Accelerometer, 263-5
hybrid, 414-16
MEMS-IDT, 398-412
smart, 422
Acceptor atoms, 28
Acoustic device,
plate mode, 328-30
various types, 316
see also SAW microsensor
Acoustic wave, 380–14
in solids, 320-350
instrumentation, 337-8
Love, 312-14
propagation, 320-1, 325–34
shear horizontal, 311–12
velocity, 311
Actuator,
representation, 228
smart, 419
see also Microactuator
Adhesion problems, 170-1
AGC SAW circuit, 341
AMANDA process, 213-5
Anisotropic wet etching, 118-24
Anodic bonding, 140-3
see also Bonding
Antenna, 365, 413, 433
see also Microantenna
APCVD, 12
APM, 328-30
Application-specific 1C, 62
see also ASIC
Array fibre-optic, 186
ASIC, 62, 112-16
relative costs, 116
technologies, 114
Atomic,
bonding, 40-4
one-electron model, 35
Axle, micro, 214 Avalanche diode, 243-4
see also Diode
AZ-1350J, 20, 75
see also Resist
Bacteria detection, 426 Ball grid array, 111-12
see also Bonding
BCC, 47 BGA, 111-12
see also Bonding
Bio(chemical) microsensor, 280-299 calorimetric, 297-9
classification of, 282 potentiometric, 292-9 resistive, 283-96 Biochip, 438-42 BioMEMS chip, 438-42
Biosensor, see Biochemical microsensor
Bipolar, diode, 80 processing, 73-82 resistor, 81 transistor, 88 BIT characteristics, 82-90 Body-centred cubic, 47 Bonding,
anodic, 140-3 atomic, 40-4 ball grid array, 111-12 covalent, 43
die, 100-1 flip-TAB, 103 ionic, 42 metallic, 43-4 silicon fusion, 138-40
Trang 2Bonding, (Continued)
tape-automated, 101-3
wire, 100-1
Boron etch-stop, 125
see also Etch-stop technique
Bulk micromachining, 117–144
see also Etching
Buried oxide process, 137
Calorimetric gas microsensor, 297-9
Camera, web, 423-4
Cantilever beam,
deflection, 249-51
fabrication, 133-4, 136-7
worked example, 123-4, 133-7
Car, micro, 198
Carbon structure, 48
Carrier concentration, intrinsic, 31
Catalytic-gate MOSFET, 293
see also MOSFET
CB configuration, 86
CC configuration, 86
CCD, 423–4
commercial, 424
CE configuration, 86
Ceramic,
materials, 58
MSL, 197–201
PCBs, 108
Chemical microsensor,
see Bio(chemical) microsensor
Chlorine molecule, bonding, 43
Circuit, SAW oscillator, 342
see also Equivalent circuit
CMOS process, 90-3
SOI, 97–9
Coil, micro, 185
Common-base configuration, 86
see also Transistor
Common-collector configuration, 86
see also Transistor
Common-emitter configuration, 86
see also Transistor
Complex reciprocity relation, 467-75
Conductimetric
bio(chemical) sensor, 282-91
FET 97
Cone, micro, 193
Contact potential,
see Diffusion potential
COP, 20, 75
see also Resist
Coriolis force, 266 Coulombic sensor, definition, 230 Coupled-mode,
model, 477-9 theory for SAWs, 360-4 Covalent bonding, 43
see also Bonding
Coverage, step, 14 Crab-leg flexure, 253-4
see also Microflexure
Crystal, growth, 63-6 puller, 55 structure indices, 45 Crystallinity, 44-9 Cup, micro, 193, 198 Cut-in potential, see threshold voltage CVD, 12, 354
reactor, 64
see also Deposition
Cyanate ester, 106 Cyanobacteria, detection, 425 Czochralski,
puller, 64-5 technique, 54 DCOPA, 20 Depletion capacitance, 84 Deposition,
epitaxial, 68-70 evaporation, 51 homoepitaxy, 57 molecular beam, 57 sputtering, 51–2 vapour-phase epitaxy, 57 Diamond structure, 53 Dichlorosilane, 14 Die bonding, 100–1
