Simulated EXAFS of Cu and its Fourier transform magnitude using our calculated pressure-induced change in the 1st shell are found to be in a reasonable agreement with those using X-ray d
Trang 1Pressure effects in Debye–Waller factors and in EXAFS
, Vu Van Hungb, Ho Khac Hieua,c, Ronald R Frahmd
a
University of Science,VNU Hanoi, 334 Nguyen Trai, Thanh Xuan, Hanoi, Vietnam.
b
Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi, Vietnam.
c National University of Civil Engineering, 55 Giai Phong, Hai Ba Trung, Hanoi, Vietnam.
d
Bergische Universit¨ at-Gesamthochschule Wuppertal, FB: 8-Physik, Gauß Straße 20, 42097 Wuppertal, Germany
a r t i c l e i n f o
Article history:
Received 15 July 2010
Received in revised form
1 October 2010
Accepted 5 November 2010
Keywords:
EXAFS
Pressure dependence effects
Debye–Waller factors and cumulants
a b s t r a c t
Anharmonic correlated Einstein model (ACEM) and statistical moment method (SMM) have been developed to derive analytical expressions for pressure dependence of the lattice bond length, effective spring constant, correlated Einstein frequency and temperature, Debye–Waller factors (DWF) or second cumulant, first and third cumulants in Extended X-ray Absorption Fine Structure (EXAFS) at a given temperature Numerical results for pressure-dependent DWF of Kr and Cu agree well with experiment and other theoretical values Simulated EXAFS of Cu and its Fourier transform magnitude using our calculated pressure-induced change in the 1st shell are found to be in a reasonable agreement with those using X-ray diffraction (XRD) experimental results
&2010 Elsevier B.V All rights reserved
1 Introduction
The anharmonic EXAFS providing information on structure and
thermodynamic parameters of substances has been analyzed by
means of cumulant expansion approach[1,2] In this formulation,
an EXAFS oscillation functionw(k) is given by[3]
wðkÞ ¼FðkÞ
kR2e2R= l ðkÞIm ei f ðkÞexp 2ikR þX
n
ð2ikÞn n! sðNÞ
, ð1Þ
where k andlare the wave number and mean free path of emitted
photoelectrons, respectively, F(k) is the real atomic backscattering
amplitude,fð Þk the net phase shift andsðnÞðn ¼ 1,2,3, .Þ are the
cumulants
EXAFS is sensitive to pressure[4,5], which can cause certain
changes of cumulants including DWF leading to uncertainties in
physical information taken from EXAFS
The pressure dependence of the DWF or EXAFS second cumulant
has been measured at the wiggler beamlines of Stanford
Synchro-tron Radiation Laboratory (SSRL, USA) for Cu [6], and at the
Laboratoire Pour I’Utisation du Rayonnement Electromagne´tique
(LURE) (Orsay, France) for Kr[7,8] Such pressure effects have been
calculated by correlated Debye model[6], as well as by
Monte-Carlo (MC) simulation[7]and by Loubeyre’s model[8]to interpret
experimental results
Recently the ACEM and SMM have been used for calculation of
temperature dependence of EXAFS cumulants of crystals at zero
pressure[9] The purpose of this work is to develop the ACEM and SMM for calculation and analysis of pressure effects in DWF and in EXAFS of crystals at a given temperature Our new development presented in Section 2 is establishing and solving the equation of state to obtain the pressure-dependent lattice bond length, and then is the derivation of the analytical expressions for pressure dependence of the effective spring constant, correlated Einstein frequency and temperature, DWF or second cumulant, first and third cumulants in EXAFS Morse and Lennard-Jones (L-J) potentials have been used to characterize the interaction between each pair of atoms Numerical calculations (Section 3) using the developed ACEM and SMM show similar results for the pressure-dependent DWF of Cu (fcc), crystal Kr (fcc) and semiconductor Si (dia), where the calculated values for Kr and Cu agree well with experiment and other theoretical results [6–8] Since the experimental data for pressure dependence of EXAFS of Cu is not yet available, we compare the pressure-dependent EXAFS of Cu and its Fourier transform magnitude simulated using the FEFF code [10] and our calculated pressure-induced change in the 1st shell to those using XRD results[11] They show a reasonable agreement
2 Formalism
Using the expressions for free energy and pressure [12]we obtain the equation of state describing the pressure versus volume relation of crystal lattice in the form
Pv ¼ a 1 6
@U0
@a þyzcoth z
1 2K
@K
@a
, z ¼_o
2 , y¼kBT, ð2Þ
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n
Corresponding author.
