Iec 62132-4-2006.Pdf

Bases de mesure

The minimum electromagnetic immunity level required for an integrated circuit (IC) is determined by the maximum allowable RF disturbance that an electronic system can endure This immunity level varies based on the specific parameters of the system and its application To assess the immunity performance of an IC, a straightforward measurement method and a setup that avoids resonances are essential to ensure a high degree of repeatability The following outlines the foundation of this testing.

La géométrie la plus grande que l’on trouve dans un circuit intégré est la grille de connexion

The connection grid size is typically a few centimeters or smaller, while the dimensions of on-chip structures can be up to two orders of magnitude smaller than the connection grid For frequency ranges below 1 GHz, this connection grid and the on-chip structures are not considered effective antennas for receiving stray RF energy Instead, the cable bundles and/or ribbons of a printed circuit board serve as effective antennas Consequently, an integrated circuit (IC) receives stray RF energy through the pins connected to these cable wires As a result, the electromagnetic immunity of an IC can be characterized by conducted RF disturbances (i.e., direct RF power) rather than field parameters, which is the usual approach in module and/or system testing.

For module and system testing, the direct power supplied to a circuit by cable bundles or ribbons on a printed circuit board (PCB) acting as antennas can be measured or estimated This power is regarded as direct power to the circuit, disregarding any reflections or absorption It has been observed that many integrated circuits (ICs) are particularly susceptible to disturbances during high reflections, as this scenario leads to maximum values of injected RF currents or applied RF voltages To assess an IC's immunity, the direct power required to induce malfunction is measured, with malfunctions classified from A to D based on performance classes defined in IEC 62132-1.

La Figure 1 présente la principale configuration de matériel d’essai avec la commande optionnelle automatique par le PC

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The minimum electromagnetic immunity level for an integrated circuit (IC) is determined by the maximum allowable RF disturbance for the electronic system This immunity level varies based on specific system and application parameters To accurately assess the immunity performance of an IC, a straightforward measurement procedure and a setup that avoids resonances are essential to ensure high repeatability.

The following points out the base of this test

The leadframe is the largest geometry in an integrated circuit, typically measuring a few centimeters or less In contrast, the dimensions of the structures on the chip can be up to two magnitudes smaller than the leadframe For frequencies below 1 GHz, neither the leadframe nor the on-chip structures are considered efficient antennas for capturing unwanted RF energy; instead, it is the cable harness and the traces on a printed circuit board that serve as effective antennas Consequently, an integrated circuit primarily receives unwanted RF energy through these components.

RF energy is transmitted through the pins linked to the wires of specific cables, allowing the electromagnetic immunity of an integrated circuit (IC) to be assessed based on conducted RF disturbances, such as RF forward power, rather than the typical field parameters used in module or system testing.

In module and system testing, the forward power delivered to a circuit can be measured or estimated through the cable harness or the traces on a printed circuit board (PCB), which function as antennas.

This power is recognized as forward power supplied to the circuit, regardless of whether it is reflected or absorbed Many integrated circuits (ICs) are particularly vulnerable to disturbances caused by high reflections, as this situation often leads to injected power issues.

RF currents and applied RF voltages achieve peak values, and to assess an integrated circuit's immunity, the forward power required to induce malfunction is evaluated Malfunctions are categorized from A to D based on the performance classes outlined in IEC 62132-1.

Figure 1 shows the principal test hardware configuration with optional automatic control by the PC

Alimentation en courant continu ou générateur de signaux

Dispositif de surveillance du DEE

Accès d’injection aux fréquences radioéelctriques

Carte de circuit imprimé (PCB) d’essai

Figure 1 – Disposition d’un montage d’essai d’injection directe

The variable RF generator supplies the RF disturbance, which is amplified by the connected RF amplifier A directional coupler and RF power meters are utilized to measure the actual direct power injected into the Device Under Test (DUT) At the RF injection access port, the RF power is delivered to the test printed circuit board (PCB) The RF amplifier is decoupled through direct current filtering to prevent direct current from reaching the amplifier's output Additionally, the direct current supply is safeguarded from RF power by a decoupling network that features high RF impedance on the side connected to the injection.

