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Luận văn thạc sĩ optimization of fabrication parameters of barium doped pb zr0 52ti0 48 o3 thin films on ti si substrates using pulsed laser deposition

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Tiêu đề Optimization of Fabrication Parameters of Barium Doped Pb Zr0.52Ti0.48O3 Thin Films on Ti Si Substrates Using Pulsed Laser Deposition
Tác giả Pham Ngoc Thao
Người hướng dẫn PTS. Nguyễn Đức Minh, PGS. TSKH. Vũ Ngọc Hưng
Trường học Hanoi University of Science and Technology
Chuyên ngành Materials Science and Engineering
Thể loại Luận văn thạc sĩ
Năm xuất bản 2013
Thành phố Hà Nội
Định dạng
Số trang 75
Dung lượng 145,85 KB

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32 Figure 2.8 A Polytec MSA-400 micro scanning laser Doppler vibrometer system at IMS Group-Mesat, University of Twente, Netherlandi,...33 Figure 2.9 Schematic view of the measurunent sc

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BỘ GIÁO DỤC VÀ ĐÀO TẠO

TRUONG BAI HOC BACH KHOA HA NOL

Pham Ngoc Thao

TỎI ỨU HÓA QUÁ TRÌNH LÁNG DỌNG MÀNG MÓNG Pb(Zrss;Th4ø)O;

TREN DE TiN/Si SU DUNG PHUONG PHAP BOC BAY XUNG LASER

Chuyên ngành : Khoa hoc va kỹ thuật Vật liệu Điện tử

LUẬN VĂN THẠC SĨ KHOA HỌC

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DEDICATION

‘The work has been carried out in the intemship program at Solutions in Material Science (SolMateS) company, the Netherlands from 1* April to 30" September, 2013 Except where specific references are made, this thesis is

entirely the result of my own work and inchudes nothing that is the outcome of

work done in collaboratiun No part of this work has been or being submitted for

other degree, diploma or qualification at this or other university

Fuschede, Septemibor 2013 Pham Ngoc Thao

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I am deeply indebted to my supervisor Dr, Nguyen Due Minh (ITIMS & SolMates), who gave me a precious opportmnity to the beautiful city-Enschede, The Netherlands-to join this intemship program at SolMateS company I especially wish to (hank him about taking professional guidance, and sharing

cxporio practical work, giving constructive advi

throughout this ressarch and thesis writing

I am very grateful to Dr Matthijn Dekkers (SolMateS) for the long support, encouragement and his suggestions for this thesis, With his help, I have

an opportunity to understand about working in a research enviroment of the commerical company, like SolMateS

Special acknowledgments tw all members of SolMatcS company who created friendly work environment, and gave me encouraging supports Their interest, and hard working to the work impress me so utuch It is my honor to work with all of them, Dear Nicolas, thanks for your great support and kindness Shared office with you is my pleasure Dear Saskia and Francis, ] want to say thank to both of you for administration assistance Dear Jan, T have really cujoyed tins we spant togetlior in talking about the ships and Duteh culture Doar 8ieven, thanks for your wanu frindship

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CONCLUSION AND SUGGESTION FOR FUTURE WORK 64 5.1 Cortlusion „64 5.2 Suggestions for future works 65

vii

Trang 5

2.2 Thin film growth:

2.2.1 General techniques for fabrication

2.2.2 Pulsed laser deposition (PLD) on ni i

2.4.4 Mechanical characterizalion cà chnihiieeeeirriee

2.3 SUMMIT eee cài

Trang 6

Figure 2.3: Flow diagram for process of P7T film capauitors, 3

Figure 2.4: The PANAIydcal %Đert PRO system to identify phases of a crystalline material al IMS) Group-Mesal, University of Twente, Netherlands _— "¬—.-

Figure 2.5: A construction of SEM Tran re - 30

Figure 2.6: Ferroelectric polarization (PE) hysteresis loop ofa PBZT thin film

Figure 2.7: The typical sienal of ntigue exoilation 32

Figure 2.8 A Polytec MSA-400 micro scanning laser Doppler vibrometer system at IMS Group-Mesat, University of Twente, Netherlandi, 33

