We recently successfully synthesized different p-type semiconductors for gas sensors, such as Co3O4 nanorods,24 NiO nanosheets,25 and CuO nano-wires.26 The advantages of p-type semicondu
Trang 1SO 2 and H 2 S Sensing Properties of Hydrothermally
Synthesized CuO Nanoplates
PHAM VAN TONG,1,2NGUYEN DUC HOA ,1,3,4HA THI NHA,1 NGUYEN VAN DUY,1CHU MANH HUNG,1and NGUYEN VAN HIEU1
1.—International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No 1, Dai Co Viet Str., Hanoi, Vietnam 2.—Department of Physics, Faculty of Mechanical Engineering, National University of Civil Engineering (NUCE), No 55, Giai Phong Str., Hanoi, Vietnam 3.—e-mail: ndhoa@itims.edu.vn 4.—e-mail:
hoa.nguyenduc@hust.edu.vn
CuO nanoplates were synthesized by a facile hydrothermal method for a SO2
gas-sensing application The synthesized materials were characterized by field-emission scanning electron microscopy (FE-SEM), powder x-ray diffrac-tion (XRD), Raman spectroscopy, and photoluminescence spectroscopy Gas-sensing characteristics were measured at various concentrations of SO2and
H2S at 200–350°C The results showed that rectangular CuO nanoplates with
an average size of approximately 700 9 500 9 30 nm3were synthesized FE-SEM and XRD analyses also depicted that the nanoplates were polycrystalline with an average crystal size of 12.85 nm Gas-sensing measurements demonstrated that the synthesized CuO nanoplates exhibited p-type semi-conducting behavior, where the sensor resistance increased upon exposure to
H2S and decreased when exposed to SO2 The sensor showed a considerably higher response to SO2 than to H2S in the measured concentrations ranging from 1 ppm to 10 ppm, suggesting that the CuO nanoplates are suitable for high-sensitivity SO2sensing We also clarified the sensing mechanism of the CuO nanoplate-based SO2 sensors
Key words: CuO nanoplates, hydrothermal, SO2sensing, sensing
mechanism
INTRODUCTION
In recent years, the rapid growth in the economy
and the industrialization of Vietnam have required
a significant increase in energy supply; however,
fossil fuels are limited, and the utilization of
household biogas is a possible solution.1 Especially
in Vietnam, the potential for biogas energy sources
is very high because many pig farms and
agricul-tural waste products are available.2Biogas is
exten-sively and readily produced and has been used in
rural Vietnam in recent years3thanks to the policy
of the government to encourage the use of biogas for
electric generation However, the biogas contains
some toxic gases, such as sulfur dioxide (SO2), hydrogen disulfide (H2S), carbon monoxide (CO), and carbon dioxide (CO2).4 Furthermore, in big cities such as Hanoi, SO2is also present in vehicle emissions as a result of fuel combustion in diesel buses and trucks.5 SO2 is a colorless gas with a strong odor and is considered an extremely toxic gas because, when combined with water, it becomes highly corrosive sulfuric acid which can damage the environment and constructions.6 The inhalation of low-concentration SO2 gas can cause chemical burns, as well as irritation of the nose, throat, and airways The occupational safety and health admin-istration (OSHA, USA) designated permissible exposure limits (PEL) for SO2 to be only 5 ppm Along with SO2, H2S is also an extremely toxic, explosive, and hazardous gas with an odor similar to that of bad eggs.7 It occurs naturally in
(Received June 27, 2018; accepted September 1, 2018)
Ó2018 The Minerals, Metals & Materials Society
Trang 2crude petroleum and natural gas, and can be
pro-duced by the breakdown of organic matter and
human/animal wastes in livestock biogas.8
Espe-cially, in rural Vietnam, people use biogas for
cooking purposes without desulfurization Biogas
contains toxic H2S gas with a concentration of up to
0.5%,9 but most plants in Vietnam use it without
any monitoring or desulfurization The PEL for H2S
set by OSHA is 20 ppm; thus, its detection in the
environment and monitoring are essential.10 Thus,
monitoring of H2S11 and SO212 at low
concentra-tions (ppm level) is very important and is the key
issue in the safe use of biogas and industrial
processes.13 Different materials and/or structures
have been used for SO2 and H2S sensors For
instance, an integrated microchip with Ru/Al2O3/
ZnO as the sensing material has been developed for
SO2 sensors with a limit detection of 5 ppm.14 An
electrochemical sensor based on diamond-like
car-bon-modified polytetrafluoroethylene membranes
has been fabricated for the detection of SO2.15
