Converse magnetoelectric effect in PZT/NiFe/CoFe nanocomposites Nguyen Thi Minh Hong, Nguyen Huu Duc and Pham Duc Thang* Laboratory for Micro and Nanotechnology, Faculty of Engineering
Trang 1Converse magnetoelectric effect in PZT/NiFe/CoFe nanocomposites
Nguyen Thi Minh Hong, Nguyen Huu Duc and Pham Duc Thang*
Laboratory for Micro and Nanotechnology, Faculty of Engineering Physics and Nanotechnology, University of Engineering and Technology,
Vietnam National University, Hanoi, Building E3, 144 Xuan Thuy, Cau Giay, Hanoi, Vietnam Email: hongntm@vnu.edu.vn
Email: ducnh@vnu.edu.vn Email: pdthang@vnu.edu.vn
*Corresponding author
Abstract: Magnetoelectric effect has attracted considerable interest due to the
promising approach towards novel spintronics device In this work, we study the converse magnetoelectric properties of PZT/NiFe/CoFe nanocomposites
in which the piezoelectric substrate is transversely polarised and the thickness
of the NiFe layer is varied In these structures, the magnetic behaviour significantly changes under an applied voltage thanks to magnetoelectric coupling between the layers By changing the NiFe thickness, this change in magnetisation reaches up to 245% at low bias magnetic field Besides, the investigation of voltage controlled magnetisation switching is expounded
These results are discussed in term of a stress-induced anisotropy field model and magnetoelectric coupling between two phases
Keywords: nanocomposites; magnetoelectric effect; voltage induced
magnetisation
Reference to this paper should be made as follows: Minh Hong, N.T., Duc,
N.H and Thang, P.D (2013) ‘Converse magnetoelectric effect in PZT/NiFe/
CoFe nanocomposites’, Int J Nanotechnology, Vol 10, Nos 3/4, pp.206–213
Biographical notes: Nguyen Thi Minh Hong is working as the researcher at
the Laboratory for Micro and Nanotechnology and the Faculty of Engineering Physics and Nanotechnology, University of Engineering and Technology, Vietnam National University (VNU) in Hanoi, Vietnam She obtained her MSc degree in Electromagnetic Physics from the University of Natural Science, VNU At present, she is pursuing PhD programme and her current research interests are in the field of nanomagnetics, multifferroics and micro-nano ferroelectrics
Nguyen Huu Duc obtained his PhD degree in Physics from the University of Hanoi in 1988 He has received the French Habilitation (DHR) in Physics at the Joseph Fourier University of Grenoble in 1997, became a full professor of the VNU in 2004 and professor of merit in 2008 He serves as the head of the Laboratory for Micro and Nanotechnology at University of Engineering and Technology, VNU He extended his research on various aspects of magnetism
He is author of 100 scientific papers in various international journals and of
Trang 2five monographs published in recent volumes of the Handbook of Magnetic
Materials and the Handbook on the Physics and Chemistry of Rare Earths
(Elsevier Science Publisher)
Pham Duc Thang obtained the PhD degree in Experimental Physics from the University of Amsterdam in 2003 From 2003 to 2006 he worked as a postdoctoral researcher at the University of Twente In 2006 he joined the University of Engineering and Technology, VNU as a research staff at the Faculty of Engineering Physics and Nanotechnology He became an associate professor of the university in 2011 His current research interests are focused
on nanostructured magnetic materials, functional ferroelectrics, piezoelectrics and multiferroics, micro-nano fabrication and devices
This paper is a revised and expanded version of a paper entitled ‘Converse magnetoelectric effect in PZT/NiFe/CoFe nanocomposites’ presented at the
‘3rd International Workshop on Nanotechnology and Application (IWNA’2011)’, Vung Tau, Vietnam, 10–12 November 2011
1 Introduction
The magnetoelectric effect can be classified as direct magnetolectric effect (DME) and converse magnetoelectric effect (CME) that are characterised as magnetic field induced polarisation and electric field induced magnetisation, respectively [1] To date, most of the published papers are devoted to investigations of the DME effect However, there are only several works, reporting on the CME effect in the recent years For data storage applications, it is indeed both physically interesting and technologically important to quantitatively characterise the CME effect Thus, the multiferroic materials, which include single phase magnetoelectric system and two phase magnetoelectric system, are studied widely to obtain large CME effect [2–5] In this paper, we investigate the CME effect of PZT/NiFe/CoFe nanocomposites with various NiFe ferromagnetic thicknesses
Besides, the voltage controlled magnetisation switching process will be discussed
In this work, the ferromagnetic layers of NiFe/CoFe were directly grown in sequence by
an rf magnetron sputtering (2000F, AJA International Inc.) on polycrystalline PZT substrate with transverse polarisation (APC-855, American Piezoceramics Inc.) Before deposition, the sputtering chamber was vacuumed to a base pressure of 2×10–7 Torr A power of 50 W and Ar gas pressure of 2.2×10–3 Torr have been used for deposition of NiFe and CoFe In this hybrid structure, sputtering time for CoFe layer is fixed of