E-mail address: hungnv@vnu.edu.vn (N Van Hung).
Trang 2where P denotes the hydrostatic pressure and v the atomic volume
v ¼V/N of a crystal having volume V and N atoms, kBis Boltzmann
constant The frequencyoand the nearest neighbor distance a(P,T)
depend on pressure P and temperature T
Hence, solving this equation we can obtain the pressure- and
temperature-dependent nearest neighbor distance a(P,T)
How-ever, for our numerical calculations it is convenient to determine
first the value a(P,0) at pressure P and temperature T¼0 K In this
case Eq (2) is reduced to
Pv ¼ a 1
6
@U0
@a þ
_o0
4K
@K
@a
whereo0is the value ofoat zero temperature
We can take the pair interaction energy in crystals as the power
law using the Morse potential
jðrÞ ¼ D e2aðrr0 Þ
2e a ðrr0Þ
whereadescribes the width of potential, D the dissociation energy
and r the instantaneous bond length between the two immediate
neighboring atoms with r0being its equilibrium value; or using the
(L-J) potential
jðrÞ ¼ e
mn n
s
r
m
m s
r
n
where e describes the dissociation energy, and r has the
same definition as for Morse potential in Eq (4), but withsbeing
its equilibrium value The parameterse,s, n and m are determined
by fitting experimental data (e.g., cohesive energy and elastic
modulus), and the results for some crystals[13,14]are shown in
Table 1
Using (L-J) potential Eq (5), it is straightforward to get the
interaction energy U0, the quantity K and the parameterg in a
crystal[15]as
U0¼ e
nm mAn
s
a
n
nAm s
a
m
ð6Þ
KðaÞ ¼1
2
X
i
@2j
@u2
i b
¼Cn s
a
n
Cm s
a
m
¼Mo2
ð7Þ
containing the coefficients
Cn¼ enm
2a2ðnmÞ ðn þ 2ÞA
a 2 ix
n þ 4An þ 2
;
Cm¼ enm
2a2ðnmÞ ðmþ 2ÞA
a 2 ix
m þ 4Am þ 2
and
gðaÞ ¼ enm
12a4ðnmÞ Dn
s
a
n
Dm
s
a
m
containing the coefficients
Dn¼ ðn þ2Þðn þ 4Þðn þ6Þ Aa4ix
n þ 8þ6Aa
2
ix a 2 iy
n þ 8
18ðn þ2Þðn þ 4ÞAa2ix þ9ðn þ 2ÞAn þ 4;
Dm¼ ðm þ2Þðm þ 4Þðm þ 6Þ Aa4ix
2
ix a 2 iy
m þ 8
18ðm þ 2Þðm þ 4ÞAa2ix
Here M is the atomic mass, An, Am, Aa2ix
n , Aa2ix
m are the structural sums
of the given crystal
From Eqs (3), (5)–(7) we obtain the equation of state for crystals
at zero temperature as
Pv ¼ c1
s
r
m
c2
s
r
n
þ c3ðs=aÞnc4ðs=aÞm
ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
c5ðs=aÞnc6ðs=aÞm
containing the coefficients
c1¼An enm 6ðnmÞ ; c2¼Am
enm 6ðnmÞ;
c3¼1 a
_
4 ffiffiffiffiffi M p ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffie nm 2ðnmÞ
r
ðn þ2Þ ðn þ2ÞAa2ix
n þ 4An þ 2
;
c4¼1 a
_
4 ffiffiffiffiffi M p
ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffienm 2ðnmÞ
r
ðm þ2ÞAa2ix
m þ 4Am þ 2
;
c5¼ ðn þ 2ÞAa2ix
n þ 4An þ 2; c6¼ ðm þ 2ÞAa2ix
Solving Eq (11) using the given parameters n, m, e and s
(Table 1) we get the nearest neighbor distance a(P,0) Substituting the obtained a(P,0) in Eqs (7), (9), we find the quantities K(P,0),
g(P,0) at pressure P and temperature T¼0 K
In SMM the nearest neighbor distance a(P,T) between the two immediate atoms at pressure P and temperature T can be defined as
a P,Tð Þ ¼a P,0ð Þ þy0ðP,TÞ: ð13Þ Hence, in order to calculate a(P,T) of Eq (13) using the obtained a(P,0) we substitute the obtained K(P,0), g(P,0) in the following expression for the thermally induced lattice expansion[12,16]
y0ðP,TÞ ¼
ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
2gðP,0Þy2
3K3ðP,0ÞAðP,TÞ
s
where
AðP,TÞ ¼ a1þg2ðP,0Þy2
K4ðP,0Þ a2þ
g3ðP,0Þy3
K6ðP,0Þ a3þ
g4ðP,0Þy4
K8ðP,0Þ a4,
a1¼1 þZ
2, a2¼
13
3 þ
47
6Z þ
23
6 Z
2
þ1 2
3,
a3¼ 25
3 þ
121
6 Z þ
50
3 Z
2
þ16
3 Z
3
