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The W18O49nanowires of high surface areas exhibit a concentration-dependent response when exposed to ammonia.. The response of W18O49nanowires to ammonia transited from n-type to p-type

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Sensors and Actuators B 137 (2009) 27–31

Contents lists available atScienceDirect Sensors and Actuators B: Chemical

j o u r n a l h o m e p a g e :w w w e l s e v i e r c o m / l o c a t e / s n b

Y.M Zhao, Y.Q Zhu∗

Nanotubes Laboratory, Division of Materials, Mechanics and Structures, Faculty of Engineering, The University of Nottingham, University Park,

Nottingham NG7 2RD, UK

a r t i c l e i n f o

Article history:

Received 10 July 2008

Received in revised form

22 December 2008

Accepted 3 January 2009

Available online 19 January 2009

Keywords:

Gas sensor

Tungsten oxide nanowire

Ammonia

a b s t r a c t

This paper describes the room temperature ammonia sensing properties of ultra-thin W18O49nanowire (diameter less than 5 nm) bundles prepared by a solvothermal technique The W18O49nanowires of high surface areas exhibit a concentration-dependent response when exposed to ammonia An abnormal behavior of resistance increases first and followed by a decrease was observed when ammonia concentra-tion is above 1 ppm The response of W18O49nanowires to ammonia transited from n-type to p-type when the concentration decreased to sub-ppm level The W18O49nanowires are highly sensitive to sub-ppm and ppb level ammonia at room temperature, which is attributed to the small diameters, high surface areas and non-stoichiometric crystal structure

© 2009 Elsevier B.V All rights reserved

1 Introduction

Metal semiconductor oxides, such as SnO2, TiO2 and WO3,

etc., have been widely explored for application in detecting toxic

gases[1–4] The principle for the applications of these materials

in gas sensing is based on the fact that the electrical resistance

of the materials will be changed when they are exposed to the

gases Typically, semiconducting oxide type gas sensors are

clas-sified to p-type (resistance increases, e.g CuO and Cr2O3) and

n-type (resistance decreases, e.g SnO2 and ZnO) when exposed

to reducing gas (e.g NH3and CO)[4,5] Reducing the crystal size

and increasing the specific surface area of the sensing

materi-als are an effective way to enhance the sensing signmateri-als, since

the reduction/oxidation reactions are mainly affected by the

sur-faces of the oxide [6–9] Gas sensors based on single nanotube

or nanowire have been reported to exhibit high sensitivity, fast

response time, and operable ability at room temperature that are

unattainable for conventional materials[10–13] At present,

inves-tigations on single nanowire sensor are rather rare because of

the challenge in manipulation, fabrication, reproducibility and low

mechanical stability of a single nanowire Most of the studies are

based on films sensors comprising of nanowires Room

temper-ature detections of low concentration level (sub-ppm) ammonia

are of great importance in clinical diagnosis and food safety We

here report the ammonia detection properties of ultra-thin

tung-sten oxide nanowires with a diameter less than 5 nm at room

temperature

∗ Corresponding author.

E-mail address:yanqiu.zhu@nottingham.ac.uk (Y.Q Zhu).

2 Experimental

Tungsten oxide nanowires were prepared by a solvothermal technique 100 mg of WCl6(Sigma–Aldrich, 99.99%) was slowly dis-solved in 50 ml cyclohexanol to obtain a uniform solution The solution was transferred to a 125 ml Teflon-lined stainless steel pressure vessel for heating at 200◦C for 5 h After reaction, a blue precipitate was centrifuged and washed with deionized water and acetone for several times The resulting powder was pure tung-sten oxide nanowires (WONWs), which was subject to structural and morphological characterization by using scanning electron microscopy, transmission electron microscopy and powder X-rays diffraction utilizing a Cu K␣ radiation source having a wavelength

of 0.154 nm

An image of the sample assembly for the gas sensing mea-surement is shown in Fig 1 In order to assembly the tungsten oxide nanowires gas sensors, two gold electrodes with a gap of about 80␮m were first fabricated by cold sputtering of a thin layer of gold onto a masked quartz plate Then, a layer of tungsten oxide nanowire film was casted onto the substrate spinning across the two gold electrodes using a casting suspension of WONWs in ethanol The sensor sample was heated at 200◦C for 2 h to evap-orate the organic species and to improve the contact between the nanowires and the gold electrodes After the heat treatment, two conducting wires were attached to the two gold electrodes by sil-ver paste or by conductive tape The electrical resistance of the nanowire samples bridging the gap between the two gold elec-trodes at room temperature will be measured as a response to the gas The sensor sample was placed in a quartz test chamber (about

