palladium thiolate bonding of carbon nanotube thermal interfaces

Fisher School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 e-mail: tsfisher@purdue.edu Palladium Thiolate Bonding of Carbon Nano

Stephen L Hodson

School of Mechanical Engineering and

Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 e-mail: stephen.l.hodson@gmail.com

Thiruvelu Bhuvana

Birck Nanotechnology Center, West Lafayette, IN 47907;

Jawaharlal Nehru Centre for Advanced Scientific Research,

Bangalore, India e-mail: bhuv.02@gmail.com

Baratunde A Cola

George W Woodruff School of Mechanical Engineering, Georgia Institute of Technology,

Atlanta, GA 30332 e-mail: cola@gatech.edu

Xianfan Xu

School of Mechanical Engineering and

Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 e-mail: xxu@purdue.edu

G U Kulkarni

Jawaharlal Nehru Centre for Advanced Scientific Research,

Bangalore, India e-mail: kulkarni@jncasr.ac.in

Timothy S Fisher

School of Mechanical Engineering and

Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 e-mail: tsfisher@purdue.edu

Palladium Thiolate Bonding

of Carbon Nanotube Thermal Interfaces

Carbon nanotube (CNT) arrays can be effective thermal interface materials with high compliance and conductance over a wide temperature range Here, we study CNT inter-face structures in which free CNT ends are bonded using Pd hexadecanethiolate, Pd(SC16H35)2, to an opposing substrate (one-sided interface) or opposing CNT array (two-sided interface) to enhance contact conductance while maintaining a compliant joint The Pd weld is particularly attractive for its mechanical stability at high tempera-tures A transient photoacoustic (PA) method is used to measure the thermal resistance of the palladium-bonded CNT interfaces The interfaces were bonded at moderate pressures and then tested at 34 kPa using the PA technique At an interface temperature of approxi-mately 250C, one-sided and two-sided palladium-bonded interfaces achieved thermal resistances near 10 mm2K/W and 5 mm2K/W, respectively [DOI: 10.1115/1.4004094]

Introduction

As the size of electronic devices scales down and power

den-sities increase, the demand for innovative cooling solutions

becomes more imperative Thermal interface materials (TIMs)

such as thermal greases and gels with highly conductive particle

additives are commonly used in microprocessor cooling solutions

where operating temperatures are near 100C However, recent

reliability tests on polymeric TIMs using thermogravitic analysis

revealed a dramatic increase in thermal interface resistance as

operating temperatures and exposure times increased [1] Because

of their high thermal conductivity, mechanical compliance, and

stability over a wide temperature range, CNTs have been

exten-sively studied as conductive elements [2 11] Several recent

reports have shown that dense, vertically aligned CNT arrays are

viable alternatives to current state-of-the-art TIMs [3 11]

How-ever, when contact sizes between a nanotube and an opposing

sur-face become comparable to the mean free path of the dominant

energy carriers, nanoscale constriction resistance becomes

impor-tant For CNT TIMs similar to those in this study, the resistive component at the CNT “free-tip” and opposing metal substrate has been shown to cause the largest constriction of heat flow in comparison to the bulk CNT and growth substrate resistances [9] Reduction of this “free-tip” constrictive resistance using novel CNT TIM composite structures has been the subject of ongoing research

This study aims to utilize CNT TIMs enhanced with Pd nano-particles to achieve low thermal interface resistances suitable for electronics in a wide temperature range In particular, two possi-ble enhancements of Pd nanoparticle-coated CNTs on interface conductance are assessed The first enhancement is an increase in contact area between the CNT “free-tips” and an opposing metal substrate that is formed from the Pd weld This increase in contact area mitigates the phonon bottleneck at the CNT/metal substrate interface Second, we consider an increase in electron density of states DOS near the Fermi level at the CNT/metal substrate inter-face that is a result of charge transfer between CNTs and Pd nano-particles In particular, we discuss the possibility of using elec-trons as a secondary energy carrier at the interface One- and two-sided interfaces, comprised of CNT arrays grown on Si and Cu substrates, are bonded to opposing metal substrates using a new method that utilizes the behavior of Pd hexadecanethiolate upon

Contributed by the Electronic and Photonic Packaging Division of ASME for

publication in the J OURNAL OF E LECTRONIC P ACKAGING Manuscript received December

1, 2009; final manuscript received January 13, 2011; published online June 23, 2011.