see also Bonding
Dielectric properties, PCB materials, 107
see also Material
Diffusion, coefficient, 31 dopant, 30–1 extrinsic, 31 intrinsic, 31 potential, 83 Diode, avalanche, 243-4 bipolar, 80 forward voltage, 237
Trang 3I-V characteristic, 85, 236
PIN, 243-4
p-n, 243–4
Schottky, 243-4
DIP, 100
Dispersion equation, Love wave, 330-3
DNA chip, 441
Donor atom, 28
Dopant, 76
diffusion of, 30–1
silicon, 69
see also Diffusion
Doping,
selective etching, 124-6
semiconductor, 27-33
d-orbitals, 38
Dry etching, 23–7, 134-7
see also Etching
DSE, 124-6
see also Etching
Dual-in-line package, 100
see also Package
Duffin's equation, 261
E coli detection, 436, 438
ECL, 72
EDP, 124
see also Etching
EFAB, 203
Effective electron mass, 28
EGS, 55, 64
Electronic nose, commercial, 427
Electrochemical cell,
2-electrode, 127
3-electrode, 129
4-electrode, 130
etch-stop, 126–31
Electromagnetic spectrum, 241
Electron,
one-electron atomic model, 35
-electron shell interaction, 40
Electronic,
nose, 423-30
tongue, 433
Elements in periodic table, 41
Energy of ionization, 28
E-nose, see Electronic nose
Epitaxial,
deposition, 68-70
growth of silicon, 56-8
see also Deposition
Epoxy, 106
Equivalent circuit, gyroscope, 394 IDT pair, 392 transistor, 96, 98 Error correction, 345 Etchant,
EDP, 124 KOH, 22, 24, 76 reactive ions, 25
see also Etching
Etching, gaseous, 26 doping-selective, 124-6 dry, 23-7, 134-7 electronic materials, 22-7 isotropic, silicon, 118–24 plasma, 158-62
reactive ion, 25 SAW IDT process, 348 SCREAM, 134 wet, 22, 24, 76 Etch-stop technique, 124-34 boron, 125
electrochemical, 126–31
E-tongue, see Electronic tongue
Evaporation of metal, 50
see also Deposition
Evaporator, 51 Extrinsic diffusion, 31 Face-centred cubic, 47 FCC, 47
FET, see Field-effect transistor
Field-effect transistor, 90, 93 channel conductance, 97 characteristics, 93 equivalent circuit, 96, 98 family, 90
model, 96
see also MOSFET
Film properties for oxides, 14 Flats,
definition, 56 wafer, 67 Flexible board PCB, 105-7
see also PCB
Flip TAB bonding, 103
see also Bonding
Flip-chip, bonding, 103-4 MEMS-IDT device, 415
see also Bonding
Trang 4Row microsensor, 268-70
commercial, 270
Folded-flexure, 253-4
see also Microflexure
FPW, 316
see also SAW
Free electrons, 36
Funnel, micro, 191
Furnace,
oxidation, 10
three zone, 12
Gas
chromatograph, 437
commercial sensors, 285
microsensors, 299
Gas-sensitive SOI MOSFET device, 99
g-cell, see Accelerometer
Gear, micro, 214
Geophone, 413
Gripper, micro, 167–70
Growth,
crystal, 63-6
epitaxial, 56-8
molecular beam, 57
Gyrometer, 266-8
equivalent circuit model, 394
SAW, 380-95
SAW-IDT, 363
see also Microgyrometer
Gyroscope, see Gyrometer
Hall,
coefficient, 272-3
effect, 272
plate sensor, 272-3
Hammock flexure, 253-4
see also Microflexure
HCP, 48–9
Heteroepitaxy, 69
Hexagonal close-packed structure, 48-9
HF etching, 127
Homoepitaxy, 69
Hooke's law, 324
Hotplate, micro, 286
HTCC, 109
Humidity sensor, SAW, 376-80
Hybrid,
accelerometers, 414–6
gyrometers, 414–16
technologies, 108-12
