Iec 60747 3 2013

IEC 60747 3 Edition 2 0 2013 07 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices – Part 3 Discrete devices Signal, switching and regulator diodes Dispositifs à semiconducteurs – Parti[.]

Signal and switching diodes

3.1.1 forward recovery voltage v FR forward voltage occurring during the forward recovery time after switching from zero or a reverse voltage to a forward current

3.1.2 detector voltage efficiency η v ratio of the d.c load voltage to the peak sinusoidal input voltage under specified circuit conditions

The detector power efficiency, denoted as \$\eta_p\$, is defined as the ratio of the change in direct current (d.c.) power across the load resistance, resulting from the alternating current (a.c.) signal, to the available power supplied by a sinusoidal voltage generator under specific operating conditions.

E PR energy of a pulse of short duration that occurs in a repetitive series of pulses

C tot capacitance at the diode terminals, measured under specified bias conditions

Voltage reference diodes and voltage regulator diodes

3.2.1 voltage reference diode voltage regulator diode where the minimum and maximum voltages are both specified at the same current

3.2.2 working direction direction of current that results when the N-type semiconductor region is at a positive voltage relative to the P-type region

Note 1 to entry: This is also the reverse direction for voltage regulator diodes

3.2.3 regulating range range of working direction currents within which the voltage is maintained between specified limits

I Z current within the regulating range

V Z voltage within the regulating range

3.2.6 differential working resistance r z differential resistance at a working current within the regulating range

3.2.7 temperature coefficient of working voltage α vz the quotient of the change in working voltage between two specified values of temperatures ,and the difference between these two temperatures

Current-regulator diodes

The arrow indicates the flow direction of the regulator current, which moves from the anode to the cathode, known as the forward direction for current-regulator diodes It is important to note that the definitions of forward and reverse directions for a PN junction, as outlined in IEC 60050-521:2002, do not apply in this context.

Figure 1 – Current-regulator diode graphical symbol

V S voltage within the regulating range of a current-regulator diode

Note 1 to entry: “Working voltage” is no longer the preferred term

V L voltage at point I L on the current-voltage characteristic

V K voltage near the lower knee of the current-voltage characteristic

I S current within the regulating range of a current-regulator diode

Note 1 to entry: “Working current” is no longer the preferred term

I L specified current below the regulating range

3.3.7 small-signal regulator conductance g s small-signal conductance within the regulating range of a current-regulator diode

3.3.8 knee conductance g k small-signal regulator conductance at the knee voltage

3.3.9 temperature coefficient of regulator current α IS quotient of the change in regulator current between two specified values of temperature and that change of temperature

Note 1 to entry: The change in regulator current is usually expressed as a percentage of regulator current

Note 2 to entry: “Regulator current” is now used instead of “working current”, which is no longer the preferred term

General

The general rules and letter symbols of IEC 60747-1:2006, Clause 4 apply with the following additions.

Subscripts

List of letter symbols

V (BR) Breakdown voltage v FR Forward recovery voltage

V FRM Peak value of forward recovery voltage

I F Continuous (direct) forward current i F Instantaneous forward current

I R Continuous (direct) reverse current i R Instantaneous reverse current

4.2.2.3 Switching characteristics t fr Forward recovery time t rr Reverse recovery time i rr Reverse recovery current

4.2.2.4 Sundry quantities r Differential resistance η p Detector power efficiency η v Detector voltage efficiency

Subscripts

V nz Noise voltage within the working voltage range (V n is also acceptable if no misunderstanding is possible)

I Z Continuous (direct) reverse current within the working voltage range

I R Continuous (direct) reverse current at a voltage below the working voltage range

4.3.2.3 Sundry quantities r z Differential (working) resistance α vz Temperature coefficient of working voltage (Reserve symbol: S z )

Subscripts

4.4.2.3 Sundry quantities g s Small-signal regulator conductance g k Knee conductance

General

The rules of IEC 60747-1:2006, Clause 5 apply, with the following additions

Voltage and current ratings apply over the rated range of operating temperatures Where such ratings are temperature-dependent, this dependence should be indicated.