Assoc Editor: Cemal Basaran.

thermolysis Using a transient PA technique, bulk and component

thermal interface resistances of the Pd-bonded CNT interfaces

were resolved

Recent thermal resistance values for CNT based TIMs have

been measured to be between 1 and 20 mm2 K/W [3 11] The

thermal resistance values include both bonded and nonbonded

interfaces, and measurements were obtained using different

characterization techniques (1D reference bar, thermoreflectance,

photoacoustic, and 3-omega) Weak bonding at heterogeneous

interfaces, differences in phonon dispersion and density of states,

and wave constriction effects are factors that could hinder further

reduction in thermal contact resistance The adverse phonon

con-striction can be moderated by increasing the interfacial contact

area In an effort to increase the interfacial contact area,

develop-ments in bonded and semibonded CNT TIMs have rendered

ther-mal interface resistances as low as 1.3 mm2K/W [7] and 2 mm2

K/W [10], respectively CNTs exhibit ballistic conduction of

elec-trons in the outermost tubes [12] and ohmic current–voltage

char-acteristics with certain metals [13–15] When this effect is

coupled with a strong metallic-like bond at the CNT/metal

sub-strate interface, phonon constriction could be circumvented by

using electrons as a secondary energy carrier A possible way to

achieve electron transmission is through a strong CNT/metal

sub-strate bond and sufficiently high electron DOS at the interface

Nanoparticle-Decorated CNTs Functionalizing CNTs with

metal nanoparticles (Pt, Au, Pd, Ag, and Au) have been an area of

growing interest for a diverse set of applications [16–19] For

example, a biosensor [19] involving Au/Pd nanocube-augmented

SWCNTs showed significant increases in glucose sensing

capabil-ities The increased performance was attributed to a highly

sensi-tive surface area, low resistance pathway at the

nanocube-SWCNT interface, and selective enzyme adhesion, activity, and

electron transfer at the enzyme, Au/Pd nanocube interfaces Metal

nanoparticles can adhere to CNTs through covalent or van der

Waals interactions, which can lead to charge transfer Voggu et al

[20] performed ab initio calculations on semiconducting

single-walled CNTs interacting with Au and Pt nanoparticles and found

a significant increase in the ratio of the metallic to semiconducting

tubes when metal nanoparticles are introduced Charge density

analysis showed a decrease in electron density in the valance band

of Au and an increase in the outer orbitals of C, indicating direct

charge transfer A recent study [16] also found significant changes

in the Raman G-band peak intensity for pristine and silver

nano-particle-decorated metallic SWCNTs, indicating that the

nanopar-ticles alter the electronic transitions of the tubes With its high

work function [21] and strong adhesion to CNTs, Pd has proven to

be a metal that electronically couples well to CNTs [13–15,21]

Additionally, it has been suggested that efficient carrier injection

from Pd monolayers to graphene can be accomplished because of

the band structure that results from the hybridization between the

d orbital of Pd and p-p orbital of graphene [22]

Pd Hexadecanethiolate Metal alkanethiolates can serve as

sources of metal clusters upon thermolysis and yield either metal

or metal sulfide nanoparticles [23] While metal alkanethiolates

are insoluble in most organic solvents, Pd alkanethiolates have

been reported to be soluble in these solvents and also exhibit

repeated self-assembly [24] The soluble nature of Pd

alkanethio-lates in such solvents makes them attractive for forming smooth,

thin films on substrates In this work, we used Pd

hexadecanethio-late (Fig.1) to coat the CNT sidewalls with Pd nanoparticles

In a previous investigation by Bhuvana and Kulkarni [25], Pd

hexadecanethiolate has been patterned using electron beam

lithog-raphy and subsequent formation of Pd nanoparticles on

thermoly-sis was demonstrated Energy-dispersive spectral (EDS) values

before and after thermolysis were 21:71:8 and 90:9.6:0.4 for

(Pd:C:S), respectively [25] Most notably, electrical

measure-ments yielded resistivity values of Pd nanoparticles that were sim-ilar to that of bulk Pd