Fe-doped metal oxides have also been prepared for
conventional solid-state SO2and CO2gas sensors.16
Stabilized zirconia-based mixed potential-type
sen-sors utilizing MnNb2O6-sensing electrodes have
been prepared for the detection of low-concentration
SO2, in which the sensor has a low detection limit of
50 ppb at an operating temperature of 700°C.17
Most of the developed SO2 sensors are solid
elec-trolyte types, but such devices are limited by their
short lifetime,18 bulky size,19 and high operation
temperature.17 In contrast to the conventional
electrochemical sensor, metal oxide-based resistive
devices have some advantages, such as small size,
simple operation, easily integration in circuits, good
reproducibility, and good reversibility.20 Both
n-type and p-n-type metal oxide semiconductors have
been extensively studied for gas sensor
applica-tions.21The n-type SnO2dodecahedron was used for
the monitoring of SO2, where the maximum
response to 10 ppm SO2 at 183°C was only 1.92.22
Transition metal (Ni, Fe, and Co)-doped MoS2
nanoflowers have also been synthesized for
room-temperature SO2 gas sensors,23 where the
responses are strongly dependent on the doped
metal and reach the maximum value of
approxi-mately 20% to 4000 ppm SO2
We recently successfully synthesized different
p-type semiconductors for gas sensors, such as Co3O4
nanorods,24 NiO nanosheets,25 and CuO
nano-wires.26 The advantages of p-type
semiconduc-tors27,28 over n-types include low-humidity
dependence, high catalytic properties,29and a high
signal-to-noise ratio.30Among others, CuO, a p-type
semiconductor with a narrow band gap ( 1.2 eV)
has been the priority choice due to its robustness
and abundance.31 CuO has been used as a sensing
material in various sensors, such as VOCs,32 H2,33
H2S,34 CO,35 and NO2.36 Nanostructured CuO
materials, such as core–shell nanoparticles,37
tad-poles, spindles, leaves/spheres and fusiform,38
nanotubes and nanocubes,39 nanowires,40 nanor-ods,41nano-thin films,42polyhedrons,43urchin- and fiber-like,44and nanoplates,45have been extensively studied for gas-sensing applications utilizing the large specific surface area and effective adsorption sites for surface reactions.46Different methods have been used to synthesize CuO nanostructures in which the sputtering or physical methods require a high vacuum and expensive equipment.37,42 The inexpensive wet chemical method is very advanta-geous in the synthesis and control of the morphology
of CuO materials for gas sensor applications.38 However, the SO2-sensing characteristics of CuO nanoplates have not yet been studied In addition, sensing mechanisms of CuO-based sensors to sul-fur-containing gases, such as H2S and SO2, remain unclear
Here, CuO nanoplates were synthesized by a facile hydrothermal method and then spin-coated onto a thermally oxidized silicon substrate equipped with a pair of comb-type interdigitated Pt electrodes (Pt IDEs) for gas-sensing characterization Dynamic measurement of the change in resistance of sensors
on exposure to different concentrations of SO2and
H2S gases was performed at various temperatures ranging from 200°C to 350°C The results demon-strated that the synthesized CuO nanoplates are excellent for monitoring low concentrations of SO2
gas The SO2 gas-sensing mechanism of the CuO nanoplates has also been discussed
EXPERIMENTAL The materials used in this study were analytical copper(II) chloride (CuCl2), potassium hydroxide (KOH), and deionized (DI) water CuO nanoplates were synthesized by a facile hydrothermal method without any surfactant or post-thermal calcination Processes for the synthesis of CuO nanoplates are summarized in Scheme1 In a typical synthesis, 1.2 g of CuCl2 and 1.7 g of KOH were dissolved in
DI water under magnetic stirring at a room tem-perature of 27°C The clear blue solution was transferred to a Teflon-lined autoclave (100 mL in volume) A hydrothermal process was carried out in
an electric oven at 220°C for 4 h After the reaction was completed, the autoclave was cooled naturally
to room temperature The precipitated powders were collected and washed five times with DI water and subsequently two times with ethanol to remove unreacted ions by centrifuging at 4000 rpm for
15 min Finally, the precipitate powders were dried
at 45°C overnight before characterization The synthesized materials were characterized by pow-der x-ray diffraction (XRD; Advance D8, Bruker) and field-emission scanning electron microscopy (FE-SEM; JEOL 7600F), respectively Photolumi-nescence (PL) was measured at room temperature using an excited laser at 328 nm Raman spec-troscopy was measured using the Renishaw Invia Confocal micro-Raman System
