Tgp chi khoa hgc TrUJfng Dgi hgc Quy Nhan Sd 4, Tgp VI nSm 2012 NGHIEN ctfu PIN MAT TR^I MANG M 6 N G BANG PHlTOfNG PHAP MO HiNH H 6 A VA M 6 P H 6 N G sd NGUvfeN DLfC HigU", VO THI THANH TUY^N'''''''', TRA[.]
Trang 1NGHIEN ctfu PIN MAT TR^I MANG M 6 N G BANG PHlTOfNG PHAP
MO HiNH H 6 A VA M 6 P H 6 N G s d
NGUvfeN DLfC HigU", VO THI THANH TUY^N'', TRAN THANH THAP
1 GI<3l T H l £ u CHUNG Trong nghien ctJu phdt trien pin mat tr5i mang mong, phtfdng phap thiJc nghiem
dtfdc su* diing rpng rai d^ nghien ctfu cdc tinh cha't vat I^ cOa vat lieu hien tai vk dong
thcJi khai thdc cdc vSt lieu m<5i Phtfdng phdp thtfc nghiem the hien nhieu utf did'm ndi trOi nhtfng n6 cung gdp phai kh6 khdn khi dieu chinh mpt thong so cong ngh6 ma khong anh htfdng nhieu den cdc thong so cong ngha khdc [1,2] Day la van de md m6
hinh h6a va m6 phong s6' (goi t^t la m6 hlnh s6) c6 kha nang ho trd manh me Vdi m6 hinh &6, cdc thong so rieng biet, nhtf dp rong vOng c^m, co the thay doi ma khong can
thiet tac dpng cdc thong so khdc D i l u ndy cho phep chung ta khao sat cac anh htfdng hen quan de'n m6t thong s6'md khdng dnh htfdng den cdc thong so khac Ngoai ra, mo hinh s6' cho ph6p khao sdt cdc thong s6' cong nghe thay ddi trong mot pham vi rpng, Idn hdn ra't nhieu kha ndng thtfc hien trong phong thi nghiem Mot thuan Idi khdc nffa cfia mo hinh so la kha ndng thie^t lap lai chinh xdc cdc thong tin nhan dtfdc ttf cdc ke't qua thtfc nghiem vd m6 phong dtfdc cac qua trinh xay ra trong thtfc nghiem Do do, mpt kS't qua m6 phong c6 nghi ngd thi de dang xem xet tac dpng cac tham s6'dau vdo
vd c6 the phat hien dtfdc cdc nguydn nhan mpt each de dang [3, 4, 5]
Ngoai nhffng ifu diem ndi trdi n6u tren, mo hinh so' cung co mpt so' nhtfdc diem Nhtfdc diem chinh Id khong co kha ndng xay diing mo hinh chinh xac cdc linh kien quang dien Do do, mpi kd't qua dat dtfdc phai dtfdc xem xet trong pham vi han che cua mo hinh do De dp dung cdc k^t qua mo phong cho cdc pin thtfc te thi can phai xdc dinh dtfdc m^i ttfdng quan giffa mo hinh ly thuyet va pin mat tr5i thtfc te [5, 6]
Trong bai bdo ndy, chiing toi thong bdo cdc ket qua nghien ctfu mo hinh hoa va
mo phong so pin mat trdi mang mong tren cd sd Idp hap thu CuInS, (gpi tat la pin mat trdi CIS) bang phan m e m SCAPS-ID
2 M O HINH S 6 PIN M A T TRCJl
Mo hinh so ciia pin mat trdi mang mong bao hdm cac bai toan so cua cdc phtfdng trinh thiet lap, chdng hinh thanh mSt m6 hinh todn cho boat dong linh kien va cdc mo hinh m6 ta cdc ddc tnffig vat lidu va cac qua tnnh boat dpng Iinh kien Trong phan mem SCAPS-ID, cdc phtfdng tnnh cd ban dtfdc giai la phtfdng tnnh Poisson vd cdc phtfdng trinh lidn tuc doi vdi didn tuT vd l6 trong va cdc qud trinh tai hdp - phdt sinh
Trang 2Cic phUtfng trinh cd bin
Cic van dl v5t ly linh ki$n biin d3n diTcJc Ihi hi§n trong h$ cic phiTdng trtnh
Poisson vi phUdng trinh li6n tuc di§n tOf -15 trong [1,3, 6):
E W ^ 1 = - ? [ M ^ ) - « ( X ) + A ' „ * W - W / W + P,(X)-«,(X)] (1)