Experimental Details

CNT Growth by Microwave-Plasma CVD In manner simi-lar to that described by Xu and Fisher [5], an electron beam evap-orative system was used to deposit a trilayer metal catalyst stack consisting of 30 nm Ti, 10 nm Al, and 3 nm Fe on polished intrin-sic Si substrates For a two-sided interface, the tri-layer catalyst was deposited on both a Si substrate and 25 lm thick Cu foil pur-chased from Alfa Aesar (PuratronicV R

, 99.999% metals basis) Ver-tically oriented CNT arrays of moderately high density were then synthesized in a SEKI AX5200S microwave plasma chemical vapor deposition (MPCVD) system described in detail in previous work [26] In summary, the growth chamber was evacuated to 1 Torr and purged with N2for 5 min The samples were heated in

N2(30 sccm) to a growth temperature of 900C The N2 valve was then closed and 50 sccm of H2was introduced to maintain a pressure of 10 Torr in the growth chamber After the chamber pressure stabilized, a 200 W plasma was ignited and 10 sccm of

CH4was introduced to commence 10 min of CNT synthesis The samples were imaged using a Hitachi field-emission scanning electron microscope (FESEM) Figure 2contains images of the vertically oriented CNT arrays synthesized on Si CNT arrays grown on Cu foil are similar The array densities were estimated

to be approximately 108–109 CNTs/mm2 This estimation was conducted by manually counting CNTs from five different array locations at a moderate magnification in the FESEM The average CNT diameter for each array was approximately 30 nm while the array heights were approximately, 15–25 lm

Preparation of Pd TIMs For preparation of Pd hexadecane-thiolate, an equimolar solution of Pd(OAc)2 (Sigma Aldrich) in toluene was added to hexadecanethiol and stirred vigorously Fol-lowing the reaction, the solution became viscous and the initial yellow color deepened to an orange-yellow color The hexadeca-nethiolate was washed with methanol and acetonitrile to remove excess thiol and finally dissolved in toluene to obtain a 200 mM solution Using a micropipette, approximately 16 lL of Pd hexa-decanethiolate was added to the CNT array The CNT array was then heated for 5 min at 130C to evaporate the toluene Finally, the components of the two TIM structures tested were formed by sandwiching the substrates under a pressure of 273 kPa and com-mencing thermolysis by baking at 250C for 2 h in air The Si/ CNT/Ag foil structure consisted of Si/CNT and Ag while the Si/ CNT/CNT/Cu structure comprised of Si/CNT and CNT/Cu Figure3contains an FESEM image of the CNT array after ther-molysis at 250C The Pd nanoparticles that decorate the CNT walls range from approximately 1 to 10 nm Similar to other stud-ies [16,27], we assume that Pd nanoparticles preferentially attach

to defect sites in the CNT sidewalls The control samples (no Pd

Fig 1 Pd(SC 16 H 35 ) 2 structure

hexadecanethiolate and only toluene) were prepared under the

same heating and loading conditions as above

Photoacoustic Thermal Measurements A transient

photoa-coustic (PA) technique that has been described in detail previously

[8,11] was used to characterize thermal interface resistances

Figure 4 contains cross-sectional sketches for each multilayer

sample type tested, and Fig.5shows the experimental setup For a

multilayer structure, the PA technique can resolve both bulk and

component resistances in which the bulk resistanceRbulkin Fig.4(a)

is defined as

Rbulk¼ RSiCNTþ RCNTþ RCNTAg (1)