Trang 3For gas-sensing characterization, the
as-synthe-sized materials were dispersed in N-vinylpyrrolidone
to form a colloidal solution, which was then
spin-coated onto a thermally oxidized Si substrate
equipped with Pt IDEs to form the sensing devices.47
The Pt IDEs contain 37 digits with a length of
approximately 780 lm, while the width and the
space between two digits are 20 lm (Fig.1a) For
gas-sensing measurement, the fabricated sensor was
placed on a heating plate to control the working
temperatures Prior to the gas-sensing
measure-ment, the sensor was pre-heated at 400°C for 1 h to
stabilize the resistance and increase the contact
between the sensing materials and the Pt IDEs The
resistance of the sensor was continuously measured
using a Keithley instrument (Model 2602) interfaced
with a computer, while the dried air and analytic
gases were switched on/off in each cycle Here, the
analytic H2S and SO2, with a concentration of
100 ppm diluted in nitrogen were used as tested
gases To obtain lower concentrations (1–10 ppm),
the analytic gas was further diluted with dry air
using a mixing system Details of the mixing system
can be found elsewhere.48 The response time (sres)
was estimated by fitting the sensor resistance versus
time from the introduction of the SO2 gas until the
resistance reached saturation, using Eq.1
R tð Þ ¼ R0expð t=sresÞ ð1Þ The recovery time (srec) was also estimated by fitting
the sensor resistance versus time after stopping the
introduction of SO2gas until the resistance returns
to the initial value, using Eq.2
R tð Þ ¼ RSexp t=sð recÞ ð2Þ where R0and RSare the resistances of the sensor in
air and the saturation value of the resistance in
SO , respectively
RESULTS AND DISCUSSION After hydrothermal synthesis, the obtained prod-ucts exhibited a black color, as shown in the inset of Fig.1a The morphologies and microstructure anal-ysis of the obtained products were investigated by FE-SEM (Fig.1a–c) Obviously, the low-magnifica-tion FE-SEM image (Fig.1a) demonstrates that the as-prepared products are composed of homogenous nanoplates, which were well separated but not aggregated together because none of the surfactants was used during material synthesis The nanoplates exhibited an irregular rectangular shape with a size
of approximately 700 9 500 nm2and a thickness of approximately 30 nm (Fig.1 and c) The nanosheets were composed of nanocrystals of an average size of less than 20 nm (Fig 1d) In the study of Li et al.,31 the CuO nanoplates were synthesized by a hydrothermal method using an ionic liquid precursor, benzyltrimethylammonium hydroxide, and the nanoplates have the length of approximately 262 nm, depending on the synthesis conditions Here, we did not use an ionic liquid surfactant or structure-directing agent but still obtained a nanoplate structure During hydrother-mal synthesis, the CuCl2 reacts with KOH to form Cu(OH)2 Subsequently, the Cu(OH)2dehydrates to form CuO nanocrystals at high temperature, according to the following equations:
CuCl2þ KOH ¼ Cu OHð Þ2 ð3Þ
Cu OHð Þ2DT!CuOþ H2O ð4Þ The CuO crystals thus serve as seeds for the growth
of nanoplates through the Ostwald ripening mech-anism.49Note that the dehydration of Cu(OH)2can also occur at room temperature but at a very slow rate, and the produced CuO material has a flake morphology, but the nanoplates do not During hydrothermal synthesis, the CuO nanocrystals (seeds) grew along two [100] and [010] preferential growth directions to form nanoplates according to the Ostwald-ripening mechanism.50During growth, the CuO seeds aggregated together to form the nanoplates through van der Walls forces However, the mis-orientation of the nanocrystals during aggregation forms the polycrystalline nanoplates but not the single crystal structure
The powder XRD pattern of the synthesized CuO nanoplates is shown in Fig.2a, where all the diffraction peaks were readily indexed to the mon-oclinic structure of CuO (JCPDS, No 80-1917) The diffraction peaks were broad as a result of the nanocrystalline nature of the synthesized materi-als.51 The average crystal size of the CuO nano-plates calculated using the Scherer equation was approximately 12.85 nm This value is considerably smaller than the size of the CuO nanoplates esti-mated by the SEM images, again confirming the poly-crystallinity of the nanoplates
Scheme 1 Processes for the hydrothermal synthesis of CuO
na-noplates.