þ1 2
4
a4¼43
3 þ
93
2 Z þ
169
3 Z
2
þ83
3 Z
3
þ22
3 Z
4
þ1 2
5
z ¼_oðP,0Þ
2 , Z ¼ zcothðzÞ, oðP,0Þ ¼
ffiffiffiffiffiffiffiffiffiffiffiffiffiffi KðP,0Þ M
r :
To a good approximation the parallel mean square relative displacement (MSRD) corresponds to the second cumulant
s2¼h!R:ð!ui!u0Þi2
¼ u2
, uiu0
ui hu0i, u2
ð16Þ Here, u0and uiare the atomic displacements of the zeroth and the ith sites from their equilibrium positions, R!is the unit vector at the zeroth site pointing towards the ith site, and the brackets /S denote the thermal average The first two terms on the right-hand side are the uncorrelated mean square displacement (MSD), while the third term is the parallel displacement correlation function
Table 1
Lennard-Jones potential parameters m, n,eandsfor Cu, Kr and Si [13,14]
Trang 3In SMM using the expression of the second-order moment[12]
we obtain the MSD
u2
2
þyA1þy
A1¼1
K 1 þ
2g2
K4 1 þZ
2
ðZ þ 1Þ
From Eqs (14), (16)–(18) we derive the second cumulant or
DWF of crystals at pressure P and temperature T in SMM as
s2ðP,TÞ 4g2ðP,0Þy3
K5ðP,0Þ 1 þ
Z 2
ðZ þ 1Þ þ 2 KðP,0ÞZ: ð19Þ The ACEM [17] has been used in analysis of
temperature-dependent EXAFS data[3,17,19–23] In this model the cumulants
have been calculated using the effective atomic interaction potential
jeffðxÞ 1
2keffx þ k3x3þ ¼jðxÞ þX
i a j
j m
Mi
^
R12U ^Rij
, ð20Þ
where x equals either rr0 for Morse potential or r–s for (L-J)
potential, keff is effective spring constant and k3 is the cubic
anharmonicity parameter This model has been defined as an
oscillation of a single bond pair of atoms with masses M1and M2
(e.g., absorber and backscatterer) in a given system Their oscillation is
influenced by their neighbors In the center-of-mass frame of this
bond, the model is defined further by the second equation, here
m¼M1M2=ðM1þM2Þ is reduced mass, ^R is the bond unit vector,
the sum i is over absorber (i¼ 1) and backscattering atom (i¼ 2), and
the sum j is over all their nearest neighbors, excluding absorber
and backscatterer themselves whose contributions are described by
the termj(x)
Our development in this work is the derivation of pressure
dependence of the effective spring constant keff, the correlated
Einstein frequency oE and temperature yE and the cumulants
starting from the definition of Gr ¨uneisen parameter
gG¼ @lnoE
This parametergGdepends on volume which, in turn, depends
on pressure With a slight modification of the formula found in
Refs.[18,24], the simplest parameterization of the volume
depen-dence for crystals[6]can be written as
gGðVðPÞÞ
VðPÞ ¼
gGðV0Þ
V0
where the subscript 0 indicates zero pressure
From Eqs (21), (22) we derive pressure dependence of the
correlated Einstein frequencyoEand temperatureyEas
oEðVðPÞÞ ¼oEðV0Þexp gGðV0Þ 1VðPÞ
V0
, yEðVðPÞÞ ¼_oEðVðPÞÞ
kB
, ð23Þ
VðPÞ
V0
¼a3ðP,TÞ
where a(P,T) is calculated by Eq (13)
Using these results, we obtain the pressure dependence of the
effective spring constant as
keffðVðPÞÞ ¼mo2ðVðPÞÞ: ð25Þ
From Eqs (23)–(25) we derive the EXAFS DWF of crystals as a
function of pressure P at a given temperature T
s2ðP,TÞ ¼s2ðVðPÞÞ1 þ zðVðPÞ,TÞ
1zðVðPÞ,TÞ,
s2ðVðPÞÞ ¼ _oEðVðPÞÞ
2keffðVðPÞÞ,zðVðPÞ,TÞ ¼ exp yEðVðPÞÞ=T
: ð26Þ
Making use of quantum statistical methods[25]the expressions for the 1st cumulantsð1Þ and the 3rd cumulant sð3Þ have been derived as the functions of pressure P at a given temperature T
sð1ÞðP,TÞ ¼sð1Þ0 ðVðPÞÞ1 þ zðVðPÞ,TÞ