TT model, 89 Hydrazine, 125 1C,
package, 102 process performance, 72
see also Package
IDT microsensor, 360-% fabrication, 347-58 IDT-IDT pair, 361 IDT-SAW wireless, 433 measurement, 337-46 model, 392
SAW, 307-8
IH process, 182-4
see also MSL
Implantation of ions, 31–2 Information-processing triptych, 3
Input transducer, see Sensor
Input-output representation, 228 Integrated circuit,
bipolar, 73-82 CMOS, 90-3 Moore's law, 2 SOI CMOS, 97-9 Intelligent sensor, 419-20 Interconnect technologies, 109
see also Bonding Interdigital transducer, see IDT
Interfacing devices, 432 Intermediate frequencies, 371 Intrinsic diffusion, 31
see also Diffusion
Ion implantation, 31–2 Ionic bonding, 42
see also Bonding
lonization energy, 28
IR sensor, 246
see also Radiation microsensor
ISFET, 109 Isotropic etching, 118–24
see also Etching
JFET, 94
see also FET
Josephson junction, 279
see also SQUID
Junction, field-effect transistor, 94 Josephson, 279
Trang 5INDEX 497
Thermocouple, 232-6
see also Diode
Kapton, see Polyimide
Kodak-747, 20, 75
see also Resist
K-shell, 36
Lame constants, 471
Lattice constant, 45
Lens, quadrupole, 439
Lift-off
SAW IDT process, 348
technique, 21–22
Lithography, 15–18
MSL, 173-226
SL, 173
Love,
modes, 330-4
surface acoustic waves, 312–14
see also SAW
LPCVD, 12
see also Deposition
L-shell, 36
LTCC, 109
Magnesium, atomic structure, 44
Magnetic microsensor, 270–280
classification of, 271
diode, 275-7
galvanic, 272-4
resistive, 274-5
transistor, 276
Magnetic quantum number, 36
Magneto-,
diode, 275-7
galvanic effect, 272
galvanic microsensors, 272-4
resistive devices, 274-5
restrictive strain gauge, 277-8
transistor, 275-7
Market,
MEMS, 7
microsensors, 3,4
Mask, formation, 18–19
Mask-projection MSL, 193-7
see also MSL
Mass spectrometer, 436-9
Mass-IH process, 184-8
see also MSL
Material,
ceramic 58-9
electronic, 9-34
mechanical properties, 255 MEMS, 35-59
smart, 419 MBE, 57
see also Deposition
MCM technologies, 108-12
see also Package
Mechanical microsensor, 247-70 acceleration, 263-5
classification, 248 gyration rate, 266-8 pressure, 24, 257-63 strain, 277-8, 367-71 MEMS,
basic architecture, 419 devices, 434-42 definition of, 5 evolution of, 5 market, 7 materials/preparation, 35-59 SAW gyroscope, 380-95
see also MEMS-IDT
MEMS-IDT microsensor, 397-416 acceleration, 398-412
see also MEMS
Mesoporous catalyst, 298 Metal, 49-58
evaporation, 50 nanoporous, 298 oxide gas sensors, 283-96 properties of, 49-50 Metallic bonding, 43-4
see also Bonding
Metallisation, 50-2 Metallurgical-grade silicon, 55 Methane molecule, 44 MGS, 55
Microaccelerometer, 263-5 commercial, 265 hybrid, 414-16 MEMS-IDT, 398-412 smart, 422
Microactuator, gripper, 167–70 linear motion, 151 mirror, 435 made by MSL, 216–18 motor, 159-61 pump, 221–3 SMA, 216 Turbine, 198 Microantenna, 239-40, 245-7, 372
Trang 6Microarray of chemical resistors, 289
Microaxle, 214
Microcalorimetric gas sensor, 297-9
Microcar, 198
Microchromatograph, 437
Microcoil, 185
Microconcentrator, 218–20
Microcone, 193
Microcup, 193, 198
Microelectronic,
process dissipation, 72
technologies, 62–116
Microelectronics history, 1