Ratings (limiting values)

5.2.1.1 Minimum and maximum storage temperatures ( T stg )

5.2.1.2 Minimum and maximum operating ambient or case temperature ( T a or T c )

5.2.1.3 Maximum continuous (direct) reverse voltage ( V R )

5.2.1.4 Maximum peak reverse voltage ( V RM )

Under specified pulse conditions (for switching diodes)

5.2.1.5 Maximum continuous (direct) forward current ( I F )

5.2.1.6 Maximum peak forward current ( I FM )

5.2.1.7 Maximum total power dissipation ( P tot or P C )

Where thermal resistance is not given in the characteristics, maximum total power dissipation as a function of temperature over the range of operating temperatures shall also be given

5.2.1.8 Any special requirements for ventilation and/or mounting

Characteristics

Maximum value at the maximum continuous (direct) reverse voltage and at a low value of reverse voltage at 25 °C and one higher temperature

Maximum value at the rated maximum continuous (direct) forward current at 25 °C

Minimum value at low value of continuous (direct) forward current at 25 °C

Maximum value at specified low value of reverse voltage at 25 °C; the frequency shall be below that where secondary effects are significant

For switching diodes: maximum value when switching from a specified forward current by the application of specified reverse voltage or current and for specified circuit conditions

For switching diodes: maximum value when switching from a specified forward current by the application of specified reverse voltage or current and for specified circuit conditions See

Recovered charge and reverse recovery time are defined as the duration between the moment the current transitions from forward to reverse (t0) and when the reverse current decreases from its peak value (I RM) to a specified low threshold, ideally 10% of the peak reverse current (tI), or when the extrapolated reverse current reaches zero (trr) This extrapolation is performed using two key reference points, typically at 90% and 25% of the peak reverse current.

Figure 3 – Reverse recovery current waveform

5.2.2.6 Peak forward recovery voltage ( V FRM )

Maximum value (where appropriate) when switching from a specified reverse voltage to a specified forward current

Maximum value (where appropriate), when switching from a specified reverse voltage

(preferably zero) by the application of a specified forward current with a specified rise time between 10 % and 90 %

Forward recovery time is defined as the duration between when the forward voltage increases past a specified initial value, ideally 10% of the final stable value, and when it decreases from its peak value to either a specified second value near the final stable value, preferably 110%, or when the extrapolated forward voltage approaches zero The extrapolation is based on two designated points, typically 90% and 50% of the peak forward voltage.

Figure 4 – Current and voltage waveforms

For diodes specified for use in detector circuits, the following characteristics shall be stated:

Minimum value (for high-level RF detectors) under specified bias conditions at 25 °C The circuit conditions and the frequency of measurement shall also be specified

Minimum value (for low-level RF detectors) under specified bias conditions at 25 °C and at one higher temperature The circuit conditions and the frequency of measurement shall also be specified

Maximum value of noise voltage or current, depending respectively on whether the diode is forward or reverse biased.

5.3.1.2 Minimum and maximum operating ambient or case, temperature ( T a or T c )

5.3.1.3 Maximum continuous (direct) reverse current ( I Z )

5.3.1.4 Maximum continuous (direct) forward current ( I F )

(For diodes intended for operation in the forward conductivity region).

Characteristics

The article discusses the importance of specifying nominal, minimum, and maximum values at designated currents on scales 1, 2, and 5, ideally including either T c or T a along with mounting details Alternatively, it suggests that conditions may be defined at a specified T vj, utilizing a pulse test method in accordance with section 6.2.2.

For voltage-reference diodes, the preferred nominal values of working voltages are shown in

The recommended values for higher voltages are obtained by multiplying the nominal values in Table 1 and Table 2 by 10 It is essential that the specified minimum and maximum limits remain within the ranges indicated in the tables.

Table 1 – Preferred reference diode working voltages – Voltages in the E24 series

Table 2 – Preferred reference diode working voltages – Voltages in the E12 series

5.3.2.2 Differential resistance within the working voltage range ( r z )

Maximum value at the current specified in 5.3.2.1

Maximum value at a recommended minimum operating current

5.3.2.3 Temperature coefficient of working voltage (α vz )

Minimum and maximum values (percent per degree Celsius) at the current specified in 5.3.2.1

If this coefficient varies significantly with the temperature, the variation shall be stated, and the temperatures (preferably junction temperatures) at which the measurements are made shall be specified

Maximum value (where appropriate) at a specified reverse voltage below the minimum working voltage

Maximum value at a specified reverse voltage below the minimum working voltage

Maximum value at the maximum continuous (direct) forward current (where appropriate – for voltage-regulator diodes intended for operation in the forward region)

5.3.2.7 Noise voltage within the working voltage range ( V nz )

Maximum value (where appropriate) under specified conditions of frequency, bandwidth and operating current Where the variation of this characteristic with temperature is significant, this shall be specified.

