The examination of J-V curves is considered as the basic characterization for solar cells since many electrical parameters can be extracted, giving infor- mation about the device structu[r]
Trang 1Original Article
solar cells performances using one-dimensional modeling
Lourassi Madia, Idris Bouchamab,c, Nadir Bouarissad,*
a Applied Materials Laboratory (AML), University of Djilali Liabes, 22000, Sidi Bel Abbes, Algeria
b Electronic Department, Faculty of Technology, University M Boudiaf, 28000, Msila, Algeria
c Inorganic Materials Laboratory, University M Boudiaf, 28000, Msila, Algeria
d Laboratory of Materials Physics and Its Applications, University of M'sila, 28000 M'sila, Algeria
a r t i c l e i n f o
Article history:
Received 14 April 2019
Received in revised form
21 July 2019
Accepted 4 August 2019
Available online 5 September 2019
Keywords:
III-N materials
InGaN
Solar cells
Light wavelengths
SCAPS-1D
a b s t r a c t
In the present contribution, we determine the effect of light wavelength variation on the performances of the non-polar InGaN-based solar cells in order tofind the optimum light wavelength that yields a high efficiency The calculations are performed using a one-dimensional SCAPS-1D tool (One-Dimensional Solar Cell Capacitance Simulator) The simulation has been carried out by lighting through a
n-In0.3Ga0.7As layer An efficiency of 12.24% with the fill-factor FF ¼ 51.35%, open-circuit voltage
VOC¼ 0.72 V and short-circuit current density JSC¼ 32.80 mA/cm2is obtained under AM1.5G illumi-nation The quantum efficiency characteristic displays a maximum value of more than 90% in the visible range using AM1.5G illumination Moreover, our results show that with increasing light wavelengths from the blue light (around 450 nm) to the end of the red light (around 700 nm), the efficiency increases from 13.76% to above of 20% The short-circuit current density is also increased from 37.33 mA/cm2to 53.81 mA/cm2with increasing light wavelengths from 450 nm to 700 nm However, the variation of the light wavelength seems to have only a small influence on the open-circuit voltage and fill-factor The present study provides information about the properties of the materials used in the cell structure of efficient InGaN solar cells
© 2019 The Authors Publishing services by Elsevier B.V on behalf of Vietnam National University, Hanoi This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/)
1 Introduction
Optoelectronic devices based on III-N materials have received
great attention in recent years They are considered as key
compo-nents of the internet and other optical communication systems[1] In
contrast to many other optoelectronic devices, the III-N based LEDs
and Lasers show a good behavior and good gain[2] The importance of
III-N materials is appearing in the mechanical properties such as the
high fusion point (e.g 3000C for AlN, superior to 1700C for GaN and
up to 1100C for InN)[3], high hardness and high thermal
conduc-tivity… etc.[4], in the optical properties such as the low dielectric
permittivity and large band gap which cover all the visible spectrum
till near-ultraviolet and,finally, in the electrical properties like the
high mobility of carriers These materials were widely used for
high-resolution laser prints[5] Recently, they have been used for
high-performance solar panel fabrication[3] Combining the above binary
systems gives birth to a new great optical material, the ternary InGaN (Indium Gallium Nitride) This material has the ability to cover the entire visible spectrum because of its adjustable direct band gap that ranges from infrared-region (0.7 eV for InN) to near UV-region (3.4 eV for GaN)[6], and high absorption coefficient (~105 cm1)[7,8].Table 1
gathers the theoretical values of the efficiency and those of Vocand Jsc, obtained in the case of multi-junction structures, homo-junctions and multi-quantum wells (MQWs) based on InGaN under different spectra
The reason behind choosing non-polar InGaN material in the present work is that several works demonstrated that the presence of polarization in a InGaN-based solar cell has a negative impact on its outcomes[9e11] In this work, an alternative structure of n-InxGa1-xN/ p-GaN/p-Si thinfilm solar cells is considered We show how the device performance is affected by the variation of the light wavelength The results are compared with the AM1.5G illumination case (Table 1)
* Corresponding author.
E-mail address: n_bouarissa@yahoo.fr (N Bouarissa).
Peer review under responsibility of Vietnam National University, Hanoi.