Figure 2.9 Schematic view of the measurunent sct-up for the dạ; COPHECIENE es ceeesssesteesesseessesecssanieessanaeesse Ö34

Figure 3.5; (2) The SEM image of external failure; (b) The fatigue behavior of PUPBZT/LIN capacitor at 400 kV/om applied field at $65 °C temperature The insets show the electric field as a funtion of switching cyCles, cuseesnmendl

Trang 7

Figure 2.3: Flow diagram for process of P7T film capauitors, 3

Figure 2.4: The PANAIydcal %Đert PRO system to identify phases of a crystalline material al IMS) Group-Mesal, University of Twente, Netherlands _— "¬—.-

Figure 2.5: A construction of SEM Tran re - 30

Figure 2.6: Ferroelectric polarization (PE) hysteresis loop ofa PBZT thin film

Figure 2.7: The typical sienal of ntigue exoilation 32

Figure 2.8 A Polytec MSA-400 micro scanning laser Doppler vibrometer system at IMS Group-Mesat, University of Twente, Netherlandi, 33

Figure 2.9 Schematic view of the measurunent sct-up for the dạ; COPHECIENE es ceeesssesteesesseessesecssanieessanaeesse Ö34

Figure 3.5; (2) The SEM image of external failure; (b) The fatigue behavior of PUPBZT/LIN capacitor at 400 kV/om applied field at $65 °C temperature The insets show the electric field as a funtion of switching cyCles, cuseesnmendl

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1.1, Introduction - 1

1,2, Ferrodlectricity sessseenensnenimrentntnnentunnnentienesniinnmsnnsl

13 Lead Zizconate Titanate PO(Zr,Tiy JO; (PET) vsssenneninsnnenenesnmineenen

1.3.1 Cryst8l struftre seo

1⁄4 Approaches to improve the properics of PZT thửn ñlms L3

14.1 Doping, ào

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CHAPTER 3

OPTIMIZATION OF DEPOSITION TEMPERATURE

3.1 Introduction

3.2, Structure and morphology u.ssnisneneninnenenascuveeenianeenianeie

3.3, Bleettical property sssssessessseesossssssrseseersesseassnersenreersenieeeneerseeisenensen

3.3.1 Ferroelectric properties

3.3.1.1 Ilysteresis loops

kh nh

3.3.1.3 Effect of applied field eccrine

3.3.2 Diclcctrie propcTfics co

4.3.1 Eerroelectrio pT0perliex à nan Hung

4.3.1.1.Hysferesis ÏoGPS, ào ninreiereiereierreer

4.3.1.3 Fatiguc bchavior cnniieierereriririrrie

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LIST OF FIGURES

Figure IJ: Schematic diagram of the phase transition in a ferroelectric

Figure 1.2 The formation of 180° and 90° fauelectic domain walls in a

(clragonal perovskite ferroclectric, Ey depolarizing field, P,: spontancous

polarization - 3 Figure 1.3: 1iystsresis loop and domain switcứng 3 Figure 1.4: Schematic illustration of the poling process 5 Figure 1.5; Schematic ofcubio ABO; perovskii 3 Figure 1.6: Phase diagram PZT solid soluion ccocveooceouỔ Figure 1.7: Axes including nonmal (1-3) and shear đirections (4-6) L0

Figure 18: (@) Capacitor and cantilever structures, 3D-upward displaeoruenls

of (b) capacitor and (c) cantilever, The LDV measurements were performed 11

Figure 1.9: ‘The exwupls of the relationship between dielectric constant, dss

ooeflicient and Z1/Tï ratto of PZT fiÌns - sold

Figure 1.10: (a) The dpondsnce of 2P, values af PZT filins as a function of the thicknesses of LNO bulfer layers; (0) The dysvalues of PZT films as # fimetion of the thicknesses of LNO buffer lay©Ti neo

Figure 1.11; The chapter structure of thesis The main achicvements of cach chapter are summarized below the tifles ocsoocve 18