^ = ? [ « W - G W ] + 9 | (2)
^'=?[;?W-G(x)]+9j (3)
Trong d6: i() 14 thfi' tinh di?n, E hSng s^ di^n m6i, n vi p U n5ng dO di$n td vi lo
trd'ng tir do, N^^ vi N^ I& nong dO cdc donor vi acceptor bj ion hda, a^(\) vi p^Cx) h
cdc bay dien tu' vi IS tr^ng, J^ vi J^ li mat do d6ng di^n tu' vi lo trong, R li toe do tii
hop, vi G li toe do phit sinh Trong nghien clJu niy, chi x6t bii toin mOt chilu trong
che do dirng, dodo:
^ ^ = 0 vi ^ - = 0 (4)
dt dl "
Cic dieu kien tai hop trong phiTOng trinh (2) vi (3) li phu thupc khong djyen
tinh vio cac nong da hat tai n vi p He phtfOng tiinh vi phan khdng tuyen tinh (1) - (3)
dildc giai bing cic phiiong phap so nhft phan mem mo phong SCAPS-ID ±eo phan
bd Fermi-Dirac Nghidm cua he bao gom ba tr^ng thii c6 th^ thay ddi i|>, F,_, vi E ,
nghiem niy du d^ suy ra tat ci cic die trUhg khic trong dieu kien trang thii dilfng
Phi^tfng trinh lien tiic
Trong tnlflng hdp tdng quit, sir chuyen rSi cQa cic h?t tai didn trong bin dinbi
chi phdi bdi hai qui trinh: qui trinh khu^ch tin dudi tic dung cia gradient ndng dd va
qui trinh kdo theo bdi gradient didn thd' trong dien trirflng Cic qua trinh nay diioc
bieu didn bdi cic phtfdng trinh hen tuc [1, 3, 6]:
J,=1\i.n^+qD, (5) J,=q\i,l^-qD^^ (6)
C* day: n„, p._,, D_, D^ va ^lln lUdt li dO Unh ddng cic hat tii, hkng sd khudch tin
cua cic hat tai vi tnrdng tinh dien Vdi svf xic dinh cia cic mile quasi-Fermi, E^ va
E^, va cic dien thd' quasi-Fermi, *,, = - (E„/q) va %=<B^lq), phtfdng trinh (5) vi (6)
CO thd vid't rut gpn:
/.=-9H„n-J^ (7)
Trang 3103
J, = '<IV;P
3 CAU TRUC PIN MAT T R 6 I MANG M 6 N G VA CAC T H 6 N G S6 CO BAN
DAU VAO M 6 P H 6 N G Trong nghidn cffu niy, chung toi khdo sit pin mat trfli CIS cSfu true ddo bao gdm cic Idp vat lidu sau: ldp ci>a sd n-ZnO:In, Idp ddm n-CdS vi Idp hd'p thu p-CuInS^ Cd'u tnic ciia pin dtfdc trinh biy nhtf trdn Hinh 1 Cic thong sd cd ban dau vao mo phong dtfdc trinh biy trong Bdng I
+
II 1^ ]i
Anh sang mat trai
Hinh 1 Cdu true pin mat trdi CIS Bdng 1 Cdc thdng sdcabdn ddu vdo eiia ede ldp ZnO.Tn, CdS vd CuInS^
Layer thickness (nm)
Band gap (eV)
Dielectric permittivity
Effective density of states in
conduction band (cm'^)
Effective density of states in
valence band (cm'')
Electron thermal velocity (cm/s)
Hole thermal velocity (cm/s)
Electron mobility (cmW.s)
Hole mobility (cmW.s)
Shallow donor density (cm')
n-ZnO:In
250 3,3
10 2,2.10"
1,8.10"
10' 10'
100
25
n-CdS
60 - 200 2,42
10 2,0.10"
1,8.10"
10' 10'
100
25 7.10"
p-CulnSj 800-3000 1,40-1,55
10 2,2.10" 1,8.10" 10' 10'
100
25
Trang 44 idT QuA M 6 PH6NG VA THAO LUAN
4.1 Anh hirdng cua chilu diy ldp d^m CdS
Chidu diy Idp ddm CdS dtf(?c khdo sit trong ph^m vi S^js = 60 - 200 nm, trong khi chieu diy cdc Idp CuInS,viZnO:Indtf(?cgiOcddjnh 5„s = 2,0nmvi 5|2£, = 250nm
Kd't qud md phdng cic thong sd quang didn ciia pin mit trdi dtf(?c th^ hi$n trong BingZ' Bang 2 Cdc thdng sd quang dlin cua pin m<ll trdi CIS md phdng bdng SCAPS-ID