Trang 4The Raman spectrum of the CuO nanosheets
shown in Fig 2b displays two peaks, at 286.5 cm 1
and 337.7 cm 1, which were assigned to the active
modes Ag and B1g, respectively.52 The Raman
spectrum of the sheet-like CuO mesocrystals has
three modes at around 281 cm 1, 345 cm 1, and
630 cm 1belonging to the Agand Bgmodes of CuO,
respectively.53Note that, in the CuO Raman modes,
the copper atoms remain stationary, and only the
oxygen atoms take part in the motion because
oxygen atoms are considerably lighter than the
copper atoms The oxygen motion for the Agmode is
parallel to, and that for the Bg mode is
perpendic-ular to, the monoclinic axis.54Here, the wavelength
numbers of those modes in the CuO nanoplates are
shifted from the values reported in the bulk
liter-ature (298 cm 1, 345 cm 1, and 632 cm 1) due to
the size effects.53,55 Here, the active mode B2g at
623 cm 1 did not appear, possibly due to the
anisotropic structure of the CuO nanoplates.56
The PL spectrum of the synthesized CuO
nano-plates shown in Fig 2c exhibits broad emission
peaks centered at approximately 498 nm (2.48 eV)
The band gap of bulk CuO ranged from 1.9 eV to
2.1 eV.57 The higher near-band-edge emission of
nanocrystalline CuO was explained due to the
Burstein–Moss effect.58 The broad emission at
498 nm (2.48 eV) is assigned to the energy levels
of defect sites, such as VCu (copper vacancies), Cui
(copper interstitial), and Vo (oxygen vacancy) in CuO nanoplates or the quantum confinement effect.59 This result is consistent with other CuO nanostructures reported to have an optical band gap
of approximately 2.48 eV.60,61 The high defect level
is expected to show a high gas-sensing performance The transient resistance versus time upon expo-sure to different concentrations of SO2measured at temperatures ranging from 200°C to 350°C is shown
in Fig.3a The base resistances of the sensor in air were 24.76 kX, 4.53 kX, 1.65 kX, and 0.80 kX for temperatures of 200°C, 250°C, 300°C, and 350°C, respectively The resistance of the CuO nanoplates decreases with increasing temperature and exhibits
an obvious negative temperature coefficient of resistance in the measured range This result is consistent with other reports on CuO thin film.62 Prior to the introduction of the analytic gas, the resistance of the sensor is very stable and hardly changed with time However, upon exposure to SO2, the sensor resistance abruptly decreased and reacted to the saturation values within a minute, depending on the working temperatures and gas concentrations The sensor also shows good recovery characteristics where the resistances returned to the initial values when the flow of analytic gas was stopped Figure3a also reveals that the response
Fig 1 (a, b) Low- and (c, d) high-magnification FE-SEM images of the synthesized CuO nanoplates-based sensor Inset in (a) is a photo of the hydrothermal product.
Trang 5and recovery speed increases with increasing
work-ing temperature At all measured temperatures, the
sensor shows reversible response characteristics
Reversible adsorption of analytic gas molecules on
the surface of the sensing material is very
impor-tant in the practical application and reusability of
gas sensors The sensor shows a remarkable
response to low SO2 concentrations down to
1 ppm, which is very effective because CuO
nanosheets did not sense 40 ppm SO2 at room
temperature.63 The sensing mechanism of SO2
based on metal oxides is complex because SO2
molecules can directly adsorb on the surface of
CuO and/or sulfidate CuO into CuS In the study
reported by Ma et al.,22 the resistance of n-type SnO2nanocrystal-based sensors decreases with the introduction of SO2gas because SO2 molecules can react with the chemisorbed oxygen species, and the trapped electrons are released back to the conduc-tion band of SnO2, according to Eq.5
SO2 gasð Þþ O ¼ SO3 ads ð Þþ e ð5Þ According to this, given that CuO is a p-type semiconductor, upon exposure to SO2, the sensor resistance should increase and not decrease as observed in our study The result is opposite to that
of n-type WO3, where the sensor resistance increased upon exposure to 10 ppm SO2 at 220°C.64 A decrease in the resistance of p-type semiconductor-based sensors upon exposure to SO2
gas was also found in MoS2materials.23We believe that SO2gas can act as both an oxidizing agent and
a reducing agent because of the multiple valences of sulfur Here, the SO2exhibits characteristics of an oxidizing gas by direct adsorption The SO2 mole-cules act asan oxidizing agent, capturing electrons
Fig 2 (a) XRD pattern, (b) Raman spectrum, and (c) PL spectrum
of CuO nanoplates: average crystal size of 12.85 nm Inset in (b)
shows an optical microscopic image of CuO nanoplate powder.
Fig 3 SO2-sensing characteristics of CuO nanoplates measured at different temperatures: (a) transient resistance versus time upon exposure to different SO2concentrations, (b) sensor response as a function of SO2concentrations.