Figure 2.1: (@) Flow diagram for the P27 thin film was deposited by Sol-gel processing; (b) The HRSEM of P7T thin Bhú - m1 Figure 2.2: A schematic construction of PLD system, 25

viii

Trang 11

CONCLUSION AND SUGGESTION FOR FUTURE WORK 64 5.1 Cortlusion „64 5.2 Suggestions for future works 65

vii

Trang 12

CHAPTER 3

OPTIMIZATION OF DEPOSITION TEMPERATURE

3.1 Introduction

3.2, Structure and morphology u.ssnisneneninnenenascuveeenianeenianeie

3.3, Bleettical property sssssessessseesossssssrseseersesseassnersenreersenieeeneerseeisenensen

3.3.1 Ferroelectric properties

3.3.1.1 Ilysteresis loops

kh nh

3.3.1.3 Effect of applied field eccrine

3.3.2 Diclcctrie propcTfics co

4.3.1 Eerroelectrio pT0perliex à nan Hung

4.3.1.1.Hysferesis ÏoGPS, ào ninreiereiereierreer

4.3.1.3 Fatiguc bchavior cnniieierereriririrrie

Trang 13

CHAPTER 3

OPTIMIZATION OF DEPOSITION TEMPERATURE

3.1 Introduction

3.2, Structure and morphology u.ssnisneneninnenenascuveeenianeenianeie

3.3, Bleettical property sssssessessseesossssssrseseersesseassnersenreersenieeeneerseeisenensen

3.3.1 Ferroelectric properties

3.3.1.1 Ilysteresis loops

kh nh

3.3.1.3 Effect of applied field eccrine

3.3.2 Diclcctrie propcTfics co

4.3.1 Eerroelectrio pT0perliex à nan Hung

4.3.1.1.Hysferesis ÏoGPS, ào ninreiereiereierreer

4.3.1.3 Fatiguc bchavior cnniieierereriririrrie

Trang 14

CONCLUSION AND SUGGESTION FOR FUTURE WORK 64 5.1 Cortlusion „64 5.2 Suggestions for future works 65

vii

Trang 15

T would like 10 thank sincerely to all the tenchers who taught me al ITTMS such Prof Dr Than Due Hien, Assos, Prof Dr Nguyen Van Hicu, Assoc Prof,

Dr Nguyen Phue Duong, Assoc, Prof Dr Nguyen Anh Tuan, Dr Tran Ngoc Khiem, Dr Nguyen Van Quy Many thanks to ITIMS employees for always supporting me such Dr Thanh, Dr Toan, Dr Ngec Anh, Lr Ha, Ms Loan, Ms Lan, Dr Le, Dr Xuan And thanks go to all members of MEMS group such Dr Thong, Dr Hoang, Dr Lšen, PhD, student Chi, Eng Tai

I would also like to thank all ftiends in ‘The Netherlands: Minh-Giang’s family, Tuan-Iliew’s family, Chung (LvA) Bay (vA), big cat Tom Aarnink (UT), Boota (IT), Nirupam (IT), Kerem (UT) because of your warn and wonderful encouragement to me

Last but not least, I would like to thank to my parents and my sister for their endless love, support, motivations; all of my fiends in Viet Narn for their

friendship

This werk was financially supported by Vietnam National Foundation for Scions and Technology Development (NAPOSTRD) under Grant number 103,02-2011.43, and by the Interreg projcel "Unihealth”,

Fuschede, Septeribor 2013

Pham Ngọc Thao

tii

Trang 16

T would like 10 thank sincerely to all the tenchers who taught me al ITTMS such Prof Dr Than Due Hien, Assos, Prof Dr Nguyen Van Hicu, Assoc Prof,

Dr Nguyen Phue Duong, Assoc, Prof Dr Nguyen Anh Tuan, Dr Tran Ngoc Khiem, Dr Nguyen Van Quy Many thanks to ITIMS employees for always supporting me such Dr Thanh, Dr Toan, Dr Ngec Anh, Lr Ha, Ms Loan, Ms Lan, Dr Le, Dr Xuan And thanks go to all members of MEMS group such Dr Thong, Dr Hoang, Dr Lšen, PhD, student Chi, Eng Tai

I would also like to thank all ftiends in ‘The Netherlands: Minh-Giang’s family, Tuan-Iliew’s family, Chung (LvA) Bay (vA), big cat Tom Aarnink (UT), Boota (IT), Nirupam (IT), Kerem (UT) because of your warn and wonderful encouragement to me

