mdng trong qud trinh phu mdng bing phUdng phdp plasma cd thi anh hadng nhieu din tinh chat cua mdng carbon giing kim caong (DLC) cung nhu cdc mdng composite cd nin cac-bon giing kim [r]
Trang 1KHOA H O C - C O N G N G H C -So 10/2015
V
A n h hu'dng ciia mat dp va nang Itfofng ion d^'n tinh chat cua mang Ti-DLC phu
bang phtftfng p h a p plasma tang ctfoTng
• T h S NCS LE VAN AN
Trudng Dgi hgc SUphgm Ky thu$t TP Hi Chi Minh
• PGS T S BUI XUAN L A M
Trudng Dgi hgc Cing nghi TP Ho Chi Minh
T o m tat: Viic oanh tgc cua cdc ion len bi mit
mdng trong qud trinh phu mdng bing phUdng
chat cua mdng carbon giing kim caong (DLC)
cung nhu cdc mdng composite cd nin cac-bon
giing kim cUdng Mtfc di oanh tgc cua cdc ion
ci thi dugc gia tdng bing 2 cdch Thtf nhit Id
tdng thi diin trin vgt dn phO (di) Thtf hai Id
sd dgng cdc cuin day diin ttf (UBM-colls) dUtfc
bi tri tren cdc cathode nhim tdng mtfc di tip
trung electron, ttfdd tang mit di ion din bi mit
mdng trong qud trinh phQ Bdi bdo trinh bdy inh
hudng cua cudng di plasma do thay doi ding
diin trin cuin ddy den cdc tinh chit cua mdng
Ti-DLC phu bing phUdng phdp plasma hda hgc
T f l k h d a : CUdng di plasma, tfnh chit mdng
Ti-DLC phd, plasma hda hgc
Abstract: The intensity of lon bombardment
strongly influences on the properties of
like carbon (DLC) and
diamond-like carbon based composite thin films The
bombardment intensity can be increased by
two ways: increasing substrate bias voltage
or using UBM-colls, which are installed at the
cathodes The UBM-colls increases the flux
of ions due to entrapment of more electrons
This paper stresses on the influence of plasma
intensity (due to current on the UBM-colls) on
the properties of Ti-DLC thin films deposited via
plasma enhanced chemical vapor deposition
(PECVD)
Keywords: Intensity plasma, Ti-DLC film
properties covered, plasma chemistry
I G i d i t h i ^ u
M d n g mdng cd n d n cac-bon g i i n g kim cfldng
c d c d c tfnh chdt d$c bidt thich hpp cho cdc flng
d y n g c h l n g mdn trong ky t h u ^ t (dd cflng eao, dO
t f l p n g graphit hba) [1,2] Cdc flng d y n g chdng m d n
cDa logi mang nay da dflpc cdng b l trdn n h i l u
kim cfldng vd composite ed n i n cac-bon gidng
kim Cfldng cd t h l dflpc phu len ede ehi tiet bang phflpng phdp vdt ly (PVD) hoac hda hpc (CVD) tang cfldng dflpe sfl d y n g rpng rai n h i t c a e hd thdng phiin xg magnetron eb tfl trfldng ddng dfldc
s f l dyng rbng rai trong ky thudt phCi mdng m b n ^ cac-bon g i i n g kim cfldng vdi hieu qud cao va ehat Iflpng mang tdt Ben egnh eac nam chdm vTnh
c f l u , cde cubn ddy d i ^ n tfl (UBM-colls) Id thdnh xg_ magnetron cb tfl trfldng dbng^dflpe b l trf trdn
m l i cathode cOa hd t h i n g Tit trfldng khdp kfn tao
ra nhd ede cubn ddy ndy se "day" cdc electron
t f l dd lam tdng mat dO plasma d vung ndy Ddng didn edp cho cudn ddy edng Idn thi vide gia tang mdt dd plasma cdng cao ddn tdi vide oanh tge c u a ion Idn b l m$t eua mdng cdng manh ll^t ( v l cd s l
Iflpng ion vd ndng Iflpng ciia moi ion), tfl dd Idm thay d l i cac tfnh chat ciDa mdng dflpc phii Bai
bdo trinh bdy mdt s l dnh hfldng c i i a ddng didn tren cudn ddy den cde tinh chdt eua m d n g
2 Thl n g h i g m
Mdng composite ed n i n cac-bon gidng kim cfldng phCi tren cdc tdm Si eb dfldng kinh 10cm
4 magnetron Sd d l eCia hd thong dflpe md td nhfl
Hinh 2.1
Hinh 2.1: Sd do hi thing phu mdng Tl
Trong nghidn cflu nay,
i a - 2 bia TIC doi didn nhau v d i
nd ^ tinh k h i l t 9 9 , 9 9 % dflpc
s f l d y n g d l phiin x g trong '• mbi trfldng C H , vd Ar v d i t9 Id C.H^ / ( C , H , + Ar) Id 1/4 C d n g sudt dp tren cac bia Id 500W, dp sudt trong qua trinh phii dflpc duy tri khdng d l l d 0,3Pa Mat
dd ion dflpc xac dinh bdng ddu d d Langmuir b d
tri trong budng phii & cdc vj tri khde nhau Chieu
h i l n vi didn tfl SEM Philips FEG-XL30 D d cflng
vd md-dun d a n hdi eOa mdng dflpc xde dinh b d n g
d n vao mdng khbng qud 2 0 0 m m