khi cttiiu ddy ldp dim thay ddi
lyj Chi^u diy ldp Di$n dp hd Mit dd ddng ngin Hd sd Hidu su^t ddm (tun) mach (mV) mach (mA/cm') IJ'p ddy (%) (%) M-OI
M - 0 2
M-03
M-04
M-05
M-06
M-07
M-08
60
80
100
120
140
160
ISO
200
490
464
445
431
420
411
386
327
9,77 7,96 6,85 6,23 5,78 5,21 4,10 3,27
29,83 26,83 25,22 24,54 23,48 22,08 19,67 16,66
0,83 0,74 0,69 0,66 0,61 0,54 0,41 0,24 Hinh 2 bieu didn stf phu thu6c cdc thong so ddc tnftig ciia pin mdt trdi vdo chi^u ddy ldp d$m
^ m
^ B
u
g
1^'
^
k
\ ^
M
! 1
^
>-^
\
\|
(•)
ID eo ao 109 130 140 i«a I K 200 210
Chtfu d&y I6p d ^ (nm)
V
^ K
^ N J
(e)
^
!
i ,
1
f
• ^
K
\ h
\
H
f~
Chriu<ttyl«t]dfni(nm}
130 140 ISO 1 SO 200 220
*0 N N 100 13D 140 i n IM 300
Chlfiu djiy ldp O^m (nm) Chitu ddy Idp 0 ^ {nm}
Hinh 2 Su thay ddi (a) dien dp hd mgch (b) mat do ddng ngdn mgch, (c) h^ sdldp
Trang 5Dd d i n g thd'y rJng, c i c g i i tri V^^, J^^., FF v i r| deu gidm khi 8^^^ tdng tir 60 dd'n
200 nm Khi 5^.^^ tdng se l i m t i n g dp hS^p thu trong Idp CdS d i n dd'n l i m g i i m Itfong photon dd'n Idp hap thu va l i m giam cd V,^ va J^^ (Hlnh 2a,b) M i t khdc, stf gia tdng
"^"^ 8„s cOng lam t i n g didn trd ndi tid'p da pin m i t trdi [2,4] v i ddy cung l i nguydn
nhan l i m gidm hd sd la'p day v i hidu sua't chuyen ddi (hlnh 2c,d) Ttf hinh 2 cQng c6 the nhan tha'y, cdc thdng sd d i e trtfng ciia pin m i t trdi ffng vdi chieu d i y Idp ddm
^cds = ^ "™ i^^" '^^ g'4 tri Idn nha't Chieu day Idp dem trong dai 5^^^ = 80 - 140 nm
cho thd'y pin mdt trdi v i n thu dtfcjc cdc thdng s d quang didn d i e trtfng tdi tfu vl J v i T| chi giam ddng ke khi chidu d i y 5 „ s > 140 nm
Til kd't qua khdo sdt trdn, cho phdp chon chieu d i y CdS phil hdp u-ong pham vi 8j.^j = 6 0 - I 4 0 n m
4.2 A n h htfdng cua chidu day ldp hS'p thv CuInSj
Chieu d i y Idp hap thu dnh htfdng rat manh de'n c i c thong sd quang didn ciia pin mdt trdi, ddc biet l i c i c pin mdt trdi trdn cd sd hd vdt lieu Cu-chalcopyrite [5,6] Tidu chi chung nhd't tt-ong cdng nghd chd tao pin m i t trdi mang mong hidn nay l i sff dung chieu d i y Idp ha'p thu mong m i van dam bdo hieu sua't chuyen ddi quang didn cao Ly do chinh cho stf lifa chpn n i y l i vdt lieu sff dung it v i cho phep thdi gian lang dpng nhanh Dieu n i y ddn dd'n san phd'm pin mat trdi c6 gid thanh thd'p v i trpng Itfdng nhe hdn [5, 8]
D e x i c dinh thong sd chieu d i y tdi tfu Idp hafp thu vdi ca'u true nhtf the hien trong Ifinh 1, chung tdi khdo sdt chieu d i y Idp hd'p thu CuInS^ thay ddi trong gidi han
5^jg = 0,8 - 3,0llm, ttong khi chieu d i y ldp ZnO:In v i CdS dtfdc co dinh vdi cdc g i i tri
l l n Itfdt 8 , ^ = 250 nm vd S ^ j = 120 nm
Kd't qua md phdng cua c i c thdng so quang didn phu thudc 5^^^ dffdc trinh b i y trong Bang 3 va Hlnh 3 trinh bay dd thi quan he V^^., 1^, FF v i T] theo S(.,j
Bdng 3 Cdc thdng sd guang dien cua pin mat trdi CIS mo phdng bdng SCAPS-ID