Last but not least, I would like to thank to my parents and my sister for their endless love, support, motivations; all of my fiends in Viet Narn for their

friendship

This werk was financially supported by Vietnam National Foundation for Scions and Technology Development (NAPOSTRD) under Grant number 103,02-2011.43, and by the Interreg projcel "Unihealth”,

Fuschede, Septeribor 2013

Pham Ngọc Thao

tii

Trang 17

Figure 2.3: Flow diagram for process of P7T film capauitors, 3

Figure 2.4: The PANAIydcal %Đert PRO system to identify phases of a crystalline material al IMS) Group-Mesal, University of Twente, Netherlands _— "¬—.-

Figure 2.5: A construction of SEM Tran re - 30

Figure 2.6: Ferroelectric polarization (PE) hysteresis loop ofa PBZT thin film

Figure 2.7: The typical sienal of ntigue exoilation 32

Figure 2.8 A Polytec MSA-400 micro scanning laser Doppler vibrometer system at IMS Group-Mesat, University of Twente, Netherlandi, 33

Figure 2.9 Schematic view of the measurunent sct-up for the dạ; COPHECIENE es ceeesssesteesesseessesecssanieessanaeesse Ö34

Figure 3.5; (2) The SEM image of external failure; (b) The fatigue behavior of PUPBZT/LIN capacitor at 400 kV/om applied field at $65 °C temperature The insets show the electric field as a funtion of switching cyCles, cuseesnmendl

Trang 18

CONCLUSION AND SUGGESTION FOR FUTURE WORK 64 5.1 Cortlusion „64 5.2 Suggestions for future works 65

vii

Trang 19

T would like 10 thank sincerely to all the tenchers who taught me al ITTMS such Prof Dr Than Due Hien, Assos, Prof Dr Nguyen Van Hicu, Assoc Prof,

Dr Nguyen Phue Duong, Assoc, Prof Dr Nguyen Anh Tuan, Dr Tran Ngoc Khiem, Dr Nguyen Van Quy Many thanks to ITIMS employees for always supporting me such Dr Thanh, Dr Toan, Dr Ngec Anh, Lr Ha, Ms Loan, Ms Lan, Dr Le, Dr Xuan And thanks go to all members of MEMS group such Dr Thong, Dr Hoang, Dr Lšen, PhD, student Chi, Eng Tai

I would also like to thank all ftiends in ‘The Netherlands: Minh-Giang’s family, Tuan-Iliew’s family, Chung (LvA) Bay (vA), big cat Tom Aarnink (UT), Boota (IT), Nirupam (IT), Kerem (UT) because of your warn and wonderful encouragement to me

Last but not least, I would like to thank to my parents and my sister for their endless love, support, motivations; all of my fiends in Viet Narn for their

friendship

This werk was financially supported by Vietnam National Foundation for Scions and Technology Development (NAPOSTRD) under Grant number 103,02-2011.43, and by the Interreg projcel "Unihealth”,

Fuschede, Septeribor 2013

Pham Ngọc Thao

tii

Trang 20

Figure 2.3: Flow diagram for process of P7T film capauitors, 3

Figure 2.4: The PANAIydcal %Đert PRO system to identify phases of a crystalline material al IMS) Group-Mesal, University of Twente, Netherlands _— "¬—.-

Figure 2.5: A construction of SEM Tran re - 30

Figure 2.6: Ferroelectric polarization (PE) hysteresis loop ofa PBZT thin film

Figure 2.7: The typical sienal of ntigue exoilation 32

Figure 2.8 A Polytec MSA-400 micro scanning laser Doppler vibrometer system at IMS Group-Mesat, University of Twente, Netherlandi, 33

Figure 2.9 Schematic view of the measurunent sct-up for the dạ; COPHECIENE es ceeesssesteesesseessesecssanieessanaeesse Ö34

Figure 3.5; (2) The SEM image of external failure; (b) The fatigue behavior of PUPBZT/LIN capacitor at 400 kV/om applied field at $65 °C temperature The insets show the electric field as a funtion of switching cyCles, cuseesnmendl