Trang 6from the sensing material and adsorbing on the
surface in the form of SO2, as follows:
CuOþ SO2 gas ð Þþ e ¼ CuO SO2 adsð Þ ð6Þ
In addition, upon SO2 exposure, the SO2molecules
can react with CuO to form Cu2SO3, as shown
below.65
2CuOþ SO2 gasð Þþ 2e ¼ Cu2SO3þ 1=2O2 ð7Þ
The adsorption of SO2 molecules capture electrons
and generate hole carriers, thereby decreasing the
resistance of p-type CuO nanoplate-based gas
sensors
The sensor response (R0/R), as a function of SO2
concentrations measured at different temperatures,
is shown in Fig 3b At all measured temperatures,
the sensor response increased to the SO2
concen-trations The response value increased from 1.5 to
2.8 when the SO2 concentration increased from
1 ppm to 10 ppm at a measured temperature of
200°C The response value is considerably higher
than that of the n-type SnO2 dodecahedron22 or
SnO2thin film loaded with metal oxide catalysts.66
At a given concentration, the sensor response
decreases with increasing working temperatures
The sensor response can be improved by decreasing
the working temperature to below 200°C However,
decreasing the working temperature increased the
response and recovery time For practical
applica-tion, the response and recovery time should be
limited; thus, we did not check the sensor response
at temperatures lower than 200°C
Response and recovery times are important
fac-tors which determine the performance of gas
sen-sors By using the exponential decay and growth
functions, we could estimate the response and
recovery times of the sensors, which were measured
at different temperatures to various SO2
concentra-tions, as shown in Fig 4 The response time of the
sensor decreased significantly from approximately
40 s to about 5 s with the increase of working
temperature from 200°C to 350°C (Fig.4a) A higher
SO2concentration requires a shorter response time
The fast response time at high working
tempera-tures can be explained by the acceleration of
thermal energy for the gas adsorption The sensor
requires a longer recovery time of approximately
100–200 s at 200°C, depending on Sthe O2
concen-trations, indicating the strong adsorption on the
surface of the CuO However, those values
decreased exponentially to around 15 s with the
increase of working temperature from 200°C to
350°C (Fig.4b) The decrease of the response and
recovery times is consistent with the Langmuir
isotherm model, where the adsorption and
desorp-tion are exponentially dependent on the
temperature.67
H2S is a reducing gas, which is mainly present in
biogas, has high reactivity to CuO Thus, its sensing
characteristics were also measured at different
temperatures, and the data are shown in Fig.5 Figure5a shows the transient resistance versus time of the sensor measured at different tempera-tures upon exposure to various H2S concentrations
As demonstrated, the sensor resistance increased with the exposure to H2S gas, again confirming the p-type characteristics of CuO This response trend was opposite to those of other reports, where the resistance decreases (conductance increases) upon exposure to H2S by the formation of CuS percolation paths.68 However, the sensor exhibited a relatively poor recovery characteristic, whereas the sensor resistance could not recover to the initial values after the H2S gas flow was stopped H2S gas is highly reactive to CuO69; thus, it can react with CuO surfaces to form CuSO4 or CuS depending on the analytic gas concentration and working temper-atures.70 The working principle of the sensor was believed to be based on the phase transition of semiconducting p-type CuO to strongly degenerated p-type CuS with metallic conductivity,71because, in the form of CuS,65 CuxS exhibits semi-metallic or semiconducting properties72 with a band gap of approximately 1.6 eV.73 Indeed, the sensing mech-anism of H2S sensors based on CuO material relying
on the sulfidation of CuO into CuS was reported in
Fig 4 (a) Response and (b) recovery times as functions of the working temperatures measured to different SO2concentrations.