whereRCNTis the resistance of the CNT array andRSi-CNTand

RCNT-Ag are the contact resistances at the Si-CNT and CNT-Ag interfaces, respectively [28] Briefly, in a given PA measurement, the sample surface is surrounded by a sealed acoustic cell that is pressurized with He gas at 34 kPa The sample is then heated over

a range of frequencies by a 350 mW, modulated laser source The thermal response of the multilayer sample induces a transient tem-perature field in the gas that is related to cell pressure A micro-phone housed in the chamber wall measures the phase shift of the temperature-induced pressure response in the acoustic chamber Using the acoustic signal in conjunction with the model developed

in Ref [8], which is based on a set of one-dimensional heat con-duction equations, thermal interface resistances are determined using a least-squares fitting method

Results and Discussion

The PA technique was used to resolve bulk thermal interface resistances of one- and two-sided TIMs with configurations of Si/ CNT/Ag and Si/CNT/CNT/Cu The latter samples had CNT

Fig 3 Post-thermolysis FESEM image of CNT array on Si

substrate

Fig 4 Cross-sections of various TIM structures tested (a) Si/ CNT/Ag and (b) Si/CNT/CNT/Cu.

Fig 5 Photoacoustic experimental setup

Fig 2 CNT arrays synthesized on Si substrate (a) FESEM

cross-section image illustrating array height and (b) FESEM

image illustrating CNT diameter.

arrays grown on both the Si and Cu substrates, and the resulting

interface formed a two-sided, VelcroTM-like structure (see Fig.4(b))

In addition, component resistances were resolved on a separate Si/

CNT/Ag sample to elucidate possible mechanisms for enhanced

performance We note that the sample used for measuring

compo-nent resistances was not identical to those used to measure overall

resistance Specifically, a lower Pd thiolate concentration and

bonding pressure were employed in order to intentionally yield a

sample with poor thermal resistance such that the effects of the Pd

bonding could be better distinguished

In order to ensure proper operation of the pressure-field

micro-phone used in the PA setup, the maximum temperature tested was

250C, and the chamber pressure was limited to 34 kPa Bulk

re-sistance measurements for the Si/CNT/Ag and Si/CNT/CNT/Cu

samples were taken in a temperature range of 27C to 250C while

the component resistance measurement on the second Si/CNT/Ag

sample was performed at 27C Figure6shows bulk thermal

re-sistance values as a function of temperature for the Si/CNT/Ag

and Si/CNT/CNT/Cu samples The resolved component

resistan-ces for the second Si/CNT/Ag are tabulated in Table1

Within the temperature range, the Si/CNT/Ag and Si/CNT/

CNT/Cu structures decorated with Pd nanoparticles significantly

outperform the structures without Pd nanoparticles where the

av-erage thermal resistance value for the Pd nanoparticle-enhanced

structures was 11 mm2K/W and 5 mm2K/W, respectively

Aver-aging thermal resistances across the temperature range yielded

reductions of thermal resistance across the interface of

approxi-mately 50% in both cases In addition, all structures exhibited only small variations in performance across the temperature range, indicating thermal stability and applicability to high-tem-perature devices Due to the fact that Pd contains toluene, the effect of toluene on the morphology of the CNT array and ulti-mately the thermal performance needs to be addressed Therefore,

an additional set of samples were fabricated in which only toluene was added to the array These samples were also subject to the same heating and loading conditions and subsequently tested by

PA The interface resistances tabulated in Table 2indicate that while toluene is expected to significantly alter the CNT array mor-phology, its effect on thermal transport is negligible compared to the welding process that occurs during thermolysis We note that the toluene treated sample tested at a comparable resistance to the Si/CNT/Ag sample but remained within the instrument error Sim-ilar to Ref [8], the error estimates in Fig.6and Tables1and2are based on the instrument error that dominates over uncertainties based on the confidence interval from the regression analysis