Trang 21

1.1, Introduction - 1

1,2, Ferrodlectricity sessseenensnenimrentntnnentunnnentienesniinnmsnnsl

13 Lead Zizconate Titanate PO(Zr,Tiy JO; (PET) vsssenneninsnnenenesnmineenen

1.3.1 Cryst8l struftre seo

1⁄4 Approaches to improve the properics of PZT thửn ñlms L3

14.1 Doping, ào

Trang 22

2.2 Thin film growth:

2.2.1 General techniques for fabrication

2.2.2 Pulsed laser deposition (PLD) on ni i

2.4.4 Mechanical characterizalion cà chnihiieeeeirriee

2.3 SUMMIT eee cài

Trang 23

2.2 Thin film growth:

2.2.1 General techniques for fabrication

2.2.2 Pulsed laser deposition (PLD) on ni i

2.4.4 Mechanical characterizalion cà chnihiieeeeirriee

2.3 SUMMIT eee cài

Trang 24

T would like 10 thank sincerely to all the tenchers who taught me al ITTMS such Prof Dr Than Due Hien, Assos, Prof Dr Nguyen Van Hicu, Assoc Prof,

Dr Nguyen Phue Duong, Assoc, Prof Dr Nguyen Anh Tuan, Dr Tran Ngoc Khiem, Dr Nguyen Van Quy Many thanks to ITIMS employees for always supporting me such Dr Thanh, Dr Toan, Dr Ngec Anh, Lr Ha, Ms Loan, Ms Lan, Dr Le, Dr Xuan And thanks go to all members of MEMS group such Dr Thong, Dr Hoang, Dr Lšen, PhD, student Chi, Eng Tai

I would also like to thank all ftiends in ‘The Netherlands: Minh-Giang’s family, Tuan-Iliew’s family, Chung (LvA) Bay (vA), big cat Tom Aarnink (UT), Boota (IT), Nirupam (IT), Kerem (UT) because of your warn and wonderful encouragement to me

Last but not least, I would like to thank to my parents and my sister for their endless love, support, motivations; all of my fiends in Viet Narn for their

friendship

This werk was financially supported by Vietnam National Foundation for Scions and Technology Development (NAPOSTRD) under Grant number 103,02-2011.43, and by the Interreg projcel "Unihealth”,

Fuschede, Septeribor 2013

Pham Ngọc Thao

tii

Trang 25

Figure 2.3: Flow diagram for process of P7T film capauitors, 3

Figure 2.4: The PANAIydcal %Đert PRO system to identify phases of a crystalline material al IMS) Group-Mesal, University of Twente, Netherlands _— "¬—.-

Figure 2.5: A construction of SEM Tran re - 30

Figure 2.6: Ferroelectric polarization (PE) hysteresis loop ofa PBZT thin film

Figure 2.7: The typical sienal of ntigue exoilation 32

Figure 2.8 A Polytec MSA-400 micro scanning laser Doppler vibrometer system at IMS Group-Mesat, University of Twente, Netherlandi, 33

Figure 2.9 Schematic view of the measurunent sct-up for the dạ; COPHECIENE es ceeesssesteesesseessesecssanieessanaeesse Ö34

Figure 3.5; (2) The SEM image of external failure; (b) The fatigue behavior of PUPBZT/LIN capacitor at 400 kV/om applied field at $65 °C temperature The insets show the electric field as a funtion of switching cyCles, cuseesnmendl

Trang 26

CHAPTER 3

OPTIMIZATION OF DEPOSITION TEMPERATURE

3.1 Introduction

3.2, Structure and morphology u.ssnisneneninnenenascuveeenianeenianeie

3.3, Bleettical property sssssessessseesossssssrseseersesseassnersenreersenieeeneerseeisenensen

3.3.1 Ferroelectric properties

3.3.1.1 Ilysteresis loops

kh nh

3.3.1.3 Effect of applied field eccrine

3.3.2 Diclcctrie propcTfics co

4.3.1 Eerroelectrio pT0perliex à nan Hung

4.3.1.1.Hysferesis ÏoGPS, ào ninreiereiereierreer

4.3.1.3 Fatiguc bchavior cnniieierereriririrrie

Trang 27

CONCLUSION AND SUGGESTION FOR FUTURE WORK 64 5.1 Cortlusion „64 5.2 Suggestions for future works 65

vii

Trang 28

2.2 Thin film growth:

2.2.1 General techniques for fabrication

2.2.2 Pulsed laser deposition (PLD) on ni i

2.4.4 Mechanical characterizalion cà chnihiieeeeirriee

2.3 SUMMIT eee cài

Trang 29

T would like 10 thank sincerely to all the tenchers who taught me al ITTMS such Prof Dr Than Due Hien, Assos, Prof Dr Nguyen Van Hicu, Assoc Prof,

