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Tiêu đề Modeling of failure mechanisms for optimized MEMS CAD: design, fabrication and characterization of in situ test benches
Tác giả Olivier Millet, Vincent Agache, Bernard Legrand, Dominique Collard, Lionel Buchaillot
Trường học Institut d'Électronique, de Micro-électronique et de Nanotechnologie (IEMN), Université de Lille
Chuyên ngành Microelectronics and MEMS
Thể loại Conference paper
Năm xuất bản 2003
Thành phố Villeneuve-d'Ascq
Định dạng
Số trang 4
Dung lượng 516,18 KB

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Jn situ test benches have been designed and fabricated allowing to applied elementary solicitations traction, bending and torsion to representative samples.. In this study, in situ test

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MODELING OF FAILURE MECHANISMS FOR OPTIMIZED MEMS CAD:

DESIGN, FABRICATION AND CHARACTERIZATION OF IN SITU TEST BENCHES

Olivier Millet®, Vincent Agache’, Bernard Legrand’, Dominique Collard”, and Lionel Buchaillot®

Institut d'Electronique, de Micro-électronique et de Nanotechnologie IEMN*

and Center for International Research on MicroMechatronics CIRMM?

IEMN UMR CNRS 8520 Avenue Poincaré Cité scientifique 59652 Villeneuve d’ Ascq, France

Tel.: (+0033) 3 20 19 78 38, Fax: (+0033) 3 20 19 78 84, E-mail: lionel.buchaillot@isen fr

ABSTRACT This work considers the reliability of surface

microfabricated structures and particularly the dynamic

response of structural layers during operations, in order to

develop a statistical modelling of failure mechanisms for

micro-actuator Jn situ test benches have been designed and

fabricated allowing to applied elementary solicitations

(traction, bending and torsion) to representative samples

Gold, in situ doped polysilicon and polysilicon doped by

diffusion are used as structural layers These devices are

useful to study the fatigue phenomenon Characterization

and fatigue tests have been performed in a vacuum

chamber under different environmental and stimuli

conditions Moreover, a theoretical analysis using Finite

Elements Method has been achieved

INTRODUCTION The next generation of CAD programs for MEMS will

have to ensure a precise evaluation of the system lifetime,

by anticipating the failure mechanisms The principle is to

develop a statistical modeling, indicating the probability

that a failure mechanism occurs, via the determination of

statistical rules describing probability of failures generated

in each elementary structure (beam, etc.) during the

operation of the whole system [{1, 2, 3] Then, this work

aims at understanding the fatigue phenomenon for

elementary structures and to describe it statistically

according to the design, the use and the environment of the

microsystem

Our activity deals with the design and the realization of

micro-actuators This type of structure involves a lot of

motions, and therefore stress and friction The study of the

failure mechanisms can be divided into two parts, which

are the reliability of the fabrication process and the

reliability of the microsystem itself In this study, in situ

test benches have been developed allowing the analysis of

the fatigue phenomenon of structural layers (reliability of

There is more and more reliability work published on

micro-actuators From gear transmissions to pop-up

mirrors, micro-actuators are used to drive many different

types of devices [4, 5] Brown has investigated the

actuator reliability based upon crack propagation in

polysilicon (1] Sandia Lab has worked on the lifetime of

polysilicon micro-engines [2] Muhlstein and Brown have

analyzed the fatigue with a crack initiation [3] In this

paper, we will first explain the principle of our in situ test

benches Secondly, modeling of the structures will be

presented After, the fabrication process will be presented,

followed by the characterization method and the results

PRINCIPLE Each displacement generates the combination of elementary mechanical solicitations (bending, traction, torsion) Then, in order to quantify the fatigue phenomenon, it is interesting to analyze the evolution of properties (Young’s modulus, etc.) of materials, which are submitted to stress due to elementary movements, versus the number of functioning cycles With this type of device, we can characterize the material every n cycles Since electrostatic actuation is mostly used in the MEMS‘s field, each structure will be electrostatically actuated in order to apply bending, torsion and traction solicitations, under different external conditions

In order to investigate the effects of stress, different types

of structures have been designed For example, in the case

of torsion test, torsion solicitations have been applied to the middle of a beam (Fig 1) or to the ends of a beam (Fig 2) Such an approach allows the application of different stress levels for the same type of elementary

solicitation As other example, some structures are

designed with the aim at performing either torsion or bending test (Fig 1), allowing us to compare the effects of each solicitations on a same structure