To monitor the behavior of the DEE, an oscilloscope or a similar monitoring device with acceptance/rejection functions is recommended To decouple the RF signal crosstalk from the low-frequency measurements taken by the oscilloscope, a secondary decoupling network is employed Additionally, the measurement equipment can optionally be controlled by a computer if desired.

Any function within an integrated circuit (IC) can be affected even if it is not connected to the tested pin Therefore, the operating modes of the IC must be selected to ensure that all functions of the IC are utilized during testing.

CI are frequently utilized in various configurations based on their application To understand the impact of each individual pin, it is essential to test each pin that is expected to be exposed to RF disturbance individually Multiple pin testing is permissible in differential mode system pins.

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DC supply or signal generator

Figure 1 – Arrangement of a direct injection test set-up

Injection directe de puissance à une seule broche

For optimal test selectivity, the RF power injected at the RF injection point is directly applied to a single pin of an integrated circuit (see Figure 2) A capacitor can serve as a DC block, while a resistor is used for current limiting By default, the capacitor value is set to 6.8 nF, as specified in IEC 61967-4, and the default resistor value is 0 Ω However, resistor values up to 100 Ω may be selected if functionally required The chosen values for R and C must be documented in the test report.

NOTE Lorsque la résistance série est 0 Ω, chaque entrée ou sortie du DEE est chargée par les 50 Ω du système d’injection de puissance RF

Figure 2 – Illustration du principe de l’injection de puissance à une seule broche

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The forward power needed to cause malfunction of an IC depends on several parameters, like those shown in Table 1

Table 1 – System and IC parameters affecting immunity

IC related parameters Module related parameters

Circuit design Protection of the pin by external components

Chip layout Operation mode of the IC

Ground/supply distribution system inside the IC Ground system Pinning assignment and bond wire design Board layout

Package Impedance of wiring harness and load

Process technology Circuitry connected to a pin

Understanding the immunity of an integrated circuit (IC), defined as the maximum forward power that does not impair its functionality, enables users to determine the necessity and extent of external protection measures required.

4.2 Single pin direct power injection

For optimal test selectivity, RF power is applied directly to a single pin of an IC, as illustrated in Figure 2 A capacitor, typically valued at 6.8 nF according to IEC 61967-4, may serve as a DC block, while a resistor can limit current, with a default value of 0 Ω, though values up to 100 Ω can be selected if necessary It is essential to document the chosen resistor and capacitor values in the test report.

NOTE When the series resistor is 0 Ω, each input or output of the DUT will be loaded by the 50 Ω of the RF power injection system

Figure 2 – Illustration of the principle of the single pin power injection

Injection de puissance directe à broches multiples dans des broches de systèmes de mode différentiel

When at least two pins are utilized to transfer information in differential mode, direct RF power injection through multiple pins can be employed to test the common mode immunity of these analog or digital systems For an illustration, refer to Article B.6, which discusses the CAN bus.

L’essai de broches multiples néglige la dépendance à la phase des effets en mode différentiel

Figure 3 – Illustration du principe de l’injection de puissance à broches multiples

Les conditions générales d’essai sont spécifiées dans la CEI 62132-1 Les conditions d’essais additionnelles sont spécifiées aux paragraphes suivants

The direct power test levels are determined by the application of the Device Under Test (DUT) and the specific pin being tested For an unprotected integrated circuit (IC) pin exposed to continuous wave (CW) RF signals, the maximum direct power level can reach approximately 5 watts.

(37 dBm) Si la broche CI est conỗue pour fonctionner avec une protection extộrieure, alors le niveau de puissance directe maximal peut être diminué (voir les exemples de l’Annexe A)

For the DEE test, users must utilize continuous wave (CW) signals and/or amplitude-modulated (AM) signals By default, an 80% amplitude-modulated signal at 1 kHz is recommended for testing If alternative modulations are employed, they should be noted in the test report.