Trang 7Ref 68 However, in the study of Ramgir et al.,74
they found that, at intermediate concentrations
(500 ppb to 50 ppm), the response curve of CuO
thin film at room temperature is governed by both
H2S oxidation and CuS formation mechanisms
Here, the sensor resistance increased upon
expo-sure to H2S gas Thus, we believe that the H2S
response is mainly based on the following reaction:
2H2SðgasÞþ 3O2 adsð Þ¼ 2H2OðgasÞþ 2SO2 gas ð Þþ 3e
ð8Þ The released electrons will neutralize free holes,
and thus reduce the main carrier density,
increas-ing sensor resistance
Sensor response (R0/R), as a function of H2S
concentrations measured at different temperatures
(Fig.5b), reveals that the sensor has the highest
response value at the low operating temperature of
250°C In addition, the sensor response increased
from approximately 1.5 to 2.8 with an increase of
H2S concentration from 1 ppm to 10 ppm These
values are relatively high when the response to
1 ppm H2S of CuO thin film at room temperature is
very low at approximately 1.29.74 Decreasing the
temperature can increase the response value, but
the recovery characteristic is very poor and not
effective for practical application
The response and recovery times of the sensor when measured at different temperatures to various
H2S concentrations are shown in Fig.6 The response and recovery times of the sensors decrease with increasing working temperature, such as that
of the SO2 response The response time of approx-imately 60 s at 250°C decreased to approxapprox-imately
20 s when the temperature increased to 350°C The recovery time was longer (100–250 s) at 250°C, depending on the H2S concentration However, the recovery time decreased to approximately 24 s at 350°C for all H2S concentrations Such fast response and recovery times at a relative high temperature of approximately 350°C are effective for practical applications in the monitoring of H2S in environ-mental pollution
A comparative result on the response of the sensor to various concentrations of SO2 and H2S measured at their optimal temperatures is plotted
in Fig.7 The response values to SO2 are approxi-mately three times higher than those to the H2S gas despite its working temperature being lower In addition, hydrogen-sensing characteristics of the sensor were also tested at 200°C to different con-centrations ranging from 50 ppm to 1000 ppm (Fig-ure S1, Supplementary) The sensor showed very
Fig 5 H2S sensing characteristics of CuO nanoplates measured at
different temperatures: (a) transient resistance versus time upon
exposure to different H2S concentrations, (b) sensor response as a
function of H2S concentrations.
Fig 6 (a) Response and (b) recovery times as functions of working temperatures measured for different H2S concentrations.
Trang 8low response values of 1.15–1.36 to the H2
concen-tration of 50–1000 ppm, respectively Such results
suggest that the CuO nanoplates are effective for
monitoring SO2and/or H2S gases
CONCLUSION
We introduced a facile and saleable hydrothermal
synthesis of CuO nanoplates for effective SO2 and
H2S gas-sensing applications The CuO nanoplates
are highly crystalline and allow reversible
monitor-ing of low concentrations (1–10 ppm) of SO2 and
H2S at moderate temperatures (250–350°C) The
maximum response value to 1 ppm SO2at 200°C is
2.74 with the response time of less than 40 s,
sufficient for practical applications The SO2
-sens-ing mechanism mainly relied on the direct surface
adsorption/desorption and not on the sulfidation
process The developed sensor is suitable for
mon-itoring toxic SO2and H2S gases in biogas
ACKNOWLEDGEMENT
This study was supported by the Hanoi
Univer-sity of Science and Technology (Grant No
T2017-PC-171)
ELECTRONIC SUPPLEMENTARY
MATERIAL The online version of this article (https://doi.org/
10.1007/s11664-018-6648-0) contains
supplemen-tary material, which is available to authorized
users
REFERENCES
1 T.B Ho, T.K Roberts, and S Lucas, J Agric Sci Technol.
A 5, 387 (2015).
2 T.T.T Cu, T.X Nguyen, J.M Triolo, L Pedersen, V.D Le, P.D Le, and S.G Sommer, Asian Aust J Anim Sci 28,
280 (2014).
3 H Roubı´k, J Mazancova´, L.D Phung, and J Banout, Re-new Energy 115, 362 (2018).
4 J.-J Su and Y.-J Chen, Environ Monit Assess 187, 4109 (2015).
5 P.D Hien, M Hangartner, S Fabian, and P.M Tan, At-mos Environ 88, 66 (2014).
6 Z Pei-dong, J Guomei, and W Gang, Renew Sustain Energy Rev 11, 1903 (2007).
7 J Jiang, A Chan, S Ali, A Saha, K.J Haushalter, W.-L.M Lam, M Glasheen, J Parker, M Brenner, S.B Mahon, H.H Patel, R Ambasudhan, S.A Lipton, R.B Pilz, and G.R Boss, Sci Rep 6, 20831 (2016).
8 M Ishigami, K Hiraki, K Umemura, Y Ogasawara, K Ishii, and H Kimura, Antioxid Redox Signal 11, 205 (2009).
9 T.K.V Vu, D.Q Vu, L.S Jensen, S.G Sommer, and S Bruun, Asian Aust J Anim Sci 28, 716 (2015).
10 N Van Toan, N.V Chien, N Van Duy, D.D Vuong, N.H Lam, N.D Hoa, N Van Hieu, and N.D Chien, Appl Surf Sci 324, 280 (2015).