Microflexure, 251–4
crab-leg, 253-4
folded, 253-4
hammock, 253-4
see also Cantilever beam
Microfluid components,
bioMEMS chips, 438-42
cup, 193, 198
nozzle, 166–70
pipe, 185, 187, 210
titerplate, 442
tube, 191, 193
Microfunnel, 191
Microgear, 214
Microgripper, 167–70
Microgyrometer, 266-8
hybrid, 414-16
resonant, 267
ring, 267
SAW, 380-95
SAW-IDT, 363
Microhotplate fabrication, 286
Microlens, quadrupole, 439
Micromachines,
car, 198
emergence, 7
Micromachining,
bulk, 117–144
bulk vs surface, 111-2
surface, 145-72
see also Etching
Micromirror, 435
Micromotor, 159-61
Micronose, 428
see also Electronic nose
Micronozzle, 166-70
Micropellistor, 297-9
Microphone, condenser, 157–8
Micropillar, 185
Micropipe, 185, 187, 210 Micropump, 221-3 Microsensor, 228-302 bio(chemical), 280-99 evolution of, 2 IDT, 360-96 intelligent, 419-20 magnetic, 270-280 market, 3
mechanical, 247-70 MEMS-IDT, 397-416 optical, 424
pressure, 257-63 radiation, 240-7 SAW, 303-17 SAW IDT fabrication, 347-58 smart, 418-44
strain, 367-72 thermal, 230-40 wireless SAW, 364-6 Microshuttle, 251-4 Microspectrometer, 436-9 Microspiral, 191
Microspring, 198, 210 Microstereolithography, 173-226, ceramic, 197-201
classical, 181
IH process, 182-4 mass-IH process, 184-8 projection, 180, 193-7 scanning, 180
super-IH process, 186-9 two-photon, 189-92 techniques, 6 Microstructure, axle, 214 ceramic, 197-201 coil, 185
cone, 193 cup, 193, 198 flexural, 251-4 funnel, 191 gear, 214 metallic, 202-5 nickel, 210 nozzle, 166-70 pillar, 185 pipe, 185, 187, 210 polymer, 191 shuttles, 251-4 spiral, 191 spring, 198, 210
Trang 7INDEX 499
titerplate, 442
tube, 191, 193
wire, 216
Microtechnologies, standard, 71
see also Bipolar, CMOS
Microtiterplate, 442
Microtube, 191, 193
Microturbine, 198
Microwire, 216
Miller indices, 45
Minimum line width, 17
Mirror, micro, 435
MISCAP gas-sensitive, 292-9
MISFET gas-sensitive, 292-6
MISiC Schottky diode sensor, 295
MMA, see Actuator
Model,
coupled-mode, 360-4, 477-9
cross-field, 392
FET, 96
hybrid-jr, 89
one-electron atom, 35
MOEMS, 434, 436
Molecular beam epitaxy, 57
see also Deposition
Molecule,
chlorine, 43
methane, 44
Monolithic,
mounting technologies, 100
processing, 70-99
Moore's law, 2
MOS processing, 90-3
see also SOI CMOS
MOSFET, 90-3
characteristic, 95
gas-sensitive, 99, 292-9
symbols, 94
worked example, 90-3
Motor, micro, 159-61
Mounting technologies, 100-4
M-shell, 36
MSL, 173-226
ceramic, 197-201
classical, 181
IH process, 182-4
mass-IH process, 184-8
projection, 180, 193-7
scanning, 180
super-IH process, 186-9
two-photon, 189-92 techniques, 6 Multichip modules, 108-111
Nanoporous metal, 298 Navier-Stoke's equation, 327 Network analyzer, 338-9 Neuromorphic chip, 430 Neurone chip, 431 Nose, electronic, 423-30 Nozzle, micro, 166-70
n-p-n transistor characteristic, see also Transistor
n-type semiconductor, 27
OCP, 127 One-electron atomic model, 35 Open-circuit potential, 127 Optical microsensor, 424
Orbitals, see Shell
Oscillator circuit for SAW, 342
Output transducer, see Actuator
Oxidation, 10 Package, DIP, 100 SMT, 100
see also Bonding