53
Trang 2KHOA H O C - C O N G N G H I
3 Ket qud va thdo iu^n
Hlnh 3.1 t h l hidn tl 1^ gifla cdc phan tijf lon vd
trung hda tgi vj tri ddt ddu db vdi cdc gid tri dbng
didn trdn cudn ddy khde nhau Neu khdng cd dbng
dien t r d n c u d n ddy cathode thi gdn nhfl khdng cd
0,25 Khi cd d d n g d i d n , ty Id ndy tdng mgnh t^ Id
v d 2 A ) , ty s d ion/trung tinh dat cfle dgi d khodng
cdch 50 - 100mm trnh t f l cathode dong nghTa vdl
dd plasma ldn, s d Iflpng Idn cdc ion (chD y l u Id
A r ) dflpc gia tdc vd oanh tgc b l mat cDa mdng
phu (dang ddy d d n len)
Hinh 3.1:
Ty li gltfa ion trung hda diin tgl cdc vi tri khdc nhau trade cathode vdi cdc gid tri ddng diin khdc nhau
Mat edt eae mdng phu trdn cdc tdm SI d cdc
ddng didn khdc nhau trdn cubn ddy dfldc t h l hien
trdn HIrih 3.2
C-H (do mat dd plasma cao 6 vung d l ) v d n m i m didn tren cudn ddy cathode Idn
Hinh 3.3: Anh hadng cua ddng diin trdn cupn ddy cathode den di cCmg ci}a mdng
C d t h l nhdn thdy vide tdng cfldng db ddng d i ^ n trdn c u | n ddy lam tdng nSng Iflpng va mat db
Hinh 3.2: M$t dt ngang cua mdng Ti-DLC
phQ trin Si d cdc gid tri dong diin khdc nhau
trdn cuin ddy cathode (a) - OA, (b) - IA, (c) - 2»
c a c mdng cb cdu true te vi dgng cdt tflpng tfl
nhfl nhau Do che dp phii d ddng dien khdng doi
tgo mdng khdng du Idn (ehf khodng vdi eV) [ 5] de
ngdn ehan vi§e hinh thdnh edu trtic hinh cdt Tuy
Db ddy cOa mdng trong vdng 2 gid phu do dflpe
trdn ede mau flng vdi dbng dien OV, I V va 2V ldn
Iflpt Id 2 , 1 , 2,3 vd 2,45mm v i d e tdng tde dd phCi
gia tdng m§t dp plasma 6 khu vflc d e , tfl dd lani
gla tang mflc dd tdp trung va ngflng dpng trdn be
mat d l cua hydroeaebon
Db cflng cua cae mdng d o b d n g nanoindenter
dflpe the hien trdn Hinh 3.3 0 ddng dien OA, dd
se Idm gidm dO cflng c i i a m d n g 6 ddng di$n I A ,
2A, dO cflng cua mdng ch? edn 12Gpa D i l u nay
dflpc gidi thich bdi viec hinh thdnh n h i l u hdn n e n
plasma trdn be mdt ciia d l nhflng d c h l dd phii
PECVD vdi nguon DC trong nghidn cflu ndy, ndng Ifldng cua cdc phdn tfl dfldc gia t i e khdng d ^ ldn
de ngan ehan cdu t n i c te vi hinh edt eua mdng vd gia tang d d c f l n g cua m d n g ; ngflpc Igi, dp cflng bi
t h d n h C u n g vdi v i ^ e tang ndng Ifldng oanh tgc tang the didn trdn vdt c a n phu bang n g u i n cb t i n cflng hfln va tdc dd bj gidm di K i t qud nay da dflpc tde g i d cbng b d trong cdng trinh [6,7]
4 K^ lu$n
Thay d l i ddng dien tren cudn ddy cathode se thay doi mdt dd va n§ng Iflpng plasma trdn be mat
d l , tfl dd ldm thay doi c d c tinh chd't eCia mang Ti-DLC Mdt dp plasma Idn nhat t^i vj trf edeh bia khodng 50 - 100mm Khi phu bang n g u i n DC, tdng d b n g dien khdng lam thay doi cdu true t l vi cCia mdng Ti-DLC Ve c d b d n , mang vdn gifl edu dbng dien se lam gidm dp cflng ddn d i n gidm tfnh chat chdng mai mdn c i j a mang •
T a i l i g u t h a m k h d o
[1] Y Lifshitz (1999), Diamond-like
carton-present status Diamond and Related Materials 8,
1659-1676
[21 Y.Liu, A Erdemir, E.I Meletis (1996), An
investigation of the relation ship between graphitization and friction behavior of DLC coatings Surface and
Coatings Technology 86-87
[3] A Matthew, S.S Eskildsen (3/1994),
Engineering applications for diamond-like carton
Diamond and Related Materials
[4] K Hormberg, A Matthews (1994), Coatings
tribology, Tribology series 28
[5] Y Catherine (1991), Preparation techniques
for diamond-like carbon, in "Diamond and diamond like
films and coatings", p.l 93, Ptenum Press, New York
[6] S Zhang, X L.Bui, Y.Q Fu (2003), Magnetron
sputtered hard a-C coatings of very high toughness
Surface and Coatings Technology
[7] BCii Xudn Lam (2009) Ung suit dUcOa mdng
mdng cacbon giing kim cddng phu bing phddng phdp phOn xa, s l 8, Tgp chf GTVT
N g d y n h g n b a i : 10/8/2015
N g d y c h d p n h | n d a n g : 15/9/2015
N g f l d i p h d n b i g n : T S L d V d n V a n g
P G S T S P h a n V d n Q u d n