Thermal testing was proceeded by assessment of the Pd enhanced bond by FESEM Figures7and8contain images of the structures after the bond was broken and the substrates were sepa-rated For the Si/CNT/Ag structure, the Si and Ag foil substrates are depicted in Fig.7while the Si and Cu foil substrates of the Si/ CNT/CNT/Cu structure corresponds to Fig.8 Clumps of CNTs that either remain attached to their Si growth substrate or are bonded to the Ag foil are readily seen in Fig 7 Additionally, Fig 7(a) shows a mesoscopic chasm in the CNT array and at higher magnification, and Fig 7(b) reveals sites in which CNTs were once attached to the growth substrate Examination of Figs

7(c)and7(d)indicate the clumps of CNTs are also attached to the

Ag foil From a thermal perspective, these CNT clumps most likely serve as hubs for heat transport between the array and the

Ag foil We note that an additional quantitative assessment com-paring the bond strength at the growth and Ag foil substrates would complement these observations and plan to do so in future work In lieu of this assessment, we postulate that upon detach-ment, fracture of the bond occurs at the interfaces as well as within the CNT array Figure8shows similar features throughout the landscapes of both the Si and Cu foil substrates While not observable in the Si/CNT/Ag structure, the CNT arrays in Figs

8(a) and 8(c), in particular the latter, resemble a topographical landscape indicating that significant bonding occurred at or around the CNT/CNT interface and most likely depends on the extent that one array penetrates into the other

The results in Table1indicate that reductions in bulk thermal resistance between decorated and undecorated TIMs occurred at the Si–CNT and CNT–Ag interfaces, with the latter having the largest reduction These results are congruent with Ref [9] in which the dominant thermal resistance was at the CNT “free-tip” interface as opposed to the growth substrate interface where the

Fig 6 Bulk thermal interface resistance as a function of

tem-perature (a) Si/CNT/Ag w/ and w/o Pd nanoparticles and (b) Si/

CNT/CNT/Cu w/ and w/o Pd nanoparticles.

Table 2 Bulk thermal resistances for Si/CNT/Ag structures at

27  C with and without Pd nanoparticles and/or toluene

Table 1 Component thermal resistances for Si/CNT/Ag struc-ture at 27  C with and without Pd nanoparticles

Sample

R Si-CNT

(mm2K/W)

R CNT

(mm2K/W)

R CNT-Ag

(mm2K/W)

CNTs are well adhered This significant reduction at the CNT–Ag

interface can be attributed to two mechanisms, both comprising of

nano- and mesoscopically sized contact regions as seen in Figs.7

and8 First, upon thermolysis, a strong bond between at the CNT/

Ag was created such that greater contact area was achieved and

we attribute the majority of improvement to the reduced phonon

reflection at the CNT/Ag interface In a previous study [9], the

authors concluded that the increase in contact area reduced

pho-non reflection at the boundary consisting of nanosized contacts

and provided enhanced pathways for heat conduction Similarly,

we postulate that the primary effect of Pd nanoparticles is to

enlarge individual contact points both at the CNT/CNT and CNT/

substrate interfaces In a broader perspective relative to length

scales, the ballistic component of constriction resistance that

dom-inates its diffusive counterpart [28] would be more influential in

an unbonded structure that primarily consists of many nanosized

contact points as opposed to a Pd bonded structure in which the

aggregated effect of Pd nanoparticles gives rise to more

meso-scopically sized contact regions

Second, in previous work by Bhuvana and Kulkarni [25], thermal

treatment of Pd hexadecanethiolate at 230C in air produced

me-tallic Pd nanowires with a specific electrical resistivity near 0.300

lX m Similarly, thermal treatment of structures in this study

could have produced a metallic-like bond between CNT free ends

and Ag foil via Pd nanoparticles in which a higher electron DOS

near the Fermi level at the CNT/Ag interface was established We

also note that two types of contacts can exist at a CNT/metal

inter-face: side- and end-contacted Although the general orientation of the dense, CNT arrays in Fig.2(a)are vertical, we assume that the majority of the contacts have side-contacted geometries upon compression into an interface For nonbonded, side-contacted geometries, the contact quality depends on tunneling of electrons across an energy barrier created by van der Waals interaction at the metal/CNT interface [29] and since the physical separation between the metal and CNT is comparable to the carbon/metal bond length, tunneling depends on the chemical composition and configuration of electronic states at the surface [13] If we con-sider Ag making uniform contact to graphene and the transmission