5.4.1.2 Minimum and maximum operating ambient or case, temperatures ( T a or T c )

5.4.1.3 Maximum total power dissipation at an ambient or case temperature of 25 °C

( P tot ) and a derating curve or derating factor

5.4.1.4 Maximum reverse voltage / Maximum reverse current

Either: a) Maximum reverse (negative anode-cathode) voltage (V R ) or: b) Maximum reverse current (I R )

Characteristics

Minimum and maximum values at a specified operating voltage (V S1 )

Maximum value at the maximum recommended operating voltage (V S2 )

5.4.2.3 Temperature coefficient of regulator current (α IS )

Highest (most positive or maximum) and lowest (most negative or minimum) values at the operating voltage specified in 5.4.2.1 and specified range of T a or T c

5.4.2.4 Regulator current variation / Small-signal regulator conductance

Maximum value for a specified change of V S between two specified values of V S on either side of V S1

Or: b) Small-signal regulator conductance (g s )

Maximum value at V S1 and f = 1 kHz

Maximum value at specified current (I L ), preferably 0,8 I S1 min

Maximum value at specified voltage (V K ) and f = 1 kHz

General

The rules of IEC 60747-1:2006, Clause 6 apply

In particular, IEC 60747-1:2006, 6.2 applies if pulse measurements are used in place of any of the d.c methods specified below In these cases:

– the variable generator is replaced by a pulse generator;

– the voltmeter is replaced by a peak-reading instrument;

– the ammeter is replaced by a peak-reading;

– pulse width and duty cycle (t p , δ) shall be specified Preferably: t p , = 300 às, δ ≤ 2 %.

Reverse current I R

To measure the reverse current of a diode under specified reverse voltage b) Circuit diagram (Figure 5)

Figure 5 –Circuit diagram for the measurement of I R c) Circuit description and requirements

R 1 calibrated resistor (pulse measurement only)

The temperature is set to the specified value

The variable voltage generator is adjusted to obtain the specified value of reverse voltage

The reverse current I R is read from the ammeter A e) Specified conditions

Forward voltage V F

To measure the forward voltage across a signal or switching diode under specified conditions b) Circuit diagram (Figure 6)

Figure 6 –Circuit diagram for the measurement of V F c) Circuit description and requirements

R 1 calibrated resistor (pulse measurement only)

R 2 a high-value resistor d) Measurement procedure

The variable voltage generator is adjusted to obtain the specified value of forward current

The forward voltage V F is read from the voltmeter V e) Specified conditions

– ambient or case temperature (Ta, Tc);

Total capacitance C tot

To measure the total capacitance of a diode under specified conditions b) Circuit diagram (Figure 7)

Figure 7 –Circuit diagram for the measurement for C tot c) Circuit description and requirements

R low conductance resistor compared with the admittance of the diode being measured

C capacitor C able to withstand the reverse bias voltage of the diode and to present a short-circuit at the frequency of measurement d) Precautions to be observed

If the measured capacitance is very small, the mounting conditions will affect the accuracy of the results and they should be specified e) Measurement procedure

To measure the capacitance of the diode, the voltage across it is set to the specified value $ V_R $ After removing the voltmeter from the circuit, the capacitance is determined using an a.c bridge by calculating the difference between the readings with and without the diode in its mounting.

– measurement frequency, if different from 1 MHz;

– mounting conditions of the diode, if necessary.

Forward recovery time t fr and peak forward recovery voltage V FRM

To measure the forward recovery time and the peak forward recovery voltage of the diode b) Circuit diagram (Figure 8)

Figure 8 – Circuit diagram for the measurement of t fr and V FRM c) Circuit description and requirements

G current-pulse generator having a compliance voltage (open-circuit output voltage) of

50 V minimum or three times V FRM , whichever is greater

S electronic switch, which is closed except for a period starting just before the current pulse and throughout its duration

M A and M B oscilloscopes or other monitoring instruments

The pulse duration shall be long enough for the forward voltage to have reached the stable value V F

The pulse duration and the duty cycle of the current-pulse generator should be such that negligible internal heating of the diode occurs d) Measurement procedure

While monitoring the current waveform on M A , the current-pulse source is adjusted to the specified conditions of rise time t r and forward current I FM

The reverse voltage V R is adjusted to the specified value, and switch S is appropriately set

The peak forward recovery voltage (\$V_{FRM}\$) and the forward recovery time (\$t_{fr}\$) are determined from the voltage waveform across the diode on M B, following the specified measurement method.

