 Polyterthiophene
Commercial terthiophene was easily electropolymerised
onto ITO coated glass and fabricated into PV devices As
previously, the currents increased with increasing number of
cycles during growth of polyterthiophene by CV
Electro-polymerisation was also achieved by potentiostatic and
constant current (CI) methods Potentiostatic growth at
1.0 V afforded a slow increase in the current with time
Galvanostatic growth at 1 mA cm 2 occurred at 1.11 V
Examples of UV±VIS spectra of oxidised and reduced
polyterthiophene (PTTh) are given in Fig 2a and b,
respec-tively Once again, it can be seen from these spectra that, on
reduction of the polymer at 0.4 V, the bands above 600 nm are lost, signifying a loss of conductivity
The reduced polymers were fabricated into photoelectro-chemical cells with SPE and tested The results (Table 2) suggest that polymer growth by CV gives better devices than polymer growth by CI or CP I±V tests, however, also demonstrate that potentiostatic and galvanostatic growth give similar results Thus, the best device had Voc
179 mV, Isc 15:1 mA cm 2, ®ll factor 0:35, and ECE
0:0030%
3.4 Copolymers with TPP-thiophene (TPP-Th) or TPP-terthiophene (TPP-TTh)
Homopolymers from TPP-thiophene could not be suc-cessfully grown, and although homopolymers from TPP-terthiophene could be grown, poor photovoltaic responses were obtained Therefore, copolymers of 3MTh, BiTh or TTh with TPP-Th or TPP-TTh, light harvesting molecules, were electrochemically synthesised on ITO coated glass and fabricated into photoelectrochemical cells in the expectation
of obtaining better photovoltaic characteristics
3.4.1 Copolymer of 3-methylthiophene with TPP-thiophene (TPP-Th)
3-Methylthiophene was copolymerised with TPP-Th on ITO coated glass at 1.4 V from a comonomer solution consisting of 3-methylthiophene (0.01, 0.06, 0.5, 2.0 M)/ TPP-Th (0.01 M)/TBAP (0.1 or 0.2 M)/DCM The UV±VIS spectra of the deposits (e.g Fig 3a) exhibit peaks (423 and
523 nm) not present in the spectrum of poly(3-methylthio-phene), indicative of the incorporation of the TPP-Th monomer (see Fig 3b for UV±VIS spectrum of TPP-Th monomer) This was regardless of whether the copolymer was in its oxidised or reduced state
The TPP-Th/3MTh copolymerisation was further investi-gated in order to optimise copolymer growth Maximum
TPP-Th in the copolymer was sought TPP-The following comonomer
Fig 2 UV±VIS spectra of polyterthiophene on ITO coated glass (a)
Polymer in oxidised form; (b) polymer after electrochemical reduction at
0.4 V (vs Ag/Ag ).
Table 2
Characteristics of photoelectrochemical cells from polyterthiophene a
Polymer growth conditions V oc (mV) I sc (mA cm 2 ) Fill factor ECE (%)
CV at 100 mV s 1 , 0.4 to 1.1 V, 2 cycles 172 8.86 0.31 0.0016
CV at 100 mV s 1 , 0.4 to 1.1 V, 10 cycles 179 15.1 0.35 0.0030
CV at 100 mV s 1 , 0.4 to 1.2 V, 2 cycles 172 4.80 0.30 0.0008
CV at 100 mV s 1 , 0.4 to 2.0 V, 4 cycles 187 13.1 0.35 0.0027
CP at 1.0 V, 15 mC cm 2 , reduced at 0 V for 60 s 104 3.02 0.19 0.0002
CP at 1.1 V, 15 mC cm 2 , reduced at 0 V for 60 s 118 1.86 0.21 0.0002
CP at 1.0 V, 10 mC cm 2 , reduced at 0 V for 60 s 164 6.81 0.29 0.0011
CP at 1.1 V, 10 mC cm 2 , reduced at 0 V for 60 s 150 3.83 0.25 0.0005
a Monomer solution was terthiophene (10 mM)/TBAP (0.1 M)/CH 2 Cl 2 Polymers grown by CP or CI were pre-reduced at 0.4 V (vs Ag/Ag ) unless stated otherwise Light source: halogen lamp (317 W m 2 ) CV cyclic voltammetry, CP constant potential, and CI constant current.