Dr Nguyen Phue Duong, Assoc, Prof Dr Nguyen Anh Tuan, Dr Tran Ngoc Khiem, Dr Nguyen Van Quy Many thanks to ITIMS employees for always supporting me such Dr Thanh, Dr Toan, Dr Ngec Anh, Lr Ha, Ms Loan, Ms Lan, Dr Le, Dr Xuan And thanks go to all members of MEMS group such Dr Thong, Dr Hoang, Dr Lšen, PhD, student Chi, Eng Tai

I would also like to thank all ftiends in ‘The Netherlands: Minh-Giang’s family, Tuan-Iliew’s family, Chung (LvA) Bay (vA), big cat Tom Aarnink (UT), Boota (IT), Nirupam (IT), Kerem (UT) because of your warn and wonderful encouragement to me

Last but not least, I would like to thank to my parents and my sister for their endless love, support, motivations; all of my fiends in Viet Narn for their

friendship

This werk was financially supported by Vietnam National Foundation for Scions and Technology Development (NAPOSTRD) under Grant number 103,02-2011.43, and by the Interreg projcel "Unihealth”,

Fuschede, Septeribor 2013

Pham Ngọc Thao

tii

Trang 30

T would like 10 thank sincerely to all the tenchers who taught me al ITTMS such Prof Dr Than Due Hien, Assos, Prof Dr Nguyen Van Hicu, Assoc Prof,

Dr Nguyen Phue Duong, Assoc, Prof Dr Nguyen Anh Tuan, Dr Tran Ngoc Khiem, Dr Nguyen Van Quy Many thanks to ITIMS employees for always supporting me such Dr Thanh, Dr Toan, Dr Ngec Anh, Lr Ha, Ms Loan, Ms Lan, Dr Le, Dr Xuan And thanks go to all members of MEMS group such Dr Thong, Dr Hoang, Dr Lšen, PhD, student Chi, Eng Tai

I would also like to thank all ftiends in ‘The Netherlands: Minh-Giang’s family, Tuan-Iliew’s family, Chung (LvA) Bay (vA), big cat Tom Aarnink (UT), Boota (IT), Nirupam (IT), Kerem (UT) because of your warn and wonderful encouragement to me

Last but not least, I would like to thank to my parents and my sister for their endless love, support, motivations; all of my fiends in Viet Narn for their

friendship

This werk was financially supported by Vietnam National Foundation for Scions and Technology Development (NAPOSTRD) under Grant number 103,02-2011.43, and by the Interreg projcel "Unihealth”,

Fuschede, Septeribor 2013

Pham Ngọc Thao

tii

Trang 31

1.1, Introduction - 1

1,2, Ferrodlectricity sessseenensnenimrentntnnentunnnentienesniinnmsnnsl

13 Lead Zizconate Titanate PO(Zr,Tiy JO; (PET) vsssenneninsnnenenesnmineenen

1.3.1 Cryst8l struftre seo

1⁄4 Approaches to improve the properics of PZT thửn ñlms L3

14.1 Doping, ào

Trang 32

LIST OF FIGURES

Figure IJ: Schematic diagram of the phase transition in a ferroelectric

Figure 1.2 The formation of 180° and 90° fauelectic domain walls in a

(clragonal perovskite ferroclectric, Ey depolarizing field, P,: spontancous

polarization - 3 Figure 1.3: 1iystsresis loop and domain switcứng 3 Figure 1.4: Schematic illustration of the poling process 5 Figure 1.5; Schematic ofcubio ABO; perovskii 3 Figure 1.6: Phase diagram PZT solid soluion ccocveooceouỔ Figure 1.7: Axes including nonmal (1-3) and shear đirections (4-6) L0