Lorsqu’un signal AM est utilisé, la puissance de crête doit être la même que pour l’onde entretenue (CW) (niveau d’essai de crête constant, voir l’Annexe C en vue d’informations)

Généralités

Pour cette méthode, le matériel d’essai est spécifié dans la CEI 62132-1 et ci-après

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4.3 Multiple pin direct power injection into pins of differential mode systems

To assess the common mode immunity of analog or digital systems, multiple pin direct RF power injection can be employed when two or more pins are utilized for differential mode signal transmission This method, illustrated in Clause B.6 with a CAN-bus example, overlooks the phase dependence of differential mode effects.

Figure 3 – Illustration of the principle of multiple pin power injection

General test conditions are specified in IEC 62132-1 Additional test conditions are specified in the following paragraphs

The forward power test levels are influenced by the application of the Device Under Test (DUT) and the specific pin being evaluated For an externally unprotected IC pin, the maximum forward power level of a continuous wave (CW) RF signal can reach approximately 5 W (37 dBm) However, if the IC pin is designed with external protection, this maximum forward power level may be reduced, as illustrated in Annex A.

For testing the Device Under Test (DUT), Continuous Wave (CW) and/or Amplitude Modulated (AM) signals, as specified by users, will be utilized The default recommendation for testing is an AM signal at 1 kHz with an 80% modulation depth Any alternative modulation types employed must be documented in the test report.

When an AM signal is used, the peak power shall be the same as for CW (constant peak test level, see Annex C for information)

Test equipment for this method is specified both in IEC 62132-1 and as follows

Source de puissance RF

The RF power source consists of an RF signal generator and an RF power amplifier, designed to deliver sufficient power even under mismatched load conditions It is advisable to use an amplifier with a power capacity exceeding the maximum direct power level required, typically between 10-50 W for a 5 W output The output impedance of the power source should be 50 Ω, with a recommended VSWR of less than 1.2 to effectively absorb reflected waves If the amplifier does not meet this impedance, an attenuator should be installed between the amplifier and the transmission line for proper matching Additionally, the RF power source should maintain a minimum level of spurious emissions.

The amplitude modulation must be feasible, with a power level that is 20 dB lower than the carrier level The maximum power level is contingent upon the application of the DEE and the specific pin being tested.

Mesureur de puissance RF et coupleur directif

The Voltage Standing Wave Ratio (VSWR) of the directional coupler should be less than 1.15 within the applicable frequency range For power measurement during modulation, it is advisable to use a power meter with envelope peak measurement capability.

Généralités

A general test setup is depicted in Figure 1, which includes a power injection and measurement assembly, a DEE on a test PCB, decoupling networks, a DEE monitoring device, and a test control unit Measurement bases are discussed in section 4.1.

Montage d’injection de puissance

Le montage d’injection de puissance est constitué de deux parties La première partie n’est pas sur la carte d’essai Elle comprend

– la source de puissance RF (le générateur RF, l’amplificateur RF, l’atténuateur pour l’adaptation, si nécessaire),

Coaxial cables, RF connectors, and directional couplers with measurement heads for direct power are essential external devices used at the periphery of the DEE test board.

La seconde partie du montage d’injection de puissance est placée directement sur la carte d’essai comme

– le port d’injection RF pour connecter les câbles coaxiaux et la ligne de transmission sur la PCB,

– la connexion de l’extrémité de la ligne de transmission (accès d’injection RF) via le bloc en courant continu au DEE,

– Les réseaux de polarisation en courant continu connectés à la broche en essai

The injection setup typically features a poorly matched termination A significant portion of the power supplied to the DEE may be reflected because a CI does not have a 50 Ω termination By using a dissipative network to match the impedance of the DEE, the measurement would focus on the power dissipated by the matching network rather than the actual power delivered.