11 M Turker, A.B Baspinar, and A Hocalar, J Chem Technol Biotechnol 87, 682 (2012).
12 J Nisar, Z Topalian, A De Sarkar, L O ¨ sterlund, and R Ahuja, ACS Appl Mater Interfaces 5, 8516 (2013).
13 D Girardin, F Berger, A Chambaudet, and R Planade, Sens Actuators B 43, 147 (1997).
14 Y Liu, X Xu, Y Chen, Y Zhang, X Gao, P Xu, X Li, J Fang, and W Wen, Sens Actuators B 262, 26 (2018).
15 M Nebel, S Neugebauer, H Kiesele, and W Schuhmann, Electrochim Acta 55, 7923 (2010).
16 S Mulmi, R Kannan, and V Thangadurai, Solid State Ion.
262, 274 (2014).
17 F Liu, Y Wang, B Wang, X Yang, Q Wang, X Liang, P Sun, X Chuai, Y Wang, and G Lu, Sens Actuators B 238,
1024 (2017).
18 H Wang, Z Liu, D Chen, and Z Jiang, Rev Sci Instrum.
86, 75007 (2015).
19 A.W.E Hodgson, P Jacquinot, and P.C Hauser, Anal Chem 71, 2831 (1999).
20 N Baˆrsan, M Huebner, and U Weimar, Semiconductor Gas Sensors (New York: Elsevier, 2013), pp 35–63.
21 C.M Hung, D.T.T Le, and N Van Hieu, J Sci Adv Mater Devices 2, 263 (2017).
22 X Ma, Q Qin, N Zhang, C Chen, X Liu, Y Chen, C Li, and S Ruan, J Alloys Compd 723, 595 (2017).
23 D Zhang, J Wu, P Li, and Y Cao, J Mater Chem A 5,
20666 (2017).
24 H Nguyen and S.A El-Safty, J Phys Chem C 115, 8466 (2011).
25 N.D Hoa, P Van Tong, C.M Hung, N Van Duy, and N Van Hieu, Int J Hydrogen Energy 43, 9446 (2018).
26 N.D Hoa, N Van Quy, M.A Tuan, and N Van Hieu, Phys.
E Low Dimens Syst Nanostruct 42, 146 (2009).
27 I Karaduman, T C ¸ orlu, M.A Yıldırım, A Ates¸, and S Acar, J Electron Mater 46, 4017 (2017).
28 M Arif, A Sanger, and A Singh, J Electron Mater 47,
3451 (2018).
29 J Zhang, Z Qin, D Zeng, and C Xie, Phys Chem Chem Phys 19, 6313 (2017).
30 S Steinhauer, A Ko¨ck, C Gspan, W Grogger, L.K.J Vandamme, and D Pogany, Appl Phys Lett 107, 123112 (2015).
31 R Li, J Du, Y Luan, Y Xue, H Zou, G Zhuang, and Z Li, Sens Actuators B 168, 156 (2012).
32 F Wang, H Li, Z Yuan, Y Sun, F Chang, H Deng, L Xie, and H Li, RSC Adv 6, 79343 (2016).
33 N.D Hoa, N Van Quy, H Jung, D Kim, H Kim, and S.-K Hong, Sens Actuators B 146, 266 (2010).
34 A.I Ayesh, A.F.S Abu-Hani, S.T Mahmoud, and Y Haik, Sens Actuators B 231, 593 (2016).
Fig 7 Comparative result on the response of the sensor to H2S and
SO2at their optimal working temperatures.
Trang 935 J Jon´ca, A Ryzhikov, S Palussie`re, J Esvan, K
Fajerw-erg, P Menini, M.L Kahn, and P Fau, ChemPhysChem 18,
2658 (2017).
36 K.-M Kim, H.-M Jeong, H.-R Kim, K.-I Choi, H.-J Kim,
and J.-H Lee, Sensors 12, 8013 (2012).
37 T Ghodselahi, H Zahrabi, M.H Saani, and M.A Vesaghi,
J Phys Chem C 115, 22126 (2011).
38 C Yang, X Su, J Wang, X Cao, S Wang, and L Zhang,
Sens Actuators B 185, 159 (2013).
39 L Hou, C Zhang, L Li, C Du, X Li, X.-F Kang, and W.
Chen, Talanta 188, 41 (2018).
40 J Tan, M Dun, L Li, J Zhao, X Li, Y Hu, G Huang, W.
Tan, and X Huang, Sens Actuators B 252, 1 (2017).
41 S Park, Z Cai, J Lee, J.I Yoon, and S.-P Chang, Mater.
Lett 181, 231 (2016).
42 N.D Hoa, S.Y An, N.Q Dung, N Van Quy, and D Kim,
Sens Actuators B 146, 239 (2010).
43 B Yang, J Liu, H Qin, Q Liu, X Jing, H Zhang, R Li, G.
Huang, and J Wang, Ceram Int 44, 10426 (2018).