of an electron across the CNT/Ag interface, then in-plane wave vector conservation is enforced and for good coupling, the metal Fermi wave vector (kf,Ag¼ 1.2 A˚1) should be comparable to that

of graphene (kf,graph.¼ 4p/3ao¼ 1.70 A˚1) [29,30] Under weak coupling assumption (i.e., van der Waals interaction), calculated transmission probabilities at a uniform metal/graphene contact have been shown to exhibit a monotonic increase with contact length depending on CNT chirality [30] Indeed, the transmission probabilities reported in Ref [30] are quite small and therefore serve as a lower limit because the calculations were based on cou-pling strengths O(103) eV Furthermore, if the coupling strength were increased via a metallic-like bond, then higher transmission probabilities could be achieved

For larger diameter tubes, such as the CNTs in the present work, wavevector conservation becomes increasingly important [30] However, such conservation principles can be relaxed when disorder (defects and impurities) are present [30] Plasma-enhanced chemical vapor deposition (PECVD) grown CNTs in previous work have exhibited relatively high defects at the side-walls due to plasma etching [26,31,32] Thus, the additional disor-der from sidewall defects caused by PECVD synthesis and Pd impurities at the CNT/Ag interface could relax wavevector con-servation constraints In this case, additional scattering from defects and Pd impurities could increase the transmission proba-bility across the CNT/Ag interface, mediated by the presence of the Pd nanoparticles However, for CNT/metal contacts as opposed to graphene/metal, it has been shown that coupling of electronic states between the CNT and metal will exist regardless

of scattering from defects and impurities [33] We expect similar effects to be operative for the two-sided TIM configuration (Fig

4(b)), with most of the improvement localized at the CNT/CNT interface

Conclusions

In this study, CNT TIMs enhanced with Pd nanoparticles were fabricated using a previously developed method for CNT synthe-sis and a new process for bonding interfaces using Pd hexadecane-thiolate A transient photoacoustic technique was used to resolve bulk and component thermal interface resistances All structures enhanced with Pd nanoparticles exhibited markedly improved thermal performance and thermal interface resistances that are comparable to previously reported values in the literature and that outperform most state-of-the-art TIMs used in industry We attrib-ute the majority of improved performance to the strong Pd weld that reduced phonon reflection at the interface by increasing the contact area between the CNT “free-tips” and an opposing metal substrate In addition, we considered utilizing electrons as a sec-ondary energy carrier at the interface because of an increase in electron density of states at the CNT/Ag interface and offered dis-cussion on the dependence that electron transmission has on wave vector conservation and disorder With thermal stability across a wide temperature range, these structures are suitable for a variety

of applications, particularly high-temperature electronics Further investigation of energy and charge transport mechanisms at inter-faces and Raman characterization of the CNT TIMs will elucidate the results of this study Lastly, additional optimization related to coating and thermolysis of the Pd hexadecanethiolate solution on the CNT arrays could further reduce thermal interface resistance

Fig 7 SEM images of Si/CNT/Ag foil structure after

detach-ment (a) and (b) correspond to the Si substrate while (c) and

(d) correspond to the Ag foil.

Fig 8 SEM images of Si/CNT/CNT/Cu structure after

detach-ment (a) and (b) correspond to the Si substrate while (c)

corre-sponds to the Cu foil.

T Bhuvana and G U Kulkarni gratefully acknowledge the

sup-port from the Department of Science and Technology,

Govern-ment of India S Hodson and T.S Fisher gratefully acknowledge

partial support of this work from Raytheon as part of the DARPA

Nano Thermal Interfaces Program

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