The RF power source, comprising an RF signal generator and an RF power amplifier, must deliver adequate power even with mismatched loads It is advisable to select an amplifier with a power capability of 10–50 W, exceeding the maximum forward power level of 5 W The output impedance should be 50 Ω, with a recommended VSWR of less than 1.2 to effectively absorb reflected waves If the amplifier's impedance does not meet this requirement, an attenuator should be used for matching between the amplifier and the transmission line Additionally, the RF power source should maintain spurious emissions at least 20 dB below the carrier level, and it must support amplitude modulation The maximum power level is contingent upon the application of the device under test (DUT) and the specific pin being evaluated.

6.3 RF power meter and directional coupler

The VSWR of the directional coupler shall be less than 1,15 in the applicable frequency range

For the power measurement during modulation, it is recommended to use a power meter with peak envelope measurement capability

The general test setup, depicted in Figure 1, includes a power injection and measurement system, a device under test (DUT) mounted on a test PCB, decoupling networks, a DUT monitoring device, and a test control unit The fundamentals of measurement are elaborated in section 4.1.

The power injection set-up consists of two parts The first part is not on the test board It comprises

– RF power source (RF-generator, amplifier, attenuator for matching if necessary), – coaxial cables,

– RF connectors, – directional coupler with measuring head for forward power, as external devices in the periphery of the DUT test board

The second part of the power injection set-up is placed directly on the testboard as

– RF injection port to connect the coaxial cables and the transmission line on PCB,

– the connection from the end of the transmission line (RF injection port) via the DC block to the DUT,

– DC biasing networks connected to the pin under test

The injection setup experiences a mismatched termination, leading to a significant portion of the power delivered to the Device Under Test (DUT) being reflected This issue arises because the integrated circuit (IC) does not conform to a 50 Ω termination standard.

Using a dissipative network to match the impedance of the Device Under Test (DUT) results in measuring the power dissipation of the matching network instead of the power delivered to the DUT It is crucial to prevent power reflected by the DUT from being reflected back to it due to impedance discontinuities.

The power injection setup not included on the test board must be a 50 Ω system due to an impedance discontinuity elsewhere in the configuration Consequently, this leads to a set of recommended parameters for the test board, the testing setup, and the components associated with the testing configuration.

Carte de circuit d’essai

Using a printed circuit board (PCB) with a common RF ground plane is highly recommended for testing the immunity of integrated circuits (ICs) It is important to place the device under test (DUT) directly on the test board without any support, as most supports introduce significant inductance that can impact the test results (for instance, 10 nH at 1 GHz results in an inductive reactance of XL = 63 Ω).

The primary objective of this standard is to test the immunity of the DEE exclusively Consequently, all external protective components of the DEE must be removed unless it is absolutely necessary to retain these components to ensure the proper function of the circuit (such as filtering capacitors, time constant capacitors, etc.) Mandatory filtering indicates that these components cannot be removed without jeopardizing the correct operation of the circuit.

Mandatory filtering must be directly integrated into the circuit and considered an essential part of it All filtering components required for the application should be grounded on the same ground plane It is important that the return paths of the mandatory filtering components to the DEE or the shielding of a transmission line do not have any gaps.

Condensateur de bloc en courant continu

Signaux de/vers les périphériques Couche:

Assi près que possible de la broche du CI

Accès d’injection aux fréquences radioélectriques (RF)

Figure 4 – Exemple de routage de l’accès d’injection à une broche du DEE

The RF injection connector path to the DC filtering capacitor should utilize a 50 Ω transmission line (refer to Figure 4) It is important that the transmission line's end at the DEE pin is kept as short as possible.

A reasonable target for track length is 1/20 of the shortest wavelength applied, with shorter track lengths being advantageous The ground plane should not have slots in the return paths of RF transport tracks exceeding 1/20 of the shortest wavelength To ensure a reliable ground reference, the impedance between the ground pins of the DEE and the shielding of any transmission line carrying the RF signal should be minimized Therefore, using a ground plane on the PCB to reduce the impedance of ground connections is highly recommended Additionally, RF decoupling should be placed as close as possible to the pin where RF power is injected.