Comb-drive structures (Fig 2) can be used as sensor,

allowing us to detect the movements and the frequency of movements during test From previous observations, polysilicon (structural material commonly used) and gold

applications) samples have been designed and fabricated Then, arrays of in situ fatigue test benches have been designed for each elementary solicitation (Fig 2) In the next sections, the characterization method being the same for all tests, only the torsion tests are presented as example (Fig 1, 2)

test test

>> ® 8+7

Figure 1 A torsion/bending test with solicitations applied

at the middle of the beam The structural material is in situ doped polysilicon

TRANSDUCERS ‘03

The 12th International Confarence on Solid State Sensors, Actuators and Microsystems, Boston, June 8-12, 2003

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Torsion

samples

Tested

Figure 2 Array of gold/polysilicon torsion (est benches

with electrostatic actuation The comb-drives are used as

sensors

FABRICATION PROCESS

The in situ test benches have been fabricated by surface

micromachining technology, using a six mask levels The

smallest dimension of the mask pattern is 5 um A 5-20

ohm.cm’' P type (100) silicon wafer was used as the

substrate Figure 3 depicts the process fabrication of one

polysilicon structural layer for the sake of clarity The

structures fabrication requires two structural layers

Sacrificial

layer Bushing Contact

Buried

Sid, layer Ta Diolectric layer

Dieiectric Ez==m Structural Sacrificial

[li layer sio, layer Ey layer

Figure 3 Thin film micromachining of one polysilicon

structural layer

Polysilicon process

A 0.35 um oxidation is performed followed by the first

Low Pressure Chemical Vapor Deposition (LPCVD) n-

doped polysilicon layer After electrode patterning, the

polysilicon was oxidized and covered by a LPCVD low

stress SixN, layer (Fig 3a) A 24m Low Temperature

Oxide (LTO) was deposited followed by the Reaction Ion

Etching (RIE) of bushing and contact (Fig 3b) A 2 um

LPCVD polysilicon layer was deposited This layer is

doped either during the deposition (i situ doped

polysilicon), or by diffusing dopants in the polysicon via

the use of a PhosphoSilicate Glass layer (removed in

Hydrofluoric —HF- after diffusion) The structural pattern

was defined by SFs, CF, and O, RIE (Fig 3c) Then, a

2Hm LTO was deposited followed by the etching of dimples and contacts 2 {1m polysilicon was deposited and doped (as explained previously), and the structural pattern

was delineated by SF,, CF,, Oz etching Next the structure

was annealed at 1000°c for 60 min to relax residual stress

Finally, the structure has been released using HF (see Fig

1, 2, 3d)

Gold process

A 0.35 um Plasma Enhanced Chemical Vapor Deposition (PECVD) oxide is deposited followed by the evaporation

of Titanium (0,1 um) and Gold (0,25 pm) After electrode patterning, the metallic bilayer is covered by a PECVD Si3Ng layer at 200°C (Fig 3a) A 2 um PMGI photoresist was deposited followed by the etching of bushing and contact (Fig 3b) Aluminum mask (0,1 pm) was used during etching A 0,6m gold was sputtered The structural pattem was defined by chemical etching (Fig 3c) Then, a 2 um PMGI was deposited followed by the etching of dimples and contacts 0,6):m gold was sputtered, and the structural pattern was delineated by KI (Potassium/lode) etching Finally, the structure has been released using O, RIE and EBRPG etching (Fig 2, 3d)

SIMULATIONS

CoventorWare™ has been used to analyze the systems;

via Finite Element Method (FEM), the natural frequencies

of the structures have been found in the non-damping case (Fig 4) Moreover, simulations have allowed the determination of the pull-in voltage and the level of applied stress in the pull-in configuration (Fig 4) The following data are obtained in the case of a polysilicon

structure showed in figure 2

Stressp 2 sw i7 †_, vemsge

Voltage (Vv)

Ệ as [ener

28

tụ voltage

5 Voltage (v) Pull-in voltage™~s 7

Resonancer |_——*£% Frequency (Hz)

Figure 4 FEM analysis of stress during torsion test with electrostatic actuation (in the case of polysilicon)