khi chieu ddy ldp hdp thu thay ddi
„ l Chieu day ldp Didn i p hd Mdt dd dong ngdn He so Hieu suaft hap thu (|jm) mach (mV) mach (mA/cm') lap day (%) (%)
M-09
M-10
M-11
M - 1 2
M-I3
M-14
M-15
M-16
0,80
1,00
1,25
1,50
1,75
2,00
2,20
2,50
371
394
414
426
430
432
432
432
4,12 4,39 4,99 5,71 6,08 6,23 6,23 6,22
26,23 25,79 25,36 25,18 24,74 24,60 24,59 24,54
0,45 0,49 0,55 0,59 0,63 0,66 0,66 0,66
Trang 6Hlnh 3a,b bidu didn stf thay ddi ciia V ^ vi Jj, theo S^j C6 thd thay rSng, cd V^
vi Jj^ gidm ddng kd khi 8^^ < l,5nm Khi chidu diy ldp hSfp thu mdng vilng nghdo se
md rOng hdn vd phia tidp xffc mdt sau ndn lim ting si/ tii h<?p tai bd mit giffa phdn bidn ldp hd'p thu/tid'p xue mdt sau cOa pin mil (rfli ndn didn tff dd ding bi bit giff sau khi phit sinh [4, 5] Hdn nffa, dd truydn qua ling hdn vdi Idp hd'p thu mdng ndn tdn hao quang Idn hdn Do dd, chi mdt sd it didn tff phit sinh tham gia ddng gdp cho hieu
sua't chuyen ddi ndn S^ vi V^j^ hlnh thinh c6 gii tri thd'p Cdc If do ttdn din ddn Mdu
sua't chuydn ddi suy giim khi chidu ddy ldp hdfp thu cing mdng [5]
;
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:
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ChiSu d i y I6p hdp thu (^m) C h K u i t t y t 6 p M p t h v b > n i } 20 zs u
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Chl^u ddy ldp hdp thv (am) Chidu ddy I6p hdp th^ oun) zs M
Hinh 3 Su thay ddi (a) diin dp hd mgch,(b) mat do ddng ngdn mgch, (c) hi sdldp
ddy vi (d) hi$u sudt ehuyin ddi theo S
Trang 7107
Mat khic, khi 5^^^> 2,0nm, gii tri V ^ vi 3^ dat gii tri bao hda Trong ttKdng hdp niy he sd lafp diy vi hidu sua't cung gan nhff khdng ddi (FF ~ 24,6 %,r\~ 0,66 %)
(xem Hinh 3c,d) Hidu sua't chuyen ddi quang didnri ciia pin mdt ttdi c6 gii tri thap trong trffdng hdp 8^,5 < 1,5 |im nhtf the hidn trong Hlnh 3d
Nhtf vay, cdc thdng sd quang dien cua pin mdt trdi sd thay ddi khi chieu ddy cffa ldp hap thu thay ddi Vdi tidu chi Itfa chpn nhtf ttlnh biy d tren vi dam bio stf phff hdp giffa 4 thdng sd quang didn cOa pin mdt trdi, chidu diy Idp ha'p thu Iffa chpn phil hdp
nha't trong pham vi 5^^^ = 2,0 - 3,0 |tm
4.3 Khao sdt anh hirdng cua dd rdng viing cS'm quang ldp hd'p thu
Cic kd't qua nghidn cffu ttong [9, 10] cho thd'y, do rpng vilng ca'm quang Idp hd'p thu CuInSj phu thupc ding ke vao cic thdng sd cdng nghd nhtf nhiet dp ling dpng, ti
Id moi cic tidn chd't, didu kidn xff If nhidt vi qui trinh pha tap De dat dffpc hidu sua't
chuyen ddi quang dien cao ciia pin mdt ttdi, chiing ta cin khao sit dnh htfdng ddng thdi hai dai Iffdng sau [5, 6, II]:
1) Stf thay ddi dp rdng vffng ca'm ldp ha'p thu E
2) Dp lech vilng ddn AE^ tai ranh gidi chuyen tid'p CdS/CuInSj
Trong nghidn cvtu nay, chiing tdi khdo sdt E thay ddi trong khoang gii tri tff 1,40
ddn 1,55 eV Mpt sd thdng sd cd ban dau vio sff dung trong md phdng dffdc trinh biy trong Bang 1 Bang 4 vi Hlnh 4 trinh biy kdt qud md phdng cic thdng sd quang didn ciia pin mit ttdi ttong trffdng hdp niy