30 minutes Meanwhile, thickness of NiFe layer was changed by varying sputtering time from 10, 20, 40 and 60 minutes These samples are denoted as MN13, MN23, MN43 and
MN63, respectively For the structure of the present study, the thickness of NiFe/CoFe is
up to 100 nm and a 500 μm thick PZT substrate is used Finally, a Ta thin layer was
sputtered on CoFe layer to prevent oxidisation for ferromagnetic layers
For electrical measurement, we use silver adhensive glue, electrodes according to the polarisation direction of PZT substrate as the schematic shown in Figure 1 The dimensions of this structure were 5×5 mm2 The magnetic and CME measurements were
Trang 3carried out by using a vibrating sample magnetometer (VSM 7404, Lakeshore) The sample was subjected to an external bias magnetic field and the applied voltage was also varied from –700 V to 700 V using a voltage amplifier Studies on the morphology and crystallographic structure have been analysed in [6]
Figure 1 Geometry and working principle for converse magnetoelectric effect (see online
version for colours)
Electrode
H bias
The magnetisation (M) measured as a function of angle α between the applied magnetic field and film normal direction is shown in Figure 2 for α = 0°, 45° and 90°
One observes that in-plane magnetic anisotropy dominates for all samples due to the contribution of NiFe/CoFe ferromagnetic layers Magnetisation measured along the film plane, MS//, increases when increasing NiFe thickness It reaches a maximum for sample
MN43 (as presented in Figure 3) Meanwhile, coercivity µoHC// has opposite tendency, showing a minimum value for MN43 sample This rule alters coincidental when measuring at various α angles In addition, the anomalous changing of MS// and µoHC// for
MN43 sample indicates that magnetic properties can be optimised by choosing suitable buffer layer thickness It is noteworthy that an optimised thickness ratio of the magnetic and ferroelectric components is a prerequisite for obtaining large CME [7]
Figure 2 Magnetic hysteresis loop of PZT/NiFe/CoFe composites with different NiFe thickness
measured at various angles α (see online version for colours)
-0.0025 0.0000
0.0025
90o
45o
0o
MN13
90o
45o
0o
MN23
90o
45o
0o
-10000 -5000 0 5000 10000
-0.0025 0.0000 0.0025
μo H(Oe)
90o
45o
0o
MN43 -10000 -5000 0 5000 10000
MN63
90o
45o
0o
μo H(Oe)
Trang 4Figure 3 Saturation magnetization MS// and coercivity μ o H C// of samples (see online version
for colours)
0 50 100
μo H C// (t NiFe )
M S// (t NiFe )
tNiFe (minutes)
1500 2000
2500
//(
For study CME, an external voltage (V), varied from –700 V to 700 V, is applied to these samples The experiment is carried out at different magnetic field aligned parallel to sample plane The results, presented in Figure 4, display linear increasing tendency of M(V) curves are observed for all samples That corresponds closely to the ferroelectric hysteresis loop P(V) curve (see in Figure 5) This indicates that elastic stress transferred from piezoelectrics to ferromagnetic layers of NiFe/CoFe, resulted in an increase of magnetisation The change in magnetisation, ΔM, measured at 700 V and 50 Oe are listed
in Table 1 for all samples In the range of applied voltage, the relative change in magnetisation is actually large, up to 245, 220, 170 and 225%, for sample MN13, MN23,
MN43 and MN63, respectively
Figure 4 Dependence of magnetisation on the applied voltage M(V) at different magnetic field
(see online version for colours)
-600 0 600 1200 1800 2400 3000
V(V)
μoH=5 Oe
μoH=50 Oe μoH=200 Oe μoH=1000 Oe μoH=2000 Oe
MN23
-600 0 600 1200 1800 2400 3000
μoH=5 Oe
μoH=50 Oe μoH=200 Oe μoH=1000 Oe μoH=2000 Oe
MN43 V(V)
μoH=5 Oe μoH=50 Oe μoH=200 Oe μoH=1000 Oe μoH=2000 Oe
V(V)
MN63
-600 0 600 1200 1800 2400 3000
μoH=5 Oe
μoH=50 Oe μoH=200 Oe μoH=1000 Oe μoH=2000 Oe
Trang 5Figure 5 Dependence of polarization on the applied voltage of PZT substrate (see online version
for colours)
-0.10 -0.05 0.00 0.05 0.10
2 )
V(V)
Table 1 The magnetisation change ΔM, the relative change in magnetisation ΔM/M and the
magnetisation reversed voltage V rev (taken at 5 Oe)
Furthermore, we observed the magnetisation switching under the applied voltage for each sample At a magnetic field, magnetisation reversal appears at a certain voltage which is called as the magnetisation reversed voltage Vrev (listed in Table 1 for the magnetic field
of 5 Oe) In principle, the application of an electric field can induce a stress and therefore
a change in magnetic moment orientation, thanks to the magnetostriction of the magnetic materials The NiFe layer plays a role in affecting voltage induced magnetisation switching process For MN43 sample, the value of Vrev is larger than that of others and this result also reflects the above mentioned magnetic hysteresis measurements