– rise time of current pulse (t r ) (between 10 % and 90 % of I FM , unless otherwise stated);

– voltages defining the beginning and the end of the forward recovery time, if different from 10 % and 110 %, respectively, of V F ;

Reverse recovery time (t rr) and recovered charge ( Q r)

To assess the reverse recovery time of a diode under specific switching conditions, it is essential to calculate the charge recovered when the diode transitions rapidly from a forward-biased to a reverse-biased state The relevant circuit diagram is illustrated in Figure 9.

Figure 9 – Circuit diagram for the measurement of t rr c) Circuit description and requirements

G 1 current generator supplying the forward current (I F )

SW 1 switch to turn off the diode

A C1 capacitor is essential for delivering a reverse current pulse that is sufficiently large to sustain the reverse voltage across the diode for a minimum of three times the maximum reverse recovery time (\$t_{rr}^{max}\$), while simultaneously allowing a current equal to the sum of \$I_F\$ and \$I_{rr}\$.

( ) max max max min 20 rr rr rr

G 2 voltage generator to provide the specified reverse voltage as measured on V 1

If a peak reverse current (I rr max) is specified:

Set G 2 to V R max and R 3 to V R max/(I F + I rr max)

If the rate of change of current (dI/dt) is specified:

Set L 1 to V R max/(dI/dt) and provide D 1 to clamp the voltage generated by L 1 when the diode being tested turns off d) Measurement procedure

To begin the process, open switch SW 1 and configure G 2 to supply the reverse voltage to the diode, as indicated by V 1 Next, adjust G 1 to establish the forward current (I F), which should be monitored on M 1 After allowing sufficient time for the diode to fully charge, close switch SW 1 The resulting current pulse will then be captured by the measuring instrument M 1.

Reverse recovery time is measured between the two points specified in 5.2.2.5 and recovered charge is calculated between the same two points using one of the following equations:

– Reverse voltage (V R ) or reverse recovery current (I rr max);

– Rate of change of current (dI/dt) (if required);

Detector voltage efficiency η v

To measure the detector voltage efficiency of a signal diode under specified conditions b) Circuit diagram (Figure 10)

Figure 10 – Circuit diagram for the measurement of η v c) Circuit description and requirements

The value of R L should match the output impedance of the generator G The time constant C L R L should be large compared to the reciprocal of the measurement frequency d) Measurement procedure

The generator is adjusted to give the specified r.m.s value of V 1

V 2 is read from the voltmeter and the detector voltage efficiency is calculated using the expression:

Detector power efficiency η p

To measure the detector power efficiency of a signal diode under specified conditions b) Circuit diagram (Figure 11)

Figure 11 – Circuit diagram for the measurement of η p c) Circuit description and requirements

The transformer should have a low loss, and the equivalent value of the loss resistance should be included in R g

The turns ratio of the transformer should be such as to ensure impedance matching between R g and R L

For optimal performance, the resistance $ R_L $ should be significantly higher than the forward impedance of the diode Additionally, the time constant $ C_L R_L $ must be considerably larger than the inverse of the measurement frequency.

Capacitor C 1 should provide a short-circuit at the measurement frequency d) Measurement procedure

The a.c voltage generator is set to zero, and the d.c voltage generator is set to give the specified forward bias conditions The current I L1 is read from the d.c ammeter A

The a.c voltage generator is set to the specified r.m.s voltage V g and the new value I L2 is read from the ammeter

The detector power efficiency is calculated using the expression:

– measurement frequency (f) and r.m.s voltage (Vg);

– circuit parameters (RL and CL);

Noise V n, I n

To measure the noise current of a diode b) Circuit diagram (Figure 12)

Figure 12 – Circuit diagram for the measurement of noise current c) Circuit description and requirements

The diode may be biased in either direction to obtain noise values in either forward or reverse direction

The recommended values for the limits of the pass-band of the filter are: 900 Hz and

The noise current from the diode causes a voltage drop across the load resistor, which is amplified by a pass-band amplifier with specific bandwidth and gain The resulting noise voltage is measured using a square-law voltmeter The noise current within the pass-band can be expressed as \$v_R n^2 n^2 A\$.