Bdng 4 Cdc ihdng so quang diin cua pin mat trdi CIS md phdng bdng SCAPS-ID
khi dd r0ng vung cdm quang ldp imp thu thay dot
j^-s Dp rpng viing Didn ip hd Mat dp dong ngin He sd Hieu suaft
"" ca'm quang (eV) mach (mV) mach (mA/cm') lap day (%) (%) M-18
M-19
M-20
M-21
M-22
M-23
M-24
M-25
1,40
1,42
1,44
1,46
1,48
1,50
1,52
1,55
394
407
420
430
434
434
434
433
7,73 7,18 6,71 6,32 6,14 6,03 5,75 5,66
21,78 22,97 23,83 24,55 24,80 24,90 24,89 24,74
0,643 0,645 0,650 0,653 0,654 0,655 0,650 0,634
Trang 8490-I
1
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3W
/
/
/
1
^
1 1 »
(•)
54 I B
D^ r^ng vilng cdm quang (oV)
t 24
30 1
/
/
(
40 1
/
42 1 44 1 40 1 4S 1 50 1 S3 1
(e)
H 1 9
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^ " N > - - 1
W
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1
VM 1 4 0 142 144 1 4 0 1 4 8 ISO 192 1.54 1 *
OO fOoO ''L"»B c*"" <M"fl ("V)
°*
4
s
\ (1
^
so rOng vCrng cSm quang (eV) 0$ r^ng vOng c&n quang (aV)
HinA 4 Su thay đi (a) diin dp hd mgch (b) mat dg đng ngdn mgch, (c) he sdldp
đy vd (d) hiiu sudt ehuyin đi theo Ê cua CuInS,
Theo thdng bio ttong [11], V ^ v i Ê cd mdi quan he nhff sau:
bién thi€n Trong dieu kien chieu sdng va nhiet d6 1dm viSc khSng doi, V^,
tuy^n tinh vdi Ệ Vi vay, khi Ê gia tdng cung 1dm gia tdng V^^,
Tren do thi Hinh 4a, cho thay V^ gia tdng tuyd'n linh khi Ê gia tdng ttf 1,40 den 1,46 eV Sau do V^^^ gia tdng khong đng k^ vd dat gid tri bao h6a tai gid tri N^^ - 430 mV
khi E Si,48 eV Ngúcfc lai, J^^, suy giam khi dp rpng vCing ed'm gia tdng (xem Hinh 4b) Nguyen nhdn hien lúdng ndy c6 the la do khi E c6 gid tri Idn cdc photon bi hap thu tai vung p ciia pin mdt tr6j se khong du ndng Itfdng de vifdt qua vClng cám cda ldp hd'p thu d^ tham gia qud tnnh phat sinh cap dien tu" - lo trS^ng Trong tnfdng hdp E = 1,5 eV thi chi cdc photon mang ndng Itfdng co gid tri hv> l,5eV se đng gop phdt sinh cdp di€n tiJ" -16 trong vd cdc photon cd gid tri hv < 1,5 eV se bi loai tri3f
Mpt nguyen nhan khdc c^n Irfu ;^ la khi E cd gia tri Idn se tdng ciTdng kha nang
tai hdp dien lit - lo trong tai viing p trong pin mdi trdị Do đ, cdc hat tai ttf do bi tdi
Trang 9sinh [2, 4 ] C i c nguydn nhan ttdn l i m cho i^ bi suy gidm khi E gia tang Co the thay,
hidu sudt chuyen ddi I c u n g gia tdng khi E^ gia t i n g nhtfng g i i m dan sau khi dat gii tri ctfc dai (Hinh 4d) Hidu sud't ctfc dai dat dtfdc Id 11= 0,655 % tai E = l,50eV, ddy la gia tri g a n vdi g i i tri dd rdng vilng cdm tdi tfu cua ddn tinh the khd'i CuInS, ( E ^ = l , 5 3 e V )
Kdt hdp 4 thdng so quang dien nhdn dtfdc tff ke't qua md phdng trdn Hinh 4 cho phep chpn dd rdng vffng ed'm quang phff hdp trpng pham vi E = 1,45 - 1,50 eV
5 KET LUAN
C i c thpng so cua pin m i l trdi m i n g mdng ZnO;In/CdS/CulnSj, bao' gdm chidu