Figure 6 shows the voltage induced magnetisation susceptibility χVIM measured on sample MN13 at various magnetic field from 5 Oe to 2000 Oe Firstly, χVIM has a positive value at high applied voltage When decreasing applied voltage, χVIM increases to a maximum, then cancels at fixed voltage (magnetisation reversed voltage, Vrev) and finally changes its sign For different magnetic fields, these values are different The higher bias magnetic field is, the higher Vrev requires Consequently, magnetisation switching can be decided by the competition between the bias magnetic field energy and applied electric field energy
Recently, future spintronic devices based on new materials with voltage controllable magnetic properties are very attractive for practical applications because of lower power consumption compared to the present conventional magnetic-controlled counterparts
Through voltage induced stress/strain by the piezoelectric effect, the voltage controllable magnetisation can be realised As shown in Figure 7, the sample MN13 expressed an
Trang 6obvious influence on the magnetic hysteresis loops while applying the voltage along the sample plane It clearly reveals the increases in coercivity, from 63 Oe to 80 Oe (manipulated by 21%) at applied voltage of 600 V
Figure 6 Electric field induced magnetisation susceptibility (χ VIM ) of sample MN13 (see online
version for colours)
-6 -3 0 3 6
χVIM
V(V)
MN13
Figure 7 In-plane magnetic hysteresis loops of sample MN13 at different applied voltage
(see online version for colours)
-0.0010 -0.0005 0.0000 0.0005 0.0010
600V 0V
MN13
The change in coercivity reflects the dependence of magnetoelastic anisotropy in the magnetic layers on stress, originated from out-of-plane lattice distortions in PZT crystal
This dependence can be caused by the following factors: the direction of the stress-induced anisotropy field Hσ regarding that of the external field H; the coercivity mechanism and the contribution to the effective magnetic anisotropy field energy In this case, the analysis uses the Stoner-Wohlfrauth relation between coercivity and stress-induced anisotropy field In order to analyse the effective magnetic anisotropy field we consider first the magnetoelastic energy which is given by [8]:
2
Trang 7where the stress anisotropy constant Kme is expressed as:
me
3 K 2
λ is the average magnetostriction coefficient quantifying the relative length change of the sample between the demagnetised and magnetised states, σ is the induced stress and
θ is the angle between the magnetisation M and the direction of σ (as illustrated in Figure 8) Apparently, Kme>0 favours θ=0° which means the parallel alignment of the magnetisation direction relative to the stress axis, meanwhile Kme<0 favours perpendicular alignment with θ=90° For our samples, PZT substrate has transverse polarisation and NiFe/CoFe ferromagnetic layers have in-plane anisotropy which means the parallel alignment of magnetisation relative to stress axis, thus Kme>0 NiFe/CoFe layers have the magnetostriction coefficient λ>0 and therefore σ>0, indicating the stress
in those layers is tensile This is in accordance with the above increase in magnetisation when changing applied voltage
Figure 8 Scheme of stress-induced magnetic anisotropy for sample with an in-plane easy axis
(see online version for colours)
The effective magnetic anisotropy constant, Keff, of ferromagnetic layer NiFe/CoFe in contact with PZT is the sum of several anisotropy contributions and can be expressed as:
2
NiFe/CoFe
2K
μ
where KV is the volume magnetocrystalline anisotropy constant, the second term is the surface anisotropy with its constant KS for a film thickness of tNiFe/CoFe, the third term is the shape anisotropy which favours an easy in-plane magnetisation, and the last term is the magnetoelastic anisotropy term Besides, we have:
eff
o C
S
2K H M
Substituting equations (2) and (4) into equation (3), one can get the formula of the stress as:
2
NiFe/CoFe
2K
3
σ =
Trang 8Hence, the sign of stress allows us determining if it is compressive or tensile Our recent
study indicates that the sign of stress is positive This can be the main cause of an
increase in magnetisation when applying an external voltage Theoretical work related to these results is under investigation and will be published elsewhere
4 Conclusion
We have presented in this paper the new results on converse magnetoelectric effect in the nanocomposite PZT/NiFe/CoFe A large change in magnetisation induced by voltage has been observed This indicates that the elastic stress transfers from ferroelectric substrate
to ferromagnetic layers Based on the model of stress-induced magnetic anisotropy and the coupling between two phases, we also demonstrate that the stress, which is imposed
by the PZT substrate on NiFe/CoFe layer, is tensile Furthermore, the effect of applied voltage and bias magnetic field on magnetisation switching process is also discussed
These results are promising for future spintronic applications
Acknowledgements
This research was supported by project 103.02.87.09 of the Vietnam National Foundation for Science and Technology Development (NAFOSTED)
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