Figure 18: (@) Capacitor and cantilever structures, 3D-upward displaeoruenls

of (b) capacitor and (c) cantilever, The LDV measurements were performed 11

Figure 1.9: ‘The exwupls of the relationship between dielectric constant, dss

ooeflicient and Z1/Tï ratto of PZT fiÌns - sold

Figure 1.10: (a) The dpondsnce of 2P, values af PZT filins as a function of the thicknesses of LNO bulfer layers; (0) The dysvalues of PZT films as # fimetion of the thicknesses of LNO buffer lay©Ti neo

Figure 1.11; The chapter structure of thesis The main achicvements of cach chapter are summarized below the tifles ocsoocve 18

Figure 2.1: (@) Flow diagram for the P27 thin film was deposited by Sol-gel processing; (b) The HRSEM of P7T thin Bhú - m1 Figure 2.2: A schematic construction of PLD system, 25

viii

Trang 33

2.2 Thin film growth:

2.2.1 General techniques for fabrication

2.2.2 Pulsed laser deposition (PLD) on ni i

2.4.4 Mechanical characterizalion cà chnihiieeeeirriee

2.3 SUMMIT eee cài

Trang 34

LIST OF FIGURES

Figure IJ: Schematic diagram of the phase transition in a ferroelectric

Figure 1.2 The formation of 180° and 90° fauelectic domain walls in a

(clragonal perovskite ferroclectric, Ey depolarizing field, P,: spontancous

polarization - 3 Figure 1.3: 1iystsresis loop and domain switcứng 3 Figure 1.4: Schematic illustration of the poling process 5 Figure 1.5; Schematic ofcubio ABO; perovskii 3 Figure 1.6: Phase diagram PZT solid soluion ccocveooceouỔ Figure 1.7: Axes including nonmal (1-3) and shear đirections (4-6) L0

Figure 18: (@) Capacitor and cantilever structures, 3D-upward displaeoruenls

of (b) capacitor and (c) cantilever, The LDV measurements were performed 11

Figure 1.9: ‘The exwupls of the relationship between dielectric constant, dss

ooeflicient and Z1/Tï ratto of PZT fiÌns - sold

Figure 1.10: (a) The dpondsnce of 2P, values af PZT filins as a function of the thicknesses of LNO bulfer layers; (0) The dysvalues of PZT films as # fimetion of the thicknesses of LNO buffer lay©Ti neo

Figure 1.11; The chapter structure of thesis The main achicvements of cach chapter are summarized below the tifles ocsoocve 18

Figure 2.1: (@) Flow diagram for the P27 thin film was deposited by Sol-gel processing; (b) The HRSEM of P7T thin Bhú - m1 Figure 2.2: A schematic construction of PLD system, 25

viii

Trang 35

CHAPTER 3

OPTIMIZATION OF DEPOSITION TEMPERATURE

3.1 Introduction

3.2, Structure and morphology u.ssnisneneninnenenascuveeenianeenianeie

3.3, Bleettical property sssssessessseesossssssrseseersesseassnersenreersenieeeneerseeisenensen

3.3.1 Ferroelectric properties

3.3.1.1 Ilysteresis loops

kh nh

3.3.1.3 Effect of applied field eccrine

3.3.2 Diclcctrie propcTfics co

4.3.1 Eerroelectrio pT0perliex à nan Hung

4.3.1.1.Hysferesis ÏoGPS, ào ninreiereiereierreer

4.3.1.3 Fatiguc bchavior cnniieierereriririrrie

Trang 36

1.1, Introduction - 1

1,2, Ferrodlectricity sessseenensnenimrentntnnentunnnentienesniinnmsnnsl

13 Lead Zizconate Titanate PO(Zr,Tiy JO; (PET) vsssenneninsnnenenesnmineenen

1.3.1 Cryst8l struftre seo

1⁄4 Approaches to improve the properics of PZT thửn ñlms L3

14.1 Doping, ào

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2.2 Thin film growth:

2.2.1 General techniques for fabrication

2.2.2 Pulsed laser deposition (PLD) on ni i

2.4.4 Mechanical characterizalion cà chnihiieeeeirriee

2.3 SUMMIT eee cài

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