d i y Idp ddm, chieu d i y Idp hd'p Ihu v i dp rpng vffng ed'm quang Idp hd'p thu dffdc xdc dinh td'i tfu b i n g phtfdng phdp md hlnh hda v i md phdng sd sff dung AMPS-ID Kdt qua khdo sdt cho thd'y chidu ddy Idp ha'p thu dnh hffdng manh dd'n hidu sud't chuyen ddi cua pin mat trdi CIS v i da x i c dinh pham vi Iffa chpn chieu d i y tdi ffu 2^,^ = 2,0 - 3,0 m Ngoii ra, chung tdi p h i t hien thay dp rpng vilng ca'm quang ldp ha'p thu khoang 1,50 eV dat hieu sua't chuyen ddi quang didn cffc dai v i xdc dinh dtfdc pham vi Iffa chon tdi tfu E^
= 1,45 - 1,50 eV Ddi vdi Idp dem CdS, kd't qua khdo sdt cho thd'y chieu diy cd gid tti tdi
tfu nhd't khodng 60 nm va xdc dinh pham vi Iffa chpn d^^ = 60 - 140 nm
Nhtf vay, bdng phtfdng phdp md hinh hoa va md phdng sd cho phep Iffa chpn mdt
sd thdng s d vdt lieu td'i tfu hd ttd hidu qua cho cdng nghd chd tao nham gidi han pham
vi khdo s i t , ddng thdi lam giam dtfdc thdi gian v i chi phi thtfc nghiem
TAI LIEU THAM KHAO
[I] AMPS-ID Manual for Windows •95/NT, The Electronic Materials and Processing
Research Laboratory at the Pennsylvania State University, University Park, (2003)
[2] M Burgelman, J Verschraegen, B Minnaert, J Marlein, Proceedings of NUMOS
2007, (2007), pp.357-366
[3] M Gloeckler, Master Thesis, Colorado State University, (2007)
[4] T J Anderson, O D Crisalle S S Li, P H HoIIoway, National Renewable Energy
Laboratory, Golden, Colorado 80401-3393, (2003)
[5] U Malm, Doctoral Thesis, Uppsala University, (2008)
[6] V T Sdn, Unh kiin bdn ddn vd vi diln ti, NXB Khoa hpc va Ky thuat, (2001)
[7] A G Aberle, Thin solid films 517, (2009), pp.4706-47I0
[8J T Markvart, L Castaner, Solar celts: Materials, manufacture and operation, Elsevier,
(2005)
[9] T T Thai, V T Son, V T Bich, Proc Eleventh Vietnamese-German Seminar on
Physics and Engineering, (2008), pp.227-230
[10] T T Thai, V T Son, V T Bich, P P Hung, Proc The Fifth National Conference on
Optics and Spectroscopy, (2009), pp.425-430
[II] M Burgelman, J Verschraegen, S Degrave, P NoIIet, Prog Photovott: Res Appl
Trang 10SUMMARY STUDY OF THIN FILM SOLAR CELLS
BY MODELLING AND NUMERICAL SIMULATION TECHNIQUE
Nguyen Due Hieu, Vo Thi Thanh Tuyen, Tran Thanh Thai
In this work, we have used one dimensional simulation program called Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-ID) lo study solar cells based on CuInS^ absorber layer Various factors affecting the solar cell's performance are investigated to obtain the optimum parameters for the ZnOiIn/CdS/CuInSj solar cells Among the factors studied are the thickness and optical band gap of absorber layer and the thickness of buffer
layer of the cells It is found that the optimum absorber thickness is between 2.0 \itn and 3.0 \x m Moreover, the opdmum optical band gap of the CuInSj absorber layer is found to
be between 1.45 eV and 1.50 eV The thickness of the CdS buffer layer has been found in the range of 60 nm to 140 nm as the optimum value
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Ngiy nhSn b^i: 13/02/2012; Ngiy nhSn dSng: 10/4/2012