The power injection setup, which is not located on the test board, is designed as a 50 Ω system Consequently, this configuration results in a set of recommended parameters for the test board, the overall test setup, and the associated components.

For effective immunity testing of integrated circuits (ICs), it is highly advisable to utilize a printed circuit board featuring a common RF ground plane The device under test (DUT) should be directly mounted on the test board without sockets, as most sockets introduce considerable inductance that can adversely impact test results; for example, a socket with 10 nH at 1 GHz results in an inductive reactance of \$63 \, \Omega\$.

The primary objective of this standard is to evaluate the immunity of the Device Under Test (DUT) exclusively Consequently, all external protection components must be removed unless they are essential for the integrated circuit's (IC) proper functionality, such as blocking capacitors or timer capacitors These essential components, referred to as mandatory blocking, must be directly attached to the IC and treated as integral parts of it Additionally, all mandatory blocking components should be grounded on the same ground plane, and return paths from these components to the DUT or the shield of a transmission line must be free of slits.

As close as possible to IC pin

Figure 4 – Example of the routing from the injection port to a pin of the DUT

The RF injection port connector's trace to the DC blocking capacitor must be a 50 Ω transmission line, with the trace length to the DUT pin kept as short as possible, ideally at 1/20 of the shortest applied wavelength Shorter trace lengths are preferable Additionally, the ground plane should not feature slits in the return paths of RF traces that exceed 1/20 of the shortest wavelength To ensure a reliable ground reference, it is crucial to maintain low impedance between the DUT ground pin(s) and the shield of any transmission line carrying the RF signal.

To minimize the impedance of ground connections, it is highly recommended to use a ground plane on the PCB Additionally, RF decoupling should be positioned as close as possible to the pin where RF power is injected.

Pour les cas ó il n’est pas possible de suivre ces règles, le montage d’injection de puissance utilisé doit être caractérisé et documenté dans le rapport d’essai.

Caractéristiques du montage d’injection de puissance

To characterize the power injection setup, replace the integrated circuit (IC) with a suitable 50 Ω load and measure the S21 parameter at the RF injection port on the pin pad.

The specified CI in a 50 Ω system requires that the S21 parameter maintains a constant behavior across the utilized frequency range without any resonance, as illustrated in Figure 5 A maximum deviation of 3 dB is permitted.

Figure 5 – Exemple d’un résultat de mesure d’amplitude S 21

For all measurements intended to characterize the power injection setup, it is essential to position all components directly connected to the coupling path, such as the power supply filter or loads, on the printed circuit board (PCB).

Pour la caractérisation du trajet de couplage pour l’injection de puissance pour broches multiples, il convient de mesurer chaque trajet de couplage séparément et de déconnecter les autres pastilles.

Réseaux de découplage

To power the DEE at the pin affected by RF disturbance and to measure its DC performance while RF is applied, a DC bias network must be implemented It is essential that the impedance of this DC bias network at test frequencies is ≥400 Ω (refer to Article B.4 for details) The DC resistance is contingent upon the specific application requirements.

Le réseau de polarisation à courant continu peut être également connecté au trajet d’injection à l’extérieur de la carte de circuit imprimé

To minimize the effects of poor adaptation in both cases, the connection of the high-impedance decoupling direct current polarization network to the injection path should be shorter than λ/20 of the highest test frequency (for instance, less than 15 mm for 1 GHz).

As shown in Figure 1, it is essential to connect additional functional or auxiliary signals through a decoupling network to protect auxiliary equipment The decoupling network should have an impedance of at least 400 Ω.

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For cases where it is not possible to follow these rules the used power injection set-up shall be characterized and documented in the test report

7.4 Characteristics of the power injection set-up

To characterize the power injection setup, substitute the integrated circuit (IC) with a suitable 50 Ω port and measure the S21 parameter from the RF injection port to the designated IC pin pad within a 50 Ω system.