1zðVðPÞ,TÞ, sð1Þ0 ðVðPÞÞ ¼ f1ðs2ðVðPÞÞÞ, ð27Þ
sð3ÞðP,TÞ ¼sð3Þ
0 ðVðPÞÞ3ðs2ðVðPÞ,TÞÞ22ðs2ðVðPÞÞÞ2
ðs2ðVðPÞÞÞ2 ,
sð3Þ
0 ðVðPÞÞ ¼ f3ðs2ðVðPÞÞÞ, ð28Þ
wheresð1Þ
0 ðVðPÞÞ,s2ðVðPÞÞandsð3Þ
0 ðVðPÞÞare pressure-dependent zero-point contributions to the 1st, 2nd and 3rd cumulants, respectively They are described by the functions of the zero-point contribution to the 2nd cumulants2ðVðPÞÞwith explicit form depending on crystal structure and on our using Morse or (L-J) potential
The pressure-dependent EXAFS can be calculated using Eq (1) with the above obtained pressure-dependent DWF and cumulants
3 Numerical results and discussions
Now we apply the expressions derived in previous section to numerical calculations for metal Cu, crystal Kr and semiconductor
Si The (L-J) potential parameters of Cu, Kr and Si are given in
Table 1 Morse potential parameters have the values D ¼0.3429 eV,
a¼1.3588 ˚A 1 for Cu taken from Ref [26], and D ¼0.9956 eV,
a¼1.3621 ˚A 1for Si calculated by our generalizing the method for the cubic crystals[26]to diamond structure These Morse potential parameters were obtained using experimental values of the energy
of sublimation, the compressibility and the lattice constant The pressure dependence of DWF, i.e., the MSRD or the second cumulants2(Fig 1) and the MSD u2(Fig 2) for crystal Kr at 300 K has been calculated by the ACEM and by the SMM using (L-J) potential Both methods provide similar results where the values fors2 (Fig 1) calculated by the present theory agree well with experiment[7,8]and with the other theoretical values calculated
by the MC simulation[7]and by the Loubeyre’s model (private communication)[8] Our calculated results for MSD (Fig 2) agree well with those calculated by the MC simulation [7] Fig 3
illustrates the pressure dependences2ðPÞs2ð0Þ for Cu at 300 K calculated by the ACEM using Morse potential and by the SMM using (L-J) potential The calculated results of both methods for
Fig 1 Pressure dependence of MSRD ors2 of Kr calculated by ACEM and SMM
Trang 4DWF are also similar and found to be in a good agreement with
those calculated by the correlated Debye model[6] and by the
model 2 for calculation of the moments of the nearest neighbor
distance distribution from an expansion to third order of the
potential energy [6] Fig 4 shows the pressure dependence
s2ðPÞs2ð0Þ for Si at 300 K calculated by the ACEM using Morse
potential and by the SMM using (L-J) potential They have the form
similar to those for Cu but with lower values.Fig 5demonstrates
the pressure dependence of our calculated pressure induced
change in the 1st shellDr for Cu.Fig 6illustrates our calculated
pressure dependencesð3Þð ÞP sð3Þð Þ0 for the 3rd cumulant of Cu at
300 K compared to the results calculated by the methods P3 and P4
[6] Since the experimental pressure-dependent EXAFS data of Cu is
not yet available, we compared our by FEFF[10]code simulated
EXAFS spectrum of Cu (Fig 7) for the 1st shell in single scattering
and its Fourier transform magnitude (Fig 8) at 10 GPa using our
calculated pressure-induced change in the 1st shellDr¼0.041 ˚A
(Fig 4) to those usingDr ¼0.05 ˚A taken from XRD[11]and to the
Fig 2 Pressure dependence of MSD u 2 of Kr calculated by ACEM and by SMM using
(L-J) potential compared to MC simulation [7]
Fig 3 Pressure dependences2 ðPÞs2 ð0Þ of Cu calculated by ACEM using Morse
potential and by SMM using (L-J) potential compared to Debye [6] and model 2 [6]
results.