A v = voltage amplification of the amplifier plus filter

The noise current may be brought back by calculation to 1 Hz of bandwidth e) Precautions

To ensure accurate measurements, the noise generated by the amplifier, load resistance, and d.c source must be minimal If significant noise is present, corrections should be made by measuring the noise with the diode substituted for a suitable resistor under specified conditions.

– forward current or reverse voltage

Working voltage V Z

To measure the working voltage corresponding to a specified working current b) Circuit diagram (Figure 13)

Figure 13 – Circuit diagram for the measurement of V Z c) Circuit description and requirements

The voltmeter V should have a high resistance compared with the resistance of the diode at the working voltage d) Measurement procedure

The output of the generator G is adjusted until the desired working current is displayed on the ammeter, after which the working voltage across the diode is measured using the voltmeter.

– mounting conditions including length of leads, if necessary.

Differential resistance in the working current range r z

To measure the differential resistance at a specified working current b) Circuit diagram (Figure 13) c) Circuit description and requirements

The working voltage V z is measured at two currents using the method described in 6.3.1

Switching between the two currents may be implemented using an additional pulse or alternating current source d) Measurement procedure

The current is set to a value 10 % above the specified working current and the voltage V 1 is read on the voltmeter

The current is then set to a value 10 % below the specified working current and the voltage V 2 is read on the voltmeter

The differential resistance is given by:

Since the voltage difference to be measured is small relative to the working voltage, an accurate method of measuring the voltage is required f) Specified conditions

Temperature coefficient of working voltage α vz

To measure the temperature coefficient of working voltage at a specified working current and over a specified ambient or case temperature range b) Circuit diagram (Figure 13) c) Circuit description and requirements

The working voltage V Z is measured at two specified temperatures T 1 and T 2 using the method described in 6.3.1 d) Measurement procedure

The temperature is set to the lower specified value (T 1 )

The current is set to the specified current (I Z ) and the voltage (V Z1 ) is measured

The temperature is set to the higher specified value (T 2 )

The current is set to the specified current (I Z ) and the voltage (V Z2 ) is measured

The temperature coefficient is calculated using the expression:

= − (Percent per degree Celsius) e) Precautions

Ensure that the current is the same for both measurements

As the voltage difference to be measured is small relative to the working voltage, an accurate method of measuring the voltage is required f) Specified conditions

Reverse current I R

The method for signal diodes in 6.2.1 applies.

Forward voltage V F

Junction capacitance C tot

Noise voltage V n

To measure the noise voltage of a reference diode under specified conditions b) Circuit diagram (Figure 14)

Figure 14 – Circuit diagram for the measurement of V n c) Circuit description and requirements

A selective amplifier having a stated bandwidth, a known amplification and a high-input impedance

V r.m.s voltmeter d) Precautions to be observed

If the inherent noise is not negligible, the measured value shall be corrected accordingly e) Measurement procedure

G is set to give the specified working current (I Z ) as measured on ammeter A

The noise voltage of the diode is assessed after amplification using a pass-band amplifier with a specific bandwidth and gain The output noise voltage is measured with a square-law voltmeter, and the noise voltage within the pass-band is calculated by dividing the meter reading by the amplifier gain under specified conditions.

– ambient or case temperature (T a or T c );

– working current and frequency of measurement (I Z , f);

Regulator current I S

To measure the regulator current of a current-regulator diode at a specified regulator voltage b) Circuit diagram (Figure 15)

Figure 15 – Circuit diagram for the measurement of I S c) Circuit description and requirements

D current-regulator diode being measured

The voltage generator is adjusted to obtain the specified value of regulator voltage V S across the current-regulator diode

The regulator current I S is read from the ammeter A e) Specified conditions

Temperature coefficient of regulator current α IS

To measure the temperature coefficient of regulator current of a current-regulator diode at a specified regulator voltage b) Circuit diagram

See Figure 15 c) Circuit description and requirements

The regulator current I s is measured at two specified temperatures T 1 and T 2 using the method described in 6.4.1)

The current measuring device A shall have a high accuracy, because the difference of the two currents to be measured occurs in the formula for the temperature coefficient

Therefore, the measuring device A shall be for example based on a bridge or compensation method or shall be a digital voltmeter of high precision

To ensure accurate measurements, it is essential to maintain a controlled ambient or case temperature Additionally, if the device experiences significant power dissipation, it is crucial to allow sufficient time for thermal equilibrium to be established prior to conducting current measurements.