Determination of the pull-in voltage and of the resonant

CHARACTERIZATION

In order to determine the natural frequency of the structure, the wafer is glued on a piezoelectric ceramic

The excitation of the piezoceramic -and therefore the wafer- is controlled by a network analyzer An Optical Beam Deflection (OBD) method [6] (Fig 5) is used to determine the exact value of first natural frequency OBD

is a well-known non-destructive optical method: a laser

TRANSDUCERS ‘03

The 12th International Conference on Solid State Sensors, Actuators and Microsystems, Boston, June 8-12, 2003

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beam is focused on the sample by means of a microscope

objective The reflected beam reaches the four-quadrant

photodiode used as a vibration detector The photodiode

signal is compared to the excitation frequency leading to

the exact value of the first natural frequency of the

microstructure

Tested wafer

TT

Sd oe a he

Figure 5, Optical beam deflection method applied in the

After the previous operation, devices are actuated in a

vacuum chamber (Fig 6) The actuation voltage

corresponds to the pull-in voltage and the excitation

frequency is equal to the first natural frequency The

applied pull-in voltage and the resonant frequency are

obtained via FEM analysis Every cycles, the first

natural frequency is measured It allows to observe the

evolution of the rigidity vs the number of the functioning

cycles, and to determine the maximal number of

operations before the destruction of the structure

Moreover, the external conditions (pressure, vibrations,

etc.) have been changed in the vacuum chamber, allowing

then to study the influence of environmental parameters

system

Figure 6 Vacuum chamber Close-up views show

heater/cooler system and visualization module

EXPERIMENTAL RESULTS

In order to correctly interpret the experimental results, the

measured first natural frequency has been normalized to

the first natural frequency of the structure before any

actuations For the first experiment, the tested structures

have been actuated under vacuum; the voltage and the

excitation frequency were those determined via the FEM

analysis; the corresponding stress being known too The

results show us that there are three phases in the failure

mechanism (Fig 7), First, an adapting phase (Fig 7A), corresponding to the increase of the natural frequency occurs This adaptation is explained by the creations of microstrains due to stresses, jamming microdisplacements

by the multiplication of dislocation nodes, and then

increasing the rigidity Secondly, the apparition of

microcracks involves the decrease of the resonance frequency (Fig 7B), up to the rigidity stabilization and the final destruction of the system (Fig 7C)

108 5

% Ð% 108

6 š 14

z = 102

Ss oss

Ê Ễ oss

FB oss

Z8 94

032

oR

Number of functioning cycles (Millions)

Figure 7 Fatigue evolution for a polysilicon clamped- clamped beam with the three phases of the fatigue phenomenon

400 6a

The simulations with CoventorWare™ show us that for a same clamped-clamped beam, the stress is bigger with

torsion applied to the middle (Fig 1) of the beam than

with torsion applied to the ends (Fig 2) By actuating these two types of torsion test benches at 10 mTorr, we

can observe that the higher the induced stress, the quicker

the fatigue phenomenon occurs (Fig 8)

Conceming the influence of the pressure, two different

structures have been actuated (Fig 1), at 10 mTorr and at

the atmospheric pressure As expected, the decrease of the pressure (and then of the damping) involves the acceleration of the fatigue phenomenon (Fig 8)

The next tests deal with the external mechanical vibration, which is an important part in the reliability field A torsion test bench (Fig 2) is glued on a piezo-ceramic and is electrostatically actuated under vacuum (10 mTorr); | during this actuation, a voltage is simultaneously applied

to the piezoceramic with an excitation frequency equal to

the resonant frequency of the tested structure We observe

a weak acceleration of the fatigue phenomenon in the vibrations case (Fig 8)

The effects of thermal shocks on fatigue phenomenon

have also been studied in the case of polysilicon structures To investigate these, reshaping technology is used [7] Joule heating is applied in the air during a short

time to induce plastic deformation of the beam As a result

of the annealing effect, the plastic deformation of polysilicon occurs We assume this joule heating as a

thermal shock, and fatigue tests are performed on torsion benches (Fig 2) As a result, the fatigue evolution is as

fast as a non-annealed structure, but the maximum rigidity increase is more important Moreover, the lifetime of the annealed structure is very short (Fig 8)