Contents lists available atScienceDirect Journal of Science: Advanced Materials and Devices
j o u r n a l h o m e p a g e : w w w e l s e v i e r c o m / l o c a t e / j s a m d
https://doi.org/10.1016/j.jsamd.2019.08.008
2468-2179/© 2019 The Authors Publishing services by Elsevier B.V on behalf of Vietnam National University, Hanoi This is an open access article under the CC BY license
Trang 22 Relations and parameters of InxGa1- xN material used in the
simulation
As mentioned above, the attractive characteristics of the
non-polar InxGa1-xN ternary alloys make it a useful candidate for solar
cells fabrication The calculations showed that all III-N materials in
the wurtzite phase have a direct band-gap The latter can be
esti-mated for the InxGa1-xN alloys as a function of the molar fractionx
using GaN and InN band-gaps as follows[25]
EgðInxGa1xNÞ ¼ xEgðInNÞ þ ð1 xÞEgðGaNÞ bxð1 xÞ (1)
where b is the bowing parameter The calculated value of InxGa1-xN
alloy band-gap energy is: Eg(InxGa1-xN)¼ 2.9 eV for x ¼ 0.3 (the
choice of the x value is supported by Kun-Ching Shen et al who
proved experimentally that the indium composition in the InxGa
1-xNfilms could be modulated from 33% to 62%[27], where the value
of the parameter b of InxGa1-xN is equal to 1.43 eV) The value of the
band-gap bowing parameter has been evaluated for the InxGa1-xN
material system by J Wu et al.[26] To extract the electron and hole
effective masses used in the simulation program, we have used the
following equation[28]:
1
mABðxÞ¼
x
mAþ1 x
The above equation has been derived from the Schr€odinger
equation, given as[28]:
"
h2V2
2m0þX
r
uðr tÞ
# / h2V2
Using equation(2), we have calculated the InxGa1-xN effective
masses for several compositions x The results are shown inTable 2
The effective densities of states[35], electron affinity[36]and the dielectric constant [37]were calculated using the following equations The required values of GaN and InN materials used to calculate the InxGa1-xN electrical parameters are listed inTable 3
NCðTÞ ¼ 2
2pm*ekT
h2
3
¼ 2:50945 1019
m*e
m0
3 T 300
3
(4)
NVðTÞ ¼ 2
2pm*tkT
h2
3
¼ 2:50945 1019
m*t
m0
3 T 300
3
(5)
cIn x Ga 1x N¼ x ,cInNþ ð1 xÞcGaN (6)
εInxGa1xN¼ x:εInNþ ð1 xÞ:εGaN (7) The InxGa1-xN mobility for electrons and holes, me and mh, respectively, varies depending on the alloy composition and im-purity concentrations In this work and for the InxGa1-xN material system, these values were fixed to be me ¼ 200 cm2/V.s and
mh¼ 30 cm2/V.s[38] The numerical simulation is an important way to analyze numer-ically the performance of the III-N based solar cell structure The
InxGa1-xN-based solar cells have been studied in this contribution
Table 1
Theoretical values of the efficiency, Voc and Jsc obtained in the case of multi-junctions structures, homo-junctions and multi-quantum wells (MQWs) based on InGaN under different spectra.
InGaN-based hetero-junction pin structures
InGaN-based homo-junction pin structures
InGaN/GaN/Al2O3-based multi-quantum wells solar cell (MQWs)
Table 2
Calculated values of InGaN effective masses.
Effective electron mass of density of states 0.2m 0 [29] 0.11m 0 [31] 0.4m 0 [33] 0.16m 0
Table 3 Required values used in the calculation of InGaN parameters.