Fig 4 Pressure dependences2 ðPÞs2 ð0Þ of Si calculated by ACEM using Morse potential and by SMM using (L-J) potential.
-0.045 -0.04 -0.035 -0.03 -0.025 -0.02 -0.015 -0.01 -0.005 0
P (GPa)
Cu
Fig 5 Pressure dependence of calculated pressure-induced change in the 1st shell
Dr ¼ rðPÞrð0Þof Cu.
Fig 6 Pressure dependencesð3Þ ðPÞsð3Þ ð0Þ calculated by ACEM using Morse and
Trang 5results at P¼0 The EXAFS amplitude and the peak height of its
Fourier transform magnitude increase, the phase of EXAFS is shifted
to the right, and the position of its Fourier transform magnitude is
shifted to the left as the pressure increases.Figs 7 and 8show a
reasonable agreement of our calculated results with those obtained
from the XRD A small discrepancy in Dr of 0.009 ˚A may be
tentatively attributed to neglecting many-body effects in the Morse
and (L-J) potentials used in our theory while XRD is
three-dimensional technique
4 Conclusions
In this work a formalism based on our further development of the
ACEM and SMM using Morse and (L-J) potentials for investigation of
the pressure effects in cumulants including DWF and in EXAFS has been developed Both methods provide similar results for the pressure dependence of DWF
Our development is establishing and solving equation of state to get the pressure dependence of the lattice bond length, and then is the derivation of the analytical expressions of pressure dependence for the 2nd cumulant or DWF, as well as for the 1st and 3rd cumulants, the effective spring constant, the correlated Einstein frequency and temperature
The good agreement of our calculated results of the pressure-dependent DWF for Kr and Cu with experiment and other theore-tical values; the reasonable agreement of our simulated EXAFS spectrum of Cu and its Fourier transform magnitude with those using experimental XRD data; as well as the significant increase in the height and the shifting of simulated EXAFS amplitude of Cu and its Fourier transform magnitude under pressure increase denote a further step of applying the ACEM and SMM to reproduction of the pressure-dependent experimental DWF and to description of the pressure effects in EXAFS
Acknowledgements
The authors thank J.J Rehr, P Fornasini and M Vaccari for useful comments This work is supported by the research project QGTD.10.02 of VNU Hanoi and in part by the research project
no 103.01.09.09 of NAFOSTED; one of the authors (V.V.H.) acknowledges the partial support of the research project no 103.01.2609 of NAFOSTED
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Fig 7 Pressure dependence of EXAFS of Cu simulated by FEFF [10] using our
calculated 2nd, 3rd cumulant,Dr ( Fig 5 ) andDr of XRD [11]
Fig 8 Fourier transform magnitudes of pressure-dependent EXAFS of Cu of Fig 7
... FEFF[10]code simulatedEXAFS spectrum of Cu (Fig 7) for the 1st shell in single scattering
and its Fourier transform magnitude (Fig 8) at 10 GPa using our
calculated pressure- induced... (L-J) potentials for investigation of
the pressure effects in cumulants including DWF and in EXAFS has been developed Both methods provide similar results for the pressure dependence of... significant increase in the height and the shifting of simulated EXAFS amplitude of Cu and its Fourier transform magnitude under pressure increase denote a further step of applying the ACEM and SMM