TRANSDUCERS ‘03

The 12th International Conference on Solid State Sensors, Actuators and Microsystems, Boston, June 8-12, 2003

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By repeating experiments, statistical rules -describing

probability of failures generated in each elementary

structure (beam, etc.) during the functioning of the whole

system- can be determined (Fig 8)

With external Under high

16 a vibrations vacuum

With thermal shocks

Waxtmol rigdity obtained duting the fafigue phenomenon

(Nonnatized on the Young's Modatus before actuation)

Acceleration of the fatigue phenomenon compated to a

simple scinution th the alr

Figure 8 Statistical modeling of the influence of external

parameters on the fatigue phenomenon in the case

of a polysilicon clamped-clamped beam with a torsion

solicitation

Concerning the visual observations, they are performed at

each measurement via a x100 optical microscope Most of

observations concern the clamped ends, where the induced

stresses are very high Figure 7 shows us the evolution of

a clamped end of a structure (Fig 2) vs the number of

functioning cycles Microcracks can be observed This

area is well defined It corresponds to the step covering of

the first structural polysilicon layer (edge of the contact)

by the second structural polysilicon layer (tested beam)

performed and have confirmed a change of the surface

topology [9] This experiment demonstrates the brittleness

of microstructures where step covering occurs

The stiction phenomenon is a_ well-know failure

mechanism which has often been analyzed No in situ test

benches have been fabricated for this study The

phenomenon has been studied on a whole system and an

analytical modeling has been created, based on the

observations [10]

CONCLUSION This study presents behavior of polysilicon/gold

elementary microbeams, which are submitted to

elementary movements (bending, traction, torsion) Jn situ

test benches have been designed and fabricated in order to

determine material properties These devices are used to

analyze the fatigue phenomenon The measurements allow

us to confirm that the natural frequency is a good indicator

of the fatigue It appears that this phenomenon can be

divided in two different phases Finally, the influence of

induced stresses, thermal shocks, external vibrations, and

pressure has been investigated

This work allows a new approach of failure mechanisms

in a whole system (resonator, optical devices) by a better

elementary mechanical solicitations The statistical

modeling of failure mechanisms is an efficient way to

optimize the design and the fabrication Integrated in CAD program, this tool improves the mechanical quality

of next MEMS Acknowledgements

The authors would like to thank the valuable work of the IEMN technical staff, advices of P Bigotte, and SEM

micrographs of C Boyaval The authors would like to thank in the same way the ‘Delegation General de l’Armement’ for the financial support in 2002

References {1] S.B Brown Materials Reliability in MEMS devices

Technical Digest, 1997 International Conference on solid-state sensors and actuators, Transducers 97,

pp 591, 593 [2] D M Tanner “First reliability test of a surface

Proceedings SPIE Symposium on Micromachining and Microfabrication, Vol 3224, Austin, 1997, pp 14-

23

(3] C Muhlstein, S Brown Reliability and fatigue testing of MEMS Tribology issue and Opportunities

in MEMS, November 1997 Klewer Acad Public

[4] J.J Sniegowski Multi-level polysilicon surface micromachining technology: application and issues

Proceeding of the ASME Aerospace Division, Vol

52, 1996, pp 751-759

[5] http:/www.mdl,sandia.gov/Micromachine/

[6] L Buchaillot, E Farnault, M Hoummady and H

Fujita Silicon nitride thin films Young's modulus determination by an optical non destructive method,

Jpn J Appl Phys Vol 36 (1997) pp L794-L797

[8} E.H Yang and H Fujita, ‘Reshaping of single-crystal silicon microstructures’, Jpn J Appl Phys Vol 38

(1999), pp 1580-1588

[9] O Millet, B Legrand, D Collard and L Buchaiilot

Influence of the Step Covering on Fatigue

Phenomenon for Polycrystalline Silicon MEMS Jpn

J Appl Phys Vol.41 No.11B pp.L1339 - L1341 {10] V Agache, E Quevy, D Collard and L Buchaillot Stiction-controlled locking system for three- dimensional self-assembled microstructures : Theory and experimental validation Applied Physics Letters,

Vol 79, No 23, pp 3869-3871, 2001

The 12th International Conference on Solid State Sensors, Actuators and Microsystems, Boston, June 8- 42, 2003

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