For a specified regulator voltage V S as read from voltmeter V, the regulator current is measured at two specified values of ambient or case temperatures T 1 and T 2

The temperature coefficient is calculated using the expression:

= − (Percent per degree Celsius) where:

I S1 is the current measured at the lower temperature T 1

I S2 is the current measured at the higher temperature T 2 e) Specified conditions

– ambient or case temperatures (T1 and T2) (Ta, Tc)

Regulator current variation ∆ I S

To measure the regulator current variation of a current-regulator diode over a specified regulator voltage range b) Circuit diagram

The regulator current I S is measured at two specified voltages V S1 and V S2 d) Measurement procedure

The variable voltage generator is adjusted to the lower specified value V S1 ; the regulator current I S1 is read from the ammeter A

The variable voltage generator is adjusted to the higher specified value V S2 ;the regulator current I S2 is read from the ammeter A

The regulator current variation is then calculated using the expression:

Limiting voltage V L

To measure the limiting voltage of a current-regulator diode at a specified current b) Circuit diagram

The limiting voltage V L is measured at the specified limiting current I L d) Measurement procedure

The variable voltage generator is adjusted to obtain the specified value of current I L through the current-regulator diode and the voltage is measured on voltmeter V s e) Specified conditions

Small-signal regulator conductance g s

To measure the small-signal regulator conductance of a current-regulator diode under specified regulator voltage b) Circuit diagram (Figure 16)

Figure 16 – Circuit diagram for the measurement of g s (two-voltmeter method) c) Circuit description and requirements

R 1 The value of this resistor shall be sufficiently low with respect to 1/g s ; in practice, a value of 10 Ω to 100 Ω will be used, depending on the voltmeter sensitivity

R 2 The value of this resistor shall be sufficiently high with respect to the generator resistance

L The inductance is optional; its use facilitates the adjustment of the specified operating point

C 1 , C 2 These capacitances shall represent an effective short-circuit at the measurement frequency

P The push-button switch shall only be used for measuring V S

V a The voltmeter shall have sufficient sensitivity; for the measurement of low inductances, it shall preferably be a selective instrument d) Measurement procedure

The variable voltage generator G is adjusted to obtain the specified continuous voltage V S across the current-regulator diode

When switch S is in position 1, the voltmeter Va measures the value V1, which is calculated as V1 = Id R1 In position 2, the voltmeter measures V2, given by the equation V2 = Vs + Id R1, where Vs represents the a.c voltage drop across the current-regulator diode.

The small-signal conductance g s is then calculated using the following expression:

6.4.5.2 Two-terminal bridge method a) Purpose

To measure the small-signal regulator conductance of a current-regulator diode under specified regulator voltage b) Circuit diagram (Figure 17)

Figure 17 – Circuit diagram for the measurement of g s (two-terminal bridge method) c) Circuit description and requirements

Bridge bridge with a low d.c resistance between its input terminals and able to carry the required current without affecting the accuracy of the measurement

C capacitor providing an effective short-circuit at the frequency of measurement

The bridge is first balanced with the current-regulator diode removed

To measure the device, it is inserted into the measurement socket, and the specified regulator voltage is applied to balance the bridge The value of \$g_s\$ is then read from the bridge under these specified conditions.

Knee conductance g k

The same measuring method as in 6.4.5 above for small-signal conductance can be used, with the regulator voltage set to the specified value of V K

Clause 7 of IEC 60747-1:2006 and its subclauses apply.

Acceptance-defining characteristics

Acceptance-defining characteristics, their criteria and measurement conditions are listed in

The characteristics should be assessed in the order presented in the table, as alterations in these characteristics due to certain failure mechanisms may be completely or partially obscured by the effects of other measurement conditions.