50 ml) A continuous flow of mixed example gas passes through the test chamber Gases were applied through two separate lines 0925-4005/$ – see front matter © 2009 Elsevier B.V All rights reserved.

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Fig 1 The sample assembly (the two gold electrodes with a gap of about 80␮m

deposited on glass by cold sputtering, top; with W 18 O 49 nanowires deposition

bridg-ing the gold gap, and silver paste electrode connections, bottom).

The first one passes dry air (compressed air, zero grade, BOC gases)

which is used to dilute the target toxic gas The other one

car-ried calibration gas of known concentration (Ammonia, 1000 ppm

balanced with air or 5 ppm balanced with nitrogen, BOC gases)

The desired gas concentration was obtained by varying the flow

rates of the target gases while the flow rate of dry compressed was

fixed The large flow rate dry compressed air, air usually at least ten

times faster than that of the target gas, was introduced into the

test chamber continuously throughout the whole measurement

The electrical current of the sensor sample was monitored when

a fixed potential was applied between the two gold electrodes by a

computer controlled CHI 650 potentiostat

3 Results and discussion

The SEM images of the WONWs are shown inFig 2a, exhibiting

the highly pure and uniform nanowires with a high aspect ratio

Fur-ther characterization by TEM (Fig 2b) reveals that the nanowires

shown in the SEM image (Fig 2a) are actually WONW bundles

consisting of ultra-thin nanowires with diameters of 2–5 nm, with

orientation parallel to each other The electron diffraction (ED)

pat-tern collected from an isolated bundle displays elongated spots in

a direction vertical to the nanowire growth direction attributed

to the alignment of the ultra-thin nanowires comprising the

bun-dle, as shown in the inset ofFig 1b The ED pattern suggests that

the nanowires grow along [0 1 0].Fig 3shows the XRD profile of

the WONWs, and all of the peaks can be indexed to the

mon-oclinic W18O49 (JCPDF No.71-2450) The specific surface area of

the WONW samples based on Brunauer–Emmett–Teller (BET)

gas-sorption measurements have been calculated to be 151 m2/g, which

is higher than that of the mesoporous WO3thin films (143 m2/g)

[14], about one hundred times of the best for commercial WO3

particles (1.7 m2/g)[15], and five times of the reported value for

nano-sized monoclinic WO3powders (less than 25 m2/g)[15]

Pho-toluminescence characterization of the tungsten oxide nanowires

by the solvothermal treatment of tungsten chloride in

cyclohex-anol, as we published previously[16], showed a ultraviolet (UV)

Fig 2 (a) SEM and (b) TEM images of the WONWs synthesized by solvothermal

process; the inset is the ED pattern.

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Y.M Zhao, Y.Q Zhu / Sensors and Actuators B 137 (2009) 27–31 29

Fig 4 Electrical response of the WONWs film to 200 ppm NH3

emission peak at 369 nm (3.36 eV) assigned to band–band

transi-tion and a strong blue emission peak at 423 nm (2.94 eV) attributed

to large amounts of oxygen vacancies that are often implicit in the

preparation of oxide semiconductors

The room temperature electrical response of the nanowire

sen-sor to a pulse of 200 ppm (balance air) NH3is shown inFig 4 The

current drops sharply when NH3was introduced into the

cham-ber, and it is then increased slowly to reach a stable state When the

NH3flow was cut off, the electrical current recovered and increased

quickly Heat treatment at elevate temperatures usually is used to

stabilize the current However, heat treatment at 400◦C and above

will significantly change the morphology and reduce the surface

areas of the ultra-thin WONWs, as we have reported elsewhere[17]