Passivating potential, 127 Pattern transfer, 15-22 PBS, 75
PCB, ceramic, 108 dielectric properties, 107 fibre properties table, 105 flexible board, 105-7 plastic moulded, 107 resin properties, 106 solid board, 104-5 technologies, 104-7 PECVD, 12, 354 precursors, 355 unit, 356
see also CVD
PEEK, 214 Pellistor, 297-9 Periodic table, 35, 41 Perturbation analysis, 467-75 PETEOS, 355
PGA, 62
see also Programmable
Trang 8PHET, 131
Photocell, 241-2
Photoconductive device, 241-2
Photopolymerisation, 174– 7
Photovoltaic,
devices, 242-4
electrochemical etch-stop, 131
Piezoelectric,
constitutive equations, 325
effect, 306, 324
Pillar, micro, 185
PIN diode, 243-4
Pipe, micro, 185, 187, 210
PLA, 112
see also Programmable
Plasma etching, 158-62
Plastic moulded PCB, 107
PLD, 113
see also Programmable
PMMA, 20, 75, 333
see also Resist
p-n junction diode, 83
see also Diode
Polycrystalline, structure, 44
Polyimide, 20, 106
Polymer gas-sensitive MOSFET, 294
see also MOSFET
Polysilicon,
beam worked example, 148-51
deposition of, 15
Potential,
diffusion, 83
energy of ionic bonding, 43
open-circuit, 127
passivation, 127
Potentiometric sensor,
bio(chemical), 292-9
definition, 230
PP, 127
PR 102, 20, 75
see also Resist
Pressure microsensor, 24, 257-63
capacitive, 258
commercial, 263
definition, 258
piezoelectric, 258
resonant, 260
SAW, 375-6
smart, 421-2
worked example, 163-5
Price-performance indicator, 4
Principal quantum shells, 36
Printed circuit technologies, 104-7
solid board, 104-5
see also PCB
Printing, projection, 17 proximity, 17 shadow, 17 Processing, bipolar, 73-82 electronic materials, 9-34 monolithic, 70-99 MOS, 90-3 SOI CMOS, 97-9 Programmable, devices, 112-16 gate array, 62 logic arrays, 112 reflectors, 414 Projection printing, 17 MSL, 193-7
see also Printing
Properties of, ceramics & polymers, 465-6 electronic materials, 15 metals, 49-50
semiconductors, 52-8, 464 silicon, 54
Proximity printing, 17
see also Printing
PTAT sensor, 238
see also Temperature
microsensor PTFE, 106 p-type semiconductor, 29 Pulsed potential anodisation, 131 Pump, micro, 221-3
PVC, 106 Pyroelectric device, 244-5 Quadrupole lens, 439 Quantum number, magnetic, 36 table of, 37 Quantum shell, principal, 36 Quartz, 309, 316
Quartzite, 54 Radiation microsensor, 240-7 commercial, 245
IR, 246 materials used, 243 pyroelectric, 244-5 vector representation, 228
Trang 9INDEX 501
Rayleigh wave, 308-11
generalised, 327
Reactive ion etching, 25
see also Etching
Reactor,
CVD, 64
epitaxial, 68
LPCVD, 12
Read-out wireless, 412-14,
see also Wireless
Reflector, 414
see also Mirror
Resin, PCB, properties of, 106
Resist, 18
AZ-1350J, 75
commercial, 20, 75
COP, 75
definition of, 15
Kodak-747, 75
PMMA, 75
PR 102, 75
properties of, 20
spin-casting, 74
Resistive temperature sensor, 231-2
Resistivity of silicon, 234
Resistor, bipolar, 81
Resonant comb-drive actuator, 161-2
RH, see Humidity
RIE, 25
see also Etching
Rotor,
on a centre-pin bearing, 152-4
on a flange bearing, 154-5
Sacrificial layer technology, 145-54
SAW, 320-35
see also Acoustic wave
SAW microsensor,
amplitude measure, 339-40
circuit calibration, 344