Table 3 – Acceptance-defining characteristics for acceptance after endurance tests

Device sub-categories Acceptance defining characteristics Acceptance criteria Measurement conditions

I R ≤USL Highest V R specified for I R (Note 4)

∆< 2 % of IVD (Note 3) I Z specified for nominal V Z r z ≤USL

V nz ≤USL See the relevant specification

Current-regulator diodes V L ≤USL Highest I L specified for V L

NOTE 1 USL = upper specification limit

IVD = initial value of individual device

NOTE 2 For devices which are specified with a tolerance less than or equal to 1 %

NOTE 3 For devices which are specified with a tolerance greater than 1 %

NOTE 4 Where the V R specified for I R measurements is in the breakdown region, a lower value of V R may be used.

Electrical endurance tests

S ine w av e 50 H z or 6 0 H z P eak v al ue = V R m ax.

R L = lo ad res is tor Hi gh - tem per at ur e re ve rs e bi as

V R = V R m ax H igh es t ope rat ing tem per at ur e at w hi ch V R appl ies at T a m ax o r T c m ax as s pec ifi ed − +

R S = c ur rent lim itin g res is tor V ol tage -r ef er enc e di od es an d vol ta ge -r eg ul at or di od es

O pe rat in g lif e I z m ax as gi ve n in th e rel ev ant s pec ifi cat ion D ep en ds on I z (S ee 7 2 4 of IEC 6 07 47 -1 a ) − +

R S = c ur rent lim itin g res is tor Z Z S 0,2 R I V ≥

Device sub-categories include tests, operating conditions, and test circuits Current, voltage, and temperature are critical parameters, with current-regulator diodes influencing operating life versus maximum specifications as outlined in the relevant standards For detailed information, refer to section 7.2.4 of IEC 60747-1a.

R S = c ur rent lim itin g res is tor a S ee IEC 6 07 47 -1: 20 06 and its A m endm ent 1: 2010 _

3 Termes, définitions et symboles graphiques 40

3.1 Diodes de signal et de commutation 40

3.2 Diodes de tension de référence et diodes régulatrices de tension 41

4.3 Diodes de tension de référence et diodes régulatrices de tension 44

5 Valeurs limites et caractéristiques essentielles 45

5.3 Diodes de référence de tension et diodes régulatrices de tension 48

6.2.4 Temps de recouvrement direct tfr et tension crête de recouvrement directe VFRM 53 6.2.5 Temps de recouvrement inverse (trr) et charge de recouvrement (Qr)

54 6.2.6 Rendement de détection en tension ηv 55

6.2.7 Rendement de détection en puissance ηp 56

6.3 Diodes de référence de tension et diodes régulatrices de tension 58

6.3.2 Résistance différentielle dans la gamme des courants de fonctionnement rz 596.3.3 Coefficient de température de la tension de fonctionnement αvz 60

6.4.2 Coefficient de température du courant de régulation αIS 62

6.4.3 Variation du courant de régulation ∆IS 63

6.4.5 Conductance de régulation en petits signaux gs 64

Figure 1 – Symbole graphique pour les diodes régulatrices de courant 42

Figure 2 – Caractéristique d'une diode régulatrice de courant avec indication des symboles 44

Figure 3 – Forme d'onde du courant de recouvrement inverse 46

Figure 4 – Formes d’ondes du courant et de la tension 47

Figure 5 – Schéma de circuit pour la mesure de IR 51

Figure 6 – Schéma de circuit pour la mesure de VF 52

Figure 7 – Schéma de circuit pour la mesure de Ctot 53

Figure 8 – Schéma de circuit pour la mesure de tfr et de VFRM 53

Figure 9 – Schéma de circuit pour la mesure de trr 54

Figure 10 – Schéma de circuit pour la mesure de ηv 56

Figure 11 – Schéma de circuit pour la mesure de ηp 57

Figure 12 – Schéma de circuit pour la mesure du courant de bruit 58

Figure 13 – Schéma de circuit pour la mesure de VZ 59

Figure 14 – Schéma de circuit pour la mesure de Vn 61

Figure 15 – Schéma de circuit pour la mesure de IS 62

Figure 16 – Schéma de circuit pour la mesure de gs (méthode des deux voltmètres) 64

Figure 17 – Schéma de circuit pour la mesure de gs (méthode du point dipôle) 65

Tableau 1 – Tensions de fonctionnement préférentielles pour diodes de référence –

Tableau 2 – Tensions de fonctionnement préférentielles pour diodes de référence –

Tableau 3 – Caractéristiques définissant la réception après les essais d'endurance 67

Tableau 4 – Circuits et conditions d'essai pour les essais d'endurance 68

Partie 3: Dispositifs discrets: Diodes de signal, diodes de commutation et diodes régulatrices

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La Norme internationale CEI 60747-3 a été établie par le sous-comité 47E: Dispositifs discrets à semiconducteurs, du comité d'études 47: Dispositifs à semiconducteurs de la CEI

Cette deuxième édition annule et remplace la première édition parue en 1985, l'Amendement 1:1991 et l'Amendement 2:1993 Cette édition constitue une révision technique

This edition features significant technical updates compared to the previous version: a) All articles have been revised to align with the latest IEC publication style and format, incorporating all content from the prior release b) Each article has been amended with appropriate additions and deletions.