Therefore, in this work the sensor sample was annealed at 200◦C

for 2 h The baseline drift of the currents occurred during the

mea-surement due to the low annealing temperature and low operation

temperature[15,18,19] It is well-known that for a typical n-type

metal oxide semiconducting material, the electrical resistance

normally decreases when exposed to a reducing gas, such as

ammo-nia[5] However, the electrical response of the present WONW

sensor exhibits something unusual, as shown inFig 4, and a

resis-tance increase was observed Non-stoichiometric tungsten oxide

nanowires has been reported to experience a conductivity-type

change from p-type at room temperature to n-type at temperature

above 150◦C when exposed to 100 ppm ammonia[6] Abnormal

behavior of an abrupt decrease followed by a slow increase of the

electrical resistance of a nanocrystalline WO3sensor has also been

recorded[20]

Fig 5shows the electrical response of the WONWs to 45 and

400 ppm NH3 When exposed to 45 ppm NH3, a similar behavior

of sharp decrease and then slow increase in the electrical current

was observed; when a pulse of 400 ppm NH3was introduced, the

current decreased sharply again and followed by a fast increase

The stabilized current is higher than that in the synthetic dry air

The dynamic electrical response of the WONWs sensor to different

concentrations of NH3ranging from 0.1 ppm to 10 ppm was shown

inFig 6 In the range of 0.1–1 ppm NH3, the sensor exhibits a good

p-type response (the current decreases fast and then maintains at

a stable value) and the signal intensity increases with increasing

gas concentration, as shown in Fig 6 Above 5 ppm, the

abnor-mal behavior again appears (the current decreases suddenly and

then followed by an increase) The responses of the WONWs to

ammonia are dependent on the concentration of the ammonia and

experience a conductivity-type change with the increasing of the

ammonia concentration The electrical resistance changes of the

Fig 5 Electrical response of the WONWs to 45 ppm and 400 ppm NH3

W18O49nanowires when exposed to ammonia at room tempera-ture is believed to be caused by the variation of the surface acceptor states density related to the chemisorbed oxygen The surfaces of the ultra-thin diameter (less than 5 nm) of the W18O49nanowires are more active than the conventional bulk fully oxidized tung-sten oxide materials The large amounts of oxygen vacancies in the reduced tungsten oxide W18O49can serve as adsorption site The small diameter and large amounts of oxygen vacancies in the WONWs will facilitate the chemisorption of oxygen at a low temper-ature William has predicted that if the grain size of the materials is smaller than the depletion layer thickness (Debye-length), the grain could be considered as completely depleted so that the conductiv-ity would become surface-trap limited[5] Taking into account of the equilibrium between gaseous oxygen and surface oxygen ions, the Debye-length can be defined as

d =



2εε0KT

where ε is the material’s relative dielectric constant and ε0 is

dielectric constant of vacuum, K is the Boltzmann constant, T

is the absolute temperature, e is the electron charge, and N D is bulk donor density The conductivity of such materials can be expressed in terms of the surface acceptor states density formulated

Fig 6 Electrical response of WONWs to NH of different concentrations.

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Fig 7 Electrical responses of WONWs to (a) 100 ppb and (b) 10 ppb NH3 ; (c) and (d) after the subtraction of the baseline in (a) and (b).

as chemisorbed oxygen species:



e = eKIND

NA +pKIINA

KIND

(2)

where K I = n(1 − f A )/f A and K II = pn, where  e and p are electron

and hole mobility respectively, p and n are concentration of hole

and electron respectively, f Ais fraction of acceptors with trapped

electrons The interaction of the surface with the gas presented

in air will cause the surface acceptor state density change From

the above equation it can be seen that the conductivity is not

lin-early dependent on the surface acceptor state The conductivity will

decrease pass through a minimum and then increase again with

the increases of N A The minimum occurs when N Ais satisfying the

following condition:

NA= ND



eKI

pKII

(3)