coupled-mode theory, 360-4
dependent parameters, 360
frequency, 341
gyration rate, 380-95
humidity sensor, 376-80
introduction, 303-17
Love, 312-14
oscillator circuit, 342
phase measurement, 340
pressure, 375-6
Rayleigh, 308-11
resonator, 388
strain, 367-72 temperature, 239-40, 371-5 SAW-IDT microsensor, 347-53 gyration rate, 363
strain, 370
SAW-R, see SAW resonator
SC, 46 Scanning method, 181-9 Schottky diode, 243-4
see also Diode
SCREAM, 134 Seebeck coefficient, effect, 232 semiconductor, 234-6 Seismic mass, fabrication, 408-12 Semiconductor,
dopants, 76 doping of, 27-33 growth and deposition, 54-8 properties, 52-8
Seebeck effect, 234-6 Sensor,
bio(chemical), 280-99 classification, 228-9 definition of, 3 energy domain space, 228 input-output, 228 magnetic, 270-280 mechanical, 247-70 pressure, 257-63 price-performance indicators, 4 radiation, 240-7
smart, 5 thermal, 230-40
see also Microsensor
Shadow printing, 17
see also Printing
Shape-memory alloy devices, 216 SH-APM, 316
see also SAW
Shear horizontal mode, 328-30, 311-12
see also SAW
Shear sensor, 141-3 Shell, 36
Shippley S-1813, 75
see also Resist
SH-SAW, 311-12
see also SAW
Shuttle, micro, 251-4 Silicon,
boule, growth of, 55 dioxide, deposition, 11
Trang 10Silicon, (Continued)
crystal growth, 54
electron grade, 55
epitaxial growth of, 56-i
fusion bonding, 138-40
Hall coefficient, 272-3
metallurgical grade, 55
neurone, 431
nitride deposition, 11
resistivity, 234
Seebeck effect, 234-6
sources and dopants, 69
table of properties, 54
Silicon micromachining,
bulk, 117-144
surface, 145-72
see also Etching
Simple cubic structure, 46
SiO2 properties, 14
SL, 173
see also MSL
SMA wire, 216
Smart,
accelerometer, 422
actuator, 419
controller, 419
material, 419
mirror, 435
MOEMS, 436
structure, 419
Smart sensor, 418–44
accelerometer, 422
definition, 5
pressure 421-2
types WI, 418
SMT, 100
see also Package
SNP chip, 438-40
SOI CMOS,
devices, 429
processing, 97-9
Space lattice, 45
S-parameter, 404
Spectrometer, mass, 436-9
Spin casting of resist, 18
Spin, total, 36
Spiral, micro, 191
Spring, micro, 198, 210
Sputtering, 51-2
see also Deposition
SQUIDs, 277-80
ST-quartz, 316
Statics, mechanical structures, 249-51 Step coverage, 14
Stereolithography, 173
see also MSL
Straggle, implanted ions, 33 Strain sensor,
magnetostrictive, 277—8 SAW, 367-71
Structure, body-centred, 47 carbon, 48 diamond, 53 face-centred cubic, 47 hexagonal close-packed, 48-9 polycrystalline, 44
simple cubic, 46 zinc-blende, 53 SU-8, 213
see also Resist
Super-IH process, 186-9
see also MSL
Surface acoustic wave, 308–11
see also SAW microsensor
Surface, micromachining, 145-72 mount technology, 100 Synchronous frequency, 307 TAB, 101-3
see also Bonding
Taguchi gas sensor, 283 Tape-automated bonding, 101-3
see also Bonding
TCR, definition, 231 Teflon, see PTFE Telemetry wireless, 366 Temperature microsensor, diode, 236-9
resistive, 231-2 SAW, 239-40, 371-5 table, 233
thermocouple, 232-6 transistor, 236-9 TEOS, 13, 355 Thermal, evaporator, 51 flow sensor, 268-70 oxidation, 10 sensor, 230–40 Thermistor, 232 Thermocouple, 232-6 Thermodiode, 236-9