https //iaeme com/Home/journal/IJIERD 16 editor@iaeme com International Journal of Industrial Engineering Research and Development (IJIERD) Volume 13, Issue 1, January December 2022, pp 16 19 Article[.]
Trang 1International Journal of Industrial Engineering Research and Development (IJIERD)
Volume 13, Issue 1, January-December 2022, pp 16-19 Article ID: IJIERD_13_01_003
Available online at https://iaeme.com/Home/issue/IJIERD?Volume=13&Issue=1
ISSN Print: 0976–6979 and ISSN Online: 0976–6987
DOI: https://doi.org/10.34218/IJIERD.13.1.2022.003
© IAEME Publication
THE STUDY OF ORGANIC LIGHT EMITTING DIODE FOR VEHICLE WITH GLASS FRIT
WITH HERMETIC SEAL
Minh-Tran Anh 1
1Dong Nai Technology University, Dong Nai, Vietnam
ABSTRACT
The study of organic light emitting diode for vehicle with glass frit with hermetic
seal with 931 days of lifetime OLED encapsulation The experimental result shown that
as the TPBi thickness is 20 nm, the OLED module is obtained a maximum luminance of
21100 cd/m 2 , EQE of 6.8%, CE of 20.1 cd/A and PE of 15.1 lm/W, respectively The shear strain and leakage testing is 12.995kg and 4.2×10 -8 atm*cc/s
Key words: organic light-emitting device (OLED), laser encapsulation, glass frit
Cite this Article: Minh-Tran Anh, The Study of Organic Light Emitting Diode for
Vehicle with Glass Frit with Hermetic Seal, International Journal of Industrial
Engineering Research and Development, 13(1), 2022, pp 16-19
https://iaeme.com/Home/issue/IJIERD?Volume=13&Issue=1
1 INTRODUCTION
Organic Light-Emitting Diodes (OLEDs) have attracted much attention to their potential value about a lot of lighting and display in the future.[1] In the last years, the improvement of the encapsulation technique, electrode materials and substrate processing will overcome the issue
of OLED degradation.[2] However, the organic materials are usually very susceptible to vapor, moisture and oxygen So the hermetic encapsulation is a necessary to important solution [3] A low diffusion vapor moisture and low absorption moisture properties of the made module is an ideal choice to avoid the damage to the OLED chip [4]
The laser processing technology in encapsulation is used to its coherence, non-contact process and complex shapes process [5] It is not only available of the OLED chip for temperature-sensitive materials, but also resist to the vapor, moisture and oxygen The usage of glass frit is advantage of a lower joint temperature, low strain and higher surface smooth [6]
2 EXPERIMENTAL AND DEVICES
The device is a 0.09 cm2 active area based on un-doped OLED with a three-layer structure The cathode pad is deposited by lithium fluoride (LiF) 1nm /aluminum (Al) 150 nm Electron Transport Layer, ETL is deposited by 2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) Alq3 acted as emission layer, EML Hole Transport Layer, HTL is
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deposited by N,N'-di[(1-naphthyl)-N,N'-diphenyl]-(1,1'-biphenyl)-4,4'-diamine (NPB) The device’s cross section is shown in Fig 1 All organic layers are deposited under high vacuum
of 1.2 ×10-6Torr and then the device is directly to an automated laser processing system for encapsulation
Figure 1 The green OLED device is in (a) Cross section (b) Schematic diagram
Glass frit of the encapsulated OLED sample is achieved under the laser power of 2.595W and the scanning speed of 0.1 mm/s with a localized heating way To spray 10 l/min of nitrogen
to prevent water vapor and oxygen into the glass cap while the package process is making
3 RESULTS AND DISCUSSIONS
3.1 The Measurement of OLED
Fig 4(a)(b)(c) is shown by (a) the current density-voltage and luminance-voltage (J-V & L-V)
characteristics, (b) external quantum efficiency (EQE) and power efficiencies (PE) including
electroluminescence (EL) spectra of the device, (c) the test of shear strength with UV glue and glass frit When the thickness of TPBi layer is changed to 10 nm /20 nm /30 nm /40 nm, a
maximum luminance after package process is obtained 13710cd/m2 at 8V (1111 mA/cm2), 21100cd/m2 at 10V (2160 mA/cm2), 19204cd/m2 at 12V (1060 mA/cm2), 20813cd/m2 at 14V (1094 mA/cm2), respectively The luminance loss with to without package only has 0.9 %/ 0.1
%/ 0.5 %/ 0.6 % The maximum EQE is 5.7 % /6.8 % /7.7 % /8.0 % The maximum current
efficiency is 19.2 cd/A /20.1 cd/A /19.3 cd/A /23.8 cd/A The maximum power efficiency is 12.3 lm/W /14.6 lm/W /15.9 lm/W /15.5 lm/W When the luminance is set at 1000 cd/m2, the operating voltage is 3.7 V /3.8 V /5V /6V The test of the shear strength is 2.338kgf with UV glue and 12.995kgf with glass frit as shown in Fig 2(c) The shear strength of glass frit with encapsulation is the best choice
Trang 3Minh-Tran Anh
Figure 2 The OLED is measured (a) Current density–voltage and luminance–voltage (J– V & L-V)
characteristics, (b) external quantum efficiency (EQE) and power efficiencies (PE) as a function of
brightness The inset shows electroluminescence (EL) spectrum of device, (c) the test of shear strength
with UV glue and glass frit
3.2 Stretched Exponential decay (SED) model for an OLED Lifetime
Stretched exponential decay (SED) of an OLED is expressed as equation (1)
Where L, L0, t, τ, and β are the OLED luminance, initial OLED luminance, current time, decay the time period, and a stretched exponent, respectively.[7,8] Finally, the lifetime of the OLED is arrived to 931 days as is shown in Fig 3
Figure 3 The test of an OLED is burned in
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4 CONCLUSIONS
This experiment utilizes the favorable laser characteristics and reduces the effect of temperature influence the organic materials at the encapsulation In the encapsulation process, we use the minimum laser power of 2.595W and scan speed of 0.1 mm/s to cure the glass frit achieve the OLED encapsulation 931 days of luminous highly lifetime OLED encapsulation incorporating
a NPB/ TPBi and Alq3 as hole / electron and light emitting layers
The OLED device is change the electron transport layer (TPBi) thickness to 10/20/30/40
nm As the TPBi thickness is 20 nm at the electron transport layer, the OLED device is obtained
a maximum luminance of 21100 cd/m2, external quantum (EQE) of 6.8%, current efficiencies (CE) of 20.1 cd/A, and power efficiencies (PE) of 15.1 lm/W, respectively The OLED device achieves a low driving voltage of 4V at 1000 cd/m2 The shear strength and leakage testing is 12.995kg and 4.2×10-8 atm*cc/s
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