Trang 6ratios of TPP-Th/3MTh were investigated: 10/10, 10/20, 10/
30 mM In all cases, polymer deposition on ITO coated glass
was possible at 1.8 V and above but the deposits were
brittle and tended to ¯ake off Devices were fabricated from
the deposits after pre-reduction It was found that these
devices were not as good as the device made previously
from electrodeposition of copolymer from TPP-Th
(10 mM)/3MTh (2 M) at 1.4 V This is probably due to
the higher potential required to form the copolymer when
higher ratios of TPP-Th were used
Photoelectrochemical cells were assembled from these
reduced copolymers with SPE and tested The best result
was obtained from the copolymer grown from a comonomer
solution of TPP-Th (0.01 M)/3MTh (2 M)/TBAP (0.1 M)/
DCM This device had Voc 83 mV, Isc 1:67 mA cm 2,
®ll factor 0:23 and ECE 0:0001% at a halogen lamp
intensity of 317 W m 2 These results are better than those
obtained from the poly(3-methylthiophene) homopolymer
3.4.2 Copolymers of TPP-Th and BiTh
Copolymers of TPP-Th and bithiophene (BiTh) were
electrosynthesised on ITO coated glass 10 mM TPP-Th
and 10 mM BiTh were used and cyclic voltammetry was
performed from 0.8 or 0.0 V to 1.2, 1.4 or 1.6 V CV
during growth indicated that currents increased with each
cycle, thus con®rming conducting polymer growth
Poten-tiostatic growth also produces electroactive material With
all deposition methods, the deposits tended to be brittle and
¯aked off the electrodes The best results were obtained
when the limit was 1.4 Vor the polymers were grown at a constant potential of 1.4 V For comparison, deposits grown at 1.2 and those at 1.4 V were fabricated into devices after pre-reduction UV±VIS spectra were run on the reduced deposits Typically a major peak at 438 nm, ascribed to the porphyrin substituent, is apparent in the spectra (e.g Fig 4); reduced polyBiTh itself has a major peak at 474 nm (Fig 1b)
These copolymers were fabricated into devices with SPE, and I±V test results indicate that CV growth produces the best devices In addition, for CP growth, thinner ®lms give better results The best device had Voc 204 mV, Isc 1:79 mA cm 2, ®ll factor 0:30, and ECE 0:0003% These results are not as good as those obtained from poly-BiTh alone
3.4.3 Copolymers of TPP-terthiophene (TPP-TTh) and BiTh
Electrocopolymerisation was performed by potentiody-namic and potentiostatic methods It was apparent from the
CV during growth that the current increased with subsequent cycles, thus indicating the growth of a conductive polymer
In addition, the cathodic peak potential shifted cathodically with increasing number of cycles The UV±VIS spectrum of the copolymer (reduced form) is shown as Fig 5 and is substantially different from the spectra of polyBiTh or poly(TPP-TTh) Increasing the BiTh content in the como-nomer solution from 0.1 to 0.2 M gave better copolymers Once again, CV growth of the copolymers produced the best devices with SPE The best solid state device had
Voc 200 mV, Isc 5:77 mA cm 2, ®ll factor 0:31,
Fig 3 (a) UV±VIS spectrum of copolymer of 3MTh/TPP-Th on ITO
coated glass Comonomer solution: 3MTh (1 M)/TPP-Th (0.01 M)/TBAP
(0.2 M)/DCM; copolymerisation potential: 1.4 V (vs Ag/Ag )
Copo-lymerisation time: 30 min (b) UV±VIS spectrum of TPP-Th dip coated
onto a glass slide from a 5 mM TPP-Th/DCM solution.
Fig 4 UV±VIS spectrum of TPP-Th/BiTh copolymer grown potentiody-namically and pre-reduced at 0.4 V (vs Ag/Ag ) in 0.1 M TBAP/ACN for 60 s.
Fig 5 UV±VIS spectrum of copolymer of BiTh and TPP-TTh in its reduced form.
Trang 7and ECE 0:0011% Once again, the results obtained from
the copolymers were not as good as those obtained from the
polyBiTh homopolymer
3.4.4 Copolymer of TPP-terthiophene (TPP-TTh)
and terthiophene
Copolymers of terthiophene with TPP-terthiophene were
electrosynthesised on ITO coated glass and fabricated into
photoelectrochemical cells Potentiodynamic and
potentio-static methods were used The UV±VIS spectrum of the
reduced copolymer is given in Fig 6 and is different from the
spectra of the respective reduced homopolymers
The I±V test results (Table 3) indicate that all the
copo-lymers are comparable to poly-TTh as a material for solid
state photoelectrochemical cells Generally, devices made
from copolymer grown potentiodynamically were better than copolymer generated in other ways The performance
of the device also depended upon the thickness of the copo-lymer grown, with poor performance obtained from very thin
or very thick ®lms In addition, reducing the copolymer at 0.8 V (versus Ag/Ag) gave better results than reduction
at 0.4 or 0 V The best device gave Voc 185 mV,
Isc 15:9 mA cm 2, ®ll factor 0:28 and ECE 0:0026% 3.5 Photoelectrochemical cells assembled using
liquid electrolyte The best performing polymers and copolymers in solid state photoelectrochemical cells were utilised in fabricating new cells that incorporated a liquid electrolyte These cells were tested and a summary of their characteristics is given in Table 4 When liquid electrolyte was used, much higher currents were obtained, and the gain in ef®ciency was 2±7.6 times The best liquid electrolyte device was fabricated using potentiodynamically-grown polyterthiophene, which had Voc 139 mV, Isc 123:4 mA cm 2, ®ll factor 0:38 and ECE 0:0205%
3.6 Schottky devices Schottky devices (Scheme 2) were fabricated, and tested
in the same way as for the photoelectrochemical devices
Fig 6 UV±VIS spectrum of copolymer of terthiophene and TPP-TTh in
its reduced form Reduction potential: 0.8 V (vs Ag/Ag ).