44 D.P Volanti, A.A Felix, M.O Orlandi, G Whitfield, D.-J.
Yang, E Longo, H.L Tuller, and J.A Varela, Adv Funct.
Mater 23, 1759 (2013).
45 A Umar, A.A Alshahrani, H Algarni, and R Kumar,
Sens Actuators B 250, 24 (2017).
46 D.N Oosthuizen, D.E Motaung, and H.C Swart, Sens.
Actuators B 266, 761 (2018).
47 N.D Hoa and S.A El-Safty, Nanotechnology 22, 485503
(2011).
48 N Van Hieu, L.T.B Thuy, and N.D Chien, Sens Actuators
B 129, 888 (2008).
49 T Jiang, Y Wang, D Meng, X Wu, J Wang, and J Chen,
Appl Surf Sci 311, 602 (2014).
50 A.P Moura, L.S Cavalcante, J.C Sczancoski, D.G
Strop-pa, E.C Paris, A.J Ramirez, J.A Varela, and E Longo,
Adv Powder Technol 21, 197 (2010).
51 H Siddiqui, M.S Qureshi, and F.Z Haque, Opt Int J.
Light Electron Opt 125, 4663 (2014).
52 L Debbichi, M.C Marco de Lucas, J.F Pierson, and P.
Kru¨ger, J Phys Chem C 116, 10232 (2012).
53 B.G Ganga, M.R Varma, and P.N Santhosh,
Crys-tEngComm 17, 7086 (2015).
54 K Reimann and K Syassen, Solid State Commun 76, 137
(1990).
55 J.F Xu, W Ji, Z.X Shen, W.S Li, S.H Tang, X.R Ye, D.Z.
Jia, and X.Q Xin, J Raman Spectrosc 30, 413 (1999).
56 Y Bo, B Huang, Y Zhang, J Wang, W.M Lau, and Z Zheng, Powder Technol 264, 396 (2014).
57 H Zhu, A Liu, G Liu, and F Shan, Appl Phys Lett 111,
143501 (2017).
58 K Mageshwari and R Sathyamoorthy, Mater Sci Semi-cond Process 16, 337 (2013).
59 Y Wang, T Jiang, D Meng, J Kong, H Jia, and M Yu, RSC Adv 5, 16277 (2015).
60 T Jan, J Iqbal, Q Mansoor, M Ismail, M Sajjad Haider Naqvi, A Gul, S Faizan-ul-Hassan Naqvi, and F Abbas, J Phys D 47, 355301 (2014).
61 D Wang, B Yan, C Song, T Ye, and Y Wang, J Electron Mater 47, 744 (2018).
62 A Rydosz and A Szkudlarek, Sensors 15, 20069 (2015).
63 Z Li, N Wang, Z Lin, J Wang, W Liu, K Sun, Y.Q.
Fu, and Z Wang, ACS Appl Mater Interfaces 8, 20962 (2016).
64 A Boudiba, C Zhang, C Bittencourt, P Umek, M.-G Olivier, R Snyders, and M Debliquy, Procedia Eng 47,
1033 (2012).
65 J.P Baxter, M Grunze, and C.W Kong, J Vac Sci Technol A 6, 1123 (1988).
66 P Tyagi, A Sharma, M Tomar, and V Gupta, Procedia Eng 87, 1075 (2014).
67 V.B Kamble and A.M Umarji, RSC Adv 5, 27509 (2015).
68 J Hennemann, C.-D Kohl, B.M Smarsly, T Sauerwald, J.-M Teissier, S Russ, and T Wagner, Phys Status Solidi
212, 1281 (2015).
69 D Montes, E Tocuyo, E Gonza´lez, D Rodrı´guez, R
Sola-no, R Atencio, M.A Ramos, and A Moronta, Microporous Mesoporous Mater 168, 111 (2013).
70 M Pishahang, Y Larring, E van Dijk, F van Berkel, P.I Dahl, P Cobden, M McCann, and E Bakken, Ind Eng Chem Res 55, 1024 (2016).
71 J Hennemann, T Sauerwald, C.-D Kohl, T Wagner, M Bognitzki, and A Greiner, Phys Status Solidi 209, 911 (2012).
72 M Chen, J Zhao, and X Zhao, Electrochim Acta 56, 5016 (2011).
73 M Saranya, C Santhosh, R Ramachandran, P Kollu, P Saravanan, M Vinoba, S.K Jeong, and A.N Grace, Pow-der Technol 252, 25 (2014).
74 N.S Ramgir, S.K Ganapathi, M Kaur, N Datta, K.P Muthe, D.K Aswal, S.K Gupta, and J.V Yakhmi, Sens Actuators B 151, 90 (2010).