The S 21 parameter must have a constant behaviour over the used frequency range without any resonance (see the example in Figure 5) A maximum deviation of 3 dB is allowed

Figure 5 – Example of a S 21 magnitude measurement result (first resonance above 1 GHz)

For accurate characterization of the power injection setup, it is essential that all components directly connected to the coupling path, such as filters, power supplies, and loads, are integrated onto the PCB.

For characterization of the coupling path for multiple pin power injection, each coupling path should be measured separately and the other pads should be unconnected

To ensure proper operation of the Device Under Test (DUT) during RF application, a DC biasing network is essential for supplying power and measuring DC performance This network must maintain an impedance of at least 400 Ω at the test frequencies to ensure accurate results.

DC resistance depends on the requirements of the application

The DC biasing network may also be connected to the injection path offside the printed circuit board

To reduce the impact of mismatching, the connection from the high impedance decoupling DC-biasing network to the injection path should be kept shorter than λ/20 of the highest test frequency, which is less than 15 mm for 1 GHz.

To protect auxiliary equipment, it is essential to connect other functional or auxiliary signals through a decoupling network This network should maintain an impedance of at least 400 Ω within the test frequency range, which may be achieved using a single resistor depending on the specific application.

Additionally, the coupling and decoupling of RF with functional or auxiliary signals from the DEE can be integrated into a coupling-decoupling network (RCD) This RCD, used for common mode injection in differential mode signal lines, such as an Asymmetric Artificial Network (AAN or T-network), is referenced in CISPR 16-1-2 Depending on the application, the impedance of such a network may deviate from standard values.

≥400 Ω recommandés, mais elle doit être indiquée dans le rapport d’essai Des informations supplémentaires sur les types de RCD figurent dans la CEI 61000-4-6

Généralités

Les méthodes d’essai doivent être conformes aux exigences de la CEI 62132-1 comme suit.

Measurement basics

The minimum electromagnetic immunity level for an integrated circuit (IC) is determined by the maximum allowable RF disturbance for the electronic system This immunity level varies based on specific system and application parameters To accurately assess the immunity performance of an IC, a straightforward measurement procedure and a setup that avoids resonances are essential to ensure high repeatability.

The following points out the base of this test

The leadframe is the largest geometry in an integrated circuit, typically measuring a few centimeters or less In contrast, the dimensions of the structures on the chip can be up to two magnitudes smaller than the leadframe For frequencies below 1 GHz, neither the leadframe nor the on-chip structures are considered efficient antennas for capturing unwanted RF energy; instead, it is the cable harness and the traces on a printed circuit board that serve as effective antennas.

RF energy is transmitted through the pins linked to the wires of specific cables, allowing the electromagnetic immunity of an integrated circuit (IC) to be assessed based on conducted RF disturbances, such as RF forward power, rather than the typical field parameters used in module or system testing.

In module and system testing, the forward power delivered to a circuit can be measured or estimated through the cable harness or the traces on a printed circuit board (PCB) that function as antennas.

This power is recognized as forward power supplied to the circuit, regardless of whether it is reflected or absorbed Many integrated circuits (ICs) are particularly vulnerable to disturbances caused by high reflections, as this can lead to significant issues when power is injected.

RF currents and applied RF voltages achieve peak values, and to assess an integrated circuit's immunity, the forward power required to induce malfunction is evaluated Malfunctions are categorized from A to D based on the performance classes outlined in IEC 62132-1.