Table 3
Characteristics of photoelectrochemical cells from copolymer of terthiophene and TPP-TTh a
Polymer growth conditions V oc (mV) I sc (mA cm 2 ) Fill factor ECE (%)
CV at 100 mV s 1 , 0.8 to 1.2 V, 10 cycles 26 0.42 0.04 7 10 6
CV at 100 mV s 1 , 0.8 to 1.4 V, 10 cycles 158 4.59 0.25 0.0007
CV at 100 mV s 1 , 0.8 to 1.6 V, 10 cycles 186 8.48 0.23 0.0021
CV at 100 mV s 1 , 0.8 to 1.8 V, 2 cycles 173 12.2 0.30 0.0020
CV at 100 mV s 1 , 0.8 to 2 V, 4 cycles 185 15.9 0.28 0.0026
CV at 100 mV s 1 , 0.4 to 2 V, 4 cycles 160 2.01 0.20 0.0002
CP at 1.1 V, 30 mC cm 2 , reduced at 0 V for 60 s 46 1.29 0.14 7 10 6
a Monomer solution was terthiophene (10 mM)/TPP-TTh (10 mM)/TBAP (0.1 M)/CH 2 Cl 2 Unless stated otherwise, copolymers grown by CP were pre-reduced at 0.8 V (vs Ag/Ag ) before fabrication into devices Light source: halogen lamp (317 W m 2 ) CV cyclic voltammetry, and CP constant potential.
Table 4
Comparison of characteristics of photoelectrochemical cells assembled with SPE or liquid electrolyte a
Type of cell Growth conditions V oc (mV) I sc (mA cm 2 ) Fill factor ECE (%)
Poly-BiTh CV, 0.4 to 1.2 V, 2 cycles 247 13.4 0.33 0.0034
Poly-TTh CV, 0.4 to 2.0 V, 4 cycles 187 13.1 0.35 0.0027
Copol TPP-TTh/TTh CV, 0.8 to 2.0 V, 4 cycles 185 15.9 0.28 0.0026
Copol TPP-TTh/BiTh CV, 0.8 to 1.8 V, 2 cycles 218 4.74 0.30 0.0010
a Light source halogen lamp (317 W m 2 ) CV cyclic voltammetry Photoelectrochemical cells with: ( ) SPE or ( ) liquid electrolyte.
Trang 8The best Schottky device was obtained using the reduced
form of polyterthiophene grown by CV at 100 mV s 1
between the potential limits of 0.8 to 1.1 V for 10 cycles
This device had a Vocof 0.5 Vand Iscof 0.98 mA cm 2under
a halogen lamp intensity of 500 W m 2 The variation of Voc
with light intensity showed that the open circuit voltage
increased linearly (R2 0:9943, 3 degrees of freedom) with
increasing light intensity within the range of 200±
1000 W m 2 This compares favourably with results
reported by Kaneko and Yamada [9] for Schottky devices
incorporating polythiophene tested at a xenon lamp intensity
of 640 W m 2 Their devices had Vocof 0.13 V and Isc of
0.25 mA cm 2 for the reduced form of polythiophene
whereas, for the oxidised form of polythiophene, Voc was
1.07 V and Isc was 1.35 mA cm 2
4 Conclusions
A summary of the best results for photoelectrochemical
devices is given in Table 4 Signi®cant improvement in Voc
and Iscas compared to the devices described by Yohannes
et al [8] from poly-3MTh have been obtained The best
devices provided Isc values which are at least 43±45 times
higher than that published by Yohannes et al., given that the
light source used had an intensity only one third of that used
by the previous workers In general, polymers containing
BiTh or TTh produced the best photoelectrochemical
devices
The use of liquid electrolyte greatly enhances the
ef®-ciency in comparison to SPE devices The best device made
was from poly-TTh This device had Voc 139 mV,
Isc 123:4 mA cm 2, ®ll factor 0:38, and efficiency
0:0205%
A Schottky device was successfully made from
poly-terthiophene from which a Voc of 0.5 V and Isc of
0.98 mA cm 2 was obtained under a light intensity of
500 W m 2
Acknowledgements
We wish to thank the Australian Research Council and
BHP Limited for ®nancial support of this project We are
also grateful to the New Zealand Public Good Science Fund
(MAU809) and the Massey University Research Fund
(GEC)
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