Crystalline structure Wurtzite Wurtzite Wurtzite
Electron affinity (eV) 4.1 [43] 0.6 [43] 5.8 [39] Dielectric permittivity 10.4 [45] 9.14 [43] 15.3 [43]
L Madi et al / Journal of Science: Advanced Materials and Devices 4 (2019) 509e514 510
Trang 3using SCAPS-1D simulator The SCAPS-1D is a one-dimensional solar
cell simulator developed at the Department of Electronics and
Infor-mation Systems (ELIS) of the University of Gent, Belgium This
soft-ware estimates the steady state band diagram, recombination profile,
and carrier transport in one dimension based on the Poisson equation
and the hole and electron continuity equations The operating
tem-perature is set initially at 300 K The studied structure consists of
n-type In0.3Ga0.7N layer/p-GaN/p-Si substrate A schematic view of this
structure is shown inFig 1
3 Results and discussion
For AM1.5 irradiation (solar spectrum at 1.5 air mass), solar cells
generally work well with natural sunlight (1.5 G) As a matter of
fact, sunlight contains the entire spectrum of radiation
Neverthe-less, only the light with an adequate wavelength will produce the
photoelectric or photovoltaic effects This means that only a part of
the solar spectrum is useful for generating electricity The
wave-lengths which are not absorbed do not produce electron-hole pairs
and, hence, cannot be useful for photovoltaic's They simply
pro-duce heat which can repro-duce the cell's efficiency Solar cells require
certain wavelengths in the light spectrum to generate useful
amounts of electricity For that, the present work will focus on the
comparison between a solar cell under AM1.5 illumination and that
of a determined wavelengths (using opticalfilters)
In this section, we present a numerical study for the
n-In0,3Ga0,7N/p-GaN/p-Si newly proposed structure The energy band
diagram (needed for the discussion ofDEC) of the studied cell is
simulated and shown inFig 2in which we implemented the
ma-terial parameters listed inTable 4 In the solar cell device physics,
the important parameters needed to be discussed are: open-circuit
voltage (VOC), short-circuit current (ISC), fill-factor (FF) and
effi-ciency (h) The parameter FF defines the maximum power in the
solar cell and is given by the expression:
FF¼VmIm
VOCISC ¼ P
where Vm and Im are the maximum voltage and the maximum
current, respectively Pmis the maximum power The most
impor-tant parameter in a solar cell device is the efficiency (h), i.e., the
ratio of the maximum electrical generated power (Pm) with respect
to the incident solar power (Pin) Thus, the solar cell efficiency can
be written as,
h¼Pm
Pin¼FFVOCISC
The absorption coefficient of III-N materials is extremely high
We choose the thickness of In0,3Ga0,7N absorber layer to be com-parable or less than the carrier diffusion length This is attributed to the fact that electrons can be trapped on their way to the ohmic contact In Fig 2, the magnitude of the conduction discontinuity
DECat the n-InGaN/p-GaN interface is produced via the difference between InxGa1-xN and GaN band-gaps and affinities The value of this conduction-band offset is 0.52 eV Owing to the lattice mismatch and the high conduction-band offset of the n-InGaN/p-GaN heterojunction, the minority carriers in the p-n-InGaN/p-GaN semi-conductor are impeded fromflowing across the junction There are considerable interface traps to reduce the lifetime within and around the depletion region
4 J-V characteristics of InGaN-based solar cells under AM1.5G illumination
Fig 3shows the measured J-V characteristics of InGaN-based solar cellsfigured out by SCAPS-1D under the standardized con-ditions (T¼ 300 K and air mass AM1.5G) The examination of J-V curves is considered as the basic characterization for solar cells since many electrical parameters can be extracted, giving infor-mation about the device structure and material properties Refer-ring to the J-V curve, VOCand JSCcan be directly deduced from this curve and we obtain VOC¼ 0.72 V and JSC¼ 32.80 mA/cm2 More-over, from the measured values of Jm ¼ 29.15 mA/cm2 and
Vm¼ 0.42 V, it is possible to calculate the maximum of power as follows:
It is well known that photovoltaic cells are sensitive to the wavelength and respond better to sunlight in certain parts of the spectrum than others.Fig 4provides the graph of QE under stan-dard AM1.5 sun spectral irradiance The spectral irradiance tells us about the availability of power from the sunlight over the various wavelengths It is recommended that the efficiency curve of the cells follows the AM1.5 profile InFig 4(figured out by SCAPS-1D), the quantum efficiency characteristic (QE) has a maximum value of
up to 90% in the visible range under AM1.5G illumination for a p-GaN thickness of 0.5 mm A QE larger than 100% at some wave-lengths may be achieved since the incident photons have more than twice the band gap energy and can create two or more electron-hole pairs per incident photon Moreover,Fig 4reveals
Fig 2 Band diagram of a non-polar InGaN-based solar cell.
Trang 4that the studied InGaN cell still has the potential to increase its
efficiency in the short wavelength region between 400 and 600 nm
by using opticalfilters
5 Effect of light wavelengths on InGaN-based solar cell
performance
InGaN-based solar cells with different wavelengths were
simulated and compared to the AM1.5G illumination case The J-V
characteristics of non-polar InGaN-based solar cells for different
light wavelengths are plotted in Fig 5 using SCAPS-1D The J-V
characteristics reveal an expansion of rollover as the light wave-length striking the cell increases
Fig 6illustrates the trend of the short-circuit current density JSC, open-circuit voltage VOC,fill factor FF, and power conversion effi-ciencyh All these parameters are almost linearly affected by the light wavelength variation
Increasing wavelength yields to a reduction in the photons' energy The recombination rate increases and the carrier lifetime is decreased The recombination in the space charge region SCR may overweight the recombination in the regions outside the SCR reducing the ideality factor of the cell and, consequently, reducing the squareness of the IeV characteristics and the FF
For the short-circuit current density, the nearly linear approxi-mation schemes are explained by equation(11)as a function of the generation rate G given by:
JSC¼ qGLnþ Lp
(11) where Ln and Lp are the electron and hole diffusion lengths, respectively The generation rate gives the number of electron-hole pairs generated at a depth x in the solar cell structure at any wavelength of light due to the absorption of photons The genera-tion rate G as a funcgenera-tion of the absorpgenera-tion coefficient is given by the equation(12) [44]as,
Gðl; xÞ ¼aðlÞfðlÞ½1 RðlÞexp½aðlÞx (12) wherea(l) is the absorption coefficient, 4(l) is the photonsflux, R(l) is the reflection at the surface andlis the wavelength
Table 4
Physical parameters used in the simulation.