Figure 1 shows the principal test hardware configuration with optional automatic control by the PC

Alimentation en courant continu ou générateur de signaux

Dispositif de surveillance du DEE

Accès d’injection aux fréquences radioéelctriques

Carte de circuit imprimé (PCB) d’essai

Figure 1 – Disposition d’un montage d’essai d’injection directe

The variable RF generator supplies the RF disturbance, which is amplified by the connected RF amplifier A directional coupler and RF power meters are utilized to measure the actual direct power injected into the Device Under Test (DUT) At the RF injection access port, the RF power is delivered to the test printed circuit board (PCB) The RF amplifier is decoupled through direct current filtering to prevent direct current from reaching the amplifier's output Additionally, the direct current power supply is safeguarded from RF power by a decoupling network that features high RF impedance on the side connected to the injection.

To monitor the behavior of the DEE, an oscilloscope or a similar monitoring device with acceptance/rejection functions is recommended To decouple the RF signal crosstalk from the low-frequency measurements taken by the oscilloscope, a secondary decoupling network is employed Additionally, the measurement equipment can optionally be controlled by a computer if desired.

Any function within an integrated circuit (IC) can be affected even if it is not connected to the tested pin Therefore, the operating modes of the IC must be selected to ensure that all functions of the IC are utilized during testing.

CI are frequently utilized in various configurations based on their application To understand the impact of each individual pin, it is essential to test each pin that is expected to be exposed to RF disturbance individually Multiple pin testing is permissible in differential mode system pins.

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DC supply or signal generator

Figure 1 – Arrangement of a direct injection test set-up

The RF generator produces a frequency variable RF disturbance, which is then amplified by the connected RF amplifier To measure the actual forward power injected into the device under test (DUT), a directional coupler and RF power meters are utilized at the RF injection port.

RF power is supplied to the test printed circuit board (PCB) through an RF amplifier, which is decoupled by a DC block to prevent DC from reaching the amplifier's output A decoupling network with high RF impedance is utilized to ensure that the DC supply does not interfere with the RF power in the injection path.

To effectively monitor the behavior of the Device Under Test (DUT), an oscilloscope or a similar monitoring device with a pass/fail function is recommended To isolate the RF signal crosstalk from the low-frequency measurements taken by the oscilloscope, a secondary decoupling network is employed Additionally, the measurement equipment can be controlled by a computer for enhanced functionality, if desired.

Any function inside an IC can be affected even if it is not connected to the pin under test

Therefore the operation mode(s) of the IC shall be chosen in a way that all functions of the IC are used during the test

Integrated circuits (ICs) are utilized in various configurations depending on their specific applications To assess the impact of RF disturbances on each pin, it is essential to test each pin individually Additionally, testing multiple pins simultaneously is acceptable for differential mode systems.

La puissance directe nécessaire pour provoquer le dysfonctionnement d’un CI dépend de plusieurs paramètres, comme ceux présentés dans le Tableau 1

Tableau 1 – Paramètres de CI et de systèmes affectant l’immunité

Paramètres liés au CI Paramètres liés au module

Conception de circuit Protection de la broche par des composants externes

Trace des puces Mode de fonctionnement du CI

Système de distribution de l'alimentation et de la masse à l’intérieur du CI Système de mise à la masse

Affectation de brochage et conception de fils de connexion Montage de la carte

Boợtier Impộdance du faisceau de cõbles et de la charge

Technologie de fabrication processus Circuits raccordés à une broche

Single pin direct power injection

For optimal test selectivity, RF power is applied directly to a single pin of an IC at the RF injection port A capacitor, typically valued at 6.8 nF as per IEC 61967-4, may serve as a DC block, while a resistor, usually set at 0 Ω, can limit current; however, values up to 100 Ω can be selected if necessary It is essential to document the chosen resistor and capacitor values in the test report.

NOTE When the series resistor is 0 Ω, each input or output of the DUT will be loaded by the 50 Ω of the RF power injection system

Figure 2 – Illustration of the principle of the single pin power injection

4.3 Injection de puissance directe à broches multiples dans des broches de systèmes de mode différentiel

When at least two pins are utilized for differential information transfer in either analog or digital mode, direct RF power injection through multiple pins can be employed to assess the common mode immunity of these analog or digital systems (refer to Figure 3) For an illustration of a CAN bus, see Article B.6.