La présente norme doit être lue conjointement à la CEI 60747-1:2006 et son Amendement 1

Le texte de la présente norme est issu des documents suivants:

Les rapports de vote indiqués dans le tableau ci-dessus donnent toute information sur le vote ayant abouti à l'approbation de cette norme

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Une liste de toutes les parties de la série CEI 60747, publiées sous le titre général Dispositifs à semiconducteurs, peut être consultée sur le site web de la CEI

Les futures normes de cette série porteront dorénavant le nouveau titre général cité ci-dessus

Le titre des normes existant déjà dans cette série sera mis à jour lors de la prochaine édition

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• remplacée par une édition révisée, ou

Partie 3: Dispositifs discrets: Diodes de signal, diodes de commutation et diodes régulatrices

La présente partie de la CEI 60747 donne les exigences pour les dispositifs suivants:

– diodes de signal (à l'exclusion des diodes conỗues pour fonctionner à des frộquences supérieures à plusieurs centaines de MHz);

– diodes de commutation (à l'exclusion des diodes de redressement à haute puissance);

– diodes de tension de référence;

The following documents are referenced normatively, either in whole or in part, within this document and are essential for its application For dated references, only the cited edition is applicable For undated references, the latest edition of the referenced document applies, including any amendments.

CEI 60050 (toutes les parties), Vocabulaire Électrotechnique International (disponible à l’adresse )

CEI 60747-1:2006, Dispositifs à semiconducteurs – Partie 1: Généralités

3 Termes, définitions et symboles graphiques

Pour les besoins du présent document, les termes et définitions donnés dans la

CEI 60050-521, la CEI 60050-702 et la CEI 60747-1, ainsi que les suivants, s'appliquent

3.1 Diodes de signal et de commutation

Direct recovery voltage (tension de recouvrement directe) refers to the direct voltage that occurs during the direct recovery time following an instantaneous switch from zero or reverse voltage to direct current.

The voltage detection efficiency, denoted as \$\eta_v\$, is the ratio of the direct current voltage across the load to the peak value of the input sinusoidal voltage under specified circuit conditions.

The power detection efficiency, denoted as \$\eta_p\$, is defined as the ratio of the change in continuous power dissipated in the load resistance, generated by the alternating signal, to the available power from the sinusoidal signal generator when the diode operates under specified conditions.

E PR énergie d'une impulsion de courte durée qui fait partie d'une série répétitive d'impulsions

C tot capacité mesurée entre les bornes de la diode dans des conditions de polarisation spécifiées

3.2 Diodes de tension de référence et diodes régulatrices de tension

3.2.1 diode de tension de référence diode régulatrice de tension ó les tensions minimum et maximum sont toutes deux spécifiées pour le même courant

3.2.2 sens de régulation sens du courant obtenu lorsque la région de semiconducteur de type N est à une tension positive par rapport à la région de type P

Note 1 à l'article: Il s'agit également du sens inverse pour les diodes régulatrices de tension

3.2.3 gamme de régulation gamme de courants dans le sens de régulation à l'intérieur de laquelle la tension est maintenue dans des limites spécifiées

I Z courant dans la gamme de régulation

V Z tension dans la gamme de régulation

3.2.6 résistance différentielle de régulation r z résistance différentielle à un courant de fonctionnement dans la gamme de régulation

The temperature coefficient of operating voltage, denoted as $ \alpha_{vz} $, is defined as the ratio of the change in operating voltage between two specified temperature values to the difference between those two temperatures.

Tiêu đề	Semiconductor Devices – Part 3: Discrete Devices: Signal, Switching and Regulator Diodes
Chuyên ngành	Electrical and Electronic Technologies
Thể loại	Standards Document
Năm xuất bản	2013
Thành phố	Geneva

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