Fig 3 J-V characteristic of the non-polar InGaN-based solar cell.
Fig 4 Calculated quantum efficiency QE using AM1.5G illumination source.
Fig 5 J-V characteristics of the non-polar InGaN-based solar cells using different light
L Madi et al / Journal of Science: Advanced Materials and Devices 4 (2019) 509e514 512
Trang 5The open-circuit voltage increases with a rate of 0.003 V per
decade, and is logarithmically related to the short-circuit current
density JSCby the following equation[44],
VOC¼KT
q ln
1þJSC
J0
(13)
where K is the Boltzmann constant, T is the temperature and q is the
elementary charge The simulation results show a diminution of FF
with the increase of light wavelengths This effect has been
re-ported and discussed by other authors in Ref.[45]
The cell parameters obtained under different light wavelengths
are compared to those of the AM1.5G illumination case as shown in
Table 5 The wavelength of 450 nm shows an efficiency of more
than 13% However, an efficiency of 20.36% is obtained when the
wavelength reaches 700 nm The lowest efficiency of 12.24% was
recorded under AM1.5G illumination These facts are unlike the
usual ones where the efficiency obtained by a single-wavelength
should generally be less than AM1.5G radiation The sunlight that
reaches the cell's surface has wavelengths from ultraviolet, through
the visible range, to infrared When light strikes the surface of a
solar cell, some photons are reflected, while others pass right
through Some of the absorbed photons have their energy turned
into heat which mainly reduces the efficiency of the solar cells at
converting solar energy (sunlight) into electricity In other words,
the chemical reactions that occur within the solar cells are more efficient at ambient temperatures than at hot(higher?) temperatures
Based on these results and since the solar spectrum has a wide-range of wavelengths and energies, the key is to use specific ma-terials with their electrical characteristics as a right optical filter allowing the desired wavelengths to pass throughout the solar cell The solar spectrum falls just above the solar cell while thefilter is eliminating the undesired wavelengths
6 Conclusion
In summary, the InxGa1-xN-based thin-film solar cells were studied and simulated using the SCAPS-1D simulator The influence
of light wavelengths on the substrate n-In0,3Ga0,7N/p-GaN/p-Si solar cell performances has been performed The SCAPS-1D tool was used tofind the optimal wavelength that yielded the best ef-ficiency The results showed that the photovoltaic parameters, including both the short-circuit current and the open-circuit voltage, increased as the light wavelength increased, except for thefill-factor, which was found to be slightly decreased Several light wavelengths have been tested as an illumination source for
n-In0,3Ga0,7N/p-GaN/p-Si structure An efficiency of 13.76%, with
VOCz 0.748 V, JSCz 36.335 mA/cm2and FFz 50.61%, has been achieved for a wavelength of 450 nm The maximum efficiency of 20.36%, with VOCz 0.758 V, JSCz 53.817 mA/cm2and FFz 49.90%, has been achieved for a wavelength of 700 nm as an illumination source In the case of AM1.5G illumination, an efficiency of 12.24%, with VOCz 0.727 V, JSCz 32.802 mA/cm2 and FF z 51.35%, has been obtained The quantum efficiency (QE) was found to have a maximum value of up to 90% under the AM1.5G illumination source The difference in productivity of each wavelength sug-gested the use of optical filters for solar cells which allows the collection of the most productive wavelengths of the electromag-netic spectrum more efficiently
Acknowledgments
In this paper, wefigured out the results using SCAPS-1D version 3.3.02 (“SCAPS3302”) of 7-7-2015 from the ELIS Department, Uni-versity of Gent (Belgium) Special thanks to Mr Marc Burgelman for his assistances and supports
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