If the bulk donor density N Dis too large or too small the

achiev-able surface state density N Acould not reach the minimum and the

material will exhibit a pure n-type or p-type response to the gas

pre-sented However, if the N D is in a proper range that N Acould reach

the minimum with variation of gas concentrations and a change

of the sign in conductivity variation will be observed The

abnor-mal behavior of the response of the WONWs to ammonia can be

explained if the diameter of the WONWs (less than 5 nm) is less

than the Debye-length at room temperature when the bulk donor

density of the WONWs is in a proper range By adopting the typical

values of√

ε = 2.29 and N = 4–6× 1015cm3for typically sputtered

tungsten oxide thin films[21,22], the Debye-length at room tem-perature is calculated to be about 45–50 nm We cannot use this value directly as the Debye-length for the WONWs since the donor density of the WONWs is affected by the oxygen vacancies in the nanowires However, for a reference, the ultra-small diameter of the WONWs and the conductive sign change observed in the experi-mental suggest that the diameter of the nanowires may be smaller than the Debye-length of the WONWs at room temperature Nevertheless, the electrical response of the WONWs inFig 6

is indicative that the WONWs sensor is particularly suitable for

NH3detection at sub-ppm level In fact, low concentration ammo-nia detection is actually desired for the development of highly sensitive sensor Electrical responses of the sensor to low concen-tration of NH3down to 10 ppb were studied.Fig 7a and b shows the electrical response to 100 ppb and 10 ppb NH3 Good signals were recorded at low concentration of 10 ppb NH3, even with the general baseline drift at room temperature.Fig 7c and d displays the electrical response of the WONW sensor to 100 ppb and 10 ppb

NH3, after the subtraction of the baseline. It is clear that stable and repeatable signals were obtained for both low concentrations

of 100 ppb and 10 ppb NH3.These results show that this type of WONWs sensor is indeed capable of NH3 detection at ppb level, which is still a big challenge for conventional sensing materials [23–25] A simple comparison with other forms of tungsten oxide

in NH3detection reveals the advantages of the present WONW sen-sors It has been reported that pure WO3do not respond to 100 ppm ammonia at room temperature[26] W18O49nanowires have been found to be responsive to 10 ppm ammonia at room temperature

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Y.M Zhao, Y.Q Zhu / Sensors and Actuators B 137 (2009) 27–31 31

[6] Fully oxidized WO3only have several active sites, however the

large amounts of oxygen vacancies in the reduced tungsten oxide

W18O49can serve as adsorption sites of gas molecular [27] The

current high specific surface areas of the oxide nanowires may be

due in part to a combination of the small diameters of individual

nanowires comprising the bundles and the unique packing

char-acteristic of the bundles themselves Barret–Joyner–Halenda (BJH)

analysis for the pore size distribution reveal an apex centred at

about 2.2 nm The pores are considered to arise from two possible

mechanisms: (1) direct formation within nanowires during the low

temperature solvothermal preparation technique and (2) indirect

formation via the inter-nanowire spaces within a bundle The high

sensitivity of the W18O49nanowires sensor should be attributed to

the small diameter (less than 5 nm), the high surface area and the

non-stoichiometric crystal structure

4 Conclusion

We have investigated the ammonia sensing properties of

W18O49 nanowires prepared by a low temperature

solvother-mal technique The electrical resistance of W18O49 nanowires is

increased when exposed to sub-ppm level ammonia, exhibiting

a p-type behavior The electrical resistance of W18O49nanowires

increases first and then decreases when exposed to ammonia with

a concentration more than 1 ppm The abnormal behavior of the

W18O49nanowires to ammonia is related with the ultra-thin

diam-eter (less than 5 nm) The high sensitivity of the W18O49nanowires

in the detection of sub-ppm to ppb level ammonia at room

tem-perature is attributed to the small diameter, high surface area and

non-stoichiometric crystal structure

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Biographies Y.M Zhao has just received her PhD title from The University of Nottingham, UK She

received her first degree and master degree in Materials Science and Engineering in University of Science and Technology (Beijing, China) in 1999 and 2002, respectively Her research interests focus on the preparation, characterization and application of novel inorganic one-dimensional nanomaterials.

Yanqiu Zhu obtained his BSc and MSc degree at Harbin Institute of Technology

(Harbin, China) in 1989 and 1992, and his PhD degree from Tsinghua University (Beijing China) in 1996 His research covers carbon nanotubes and a variety of inorganic nanomaterials He is a Reader in Nanomaterials at the University of Not-tingham (UK) with a research interest focusing on the synthesis and application of nanomaterials.

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